CN115148843B - Wide-spectrum response infrared detector based on asymmetric potential barrier energy band structure - Google Patents
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- 230000004044 response Effects 0.000 title claims abstract description 32
- 238000001228 spectrum Methods 0.000 title claims abstract description 15
- 238000005036 potential barrier Methods 0.000 title description 3
- 239000000463 material Substances 0.000 claims abstract description 168
- 230000004888 barrier function Effects 0.000 claims abstract description 58
- 239000010409 thin film Substances 0.000 claims abstract description 52
- 238000010521 absorption reaction Methods 0.000 claims abstract description 43
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 230000001105 regulatory effect Effects 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000009413 insulation Methods 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052582 BN Inorganic materials 0.000 claims description 14
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 14
- 230000033228 biological regulation Effects 0.000 claims description 14
- 229910021389 graphene Inorganic materials 0.000 claims description 13
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- 239000012212 insulator Substances 0.000 claims description 12
- CTNCAPKYOBYQCX-UHFFFAOYSA-N [P].[As] Chemical compound [P].[As] CTNCAPKYOBYQCX-UHFFFAOYSA-N 0.000 claims description 11
- 229910052723 transition metal Inorganic materials 0.000 claims description 10
- -1 transition metal chalcogenide Chemical class 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 230000005684 electric field Effects 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- UGFMBZYKVQSQFX-UHFFFAOYSA-N para-methoxy-n-methylamphetamine Chemical compound CNC(C)CC1=CC=C(OC)C=C1 UGFMBZYKVQSQFX-UHFFFAOYSA-N 0.000 claims description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 5
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 230000005291 magnetic effect Effects 0.000 claims description 4
- 229910016001 MoSe Inorganic materials 0.000 claims description 2
- 239000006096 absorbing agent Substances 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 19
- 230000010287 polarization Effects 0.000 abstract description 6
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 230000005294 ferromagnetic effect Effects 0.000 abstract description 2
- 238000003384 imaging method Methods 0.000 abstract description 2
- 230000004298 light response Effects 0.000 abstract description 2
- 239000000696 magnetic material Substances 0.000 abstract description 2
- 238000012360 testing method Methods 0.000 abstract description 2
- 230000007704 transition Effects 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 230000031700 light absorption Effects 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000011895 specific detection Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Abstract
A wide-spectrum response infrared detector based on an asymmetric barrier energy band structure is an ultra-low dark current vertical van der Waals heterojunction wide-spectrum response infrared detector, and the structure is as follows: the substrate insulation layer (1), the bottom surface reflection electrode layer (3), the n-type two-dimensional layered semiconductor thin film layer, namely the absorption layer (5), the regulating layer (7) is a band gap adjustable two-dimensional thin film material layer, namely the barrier layer (6), the wide band gap two-dimensional thin film material layer, namely the contact layer (8) is an n-type two-dimensional layered material, and the conductivity type of the contact layer is the same as that of the absorption layer; a top gate electrode layer (9) and a top electrode layer (4); the top electrode layer is arranged on one side or a circle of the contact layer above the heterojunction; the top gate electrode layer is disposed directly over the heterojunction barrier layer. By changing the wavelength and power of the irradiation light, the detection sensitivity of different wave bands is obtained. Changing the light polarization mode below the ferromagnetic transition temperature of the magnetic material to test polarization sensitive light response and photocurrent imaging to observe infrared light detection performance.
Description
Technical Field
The invention relates to a low dark current two-dimensional layered material heterojunction photoelectron technology, in particular to an n-b-g-n, p-b-g-p broad-spectrum response infrared detector based on an asymmetric barrier energy band structure, and particularly relates to an n-b-g-n, p-b-g-p ultra-low dark current vertical van der Waals heterojunction high-switching-ratio broad-spectrum response infrared detector based on an asymmetric barrier energy band structure.
