CN117214531A - Novel vortex type semiconductor silicon ingot conductivity tester - Google Patents
Novel vortex type semiconductor silicon ingot conductivity tester Download PDFInfo
- Publication number
- CN117214531A CN117214531A CN202210023356.1A CN202210023356A CN117214531A CN 117214531 A CN117214531 A CN 117214531A CN 202210023356 A CN202210023356 A CN 202210023356A CN 117214531 A CN117214531 A CN 117214531A
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- coil
- base
- silicon ingot
- eddy current
- conductivity tester
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 30
- 239000010703 silicon Substances 0.000 title claims abstract description 30
- 239000000523 sample Substances 0.000 claims abstract description 17
- 238000001514 detection method Methods 0.000 claims abstract description 7
- 238000004458 analytical method Methods 0.000 claims abstract description 3
- 239000011229 interlayer Substances 0.000 claims description 6
- 238000006073 displacement reaction Methods 0.000 claims description 3
- 238000005259 measurement Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005674 electromagnetic induction Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Investigating Or Analyzing Materials By The Use Of Magnetic Means (AREA)
Abstract
The invention discloses a novel vortex type semiconductor silicon ingot conductivity tester, which comprises a base, a workbench arranged on the base, a gantry frame arranged on the base, an X-axis linear module arranged on a beam of the gantry frame, a Z-axis lifting shaft arranged on the X-axis linear module, and a single-side probe arranged on the Z-axis lifting shaft; the single-side probe comprises an active coil and a passive coil, the passive coil is closely arranged above the active coil, the active coil and the passive coil are arranged in a base, and the active coil and the passive coil are connected with a detection device and an analysis device through lines; the invention can utilize the electromagnetic coil at one side to measure the conductivity of the surface of the silicon ingot, and can meet the measurement of the conductivity of the surface of the silicon ingot with different thickness.
Description
Technical Field
The invention relates to the field of detection of performance parameters of semiconductor materials, in particular to a measuring instrument for measuring the conductivity of the surfaces of semiconductor silicon ingots with different thicknesses by utilizing eddy currents induced by an alternating electromagnetic field.
Background
In the semiconductor manufacturing process, the performance of the end product depends on the performance of the semiconductor material, in order to ensure that the actions of the measuring process do not affect the quality of the end product, a non-contact measuring method is largely adopted for measuring the performance of the semiconductor material, the non-contact measuring method is non-destructive, and new defects are not introduced, particularly in the production process, the non-contact measuring method greatly improves the yield of the product. These non-contact measurement methods can be classified into electromagnetic induction methods, electrostatic induction methods, microwave methods, and the like in principle, and the measured amounts include conductivity, mobility, carrier concentration, lifetime, and the like of semiconductor materials.
The conductivity of the semiconductor material is a basic parameter of the semiconductor material, the commonly used non-contact measurement method adopts an electromagnetic induction method to measure, when in measurement, an active electromagnetic coil and a passive electromagnetic coil are respectively placed on the upper surface and the lower surface of a sample made of the semiconductor material, alternating current with specific frequency passes through the active electromagnetic coil, at the moment, the active electromagnetic coil generates a magnetic field, vortex-shaped current is induced on the surface of the semiconductor material due to the action of the alternating magnetic field of the active coil, the current is an eddy current, the eddy current in the semiconductor material generates own magnetic field to react on the active electromagnetic coil and the passive electromagnetic coil, at the moment, the magnetic field generated by the active electromagnetic coil and the magnetic field generated by the eddy current in the semiconductor material are superposed to pass through the passive electromagnetic coil, and the conductivity of the surface of the current position of the semiconductor material can be obtained by detecting the induction current in the passive electromagnetic coil. The conductivity of the semiconductor material and the induced current in the passive electromagnetic coil are calibrated by using the standard sheet, a relation curve of the conductivity and the induced current is obtained, and the curve can be used for measuring the conductivity of the unknown semiconductor material. In the process of semiconductor manufacturing technology, the conductivity of the surface of silicon ingots with different thicknesses needs to be tested, the thickness of the silicon ingot is much thicker than that of a silicon wafer with standard specification, and the thickness and the size of the silicon ingot are greatly changed.
To meet the varying characteristics of the thickness dimension of the ingot, new test methods or structures need to be found.
