CN117187925A - Electroplating device and semiconductor processing equipment - Google Patents
Electroplating device and semiconductor processing equipment Download PDFInfo
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- CN117187925A CN117187925A CN202311236835.2A CN202311236835A CN117187925A CN 117187925 A CN117187925 A CN 117187925A CN 202311236835 A CN202311236835 A CN 202311236835A CN 117187925 A CN117187925 A CN 117187925A
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- plating
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- electrode assembly
- electroplating
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- 238000009713 electroplating Methods 0.000 title claims abstract description 103
- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 238000012545 processing Methods 0.000 title claims abstract description 9
- 238000007747 plating Methods 0.000 claims abstract description 118
- 238000012546 transfer Methods 0.000 claims abstract description 11
- 239000007788 liquid Substances 0.000 claims description 24
- 238000004891 communication Methods 0.000 claims description 6
- 239000012530 fluid Substances 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 description 28
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 23
- 229910052802 copper Inorganic materials 0.000 description 23
- 239000010949 copper Substances 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 17
- 230000008569 process Effects 0.000 description 15
- 229910021419 crystalline silicon Inorganic materials 0.000 description 13
- 238000000151 deposition Methods 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 238000000429 assembly Methods 0.000 description 4
- 230000000712 assembly Effects 0.000 description 4
- 229910001431 copper ion Inorganic materials 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- Electroplating Methods And Accessories (AREA)
Abstract
The present disclosure relates to an electroplating apparatus and a semiconductor processing device, wherein the electroplating apparatus includes: a tank body including a plating tank configured to contain a plating solution electrically connected to the first electrode assembly and a plating stripping tank configured to contain a plating stripping solution electrically connected to the second electrode assembly; at least two rollers, at least one of which is disposed in the plating bath and at least one of which is disposed in the deplating bath, at least a portion of the at least one transfer roller being electrically connected to the plating solution and at least a portion of the at least one conductive roller being electrically connected to the deplating solution, the at least two rollers being configured to provide transfer power to the object to be plated; and a third electrode assembly electrically connected to the conductive roller, wherein a potential of the third electrode assembly is lower than a potential of the first electrode assembly and a potential of the third electrode assembly is higher than a potential of the second electrode assembly.
Description
Technical Field
The present disclosure relates to the field of semiconductor manufacturing, and more particularly, to an apparatus for exhausting gas and a cleaning device including the same.
Background
The existing solar cell adopts a silver paste printing technology, and the silver paste occupies more than 25% of the total cost of producing the solar cell, and obviously, the use of low-cost metal to replace part or even all of the silver paste has remarkable significance in reducing the production cost of the crystalline silicon solar cell.
The use of metallic copper instead of expensive silver paste is a good method. However, at high temperatures, copper ions are easily diffused into the crystalline silicon, resulting in a reduction in the minority carrier lifetime of the crystalline silicon, i.e., a reduction in the photoelectric conversion efficiency of the crystalline silicon solar cell. It is therefore desirable to be able to deposit metallic copper onto crystalline silicon solar cells under low temperature conditions, resulting in electrodes for crystalline silicon solar cells.
The method of electroless deposition of metal employed is an electroplating process. Compared with the technology of physical deposition of metal, the electroplating technology not only has the characteristic of simple technology, but also has the advantage of being capable of selectively depositing metal. Since the production cost of the electroplating process can be controlled to be low, the cost of producing the crystalline silicon solar cell can be greatly reduced. Therefore, the use of electroplating processes to deposit metal on crystalline silicon solar cells is a technology development area that is currently quite active.
However, there are the following problems in electroplating: during actual electroplating, copper ions can gather on the conductive brush in the electroplating process, so that the cleaning is difficult, and the copper electroplating quality is also affected. Furthermore, the conductive brush also causes uneven electroplating, thereby affecting the yield of the produced crystalline silicon solar cell.
Disclosure of Invention
The present disclosure aims to solve at least one of the above problems and disadvantages in the prior art, that is, at least to prevent copper concentration on a conductive brush and to improve the yield of crystalline silicon solar cells. To solve the technical problem, the technical scheme of the disclosure proposes to replace the conductive brush by using the conductive roller arranged in the stripping solution, so that the problem of copper concentration on the conductive brush can be solved, and the yield of the crystalline silicon solar cell is improved.