Background
At present, the new generation infrared detection technology is developed towards large area array, double-color multicolor, digitalization, high frame frequency, hyperspectral, single photon detection and the like. The new generation of high performance infrared detector can realize the rapid detection and identification of military targets, and has advantages in particular to the real-time high resolution detection and identification of ultra-high speed and high radar stealth targets. The reduction of dark current of the device is one of important research directions, and the detection, tracking and identification capabilities of the infrared system on targets are determined. The magnitude of dark current is an important index of the performance of the infrared detector, is a key of the excellent performance of the device, and has a critical influence on the calculation of the detection rate of the subsequent detector. When the dark current is too large, the light responsivity of the detector can be influenced to a certain extent. The single side barrier structure is often used to block the passage of multiple words to reduce dark current. Under the background, the appearance of a novel heterostructure brings new hopes for the development of a new generation of infrared photoelectric detection technology.
Disclosure of Invention
The embodiment of the invention provides an n-b-g-n, p-b-g-p structure vertical van der Waals heterojunction ultra-low dark current wide spectrum response infrared detector based on an asymmetric barrier energy band structure, which reduces the volume of the detector through a heterostructure and realizes room temperature, broadband and high-sensitivity detector. And is an n-b-g-n, p-b-g-p wide spectrum response infrared detector with adjustable band gap based on an asymmetric barrier energy band structure.
In order to achieve the purpose, the technical scheme of the invention is that the n-b-g-n, p-b-g-p wide spectrum response infrared detector based on an asymmetric potential barrier energy band structure comprises a substrate, wherein the substrate is provided with a structure from bottom to top:
the substrate insulation layer 1 comprises a flexible insulation substrate of silicon dioxide, aluminum oxide, PMMA, PI and the like;
a bottom reflective electrode layer 3, (the reflective electrode layer is disposed on the insulating substrate layer);
an n-type two-dimensional layered semiconductor thin film layer, i.e., an absorption layer 5, comprising MoS 2 、MoSe 2 、WS 2 、WSe 2 The transition metal chalcogenides are stacked at the position right above the bottom surface reflecting electrode;
the regulating layer 7 is a band gap adjustable two-dimensional film material layer, the band gap can realize continuous regulation and control of the band gap of the material by externally applying an electric field and a magnetic field or changing the components of the two-dimensional film material, and the regulating layer 7 is positioned on the absorption layer 5;
a wide band gap type two-dimensional thin film material layer, namely a barrier layer 6, and an intrinsic semiconductor or insulator with a larger band gap, comprising boron nitride, alumina and the like as the barrier layer; the barrier layer comprises boron nitride, aluminum oxide and the like as barrier layers, and the barrier layers are arranged between an n-type two-dimensional layered material (contact layer) and a band gap adjustable two-dimensional thin film material layer, namely a regulating layer 7;
an n-type two-dimensional layered material (contact layer) 8 of the same conductivity type as the material of the absorption layer, e.g. MoS 2 、WS 2 An n-type layered semiconductor material of the intrinsic or doped transition metal chalcogenide;
when the material of the contact layer 8 is a p-type two-dimensional layered material, the absorption layer 5 should also be a p-type two-dimensional layered material, and the barrier layer 6 is still a wide-bandgap two-dimensional thin film material, including intrinsic semiconductors or insulators with larger bandgaps, such as boron nitride and aluminum oxide; a band gap adjustable two-dimensional thin film material layer (regulating layer) 7, which is still a two-dimensional layered material with band gap capable of realizing continuous regulation, such as graphene, black phosphorus-arsenic and the like, and the stacking sequence is kept unchanged;
a top gate electrode layer 9 and a top electrode layer 4; the top electrode layer is arranged on one side or a circle of the contact layer 8 (n-type/p-type two-dimensional layered material) above the heterojunction; the top gate electrode layer 9 is disposed directly above the heterojunction barrier layer.
A wide band gap type two-dimensional thin film material layer (barrier layer) 6, an intrinsic semiconductor or insulator with a larger band gap, such as boron nitride, alumina and the like, is used as a barrier layer, and the barrier layer is arranged between the n-type two-dimensional layered material (contact layer 8) and the band gap adjustable two-dimensional thin film material layer, namely a regulating layer 7.
