CN113363344A - Room-temperature dual-channel adjustable terahertz detector and preparation method thereof - Google Patents
Room-temperature dual-channel adjustable terahertz detector and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a terahertz detector with an adjustable two channels at room temperature, which comprises a silicon substrate covered with silicon oxide, a one-dimensional indium arsenide nanowire which is grown by molecular beam epitaxy is transferred on the silicon substrate covered with the silicon oxide, a source drain electrode and a corresponding lead electrode are prepared in the extending direction of the one-dimensional indium arsenide nanowire, an aluminum oxide gate dielectric layer is grown on a conductive channel of the one-dimensional indium arsenide nanowire, a discrete gate electrode is respectively interconnected with two arms of a log-periodic antenna, a two-dimensional graphene conductive channel is transferred in the distance between the discrete gate electrode and the two arms of the log-periodic antenna, and the two-dimensional graphene conductive channel completely covers the outer part of the discrete gate electrode. The terahertz detection device adopts dual channels, has high response and can be regulated and controlled in multiple dimensions; the integration level, the process maturity and the repeatability of the device lay the device and the theoretical foundation for realizing the room temperature, integration, multi-channel and adjustable terahertz detection research.
Description
Technical Field
The invention relates to a terahertz wave detector, in particular to a terahertz wave detector with adjustable two channels at room temperature and a preparation method thereof, which can realize detection of two channels, high response and multi-dimensional adjustment and control on terahertz wave bands.
Background
With the rapid development of the information age, micro devices operating in the low-energy photon frequency band (0.1-10 THz, terahertz gap) range become important information carriers for the construction of new-generation wireless communication, smart cities and security systems. The traditional photoelectric device depends on the development of a narrow-band-gap semiconductor or energy band engineering (metal, semiconductor and insulator), has the trend of performance index reduction in a low-energy photon frequency band, needs a deep low temperature to suppress noise to obtain enough sensitivity, and faces the problem of intrinsic limit. The specific transport or photoelectron characteristics are constructed by adopting microscopic atomic scale control, the bottleneck brought by the traditional energy band detection mode depending on single particle excitation is hopefully broken through, and the terahertz detector with room-temperature work, high sensitivity, wide frequency band, low noise and high integration is realized. Therefore, the development of materials for researching terahertz detectors is shifted from traditional materials to various novel materials with excellent properties, such as graphene materials with high carrier mobility and other low-dimensional materials.
The graphene material has a unique physical structure, and special electrical and optical characteristics, so that a good platform is provided for terahertz detection research. Researches show that graphene can convert signals with the frequencies into electrical signals with the frequencies being thousands of times higher, the mechanism of the effect can be caused by efficient nonlinear interaction between light and substances occurring in the graphene, when a large number of free electrons in the graphene are excited by an oscillating electric field at room temperature, the free electrons and other bound electrons in the material share energy rapidly, the electrons boil like heated fluid, the liquid state of the electrons in the graphene is changed into the steam state within ten billion seconds, the conversion can cause rapid increase of the conductivity of the material, and terahertz broad-spectrum and high-speed detection can be realized. Indium arsenide is an important III-V group narrow bandgap semiconductor, has the characteristics of high electron mobility, small effective mass, strong spin-orbit coupling and the like, is an ideal material for preparing high-speed low-power consumption electronic devices, infrared optoelectronic devices and spin-electron devices, and meanwhile, indium arsenide nanowires are widely applied to radio frequency electronic devices, ballistic transport devices and the like due to the characteristics of unique surface charge accumulation layers, Fermi level pinning effects, easiness in ohmic contact formation and the like. At present, most of researches mainly focus on the visible-infrared photoelectric characteristics of indium arsenide nanowires, and researches on the indium arsenide nanowires as terahertz detectors are rarely reported.
Dyakonov and Shur illustrate that plasma waves in a field effect tube are excited in a channel to realize terahertz wave detection, and the channel of the device has a direct current voltage drop to generate light response under the excitation of terahertz radiation; meanwhile, the nonlinear effect enables the device to effectively multiply the frequency of incident terahertz waves to generate high-order harmonics, and the terahertz radiation detection theory is verified by multiple experiments. Through the combination of the two-dimensional graphene and the one-dimensional indium arsenide nanowire, the terahertz field effect transistor has a unique physical structure and a special photoelectric characteristic, and provides a good platform for the research of the photoelectric function conversion characteristic of the novel terahertz field effect transistor.