Disclosure of Invention
The invention aims at solving at least one of the technical problems in the prior art, and provides a novel vortex type semiconductor silicon ingot conductivity tester, which comprises a base, a workbench arranged on the base, a gantry frame arranged on the base, an X-axis linear module arranged on a cross beam of the gantry frame, a Z-axis lifting shaft arranged on the X-axis linear module, and a single-side probe arranged on the Z-axis lifting shaft;
the single-side probe comprises a driving coil and a driven coil, the driven coil is closely arranged above the driving coil, the driving coil and the driven coil are arranged in a base, and the driving coil and the driven coil are connected with a detection device and an analysis device through circuits.
The novel eddy current type semiconductor silicon ingot conductivity tester can utilize the electromagnetic coil at one side to measure the conductivity of the surface of the silicon ingot, and can meet the measurement of the conductivity of the surface of the silicon ingot with different thickness.
In addition, the novel eddy current type semiconductor silicon ingot conductivity tester disclosed by the invention has the following additional technical characteristics:
further, the tester further comprises a Y-axis linear module, the Y-axis linear module is mounted on the X-axis linear module, the Z-axis lifting shaft is mounted on the Y-axis linear module, and the workbench is fixedly mounted on the base. The table is fixedly mounted on the base and a single-sided probe is required to have the ability to move up and down and in a horizontal plane.
Further, the workbench is a rotary workbench, and the rotary workbench is connected with the base through a lower rotary shaft. The workbench is a rotary workbench, so that the single-side probe can realize position change through rotation of the workbench and movement of an X axis and a Z axis, and the structure is simpler.
Further, the driving coil and the driven coil are both circular cylindrical structure coils, and the outer base is cylindrical structure with the same shape as the driving coil and the driven coil.
Further, a distance detecting component for detecting the distance between the bottom end of the base and the upper surface of the silicon ingot below is arranged on the base. The use of the distance detection component can automatically perform back-end feedback, and can automatically adjust the distance between the whole probe and the surface of the silicon ingot.
Optionally, the distance detecting component is a non-contact displacement sensor.
Optionally, the distance detecting component is a laser position sensor.
Further, the bottom end of the base is a closed plane, and the lower end of the driving coil is of a plane structure attached to the closed plane.
Further, the probe also comprises an inner base which is of a cylindrical structure with an interlayer, the active coil is positioned between the inner wall of the outer base and the outer wall of the inner base, and the passive coil is placed in the interlayer of the inner base.
Further, the inner base is fixedly installed with the driven coil, and the inner base is movably installed on the inner side of the driving coil. The inner base can slide up and down and determine the fixed position, so that adjustment can be performed to find the best effect point.
Additional aspects and advantages of embodiments of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The foregoing and/or additional aspects and advantages of the invention will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:
FIG. 1 is a schematic diagram of a prior art embodiment;
FIG. 2 is a schematic diagram of the overall apparatus structure of the present invention;
FIG. 3 is a schematic diagram of an induced current-conductivity curve according to the present invention;
FIG. 4 is a schematic diagram of a single-sided probe embodiment of the present invention;
FIG. 5 is a schematic view of another single-sided probe embodiment of the present invention;
FIG. 6 is a schematic diagram of a test site on a surface of a silicon ingot on a test platform according to the present invention;
wherein, 01 magnetic force lines, 02 active coil, 03 heat affected zone, 04 silicon ingot, 041 test site, 05 passive coil; i, induced current, sigma conductivity; the device comprises an A1X-axis linear module, an A2Z-axis lifting shaft, an A3 gantry frame, an A4 upright post, an A5 base, an A6 workbench, an A7 rotating shaft, an A8 display, a B single-side probe, a B2 distance detection component, a B5 outer base, a B6 inner base and a B7 lead.
Detailed Description
The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention.
According to the embodiment of the invention, the novel eddy current type semiconductor silicon ingot conductivity tester comprises an outer base with an inner cavity, an active coil and a driven coil, wherein the active coil is arranged in the inner cavity of the outer base, the bottom end of the active coil is attached to the bottom end of the base, the driven coil is arranged on the inner side of the active coil, the active coil and the driven coil are connected with an external monitoring system through wires, and the active coil, the driven coil and the outer base are insulated from each other.
According to some embodiments of the invention, the active coil and the passive coil are both circular cylindrical structure coils, and the outer base is a cylindrical structure having the same shape as the active coil and the passive coil.