Wherein n-b-g-n refers to: n-type two-dimensional layered material layer (contact layer) -barrier layer (barrier layer) -graph layer (band gap regulating layer) -n-type two-dimensional layered material layer (absorption layer); p-b-g-p means: p-type two-dimensional layered material layer (contact layer) -barrier layer (barrier layer) -Graphene layer (band gap adjusting layer) -p-type two-dimensional layered material layer (absorption layer). The ultra-low dark current vertical van der Waals heterojunction high-switching-ratio wide-spectrum response infrared detector is based on n-b-g-n and p-b-g-p of an asymmetric energy band structure.
The band gap of the regulating layer 7 (band gap adjustable two-dimensional film material layer) can be continuously regulated and controlled by an external electric field and a magnetic field or by changing the components of the two-dimensional material. A two-dimensional layered material such as graphene, black phosphorus-arsenic, etc., which is located between the barrier layer 6 and the absorption layer 5; an n-type two-dimensional layered material (absorption layer) 5 of the same conductivity type as the layered material of the contact layer 8, e.g. MoS 2 、WS 2 An absorption layer is arranged on the bottom layer, is contacted with the bottom surface reflection electrode, and a contact layer is arranged on the top layer. When the material of the contact layer 8 is a p-type two-dimensional layered material, the absorption layer 5 is also a p-type two-dimensional layered material, and the barrier layer 6 is still a wide-bandgap two-dimensional thin film material, i.e. an intrinsic semiconductor or insulator with a larger bandgap, such as boron nitride, aluminum oxide, etc.; the band gap-adjustable two-dimensional thin film material layer (regulating layer) 5 is still a two-dimensional layered material with the band gap of the material capable of realizing continuous regulation, such as graphene, black phosphorus-arsenic and the like, and the stacking sequence is kept unchanged. A p-type two-dimensional layered thin film material thin film layer (absorption layer 5) is arranged at the position right above the bottom surface reflection electrode; placing a band gap adjustable two-dimensional film material layer, namely a regulating layer 7, above the absorption layer 5; a wide band gap two-dimensional thin film material barrier layer 6, i.e. an intrinsic semiconductor or insulator with a larger band gap such as boron nitride, aluminum oxide, etc. is placed over the regulation layer, and finally a contact layer 8 is placed over the barrier layer 6.
The heterojunction is directly arranged on a high light reflection metal electrode layer, adopts a metal bottom electrode as a reflection mirror surface to enhance infrared light absorption and rapid photocurrent collection, and comprises an n-type two-dimensional layered material (contact layer), a wide forbidden band type two-dimensional thin film material layer (barrier layer), a band gap adjustable two-dimensional thin film material layer (regulation layer) and an n-type two-dimensional layered material (absorption layer); when the material of the contact layer is a p-type two-dimensional layered material, the two-dimensional material layer arranged on the high-light reflection gold electrode comprises a p-type two-dimensional layered material (contact layer), a wide-forbidden-band two-dimensional thin film material layer (barrier layer), a band-gap adjustable two-dimensional thin film material layer (regulation layer) and a p-type two-dimensional layered material (absorption layer), wherein a heterojunction region is arranged on the bottom electrode reflection surface metal.
The band gap-adjustable two-dimensional thin film material layer (regulating layer) is still a two-dimensional layered material with the band gap capable of realizing continuous regulation, such as graphene, black phosphorus-arsenic and the like, and the stacking sequence is kept unchanged. The heterojunction is arranged on a high light reflection metal electrode layer, a metal bottom electrode is adopted as a reflection mirror surface to enhance infrared light absorption and rapid photocurrent collection, and the heterojunction comprises an n-type two-dimensional layered material (contact layer), a wide forbidden band type two-dimensional thin film material layer (barrier layer), a band gap adjustable two-dimensional thin film material layer (regulation layer) and an n-type two-dimensional layered material (absorption layer); when the material of the contact layer is a p-type two-dimensional layered material, the two-dimensional material layer arranged on the high-light reflection gold electrode comprises a p-type two-dimensional layered material (contact layer), a wide-forbidden-band two-dimensional thin film material layer (barrier layer), a band-gap adjustable two-dimensional thin film material layer (regulation layer) and a p-type two-dimensional layered material (absorption layer), wherein a heterojunction region is arranged on the bottom electrode reflection surface metal.
