CN117214236A - GeTe film material sample for TG-DSC test of LTCC and preparation method thereof - Google Patents
GeTe film material sample for TG-DSC test of LTCC and preparation method thereof Download PDFInfo
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- CN117214236A CN117214236A CN202311379439.5A CN202311379439A CN117214236A CN 117214236 A CN117214236 A CN 117214236A CN 202311379439 A CN202311379439 A CN 202311379439A CN 117214236 A CN117214236 A CN 117214236A
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- 239000000463 material Substances 0.000 title claims abstract description 48
- 238000012360 testing method Methods 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 229910005900 GeTe Inorganic materials 0.000 title claims abstract 15
- 239000000758 substrate Substances 0.000 claims abstract description 95
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 65
- 239000000203 mixture Substances 0.000 claims abstract description 33
- 238000004528 spin coating Methods 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000000151 deposition Methods 0.000 claims abstract description 15
- 238000004140 cleaning Methods 0.000 claims abstract description 12
- 230000008569 process Effects 0.000 claims abstract description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 77
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 238000011010 flushing procedure Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000002791 soaking Methods 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims 4
- GPMBECJIPQBCKI-UHFFFAOYSA-N germanium telluride Chemical compound [Te]=[Ge]=[Te] GPMBECJIPQBCKI-UHFFFAOYSA-N 0.000 description 54
- 238000010438 heat treatment Methods 0.000 description 7
- 239000012782 phase change material Substances 0.000 description 7
- 238000003860 storage Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000004026 adhesive bonding Methods 0.000 description 4
- 239000002390 adhesive tape Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 150000004770 chalcogenides Chemical class 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 238000007790 scraping Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- -1 chalcogenide compounds Chemical class 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000008093 supporting effect Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Sampling And Sample Adjustment (AREA)
Abstract
The invention provides a GeTe film material sample for a TG-DSC test of LTCC and a preparation method thereof. The preparation method of the GeTe film material sample comprises the following steps: (1) Cleaning and baking the substrate to obtain a pretreated substrate; (2) Spin-coating a reverse photoresist on the pretreated substrate to obtain a composition of the substrate and the photoresist; (3) Baking and exposing the composition of the substrate and photoresist; (4) developing treatment; (5) Depositing a GeTe film by magnetron sputtering to obtain a GeTe film substrate; (6) And stripping the GeTe film substrate to obtain a GeTe film material sample. The GeTe film material sample prepared by the preparation method can fall off from the substrate completely, and the problems that the effective utilization rate of the film is low and the test efficiency is low due to the fact that a part of film is attached to the substrate or components of the substrate are doped in the tested film sample in the film collecting process are avoided.
Description
Technical Field
The invention belongs to the technical field of film characterization sample preparation, and particularly relates to a GeTe film material sample for a TG-DSC test of LTCC and a preparation method thereof.
Background
Many materials can be prepared in amorphous and crystalline forms, but few materials have a unique combination of properties such as rapid crystallization of the amorphous phase, a large optical and electrical contrast between the two phases, and high stability of the amorphous phase, as well as phase change materials in chalcogenide compounds, which make them useful materials for data storage.
Phase change materials have been used by the optical memory industry for rewritable CDs and DVDs to store information as light and dark areas using changes in their reflectivity. In recent years, nonvolatile memories have also begun to use phase change materials, with corresponding changes in resistivity to effect nonvolatile information storage. For optical storage and electrical storage, it is necessary to use an external heating pulse (laser pulse for optical storage and electrical pulse for electrical storage), and depending on the magnitude of the temperature rise and the cooling rate, crystals or amorphous phases may be formed. To form an amorphous phase, a DC pulse with a relatively high amplitude and a relatively short time is used to raise the material temperature to the melting point temperature T m The above and rapid quenching causes the atoms to cool into an amorphous solid, locking in its high resistance state; to form the crystal phase, it is necessary to use a DC pulse with a slightly high amplitude and a slightly long time to make the material temperature higher than the crystallization temperature (T cry ) But remains below the melting point for a period of time such that the atoms form a somewhat periodic arrangement, ultimately forming a low resistance state.
Among phase change materials, germanium telluride (GeTe) has received increasing research attention due to its unique characteristics of high crystallinity, high reliability, high on-state resistance ratio, low on-state resistance, and the like. For the GeTe material, the difference in properties of the thin film in bulk is relatively large, and the crystallization temperature (T cry ) And melting point temperature (T) m ) Is to ensure that the device hasThe key of the effect. The exothermic and endothermic temperature change of the material is tested by a TG-DSC method, and the sample required by the test needs an intrinsic material, so that the film attached to the substrate needs to be separated from the substrate and is taken into a crucible used in the experiment, and the existing mechanical scraping method can enable a part of the film attached to the substrate or components of the substrate to be doped in the tested film sample in the process of collecting the film, so that the effective utilization rate of the film is low, the intrinsic endothermic and exothermic peaks of the film cannot be distinguished from the final tested data, and the test efficiency is low.
