CN117192702A - Parallel multimode photoelectric hybrid integrated assembly - Google Patents
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Abstract
The invention discloses a parallel multimode photoelectric hybrid integrated assembly, which belongs to the technical field of photoelectric digital receiving and transmitting hybrid integrated design, and adopts a double-sided cavity structural design, wherein a first cavity is arranged between a front cover plate and a base plate and is used for accommodating a photoelectric conversion unit; the bottom of the base plate is provided with a blind cavity, namely a second cavity is formed with the back cover plate and is used for accommodating the control unit; by adopting the structural design, the integration capability is improved; the size is reduced, an AlN substrate is adopted, and the heat dissipation performance of the component is ensured, so that the reliability of the component is ensured; the component can greatly reduce the thermal resistance, the volume and the weight of the system, simultaneously improve the performance and the reliability of broadband data and image transmission in the system, has very wide application prospect and market potential, and has important strategic significance and social benefit. The device has the characteristics of simple structure, rich functions, high integration level, wide working temperature range, high reliability and the like.
Description
Technical Field
The invention belongs to the technical field of photoelectric digital receiving and transmitting hybrid integrated design, and particularly relates to a parallel multimode photoelectric hybrid integrated assembly.
Background
With the rapid development of the photoelectronic technology, the technology such as photoelectric transceiving, photoelectric conversion, photoelectric imaging, photoelectric transmission and photoelectronic co-packaging is promoted to be greatly developed, the application in the fields such as communication, aviation and the like is gradually mature, and the application in the field of aerospace is gradually increased year by year. Currently, the photoelectric hybrid integration technology plays an important role in numerous leading-edge fields with outstanding advantages such as bandwidth, size, weight and power consumption, has great development potential and becomes a new hot spot for research of interdisciplinary in recent years.
As a core component of optical communication, the technical development of the optical transceiver module is also continuously mature, and gradually develops towards high-speed, intelligent and miniaturized directions. The optical transceiver module mainly completes the optical-electrical/electrical-optical conversion function of the optical signal, integrates transmitting, receiving, various functional circuits and standardized optical fiber connectors into a whole, and forms a high-speed integrated system module. However, the current photoelectric transceiver component still faces the problems of insufficient capacity, high power consumption, low integration level, large size and insufficient performance; among the many problems, the need to address is to compromise the size and reliability of the opto-electronic hybrid system.
Disclosure of Invention
In order to overcome the technical defects, the invention provides a parallel multimode photoelectric hybrid integrated assembly, which can solve the technical problem that the traditional photoelectric integrated circuit cannot be compatible with small size and reliability due to complex coupling between an optical device and an electronic device.
In order to achieve the above purpose, the present invention adopts the following technical contents:
the parallel multimode photoelectric hybrid integrated assembly comprises a shell, wherein a photoelectric conversion unit and a control unit are arranged in the shell;
the shell comprises a front cover plate, a frame and an AlN substrate which are sequentially connected from top to bottom; a blind cavity is formed in the bottom of the AlN substrate; the blind cavity is covered with a back cover plate;
the AlN substrate, the front cover plate and the frame form a cavity; the photoelectric conversion unit is arranged in the cavity;
the control unit is arranged in the blind cavity.
Further, the photoelectric conversion unit includes:
a laser for converting an input electrical signal into an optical signal;
a detector for converting an input optical signal into an electrical signal;
a driver for generating a bias current and a modulation current and transmitting the bias current and the modulation current to the laser;
the amplifier is used for shaping and amplifying the electric signal output by the detector and outputting a high-speed differential signal;
a multimode fiber array for transmitting or receiving an optical signal;
the optical chip of the laser, the optical chip of the detector, the electrical chip of the driver and the optical chip of the amplifier are all arranged on the AlN substrate;
the control unit includes: and the processor is used for sending control instructions to the driver and the amplifier, receiving feedback signals and alarm signals of the driver and the amplifier, and performing compensation setting on the driver and the amplifier.