The heterojunction device is arranged on an insulating substrate, or a silicon dioxide substrate or a flexible insulating substrate.
The top gate electrode layer is arranged right above a wide band gap type semiconductor (such as a semiconductor material or an insulator with larger band gap like boron nitride), namely right above the barrier layer; the top electrode layer is connected with the negative electrode of the voltage source and grounded, and the positive electrode of the voltage source is connected with the bottom electrode layer through an ammeter; the top gate electrode and the metal electrode are connected to the positive electrode and the negative electrode of the gate voltage, and the negative electrode is grounded. In the photoelectric detection process, the heterojunction tests the current when the detector is turned on and turned off under the condition of bias voltage and zero polarization voltage to obtain the response of the change of the conductance, wherein the bottom surface reflection metal electrode layer under the heterojunction region improves the light absorption of the material by reflecting the incident light so as to improve the response sensitivity. By changing the wavelength and power of the irradiation light, the detection sensitivity of different wave bands is obtained. The polarization sensitive photoresponse is tested below the ferromagnetic transition temperature of the magnetic material by changing the light polarization mode, and the object can be subjected to photocurrent imaging to observe the uncooled infrared light detection performance.
The vertical van der Waals heterojunction infrared light detector and the related heterojunction electronic device can form an atomic-level thickness heterojunction, and compared with a traditional light detector, the vertical van der Waals heterojunction infrared light detector has smaller dark current, smaller volume and high on-off ratio and specific detection efficiency, and the n-b-g-n and p-b-g-p van der Waals vertical heterojunction with lower dark current can be realized by adjusting the band gap of a two-dimensional material. The reflection type mirror structure enhances the light absorption and photocurrent collection efficiency, so that the obtained p-n heterojunction detector has higher external quantum efficiency.
The vertical van der Waals heterojunction infrared light detector and the related heterojunction electronic device can form an atomic-level thickness heterojunction, and compared with a traditional light detector, the vertical van der Waals heterojunction infrared light detector has smaller dark current, smaller volume and high on-off ratio and specific detection efficiency, and the n-b-g-n and p-b-g-p van der Waals vertical heterojunction with lower dark current can be realized by adjusting the band gap of a two-dimensional material. The reflection type mirror structure enhances the light absorption and photocurrent collection efficiency, so that the obtained p-n heterojunction detector has higher external quantum efficiency.
The ultra-low dark current vertical van der Waals heterojunction high-switching-ratio wide-spectrum response infrared detector based on the asymmetric energy band structure has the beneficial effects that the ultra-low dark current vertical van der Waals heterojunction high-switching-ratio wide-spectrum response infrared detector based on the asymmetric energy band structure is different from a traditional infrared detector. Firstly, the n-type/p-type two-dimensional layered thin film material thin film layer, the barrier layer and the band gap adjustable two-dimensional thin film layer (regulating layer) in the detector are easy to obtain in preparation raw materials, simple in process, low in preparation cost and capable of effectively controlling the cost in practical application. Secondly, the detector of the invention uses a two-dimensional thin film material heterojunction as a photosensitive element, and the heterojunction detector has small size and great application advantage in high integration, unlike the traditional light detection element. Third, the bottom surface reflective electrode layer of the present invention can effectively improve light absorption and collection photocurrent efficiency to improve response sensitivity. Fourth, the ultra-low dark current vertical van der Waals heterostructure based on the asymmetric energy band structure of the present invention can achieve ultra-low dark current. Finally, the two-dimensional layered film material heterojunction can effectively inhibit dark current to realize high signal-to-noise ratio and weak light detection. Meanwhile, the anisotropy of the most important material can realize polarization sensitive light detection, and the detector can detect infrared rays or even long-wave infrared rays under the uncooled condition, so that the detector can be widely applied.
Drawings
FIG. 1 is a diagram of an ultra-low dark current vertical van der Waals heterojunction high-switching-ratio broad-spectrum response infrared detector device based on an n-b-g-n, p-b-g-p structure of an asymmetric energy band structure;
FIG. 2 is a diagram of an ultra-low dark current vertical van der Waals heterojunction high-switching-ratio broad-spectrum response infrared detector device structure based on an n-b-g-n, p-b-g-p structure of an asymmetric energy band structure in an embodiment of the invention; the material of the contact layer 8 is an n-type two-dimensional layered material.
