CN218896644U - Thallium nickel selenium photoelectric detector - Google Patents
Thallium nickel selenium photoelectric detector Download PDFInfo
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- CN218896644U CN218896644U CN202222843801.7U CN202222843801U CN218896644U CN 218896644 U CN218896644 U CN 218896644U CN 202222843801 U CN202222843801 U CN 202222843801U CN 218896644 U CN218896644 U CN 218896644U
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Abstract
The utility model discloses a thallium nickel selenium photoelectric detector, which is arranged from bottom to top: the device comprises an electric insulation substrate, thallium nickel selenium nano-sheets, a source electrode layer and a drain electrode layer, wherein the source electrode layer and the drain electrode layer are arranged on two sides of the upper end of the thallium nickel selenium nano-sheets, the thallium nickel selenium nano-sheets are used as photosensitive elements, the source electrode layer and the drain electrode layer are connected with corresponding lead electrodes and are used for being connected with an external test circuit, the electric insulation substrate comprises an intrinsic high-resistance silicon substrate and a silicon dioxide layer covered on the intrinsic high-resistance silicon substrate, the thallium nickel selenium nano-sheets are mechanically stripped monomolecular layers, and the source electrode and the drain electrode are metal composite electrodes. The thallium nickel selenium photoelectric detector is based on thallium nickel selenium nanosheets, and has the advantages of high response rate, visible medium-wave infrared broad spectrum photoelectric detection, high air stability, high integration level, mature process, repeatability and the like.
Description
Technical Field
The utility model relates to a photoelectric detector, in particular to a thallium nickel selenium photoelectric detector.
Background
In the prior art, various existing semiconductor photoelectric detection devices can only be used for single-band photoelectric detection due to the limitation of the band gap width of the semiconductor photoelectric detection devices, and generally have the problem and the defect of narrow response range, such as ultraviolet band, visible band, near infrared band and middle infrared band, so that the application range of the devices is reduced. In recent years, the development of a photoelectric detection device with broadband response is widely focused by a plurality of researchers at home and abroad, mainly because: through response analysis and comparison of light in different wave bands, signal interference of external conditions can be effectively avoided, and the accuracy of light signal transmission and receiving of the device is greatly improved.
With the gradual expansion of the application range of photodetectors, the demand for high-performance photodetectors, particularly ultra-wideband photodetectors that cover multi-band responses, is increasing. To date, photodetectors based on materials such as silicon, mercury cadmium telluride, and indium gallium arsenide have taken up a major market in practical applications. However, these compounds are toxic, difficult to synthesize, and limited by the low operating temperatures. And the lattice mismatch between these conventional semiconductors and substrates further hinders their use in portable, integrable, and flexible devices.
In recent years, two-dimensional semiconductor materials having a lamellar structure have become an alternative or complement to conventional semiconductor materials. Photodetectors based on two-dimensional materials have rapidly evolved due to their atomically thin thickness, continuously tunable band gap, excellent mechanical and optoelectronic properties. The two-dimensional layered material can be used for designing a flexible photoelectric nano device in the whole electromagnetic spectrum, is widely applied to photoelectric detectors, and has great breakthroughs in the aspects of performance, response rate and the like. However, the two-dimensional material-based detector has problems of large band gap, weak light absorption, short carrier lifetime, etc., so that the ultra-wideband photoactive material with high response, stability and narrow band gap is urgently needed to realize a wide-band, low-power-consumption and high-performance detector.
Thallium nickel selenium is one of the ternary chalcogenides of interest in recent years, but its research is surprisingly small. Thallium nickel selenium is a layered compound superimposed by weak van der waals interactions and shows a direct band gap structure of a narrow band gap of 0.36eV in bulk. Unlike transition metal dihalides, thallium nickel selenium does not undergo a transition from a direct bandgap structure to an indirect bandgap structure when extended to a monolayer, maintaining the direct bandgap characteristics. This property gives thallium-nickel-selenium a high carrier density and good light absorption efficiency, and is a promising candidate for electronic and optoelectronic devices. However, the two-dimensional material of the thin layer exhibits very inefficient photon capture, which hinders the application of high performance optoelectronic devices, especially devices that are difficult to achieve with high response and low energy consumption.