Specifically, the present disclosure proposes an electroplating apparatus including:
a tank body including a plating tank and a de-plating tank, wherein the plating tank is configured to contain a plating solution electrically connected to the first electrode assembly and the de-plating tank is configured to contain a de-plating solution electrically connected to the second electrode assembly;
at least two rollers, at least one of the at least two rollers being disposed in the plating bath and at least one of the at least two conductive rollers being disposed in the deplating bath, wherein at least a portion of the at least one transfer roller is electrically connected with the plating solution and at least a portion of the at least one conductive roller is electrically connected with the deplating solution, and wherein the at least two rollers are configured to provide transfer power to an object to be plated;
a third electrode assembly electrically connected with the conductive roller,
wherein the potential of the third electrode assembly is lower than the potential of the first electrode assembly and the potential of the third electrode assembly is higher than the potential of the second electrode assembly.
In the electroplating device according to the present disclosure, the electroplating device includes both an electroplating tank and a stripping tank, and the potential of the electroplating solution in the electroplating tank is highest, so that the object to be electroplated conveyed by the conveying roller of the electroplating tank can be electroplated; further, since the potential of the conductive roller provided in the plating solution is higher than that of the electrode in the plating solution, the conductive roller may be subject to plating such that the conductive roller may not accumulate copper nor burr, thereby improving the yield of the plated object such as a wafer produced according to the present disclosure.
In one embodiment according to the present disclosure, the number of the conductive rollers is at least two, and the conductive rollers are disposed at both sides of the object to be plated. In this way, double-sided plating of a plated object such as a wafer can be achieved without depositing copper on the conductive rollers on both sides, nor generating burrs, thereby improving the yield of plated objects such as wafers produced according to the present disclosure.
In one embodiment according to the present disclosure, the electroplating apparatus further comprises a power source, a first positive electrode of the power source is electrically connected to the first electrode assembly, a second positive electrode of the power source is electrically connected to the third electrode assembly, and a negative electrode of the power source is electrically connected to the second electrode assembly. In this way the required power supply can be realized in a relatively simple manner.
In one embodiment according to the present disclosure, the electroplating apparatus further comprises:
a plating solution replenishment tank in fluid communication with the plating tank; and/or
And the first circulating pump is arranged between the electroplating bath and the electroplating liquid replenishing tank.
In this way, the plating solution can be timely replenished, thereby enabling the plating to be more complete. In addition, in this way, the plating liquid can also be subjected to secondary treatment in the liquid replenishing tank, so that parameters such as purity, temperature, and the like of the plating liquid are well controlled.
In one embodiment according to the present disclosure, the electroplating apparatus further includes a first filter disposed in the liquid circuit in which the first circulation pump is located. In this way, the secondary treatment of the electroplating solution can be performed in time, so that parameters such as purity and dryness of the electroplating solution are well controlled.
In one embodiment according to the present disclosure, the electroplating apparatus further includes a plating solution replenishment tank in fluid communication with the plating solution replenishment tank. In one embodiment according to the present disclosure, the electroplating apparatus further includes a second circulation pump disposed between the deplating tank and the deplating liquid replenishing tank. In this way, the electroplating solution can be timely supplemented, so that the deplating is more sufficient. In addition, in this way, the secondary treatment of the bath can also be performed in the bath, so that parameters such as purity, temperature, etc. of the bath are well controlled.
In one embodiment according to the present disclosure, the electroplating apparatus further includes a second filter disposed in the liquid circuit in which the second circulation pump is located. In this way, the secondary treatment can be performed on the solution in time, so that parameters such as purity and dryness of the solution are well controlled.
In one embodiment according to the present disclosure, the electroplating apparatus further comprises:
a light emitting device disposed around the first electrode assembly; and/or
And a heat generating device configured to heat the plating liquid.
The function of the light-emitting device or the light source is to perform light-induced deposition, thereby further ensuring the quality of electroplating.
Further, a second aspect of the present disclosure provides a semiconductor processing apparatus comprising the electroplating device according to the first aspect of the present disclosure. The semiconductor processing device is, for example, a solar silicon wafer copper electroplating device.
In summary, the electroplating apparatus includes both an electroplating tank and a de-electroplating tank, and the electroplating solution in the electroplating tank has the highest potential, so that the object to be electroplated transported by the transporting roller of the electroplating tank can be electroplated; further, since the potential of the conductive roller provided in the plating solution is higher than that of the electrode in the plating solution, the conductive roller may be subject to plating such that the conductive roller may not accumulate copper nor burr, thereby improving the yield of the plated object such as a wafer produced according to the present disclosure.
