CN117177593A - Transistor photodetector based on perovskite light absorption layer - Google Patents
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Abstract
The invention relates to the technical field of photoelectrons, in particular to a transistor photoelectric detector based on a perovskite light absorption layer. The transistor photoelectric detector based on the perovskite light absorption layer is divided into three systems, each system comprises a channel function layer, an electrode and the perovskite light absorption function layer on a silicon substrate with conductivity, all layers in the three systems are sequentially contacted according to different sequences, the light detection of a transistor device is realized, the problem of dimensional requirements on perovskite layer materials in the traditional perovskite transistor photoelectric detector is solved, and the perovskite material from bulk materials to low dimensions can be applied to the high-performance transistor photoelectric detector. The current of the transistor photoelectric detector of the invention shows a significant difference in the transistor off-state area under the condition of no illumination, and the stable light-dark state switching ratio is maintained in the cyclic test.
Description
Technical Field
The invention relates to the technical field of photoelectrons, in particular to a transistor photoelectric detector based on a perovskite light absorption layer.
Background
The photoelectric detector is an electronic device for converting optical signals into electric signals, detecting and measuring optical properties through photoelectric effect, capturing optical signals in a specific wavelength range, immediately converting the optical signals into electric signals, usually representing photocurrent, calculating corresponding information of detected light waves through current, playing an irreplaceable role in the technical fields of optical communication, automatic control, biochemical sensing, photoelectric sensing and detection, optical imaging, mapping detection, environmental monitoring, biochemical medical treatment and the like, and has great significance in developing the photoelectric detector with excellent performance.
At present, photodetectors are mainly classified into four major categories, namely organic material detectors, inorganic material detectors, quantum dot material detectors and perovskite material detectors. Although the technologies of the first three types of detectors are mature, the problems of complex manufacturing process, high cost, high driving voltage and the like are solved, and the wider application and technical innovation of the detectors are limited. The perovskite material has the characteristics of high charge carrier mobility, high light absorption coefficient, solution preparation, low manufacturing cost and the like, and has great prospect in the application of a photodetector.
The traditional transistor photoelectric detector based on perovskite is basically composed of a conductive substrate with a dielectric layer with a certain thickness, a perovskite layer and an electrode, wherein the perovskite layer is used as a light absorption layer and a carrier transmission layer, and to realize the transistor photoelectric detector with high performance, the perovskite layer has to have excellent light absorption characteristics and carrier transmission characteristics, the light absorption characteristics of the perovskite are not influenced by the dimensions of the perovskite, but the carrier transmission characteristics with high mobility are easy to realize only in the bulk materials of the perovskite, and the selection of the perovskite materials in the dimensions is greatly limited.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention aims to provide the transistor photoelectric detector based on the perovskite light absorption layer, solves the problem of dimensional requirements of the traditional perovskite transistor photoelectric detector on perovskite layer materials, and ensures that perovskite materials from bulk materials (polycrystalline thin films) to low dimensions (two-dimensional nano sheets, one-dimensional nano wires, zero-dimensional quantum dots and the like) can be applied to high-performance transistor photoelectric detectors.
In order to solve the technical problems, the technical scheme provided by the invention is as follows:
transistor photodetectors based on perovskite light absorbing layers,
the transistor photoelectric detector system comprises a conductive substrate (1), a channel functional layer (2), an electrode (3) and a perovskite light absorption functional layer (4);
the conduction band bottom of the material of the channel functional layer (2) is lower than the conduction band bottom energy level of the material of the perovskite light absorption functional layer (4); or the valence band top of the material of the channel functional layer (2) is higher than the valence band top energy of the material of the perovskite light absorption functional layer (4).
Preferably, the contact sequence of the conductive substrate (1), the channel functional layer (2), the electrode (3) and the perovskite light absorption functional layer (4) of the transistor photoelectric detector system I is the conductive substrate (1), the channel functional layer (2), the electrode (3) and the perovskite light absorption functional layer (4) in sequence.
Preferably, the contact sequence of the conductive substrate (1), the channel functional layer (2), the electrode (3) and the perovskite light absorption functional layer (4) of the transistor photoelectric detector system II is the conductive substrate (1), the channel functional layer (2), the perovskite light absorption functional layer (4) and the electrode (3) in sequence.
Preferably, the contact sequence of the conductive substrate (1), the channel functional layer (2), the electrode (3) and the perovskite light absorption functional layer (4) of the transistor photoelectric detector system III is the conductive substrate (1), the electrode (3), the channel functional layer (2) and the perovskite light absorption functional layer (4) in sequence.
