CN117197171B

CN117197171B - Graphic contour detection method, device and storage medium

Info

Publication number: CN117197171B
Application number: CN202311462092.0A
Authority: CN
Inventors: 李田; 田世明; 姚康政; 席娟; 陈雪莲
Original assignee: Suzhou Peifengtunan Semiconductor Co ltd
Current assignee: Suzhou Peifengtunan Semiconductor Co ltd
Priority date: 2023-11-06
Filing date: 2023-11-06
Publication date: 2024-01-30
Anticipated expiration: 2043-11-06
Also published as: CN117197171A

Abstract

The invention discloses a method, a device and a storage medium for detecting a figure outline. The method comprises the following steps: obtaining a layout figure outline and an optical imaging outline; the layout figure outline comprises first vertexes, and a line segment between two adjacent first vertexes is a first line segment; the optical imaging contour comprises second vertexes, and a line segment between two adjacent second vertexes is a second line segment; determining an initial calculation interval and a first critical dimension according to a preset first line segment and a relative first vertex; determining at least one target calculation interval according to at least one second vertex corresponding to the initial calculation interval; and calculating a second critical dimension in the target calculation interval, and detecting defects of a preset first line segment and a second line segment corresponding to the first line segment in the first direction according to the first critical dimension and the second critical dimension. The technical scheme of the embodiment of the invention can improve the calculation efficiency and the accuracy of defect detection on the graph outline.

Description

Graphic contour detection method, device and storage medium

Technical Field

The embodiment of the invention relates to the technical field of lithography simulation, in particular to a method and a device for detecting a figure outline and a storage medium.

Background

In semiconductor processes, photolithography processes are extremely important to be able to etch specific patterns back onto photoresist layers. With the development of semiconductor technology, the size limit of the pattern which can be etched by the photoetching technology is gradually reduced, and the precision is gradually improved.

At present, in order to improve the production yield of integrated circuits, most of lithography defects in formed lithography patterns can be avoided by correcting a design layout in a lithography process. However, due to the influence of the photolithography process and other factors, defects still occur in local areas in the corrected photolithography pattern, for example: bridging and necking, etc., resulting in failure of the integrated circuit. Therefore, the photoetching simulation is carried out on the design layout, and the defect detection is carried out on the photoetching pattern outline obtained by the simulation. However, in the prior art, the method for detecting the defects of the simulated lithography pattern outline includes methods such as pattern matching and machine learning, but the methods have the problems of low calculation efficiency and low accuracy.

Disclosure of Invention

The invention provides a method, a device and a storage medium for detecting a figure outline, which are used for improving the calculation efficiency and the accuracy of defect detection on the figure outline.

According to an aspect of the present invention, there is provided a graphic profile detection method including:

obtaining a layout figure outline and an optical imaging outline; the layout figure outline comprises first vertexes, and a line segment between two adjacent first vertexes is a first line segment; the optical imaging contour comprises second vertexes, and a line segment between two adjacent second vertexes is a second line segment;

determining an initial calculation interval and a first critical dimension according to a preset first line segment and the first vertex which is opposite to the preset first line segment; the initial calculation interval corresponds to at least part of the preset first line segment; the first critical dimension is a distance between the preset first line segment and the opposite first line segment along a first direction, and the first direction is perpendicular to an extending direction of the preset first line segment;

determining at least one target calculation interval according to at least one second vertex corresponding to the initial calculation interval; the target calculation interval comprises at least part of the preset first line segment, at least part of the opposite first line segment and two second line segments;

calculating a second critical dimension in the target calculation interval, and performing defect detection on the preset first line segment and the second line segment corresponding to the opposite first line segment in the first direction according to the first critical dimension and the second critical dimension; the second critical dimension is a distance between the two second line segments.

Optionally, the determining the initial calculation interval and the first critical dimension according to the preset first line segment and the opposite first vertex includes:

establishing a first screening range according to the preset first line segment and the position of the preset first line segment shifted by a first distance to the first direction; the first screening range is a rectangular range taking the preset first line segment as one side;

screening the first line segment in the first screening range according to the layout figure outline and the first screening range to serve as the opposite first line segment; the opposite first line segment is parallel to the preset first line segment;

and according to the first vertex on the opposite first line segment, making a vertical line to the preset first line segment so as to divide the preset first line segment, and determining at least one initial calculation interval and the first critical dimension of the initial calculation interval.

Optionally, the determining at least one target calculation interval according to at least one second vertex corresponding to the initial calculation interval includes:

establishing a second screening range according to the position of the preset first line segment at least partially shifted to the first direction by a second distance and the position of the preset first line segment at least partially shifted to the opposite direction of the first direction by a third distance; wherein the second distance is the sum of the first critical dimension and the third distance;

Screening out the second vertex in the second screening range according to the second screening range;

and according to the second vertex, making a vertical line to the preset first line segment so as to divide at least part of the preset first line segment and determine at least one target calculation interval.

Optionally, the calculating the second critical dimension in the target calculation interval includes:

in the target calculation interval, a third screening range is established according to the position of the preset first line segment at least partially shifted to the first direction by a second distance and the position of the preset first line segment at least partially shifted to the opposite direction of the first direction by a third distance; wherein the second distance is the sum of the first critical dimension and the third distance;

screening out two second line segments in the third screening range according to the third screening range;

and calculating the second critical dimension between each position on the two second line segments.

Optionally, the calculating the second critical dimension between each position on the two second line segments includes:

determining the second critical dimension between each position on the two second line segments according to the maximum critical dimension and the minimum critical dimension between the two second line segments and the length of the corresponding part of the preset first line segment and the second line segment in the first direction; wherein the second critical dimension between locations on the two second line segments varies linearly.

Optionally, defect detection is performed on the second line segment opposite to the first line segment in the same optical imaging profile, and the first direction is a direction rotated 90 ° counterclockwise along the extending direction of the preset first line segment;

and detecting defects of the second line segments which are opposite to each other in different optical imaging contours, wherein the first direction is a direction rotated by 90 degrees clockwise along the extending direction of the preset first line segment.

