CN117198993A - Copper filling method for high aspect ratio opening pattern - Google Patents
Copper filling method for high aspect ratio opening pattern Download PDFInfo
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- CN117198993A CN117198993A CN202311196010.2A CN202311196010A CN117198993A CN 117198993 A CN117198993 A CN 117198993A CN 202311196010 A CN202311196010 A CN 202311196010A CN 117198993 A CN117198993 A CN 117198993A
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- Prior art keywords
- copper
- opening pattern
- layer
- aspect ratio
- filling
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 170
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 169
- 239000010949 copper Substances 0.000 title claims abstract description 169
- 238000000034 method Methods 0.000 title claims abstract description 53
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000005751 Copper oxide Substances 0.000 claims abstract description 22
- 229910000431 copper oxide Inorganic materials 0.000 claims abstract description 22
- 239000013078 crystal Substances 0.000 claims abstract description 22
- 238000004140 cleaning Methods 0.000 claims abstract description 21
- 230000008569 process Effects 0.000 claims abstract description 15
- 238000009713 electroplating Methods 0.000 claims abstract description 14
- 239000007788 liquid Substances 0.000 claims abstract description 13
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 120
- 239000011229 interlayer Substances 0.000 claims description 39
- 230000004888 barrier function Effects 0.000 claims description 15
- 238000009792 diffusion process Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 238000005507 spraying Methods 0.000 claims description 7
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 6
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 4
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 3
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 3
- 238000007517 polishing process Methods 0.000 claims description 3
- 238000004381 surface treatment Methods 0.000 claims 1
- 230000003647 oxidation Effects 0.000 abstract description 5
- 238000007254 oxidation reaction Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention provides a copper filling method of an opening pattern with high depth-to-width ratio, which comprises the steps of forming the opening pattern, wherein the depth-to-width ratio of the opening pattern is a preset value; forming a copper seed layer, wherein the copper seed layer covers the inner side surface of the opening and extends to the surface outside the opening, waiting time is provided between the copper seed layer formation and the copper electroplating process of the next step, and the surface of the copper seed layer is oxidized to form copper oxide in the waiting time range; treating the copper oxide by a reducing process to reduce the copper oxide on the surface of the copper seed layer to copper; treating the surface of the copper seed crystal layer by using a cleaning liquid to discharge the gas in the opening pattern; a copper layer filling the opening pattern is formed on the copper seed layer, and then the copper layer is polished to a desired thickness. The invention improves the problems of damage and bubble generation caused by oxidation of the copper seed crystal layer, improves the filling capability of an opening pattern and prevents the generation of cavities after electroplating.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a copper filling method for an opening pattern with a high depth-to-width ratio.
Background
As the size of the metal copper lines shrink, electroplated copper gap filling becomes more challenging. The copper seed crystal layer on the opening pattern of the advanced process small-size line width is thinner and is easy to oxidize to cause copper damage, thereby influencing the filling effect of electroplating and generating holes.
In order to solve the above-mentioned problems, a novel copper filling method for the high aspect ratio opening pattern is required.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a copper filling method for high aspect ratio opening patterns, which is used to solve the problem that the copper electroplating gap filling becomes more challenging as the size of the metal copper wire is reduced in the prior art. The copper seed crystal layer on the opening pattern of the advanced process small-size line width is thinner, and is easy to oxidize to cause copper damage, thereby influencing the filling effect of electroplating and generating the problem of holes.
To achieve the above and other related objects, the present invention provides a copper filling method 1 for a high aspect ratio opening pattern, comprising:
step one, forming an opening pattern, wherein the depth-to-width ratio of the opening pattern is a preset value;
forming a copper seed crystal layer, wherein the copper seed crystal layer covers the inner side surface of the opening and extends to the surface outside the opening, waiting time is reserved between the copper seed crystal layer forming process and the copper electroplating process of the next step, and the surface of the copper seed crystal layer is oxidized to form copper oxide within the waiting time range;
step three, treating the copper oxide by utilizing a reducing process to reduce the copper oxide on the surface of the copper seed crystal layer into copper;
step four, treating the surface of the copper seed crystal layer by using cleaning liquid, so that the gas in the opening pattern is discharged;
and fifthly, forming a copper layer filling the opening pattern on the copper seed crystal layer, and grinding the copper layer to the required thickness.
Preferably, the opening in the first step is a trench or a via opening.
Preferably, the opening is formed in the interlayer film in the step one.
Preferably, the copper seed layer in the second step is further extended onto the interlayer film surface outside the opening region; and fifthly, the copper layer filled in the fifth step also extends to the surface of the interlayer film outside the opening, and then the copper layer on the surface of the interlayer film outside the opening is removed by a copper chemical mechanical polishing process, and the surface of the copper layer in the opening area is polished to be level with the surface of the interlayer film.