FIG. 3 is a diagram of an ultra-low dark current vertical van der Waals heterojunction high-switching-ratio broad-spectrum response infrared detector device structure based on an n-b-g-n, p-b-g-p structure of an asymmetric energy band structure in an embodiment of the invention. The material of the contact layer 8 is a p-type two-dimensional layered material.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
An ultra-low dark current vertical van der Waals heterojunction high-switch-ratio broad-spectrum response uncooled infrared detector based on an n-b-g-n, p-b-g-p structure of an asymmetric barrier energy band structure comprises an n-type two-dimensional layered material (contact layer) 8, wherein the n-type two-dimensional layered semiconductor material film layer comprises MoS 2 The equal transition metal chalcogenide is stacked on an intrinsic semiconductor or insulating layer with larger band gap and defined number of layersI.e., directly above the barrier layer; a wide band gap type two-dimensional thin film material layer (barrier layer) 6, an intrinsic semiconductor or insulator having a large band gap such as boron nitride, aluminum oxide, or the like as a barrier layer; the material layers are stacked right above a regulating layer 7 which is a material layer with adjustable band gaps and comprises a certain number of layers, such as graphene or black arsenic-phosphorus, and the band gaps of the material layers are adjustable, a two-dimensional thin film material layer (regulating layer) 7 with adjustable band gaps can realize continuous regulation and control on the band gaps of the material by externally applying an electric field and a magnetic field or changing the components of the two-dimensional material, such as graphene, black phosphorus-arsenic and the like, and the material layers are stacked right above an n-type two-dimensional layered material which comprises a certain number of layers, namely an absorption layer 5; an n-type two-dimensional layered material (absorption layer) 5 of the same conductivity type as the contact layer layered material, e.g. MoS 2 、WS 2 An n-type layered semiconductor material of intrinsic or doped transition metal chalcogenide is disposed directly above the bottom reflective electrode.
When the material of the contact layer 8 is a p-type two-dimensional layered material, and the material comprises two-dimensional layered materials such as black phosphorus, transition metal chalcogenide and the like, the absorption layer 5 should also be a p-type two-dimensional layered material, and the barrier layer 6 is still a wide-bandgap two-dimensional thin film material, i.e. an intrinsic semiconductor or insulator with a larger bandgap such as boron nitride, aluminum oxide and the like; the band gap-adjustable two-dimensional thin film material layer (regulating layer) 7 is still a two-dimensional layered material with a material band gap capable of realizing continuous regulation, such as graphene, black phosphorus, black arsenic phosphorus, topological semi-metal and the like, and the stacking sequence is kept unchanged.
In an embodiment, the n-type semiconductor two-dimensional layered thin film material (absorption layer, contact layer) is MoS 2 、WS 2 An n-type layered semiconductor material of the intrinsic or doped transition metal chalcogenide.
In an embodiment, the p-type semiconductor two-dimensional layered thin film material (absorption layer, contact layer) is a two-dimensional layered material such as black phosphorus, transition metal chalcogenide, and the like.
In an embodiment, the barrier layer is an intrinsic layered semiconductor or insulator with a larger band gap.
In an embodiment, a bottom reflective electrode layer is included and located directly under the heterojunction region;
in an embodiment, the substrate insulating layer is a flexible insulating substrate such as silicon dioxide, aluminum oxide, PMMA, PI and the like.
In an embodiment, the thickness of the insulating substrate layer is 300 nanometers.
In an embodiment, the top electrode layer is comprised of 5 nm thick titanium and 50 nm thick gold.
In an embodiment, the bottom reflective electrode layer is comprised of 5 nm thick titanium and 50 nm thick gold.
In an embodiment, the top gate electrode layer is comprised of 5 nm thick titanium and 50 nm thick gold.
In an embodiment, the top gate electrode layer has a width of 2 μm.