Optionally, the performing defect detection on the preset first line segment and the second line segment corresponding to the opposite first line segment in the first direction according to the first critical dimension and the second critical dimension includes:

obtaining a ratio for the second critical dimension to the first critical dimension;

comparing the ratio with a first defect threshold, and if the ratio is smaller than the first defect threshold, determining that the second line segment has defects;

or,

performing difference on the second critical dimension and the first critical dimension to obtain a difference value;

and comparing the difference value with a second defect threshold value, and if the difference value is smaller than the second defect threshold value, determining that the second line segment has defects.

Optionally, the obtaining the layout pattern outline and the optical imaging outline includes:

obtaining a layout figure outline;

correcting the layout graph outline to obtain a graph correction outline;

and performing photoetching simulation calculation on the graph correction contour to obtain the optical imaging contour.

According to another aspect of the present invention, there is provided a graphic profile detection apparatus including:

the figure acquisition module is used for acquiring a figure outline and an optical imaging outline of the layout; the layout figure outline comprises first vertexes, and a line segment between two adjacent first vertexes is a first line segment; the optical imaging contour comprises second vertexes, and a line segment between two adjacent second vertexes is a second line segment;

the initial interval determining module is used for determining an initial calculation interval and a first key size according to a preset first line segment and the first vertex which is opposite to the preset first line segment; the initial calculation interval corresponds to at least part of the preset first line segment; the first critical dimension is a distance between the preset first line segment and the opposite first line segment along a first direction, and the first direction is perpendicular to an extending direction of the preset first line segment;

The target interval determining module is used for determining at least one target calculation interval according to at least one second vertex corresponding to the initial calculation interval; the target calculation interval comprises at least part of the preset first line segment and the opposite first line segment, and two second line segments;

the contour detection module is used for calculating a second critical dimension in the target calculation interval and carrying out defect detection on the preset first line segment and the second line segment corresponding to the opposite first line segment in the first direction according to the first critical dimension and the second critical dimension; the second critical dimension is a distance between the two second line segments.

According to another aspect of the present invention, there is also provided a computer readable storage medium storing computer instructions for causing a processor to implement the method for detecting a graphic profile according to any embodiment of the first aspect when executed.

The technical scheme of the embodiment of the invention obtains the layout pattern outline and the optical imaging outline, wherein the layout pattern outline is formed by connecting first line segments formed between two adjacent first vertexes, and the optical imaging outline is formed by connecting second line segments formed between two adjacent second vertexes. According to a preset first line segment in the layout pattern outline and a first vertex corresponding to the preset first line segment in the first direction, an initial calculation interval is determined, and a first critical dimension between at least part of the preset first line segment and the opposite first line segment, which are opposite in the initial calculation interval, is calculated. And determining at least one target calculation interval by the initial calculation interval according to at least one second vertex in the initial calculation interval, so that the target calculation interval only comprises at least part of a preset first line segment, at least part of an opposite first line segment and two opposite second line segments. And calculating a second critical dimension between the two second line segments, and detecting defects of the two second line segments according to the size relation between the first critical dimension and the second critical dimension. By adopting the graphic outline detection method provided by the embodiment of the invention, the calculation efficiency and the accuracy of outline defect detection can be effectively improved.

It should be understood that the description in this section is not intended to identify key or critical features of the embodiments of the invention or to delineate the scope of the invention. Other features of the present invention will become apparent from the description that follows.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

FIG. 1 is a schematic flow chart of a method for detecting a graphic outline according to an embodiment of the invention;

fig. 2 is a schematic flowchart of step S120 in a graph contour detection method according to an embodiment of the present invention;

fig. 3 is a schematic diagram of performing step S120 in a graph profile detection method according to an embodiment of the present invention;

FIG. 4 is a schematic diagram of calculating an inner critical dimension of a graphic profile and an outer critical dimension of the graphic profile using a graphic profile detection method according to an embodiment of the present invention;

Fig. 5 is a schematic flowchart of step S130 in a graph contour detection method according to an embodiment of the present invention;

fig. 6 is a schematic diagram of performing step S130 in a graph profile detection method according to an embodiment of the present invention;

fig. 7 is a schematic flowchart of step S140 in a graph profile detection method according to an embodiment of the present invention;

fig. 8 is a schematic diagram of performing step S140 in a graph profile detection method according to an embodiment of the present invention;

fig. 9 is a schematic diagram of performing step S140 in a graph profile detection method according to an embodiment of the present invention;

FIG. 10 is a schematic diagram of an application example of yet another graphic profile detection method according to an embodiment of the present invention;

fig. 11 is a schematic flowchart of step S110 in a graph profile detection method according to an embodiment of the present invention;

FIG. 12 is a schematic diagram of a graphic profile detection apparatus according to an embodiment of the present invention;

fig. 13 is a schematic structural diagram of an electronic device according to an embodiment of the present invention.

Detailed Description

In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.

It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.

The embodiment of the invention provides a graph contour detection method. Fig. 1 is a schematic flow chart of a method for detecting a graphic profile according to an embodiment of the present invention, where the method may be applied to a situation of performing defect detection on an optical imaging profile, and the method may be performed by a graphic profile detection device, where the graphic profile detection device may be implemented in a form of hardware and/or software, and the graphic profile detection device may be configured in an electronic device such as a computer or a server. As shown in fig. 1, the method for detecting the figure outline specifically includes the following steps:

S110, obtaining a layout figure outline and an optical imaging outline; the layout figure outline comprises first vertexes, and a line segment between two adjacent first vertexes is a first line segment; the optical imaging contour comprises second vertexes, and a line segment between two adjacent second vertexes is a second line segment.

