CN117199205A - Epitaxial wafer, epitaxial wafer preparation method and light-emitting diode - Google Patents
Epitaxial wafer, epitaxial wafer preparation method and light-emitting diode Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 11
- 230000000903 blocking effect Effects 0.000 claims abstract description 57
- 230000004888 barrier function Effects 0.000 claims abstract description 49
- 235000012431 wafers Nutrition 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 26
- 229910002704 AlGaN Inorganic materials 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 7
- 230000007480 spreading Effects 0.000 claims description 3
- 238000003892 spreading Methods 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 52
- 229910002601 GaN Inorganic materials 0.000 description 46
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 238000000151 deposition Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 229910052691 Erbium Inorganic materials 0.000 description 10
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 10
- 229910002804 graphite Inorganic materials 0.000 description 10
- 239000010439 graphite Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- 239000011777 magnesium Substances 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 229910052761 rare earth metal Inorganic materials 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 101710095439 Erlin Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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Abstract
The invention discloses an epitaxial wafer, a preparation method of the epitaxial wafer and a light-emitting diode, wherein the epitaxial wafer comprises a shallow multiple quantum well layer, an electron blocking layer and a multiple quantum well light-emitting layer which are sequentially stacked; the electron blocking layer is an ErAl N layer, the shallow multiple quantum well layer comprises a shallow quantum well layer and a shallow quantum barrier layer which are grown periodically and alternately, the multiple quantum well light-emitting layer comprises a quantum well layer and a quantum barrier layer which are grown periodically and alternately, the shallow quantum well layer and the quantum well layer are InGaN layers, and the shallow quantum barrier layer and the quantum barrier layer are GaN layers. The invention solves the problem of low luminous efficiency of the epitaxial wafer under the drive of large current.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an epitaxial wafer, a preparation method of the epitaxial wafer and a light-emitting diode.
Background
Gallium nitride (GaN) semiconductor material has the excellent characteristics of direct wide band gap, high electron saturation drift speed, high heat conductivity and the like, and the current gallium nitride (GaN) based LED has important application value in the aspects of solid-state lighting, ultraviolet sterilization and disinfection, novel display field and the like.
The current GaN-based blue-green-violet LED generally comprises a substrate, a GaN or AlGaN buffer layer, a three-dimensional island growth layer, a two-dimensional combined growth layer, an n-type GaN current expansion layer, a multi-quantum well light emitting layer, an AlGaN electron blocking layer, a P-type GaN current expansion layer and a P-type ohmic contact layer on the substrate. With the expansion of the application field of gallium nitride (GaN) -based LEDs, the working current density requirement of chips is higher and higher. Under the ultra-high current density, electrons partially injected into the multi-quantum well light-emitting layer can obtain enough energy from the mechanisms of electric field acceleration, multi-phonon recombination, auger recombination and the like to escape out of the multi-quantum well light-emitting layer, so that the photoelectric efficiency of the gallium nitride (GaN) -based LED under the high current is seriously reduced.
On the basis, the blocking effect of the traditional AlGaN electron blocking layer on current escape under the drive of large current is not ideal any more, the electron overflow phenomenon is enhanced by simply increasing the thickness of the AlGaN electron blocking layer or the Al component of the AlGaN electron blocking layer, and the first AlGaN electron blocking layer with high Al component can increase the activation energy of Mg, so that the hole injection is difficult and the working voltage is increased. The thickness of the second AlGaN electron blocking layer increases, which hinders the transport of holes in the vertical direction. Therefore, the problem of low light-emitting efficiency of the epitaxial wafer under high-current driving is not solved yet.
Disclosure of Invention
Based on the above, the invention aims to provide an epitaxial wafer, an epitaxial wafer preparation method and a light-emitting diode, and aims to solve the problem that the light-emitting efficiency of the epitaxial wafer under the drive of high current in the prior art is low.