Further, all the optical chips are coupled with the multimode fiber array by adopting a 45-degree total reflection arrangement.
Further, the tail fibers of the multimode fiber array and the shell are hermetically sealed, and the electric leading-out end of the shell is sealed by LCC.
Further, the processor is connected with the I 2 The C interface performs compensation setting on the driver and the amplifier, and receives feedback signals and alarm signals of the driver and the amplifier through the I/O interface.
Further, 4 lasers form a laser array; the laser array converts an electrical signal into an optical signal based on a bias current and a modulation current.
Further, the average light power P and bias current I of the laser array light bias And coupling efficiency eta Coupling device The specific relation is as follows:
P＝0.45×I bias ×η coupling device 。
Further, after the compensation setting of the processor, the power of the optical signal output by the laser array and the input bias current I bias And modulating the current I mod Coupling efficiency eta Coupling device The correspondence of (a) is as follows:
when at a high level, p1= (I bias +I mod /2)×0.45×η Coupling device ；
When at a low level, p0= (I bias －I mod /2)×0.45×η Coupling device ；
P1 represents a corresponding optical signal power value at a high level; p0 represents the corresponding optical signal power value at low level.
Further, 4 of the detectors constitute a detector array; the detector array receives the current I of the channel in And the input optical signal power P in And coupling efficiency eta Coupling device The specific relation is as follows:
I in ＝P in ×0.6×η coupling device 。
Further, a boss is provided on the AlN substrate.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a parallel multimode photoelectric hybrid integrated assembly, which comprises a shell, and a photoelectric conversion unit and a control unit which are arranged in the shell; the shell comprises a front cover plate, a frame and a back cover plate which are sequentially connected, the substrate is arranged between the front cover plate and the back cover plate, and the double-sided cavity structural design is adopted in the assembly in consideration of the requirements of size space, heat dissipation and reliability, and a first cavity is arranged between the front cover plate and the substrate and used for accommodating the photoelectric conversion unit; the bottom of the base plate is provided with a blind cavity, namely a second cavity is formed with the back cover plate and is used for accommodating the control unit; by adopting the structural design, the integration capability is improved; the size is reduced, an AlN substrate is adopted, and the heat dissipation performance of the component is ensured, so that the reliability of the component is ensured; the component can greatly reduce the thermal resistance, the volume and the weight of the system, simultaneously improve the performance and the reliability of broadband data and image transmission in the system, has very wide application prospect and market potential, and has important strategic significance and social benefit. The device has the characteristics of simple structure, rich functions, high integration level, wide working temperature range, high reliability and the like. The integrated photoelectric transceiver module can be widely applied to the fields of data buses, high-throughput data transmission, system interconnection and the like, and provides high-reliability multipath data link for data processing and transmission in very short distance.
Preferably, the AlN substrate is provided with the boss, so that the high-speed photoelectric signal channel component can be bonded in a short and flat way, and the high-speed photoelectric signal receiving and transmitting performance and reliability are improved.
Drawings
Fig. 1 is a schematic front view of a structure of a parallel multimode photoelectric hybrid integrated assembly according to an embodiment of the present invention;
fig. 2 is a schematic structural back view of a parallel multimode photoelectric hybrid integrated assembly according to an embodiment of the present invention;
FIG. 3 is a block diagram of a circuit structure of a parallel multimode photoelectric hybrid integrated assembly according to an embodiment of the present invention;
fig. 4 is a schematic circuit diagram of a parallel multimode photoelectric hybrid integrated assembly according to an embodiment of the present invention.
Reference numerals:
a front cover plate-1; a frame-2; an AlN substrate-3; a boss-4; a back cover plate-5; blind cavity-6; seal ring-7.