The layout pattern outline is an ideal pattern designed by a user according to actual requirements, and the optical imaging outline is a pattern outline for defect detection obtained by simulation calculation according to the layout pattern outline. The layout figure outline comprises a plurality of first vertexes, and because the line segment between two adjacent first vertexes is the first line segment, the layout figure outline is formed by connecting a plurality of first line segments along the anticlockwise direction; the optical pattern contour comprises a plurality of second vertexes, and since the line segment between two adjacent second vertexes is the second line segment, the optical pattern contour is formed by connecting the plurality of second line segments along the anticlockwise direction.

S120, determining an initial calculation interval and a first critical dimension according to a preset first line segment and a relative first vertex; the initial calculation interval corresponds to at least part of a preset first line segment; the first critical dimension is a distance between a preset first line segment and an opposite first line segment along a first direction, and the first direction is perpendicular to an extending direction of the preset first line segment.

The critical dimensions (Critical Dimension, CD) refer to a specific line pattern that is specifically designed to reflect the line width of the integrated circuit features during the integrated circuit photomask fabrication and photolithography processes in order to evaluate and control the process's pattern processing accuracy. Selecting any one first line segment of the layout pattern outline as a preset first line segment, wherein the preset first line segment is corresponding to at least one first vertex in a first direction perpendicular to the extending direction of the preset first line segment. According to the preset first line segment and the corresponding first vertex, an initial calculation interval is determined on the preset first line segment, and the opposite first line segment is a line segment of the preset first line segment in the initial calculation interval, at least part of which is opposite in the first direction. In the determined initial calculation interval, only one preset first line segment and one opposite first line segment which are opposite in the first direction are included. Therefore, according to the determined initial calculation interval, the distance between the preset first line segment and the opposite first line segment, i.e. the first critical dimension, which are opposite in the initial calculation interval can be determined.

S130, determining at least one target calculation interval according to at least one second vertex corresponding to the initial calculation interval; the target calculation interval comprises at least part of a preset first line segment, at least part of a subtended first line segment and two second line segments.

In an exemplary embodiment, after determining the initial calculation interval, at least one target calculation interval is obtained from the initial calculation interval according to at least one second vertex included in the initial calculation interval, so that the obtained target calculation interval includes only at least a portion of a preset first line segment and at least a portion of a first line segment facing the preset first line segment, and two second line segments facing the preset first line segment.

S140, calculating a second critical dimension in the target calculation interval, and detecting defects of a preset first line segment and a second line segment corresponding to the first line segment in the first direction according to the first critical dimension and the second critical dimension; the second critical dimension is a distance between the two second line segments.

Illustratively, a second critical dimension between two second line segments is calculated from the two second line segments in the target calculation interval. According to the size relation between the first critical dimension and the second critical dimension, defect detection can be performed on two opposite second line segments in the target calculation interval to determine whether the distance between the two second line segments is too close or not, and defects such as bridging or necking occur. By using the pattern contour detection method provided by the embodiment, the calculation efficiency and accuracy of defect detection on the pattern contour can be effectively improved.

Optionally, fig. 2 is a specific flowchart of step S120 in a graph profile detection method according to an embodiment of the present invention, and fig. 3 is a schematic diagram of executing step S120 in a graph profile detection method according to an embodiment of the present invention. On the basis of the above embodiment, referring to fig. 2 and 3, in step S120, an initial calculation interval and a first critical dimension are determined according to a preset first line segment and a first opposite vertex, and the method specifically includes the following steps:

s121, according to a preset first line segment and a position of shifting a first distance from the preset first line segment to a first direction, a first screening range is established; the first screening range is a rectangular range taking a preset first line segment as one side.

Exemplary, the method for detecting a graphic profile according to the present embodiment may detect defects of the second line segment opposite to the same optical imaging profile, or detect defects of the second line segment opposite to the second line segment in different optical imaging profiles, and fig. 4 is a schematic diagram of calculating an internal critical dimension of the graphic profile and an external critical dimension of the graphic profile by using the method for detecting a graphic profile according to the present embodiment. As shown in fig. 4, for calculating the internal critical dimension of the graphic outline and the external critical dimension of the graphic outline, the difference between the two is that when defect detection is performed on a second line segment opposite to the internal of the same graphic outline, the first direction is a direction rotated 90 ° counterclockwise along the extending direction of the preset first line segment; when the defect detection is performed on the second line segment opposite to the outer part of the different graph outlines, the first direction is a direction rotated 90 degrees clockwise along the extending direction of the preset first line segment. In fig. 4, the direction of the solid arrow indicates the extending direction of the preset first line segment, and the direction of the dotted arrow indicates the first direction. In this embodiment, the pattern contour detection method will be described taking as an example defect detection of a second line segment opposing to the same optical imaging contour.

In order to improve the calculation efficiency of defect detection on the profile, a first screening range is established according to a preset first line segment before an initial calculation interval is determined, so that only the first line segment in the first screening range can be screened. Referring to fig. 3, a solid line pattern outline 01 is a layout pattern outline, and a thin broken line pattern outline 02 is an optical imaging outline. Taking the line segment T1T2 as an example of the preset first line segment, the extending direction of the line segment T1T2 is horizontal to the right, i.e., the direction N1 shown by an arrow in fig. 3. Thus, a 90 ° counterclockwise rotation from the N1 direction is the first direction, i.e., the N2 direction shown by the arrow in fig. 3. The line segment T1T2 is offset by a first distance d1 in the direction of N2, at which the furthest position of the first screening range in the direction of N2 is determined. The rectangular first screening range can be established according to the line segment T1T2, the determined furthest position of the first screening range and the length of the line segment T1T 2. The first screening range is indicated in fig. 3 by a thick dashed rectangular outline 03. The first line segment is preset as one edge of the first screening range. For example, the first distance of the offset may be set according to the actual situation, and the first screening range established by meeting may include all the portions corresponding to the layout pattern outline and the optical imaging outline, which is not limited herein. However, the first distance is not settable too large, so as not to increase the calculation amount and reduce the calculation efficiency.