The embodiment of the invention is realized as follows:
on one hand, the embodiment of the invention provides an epitaxial wafer, which comprises a shallow multiple quantum well layer, an electron blocking layer and a multiple quantum well light-emitting layer which are sequentially stacked;
the electron blocking layer is an ErAl N layer, the shallow multiple quantum well layer comprises a shallow quantum well layer and a shallow quantum barrier layer which are grown periodically and alternately, the multiple quantum well light-emitting layer comprises a quantum well layer and a quantum barrier layer which are grown periodically and alternately, the shallow quantum well layer and the quantum well layer are InGaN layers, and the shallow quantum barrier layer and the quantum barrier layer are GaN layers.
Further, the Er component of the electron blocking layer is 1% -24.9%.
Further, the thickness of the electron blocking layer is 1nm to 20nm.
Further, the thicknesses of the shallow multiple quantum well layer and the multiple quantum well light-emitting layer are 12 nm-16 nm.
Furthermore, the epitaxial wafer also comprises a substrate, a buffer layer, a three-dimensional island growth layer, a two-dimensional combined growth layer, an N-type GaN current expansion layer, a stress release layer, an AlGaN electron blocking layer, a P-type current expansion layer and a P-type ohmic contact layer,
the buffer layer, the three-dimensional island-shaped growth layer, the two-dimensional combined growth layer, the N-type doped GaN current expansion layer, the shallow multiple quantum well layer, the electron blocking layer, the multiple quantum well layer, the P-type current expansion layer and the P-type ohmic contact layer are sequentially laminated on the substrate.
On the other hand, the embodiment of the invention provides a preparation method of an epitaxial wafer, which is used for preparing the epitaxial wafer, and comprises the following steps:
providing a substrate;
sequentially growing a buffer layer, a three-dimensional island-shaped growth layer, a two-dimensional combined growth layer, an N-type doped GaN current expansion layer, a shallow multiple quantum well layer, an electron blocking layer, a multiple quantum well layer, a P-type current expansion layer and a P-type ohmic contact layer on the substrate;
the electron blocking layer is an ErAl N layer, the shallow multiple quantum well layer comprises a shallow quantum well layer and a shallow quantum barrier layer which are grown periodically and alternately, the multiple quantum well light-emitting layer comprises a quantum well layer and a quantum barrier layer which are grown periodically and alternately, the shallow quantum well layer and the quantum well layer are InGaN layers, and the shallow quantum barrier layer and the quantum barrier layer are GaN layers.
Further, in the epitaxial wafer preparation method, the growth temperature of the shallow multiple quantum well layer is 850-950 ℃ and the growth pressure is 200-250 torr.
Further, in the epitaxial wafer preparation method, the growth temperature of the electron blocking layer is 850-950 ℃ and the growth pressure is 100-150 torr.
Further, in the epitaxial wafer preparation method, the growth temperature of the multi-quantum well light-emitting layer is 750-900 ℃, and the growth pressure is 200-250 torr.
In yet another aspect, an embodiment of the present invention further provides a light emitting diode, including the epitaxial wafer described above.
Compared with the prior art: the erbium element is light rare earth element, the atomic radius of rare earth element erbium (Er) is larger than that of Al (the atomic coefficient of erbium is 68, the atomic coefficient of Al is 13), and after the rare earth element erbium is doped into AlN material, er of Er component a Al 1-a The GaN shallow barrier layer in the N and shallow multiple quantum well layers and the quantum barrier layer in the multiple quantum well luminescent layer realize lattice matching on a heterojunction interface, and in-plane lattice constant matching and growth of strain-free materials can be realized, so that the dislocation density of an active area of the device is reduced, dislocation scattering and leakage channels are reduced, and Er is avoided a Al 1-a The height of the N potential barrier is reduced, the good electron blocking capability is maintained, and the photoelectric efficiency and reliability of the LED are effectively improved. Second, adding an erlin electron blocking layer between the shallow multiple quantum well layer and the multiple quantum well light emitting layer can further reduce the probability of electron overflow of gallium nitride (GaN) -based LED under high current driving to the multiple quantum well light emitting layer, thereby improving its photoelectric efficiency under high current.