Disclosure of Invention
The invention aims to solve the problems that: a GeTe film material sample for a TG-DSC test of LTCC and a preparation method thereof are provided, so that the problems of low utilization rate and low test efficiency of the GeTe film material sample in the TG-DSC test are solved.
The technical scheme adopted for solving the technical problems is that the preparation method of the GeTe film material sample for the TG-DSC test of the LTCC comprises the following steps:
(1) Cleaning and baking the substrate to obtain a pretreated substrate;
(2) Spin-coating a reverse photoresist on the pretreated substrate to obtain a composition of the substrate and the photoresist;
(3) Baking and exposing the composition of the substrate and photoresist;
(4) Developing the composition of the substrate and the photoresist after the treatment in the step (3);
(5) Performing GeTe film deposition on the developed substrate and photoresist composition by magnetron sputtering to obtain a GeTe film substrate;
(6) And stripping the GeTe film substrate to obtain a GeTe film material sample.
The beneficial effects of the technical scheme adopted by the invention are as follows: the GeTe film material sample prepared by the preparation method can be completely separated from the substrate, so that the problems that the effective utilization rate of the film is low and the test efficiency is low are effectively solved because a part of the film is adhered to the substrate or the components of the substrate are doped in the tested film sample in the process of collecting the film.
Preferably, the substrate in the step (1) is made of high-resistance silicon, glass or sapphire; cleaning by adopting an RCA standard cleaning method; the baking temperature is 110-130 ℃, and the baking time is 4.5-5.5 min.
The invention adopts the preferable technical proposal as follows: the high-resistance silicon, glass or sapphire substrate has good combination with the photoresist, so that the photoresist can be uniformly attached on the substrate.
Preferably, the reverse photoresist in the step (2) is AZ5214 reverse photoresist, and the thickness of the reverse photoresist is 0.8-1.2 μm.
Preferably, the spin coating in the step (2) comprises primary spin coating and secondary spin coating; the primary spin coating rotating speed is 900-1100 rpm, and the spin coating time is 8-12 s; the rotation speed of the secondary spin coating is 2500-3500 rpm, and the spin coating time is 25-35 s.
Preferably, the baking and exposing in step (3) comprises the steps of: baking at 90-110 deg.c for 55-65 s, and first exposure of the baked substrate and photoresist composition for 3-5 s; baking at 110-130 deg.C for 80-100 s, and exposing for 35-45 s for the second time.
The invention adopts the preferable technical proposal as follows: the solvent in the photoresist can be partially volatilized through baking, the adhesiveness, light absorption and corrosion resistance of the photoresist are enhanced, the stress generated in the photoresist film in the gluing process is relaxed, and the AZ5214 reverse photoresist can be denatured from positive photoresist to negative photoresist which is easy to strip through carrying out the first exposure for 3-5 s and the second exposure for 35-45 s.
Preferably, no reticle is used in the exposure process.
The invention adopts the preferable technical proposal as follows: without using a mask, the reverse photoresist is developed by the developer, and the exposed area is not dissolved, so that the larger the area of the photoresist is, the larger the area of the film stripped after the photoresist is.
Preferably, step (4) comprises the steps of: and developing the composition of the substrate and the photoresist after the secondary exposure for 30 seconds, and then flushing with deionized water and drying with nitrogen.
The invention adopts the preferable technical proposal as follows: after development, deionized water is directly adopted for flushing, and nitrogen is used for drying, so that post-baking is not needed, and photoresist is easier to remove.
Preferably, the stripping method in the step (6) is as follows: and (5) soaking and stripping by using an acetone solution.
Preferably, the thickness of the GeTe film material sample is 0.6-1 μm.
The invention adopts the preferable technical proposal as follows: in order to ensure good test performance, the thickness of a GeTe film material sample for TG-DSC test is not less than 0.6 mu m, and the GeTe film material sample with the thickness exceeding 1 mu m is difficult to peel, so that the effective falling of the film can not be smoothly realized.
The invention also provides the GeTe film material sample prepared by the preparation method of the GeTe film material sample for the TG-DSC test of the LTCC.