S122, screening a first line segment in the first screening range according to the layout figure outline and the first screening range to serve as a subtended first line segment; the opposite first line segment is parallel to the preset first line segment.

The line segments in the first filtering range are filtered to obtain first line segments in the first filtering range, and the first line segments obtained by filtering are used as the first line segments opposite to the preset first line segments. It should be noted that, when the first screening range is used for screening, at least one opposite first line segment of the preset first line segment can be obtained, and the number of the opposite first line segments is not limited herein. The opposite first line segment is parallel to the preset first line segment in the first direction, so that the first critical dimension between the opposite first line segment and the preset first line segment is equal at any position of one opposite first line segment.

S123, according to a first vertex on the opposite first line segment, making a vertical line to the preset first line segment so as to divide the preset first line segment, and determining at least one initial calculation interval and a first key size of the initial calculation interval.

For example, the opposite first line segment may include at least one first line segment, and a perpendicular line is drawn from all first vertices on the at least one first line segment to the preset first line segment, so that the preset first line segment is divided into at least one segment, each segment in the preset first line segment is determined as an initial calculation interval, and a first critical dimension between at least a portion of the preset first line segment and at least a portion of the opposite first line segment in the initial calculation interval is calculated. For example, referring to fig. 3, the first line segment opposite to the preset first line segment, which is screened out in the first screening range, has a line segment t1t2 and a line segment t3t4, and the first vertices included on the opposite first line segment are a point t1, a point t2, a point t3 and a point t4, respectively. As can be seen from fig. 3, the first critical dimension between the line segment t1t2 and the preset first line segment is different from the first critical dimension between the line segment t3t4 and the preset first line segment. Therefore, the preset first line segment can be divided into a plurality of segments by making a vertical line from each first vertex to the preset first line segment, for example: the line segment T1T2 may be divided into a line segment T1T3 and a line segment T3T2, and the line segment T1T3 and the line segment T3T2 are individually calculated as two initial calculation sections, respectively. The initial calculation interval corresponding to the line segment T1T3 includes at least a portion of the preset first line segment, i.e., the line segment T1T3, and at least a portion of the opposite first line segment, i.e., the line segment T1T2. Since the line segment T1T3 and the line segment T1T2 are parallel to each other, the first critical dimensions at any position on the line segment T1T3 and the line segment T1T2 in the initial calculation section are equal. Therefore, the preset first line segment is divided according to the first vertex on the opposite first line segment, at least part of the preset first line segment in the determined initial calculation interval and at least part of the opposite first line segment are equal at any position, so that the first critical dimension can be calculated after the initial calculation interval is determined, and subsequent calculation is facilitated.

According to the technical scheme of the embodiment, the preset first line segment is divided into at least one initial calculation interval according to the perpendicular lines of the first vertexes on the opposite first line segment in the first screening range, so that the first critical dimension between at least part of the corresponding preset first line segment and at least part of the opposite first line segment in the initial calculation interval can be equal at any position, the first critical dimension can be calculated and determined, and the subsequent calculation is convenient.

Optionally, fig. 5 is a specific flowchart of step S130 in a method for detecting a graphic profile according to an embodiment of the present invention, and fig. 6 is a schematic diagram of executing step S130 in a method for detecting a graphic profile according to an embodiment of the present invention. On the basis of the above embodiments, referring to fig. 5 and 6, in step S130, at least one target calculation interval is determined according to at least one second vertex corresponding to the initial calculation interval, and specifically includes the following steps:

s131, establishing a second screening range according to the position of the preset first line segment, wherein the position is offset by a second distance from at least part of the preset first line segment to the first direction, and the position of the preset first line segment, wherein the position is offset by a third distance from at least part of the preset first line segment to the opposite direction of the first direction; the second distance is the sum of the first critical dimension and the third distance.

Illustratively, after the initial calculation intervals are determined, each initial calculation interval is further refined separately. Shifting the position of the second distance to the first direction according to at least part of a preset first line segment in the initial calculation interval to serve as the farthest position of the second screening range in the first direction; and (3) shifting the position of the third distance to the opposite direction of the first direction according to at least part of the preset first line segment in the initial calculation interval to serve as the farthest position of the second screening range in the opposite direction of the first direction. And establishing a second screening range of the rectangle according to the furthest position in the first direction, the furthest position in the opposite direction of the first direction and the length of the initial calculation interval. For example, the third distance may be set by the user according to the actual requirement, and is not limited herein, as long as the established second screening range may include the optical imaging profile corresponding to the initial calculation interval. The second distance is the first critical dimension of the initial calculated interval plus the length of the third distance. For example, referring to fig. 6, taking an example of subdivision of the initial calculation interval determined by the line segment T1T3, the extending direction of the line segment T1T3 is still horizontal to the right, i.e., the N1 direction, the distance from the line segment T1T3 to the first direction, i.e., the N2 direction, shifted by the sum of the first critical dimension d2 and the third distance d3, and the distance from the line segment T1T3 to the opposite direction of the first direction, shifted by the third distance d3, thereby establishing the second screening range of the rectangular frame B1B2B3B4, which can be represented by the thick dashed rectangular outline 04 in fig. 6. By establishing the second screening range, the screening range of the second line segment can be reduced, so that a certain calculated amount is reduced, and the screening efficiency and the screening accuracy are improved.

S132, screening out a second vertex in the second screening range according to the second screening range.

Illustratively, the second vertex on the optical imaging profile in the second screening range is screened. Note that, referring to fig. 6, the optical imaging profile is represented by a thin-dashed line graphic profile 02. Since fig. 6 shows the optical imaging profile after a certain multiple of reduction, and shows a smooth curve profile, but when the optical imaging profile is enlarged to a certain multiple, it is known that the optical imaging profile is also formed by connecting a plurality of small second line segments counterclockwise, and is not actually a smooth curve profile, and therefore, a plurality of second peaks are also provided on the optical imaging profile, which is described herein. Portions of the optical imaging profile within the second screening range are screened to determine a second vertex within the second screening range. Illustratively, referring to FIG. 6, the second vertices screened out by the second screening range are points A1, A2, and A3, respectively.