Drawings
Fig. 1 is a schematic structural diagram of an epitaxial wafer according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of an epitaxial wafer according to an embodiment of the present invention;
fig. 3 is a schematic diagram of an LED energy band structure according to an embodiment of the invention.
The invention will be further described in the following detailed description in conjunction with the above-described figures.
Detailed Description
In order that the invention may be readily understood, a more complete description of the invention will be rendered by reference to the appended drawings. Several embodiments of the invention are presented in the figures. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "mounted" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
In order that the invention may be readily understood, a more particular description of the invention will be rendered by reference to specific embodiments that are illustrated in the appended drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Aiming at the problem that the current epitaxial wafer has low luminous efficiency under the drive of high current, the embodiment of the invention provides an epitaxial wafer, an epitaxial wafer preparation method and a light-emitting diode, wherein:
referring to fig. 1 to 3, an epitaxial wafer according to a first embodiment of the present invention is shown, and the epitaxial wafer includes:
the solar cell comprises a substrate 1, a buffer layer 2, a three-dimensional island growth layer 3, a two-dimensional combined growth layer 4, an n-type GaN current expansion layer 5, a stress release layer 6, a shallow multiple quantum well layer 7, an ErAlN electron blocking layer 8, a multiple quantum light emitting layer 9, an AlGaN electron blocking layer 10, a P-type current expansion layer 11 and a P-type ohmic contact layer 12, wherein the buffer layer 2, the three-dimensional island growth layer 3, the two-dimensional combined growth layer 4, the n-type GaN current expansion layer 5, the stress release layer 6, the shallow multiple quantum well layer 7, the ErAlN electron blocking layer 8, the multiple quantum light emitting layer 9, the AlGaN electron blocking layer 10, the P-type current expansion layer 11 and the P-type ohmic contact layer 12 are sequentially stacked on the substrate 1 from bottom to top. Preferably, the LED epitaxial structure is grown using a Metal Organic Chemical Vapor Deposition (MOCVD) apparatus.
The substrate 1 is a wafer made of a semiconductor single crystal material, including, but not limited to, a sapphire substrate, a silicon substrate and a silicon nitride substrate, and in a specific implementation, the substrate 1 may be subjected to an epitaxial process to form an epitaxial structure, and the epitaxy refers to a process of growing a layer of new single crystal on the substrate 10 subjected to careful processing such as cutting, grinding, polishing, and the like, where the new single crystal may be the same material as the substrate 1, or may be a different material, i.e., homoepitaxy or heteroepitaxy.
It can be appreciated that the erbium element is a light rare earth element, the atomic radius of the rare earth element erbium (Er) is larger than that of Al (the atomic coefficient of erbium is 68 and the atomic coefficient of Al is 13), and the Er of the Er component is after the rare earth element erbium is doped into the AlN material a Al 1-a The GaN shallow barrier layer in the N and shallow multiple quantum well layers and the quantum barrier layer in the multiple quantum well luminescent layer realize lattice matching on a heterojunction interface, and in-plane lattice constant matching and strain-free material growth can be realized, so that the dislocation density of aN active area of the device is reduced, dislocation scattering and a leakage channel are reduced, the decrease of EraAl1-aN barrier height is avoided, good electron blocking capability is maintained, and the photoelectric efficiency and reliability of aN LED are effectively improved. Second, adding an ErAlN electron blocking layer 8 between the shallow multiple quantum well layer 7 and the multiple quantum well light-emitting layer 9 can further reduce electron overflow of gallium nitride (GaN) -based LED under high current driveThe probability of the quantum well light-emitting layer is improved, so that the photoelectric efficiency of the quantum well light-emitting layer under high current is improved.
