CN114942378A - Nondestructive detection system and method for detecting micro-nano magnetic characteristic information in chip - Google Patents
Nondestructive detection system and method for detecting micro-nano magnetic characteristic information in chip Download PDFInfo
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Abstract
The invention discloses a nondestructive detection system and a nondestructive detection method for detecting micro-nano magnetic characteristic information in a chip, belonging to the technical field of chip nondestructive detection, wherein the system comprises: the device comprises a joint vibration shift device, a high-permeability probe, a voltage amplifier, a phase-locked amplifier and a processor. The method comprises the following steps: electrifying the chip to be tested; driving the high-permeability probe to vibrate by using the combined vibration and displacement device; collecting magnetic information inside the chip by using a high-permeability probe, and transmitting the magnetic information to a processor through a phase-locked amplifier; current imaging and comparing the chip circuit schematic diagram to evaluate defects; and visualizing the detection result. The nondestructive detection technology for detecting the micro-nano magnetic characteristic information in the chip is used for acquiring the magnetic field information generated by the weak current in the chip and inverting the current image in the chip to process, and the nondestructive detection process has the advantages of high precision and high practicability.
Description
Technical Field
The invention relates to the technical field of nondestructive detection of internal defects of chips, in particular to a nondestructive detection system and a nondestructive detection method for detecting micro-nano magnetic characteristic information in a chip.
Background
The integrated circuit (chip) industry is becoming the main battlefield of international competition with its important strategic position, the core focus of global attention, and the chip has been incorporated into our lives closely. Because the chip manufacturing process involves a plurality of steps, the process is complex, the quality requirement is high, and various uncertain random factors influence, the chip can inevitably appear defects such as short circuit, open circuit, electric leakage or component defect. In order to ensure the production quality of chips, defects must be timely and effectively detected. The internal circuit of the chip is complicated, the defect type can not be determined by naked eyes generally, and a nondestructive testing method is generally adopted to detect the defect, so that the effective nondestructive testing method has important practical significance.
At present, nondestructive testing methods for internal defects of chips at home and abroad mainly focus on the following methods:
(1)3 DX-ray tomography imaging: the X-ray can penetrate through an object to carry out projection imaging, and the method is a universal nondestructive testing method. The advantages are that: the internal structure can be reconstructed, and the resolution ratio of micron or even submicron can be achieved; the disadvantages are as follows: the resolution is inversely related to the size of the sample, and the computer is time-consuming in acquiring and processing data and low in efficiency.
(2) Scanning acoustic microscopy imaging: a nondestructive testing method for imaging device package and interface by ultrasonic wave. The advantages are that: internal cracks, cavities, etc. can be detected; the disadvantages are as follows: the resolution is low and the frequency needs to be increased continuously to increase the resolution.
(3) Phase-locked infrared imaging: the heat radiation effect of the device and the phase-locked amplification technology are utilized to effectively locate the 'hot spot'. The advantages are that: resolution is on the micron scale; the disadvantages are as follows: can not be applied to open circuit failure points and can not penetrate through materials
(4) Laser excitation technology: the use of silicon devices has different effects (resistance change, heating, luminescence, etc.) on the excitation of laser light of different wavelengths. The advantages are that: the current detection precision can reach below 1pA, and the failure positioning is accurate; the disadvantages are as follows: the failure positioning effect of the logic area in the circuit is not great, the material imaging cannot be penetrated, the equipment is expensive, more theoretical knowledge is involved, and only a few foreign chip faucet manufacturing enterprises can mature and use at present.
(5) Planar imaging techniques such as atomic force microscopy, electron beam probes, nanoprobes, and the like.
(6) The SQUID superconducting quantum interferometer is used for detecting and imaging a magnetic field, has the advantages of high sensitivity, ultrahigh magnetic resolution which can reach 10-14 and is hardly influenced by frequency, high spatial resolution, multi-layer detection and the like, but is in the way of hindering the size of a probe, is limited in spatial resolution and is mainly used for chip packaging level defect positioning, extremely low current application or quick overview scanning.