Preferably, the conductive substrate (1) of the transistor photodetector system has a dielectric layer thereon.
Preferably, the material of the conductive substrate (1) is a material having conductive properties.
Preferably, the material of the channel function layer (2) is an organic or inorganic semiconductor material.
Preferably, the electrode layer (3) is a material having conductive properties.
Preferably, the material of the perovskite light absorption functional layer (4) is a light absorption material with a perovskite lattice structure.
The beneficial effects of the invention are as follows:
the transistor photoelectric detector based on the perovskite light absorption layer can realize the light detection of a transistor device, solves the problem of dimensional requirements of the traditional perovskite transistor photoelectric detector on perovskite layer materials, and ensures that all perovskite materials from bulk materials to low-dimensional materials can be suitable for high-performance transistor photoelectric detectors.
The device exhibits a significant difference in current in the transistor off-state region in the presence of no light, wherein the photo-dark current ratio of the phototransistor device under System 1 can be up to 10 at maximum 4 The sample device maintains a stable light-dark on-off ratio during cycling testing.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate the invention and together with the embodiments of the invention, serve to explain the invention. In the drawings:
FIG. 1 is a schematic diagram of a transistor photodetector system according to the present invention
FIG. 2 is a schematic diagram of a transistor photodetector system according to the present invention
FIG. 3 is a schematic diagram of a three-structure transistor photodetector system according to the present invention
FIG. 4 is a schematic diagram of the energy level relationship between the perovskite layer and the channel transport layer according to the present invention
FIG. 5 is a graph showing the transition of a transistor photodetector of the present invention in the 390nm and dark states
FIG. 6 is a graph showing the source-drain current variation of a transistor photodetector according to the present invention under 390nm light pulse
Detailed Description
The following description of preferred embodiments of the present invention is provided in connection with the accompanying drawings, and it is to be understood that the preferred embodiments described herein are for the purpose of illustration and explanation only and are not intended to limit the invention thereto.
The invention provides a transistor photoelectric detector which is prepared on a silicon substrate with conductivity and is divided into three systems, wherein all layers in the three systems are sequentially contacted. Each system comprises a conductive substrate (1) with a dielectric layer with a certain thickness, a channel function layer (2), an electrode (3) and a perovskite light absorption function layer (4). Wherein the conduction band bottom (or LUMO) of the channel function layer material is lower than the conduction band bottom energy level of the perovskite layer material, or the valence band top (or HOMO) of the channel function layer material is higher than the valence band top energy level of the perovskite layer material, the energy level diagram is shown in fig. 4. HOMO is the highest occupied molecular orbital of Highest occupied Molecular Orbital; LUMO is the lowest unoccupied orbital of Lowest Unoccupied Molecular Orbital molecules.
The channel functional layer (2) is prepared by adopting a spin coating, sputtering or evaporation method; the electrode layer (3) is prepared by adopting a sputtering or evaporation method; the perovskite light absorption functional layer (4) is prepared by adopting methods of spin coating, knife coating, spraying, thermal evaporation, ink-jet printing and the like.
As shown in fig. 1, the first system is composed of a conductive substrate (1) with a dielectric layer with a certain thickness, a channel function layer (2), an electrode (3) and a perovskite light absorption function layer (4) in sequence.
As shown in fig. 2, the second system is composed of a conductive substrate (1) with a dielectric layer with a certain thickness, a channel function layer (2), a perovskite light absorption function layer (4) and an electrode (3) in sequence.
As shown in fig. 3, the third system is composed of a conductive substrate (1) with a dielectric layer with a certain thickness, an electrode (3), a channel function layer (2) and a perovskite light absorption function layer (4) in sequence.
The conductive base (1) adopted by the three systems is a substrate material with conductivity and a dielectric layer with a certain thickness. The material of the conductive substrate (1) comprises, but is not limited to, heavily doped silicon, and the dielectric layer with a certain thickness comprises, but is not limited to, siO 2 、Al 2 O 3 、HfO 2 PMMA, PS, etc. The channel function layer (2) is a material having semiconductor characteristics; the material is an organic or inorganic semiconductor material, including but not limited to zinc oxide (ZnO), zinc Tin Oxide (ZTO), pentacene (Pentacene) and the like. The electrode layer (3) is a material having good conductive properties, including but not limited to aluminum, gold, silver, lithium, calcium, magnesium, and the like. The perovskite light absorption functional layer (4) is a material with light absorption characteristics; the material is a material with perovskite lattice structure (or similar lattice structure) and comprises but is not limited to MAPbI 3 Two-dimensional PEA 2 PbI 4 、CsPbBr 3 Quantum dots, and the like.