Specifically, er component a of EraAl1-aN electron blocking layer 8 is 1-24.9%, and the thickness of electron blocking layer 8 is 1-20 nm. The thicknesses of the shallow multiple quantum well layer 7 and the multiple quantum well light-emitting layer 9 are 12nm to 16nm.
In ErAlN electron blocking layer 8, er has a composition of a and Al has a composition of 1-a, and in some preferred embodiments of this embodiment, er has a composition of a of 0.249 and Al has a composition of b of 0.751. According to the Er a Al 1-b The composition of Er in the N electron blocking layer 8 is different, the lattice matching degree between the Er and the shallow quantum barrier layer (GaN) 71 and the quantum barrier layer (GaN) 91 is also changed, and the Er can be controlled within the value range by controlling the composition of the Er a Al 1-a The interfacial compressive tensile stress between N layer 8 and shallow quantum barrier layer (GaN) 71 and quantum barrier layer (GaN) 91 is reduced, preferably at a of 0.249, where Er is a Al 1-a No interfacial compressive tensile stress is generated between the N layer 71 and the shallow quantum barrier layer (GaN) 71 and between the N layer 71 and the quantum barrier layer (GaN) 91, so that Er is avoided a Al 1-a The N barrier height decreases, maintaining good electron blocking capability.
On the other hand, the epitaxial wafer preparation method provided by the embodiment of the invention is used for preparing the epitaxial wafer, and comprises the following steps:
providing a substrate;
sequentially growing a buffer layer, a three-dimensional island-shaped growth layer, a two-dimensional combined growth layer, an N-type doped GaN current expansion layer, a shallow multiple quantum well layer, an electron blocking layer, a multiple quantum well layer, a P-type current expansion layer and a P-type ohmic contact layer on the substrate;
the electron blocking layer is an ErAlN layer, the shallow multiple quantum well layer comprises a shallow quantum well layer and a shallow quantum barrier layer which are grown periodically and alternately, the multiple quantum well light-emitting layer comprises a quantum well layer and a quantum barrier layer which are grown periodically and alternately, the shallow quantum well layer and the quantum well layer are InGaN layers, and the shallow quantum barrier layer and the quantum barrier layer are GaN layers.
Specifically, the growth temperature of the shallow multiple quantum well layer is 850-950 ℃ and the growth pressure is 200-250 torr. The growth temperature of the electron blocking layer is 850-950 ℃ and the growth pressure is 100-150 torr. The growth temperature of the multi-quantum well luminescent layer is 750-900 ℃, and the growth pressure is 200-250 torr.
On the other hand, the light emitting diode provided by the embodiment of the invention comprises the epitaxial wafer.
In order that the invention may be readily understood, a more particular description of the invention will be rendered by reference to specific embodiments that are illustrated in the appended drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Example 1
Providing a substrate required for growth, and depositing a buffer layer on the substrate;
depositing an AlN buffer layer or a GaN buffer layer or an AlGaN buffer layer on the substrate by adopting a metal organic vapor phase chemical deposition method, controlling the growth pressure of a reaction chamber to be 50-200 torr, controlling the rotating speed of a graphite base to be 500-1000 r/min, and introducing NH with the flow of 20 slm-70 slm 3 As an N (nitrogen) source, TMGa with a flux of 20sccm to 150sccm is used as a Ga (gallium) source, and tmal (trimethylaluminum) with a flux of 20sccm to 120sccm is used as an aluminum source to deposit the AlN buffer layer or the GaN buffer layer or the AlGaN buffer layer with a thickness of 5nm to 15nm on a substrate.
Depositing a three-dimensional island growth layer on the buffer layer;
NH with the flow of 10 slm-60 slm is introduced into the buffer layer 3 And (3) introducing TMGa with the flow of 200-500 sccm as a Ga (gallium) source as an N (nitrogen) source, increasing the temperature of the reaction chamber to 1060-1090 ℃, controlling the pressure to 200-500 torr, reducing the rotating speed of the graphite base to 500-1000 r/min, so as to grow a GaN three-dimensional island-shaped growth layer, and controlling the thickness of the three-dimensional island-shaped growth layer to be 500-1000 nm.