(7) By using a Giant Magneto-resistive (GMR) sensor, corresponding magnetic field data is measured through Resistance change of internal alternating ferromagnetic and non-ferromagnetic conducting layers when the magnetic field is induced, so that the spatial resolution is improved, but the sensitivity is low.
(8) The Magnetic Current Imaging (MCI) technology is a technology for carrying out nondestructive testing on an integrated circuit by using the two sensors, combines the two sensors, and has high resolution and sensitivity, but the technology has insufficient capability in repeated testing and on-line testing.
The defect nondestructive detection method for the chip defects has the following defects: 3DX ray tomography imaging and related plane imaging technology are in negative correlation with the size of a sample, and the computer is time-consuming to acquire and process data, low in efficiency and low in resolution of part of imaging technology; the phase-locked infrared imaging technology cannot be applied to open-circuit failure points and cannot penetrate through materials; the laser excitation technology has little effect on positioning failure of a logic area in the circuit, cannot penetrate through materials for imaging, and is expensive; the SQUID magnetic field detection imaging technology is limited in spatial resolution and only aims at packaging level defects; GMR sensors have low sensitivity and poor reproducibility of detection.
Disclosure of Invention
The invention provides a nondestructive testing system and a nondestructive testing method for detecting micro-nano magnetic characteristic information in a chip, aiming at overcoming the defects of low resolution, low sensitivity and poor repeatability in the existing nondestructive testing technology.
The invention relates to a nondestructive detection system for detecting micro-nano magnetic characteristic information in a chip, which is characterized in that a joint vibration and displacement device, a high-permeability probe and a voltage amplifier form a chip-level nondestructive detection micro-nano magnetic characteristic sensor.
The combined vibration and displacement device provides micro-nano displacement precision as a scanning basis; the method comprises the steps that a high-permeability probe acquires magnetic field information of a chip to be tested arranged below the high-permeability probe; the voltage amplifier provides voltage for the combined vibration and displacement device, so that the combined vibration and displacement device drives the high-permeability probe to move above the chip to be tested and generates high-frequency vibration.
Therefore, the high-permeability probe collects the magnetic field information in the chip to be tested, converts the magnetic field information into an analog voltage signal, outputs the analog voltage signal to the lock-in amplifier, and converts the analog voltage signal into a digital signal through the lock-in filter amplification of the lock-in amplifier and transmits the digital signal to the processor; further, the processor synchronously synthesizes the original magnetic field data output and converted by the coil in the high-permeability probe and the position data of the joint vibration and displacement device into a matrix; and further extracting magnetic characteristics to obtain a magnetic information characteristic matrix, inverting the magnetic information characteristic matrix by the Biot-Saval law to obtain current density information, converting the current density information into RGB data by a processor, finally obtaining a magnetic field and a current density field image, and comparing the magnetic field and the current density field image with a circuit schematic diagram of the chip to be tested to evaluate defects.
In the invention, the combined vibration and displacement device comprises an annular frame, a middle support frame, 4 displacement piezoelectric blocks and 1 vibration piezoelectric block. The 4 displacement piezoelectric blocks are of cylindrical structures, and the tail ends of the displacement piezoelectric blocks are respectively fixed at four installation positions at equal angular intervals in the circumferential direction of the inner wall of the annular frame; the middle support frame is of a cross structure, and four circumferential ends of the middle support frame are respectively fixed with the other ends of the 4 displacement piezoelectric blocks; and the centers of the end faces of the four ends of the middle supporting frame are respectively positioned on the axes of the 4 displacement piezoelectric blocks. The vibration piezoelectric block is of a cylindrical structure, an internal thread is designed in the hole in the bottom surface, the vibration piezoelectric block is matched with an external thread bulge designed in the center position of the upper surface of the middle support frame in a screwed mode, and the vibration piezoelectric block is screwed and fixed in a threaded mode, so that the axis of the vibration piezoelectric block passes through the center of the middle support frame.