S133, according to the second vertex, making a perpendicular line to the preset first line segment so as to divide at least part of the preset first line segment and determine at least one target calculation interval.

For example, each second vertex in the second screening range screened out is perpendicular to the preset first line segment, at least part of the preset first line segment in the initial calculation section may be divided, and each section in at least part of the preset first line segment is determined as one target calculation section, so that the initial calculation section may be divided into at least one target calculation section. Each target calculation interval determined by the method only comprises two second line segments which are opposite in the first direction, so that the second critical dimension between the two second line segments is calculated. The two second line segments may or may not be parallel to each other, as examples, and are not limited in this regard. It should be noted that, when the second vertex screened in the second screening range coincides with the contour of the second screening range, the determined target calculation interval is still the initial calculation interval, and at least part of the preset first line segment is not required to be divided. At this time, the two second line segments in the second screening range are parallel to each other. In addition, all other cases can divide at least part of the preset first line segment to determine at least two target calculation intervals. Illustratively, with continued reference to fig. 6, the point A1, the point A2, and the point A3 in the second vertex are respectively perpendicular to the preset first line segment, and the line segment T1T3 in the initial calculation section is divided into four segments, which are respectively the line segment T1T4, the line segment T4T5, the line segment T5T6, and the line segment T6T3. And determining each segment in the divided preset first line segments as a target calculation interval, and determining 4 target calculation intervals.

The technical scheme of the embodiment achieves the effects of reducing the screening range and improving the screening efficiency and accuracy by establishing the second screening range. Screening to obtain second vertexes in a second screening range, and dividing at least part of the preset first line segments according to the second vertexes, so that the initial calculation interval is divided into target calculation intervals, the target calculation interval only comprises two second line segments, and the subsequent calculation of a second critical dimension between the two second line segments is facilitated.

Optionally, fig. 7 is a specific flowchart of step S140 in a graph profile detection method according to an embodiment of the present invention, and fig. 8 is a schematic diagram of executing step S140 in a graph profile detection method according to an embodiment of the present invention. On the basis of the above embodiments, referring to fig. 7 and 8, the step S140 of calculating the second critical dimension in the target calculation section specifically includes the following steps:

s141, in the target calculation interval, establishing a third screening range according to the position of shifting a second distance from at least part of a preset first line segment to the first direction and the position of shifting a third distance from at least part of the preset first line segment to the opposite direction of the first direction; the second distance is the sum of the first critical dimension and the third distance.

In an exemplary embodiment, before calculating the second critical dimension in the target calculation section, a third screening range is first established for the target calculation section, so as to reduce the screening range when screening the second line segment, which is beneficial to improving the screening efficiency and accuracy. In the method for establishing the third screening range for the target calculation interval, only that at least part of the preset first line segment is one segment of the preset first line segment in the initial calculation interval after being divided according to the second vertex, and other steps are the same as those of the method for establishing the second screening range for the initial calculation interval, and no description is given here. For example, referring to fig. 8, the established third screening range may be represented by a thick dashed rectangular outline 05.

S142, screening out two second line segments in the third screening range according to the third screening range.

For example, two second line segments on the optical imaging contour are obtained by screening in the third screening range, see fig. 8, and line segments A6A4 and A3A5 on the optical imaging contour are two second line segments in the screened third screening range.

S143, calculating a second critical dimension between each position on the two second line segments.

For example, since there may be a case where the two second line segments in the target calculation section are not parallel to each other, the second critical dimensions between the two second line segments may be unequal at different positions, and therefore the second critical dimensions at the respective positions on the two second line segments need to be calculated to perform defect detection on the respective positions on the optical imaging profile in the target calculation section.

Optionally, on the basis of the foregoing embodiments, the calculating the second critical dimension between the positions on the two second line segments in step S143 specifically includes the following steps:

s1431, determining a second critical dimension between positions on two second line segments according to the maximum critical dimension and the minimum critical dimension between the two second line segments and the length of a part of the first line segment corresponding to the second line segments in the first direction in advance; wherein the second critical dimension between the locations on the two second line segments varies linearly.

For example, for the case that the two second line segments in the target calculation interval are not parallel to each other, there may be a maximum second critical dimension and a minimum second critical dimension between the two second line segments at the beginning and the end, and the second critical dimension at each location decreases linearly from the maximum second critical dimension to the minimum second critical dimension. With continued reference to fig. 8, the line segment A6A4 and the line segment A3A5 in the target calculation section are not parallel to each other, and the extending direction of the line segment A6A4 is horizontal to the right, i.e., the n1 direction shown in fig. 8; the extending direction of the line segment A3A5 is the horizontal left, i.e., the n2 direction shown in fig. 8. Therefore, the minimum second critical dimension between the line segment A6A4 and the line segment A3A5 is the distance between the end of the line segment A6A4 and the start of the line segment A3A5, the maximum second critical dimension between the line segment A6A4 and the line segment A3A5 is the distance between the start of the line segment A6A4 and the end of the line segment A3A5, i.e. the critical dimension D1 in fig. 8 is the maximum second critical dimension, and the critical dimension D2 is the minimum second critical dimension. The second critical dimension at each location between line segment A6A4 and line segment A3A5 is calculated according to equation (1). Equation (1) can be expressed in the following form:

y=(D2-D1)×x/L+D1 （1）

Wherein D1 represents a maximum critical dimension; d2 represents the minimum critical dimension; l represents the length of at least part of a preset first line segment in the target calculation interval, namely the length of a line segment T1T 4; x represents the distance between the calculated position point and the starting point side of at least part of the preset first line segment, i.e. the distance between the calculated position point and the point T1 side, and y represents the second critical dimension at the calculated position point.