Depositing a two-dimensional merged growth layer on the three-dimensional island growth layer;
and (3) raising the temperature of the reaction chamber to 1100-1450 ℃, controlling the pressure to 150-250 torr, controlling the rotating speed of the graphite base to 800-1200 r/min, introducing NH3 with the flow of 40-90 slm as an N (nitrogen) source, introducing TMGa with the flow of 300-1000 sccm as a Ga (gallium) source, growing a GaN two-dimensional combined growth layer, and controlling the thickness of the two-dimensional combined growth layer to be 1000-2000 nm.
Depositing an n-type GaN current expansion layer on the two-dimensional combined growth layer;
reducing the temperature of the reaction chamber to 1090-1100 ℃, controlling the pressure to 150-250 torr, controlling the rotating speed of the graphite base to 800-1200 r/min, introducing NH3 with the flow rate of 30-80 slm as N (nitrogen) source, introducing TMGa with the flow rate of 200-500 sccm as Ga (gallium) source, and introducing SiH with the flow rate of 100-300 sccm 4 As the N-type dopant, si having a doping concentration of 8E18atoms/cm 3 ～1.5E19atoms/cm 3 And growing the Si-doped N-type GaN current expansion layer, and controlling the thickness of the N-type GaN layer to be 1500-2000 nm.
The N-type GaN current expansion layer is used as a main epitaxial layer for providing electrons, siH4 is introduced to provide Si element when the N-type GaN layer is grown, si is tetravalent element, ga in the N-type GaN layer is trivalent element, and electrons are provided when Si atoms replace Ga atoms, so that the N-type GaN layer for providing electrons is formed.
Depositing a stress release layer on the n-type GaN current expansion layer;
the temperature of the reaction chamber is reduced to 850-950 ℃, the pressure is controlled at 200-250torr, the rotating speed of the graphite base is controlled at 500-1600 r/min, a low-temperature GaN stress release layer is grown, wherein the growth thickness is 1-200 nm, when the growth thickness of the low-temperature GaN stress release layer is more than 10nm, siH with the flow of 100-300 sccm is introduced 4 As the N-type dopant, si having a doping concentration of 8E18atoms/cm 3 ～1E19atoms/cm 3 When the low temperature GaN stress relief layer grows to a thickness of less than 10nm, it is undoped with silane.
Depositing N shallow multiple quantum well layers alternately grown on the stress release layer;
the temperature of the reaction chamber is reduced to 850-950 ℃, the pressure is controlled to be 200-250torr, the rotating speed of the graphite base is controlled to be 500-1600 r/min, inGaN shallow quantum well layers and GaN shallow quantum barrier layers are alternately stacked, wherein the growth temperature of the InGaN shallow quantum well layers is 850-900 ℃, the growth temperature of the GaN quantum barrier layers is 900-950 ℃, the growth thickness of the GaN quantum barrier layers is 12-16 nm, and N is more than or equal to 4 and less than or equal to 9,N and is a positive integer.
Depositing an ErAlN electron blocking layer on the shallow multiple quantum well layer;
raising the temperature of the reaction chamber to 850-950 ℃, controlling the pressure to 100-150torr, controlling the rotating speed of a graphite base to 500-1600 r/min, introducing NH3 with the flow rate of 40-90 slm as N (nitrogen) source, TMGa with the flow rate of 600-1100 sccm as Ga (gallium) source, TMAL with the flow rate of 10-300 sccm as Al (aluminum) source, and TRIPER with the flow rate of 50-500 sccm as Er (erbium) source to grow ErAlN electron blocking layer, wherein the growing thickness is 1-20 nm, and EraAl is adopted 1-a N electron blocking layer due to Er a Al 1-a The N electron blocking layer is arranged between the shallow quantum barrier layer and the quantum barrier layer, so that the barrier height of electrons in the multiple quantum well layer is improved, and the leakage of electrons is reduced. Due to the Er a Al 1-a The N-electron blocking layer and the quantum barrier layer and quantum barrier layer described before and after can achieve in-plane lattice constant matching and strain-free material growth, preferably when the Er a Al 1-a When the component of Er in the N electron blocking layer is 24.9%, erAlN has the same lattice constant as GaN, so that the dislocation density of an active area of the device is reduced, dislocation scattering and a leakage channel are reduced, and the device has more excellent performance and reliability.