Detailed Description
In order to make the technical problems, technical schemes and beneficial effects solved by the invention more clear, the following specific embodiments are used for further describing the invention in detail. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the embodiments of the present invention, it should be noted that, if the terms "upper," "lower," "horizontal," "inner," and the like indicate an azimuth or a positional relationship based on the azimuth or the positional relationship shown in the drawings, or the azimuth or the positional relationship in which the inventive product is conventionally put in use, it is merely for convenience of describing the present invention and simplifying the description, and does not indicate or imply that the apparatus or element to be referred to must have a specific azimuth, be configured and operated in a specific azimuth, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like, are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
Furthermore, the term "horizontal" if present does not mean that the component is required to be absolutely horizontal, but may be slightly inclined. As "horizontal" merely means that its direction is more horizontal than "vertical", and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the embodiments of the present invention, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," "connected," and "connected" should be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
The invention is described in further detail below with reference to the attached drawing figures:
examples
In combination with the background technology, the current photoelectric transceiver component still faces the problems of insufficient capacity, large power consumption, low integration level, large size and insufficient performance; among the many problems, the need to address is to compromise the size and reliability of the opto-electronic hybrid system.
In order to solve the technical problems, the embodiment provides a parallel multimode photoelectric hybrid integrated assembly, and in order to achieve miniaturization and light weight of a parallel multimode optical transceiver module, the embodiment provides the parallel multimode photoelectric hybrid integrated assembly based on an AlN process, wherein the volume of the parallel multimode photoelectric hybrid integrated assembly is less than or equal to 10mm multiplied by 4mm, and an electric leading-out end is packaged by LCC; the tail fiber of the light output and the AlN shell are hermetically packaged. The AlN substrate circuit has high integration density and high heat conduction performance, and the module performance and reliability are improved. By adopting the photoelectric hybrid integrated design technology, the miniaturization and the light weight of high-speed data transmission with the capacity of 4X 10Gb/s are realized, and the photoelectric hybrid integrated design technology can work in the temperature range of-55 ℃ to 85 ℃.
The specific structure of this embodiment will be described in detail below with reference to the accompanying drawings:
the embodiment provides a parallel multimode photoelectric hybrid integrated assembly, which is required to complete the functions of converting an electric signal into an optical signal and converting the optical signal into the electric signal, and consists of a processor (namely a microcontroller), a driver, a laser, an amplifier (TIA amplifier), a detector (also called a detector) and a multimode fiber array.
Based on the mature circuit of the photoelectric transceiver module, the technology of photoelectric hybrid integrated design is adopted to realize the technology of AlN technology-based high-speed high-density design, front and back cavity opening airtight packaging design, electric leading-out end LCC packaging design, multimode fiber array and shell airtight packaging and the like, and a new solution and approach are provided for the requirements of miniaturization and light weight of the system.
As shown in fig. 1 and 2, the front surface of the AlN substrate 3 is designed with a frame 2, in order to facilitate welding, the frame 2 is a metal frame, and the front surface of the AlN substrate 3 is designed with an optical conversion unit, i.e., a transmitting and receiving high-speed signal path, an optical path channel and a multimode optical fiber array; the AlN substrate 3 adopts multilayer high-density wiring, and the high-speed signal differential line adopts a mode of combining a microstrip line and a strip line; the microstrip line is mainly designed to realize the electrical interconnection between the optical chip and the AlN substrate 3; the coupling light path of the optical chip and the multimode optical fiber array adopts a 45-degree total reflection design, and the transmitted or received optical signals are transmitted through multimode optical fibers; the sealing part of the multimode fiber array and the metal frame is provided with a local metal sealing junction.
The electric chip and the optical chip on the photoelectric receiving and transmitting channel are directly designed on the AlN substrate 3, so that the heat conduction path of the high-speed receiving and transmitting electric chip and the optical chip can be improved, the AlN substrate 3 is designed with the boss 4, the bonding time of the components of the high-speed photoelectric signal channel can be short and flat, and the high-speed photoelectric receiving and transmitting signal performance and reliability can be improved.