The heterojunction photoelectric detector comprises:
the substrate insulation layer is flexible insulation of silicon dioxide, aluminum oxide, PMMA, PI and the like;
the metal electrode layer comprises a top electrode layer and a bottom surface reflecting electrode layer, wherein the top electrode layer is arranged on one side or a circle of the upper side of the n-type two-dimensional layered thin film material (contact layer), the top gate electrode layer is arranged right above the barrier layer (barrier layer), and the bottom surface reflecting electrode layer is arranged right below the n-type two-dimensional layered thin film material semiconductor layer (absorption layer);
when the material of the contact layer is a p-type two-dimensional layered material, the metal electrode layer comprises a top electrode layer and a bottom surface reflecting electrode layer, wherein the top electrode layer is arranged on one side or a circle of the p-type two-dimensional layered thin film material (the contact layer), the top gate electrode layer is arranged right above the barrier layer (the barrier layer), and the bottom surface reflecting electrode layer is arranged right below the p-type two-dimensional layered thin film material semiconductor layer (the absorbing layer);
an n-type two-dimensional layered thin film material thin film layer (absorption layer) is arranged at the position right above the bottom surface reflection electrode; a band gap adjustable two-dimensional film material layer (regulating layer) such as graphene, black phosphorus-arsenic and other two-dimensional layered materials is arranged above the absorption layer; placing a barrier layer (an intrinsic semiconductor or an insulating layer with larger band gap such as boron nitride) above the regulating layer; an n-type two-dimensional layered thin film material thin film layer (contact layer) is disposed over the tape barrier layer.
A p-type two-dimensional layered thin film material thin film layer (absorption layer) is arranged at the position right above the bottom surface reflection electrode; a band gap adjustable two-dimensional film material layer (regulating layer) such as graphene, black phosphorus-arsenic and other two-dimensional layered materials is arranged above the absorption layer; placing a barrier layer (an intrinsic semiconductor or an insulating layer with larger band gap such as boron nitride) above the regulating layer; the method comprises the steps of carrying out a first treatment on the surface of the A thin film layer (contact layer) of p-type two-dimensional layered thin film material is disposed over the tape barrier layer.
As shown in fig. 1, a more specific embodiment of the present invention provides a structure diagram of an ultra-low dark current vertical van der waals heterojunction high-on-off ratio wide-spectrum response infrared detector device based on an n-b-g-n, p-b-g-p structure of an asymmetric barrier energy band structure, wherein the heterojunction photoelectric detector comprises: the substrate insulation layer 1, the bottom surface reflection electrode layer 3, the top electrode layer 4, the two-dimensional lamellar material film contact layer (n-type/p-type two-dimensional lamellar film material film layer) 8, the barrier layer 6, the band gap continuously adjustable two-dimensional lamellar material film layer 7, the two-dimensional lamellar material film absorption layer (n-type/p-type two-dimensional lamellar film material film layer) 5, the top gate electrode layer 9 and the basal layer 2.
The bottom surface reflecting electrode layer 3 is arranged on the substrate insulating layer 1, the two-dimensional lamellar material film absorption layer (n-type/p-type two-dimensional lamellar film material film layer) 5, the barrier layer 6, the band gap continuously adjustable two-dimensional lamellar material film layer 7 and the two-dimensional lamellar material film contact layer (n-type/p-type two-dimensional lamellar film material film layer) 8 are partially overlapped and then are arranged on the bottom surface reflecting electrode layer. The top electrode layer is arranged on the side surface or the periphery of the two-dimensional lamellar material film contact layer 8 (n-type/p-type two-dimensional lamellar material film layer), and the top gate electrode layer 9 is arranged right above the barrier layer 6.
In the embodiment, a heterojunction region formed by a two-dimensional lamellar material film absorption layer (n-type/p-type two-dimensional lamellar material film layer) 5, a barrier layer 6, a band gap continuously adjustable two-dimensional lamellar material film layer 7 and a two-dimensional lamellar material film contact layer (n-type/p-type two-dimensional lamellar material film layer) 8 is positioned right above the bottom surface reflection electrode layer 3.
In an embodiment, bottom reflective electrode layer 3, top electrode layer 4 and top gate electrode layer 9 are comprised of 5 nm thick titanium and 50 nm thick gold.
In an embodiment, the top gate electrode layer 9 has a width of 2 μm.