The invention has the following beneficial effects:
(1) According to the invention, the photoresist is denatured from positive photoresist to negative photoresist through secondary exposure, the photoresist is easier to strip, and the prepared GeTe film material sample shows high film utilization rate and test effective rate in a TG-DSC test;
(2) The GeTe film material sample prepared by the invention can be automatically separated from the substrate without mechanical scraping and grinding, and the preparation efficiency is high;
(3) The GeTe film material prepared by the method has the advantages of good sample uniformity, controllable film thickness, higher purity after stripping and better integrity.
Drawings
FIG. 1 is a schematic flow chart of a preparation method of a GeTe film material sample for TG-DSC test of LTCC according to the embodiment of the invention;
FIG. 2 is a schematic cross-sectional view of a photoresist reversal photoresist lithography, film deposition, and film lift-off process;
FIG. 3 is a temperature-pulse schematic diagram of a chalcogenide phase transition;
FIG. 4 is a TG-DSC test chart of a GeTe thin film material sample prepared in the present invention;
FIG. 5 is a TG-DSC test chart of a mechanically peeled GeTe film sample.
Detailed Description
The features and capabilities of the present invention are described in further detail below in connection with the examples.
Example 1
A preparation method of a GeTe film material sample for a TG-DSC test of LTCC comprises the following steps:
(1) Performing RCA standard cleaning on the high-resistance silicon substrate, and baking at 120 ℃ for 5min to obtain a pretreated substrate;
(2) Placing the pretreated substrate on a gluing table, dripping AZ5214 reverse glue on the pretreated substrate, spin-coating for 10s at a rotating speed of 1000rpm, and spin-coating for 30s at a rotating speed of 3000rpm to ensure that the thickness of the photoresist on the pretreated substrate is 1 mu m, thus obtaining a composition of the substrate and the photoresist;
(3) Baking the composition of the spin-coated substrate and the photoresist on a heating table at 100 ℃ for 60 seconds, performing first exposure for 4 seconds, baking on the heating table at 120 ℃ for 90 seconds, and performing second exposure for 40 seconds;
(4) Developing the composition of the substrate and the photoresist after the secondary exposure for 30 seconds, flushing the composition with deionized water for three times, and drying the composition by using nitrogen;
(5) Performing GeTe film deposition on the developed substrate and photoresist composition by magnetron sputtering, wherein the deposition thickness is 0.8 mu m, and obtaining a GeTe film substrate;
(6) And soaking the GeTe film substrate in an acetone solution for 5 minutes, and removing the GeTe film material sample from the substrate to obtain the GeTe film substrate.
Also included in this example are samples of GeTe thin film materials for TG-DSC testing of LTCC.
Example 2
A preparation method of a GeTe film material sample for a TG-DSC test of LTCC comprises the following steps:
(1) Performing RCA standard cleaning on the glass substrate, and baking at 110 ℃ for 5.5min to obtain a pretreated substrate;
(2) Placing the pretreated substrate on a gluing table, dripping AZ5214 reverse glue on the pretreated substrate, spin-coating for 12s at 900rpm, and spin-coating for 35s at 2500rpm to ensure that the thickness of the photoresist on the pretreated substrate is 0.8 mu m, thus obtaining a composition of the substrate and the photoresist;
(3) Placing the composition of the spin-coated substrate and the photoresist on a heating table at 90 ℃ for baking for 65s, performing first exposure for 3s, placing the composition on a heating table at 110 ℃ for baking for 100s, and performing second exposure for 35 s;
(4) Developing the composition of the substrate and the photoresist after the secondary exposure for 30 seconds, flushing the composition with deionized water for three times, and drying the composition by using nitrogen;
(5) Performing GeTe film deposition on the developed substrate and photoresist composition by magnetron sputtering, wherein the deposition thickness is 0.6 mu m, and obtaining a GeTe film substrate;
(6) And soaking the GeTe film substrate in an acetone solution for 5 minutes, and removing the GeTe film material sample from the substrate to obtain the GeTe film substrate.
Also included in this example are samples of GeTe thin film materials for TG-DSC testing of LTCC.