Based on the technical scheme, the invention designs the terahertz detector with the adjustable and controllable room temperature dual channels and the preparation method thereof so as to solve the problems.
Disclosure of Invention
The invention aims to provide a terahertz detector with adjustable room temperature and two channels and a preparation method thereof, and provides a field effect transistor which is constructed by taking a two-dimensional graphene conductive channel with high mobility and adjustable carrier concentration and a one-dimensional indium arsenide nanowire as basic structural units and is provided with a group of terahertz wave coupling antennas for interconnecting discrete gate electrodes and source and drain electrodes. A terahertz wave detector with a two-dimensional graphene conducting channel/log-periodic antenna interconnected discrete gate electrode/aluminum oxide gate dielectric layer/one-dimensional indium arsenide nanowire/silicon substrate structure covered with silicon oxide at room temperature can achieve terahertz detection which is dual-channel, high in response and capable of being adjusted and controlled in multiple dimensions.
In order to achieve the purpose, the invention provides the following technical scheme: a terahertz detector with an adjustable two channels at room temperature comprises a silicon substrate covered with silicon oxide, a one-dimensional indium arsenide nanowire which is grown by molecular beam epitaxy is transferred on the silicon substrate covered with the silicon oxide, source and drain electrodes and corresponding lead electrodes are prepared in the extending direction of the one-dimensional indium arsenide nanowire, an aluminum oxide gate dielectric layer grows on a conducting channel of the one-dimensional indium arsenide nanowire, a discrete gate electrode is respectively interconnected with two arms of a log-periodic antenna, a two-dimensional graphene conducting channel is transferred in the distance between the discrete gate electrode and the two arms of the log-periodic antenna, and the two-dimensional graphene conducting channel completely covers the outer portion of the discrete gate electrode.
Preferably, in the terahertz detector with the adjustable and controllable two channels at room temperature, the thickness of the silicon substrate covered with the silicon oxide is 0.5-1 mm; the length of the one-dimensional indium arsenide nanowire is 6-12.5 mu m, and the diameter of the one-dimensional indium arsenide nanowire is 100-120 nm; the thickness of the source electrode and the drain electrode is 50-100 nm, and the thickness of the corresponding lead electrode is 200-400 nm; the thickness of the aluminum oxide gate dielectric layer is 30-50 nm.
Preferably, in the terahertz detector with the adjustable two channels at room temperature, the discrete gate electrode is a gold film, the line width of the discrete gate electrode is 1-2.2 μm, the line spacing is 500-600 nm, and the thickness is 20-50 nm; the log periodic antenna is a gold film, and the outer radius size is as follows: 1-2 mm and a thickness of 100-200 nm.
Preferably, in the terahertz detector with the adjustable two channels at room temperature, the length of the two-dimensional graphene conducting channel is 5-10 μm, and the mobility is 1000-10000 cm2 V-1s-1Concentration of carriers 1011～1014cm-2。
A method for preparing a terahertz detector with adjustable and controllable two channels at room temperature comprises the following steps:
s1: firstly, cleaning the surface of a silicon substrate covered with silicon oxide, and cutting the silicon substrate into samples of 1cm multiplied by 1cm by a cutting technology;
s2: transferring the one-dimensional indium arsenide nanowire epitaxially grown by the molecular beam to the silicon substrate by a transfer platform micro-area positioning method and a dry transfer technology, and numbering and positioning the nanowire;
s3: preparing a source drain electrode and a lead electrode which are contacted with the one-dimensional indium arsenide nanowire by combining ultraviolet lithography, an electron beam evaporation method and a stripping process to form ohmic contact, and then utilizing an ultraviolet lithography alignment mark and an electron beam lithography alignment mark;
s4: depositing an alumina gate dielectric layer on the whole sample at a high temperature of 300 ℃ by utilizing an atomic layer deposition technology;
s5: preparing a discrete gate electrode, a log periodic antenna and a lead electrode by combining an ultraviolet lithography and electron beam exposure method, an electron beam evaporation method and a stripping process;
s6: transferring the two-dimensional graphene material to a gap of the log periodic antenna by a transfer platform micro-area positioning method and a dry transfer technology, so that the discrete gate electrode can be completely covered and ohmic contact is formed between the discrete gate electrode and two arms of the log periodic antenna;
s7: exposing the lead electrode of the source and drain electrodes covered by the alumina gate dielectric layer by an ultraviolet lithography process and a solution corrosion method so as to facilitate lead testing;
s8: 300-400 nm thickened source-drain electrodes and lead electrodes are prepared by ultraviolet lithography, electron beam evaporation and stripping processes, so that lead testing is facilitated
S9: finally, the device is packaged and tested by adopting a standard semiconductor packaging technology.