The heterojunction detector further comprises: a substrate 2, the substrate 2 is disposed under the insulating layer 1, and the substrate 2 may be an insulating material such as silicon, and the present invention will be described by taking silicon as an example.
In the heterojunction detector, the barrier layer also comprises an intrinsic semiconductor or an insulating layer with a larger band gap, and the invention is only illustrated by taking boron nitride as an example.
The heterojunction detector comprises a two-dimensional layered material layer with a band gap continuously adjustable, and a two-dimensional layered material layer with band gaps of other materials capable of realizing continuous regulation, such as graphene, black phosphorus-arsenic and the like, and the invention is illustrated by taking graphene as an example only: the bottom surface reflecting electrode layer, the two-dimensional layered thin film material thin film heterojunction layer and the top gate electrode layers 3, 5-7-6-8 and 9 are core parts of the heterojunction detector, and under the action of the bottom surface reflecting electrode layer, higher photocurrent is obtained through the two-dimensional material heterojunction region. And the built-in electric field formed by the semiconductor junction effectively inhibits dark current, so that the device has higher on-off ratio and higher light response at room temperature in a short wave or even infrared long wave band.
The substrate insulating layer 2 in the ultra-low dark current vertical van der Waals heterojunction wide spectrum response infrared detector based on the n-b-g-n and p-b-g-p structures of the asymmetric energy band structures can be an insulating material and a dielectric material, and the insulating material is a flexible insulating substrate such as silicon dioxide, aluminum oxide, PMMA, PI and the like.
The heterojunction manufacturing process comprises the following steps: in the case where a silicon oxide layer is used as an insulating layer and silicon is used as a base, the silicon oxide layer and the silicon base are collectively referred to as a silicon oxide wafer. And writing a bottom surface reflecting electrode and a top electrode layer on the silicon oxide wafer in advance according to a planned pattern. In the specific manufacturing process, a piece of silicon oxide wafer with electrodes written is taken, a silicon layer is arranged below the silicon oxide wafer, and a 300-nanometer silicon dioxide layer is arranged above the silicon oxide wafer. And stacking an absorption layer (n-type semiconductor/p-type semiconductor) on the silicon oxide wafer by using a van der Waals heterojunction transfer method for the prepared target sample, ensuring coverage to the bottom surface reflecting electrode layer, stacking a target regulating layer sample on the target absorption layer, stacking a barrier layer sample and a contact layer sample on the target regulating layer sample layer which is already stacked on the target absorption layer in sequence, and ensuring that a heterojunction region formed by the four layers of semiconductors is positioned right above the bottom surface reflecting electrode layer. The heterojunction is thus formed on the 300 nm silicon oxide silicon wafer described above. Thus completing the fabrication of the device.
The ultra-low dark current vertical van der Waals heterojunction high-switching-ratio wide-spectrum detection uncooled infrared detector based on the n-b-n structure is different from the traditional photoelectric detector. First, the ultra-low dark current vertical van der Waals heterojunction based on the asymmetric energy band structure of the present invention can be made very small and highly integrated as compared with the conventional light detection unit as a light-sensitive unit. And secondly, the bottom surface reflecting electrode layer adopted by the invention can effectively improve photocurrent and response sensitivity through reflection of incident light. Thirdly, the length of the built-in electric field depletion region of the heterojunction of the two-dimensional layered film material layer is small, the field intensity of the built-in electric field is large, the light absorption of the two-dimensional layered film material is strong, and the light absorption difference of the bulk material is large. Fourth, the heterostructure can achieve ultra-low dark current detection, and is the basis for achieving high switching ratio. Finally, the heterojunction can realize uncooled broadband detection. The principles and embodiments of the present invention have been described in detail with reference to specific examples, which are provided to facilitate understanding of the method and core ideas of the present invention; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present invention, the present description should not be construed as limiting the present invention in view of the above.