According to the above formula (1), the second critical dimension at any position on the two second line segments can be calculated. For the case where the two second line segments are parallel to each other, calculating the second critical dimension is also applicable to equation (1). In this case, D1 is equal to D2, and the second critical dimension at any position between the two line segments is the length of D1 or D2.

According to the technical scheme, a third screening range is established according to the target calculation interval, two second line segments are screened, and a corresponding formula is adopted to calculate a second critical dimension at any position between the two second line segments. The method for calculating the second critical dimension provided by the embodiment is suitable for two second line segments which are not parallel to each other and two second line segments which are parallel to each other, so that the second critical dimension can be accurately and rapidly calculated.

Optionally, on the basis of the foregoing embodiments, in step S140, defect detection is performed on a preset first line segment and a second line segment corresponding to the first line segment in the first direction according to the first critical dimension and the second critical dimension, and specifically includes the following steps:

for example, the defect detection may be performed according to the ratio of the first critical dimension to the second critical dimension, which includes the following steps:

s144, obtaining the ratio of the second critical dimension to the first critical dimension.

Illustratively, dividing the second critical dimension by the first critical dimension may result in a ratio therebetween.

S145, comparing the ratio with a first defect threshold, and if the ratio is smaller than the first defect threshold, determining that the second line segment has defects.

Illustratively, the first defect threshold may be set by the user at his own discretion, as desired, without limitation. Comparing the ratio of the second critical dimension to the first critical dimension with the first defect threshold, if the ratio is smaller than the first defect threshold, the second critical dimension is smaller than the first critical dimension, namely when the optical imaging contour inside the same graph contour is subjected to defect detection, the distance between two second line segments in the target calculation interval is smaller than the distance inside the graph contour of the layout, namely the second line segments have necking defects; when the defect detection is carried out on the optical imaging contours outside different graph contours, the distance between the two second line segments in the target calculation interval is too small outside the graph contours of the layout, namely the second line segments have bridging defects.

For example, the defect detection may also be performed according to the difference between the first critical dimension and the second critical dimension, which includes the following steps:

s146, performing difference on the second critical dimension and the first critical dimension to obtain a difference value.

Illustratively, subtracting the first critical dimension from the second critical dimension yields a difference therebetween.

And S147, comparing the difference value with a second defect threshold value, and if the difference value is smaller than the second defect threshold value, determining that the second line segment has defects.

Illustratively, the second defect threshold may be set by the user at his own discretion, as desired, without limitation. Comparing the difference value between the second critical dimension and the first critical dimension with a second defect threshold value, if the difference value is smaller than the second defect threshold value, the second critical dimension is smaller than the first critical dimension, namely when the defect detection is carried out on the optical imaging contour in the same graph contour, the distance between two second line segments in a target calculation interval is smaller than the distance between the two second line segments in the layout graph contour, namely the second line segments have necking defects; when the defect detection is carried out on the optical imaging contours outside different graph contours, the distance between the two second line segments in the target calculation interval is too small outside the graph contours of the layout, namely the second line segments have bridging defects. Fig. 9 is a schematic diagram of an application example of a graph profile detection method according to an embodiment of the present invention, and fig. 10 is a schematic diagram of an application example of another graph profile detection method according to an embodiment of the present invention. Wherein fig. 9 shows a case of calculating critical dimensions inside the same graphic outline, and fig. 10 shows a case of calculating critical dimensions outside different graphic outlines. The solid line graphic outline 01 represents a layout graphic outline, the broken line graphic outline 02 represents an optical imaging outline, and the rectangular hatched area 06 represents an area where a defect exists. As can be seen from the illustration, fig. 9 shows the region of the photoimaging profile where necking defects are present, and fig. 10 shows the region of the photoimaging profile where bridging defects are present.

According to the embodiment, the first critical dimension and the second critical dimension are utilized for calculation, the calculated value is compared with the defect threshold value, whether the second line segment has defects or not is determined according to the comparison result, so that the layout pattern contour is conveniently modified and corrected according to the defect detection result, and the yield of the integrated circuit manufactured through the photoetching process is improved.

Optionally, fig. 11 is a schematic flowchart of step S110 in the method for detecting a graphic profile according to the embodiment of the present invention. On the basis of the above embodiments, as shown in fig. 11, the step S110 of obtaining the layout pattern contour and the optical imaging contour specifically includes the following steps:

s111, obtaining the outline of the layout figure.

S112, correcting the layout pattern outline to obtain the pattern correction outline.

Illustratively, the acquired layout pattern contour is corrected by adopting an optical proximity effect correction (Optical Proximity Correction, OPC) method, so that the pattern correction contour with relatively high accuracy is obtained.

S113, performing photoetching simulation calculation on the graph correction contour to obtain an optical imaging contour.

Illustratively, performing lithography simulation calculations based on the pattern corrected profile may improve the accuracy of the calculated optical imaging profile.

According to the technical scheme, the pattern correction contour is obtained after OPC correction is carried out on the layout pattern contour, the optical imaging contour is obtained through simulation calculation according to the pattern correction contour, and the accuracy of the optical imaging contour is improved, so that the calculation efficiency and accuracy of defect detection on the optical imaging contour are improved.