Example 3
A preparation method of a GeTe film material sample for a TG-DSC test of LTCC comprises the following steps:
(1) Performing RCA standard cleaning on the sapphire substrate, and baking for 4.5min at 130 ℃ to obtain a pretreated substrate;
(2) Placing the pretreated substrate on a gluing table, dripping AZ5214 reverse glue on the pretreated substrate, spin-coating for 8s at a rotating speed of 1100rpm, and spin-coating for 25s at a rotating speed of 3500rpm to ensure that the thickness of the photoresist on the pretreated substrate is 1.2 mu m, thus obtaining a composition of the substrate and the photoresist;
(3) Baking the composition of the spin-coated substrate and the photoresist on a heating table at 110 ℃ for 55s, performing first exposure for 5s, baking on the heating table at 130 ℃ for 80s, and performing second exposure for 45 s;
(4) Developing the composition of the substrate and the photoresist after the secondary exposure for 30 seconds, flushing the composition with deionized water for three times, and drying the composition by using nitrogen;
(5) Performing GeTe film deposition on the developed substrate and photoresist composition by magnetron sputtering, wherein the deposition thickness is 1 mu m, and obtaining a GeTe film substrate;
(6) And soaking the GeTe film substrate in an acetone solution for 5 minutes, and removing the GeTe film material sample from the substrate to obtain the GeTe film substrate.
Also included in this example are samples of GeTe thin film materials for TG-DSC testing of LTCC.
Comparative example 1
A preparation method of a GeTe film material sample for a TG-DSC test of LTCC comprises the following steps:
(1) Performing RCA standard cleaning on the high-resistance silicon substrate, and baking at 120 ℃ for 5min to obtain a pretreated substrate;
(2) Performing GeTe film deposition on the pretreated substrate by magnetron sputtering, wherein the deposition thickness is 0.8 mu m, and obtaining the GeTe film substrate;
(3) Placing the GeTe film substrate on a transparent adhesive tape, performing adhesion and peeling, changing the adhesive tape into a thinner lamellar sheet, and then falling off the lamellar sheet on the adhesive tape into a crucible to obtain the adhesive tape.
Also included in this example are samples of GeTe thin film materials for TG-DSC testing of LTCC.
Experimental example
As can be seen from fig. 1 and fig. 2, the structures of the substrate and the photoresist reversal photoresist obtained by the micro-processing photolithography process in the first to fourth steps in fig. 1 are shown in fig. 2 (a), and since the mask is not used in the process, the photoresist reversal photoresist is not dissolved in the exposed area after being developed by the developing solution, and the area of the thin film stripped after the photoresist with larger area is also larger; fifthly, depositing a GeTe film on the basis of the graph (a) by adopting a magnetron sputtering method to obtain a structure of the substrate/photoresist/GeTe film as shown in the graph (b) of the graph (2), wherein the temperature of the film deposition process cannot be too high, so that the photoresist is invalid due to the too high temperature, and the subsequent stripping is difficult; in the sixth step, the substrate after the film deposition is placed in a container of a culture dish or a flask containing acetone solution, and the deposited film is broken into a plurality of small particle suspensions and solutions without the supporting effect of the photoresist after the film deposition is placed in the organic solvent such as solution acetone and the like due to the characteristics of the photoresist, as shown in fig. 2 (c), the detachment of the film from the substrate is realized, and a sample meeting the TG-DSC test can be obtained by collecting and drying the film by using a crucible.
FIG. 3 is a schematic diagram of temperature-pulse transition of chalcogenide phase change when a phase change material higher than T is applied to an amorphous phase change material cry And lower than T m After the temperature pulse of (2), the material is converted from an unordered amorphous structure into an ordered crystal structure, and the resistance is converted from a high-resistance state into a low-resistance state; while applying a rapid exceeding T to the crystalline phase change material m And rapidly quench to Tcry After the temperature pulse of (2), the ordered structure of the material is disturbed and the ordered arrangement is not repeated, the material is locked in the unordered structure, and the resistance is changed from the low-resistance state to the high-resistance state.
As can be seen from fig. 4 and fig. 5, the substrate is scraped by mechanical stripping to collect the GeTe film, a part of film is attached to the substrate or the components of the substrate are doped in the tested sample, and the final tested data is as shown in fig. 5, so that the intrinsic endothermic and exothermic peaks of the GeTe film cannot be distinguished; the method of the invention can well solve the two defects, and the test data are shown in FIG. 4, which shows that the exothermic peak at 195 ℃ is obviously found to be at the endothermic peak at 735 ℃ which is exactly corresponding to the T of GeTe cry And T m It can be seen from this that the present invention is directed to T for GeTe cry And T m Is more accurate and has certain advantages over conventional methods of preparing test samples.
While the invention has been described in terms of the foregoing embodiments, it will be understood that the embodiments are not intended to limit the invention in any way, but are intended to cover modifications of the invention using equivalent alternatives or modifications.