Drawings
Features, advantages, and other aspects of embodiments of the disclosure will become more apparent upon reference to the following detailed description, taken in conjunction with the accompanying drawings, wherein several embodiments of the disclosure are shown by way of illustration, and not limitation, in which:
FIG. 1 illustrates a side view of an electroplating apparatus according to one embodiment of the present disclosure; and
FIG. 2 illustrates a side view of an electroplating apparatus according to one embodiment of the present disclosure.
Detailed Description
The technical solutions of the present disclosure are further specifically described below by way of examples and with reference to the accompanying drawings. In the specification, the same or similar reference numerals denote the same or similar components. The following description of embodiments of the present disclosure with reference to the drawings is intended to illustrate the general inventive concept of the present disclosure and should not be taken as limiting the disclosure.
The terms "comprising," including, "and similar terms used herein should be interpreted as open-ended terms, i.e., including, but not limited to," meaning that other elements may also be included. The term "based on" is based at least in part on. The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment," and so forth.
As described above, the present disclosure aims to solve at least one of the above problems and disadvantages existing in the prior art, that is, at least to prevent copper concentration on the conductive brush and to improve the yield of crystalline silicon solar cells. To solve the technical problem, the technical scheme of the disclosure proposes to replace the conductive brush by using the conductive roller arranged in the stripping solution, so that the problem of copper concentration on the conductive brush can be solved, and the yield of the crystalline silicon solar cell is improved.
In summary, the present disclosure proposes an electroplating apparatus comprising:
a tank body including a plating tank and a de-plating tank, wherein the plating tank is configured to contain a plating solution electrically connected to the first electrode assembly and the de-plating tank is configured to contain a de-plating solution electrically connected to the second electrode assembly;
at least two rollers, at least one of the at least two rollers being disposed in the plating bath and at least one of the at least two conductive rollers being disposed in the deplating bath, wherein at least a portion of the at least one transfer roller is electrically connected with the plating solution and at least a portion of the at least one conductive roller is electrically connected with the deplating solution, and wherein the at least two rollers are configured to provide transfer power to an object to be plated;
a third electrode assembly electrically connected with the conductive roller,
wherein the potential of the third electrode assembly is lower than the potential of the first electrode assembly and the potential of the third electrode assembly is higher than the potential of the second electrode assembly.
In the electroplating device according to the present disclosure, the electroplating device includes both an electroplating tank and a stripping tank, and the potential of the electroplating solution in the electroplating tank is highest, so that the object to be electroplated conveyed by the conveying roller of the electroplating tank can be electroplated; further, since the potential of the conductive roller provided in the plating solution is higher than that of the electrode in the plating solution, the conductive roller may be subject to plating such that the conductive roller may not accumulate copper nor burr, thereby improving the yield of the plated object such as a wafer produced according to the present disclosure.
The electroplating apparatus according to the present disclosure will be described below with reference to the accompanying drawings. Wherein fig. 1 shows a side view of an electroplating apparatus according to one embodiment of the present disclosure, and fig. 2 shows a side view of an electroplating apparatus according to another embodiment of the present disclosure.
As can be seen from fig. 1, the present disclosure innovates the existing copper plating process with an added conductive roller cleaning and deplating design, i.e., the present disclosure changes the existing brush layout to an innovative hairbrush-free design. Specifically, in the plating apparatus of the embodiment shown in fig. 1, the plating apparatus includes: a tank including a plating tank (a tank containing a plating solution 1) configured to contain the plating solution 1 electrically connected to the first electrode assembly 8 and a plating stripping tank (a tank containing a plating stripping solution 2) configured to contain the plating stripping solution 2 electrically connected to the second electrode assembly 13; at least two rollers, at least one transfer roller 3 of the at least two rollers being disposed in the plating bath and at least one conductive roller 4 of the at least two rollers being disposed in the deplating bath, wherein at least a portion of the at least one transfer roller 3 is electrically connected with the plating bath 1 and at least a portion of the at least one conductive roller 4 is electrically connected with the deplating bath 2, and wherein the at least two rollers are configured to provide transfer power to an object 17 to be plated; and a third electrode assembly 14, the third electrode assembly 14 being electrically connected to the conductive roller 4, wherein the third electrode assembly 14 has a potential lower than that of the first electrode assembly 8 and the third electrode assembly 14 has a potential higher than that of the second electrode assembly 13. In the electroplating device according to the present disclosure, the electroplating device includes both an electroplating tank and a stripping tank, and the potential of the electroplating solution in the electroplating tank is highest, so that the object to be electroplated conveyed by the conveying roller of the electroplating tank can be electroplated; further, since the potential of the conductive roller provided in the plating solution is higher than that of the electrode in the plating solution, the conductive roller may be subject to plating such that the conductive roller may not accumulate copper nor burr, thereby improving the yield of the plated object such as a wafer produced according to the present disclosure.