Disclosure of Invention
In order to solve the problems in the prior art, the utility model aims to provide a thallium nickel selenium photoelectric detector.
For this purpose, the above object of the present utility model is achieved by the following technical solutions:
a thallium nickel selenium photodetector, characterized by: the detector is provided with from bottom to top: the electric insulation substrate, the thallium nickel selenium nano-sheet, the source electrode layer and the drain electrode layer are arranged on two sides of the upper end of the thallium nickel selenium nano-sheet, the thallium nickel selenium nano-sheet is used as a photosensitive conductive channel, the source electrode layer and the drain electrode layer are connected with corresponding lead electrodes for connecting an external test circuit,
the electric insulating base comprises an intrinsic high-resistance silicon substrate and a silicon dioxide layer covered on the intrinsic high-resistance silicon substrate, wherein the resistivity of the intrinsic high-resistance silicon substrate is 10000 Ω cm, and the thickness of the intrinsic high-resistance silicon substrate is 300 mu m; the silicon dioxide layer is covered on the intrinsic high-resistance silicon substrate, the thickness is 300nm,
the thallium nickel selenium nanosheet is a mechanically stripped monolayer with the thickness of 10nm,
the source electrode and the drain electrode are metal composite electrodes, which are manufactured by ultraviolet lithography technology and electron beam evaporation technology, the lower metal is chromium which is used as an adhesion layer, the thickness is 5nm, the upper metal is gold, the thickness is 70nm,
the thickness of the lead electrode is 200-400 nm.
The utility model can also adopt or combine the following technical proposal when adopting the technical proposal:
as a preferable technical scheme of the utility model: the whole size of the source electrode and the drain electrode is 220 μm×140 μm.
Compared with the prior art, the thallium nickel selenium photoelectric detector provided by the utility model uses the thallium nickel selenium material with high carrier mobility and adjustable energy band as a photosensitive conductive channel, when the thallium nickel selenium sheet is reduced to a monomolecular layer, the thallium nickel selenium sheet can not be converted from a direct band gap structure to an indirect band gap structure, the direct band gap characteristic of 0.36eV is maintained, and the thallium nickel selenium symmetrical structure device can realize rapid broadband detection from visible light to medium wave infrared at room temperature; the device performance is improved by utilizing the remarkable photovoltaic effect of the contact part of the metal and the thallium nickel selenium nanosheet.
Drawings
FIG. 1 is a schematic front side view of a thallium nickel selenium photodetector of the utility model;
FIG. 2 is a graph of response waveforms of the thallium nickel selenium photodetector of the present utility model at a bias voltage of 1V for visible light 638nm, near infrared 1550nm, and mid-wave infrared 4600 nm;
FIG. 3 is a graph showing a symmetric photocurrent distribution of a comparative thallium nickel selenium photodetector of the present utility model generated when a laser light at 638nm scans a two-dimensional photosurface in the absence of any bias voltage;
FIG. 4 is a graph of the response of a thallium nickel selenium photodetector of the utility model at near infrared 1550 nm.
In the drawing, a silicon dioxide layer 1, thallium nickel selenium nano-sheets 2, an intrinsic high-resistance silicon substrate 3, source and drain chromium electrodes 4, source and drain gold electrodes 5 and a lead electrode 6.
Detailed Description
The following detailed description of the utility model refers to the accompanying drawings and examples, which are included to provide a convenient understanding and appreciation of the inventive concepts.
Referring to fig. 1-4, a thallium nickel selenium photoelectric detector of the utility model is characterized in that a silicon dioxide layer 2 is arranged on an intrinsic high-resistance silicon substrate 3, thallium nickel selenium nano-sheets 1 are arranged on the silicon dioxide layer 2, metal source and drain electrodes are arranged at two ends of the thallium nickel selenium nano-sheets 1, each metal source and drain electrode comprises a source chromium electrode 4, a drain chromium electrode 4 and a source gold electrode 5, and finally, the source electrode and the drain electrode are connected with a corresponding lead electrode 6 for connecting a circuit.