Claims (10)
1. The preparation method of the GeTe film material sample for the TG-DSC test of the LTCC is characterized by comprising the following steps:
(1) Cleaning and baking the substrate to obtain a pretreated substrate;
(2) Spin-coating a reverse photoresist on the pretreated substrate to obtain a composition of the substrate and the photoresist;
(3) Baking and exposing the composition of the substrate and photoresist;
(4) Developing the composition of the substrate and the photoresist after the treatment in the step (3);
(5) Performing GeTe film deposition on the developed substrate and photoresist composition by magnetron sputtering to obtain a GeTe film substrate;
(6) And stripping the GeTe film substrate to obtain a GeTe film material sample.
2. The method of manufacturing according to claim 1, wherein: the substrate in the step (1) is made of high-resistance silicon, glass or sapphire; the cleaning adopts an RCA standard cleaning method for cleaning; the baking temperature is 110-130 ℃, and the baking time is 4.5-5.5 min.
3. The method of manufacturing according to claim 1, wherein: the reverse photoresist in the step (2) is AZ5214 reverse photoresist, and the thickness of the reverse photoresist is 0.8-1.2 mu m.
4. A method of preparation as claimed in claim 3, wherein: the spin coating in the step (2) comprises primary spin coating and secondary spin coating; the primary spin coating rotating speed is 900-1100 rpm, and the spin coating time is 8-12 s; the rotation speed of the secondary spin coating is 2500-3500 rpm, and the spin coating time is 25-35 s.
5. The method of claim 1, wherein the baking and exposing in step (3) comprises the steps of: baking at 90-110 deg.c for 55-65 s, and first exposure of the baked substrate and photoresist composition for 3-5 s; baking at 110-130 deg.C for 80-100 s, and exposing for 35-45 s for the second time.
6. The method of manufacturing according to claim 5, wherein: and a mask is not used in the exposure process.
7. The method of claim 1, wherein the step (4) comprises the steps of: and developing the composition of the substrate and the photoresist after the secondary exposure for 30 seconds, and then flushing with deionized water and drying with nitrogen.
8. The method of claim 1, wherein the stripping in step (6) is performed by: and (5) soaking and stripping by using an acetone solution.
9. The method of manufacturing according to claim 1, wherein: the thickness of the GeTe film material sample is 0.6-1 mu m.
10. A GeTe thin film material sample for LTCC TG-DSC testing prepared by the method of any one of claims 1 to 9.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311379439.5A CN117214236A (en) | 2023-10-23 | 2023-10-23 | GeTe film material sample for TG-DSC test of LTCC and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311379439.5A CN117214236A (en) | 2023-10-23 | 2023-10-23 | GeTe film material sample for TG-DSC test of LTCC and preparation method thereof |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5705432A (en) * | 1995-12-01 | 1998-01-06 | Hughes Aircraft Company | Process for providing clean lift-off of sputtered thin film layers |
| CN102868013A (en) * | 2012-10-11 | 2013-01-09 | 南京大学 | Method for manufacturing novel terahertz ultra-wide pass band filter |
| CN103715070A (en) * | 2013-12-30 | 2014-04-09 | 国家电网公司 | Method for adhesive magnetron sputtering thick film |
| CN108398860A (en) * | 2018-03-21 | 2018-08-14 | 福建中科光芯光电科技有限公司 | A kind of stripping means of semiconductor laser chip metal |
| CN111522208A (en) * | 2020-05-06 | 2020-08-11 | 南京南大光电工程研究院有限公司 | Method for stripping metal film by using positive photoresist as mask |
| CN112736197A (en) * | 2020-12-29 | 2021-04-30 | 西北工业大学 | Method for improving phase-change material |
-
2023
- 2023-10-23 CN CN202311379439.5A patent/CN117214236A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5705432A (en) * | 1995-12-01 | 1998-01-06 | Hughes Aircraft Company | Process for providing clean lift-off of sputtered thin film layers |
| CN102868013A (en) * | 2012-10-11 | 2013-01-09 | 南京大学 | Method for manufacturing novel terahertz ultra-wide pass band filter |
| CN103715070A (en) * | 2013-12-30 | 2014-04-09 | 国家电网公司 | Method for adhesive magnetron sputtering thick film |
| CN108398860A (en) * | 2018-03-21 | 2018-08-14 | 福建中科光芯光电科技有限公司 | A kind of stripping means of semiconductor laser chip metal |
| CN111522208A (en) * | 2020-05-06 | 2020-08-11 | 南京南大光电工程研究院有限公司 | Method for stripping metal film by using positive photoresist as mask |
| CN112736197A (en) * | 2020-12-29 | 2021-04-30 | 西北工业大学 | Method for improving phase-change material |
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