Claims (9)
1. The wide-spectrum response infrared detector based on the asymmetric barrier energy band structure is an ultra-low dark current vertical van der Waals heterojunction wide-spectrum response infrared detector, and is characterized in that a structure from bottom to top is arranged on a substrate:
a substrate insulation layer (1) which comprises a flexible insulation substrate of silicon dioxide, aluminum oxide, PMMA and PI;
a bottom surface reflection electrode layer (3) disposed on the substrate insulation layer;
the absorption layer (5), the absorption layer (5) is n-type two-dimensional lamellar or p-type two-dimensional lamellar semiconductor film material; the n-type two-dimensional layered semiconductor film layer comprises MoS 2 、MoSe 2 、WS 2 、WSe 2 A transition metal chalcogenide stacked at a position right above the bottom surface reflection electrode;
the regulating layer (7) is a band gap adjustable two-dimensional thin film material layer, the band gap can be continuously regulated and controlled by an external electric field and a magnetic field or by changing the components of the two-dimensional thin film material, and the regulating layer (7) is positioned above the absorption layer; comprises graphene and black phosphorus-arsenic, wherein the stacking sequence is kept unchanged;
the wide band gap type two-dimensional film material layer is a barrier layer (6), and the barrier layer (6) is an intrinsic semiconductor or insulator with a large band gap and comprises boron nitride and aluminum oxide as barrier layers; the barrier layer is arranged between the contact layer (8) and the band gap adjustable two-dimensional thin film material layer, namely the regulating layer (7);
the contact layer (8), the contact layer (8) is n-type two-dimensional lamellar material or p-type two-dimensional lamellar material, the conductivity type is the same as that of the absorption layer, namely the absorption layer is also n-type two-dimensional lamellar material or p-type two-dimensional lamellar material;
when the material of the contact layer (8) is a p-type two-dimensional layered material, the absorption layer (5) is also a p-type two-dimensional layered material, the barrier layer is still a wide-band gap two-dimensional thin film material, and the material comprises an intrinsic semiconductor or insulator with a large band gap, and the intrinsic semiconductor or insulator with a large band gap is boron nitride or aluminum oxide;
a top gate electrode layer (9) and a top electrode layer (4); the top electrode layer is arranged on one side or a circle of the contact layer above the heterojunction; the top gate electrode layer is disposed directly over the heterojunction barrier layer.
2. The broad spectrum response of claim 1The infrared detector is characterized in that the n-type two-dimensional layered material contact layer and the n-type two-dimensional layered material absorption layer are two-dimensional layered materials with the same conductivity type; comprising WS 2 、MoS 2 Transition metal chalcogenides.
3. The broad spectrum response infrared detector as recited in claim 1, wherein the contact layer and the absorber layer are of the same conductivity type, either electron type conductivity or hole type conductivity; when the material of the contact layer is a p-type two-dimensional layered material, the absorption layer is also a p-type two-dimensional layered material, and the absorption layer is two-dimensional layered materials with the same conductivity type and comprises black phosphorus and transition metal chalcogenide.
4. The broad spectrum response infrared detector as recited in any one of claims 1-2, wherein the modulating layer is stacked over an absorbing layer comprising a defined number of n-type two-dimensional layered material/p-type two-dimensional layered material layers.
5. A broad spectrum response infrared detector as claimed in any one of claims 1 to 2, wherein a bottom reflective electrode layer is provided and is located directly below the heterojunction region.
6. The broad spectrum response infrared detector as recited in any one of claims 1-2, wherein said top gate electrode has a thickness of 20-50 nm.
7. The broad spectrum response infrared detector as recited in any one of claims 1-2, wherein the insulating substrate layer has a thickness of 300 nm.
8. The broad spectrum response infrared detector as recited in any one of claims 1-2, wherein said top electrode layer is comprised of 5 nm thick titanium and 50 nm thick gold; the bottom surface reflecting electrode layer consists of titanium with the thickness of 5 nanometers and gold with the thickness of 50 nanometers; the width of the top gate electrode layer is 2 mu m, and the top gate electrode layer consists of titanium with the thickness of 5 nanometers and gold with the thickness of 50 nanometers.
9. The broad spectrum response infrared detector as recited in any one of claims 1 to 2, wherein continuous regulation of the bandgap of the material is achieved by applying a gate voltage to the top gate electrode for regulation or by using a bandgap tunable material with continuously varying composition.
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