The back of the AlN substrate 3 is provided with a control unit of the assembly, the control unit is positioned in a blind cavity 6 of the AlN substrate 3, and in order to improve the sealing performance, a metal sealing ring 7 is arranged around the blind cavity 6 and used for sealing and welding with a back cover plate 5. The control unit is mainly realized by a processor (i.e. a microcontroller) which is used for sending control instructions to the driver and the TIA amplifier, receiving feedback and alarm signals of the driver and the TIA amplifier and compensating the settings of the driver and the TIA amplifier. The microprocessor needs to have I 2 C serial data communication function and several I/O universal interfaces, processor driver, feedback data of TIA amplifier and power supply voltage value, implementing laser driving current monitoring, detector optical power rate monitoring, working temp monitoring, signal detection and power supply electricityA pressure monitoring function; the microprocessor monitors the working temperature and according to the real-time working temperature, the microprocessor monitors the working temperature by I 2 C, compensating and setting the parameters of the driver, so as to compensate the output light power and extinction ratio; each channel can be independently opened or closed to finish the processing of detecting, compensating and the like of the received high-speed electric signals and optical signals, the data transmission rate of each channel reaches 10Gb/s, and the high-speed data transmission with the maximum capacity of 4X 10Gb/s can be realized by adopting multi-channel parallel data transmission. The micro-controller chip is directly designed in a blind cavity 6 on the back of an AlN substrate 3, and the cavity size is less than or equal to 5.5mm multiplied by 4.4mm multiplied by 0.7mm and corresponds to the front multimode optical fiber array part; the communication, detection and control of the control unit and the optical transceiver channels are interconnected through the multilayer internal wiring of the AlN substrate 3.
The optical signals are output through the multimode fiber array, the input/output interface of the optical signals can select optical adapters such as MT, MPO, FC and the like according to actual practice, and the tail fiber of the multimode fiber array, the AlN substrate 3 and the metal integrated shell are sealed by adopting a local welding process, so that airtight packaging of the tail fiber, the AlN substrate 3 and the metal integrated shell is realized; the shell adopts a parallel seam welding process. Based on an AlN process parallel multimode photoelectric transceiver circuit, the volume can be reduced to be less than or equal to 10mm multiplied by 5mm, and an LCC (liquid crystal display) package is adopted at an electric leading-out end, so that a substrate shell integrated structure is formed, as shown in fig. 1 and 2. The parallel multimode photoelectric hybrid integrated assembly realizes the airtight packaging of the parallel multimode photoelectric transceiver module with smaller volume and light weight, improves the heat dissipation capacity of the module and simultaneously improves the performance and the reliability.
As shown in FIG. 3, the parallel multimode photoelectric hybrid integrated assembly can fulfill the function of converting an electric signal into an optical signal, and a specific circuit consists of a VCSEL laser array J-VS-ST10-001, a driver S-VC4D16, a PD detector array J-PD39BG19-S, an amplifier S-VC4T17, a controller LX101 and a capacitor resistor.
The microprocessor LX101 has an I 2 C and I/O interfaces; wherein I is 2 The C interface realizes the communication function of clock and data, the I/O interface collects a series of feedback and alarm signals of the driver and the amplifier, and the communication function is realized through I 2 C configures registers of driver S-VC4D16 and amplifier S-VC4T 17.