In fig. 1, reference numeral 1 is electroplating solution, reference numeral 2 is stripping solution, reference numeral 3 is a roller, reference numeral 4 is a conductive roller, and the surface of the roller is covered with a conductive coating or a conductive brush to conduct external current to the silicon wafer and the stripping solution. Reference numeral 5 is a heater which is responsible for heating the solution of the tank body, reference numeral 6 is a circulating pump, reference numeral 7 is a filter, and impurities in the solution are filtered; reference numeral 8 is an anode assembly; reference numeral 9 is an LED lamp, which provides a process function of light-induced electroplating; reference numeral 10 is a current loop; reference numeral 11 is a current loop; reference numeral 12 is a power supply; reference numeral 13 is an electrode; reference numeral 14 is a conductive roller electrode; reference numeral 15 denotes a plating solution sub-tank; reference numeral 16 is a secondary bath of plating solution; and reference numeral 17 is an object to be plated such as a silicon wafer.
In the electroplating process, the silicon wafer 17 passes through an electroplating area at a stable speed under the drive of the roller 3, the anode component 8 is connected with the positive electrode of the power supply 12, and the two groups of power supplies 12 are connected in series to form a power supply module. The two cathode assemblies 13 and 14 are connected to different cathodes of the battery of the power supply 12. When the silicon wafer 17 is moved to contact the conductive roller 4, the two cathode assemblies 13 and 14 and the anode assembly 8 form two closed loops through the plating solution 1, the silicon wafer 17, and the conductive roller 4 and the electroless plating solution 2. In the electroplating bath, copper ions move toward the silicon wafer at the negative electrode end, thereby electroplating copper onto the surface of the silicon wafer. In the plating stripping tank, the electrode 14 of the conductive roller 4 is the positive electrode opposite to the electrode 13, and current can form a closed loop with the cathode assembly 13 through the conductive roller 4 and the plating stripping solution 2 from the positive electrode of the other group of power supplies 12, so that copper on the conductive roller can be plated into the plating stripping solution and move to the cathode assembly 13. Therefore, when the silicon chip passes through the plating solution tank area, copper on the conductive roller 4 can be plated into the plating solution, and the cleaning and plating removing process is completed. A plurality of electroplating and deplating tanks are arranged in the whole tank body, and the process is repeated continuously when the silicon wafer 17 passes through the tanks, so that the processes of electroplating the silicon wafer and deplating the conductive roller are completed. In addition, reference numeral 6 is a circulating pump, and reference numeral 7 is a filter, which can make the plating solution 1 and the plating solution 2 and the liquid in the respective auxiliary tanks continuously circulate, and play roles in filtering and maintaining the temperature and the liquid concentration of the main tank.
In the electroplating apparatus according to the present disclosure, different potential differences formed by the two sets of power supply components are utilized to form different current loops as the silicon wafer passes through the electroplating region and the deplating region, thereby realizing the electroplating and deplating processes. In addition, the conductive roller 4 has an automatic plating removing function, so that an electroplating brush of the conductive roller does not need to be cleaned and replaced frequently, and maintenance and downtime are reduced. Furthermore, because the electroplating brush does not need to be replaced, the cost is greatly saved.