Compared with the prior art, the invention has the beneficial effects that:
1. the one-dimensional indium arsenide nanowire is used as a photosensitive conducting channel, and the dimension of the one-dimensional indium arsenide nanowire is limited, so that excellent photoelectric characteristics such as ultrahigh intrinsic photoelectric gain, multi-array light limiting effect, sub-wavelength size effect, ballistic transport and the like are presented, and the miniaturized and highly integrated terahertz functional device can be realized.
2. The graphene material with high carrier mobility and adjustable is used as a photosensitive conducting channel, and adjustable terahertz detection can be realized by utilizing graphene terahertz plasma wave rectification or thermoelectric effect.
3. The discrete gate electrodes interconnected with the log-periodic antennas are integrated, strong optical field coupling and distribution are achieved, dual-channel coupled terahertz detection can be achieved, and a foundation is laid for achieving arraying and large-scale application of terahertz wave detectors.
4. The invention uses a two-dimensional graphene material with high mobility and adjustable carrier concentration and a one-dimensional indium arsenide nanowire material as basic structural units to construct a dual-channel field effect transistor, and the field effect transistor is provided with a group of discrete gate electrodes and source and drain electrodes of a terahertz wave coupling antenna. The terahertz detection is dual-channel, high in response and capable of being regulated and controlled in multiple dimensions; the integration level, the process maturity and the repeatability of the device lay the device and the theoretical foundation for realizing the room temperature, integration, multi-channel and adjustable terahertz detection research.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of an orthographic view and an enlarged channel of a two-channel terahertz detector according to the invention;
FIG. 2 is a schematic front side view of the structure of the dual-channel terahertz wave detector shown in FIG. 1;
FIG. 3 is a schematic left side view of the structure of the dual-channel terahertz wave detector shown in FIG. 1;
FIG. 4 is a transfer characteristic curve I of the nanowire controlled by graphene serving as a top gate at room temperature of the dual-channel terahertz wave detectorDS-VTG；
FIG. 5 is a waveform diagram of photoresponse current of the nanowire regulated by graphene serving as a top gate at room temperature according to the dual-channel terahertz wave detector;
FIG. 6 is a transfer characteristic curve I of graphene controlled by the action of nanowires serving as bottom gates at room temperature of the dual-channel terahertz wave detectorDS-VLG；
FIG. 7 is a voltage waveform diagram of the photoresponse of graphene regulated by the action of the nanowire serving as the bottom gate at room temperature of the dual-channel terahertz wave detector;
fig. 8 is a photocurrent response waveform diagram of two-channel synchronous acquisition at room temperature of the dual-channel terahertz wave detector of the invention.
In the drawings, the components represented by the respective reference numerals are listed below:
1. a two-dimensional graphene conductive channel; 2. a one-dimensional indium arsenide nanowire; 3. a discrete gate electrode; 4. a source drain electrode; 5. a lead electrode; 6. a silicon substrate; 7. a log periodic antenna; 8. and (4) oxidizing the aluminum oxide gate dielectric layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
Referring to fig. 1-3, an embodiment of the present invention is shown: a terahertz detector with an adjustable two channels at room temperature comprises a silicon substrate 6 covering silicon oxide, a one-dimensional indium arsenide nanowire 2 which is grown through molecular beam epitaxy is transferred to the silicon substrate 6 covering the silicon oxide, source and drain electrodes 4 and corresponding lead electrodes 5 are prepared in the extending direction of the one-dimensional indium arsenide nanowire 2, an aluminum oxide gate dielectric layer 8 grows on a conducting channel of the one-dimensional indium arsenide nanowire 2, a discrete gate electrode 3 is respectively connected with two arms of a logarithmic periodic antenna 7 in an interconnecting mode, a two-dimensional graphene conducting channel 1 is transferred in the distance between the two arms of the logarithmic periodic antenna 7, and the two-dimensional graphene conducting channel 1 completely covers the outer portion of the discrete gate electrode 3.