Preferably, the interlayer film includes a plurality of layers, the front metal wiring is formed of the copper layer filled in the trench of the interlayer film, and the via hole is formed of copper filled in the via opening of the interlayer film.
Preferably, the material of the interlayer film is an oxide layer or a dielectric layer with a dielectric constant lower than that of the oxide layer.
Preferably, the bottommost interlayer film is formed on the surface of the semiconductor substrate, and the front metal wire formed in the bottommost interlayer film is connected with the doped region at the bottom through the through hole; each of the interlayer films above the lowermost layer is formed on the interlayer film of the previous layer on which the front metal wiring has been formed, respectively.
Preferably, the aspect ratio of the opening pattern in the first step is greater than 2:1.
Preferably, before the step of forming the copper seed layer in the step two, a step of forming a copper diffusion barrier layer is further included, wherein the copper diffusion barrier layer is formed on the inner side surface of the opening, and the copper seed layer is formed on the surface of the copper diffusion barrier layer.
Preferably, in the second step, a physical vapor deposition process method is adopted to form the copper diffusion barrier layer.
Preferably, the material of the copper diffusion barrier layer in the second step includes Ta or TaN.
Preferably, in the second step, the copper seed layer is formed by using a physical vapor deposition method.
Preferably, the material of the copper seed layer in the second step is pure copper.
Preferably, the material of the copper seed layer in the second step is copper alloy.
Preferably, the material of the copper alloy in the second step includes at least one of Al and Mn.
Preferably, in the third step, the copper oxide is treated with a reducing gas so that the copper oxide on the surface of the copper seed layer is reduced to copper.
Preferably, the reducing gas in step three is H2.
Preferably, the cleaning solution in the fourth step is water or a copper sulfate solution.
Preferably, the treating the surface of the copper seed layer with the cleaning solution in the fourth step includes: placing the semiconductor substrate with the opening pattern horizontally; and spraying the cleaning liquid on the surface of the semiconductor substrate in a movable scanning mode by using a water spraying device, or spraying the cleaning liquid in the middle of rotating the semiconductor substrate.
Preferably, a gap between an end time of the treating of the surface of the copper seed layer with the cleaning solution in the fourth step and a start time of the forming of the copper layer filling the opening pattern on the copper seed layer in the fifth step is less than five minutes.
Preferably, the copper layer is formed by electroplating in the fifth step.
As described above, the copper filling method of the high aspect ratio opening pattern has the following beneficial effects:
the invention improves the problems of damage and bubble generation caused by oxidation of the copper seed crystal layer, improves the filling capability of an opening pattern and prevents the generation of cavities after electroplating.
Drawings
FIG. 1 is a schematic illustration of the process flow of the present invention;
FIG. 2 is a schematic view showing the formation of a copper seed layer on an opening pattern in accordance with the present invention;
FIG. 3 is a schematic view of the formation of copper oxide in accordance with the present invention;
FIG. 4 is a schematic diagram of the reduction of copper oxide to copper using a reduction process according to the present invention;
FIG. 5 is a schematic view of the gas at the pattern of the discharge openings using the cleaning liquid according to the present invention;
FIG. 6 is a schematic view of a copper layer formed according to the present invention;
FIG. 7 is a schematic view of a polished copper layer according to the present invention.
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
Referring to fig. 1, the present invention provides a copper filling method 1 for high aspect ratio opening patterns, comprising:
step one, referring to fig. 2, forming an opening pattern, wherein the aspect ratio of the opening pattern is a preset value;
in an embodiment of the present invention, the opening in the first step is a trench or a via opening.
In an embodiment of the present invention, an opening is formed in the interlayer film in step one.
In an embodiment of the present invention, the aspect ratio of the opening pattern in the first step is greater than 2:1, i.e. the opening pattern is a high aspect ratio opening pattern.
Step two, referring to fig. 3, a copper seed layer 103 is formed, the copper seed layer 103 covers the inner side surface of the opening and extends to the surface outside the opening, waiting time is provided between the copper seed layer 103 formation and the copper electroplating process of the next step, and the surface of the copper seed layer 103 is oxidized to form copper oxide 104 within the waiting time range;
in the embodiment of the present invention, the copper seed layer 103 in the second step also extends onto the interlayer film surface outside the opening area; the copper layer 107 filled in the fifth step is further extended onto the surface of the interlayer film outside the opening, and then the copper chemical mechanical polishing process is performed to remove the copper layer 107 on the surface of the interlayer film outside the opening and polish the surface of the copper layer 107 in the opening area to be level with the surface of the interlayer film.
In the embodiment of the present invention, the interlayer film includes a plurality of layers, the front metal wiring is made of the copper layer 107 filled in the trench of the interlayer film, and the via hole is formed of copper filled in the via hole opening of the interlayer film.