According to some embodiments of the invention, the base is provided with a distance detecting component for detecting the distance between the bottom end of the base and the upper surface of the silicon ingot below. The use of the distance detection component can automatically perform back-end feedback, and can automatically adjust the distance between the whole probe and the surface of the silicon ingot.
Further, the distance detecting component is a non-contact displacement sensor.
Optionally, the distance detecting component is a laser position sensor.
According to the embodiment of the invention, the bottom end of the base is a closed plane, and the lower end of the driving coil is of a plane structure attached to the closed plane.
According to the embodiment of the invention, the upper end of the active coil is a plane, and the lower end of the passive coil is a plane structure attached to the plane.
According to some embodiments of the invention, the probe further comprises an inner base having a cylindrical structure with an interlayer, the active coil being located between the inner base wall and the outer base wall, the passive coil being placed in the interlayer of the inner base.
According to some embodiments of the invention, the inner base is fixedly mounted with the driven coil, and the inner base is movably mounted inside the driving coil. The inner base can slide up and down and determine the fixed position, so that adjustment can be performed to find the best effect point.
While a laboratory bench embodiment of the hydraulic servo system of the present invention has been shown and described, it will be appreciated by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the invention, the scope of which is defined by the claims and their equivalents.
Claims (10)
1. The novel vortex type semiconductor silicon ingot conductivity tester is characterized by comprising a base, a workbench arranged on the base, and a gantry frame arranged on the base, wherein an X-axis linear module is arranged on a cross beam of the gantry frame, a Z-axis lifting shaft is arranged on the X-axis linear module, and a single-side probe is arranged on the Z-axis lifting shaft;
the single-side probe comprises a driving coil and a driven coil, the driven coil is closely arranged above the driving coil, the driving coil and the driven coil are arranged in a base, and the driving coil and the driven coil are connected with a detection device and an analysis device through circuits.
2. The novel eddy current type semiconductor silicon ingot conductivity tester as claimed in claim 1, further comprising a Y-axis linear module, wherein the Y-axis linear module is mounted on the X-axis linear module, the Z-axis lifting shaft is mounted on the Y-axis linear module, and the workbench is fixedly mounted on the base.
3. The novel eddy current semiconductor ingot conductivity tester of claim 1, wherein the table is a rotary table coupled to the base by an underlying rotating shaft.
4. The novel eddy current type semiconductor silicon ingot conductivity tester as claimed in claim 1, wherein the active coil and the passive coil are both circular cylindrical structure coils, and the outer base is cylindrical structure having the same shape as the active coil and the passive coil.
5. The novel eddy current semiconductor silicon ingot conductivity tester as claimed in claim 1, wherein the base is provided with a distance detecting member for detecting the distance between the bottom end of the base and the upper surface of the silicon ingot below.
6. The novel eddy current semiconductor ingot conductivity tester of claim 5, wherein the distance detecting means is a non-contact displacement sensor.
7. The novel eddy current semiconductor ingot conductivity tester of claim 6, wherein the distance detecting means is a laser position sensor.
8. The novel eddy current type semiconductor silicon ingot conductivity tester according to claim 1, wherein the bottom end of the outer base is a closed plane, and the lower end of the driving coil is a plane structure attached to the closed plane.
9. The novel eddy current semiconductor silicon ingot conductivity tester of claim 1, wherein the probe further comprises an inner base having a cylindrical structure with an interlayer, the active coil is located between the inner wall of the outer base and the outer wall of the inner base, and the passive coil is placed in the interlayer of the inner base.
10. The novel eddy current semiconductor silicon ingot conductivity tester as claimed in claim 9, wherein the inner base is fixedly mounted with the driven coil, and the inner base is movably mounted inside the driving coil.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210023356.1A CN117214531A (en) | 2022-01-10 | 2022-01-10 | Novel vortex type semiconductor silicon ingot conductivity tester |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210023356.1A CN117214531A (en) | 2022-01-10 | 2022-01-10 | Novel vortex type semiconductor silicon ingot conductivity tester |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117214531A true CN117214531A (en) | 2023-12-12 |
Family
ID=89044878
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210023356.1A Pending CN117214531A (en) | 2022-01-10 | 2022-01-10 | Novel vortex type semiconductor silicon ingot conductivity tester |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117214531A (en) |
-
2022
- 2022-01-10 CN CN202210023356.1A patent/CN117214531A/en active Pending
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