The two-dimensional graphene conductive channel 1 and the one-dimensional indium arsenide nanowire 2 which are high and adjustable in carrier mobility are used as photosensitive conductive channels, photoelectric characteristics such as ultrahigh intrinsic photoelectric gain, sub-wavelength size effect and ballistic transport are combined, terahertz plasma wave rectification or thermoelectric effect of low-dimensional materials is utilized, and terahertz detection which is dual-channel, high in response and capable of being adjusted and controlled in multiple dimensions is achieved by combining strong optical field coupling and distribution of the integrated log-periodic antenna 7 and the interconnected discrete grid 3.
Example 2
A method for preparing a terahertz detector with adjustable and controllable two channels at room temperature comprises the following steps:
s1: firstly, cleaning the surface of a silicon substrate 6 covered with silicon oxide, and cutting the silicon substrate 6 into samples of 1cm multiplied by 1cm by a cutting technology;
s2: transferring the one-dimensional indium arsenide nanowire 2 epitaxially grown by molecular beams to the silicon substrate 6 by a transfer platform micro-area positioning method and a dry transfer technology, and numbering and positioning the nanowire for marking;
s3: preparing a source-drain electrode 4 and a lead electrode 5 which are in contact with the one-dimensional indium arsenide nanowire 2 by combining ultraviolet lithography, an electron beam evaporation method and a stripping process to form good ohmic contact, and then photoetching an alignment mark by utilizing ultraviolet lithography and an electron beam lithography;
s4: depositing an alumina gate dielectric layer 8 on the whole sample at a high temperature of 300 ℃ by utilizing an atomic layer deposition technology;
s5: preparing a discrete gate electrode 3, a log periodic antenna 7 and a lead electrode 5 by combining an ultraviolet lithography and electron beam exposure method, an electron beam evaporation method and a stripping process;
s6: transferring the two-dimensional graphene material to the gap of the log periodic antenna 7 by a transfer platform micro-area positioning method and a dry transfer technology, wherein the two-dimensional graphene material can completely cover the discrete gate electrode 3 and form good ohmic contact with two arms of the log periodic antenna 7;
s7: exposing the lead electrode 5 of the source/drain electrode 4 covered by the alumina gate dielectric layer 8 by an ultraviolet lithography process and a solution corrosion method so as to facilitate lead testing;
s8: the 300-400 nm thickened source-drain electrode 4 and the lead electrode 5 are prepared through ultraviolet lithography, electron beam evaporation and stripping processes, so that lead testing is facilitated;
s9: finally, the device is packaged and tested by adopting a standard semiconductor packaging technology.
The testing steps are as follows: the terahertz radiation detector is characterized in that a 0.02-0.04 THz microwave oscillator and a Gunn oscillator are combined with a frequency tripler and the frequency tripler to generate 0.1-0.3 THz continuous wave radiation, terahertz radiation is modulated through a chopper (SR430), a light source is focused on a detector through an off-axis parabolic mirror, a light response signal generated by the detector is amplified through a preamplifier (SR570) and is respectively input into an oscilloscope and a lock-in amplifier (SR830), besides, the modulation frequency of the chopper (SR430) is required to be used as a reference signal and is respectively input into the oscilloscope and the lock-in amplifier, and the response waveform and the response amplitude of the terahertz radiation detector are accurately recorded.
Example 3
The thickness of the silicon substrate 6 covered with silicon oxide was 0.5 mm; the length of the one-dimensional indium arsenide nanowire 3 is about 6 microns, the diameter of the one-dimensional indium arsenide nanowire is about 100nm, and the thickness of the source/drain electrode 4 and the corresponding lead electrode 5 is 200 nm; the thickness of the alumina gate dielectric layer 8 is 30 nm; the line width of the discrete gate electrode 3 is 1 μm, the line spacing is 500nm, the thickness is 20nm, and the size of the log periodic antenna 7 is as follows: the outer radius is 1mm, and the thickness is 100 nm; the length of the two-dimensional graphene conductive channel 1 is 8 mu m, and the mobility is 1000-10000 cm2 V-1s-1Concentration of carriers 1011～1014cm-2(ii) a As shown in fig. 4, the graphene acts as a top gate to regulate the InAs nanowire transfer curve, the one-dimensional indium arsenide nanowire 3 has good electrical properties of a field effect tube, and the graphene can well regulate the conductivity of the InAs nanowire. As shown in fig. 5, the bias voltage acting on the InAs nanowire is zero, and under terahertz irradiation, a photoresponse current is generated in the InAs nanowire channel of the device, which is similar to a photovoltaic device and has a high signal-to-noise ratio; as the voltage of the graphene serving as the top gate is increased linearly, the amplitude of the photoresponse current is increased, then is decreased, then is gradually increased downwards, and tends to be in a saturated state, and in the regulation process, the polarity of the photoresponse current is reversed, in short,the terahertz wave detection can be regulated and controlled through the grid voltage.