Depositing M alternately grown multiple quantum well light-emitting layers on the ErAlN electron blocking layer;
the temperature of the reaction chamber is reduced to 750-900 ℃, the pressure is controlled at 200-250torr, the rotating speed of the graphite base is controlled at 800-1200 r/min, inGaN quantum well layers and GaN quantum barrier layers are alternately stacked, wherein the growth temperature of the InGaN quantum well layers is 750-810 ℃, the growth temperature of the GaN quantum barrier layers is 850-900 ℃, the growth thickness of the GaN quantum well layers is 12-16 nm, and M is more than or equal to 5 and less than or equal to 9,N and is a positive integer.
And depositing an AlGaN electron blocking layer on the multi-quantum well light-emitting layer.
Raising the temperature of the reaction chamber to 850-950 ℃, controlling the pressure to 150-250 torr, controlling the rotating speed of the graphite disc bearing the substrate to 800-1200 r/min, and introducing NH with the flow of 40-90 slm 3 As N (nitrogen) source, TMGa with flow rate of 600-1100 sccm is used as Ga (gallium) source, TMAL with flow rate of 10-300 sccm is used as Al (aluminum) source, and magnesium (CP 2 Mg) is introduced as doping agent, wherein the doping concentration of Mg is 1.5E20 atoms/cm 3 And growing an ErAlN electron blocking layer, wherein the growing thickness of the ErAlN electron blocking layer is 1-20 nm.
And depositing a P-type current expansion layer and a P-type ohmic contact layer on the AlGaN electron blocking layer.
Raising the temperature of the reaction chamber to 850-970 ℃, controlling the pressure to 150-250 torr, controlling the rotating speed of the graphite disc to 800-1200 r/min, introducing NH3 with the flow rate of 40-90 slm as N (nitrogen) source, introducing TMGa with the flow rate of 600-1100 sccm as Ga (gallium) source, and introducing magnesium (CP 2 Mg) as a dopant, wherein the doping concentration of Mg is 1E19 to 5.5e20 atoms/cm3, the P-type GaN current spreading layer is grown with a thickness of 20nm, and the P-type contact layer is controlled with a thickness of 5nm.
Comparative example 1
Comparative example 1 is a conventional gallium nitride-based light emitting diode epitaxial structure commonly seen at present, and the difference between comparative example 1 and the above-mentioned example 1 of the present invention is: no ErAlN electron blocking layer was deposited on the shallow multiple quantum well layer described in comparative example 1, but M alternately grown multiple quantum well light emitting layers were deposited.
Referring to table 1, there are shown average performance data of the corresponding group of photoelectric tests performed by applying 120mA current to chips (100 epitaxial wafers per group) of 22×35mil size prepared by 10 epitaxial wafers of the above-mentioned example 1 and comparative example 1 of the present invention in a wavelength band of 453nm, wherein the growth thickness, er component content, growth temperature and growth pressure in the electron blocking layer were mainly varied.