The device can realize the optical detection of the transistor device.
As shown in fig. 5, a graph of the transition of the transistor photodetector of the present invention under 390nm light and dark state, that is, a graph of the change of the source-drain current (Y-axis) with the gate voltage (X-axis), can be seen that the source-drain current in the off-state region under light is significantly increased compared with that in the dark state, which indicates that the transistor photodetector of the present invention has excellent light response.
As shown in fig. 6, a graph of the change of the source-drain current of the transistor photodetector according to the present invention under 390nm light pulse, that is, a graph of the change of the source-drain current (Y-axis) versus time (X-axis) under light pulse irradiation, can be seen that the current circulates between the high state and the low state and maintains a stable photo-dark current ratio under light pulse irradiation, which indicates that the transistor photodetector according to the present invention has stable and recyclable photo-detection capability.
The current of the transistor photoelectric detector in the transistor off-state area shows a remarkable difference under the condition of no illumination, wherein the light-dark current ratio of the light transistor device of the first system can reach 10 at maximum 4 . Meanwhile, the device is subjected to cyclic test of 'light state dark state' by applying a periodical light pulse signal, the cyclic light response capability of the device is checked, and the sample device maintains stable light dark state switching ratio in the cyclic test.
What is not described in detail in this specification is prior art known to those skilled in the art.
Finally, it should be noted that: the foregoing is merely a preferred example of the present invention, and the present invention is not limited thereto, but it is to be understood that modifications and equivalents of some of the technical features described in the foregoing embodiments may be made by those skilled in the art, although the present invention has been described in detail with reference to the foregoing embodiments. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. A transistor photodetector based on a perovskite light absorbing layer, characterized in that,
the transistor photoelectric detector system comprises a conductive substrate (1), a channel functional layer (2), an electrode (3) and a perovskite light absorption functional layer (4);
the conduction band bottom of the material of the channel functional layer (2) is lower than the conduction band bottom energy level of the material of the perovskite light absorption functional layer (4); or the valence band top of the material of the channel functional layer (2) is higher than the valence band top energy of the material of the perovskite light absorption functional layer (4).
2. A perovskite light absorbing layer-based transistor photodetector as defined in claim 1, wherein,
the contact sequence of the conductive substrate (1), the channel functional layer (2), the electrode (3) and the perovskite light absorption functional layer (4) of the transistor photoelectric detector system I is sequentially the conductive substrate (1), the channel functional layer (2), the electrode (3) and the perovskite light absorption functional layer (4).
3. A perovskite light absorbing layer-based transistor photodetector as defined in claim 1, wherein,
the contact sequence of the conductive substrate (1), the channel functional layer (2), the electrode (3) and the perovskite light absorption functional layer (4) of the transistor photoelectric detector system II is sequentially the conductive substrate (1), the channel functional layer (2), the perovskite light absorption functional layer (4) and the electrode (3).
4. A perovskite light absorbing layer-based transistor photodetector as defined in claim 1, wherein,
the contact sequence of the conductive substrate (1), the channel functional layer (2), the electrode (3) and the perovskite light absorption functional layer (4) of the transistor photoelectric detector system III is sequentially the conductive substrate (1), the electrode (3), the channel functional layer (2) and the perovskite light absorption functional layer (4).
5. A perovskite light absorbing layer-based transistor photodetector as defined in claim 1, wherein,
the conductive substrate (1) of the transistor photodetector system is provided with a dielectric layer.
6. A perovskite light absorbing layer-based transistor photodetector as defined in claim 1, wherein,
the material of the conductive substrate (1) is a material with conductive properties.
7. A transistor photodetector based on a light absorbing layer of titanium ore according to claim 1, wherein,
the material of the channel function layer (2) is an organic or inorganic semiconductor material.
8. A transistor photodetector based on a light absorbing layer of titanium ore according to claim 1, wherein,
the electrode layer (3) is a material having conductive properties.
9. A transistor photodetector based on a light absorbing layer of titanium ore according to claim 1, wherein,
the perovskite light absorption functional layer (4) is made of a light absorption material with a perovskite lattice structure.
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| CN202311006649.XA CN117177593A (en) | 2023-08-10 | 2023-08-10 | Transistor photodetector based on perovskite light absorption layer |
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| CN202311006649.XA CN117177593A (en) | 2023-08-10 | 2023-08-10 | Transistor photodetector based on perovskite light absorption layer |
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