The embodiment of the invention also provides a device for detecting the figure outline. Fig. 12 is a schematic structural diagram of a graphic profile detection apparatus according to an embodiment of the present invention. As shown in fig. 12, the graphic profile detection apparatus 100 includes:

a pattern acquisition module 101 for acquiring a layout pattern profile and an optical imaging profile; the layout figure outline comprises first vertexes, and a line segment between two adjacent first vertexes is a first line segment; the optical imaging contour comprises second vertexes, and a line segment between two adjacent second vertexes is a second line segment;

the initial interval determining module 102 is configured to determine an initial calculation interval and a first critical dimension according to a preset first line segment and a first vertex; the initial calculation interval corresponds to at least part of a preset first line segment; the first critical dimension is the distance between a preset first line segment and an opposite first line segment along a first direction, and the first direction is perpendicular to the extending direction of the preset first line segment;

A target interval determining module 103, configured to determine at least one target calculation interval according to at least one second vertex corresponding to the initial calculation interval; the target calculation interval comprises a preset first line segment, at least part of the opposite first line segment and two second line segments;

the contour detection module 104 is configured to calculate a second critical dimension in the target calculation interval, and detect a defect of a preset first line segment and a second line segment corresponding to the first line segment in the first direction according to the first critical dimension and the second critical dimension; the second critical dimension is a distance between the two second line segments.

The graphic outline detection device provided by the embodiment of the invention can execute the graphic outline detection method provided by any embodiment of the invention, and has the corresponding functional modules and beneficial effects of the execution method. Specifically, the pattern acquisition module 101 acquires a layout pattern profile and an optical imaging profile; the initial interval determining module 102 determines an initial calculation interval and a first key size according to a preset first line segment in the layout graph outline and a first vertex corresponding to the preset first line segment in a first direction; the target interval determining module 103 determines at least one target calculation interval from the initial calculation interval according to at least one second vertex in the initial calculation interval; the contour detection module 104 calculates a second critical dimension in the target calculation interval, and performs defect detection on a preset first line segment and a second line segment corresponding to the first line segment in the first direction according to the first critical dimension and the second critical dimension. Therefore, the defect detection is carried out on the optical imaging outline, and the calculation efficiency and the accuracy of outline defect detection can be effectively improved.

Optionally, on the basis of the above embodiment, the initial interval determining module 102 includes:

the first screening range establishing unit is used for establishing a first screening range according to a preset first line segment and a position of the preset first line segment, which is shifted to a first direction by a first distance; the first screening range is a rectangular range taking a preset first line segment as one side;

the opposite line segment screening unit is used for screening a first line segment in the first screening range according to the layout figure outline and the first screening range to serve as an opposite first line segment; the opposite first line segment is parallel to the preset first line segment;

the first critical dimension calculating unit is used for making a vertical line to a preset first line segment according to a first vertex on the opposite first line segment so as to divide the preset first line segment and determine at least one initial calculation interval and a first critical dimension of the initial calculation interval.

Optionally, on the basis of the above embodiment, the target interval determining module 103 includes:

a second screening range establishing unit, configured to establish a second screening range according to a position shifted by a second distance from at least a portion of the preset first line segment to the first direction and a position shifted by a third distance from at least a portion of the preset first line segment to the opposite direction of the first direction; the second distance is the sum of the first critical dimension and the third distance;

The second vertex screening unit is used for screening out a second vertex in the second screening range according to the second screening range;

and the target calculation interval determining unit is used for making a vertical line to the preset first line segment according to the second vertex so as to divide at least part of the preset first line segment and determine at least one target calculation interval.

Optionally, based on the above embodiment, the profile detection module 104 includes:

a third screening range establishing unit, configured to establish a third screening range in the target calculation interval according to a position shifted by a second distance from at least a portion of the preset first line segment to the first direction and a position shifted by a third distance from at least a portion of the preset first line segment to the opposite direction of the first direction; the second distance is the sum of the first critical dimension and the third distance;

the second line segment screening unit is used for screening out two second line segments in the third screening range according to the third screening range;

and the second critical dimension calculating unit is used for calculating the second critical dimension between each position on the two second line segments.

Optionally, on the basis of the foregoing embodiment, the second critical dimension calculating unit is further configured to determine the second critical dimension between each position on the two second line segments according to the maximum critical dimension and the minimum critical dimension between the two second line segments, and a preset length of a portion of the first line segment corresponding to the second line segment in the first direction; wherein the second critical dimension between the locations on the two second line segments varies linearly.

Optionally, on the basis of the above embodiment, the profile detection module 104 further includes:

the ratio calculating unit is used for obtaining a ratio for the second critical dimension and the first critical dimension;

the first defect detection unit is used for comparing the ratio with a first defect threshold value, and if the ratio is smaller than the first defect threshold value, determining that the second line segment has defects;

or,

the difference value calculating unit is used for carrying out difference on the second critical dimension and the first critical dimension to obtain a difference value;

and the second defect detection unit is used for comparing the difference value with a second defect threshold value, and determining that the second line segment has defects if the difference value is smaller than the second defect threshold value.

Optionally, on the basis of the above embodiment, the graphics acquisition module 101 includes:

the layout acquisition unit is used for acquiring the outline of the layout figure;

the outline correction unit is used for correcting the outline of the layout graph to obtain a graph correction outline;

and the simulation calculation unit is used for carrying out photoetching simulation calculation on the graph correction contour to obtain an optical imaging contour.

The embodiment of the invention also provides electronic equipment. Fig. 13 is a schematic structural diagram of an electronic device according to an embodiment of the present invention. Electronic devices are intended to represent various forms of digital computers, such as laptops, desktops, workstations, personal digital assistants, servers, blade servers, mainframes, and other appropriate computers. The electronic device may also represent various forms of mobile devices, such as personal digital assistants, cellular telephones, smartphones, and other similar computing devices. The components shown herein, their connections and relationships, and their functions, are meant to be exemplary only, and are not meant to limit implementations of the inventions described and/or claimed herein.

As shown in fig. 13, the electronic device 10 includes at least one processor 11, and a memory, such as a Read Only Memory (ROM) 12, a Random Access Memory (RAM) 13, etc., communicatively connected to the at least one processor 11, in which the memory stores a computer program executable by the at least one processor, and the processor 11 may perform various appropriate actions and processes according to the computer program stored in the Read Only Memory (ROM) 12 or the computer program loaded from the storage unit 18 into the Random Access Memory (RAM) 13. In the RAM 13, various programs and data required for the operation of the electronic device 10 may also be stored. The processor 11, the ROM 12 and the RAM 13 are connected to each other via a bus 14. An input/output (I/O) interface 15 is also connected to bus 14.