TABLE 1
As can be seen from the table, the performance data of the epitaxial wafer prepared in the embodiments 1 to 9 of the invention are obviously improved compared with the existing epitaxial wafer, and after rare earth erbium is doped into AlN materials, eraAl1-aN of Er components, a GaN shallow barrier layer in a shallow multiple quantum well layer and a quantum barrier layer in a multiple quantum well luminescent layer are subjected to lattice matching on a heterojunction interface, so that in-plane lattice constant matching and growth of unstrained materials can be realized, the dislocation density of aN active region of the device is reduced, dislocation scattering and a leakage channel are reduced, the decrease of EraAl1-aN barrier height is avoided, good electron blocking capability is maintained, and the photoelectric efficiency and reliability of the LED are effectively improved. In addition, the light efficiency of the epitaxial wafers in the third group is improved by 6.6% compared with comparative example 1, wherein the brightness is improved by 5.4% compared with comparative example 1, the voltage is reduced by 1.09% compared with comparative example 1, the electric leakage is reduced by 0.006uA, the electric leakage yield is improved by 5.48%, the antistatic yield is improved by 1.72%, and the improvement effect is optimal.
The foregoing examples illustrate only a few embodiments of the invention and are described in detail herein without thereby limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (10)
1. An epitaxial wafer is characterized by comprising a shallow multiple quantum well layer, an electron blocking layer and a multiple quantum well luminous layer which are sequentially stacked;
the electron blocking layer is an ErAl N layer, the shallow multiple quantum well layer comprises a shallow quantum well layer and a shallow quantum barrier layer which are grown periodically and alternately, the multiple quantum well light-emitting layer comprises a quantum well layer and a quantum barrier layer which are grown periodically and alternately, the shallow quantum well layer and the quantum well layer are InGaN layers, and the shallow quantum barrier layer and the quantum barrier layer are GaN layers.
2. The epitaxial wafer of claim 1, wherein the Er component of the electron blocking layer is 1% to 24.9%.
3. The epitaxial wafer of claim 1, wherein the electron blocking layer has a thickness of 1nm to 20nm.
4. The epitaxial wafer of claim 1, wherein the shallow multiple quantum well layer and the multiple quantum well light emitting layer each have a thickness of 12nm to 16nm.
5. The epitaxial wafer of claim 1, further comprising a substrate, a buffer layer, a three-dimensional island growth layer, a two-dimensional merged growth layer, an N-type GaN current spreading layer, a stress release layer, an AlGaN electron blocking layer, a P-type current spreading layer, a P-type ohmic contact layer,
the buffer layer, the three-dimensional island-shaped growth layer, the two-dimensional combined growth layer, the N-type doped GaN current expansion layer, the shallow multiple quantum well layer, the electron blocking layer, the multiple quantum well layer, the P-type current expansion layer and the P-type ohmic contact layer are sequentially laminated on the substrate.
6. A method for preparing an epitaxial wafer, which is used for preparing the epitaxial wafer according to any one of claims 1 to 5, the method comprising:
providing a substrate;
sequentially growing a buffer layer, a three-dimensional island-shaped growth layer, a two-dimensional combined growth layer, an N-type doped GaN current expansion layer, a shallow multiple quantum well layer, an electron blocking layer, a multiple quantum well layer, a P-type current expansion layer and a P-type ohmic contact layer on the substrate;
the electron blocking layer is an ErAlN layer, the shallow multiple quantum well layer comprises a shallow quantum well layer and a shallow quantum barrier layer which are grown periodically and alternately, the multiple quantum well light-emitting layer comprises a quantum well layer and a quantum barrier layer which are grown periodically and alternately, the shallow quantum well layer and the quantum well layer are InGaN layers, and the shallow quantum barrier layer and the quantum barrier layer are GaN layers.
7. The method of producing epitaxial wafers according to claim 6, wherein the shallow multiple quantum well layer is grown at a temperature of 850 to 950 ℃ and a pressure of 200to 250torr.
8. The method of claim 6, wherein the electron blocking layer has a growth temperature of 850-950 ℃ and a growth pressure of 100-150 torr.
9. The method of producing epitaxial wafers according to claim 6, wherein the growth temperature of the multiple quantum well light-emitting layer is 750 ℃ to 900 ℃ and the growth pressure is 200torr to 250torr.
10. A light-emitting diode comprising the epitaxial wafer according to any one of claims 1 to 5.
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