Leading-out wires of the 4 displacement piezoelectric blocks and the 1 vibration piezoelectric block, which are connected with the voltage amplifier at the end faces of the two ends, pass through the voltage amplifier to supply high-frequency voltage to the vibration piezoelectric blocks, and under the action of an inverse piezoelectric effect, the vibration piezoelectric blocks vibrate along the axial direction of the vibration piezoelectric blocks at high frequency, so that the high-permeability probe is driven to vibrate; the voltage amplifier provides 10-100V voltage for the displacement piezoelectric block, and the displacement piezoelectric block at the relative position moves along the axial direction of the displacement piezoelectric block to drive the high-permeability probe to move on the horizontal plane.
The invention has the advantages that:
1. the nondestructive detection system for detecting the micro-nano magnetic characteristic information in the chip uses the piezoelectric block to move, so that the failure in the chip is accurately positioned, and the sensitivity is high.
2. The nondestructive detection system for detecting the micro-nano magnetic characteristic information in the chip has the advantages of high safety, simplicity in operation, small size, low energy consumption, strong adaptability and high detection precision.
3. The nondestructive detection system for detecting the micro-nano magnetic characteristic information in the chip adopts the high-permeability probe and the small-volume coil, and the detection device has the advantages of small volume, light weight and repeatable detection.
4. The nondestructive testing method for detecting the micro-nano magnetic characteristic information in the chip can image the whole chip interior and well determine the defect type.
Drawings
FIG. 1 is a schematic structural diagram of a nondestructive testing system for detecting micro-nano magnetic characteristic information in a chip according to the invention;
FIG. 2 is a schematic structural diagram of a joint vibration and displacement device in a nondestructive testing system for detecting micro-nano magnetic characteristic information in a chip according to the invention;
FIG. 3 is a schematic diagram of a nondestructive testing method for detecting micro-nano magnetic characteristic information in a chip according to the invention;
fig. 4 is a flowchart of a nondestructive testing system for detecting micro-nano magnetic characteristic information in a chip according to the embodiment for performing nondestructive testing.
In the figure:
1-combined vibration and displacement device 2-high magnetic conductivity probe 3-voltage amplifier
4-phase-locked amplifier 5-processor 6-chip to be tested
7-chip to be tested 101-annular frame 102-middle support frame
103-displacement piezoelectric block 104-vibration piezoelectric block
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
The invention discloses a nondestructive detection system for detecting micro-nano magnetic characteristic information in a chip, which comprises a joint vibration and displacement device 1, a high-permeability probe 2, a voltage amplifier 3, a lock-in amplifier 4, a processor 5 and a support 6, and is shown in figure 1.
The bracket 6 is provided with a top horizontal supporting surface and four circumferential support legs, and is supported on a plane through the four support legs; the combined vibration and displacement device 1 is arranged on the lower surface of the supporting surface of the bracket 6, and the combined vibration and displacement device 1 is used for driving the moving part arranged on the combined vibration and displacement device to move along the two dimensions in the horizontal direction and vibrate.
The combined vibration and displacement device 1 comprises a ring-shaped frame 101, an intermediate support frame 102, 4 displacement piezoelectric blocks 103 and 1 vibration piezoelectric block 104, as shown in fig. 2. The 4 displacement piezoelectric blocks 101 are of a cylindrical structure, and the tail ends of the displacement piezoelectric blocks are respectively fixed to four installation positions at equal angular intervals on the circumferential direction of the inner wall of the annular frame 101. The middle supporting frame 102 is a cross structure, and four circumferential ends are respectively fixed with the other ends of the 4 displacement piezoelectric blocks 101. And the centers of the end faces of the four ends of the middle supporting frame 102 are respectively positioned on the axes of the 4 displacement piezoelectric blocks 101.
The vibrating piezoelectric block 104 is also a cylinder structure, an internal thread is designed on the bottom surface of the cylinder structure, the internal thread is matched with an external thread bulge designed on the center position of the upper surface of the middle support frame 102, and the vibrating piezoelectric block is screwed and fixed in a threaded manner, so that the axis of the vibrating piezoelectric block 104 passes through the center of the middle support frame 102.
The displacement piezoelectric block 103 and the vibration piezoelectric block 104 are made of PZT-5H; the radius of the displacement piezoelectric block 103 is 10mm, and the axial length is 40 mm; when the input voltage is 100V, the axial displacement is 20 um; the radius of the vibrating piezoelectric block 104 is 12mm, and the axial length is 20 mm; the lowest requirement of the vibration frequency is 50kHz, and the vibration amplitude is 20 um.