Various components in the electronic device 10 are connected to the I/O interface 15, including: an input unit 16 such as a keyboard, a mouse, etc.; an output unit 17 such as various types of displays, speakers, and the like; a storage unit 18 such as a magnetic disk, an optical disk, or the like; and a communication unit 19 such as a network card, modem, wireless communication transceiver, etc. The communication unit 19 allows the electronic device 10 to exchange information/data with other devices via a computer network, such as the internet, and/or various telecommunication networks.

The processor 11 may be a variety of general and/or special purpose processing components having processing and computing capabilities. Some examples of processor 11 include, but are not limited to, a Central Processing Unit (CPU), a Graphics Processing Unit (GPU), various specialized Artificial Intelligence (AI) computing chips, various processors running machine learning model algorithms, digital Signal Processors (DSPs), and any suitable processor, controller, microcontroller, etc. The processor 11 performs the various methods and processes described above, such as the graphical profile detection method.

In some embodiments, the graphical profile detection method may be implemented as a computer program tangibly embodied on a computer-readable storage medium, such as storage unit 18. In some embodiments, part or all of the computer program may be loaded and/or installed onto the electronic device 10 via the ROM 12 and/or the communication unit 19. When the computer program is loaded into RAM 13 and executed by processor 11, one or more steps of the graphical profile detection method described above may be performed. Alternatively, in other embodiments, the processor 11 may be configured to perform the graphical profile detection method in any other suitable way (e.g., by means of firmware).

In the context of the present invention, a computer-readable storage medium may be a tangible medium that can contain, or store a computer program for use by or in connection with an instruction execution system, apparatus, or device. The computer readable storage medium may include, but is not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any suitable combination of the foregoing. Alternatively, the computer readable storage medium may be a machine readable signal medium. More specific examples of a machine-readable storage medium would include an electrical connection based on one or more wires, a portable computer diskette, a hard disk, a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

The systems and techniques described here can be implemented in a computing system that includes a background component (e.g., as a data server), or that includes a middleware component (e.g., an application server), or that includes a front-end component (e.g., a user computer having a graphical user interface or a web browser through which a user can interact with an implementation of the systems and techniques described here), or any combination of such background, middleware, or front-end components. The components of the system can be interconnected by any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include: local Area Networks (LANs), wide Area Networks (WANs), blockchain networks, and the internet.

The computing system may include clients and servers. The client and server are typically remote from each other and typically interact through a communication network. The relationship of client and server arises by virtue of computer programs running on the respective computers and having a client-server relationship to each other. The server can be a cloud server, also called a cloud computing server or a cloud host, and is a host product in a cloud computing service system, so that the defects of high management difficulty and weak service expansibility in the traditional physical hosts and VPS service are overcome.

It should be appreciated that various forms of the flows shown above may be used to reorder, add, or delete steps. For example, the steps described in the present invention may be performed in parallel, sequentially, or in a different order, so long as the desired results of the technical solution of the present invention are achieved, and the present invention is not limited herein.

The above embodiments do not limit the scope of the present invention. It will be apparent to those skilled in the art that various modifications, combinations, sub-combinations and alternatives are possible, depending on design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the scope of the present invention.

Claims

1. A method for detecting a contour of a graphic, comprising:

according to a preset first line segment and the first vertex which is opposite to the preset first line segment, determining an initial calculation interval and a first critical dimension, wherein the method comprises the following steps:

establishing a first screening range according to the preset first line segment and the position of the preset first line segment shifted by a first distance in a first direction; the first screening range is a rectangular range taking the preset first line segment as one side;

screening the first line segment in the first screening range according to the layout figure outline and the first screening range to serve as a first opposite line segment; the opposite first line segment is parallel to the preset first line segment;

wherein the initial calculation interval corresponds to at least part of the preset first line segment; the first critical dimension is a distance between the preset first line segment and the opposite first line segment along the first direction, and the first direction is perpendicular to the extending direction of the preset first line segment;

2. The method of claim 1, wherein determining an initial calculation interval and a first critical dimension according to a preset first line segment and the first vertex, and further comprises:

3. The method of claim 2, wherein determining at least one target computation interval from at least one of the second vertices corresponding to the initial computation interval comprises:

4. The method of claim 2, wherein the calculating the second critical dimension in the target calculation interval comprises:

5. The method of claim 4, wherein calculating the second critical dimension between the locations on the two second line segments comprises:

6. The method according to claim 3 or 4, wherein defect detection is performed on the second line segment opposing to the same optical imaging profile, the first direction being a direction rotated 90 ° counterclockwise along an extending direction of the preset first line segment;

7. The method of claim 1, wherein the performing defect detection on the preset first line segment and the second line segment corresponding to the opposite first line segment in the first direction according to the first critical dimension and the second critical dimension includes:

or,

8. The pattern profile detection method according to claim 1, wherein the obtaining the layout pattern profile and the optical imaging profile includes:

obtaining a layout figure outline;

correcting the layout graph outline to obtain a graph correction outline;

9. A graphic profile detection apparatus, comprising:

the initial interval determining module is used for determining an initial calculation interval and a first key size according to a preset first line segment and the first vertex which is opposite to the preset first line segment;

the initial interval determining module includes:

the first screening range establishing unit is used for establishing a first screening range according to the preset first line segment and the position of the preset first line segment shifted to a first direction by a first distance; the first screening range is a rectangular range taking the preset first line segment as one side;

the opposite line segment screening unit is used for screening the first line segment in the first screening range according to the layout figure outline and the first screening range to serve as an opposite first line segment; the opposite first line segment is parallel to the preset first line segment;

10. A computer readable storage medium storing computer instructions for causing a processor to perform the graphical profile detection method of any one of claims 1-8.