The intrinsic high-resistance silicon substrate 3 is intrinsic high-resistance silicon, the resistivity of the intrinsic high-resistance silicon substrate is 10000 Ω & cm, and the thickness of the intrinsic high-resistance silicon substrate is 300 mu m; overlying it is a layer of silicon dioxide 2, 300nm thick;
the thallium nickel selenium nanosheet 1 is a thin layer material and has a thickness of 10nm;
the whole size of the source electrode and the drain electrode is 220 mu m multiplied by 140 mu m, the lower metal is a source electrode and a drain electrode 4, the thickness of the lower metal is 5nm, the thickness of the upper metal is a source electrode and a drain electrode 5, and the thickness of the upper metal is 70nm; the thickness of the corresponding lead electrode 6 is 200-400 nm;
the thallium nickel selenium photoelectric detector is manufactured by the following technical scheme.
(1) Firstly, carrying out ultrasonic surface cleaning on a silicon substrate covered with silicon dioxide by using acetone, isopropanol, ethanol and deionized water, and cutting the substrate into 1cm multiplied by 1cm samples by a precision cutting technology;
(2) Mechanically stripping the deposited and grown thallium nickel selenium by using a blue adhesive tape through a micro-area positioning method of a transfer platform, transferring the thallium nickel selenium onto the substrate by using a dry transfer technology, and numbering, positioning and marking;
(3) Uniformly coating by using a hot plate baking and a photoresist homogenizing machine to uniformly attach the photoresist AZ5214 on the substrate and the thallium nickel selenium material;
(4) The source electrode and the drain electrode which are contacted with thallium nickel selenium are prepared by combining ultraviolet lithography, an electron beam evaporation method and a traditional stripping process, so that good contact is formed;
(5) Finally, the device is attached to the PCB base by adopting a standard semiconductor packaging technology, and the lead is simply packaged to complete the preparation of the detection device with the composite structure.
The utility model relates to a thallium nickel selenium photoelectric detector, which is a detection device of a semi-metal thallium nickel selenium material composite structure with broadband photoelectric response, and is designed by taking the midpoint of an electrode channel as the center of a thallium nickel selenium material symmetrical structure. The thallium nickel selenium photoelectric detector disclosed by the utility model has the advantages of high response rate, visible medium-wave infrared photoelectric detection, air stability, high integration level, mature process, repeatability and the like by utilizing the thallium nickel selenium nanosheet photoelectric detector, has an application prospect in the fields of communication, photoelectrons and the like, and lays a device and theoretical foundation for realizing broadband and multifunctional photoelectric detection research at room temperature.
The specific preparation and test procedures are as follows:
firstly, carrying out ultrasonic surface cleaning on a silicon substrate covered with silicon dioxide by using acetone, isopropanol, ethanol and deionized water, and carrying out precision cutting on a sample with the substrate depth of 1cm multiplied by 1 cm;
and 3, transferring the obtained thallium nickel selenium nano-sheet, and characterizing the physical properties of thallium nickel selenium by utilizing a Raman spectrum. The microscopic morphology of thallium nickel selenium samples was characterized using Atomic Force Microscopy (AFM), scanning Electron Microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS).
and 6, finally, attaching the device to a PCB base by adopting a standard semiconductor packaging technology, leading wires, and simply packaging to complete the preparation of the detection device with the integrated composite structure.
The thallium nickel selenium photoelectric detector has the advantages that the composite structure can relieve the defects of a thin layer two-dimensional material, and has the advantages of simple preparation, large photocurrent and the like.