In the embodiment of the invention, the material of the interlayer film is an oxide layer or a dielectric layer with a dielectric constant lower than that of the oxide layer.
In the embodiment of the present invention, the bottommost interlayer film is formed on the surface of the semiconductor substrate 101, and the front metal wiring formed in the bottommost interlayer film is connected to the doped region at the bottom through the via hole; each interlayer film on the bottommost layer is formed on the interlayer film of the previous layer on which the front metal wiring has been formed.
In an embodiment of the present invention, the step of forming the copper seed layer 103 in the second step further includes a step of forming a copper diffusion barrier layer 102, the copper diffusion barrier layer 102 is formed on an inner side surface of the opening, and the copper seed layer 103 is formed on a surface of the copper diffusion barrier layer 102.
In the embodiment of the present invention, the physical vapor deposition process is used to form the copper diffusion barrier layer 102 in the second step.
In an embodiment of the present invention, the material of the copper diffusion barrier layer 102 in the second step includes Ta or TaN.
In the embodiment of the present invention, the copper seed layer 103 is formed by physical vapor deposition in the second step.
In the embodiment of the present invention, the material of the copper seed layer 103 in the second step is pure copper.
In the embodiment of the present invention, the material of the copper seed layer 103 in the second step is a copper alloy.
In an embodiment of the present invention, the material of the copper alloy in the second step includes at least one of Al and Mn.
Step three, referring to fig. 4, the copper oxide 104 is treated by a reducing tool 105, so that the copper oxide 104 on the surface of the copper seed layer 103 is reduced to copper;
in the embodiment of the present invention, the copper oxide 104 is treated with the reducing gas in the third step, and the reducing gas may reduce the copper oxide 104 to copper at a high temperature, so that the copper oxide 104 on the surface of the copper seed layer 103 is reduced to copper.
In the embodiment of the present invention, the reducing gas in the third step is H2, and the copper oxide 104 is reduced by H2 at a high temperature, so that the copper seed layer 103 is not corroded, and the integrity of the copper seed layer 103 can be protected.
Step four, referring to fig. 5, the surface of the copper seed layer 103 is treated by using the cleaning solution 106, the cleaning solution 106 does not corrode the copper seed layer 103, so that the gas in the opening pattern is discharged, the influence of the generation of bubbles on the subsequent electroplating is avoided, and the oxidation caused by the contact of the copper seed layer 103 with air is reduced;
in an embodiment of the present invention, the cleaning solution 106 in the fourth step is water or a copper sulfate solution.
In an embodiment of the present invention, treating the surface of the copper seed layer 103 with the cleaning solution 106 in the fourth step includes: placing the semiconductor substrate 101 formed with the opening pattern horizontally; the cleaning liquid 106 is sprayed to the surface of the semiconductor substrate 101 in a moving scanning manner by a water spraying device, or the cleaning liquid 106 is sprayed in the middle of rotating the semiconductor substrate 101.
In the embodiment of the present invention, the interval between the end time of treating the surface of the copper seed layer 103 with the cleaning liquid 106 in the fourth step and the start time of forming the copper layer 107 filling the opening pattern on the copper seed layer 103 in the fifth step is less than five minutes, i.e., the degree of oxidation of the copper seed layer 103 is improved, thereby reducing the influence on the subsequent plating.
Step five, forming a copper layer 107 filling the opening pattern on the copper seed layer 103 to form a structure as shown in fig. 6, and then polishing the copper layer 107 to a desired thickness to form a structure as shown in fig. 7, wherein the polishing method is usually chemical mechanical planarization polishing.
In the embodiment of the present invention, the copper layer 107 is formed by electroplating in the fifth step.
It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
In summary, the invention improves the problems of damage and bubble generation caused by oxidation of the copper seed layer, improves the filling capability of the opening pattern, and prevents the occurrence of voids after electroplating. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (21)
1. A copper filling method of high aspect ratio opening pattern is characterized in that the method at least comprises the following steps:
step one, forming an opening pattern, wherein the depth-to-width ratio of the opening pattern is a preset value;
forming a copper seed crystal layer, wherein the copper seed crystal layer covers the inner side surface of the opening and extends to the surface outside the opening, waiting time is reserved between the copper seed crystal layer forming process and the copper electroplating process of the next step, and the surface of the copper seed crystal layer is oxidized to form copper oxide within the waiting time range;
step three, treating the copper oxide by utilizing a reducing process to reduce the copper oxide on the surface of the copper seed crystal layer into copper;
step four, treating the surface of the copper seed crystal layer by using cleaning liquid, so that the gas in the opening pattern is discharged;
and fifthly, forming a copper layer filling the opening pattern on the copper seed crystal layer, and grinding the copper layer to the required thickness.
2. The method for copper filling of high aspect ratio opening pattern according to claim 1, wherein: the opening in the first step is a groove or a through hole opening.