In the combined vibration and displacement device 1 with the structure, the inner ring at the top of the annular frame 101 is designed with an internal thread structure, and the internal thread structure is matched with the annular external thread bulge designed in the middle of the lower surface of the top surface of the support 6 for screw-fastening and fixing, so that the connection between the combined vibration and displacement device 1 and the support 6 is realized.
The high-permeability probe 2 is a permalloy cylinder, and one end of the permalloy cylinder is a tip; the radius of the cylindrical part is 4mm, and the overall axial length is 60 mm. A coil is wound in the middle of the high-permeability probe, the number of turns of the coil is 10000 turns, and the diameter of a wound copper wire is 1.38 mm; the coil is 10mm away from the tip of the high magnetic permeability probe 2 and 40mm away from the other end face of the high magnetic permeability probe 2. The high permeability probe 2 is arranged coaxially with the vibrating piezoelectric block 104, with the axis perpendicular to the support surface of the support 6. An internal thread is designed on a hole at the tail end of the high-permeability probe 2 and is screwed and fixed with an external thread bulge designed at the center of the lower surface of the middle support frame 102 in a matching manner.
The leading-out wire of the voltage amplifier 3 is connected with the end face positions of two ends of each piezoelectric block (comprising 4 displacement piezoelectric blocks 101 and 1 vibration piezoelectric block 104); high-frequency voltage is conducted to the vibrating piezoelectric block 104 through the voltage amplifier 3, and under the action of the inverse piezoelectric effect, the vibrating piezoelectric block 104 generates high-frequency vibration along the axial direction of the vibrating piezoelectric block, so that the high-permeability probe 2 is driven to vibrate; the voltage amplifier 3 provides about 10-100V voltage for the displacement piezoelectric block, and the displacement piezoelectric block 103 at the relative position moves along the axial direction of the displacement piezoelectric block to drive the high-permeability probe 2 to move on the horizontal plane.
The input end of the phase-locked amplifier 4 is connected with the output end of the coil wound on the high-permeability probe 2, and the weak output of the coil in the high-permeability probe 2 is filtered and amplified. The output end of the phase-locked amplifier 4 is connected with the processor 5.
As shown in fig. 3, in the nondestructive testing system with the above structure, the joint vibration and displacement device 1, the high-permeability probe 2 and the voltage amplifier 3 together form a chip-scale nondestructive testing micro-nano magnetic characteristic sensor; the combined vibration and displacement device 1 provides micro-nano displacement precision as a scanning basis; acquiring magnetic field information of a chip 7 to be tested arranged below the probe 2 with high magnetic permeability; the voltage amplifier 3 supplies high-frequency voltage to the displacement piezoelectric block 103 and the vibration piezoelectric block 104 to provide an optimal vibration frequency, so that the joint vibration device 1 drives the high-permeability probe 2 to move above the chip 7 to be tested and generate high-frequency vibration. Due to Faraday's law of electromagnetic induction, the high permeability probe 2 conducts the magnetic field generated by the chip 7 to be measured, and the coil will have induced voltage output. Therefore, the high-permeability probe 2 collects the magnetic field information inside the chip 7 to be tested, converts the magnetic field information into an analog voltage signal, outputs the analog voltage signal to the lock-in amplifier 4, and converts the analog voltage signal into a digital signal through the lock-in amplifier 4 to be transmitted to the processor 5; the voltage output is further processed by the processor 5, the original magnetic field data output and converted by the coil in the high-permeability probe 2 and the position data of the joint vibration and displacement device 1 are synchronously synthesized into a matrix by the processor 5, the magnetic characteristics are further extracted to obtain a magnetic information characteristic matrix, current density information is obtained by the Biao-Saval law inversion, the magnetic information characteristic matrix is converted into RGB data by the processor 5, finally, a magnetic field and a current density field image are obtained, and the defect is evaluated by comparing a circuit schematic diagram of the chip 7 to be tested.