J-VS-ST10-001 is a laser array formed by 4 independent lasers, a driver S-VC4D16 outputs bias current and setting current to drive the lasers to emit optical signals with the central wavelength of 850nm, and an emission channel emits average optical power P and bias current I of light bias And coupling efficiency eta Coupling device Proportional (p=0.45×i) bias ×η Coupling device )。
The driver S-VC4D16 has 4 independent channels, the data transmission rate of a single channel reaches 14Gb/S, the working parameters of the driver are controlled by the states of the internal related registers, the driver detects the input high-speed differential electric signals, detects whether the amplitude of the input high-speed differential electric signals meets a set threshold or not, outputs a result, compensates the attenuation of high-frequency components of the input high-speed differential electric signals in the transmission process, restores the original appearance of the signals as far as possible, and outputs a signal according to the bias current (I bias ) And modulating the current (I mod ) The register generates bias current and modulation current, the bias current and the modulation current are input into the laser array together, and the relation between the power of an optical signal output by the laser and the input current is that: p1= (I) bias +I mod /2)×0.45×η Coupling device ，P0＝(I bias -I mod /2)×0.45×η Coupling device The method comprises the steps of carrying out a first treatment on the surface of the Wherein, P1 represents a power value corresponding to a high level (i.e., when the level is 1), and P0 represents a power value corresponding to a low level (i.e., when the level is 0); thereby completing the conversion from an electrical signal to an optical signal. Temperature monitoring terminal (V) of microprocessor (controller) LX101 scan driver therm ) The operating temperature of the driver can be calculated according to the current operating temperature from I 2 And the C interface resets the bias current and the modulation current of the driver, so that the compensation of the output optical power and the extinction ratio according to temperature is realized.
J-PD39BG19-S is a detector array formed from 4 independent PDs, and is used for converting the received optical signal whose central wavelength is 850nm into current signal, receiving current I of channel in And the input optical signal power P in Proportional to I in ＝P in ×0.6×η Coupling device The amplifier S-VC4T17 amplifies, shapes and AGC amplifies the current input by the input PD, and finally outputs CML high-speed differential signals. Driver amplifier S-VC4T17 has 4 independent channelsThe data transmission rate of a single channel reaches 14Gb/s, the working parameters of the single channel are controlled by the state of an internal related register, an amplifier detects an input current signal, whether the amplitude of the input current signal meets a set threshold or not is detected, a result is output, meanwhile, an electric signal is shaped, AGC (automatic gain control) amplification is carried out, the conversion from an optical signal to the electric signal is completed, and finally a high-speed differential signal is output.
As shown in fig. 4, the specific circuit of the present assembly is as follows: driver S-VC4D16, amplifier S-VC4T17 and controller supply voltage 3.3V,4 pairs of positive and negative inputs of input and output differential signals are respectively connected to driver and amplifier differential input and output terminal A xP 、A xN (x is 1-4), driver output L xP Respectively connected with the anode and the power supply end V of the laser EE2 The input end of the amplifier is respectively connected with the anode of the PD detector microprocessor and the power supply end V EE2 Connecting a negative electrode; the I/O interface of the microcontroller is respectively connected with Notint and I of the driver and the amplifier MON 、V THERM RSSI, etc., of the microprocessor 2 The C interface is connected with SDA and SCL of the driver and the amplifier for communication. Wherein all electrical outlet port functions are as shown in table 1:
table 1 shows the function of the electric outlet port
Compared with the existing photoelectric transceiver component, the parallel multimode photoelectric hybrid integrated component provided by the embodiment has the following advantages:
(1) Based on AlN technology miniaturization high-speed high-density design technology.
(2) Based on AlN substrate double-sided cavity design technology.
(3) The high-speed data transmission with the maximum capacity of 4X 10Gb/s can be realized, the working temperature is between 55 ℃ below zero and 85 ℃, the output average optical power is more than or equal to-4 dB, the extinction ratio is more than or equal to 5dB, and the high-speed data transmission has better heat dissipation performance, so that the working reliability of the assembly is ensured.
In conclusion, the invention can greatly reduce the thermal resistance, the volume and the weight of the system, simultaneously improve the performance and the reliability of broadband data and image transmission in the system, has very wide application prospect and market potential, and has important strategic significance and social benefit. The assembly has the characteristics of simple structure, rich functions, high integration level, wide working temperature range, high reliability and the like. The integrated photoelectric transceiver module can be widely applied to the fields of data buses, high-throughput data transmission, system interconnection and the like, and provides high-reliability multipath data link for data processing and transmission in very short distance.