3. The method for copper filling of high aspect ratio opening pattern according to claim 2, wherein: in the first step, the opening is formed in the interlayer film.
4. The method for copper filling of high aspect ratio opening pattern according to claim 3, wherein: the copper seed layer in the second step also extends onto the surface of the interlayer film outside the opening area; and fifthly, the copper layer filled in the fifth step also extends to the surface of the interlayer film outside the opening, and then the copper layer on the surface of the interlayer film outside the opening is removed by a copper chemical mechanical polishing process, and the surface of the copper layer in the opening area is polished to be level with the surface of the interlayer film.
5. The method for copper filling of high aspect ratio opening pattern according to claim 4, wherein: the interlayer film includes a plurality of layers, the copper layer filled in the trench of the interlayer film is used as a front metal connection line, and a via hole is formed of copper filled in the via hole opening of the interlayer film.
6. The method for copper filling of high aspect ratio opening pattern according to claim 5, wherein: the interlayer film is made of an oxide layer or a dielectric layer with dielectric constant lower than that of the oxide layer.
7. The method for copper filling of high aspect ratio opening pattern according to claim 6, wherein: the bottommost interlayer film is formed on the surface of the semiconductor substrate, and the front metal wire formed in the bottommost interlayer film is connected with the doped region at the bottom through the through hole; each of the interlayer films above the lowermost layer is formed on the interlayer film of the previous layer on which the front metal wiring has been formed, respectively.
8. The method for copper filling of high aspect ratio opening pattern according to claim 1, wherein: the aspect ratio of the opening pattern in the first step is greater than 2:1.
9. The method for copper filling of high aspect ratio opening pattern according to claim 1, wherein: the method further comprises the step of forming a copper diffusion barrier layer before forming the copper seed layer in the step two, wherein the copper diffusion barrier layer is formed on the inner side surface of the opening, and the copper seed layer is formed on the surface of the copper diffusion barrier layer.
10. The method for copper filling of high aspect ratio opening pattern according to claim 2, wherein: and secondly, forming the copper diffusion barrier layer by adopting a physical vapor deposition process method.
11. The method for copper filling of high aspect ratio opening pattern according to claim 1, wherein: and in the second step, the material of the copper diffusion barrier layer comprises Ta or TaN.
12. The method for copper filling of high aspect ratio opening pattern according to claim 1, wherein: and secondly, forming the copper seed crystal layer by using a physical vapor deposition method.
13. The method for copper filling of high aspect ratio opening pattern according to claim 1, wherein: and in the second step, the material of the copper seed crystal layer is pure copper.
14. The method for copper filling of high aspect ratio opening pattern according to claim 1, wherein: and in the second step, the copper seed crystal layer is made of copper alloy.
15. The method for copper filling of high aspect ratio opening pattern according to claim 1, wherein: the material of the copper alloy in the second step comprises at least one of Al and Mn.
16. The method for copper filling of high aspect ratio opening pattern according to claim 1, wherein: and thirdly, treating the copper oxide by utilizing a reducing gas so that the copper oxide on the surface of the copper seed layer is reduced to copper.
17. The method for copper filling of high aspect ratio opening pattern according to claim 6, wherein: the reducing gas in the third step is H2.
18. The method for copper filling of high aspect ratio opening pattern according to claim 1, wherein: and in the fourth step, the cleaning liquid is water or copper sulfate solution.
19. The method for copper filling of high aspect ratio opening pattern according to claim 1, wherein: in the fourth step, the treating the surface of the copper seed layer with the cleaning solution includes: placing the semiconductor substrate with the opening pattern horizontally; and spraying the cleaning liquid on the surface of the semiconductor substrate in a movable scanning mode by using a water spraying device, or spraying the cleaning liquid in the middle of rotating the semiconductor substrate.
20. The method for copper filling of high aspect ratio opening pattern according to claim 1, wherein: the interval between the end time of the surface treatment of the copper seed layer with the cleaning liquid in the fourth step and the start time of the formation of the copper layer filling the opening pattern on the copper seed layer in the fifth step is less than five minutes.
21. The method for copper filling of high aspect ratio opening pattern according to claim 1, wherein: and fifthly, forming the copper layer by using an electroplating method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311196010.2A CN117198993A (en) | 2023-09-15 | 2023-09-15 | Copper filling method for high aspect ratio opening pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311196010.2A CN117198993A (en) | 2023-09-15 | 2023-09-15 | Copper filling method for high aspect ratio opening pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117198993A true CN117198993A (en) | 2023-12-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311196010.2A Pending CN117198993A (en) | 2023-09-15 | 2023-09-15 | Copper filling method for high aspect ratio opening pattern |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117198993A (en) |
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2023
- 2023-09-15 CN CN202311196010.2A patent/CN117198993A/en active Pending
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