As shown in fig. 4, the nondestructive testing system includes the following testing methods:
step 1: the support 6 is arranged on a horizontal support surface, so that the support surface of the support 6 is horizontal.
Step 2: the chip 7 to be tested is placed on the horizontal supporting surface and is positioned below the probe 2 with high magnetic permeability, and usually one corner of the chip is positioned below the probe 2 with high magnetic permeability.
And step 3: the position of the chip 7 to be measured is adjusted, so that the distance between the probe tip and the surface of the chip is generally 1-2 mm, and the distance can be adjusted by arranging the chip 7 to be measured on a small lifting platform. The position of the high permeability probe 2 at this time is taken as a starting point.
And 4, step 4: turning on the voltage amplifier 3, adjusting to a suitable voltage, (150Vpp, i.e. peak voltage 150V) to vibrate the joint vibration device 1; the vibration frequency is determined by the piezoelectric block, and software simulation and experimental test are required to determine the vibration frequency.
And 5: and electrifying the chip 7 to be tested.
Step 6: the joint vibration shifting device 1 is used for driving the high-permeability probe 2 to move above the chip 7 to be tested while vibrating, the high-permeability probe 2 is used for collecting magnetic information inside the chip, and the magnetic information is transmitted to the processor 5 through the lock-in amplifier 4;
and 7: the processor 5 obtains current density information according to the obtained position-magnetic field data, further images to obtain magnetic field and current density field images, compares the circuit schematic diagram evaluation defects of the chip 7 to be detected, and visualizes the detection result.
The failure mode diagnosis is formed by analyzing the data obtained in step 7.
Claims (10)
1. A nondestructive testing method for detecting micro-nano magnetic characteristic information in a chip is characterized by comprising the following steps: a joint vibration and displacement device, a high-permeability probe and a voltage amplifier jointly form a chip-level nondestructive testing micro-nano magnetic characteristic sensor; providing micro-nano displacement precision as a scanning basis by a combined vibration and displacement device; acquiring magnetic field information of a chip to be tested arranged below the probe by using the high-permeability probe; a voltage amplifier provides voltage for the combined vibration and displacement device, so that the combined vibration and displacement device drives the high-permeability probe to move above the chip to be tested and generates high-frequency vibration; then, the high-permeability probe collects the magnetic field information in the chip to be tested, converts the magnetic field information into an analog voltage signal, outputs the analog voltage signal to a phase-locked amplifier, and converts the analog voltage signal into a digital signal through phase-locked filtering and amplification of the phase-locked amplifier and transmits the digital signal to a processor; and further, synchronously synthesizing the magnetic field original data output and converted by the coil in the high-permeability probe and the position data of the combined vibration and displacement device into a matrix by the processor, further extracting magnetic characteristics to obtain a magnetic information characteristic matrix, obtaining current density information by the Pitot-Saval law inversion, converting the current density information into RGB data by the processor, finally obtaining magnetic field and current density field imaging, and comparing a circuit schematic diagram of the chip to be tested to evaluate defects.
2. The nondestructive testing method for detecting the micro-nano magnetic characteristic information in the chip according to claim 1, characterized by comprising the following steps: the combined vibration and displacement device is fixedly arranged on the lower surface of the top of the support, and the support is supported on a plane through four circumferential support legs.
3. The nondestructive testing method for detecting the micro-nano magnetic characteristic information in the chip according to claim 1, characterized by comprising the following steps: a coil is wound in the middle of the high-permeability probe, the number of turns of the coil is 10000 turns, and the diameter of a wound copper wire is 1.38 mm; the distance between the coil and the probe tip with high magnetic permeability is 10mm, and the distance between the coil and the other end surface of the probe with high magnetic permeability is 40 mm.