The above embodiment is only one of the implementation manners capable of implementing the technical solution of the present invention, and the scope of the claimed invention is not limited to the embodiment, but also includes any changes, substitutions and other implementation manners easily recognized by those skilled in the art within the technical scope of the present invention.
Claims (10)
1. The parallel multimode photoelectric hybrid integrated assembly is characterized by comprising a shell, wherein a photoelectric conversion unit and a control unit are arranged in the shell;
the shell comprises a front cover plate (1), a frame (2) and an AlN substrate (3) which are sequentially connected from top to bottom; a blind cavity (6) is formed at the bottom of the AlN substrate (3); the blind cavity (6) is covered with a back cover plate (5);
the AlN substrate (3), the front cover plate (1) and the frame (2) form a cavity; the photoelectric conversion unit is arranged in the cavity;
the control unit is arranged in the blind cavity (6).
2. The parallel multimode photoelectric hybrid integrated assembly of claim 1, wherein the photoelectric conversion unit comprises:
a laser for converting an input electrical signal into an optical signal;
a detector for converting an input optical signal into an electrical signal;
a driver for generating a bias current and a modulation current and transmitting the bias current and the modulation current to the laser;
the amplifier is used for shaping and amplifying the electric signal output by the detector and outputting a high-speed differential signal;
a multimode fiber array for transmitting or receiving an optical signal;
the optical chip of the laser, the optical chip of the detector, the electrical chip of the driver and the optical chip of the amplifier are all arranged on the AlN substrate (3);
the control unit includes: and the processor is used for sending control instructions to the driver and the amplifier, receiving feedback signals and alarm signals of the driver and the amplifier, and performing compensation setting on the driver and the amplifier.
3. A parallel multimode opto-electronic hybrid integrated package according to claim 2, wherein all optical chips are coupled to the multimode fiber array using a 45 ° total reflection arrangement.
4. The parallel multimode photoelectric hybrid integrated assembly of claim 2 wherein the pigtails of the multimode fiber array are hermetically sealed to the housing and the electrical outlets of the housing are LCC sealed.
5. A parallel multimode opto-electronic hybrid integrated package according to claim 2, wherein the processor is configured to 2 The C interface performs compensation setting on the driver and the amplifier, and receives feedback signals and alarm signals of the driver and the amplifier through the I/O interface.
6. A parallel multimode opto-electronic hybrid integrated package according to claim 2, wherein 4 of said lasers comprise a laser array; the laser array converts an electrical signal into an optical signal based on a bias current and a modulation current.
7. The parallel multimode photoelectric hybrid integrated assembly according to claim 6, wherein the average optical power P and bias current I of the laser array light emission bias And coupling efficiency eta Coupling device The specific relation is as follows:
P＝0.45×I bias ×η coupling device 。
8. The parallel multimode photoelectric hybrid integrated assembly of claim 6 wherein the laser array outputs optical signal power and input bias current I after being compensated by the processor bias And modulating the current I mod Coupling efficiency eta Coupling device The correspondence of (a) is as follows:
when at a high level, p1= (I bias +I mod /2)×0.45×η Coupling device ；
When at a low level, p0= (I bias －I mod /2)×0.45×η Coupling device ；
P1 represents a corresponding optical signal power value at a high level; p0 represents the corresponding optical signal power value at low level.
9. A parallel multimode photoelectric hybrid integrated assembly according to claim 2, wherein 4 of said detectors form a detector array; the detector array receives the current I of the channel in And the input optical signal power P in And coupling efficiency eta Coupling device The specific relation is as follows:
I in ＝P in ×0.6×η coupling device 。
10. A parallel multimode optoelectronic hybrid integrated assembly according to claim 1, characterized in that the AlN substrate (3) is provided with bosses (4).
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| CN202311155337.5A CN117192702A (en) | 2023-09-07 | 2023-09-07 | Parallel multimode photoelectric hybrid integrated assembly |
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| CN202311155337.5A CN117192702A (en) | 2023-09-07 | 2023-09-07 | Parallel multimode photoelectric hybrid integrated assembly |
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