With the single-sided plating achieved above, to achieve double-sided plating, fig. 2 shows a side view of a plating apparatus according to one embodiment of the present disclosure. As can be seen from fig. 2, the electroplating device according to the present disclosure may comprise two conductive rollers 4.1 and 4.2, which conductive rollers 4.1 and 4.2 are arranged on both sides of the object to be electroplated, respectively, and are each electrically connected to an electrode of intermediate potential. In the electroplating process, the silicon wafer 17 passes through an electroplating area at a stable speed under the drive of the roller 3, the anode component 8 is connected with the positive electrode of the power supply 12, and the two groups of power supplies 12 are connected in series to form a power supply module. The two cathode assemblies 13 and 14 are connected to different cathodes of the battery of the power supply 12. When the silicon wafer 17 is run into contact with the 4.1 and 4.2, the two cathode assemblies 13 and 14 and the anode assembly 8 form two closed loops through the plating solution 1, the silicon wafer 17, and the conductive rollers 4.1 and 4.2 and the plating solution 2. In the electroplating bath, copper ions move toward the silicon wafer at the negative electrode end, thereby electroplating copper onto the surface of the silicon wafer. In the plating stripping tank, the electrodes 14 of the conductive rollers 4.1 and 4.2 are positive electrodes relative to the electrode 13, and current can flow from the positive electrodes of the other group of power supplies 12 to form a closed loop with the cathode assembly 13 through the conductive rollers 4.1 and 4.2 and the plating solution 2, so that copper on the conductive rollers can be stripped into the plating solution and move towards the cathode assembly 13. Therefore, when the silicon chip passes through the plating solution tank area, copper on the conductive rollers 4.1 and 4.2 can be plated into the plating solution, and the cleaning and plating removal process is completed. A plurality of electroplating and deplating tanks are arranged in the whole tank body, and the process is repeated continuously when the silicon wafer 17 passes through the tanks, so that the processes of electroplating the silicon wafer and deplating the conductive roller are completed. In addition, reference numeral 6 is a circulating pump, and reference numeral 7 is a filter, which can make the plating solution 1 and the plating solution 2 and the liquid in the respective auxiliary tanks continuously circulate, and play roles in filtering and maintaining the temperature and the liquid concentration of the main tank. In an abstract way, the number of conductive rollers 4.1 and 4.2 is at least two, the conductive rollers 4.1 and 4.2 being arranged on both sides of the object to be electroplated. In this way, double-sided plating of a plated object such as a wafer can be achieved without depositing copper on the conductive rollers on both sides, nor generating burrs, thereby improving the yield of plated objects such as wafers produced according to the present disclosure.
Optionally, in one embodiment according to the present disclosure, the electroplating apparatus further comprises a power source, a first positive electrode of the power source is electrically connected to the first electrode assembly, a second positive electrode of the power source is electrically connected to the third electrode assembly, and a negative electrode of the power source is electrically connected to the second electrode assembly. In this way the required power supply can be realized in a relatively simple manner. Preferably, in one embodiment according to the present disclosure, the electroplating apparatus further comprises: a plating solution replenishment tank in fluid communication with the plating tank; and/or a first circulation pump provided between the plating tank and the plating liquid replenishing tank. In this way, the plating solution can be timely replenished, thereby enabling the plating to be more complete. In addition, in this way, the plating liquid can also be subjected to secondary treatment in the liquid replenishing tank, so that parameters such as purity, temperature, and the like of the plating liquid are well controlled.
Further preferably, in one embodiment according to the present disclosure, the electroplating apparatus further includes a first filter disposed in a liquid circuit in which the first circulation pump is located. In this way, the secondary treatment of the electroplating solution can be performed in time, so that parameters such as purity and dryness of the electroplating solution are well controlled. More preferably, in one embodiment according to the present disclosure, the electroplating apparatus further comprises a plating solution replenishment tank in fluid communication with the plating solution tank. In one embodiment according to the present disclosure, the electroplating apparatus further includes a second circulation pump disposed between the deplating tank and the deplating liquid replenishing tank. In this way, the electroplating solution can be timely supplemented, so that the deplating is more sufficient. In addition, in this way, the secondary treatment of the bath can also be performed in the bath, so that parameters such as purity, temperature, etc. of the bath are well controlled.
In one embodiment according to the present disclosure, the electroplating apparatus further includes a second filter disposed in the liquid circuit in which the second circulation pump is located. In this way, the secondary treatment can be performed on the solution in time, so that parameters such as purity and dryness of the solution are well controlled. Preferably, in one embodiment according to the present disclosure, the electroplating apparatus further comprises: a light emitting device disposed around the first electrode assembly; and/or a heat generating device configured to heat the plating solution. The function of the light-emitting device or the light source is to perform light-induced deposition, thereby further ensuring the quality of electroplating.