4. The nondestructive testing method for detecting the micro-nano magnetic characteristic information in the chip according to claim 1, characterized by comprising the following steps: the combined vibration and displacement device comprises an annular frame, a middle support frame, 4 displacement piezoelectric blocks and 1 vibration piezoelectric block; the 4 displacement piezoelectric blocks are of cylindrical structures, and the tail ends of the displacement piezoelectric blocks are respectively fixed at four installation positions at equal angular intervals in the circumferential direction of the inner wall of the annular frame; the middle support frame is of a cross structure, and four circumferential ends of the middle support frame are respectively fixed with the other ends of the 4 displacement piezoelectric blocks; and the centers of the end faces of the four ends of the middle supporting frame are respectively positioned on the axes of the 4 displacement piezoelectric blocks; the vibration piezoelectric block is of a cylindrical structure, an internal thread is designed in the hole in the bottom surface, the vibration piezoelectric block is matched with an external thread bulge designed in the center position of the upper surface of the middle support frame in a screwed mode, and the vibration piezoelectric block is screwed and fixed in a threaded mode, so that the axis of the vibration piezoelectric block passes through the center of the middle support frame.
5. The nondestructive testing method for detecting the micro-nano magnetic characteristic information in the chip according to claim 4, characterized by comprising the following steps: the displacement piezoelectric block and the vibration piezoelectric block are made of PZT-5H; the radius of the displacement piezoelectric block is 10mm, and the axial length is 40 mm; when the input voltage is 100V, the axial displacement is 20 um.
6. The nondestructive testing method for detecting the micro-nano magnetic characteristic information in the chip according to claim 4, characterized by comprising the following steps: the radius of the vibration piezoelectric block is 12mm, and the axial length is 20 mm; the lowest requirement of the vibration frequency is 50kHz, and the vibration amplitude is 20 um.
7. The nondestructive testing method for detecting the micro-nano magnetic characteristic information in the chip according to claim 4, characterized by comprising the following steps: in the combined vibration and displacement device, an inner ring at the top of the annular frame is designed with an internal thread structure, and the internal thread structure is screwed and fixed with an annular external thread bulge designed at the middle part of the lower surface at the top of the bracket in a matching way, so that the connection between the combined vibration and displacement device and the bracket is realized.
8. The nondestructive testing method for detecting the micro-nano magnetic characteristic information in the chip according to claim 4, characterized by comprising the following steps: the high-permeability probe is a permalloy cylinder, and one end of the high-permeability probe is a tip; the radius of the cylindrical part is 4mm, and the overall axial length is 60 mm.
9. The nondestructive testing method for detecting the micro-nano magnetic characteristic information in the chip according to claim 4, characterized by comprising the following steps: leading-out wires of the 4 displacement piezoelectric blocks and the 1 vibration piezoelectric block, of which the end faces at the two ends are connected with a voltage amplifier, are used for supplying high-frequency voltage to the vibration piezoelectric blocks through the voltage amplifiers, and the vibration piezoelectric blocks vibrate along the axial direction of the vibration piezoelectric blocks under the action of the inverse piezoelectric effect, so that the high-permeability probe is driven to vibrate; the voltage amplifier provides 10-100V voltage for the displacement piezoelectric block, and the displacement piezoelectric block at the relative position moves along the axial direction of the displacement piezoelectric block to drive the high-permeability probe to move on the horizontal plane.
10. The nondestructive testing method for detecting the micro-nano magnetic characteristic information in the chip according to claim 4, characterized by comprising the following steps: the vibration piezoelectric block and the high-permeability probe are coaxially arranged, and the axis of the vibration piezoelectric block is vertical to the supporting surface of the bracket; an internal thread is designed at the tail end of the high-permeability probe, and the internal thread is screwed and fixed with an external thread bulge designed at the center of the lower surface of the middle support frame in a matching manner.
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| CN116047382A (en) * | 2023-03-23 | 2023-05-02 | 浙江工业大学 | Cold atom chip magnetic field signal detection device and detection method |
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| CN109270159A (en) * | 2018-10-31 | 2019-01-25 | 山东特检科技有限公司 | A kind of multichannel ferromagnetic material non-destructive testing sensor and method based on magnetoelectricity complex effect and Metal magnetic memory |
| CN109839582A (en) * | 2019-02-28 | 2019-06-04 | 中国计量大学 | A kind of the magnetic imaging test method and device of integrated circuit Three-dimensional Current |
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| CN116047382A (en) * | 2023-03-23 | 2023-05-02 | 浙江工业大学 | Cold atom chip magnetic field signal detection device and detection method |
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