Example 1
As shown in FIG. 1, in the detector with broadband photoelectric response, the silicon dioxide of the covering dielectric layer is 300nm, and the thickness of the lower silicon substrate is 300 mu m; the thickness of the thallium nickel selenium nano-sheet is about 10nm, and the overall dimensions of the source electrode layer and the drain electrode layer are as follows: 220 μm long and 140 μm wide with a channel length of 6 μm; the thickness of the source and drain composite electrode is 75nm, the thickness of the corresponding lead electrode 6 is 200-400 nm, and the source and drain electrode is connected with the corresponding lead electrode 6 for connecting a circuit; firstly, the photoelectric response of the device is tested in the wavelength ranges of 638nm visible light, 1550nm near infrared light and 4600nm medium-wave infrared light, and fig. 2 is a waveform diagram of a thallium nickel selenium symmetrical structure photoelectric detector measured when the bias voltage is 1V, and the result shows that the thallium nickel selenium photoelectric detector provided by the utility model can realize wide-spectrum high-sensitivity detection in the range from visible light to medium-wave infrared light.
Fig. 3 shows a detector with pure material thallium nickel selenium symmetrical structure, and photocurrent generated when laser scans symmetrical devices shows obvious mirror symmetry, light response current approaches to regions on two sides of the material of thallium nickel selenium, amplitude and region have only weak difference, and polarity directions of the light response current of the two regions have obvious opposite directions.
As shown in FIG. 4, the response rate of the detection device of comparative example 1 at near infrared 1550nm can be seen to be about 0.2mA/W under the condition of 1V from the thallium nickel selenium photoelectric detector, and the response rate of the device is higher.
According to the thallium nickel selenium photoelectric detector, various parameters such as photocurrent and response rate in a device are changed within a certain range, and the thallium nickel selenium material with high carrier mobility and adjustable energy band is used as a photosensitive conductive channel, so that the rapid broadband detection from visible light to medium-wave infrared is realized at room temperature. The utility model has the advantages that the photoelectric detector based on the thallium nickel selenium nanosheet has high response rate, visible medium wave infrared broadband photoelectric detection, high air stability, high integration level, mature process, repeatability and the like. The thallium nickel selenium photoelectric detector has potential application prospect in the fields of electronics and photoelectrons, and lays a device and theoretical foundation for realizing high-sensitivity and multifunctional photoelectric detection research at room temperature.
Claims (2)
1. A thallium nickel selenium photodetector, characterized by: the detector is arranged from bottom to top: the electric insulation substrate, the thallium nickel selenium nano-sheet, the source electrode layer and the drain electrode layer are arranged on two sides of the upper end of the thallium nickel selenium nano-sheet, the thallium nickel selenium nano-sheet is used as a photosensitive element, the source electrode layer and the drain electrode layer are connected with corresponding lead electrodes for connecting an external test circuit,
the electric insulating base comprises an intrinsic high-resistance silicon substrate and a silicon dioxide layer covered on the intrinsic high-resistance silicon substrate, wherein the resistivity of the intrinsic high-resistance silicon substrate is 10000 Ω cm, and the thickness of the intrinsic high-resistance silicon substrate is 300 mu m; the silicon dioxide layer is covered on the intrinsic high-resistance silicon substrate, the thickness is 300nm,
the thallium nickel selenium nanosheet is a mechanically stripped monolayer with the thickness of 10nm,
the source electrode and the drain electrode are metal composite electrodes, the lower metal is chromium which is used as an adhesion layer, the thickness is 5nm, the upper metal is gold, the thickness is 70nm,
the thickness of the lead electrode is 200-400 nm.
2. A thallium nickel selenium photodetector as in claim 1, wherein: the whole size of the source electrode and the drain electrode is 220 μm×140 μm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202222843801.7U CN218896644U (en) | 2022-10-25 | 2022-10-25 | Thallium nickel selenium photoelectric detector |
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| CN202222843801.7U CN218896644U (en) | 2022-10-25 | 2022-10-25 | Thallium nickel selenium photoelectric detector |
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| CN218896644U true CN218896644U (en) | 2023-04-21 |
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| CN202222843801.7U Active CN218896644U (en) | 2022-10-25 | 2022-10-25 | Thallium nickel selenium photoelectric detector |
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