Further, a second aspect of the present disclosure provides a semiconductor processing apparatus comprising the electroplating device according to the first aspect of the present disclosure. The semiconductor processing device is, for example, a solar silicon wafer copper electroplating device.
In summary, in the electroplating apparatus according to the present disclosure, the electroplating apparatus includes both an electroplating tank and a de-plating tank, and the electroplating solution in the electroplating tank has the highest potential, so that the object to be electroplated transported by the transporting roller of the electroplating tank can be electroplated; further, since the potential of the conductive roller provided in the plating solution is higher than that of the electrode in the plating solution, the conductive roller may be subject to plating such that the conductive roller may not accumulate copper nor burr, thereby improving the yield of the plated object such as a wafer produced according to the present disclosure.
The above is merely an optional embodiment of the present disclosure, and is not intended to limit the embodiments of the present disclosure, and various modifications and variations may be possible to the embodiments of the present disclosure for those skilled in the art. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the embodiments of the present disclosure are intended to be included within the scope of the embodiments of the present disclosure.
Although embodiments of the present disclosure have been described with reference to a number of specific embodiments, it should be understood that embodiments of the present disclosure are not limited to the specific embodiments disclosed. The embodiments of the disclosure are intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims. The scope of the following claims is to be accorded the broadest interpretation so as to encompass all such modifications and equivalent structures and functions.
Claims (10)
1. An electroplating apparatus, comprising:
a tank body including a plating tank and a de-plating tank, wherein the plating tank is configured to contain a plating solution electrically connected to the first electrode assembly and the de-plating tank is configured to contain a de-plating solution electrically connected to the second electrode assembly;
at least two rollers, at least one of the at least two rollers being disposed in the plating bath and at least one of the at least two conductive rollers being disposed in the deplating bath, wherein at least a portion of the at least one transfer roller is electrically connected with the plating solution and at least a portion of the at least one conductive roller is electrically connected with the deplating solution, and wherein the at least two rollers are configured to provide transfer power to an object to be plated;
a third electrode assembly electrically connected with the conductive roller,
wherein the potential of the third electrode assembly is lower than the potential of the first electrode assembly and the potential of the third electrode assembly is higher than the potential of the second electrode assembly.
2. The plating apparatus as recited in claim 1, wherein the number of said conductive rollers is at least two, said conductive rollers being disposed on both sides of the object to be plated.
3. The electroplating device of claim 1, further comprising a power source, a first positive electrode of the power source being electrically connected to the first electrode assembly, a second positive electrode of the power source being electrically connected to the third electrode assembly, and a negative electrode of the power source being electrically connected to the second electrode assembly.
4. The plating apparatus as recited in claim 1, wherein said plating apparatus further comprises:
a plating solution replenishment tank in fluid communication with the plating tank; and/or
And the first circulating pump is arranged between the electroplating bath and the electroplating liquid replenishing tank.
5. The plating apparatus as recited in claim 4, further comprising a first filter disposed in a liquid circuit in which said first circulation pump is located.
6. The electroplating device of claim 1, further comprising a plating solution replenishment tank in fluid communication with the plating solution replenishment tank.
7. The plating apparatus as recited in claim 6, further comprising a second circulation pump disposed between said deplating tank and said deplating liquid replenishing tank.
8. The plating apparatus as recited in claim 7, further comprising a second filter disposed in a liquid circuit in which said second circulation pump is located.
9. The plating apparatus as recited in claim 1, wherein said plating apparatus further comprises:
a light emitting device disposed around the first electrode assembly; and/or
And a heat generating device configured to heat the plating liquid.
10. A semiconductor processing apparatus, characterized in that the semiconductor processing apparatus comprises the plating device according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311236835.2A CN117187925A (en) | 2023-09-25 | 2023-09-25 | Electroplating device and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311236835.2A CN117187925A (en) | 2023-09-25 | 2023-09-25 | Electroplating device and semiconductor processing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117187925A true CN117187925A (en) | 2023-12-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311236835.2A Pending CN117187925A (en) | 2023-09-25 | 2023-09-25 | Electroplating device and semiconductor processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117187925A (en) |
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2023
- 2023-09-25 CN CN202311236835.2A patent/CN117187925A/en active Pending
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