Example 4
The thickness of the silicon substrate 6 covered with silicon oxide was 0.5 mm; the length of the one-dimensional indium arsenide nanowire 3 is about 8 mu m, the diameter is about 120nm, and the thickness of the source/drain electrode 4 and the corresponding lead electrode 5 is 200 nm; the thickness of the alumina gate dielectric layer 8 is 30 nm; the line width of the discrete gate electrode 3 is 1 μm, the line spacing is 500nm, the thickness is 30nm, and the size of the log periodic antenna 7 is as follows: the outer radius is 1mm, and the thickness is 100 nm; the length of the two-dimensional graphene conductive channel 1 is 8 mu m, and the mobility is 1000-10000 cm2 V-1s-1Concentration of carriers 1011～1014cm-2(ii) a As shown in fig. 6, the graphene has good electrical properties of a field effect transistor, and the nanowire is used as a gate to regulate a transfer curve of the graphene, so that the nanowire can regulate and control the conductivity of the graphene to realize P-type and N-type doping of the graphene, and the voltage of a Dirac point is near-2V. As shown in fig. 7, the bias voltage acting on the graphene channel is zero, and the photoresponse current generated in the graphene channel of the device is observed in real time under terahertz irradiation, which is similar to a photovoltaic device and has a high signal-to-noise ratio; the method can also be seen that different doping types of graphene are realized by gate voltage regulation, but the amplitude of the photoresponse current is only slightly changed, and the polarity of the photoresponse current is not reversed in the regulation process, so that the method is greatly different from the previous nanowire channel detection regulation result.
Example 5
The thickness of the silicon substrate 6 covered with silicon oxide is 1 mm; the length of the one-dimensional indium arsenide nanowire 3 is about 8 mu m, the diameter of the one-dimensional indium arsenide nanowire is about 120nm, and the thickness of the source-drain electrode 4 and the corresponding lead electrode 5 is 300 nm; the thickness of the alumina gate dielectric layer 8 is 30 nm; the line width of the discrete gate electrode 3 is 2 μm, the line spacing is 500nm, the thickness is 20nm, and the size of the log periodic antenna 7 is as follows: the outer radius is 1mm, and the thickness is 100 nm; the length of the two-dimensional graphene conductive channel 1 is 10 mu m, and the mobility is 1000-10000 cm2 V-1s-1Concentration of carriers 1011～1014cm-2(ii) a As shown in fig. 8, the bias voltages applied to the two channels are both zero, and under terahertz irradiation, the two channel devices synchronously generate photoresponse currents, in combination with cases 1 and 1In case 2, two channels participate in terahertz response, which indicates that the terahertz radiation has a two-channel coupling absorption effect and a two-channel mutual regulation and control coupling effect, and the result provides a good research platform for terahertz two-channel detection.
Various parameters in the detector structure are changed within a certain range, the room-temperature dual-channel adjustable terahertz wave detector has good performance, and test results show that the electrical adjustment and control of two-dimensional material graphene and one-dimensional nano wires are preliminarily realized; two photosensitive channels participate in terahertz wave detection response, due to the double-channel coupling absorption effect and the double-channel mutual regulation and control coupling effect, the amplitude and the polarity of the device photoresponse current are obviously coupled and controlled, and meanwhile, the device has a similar light guide and similar photovoltaic detection mode; and finally, a direction is provided for designing the terahertz detection device by utilizing terahertz plasma wave rectification or thermoelectric effect of a low-dimensional material dual channel.
In the description herein, references to the description of "one embodiment," "an example," "a specific example" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The preferred embodiments of the invention disclosed above are intended to be illustrative only. The preferred embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention. The invention is limited only by the claims and their full scope and equivalents.
Claims (5)
1. The utility model provides a terahertz detector that room temperature binary channels can be regulated and control which characterized in that: the detector comprises a silicon substrate (6) covered with silicon oxide, a one-dimensional indium arsenide nanowire (2) which is grown by molecular beam epitaxy is transferred onto the silicon substrate (6) covered with the silicon oxide, a source electrode, a drain electrode (4) and a corresponding lead electrode (5) are prepared in the extending direction of the one-dimensional indium arsenide nanowire (2), an aluminum oxide gate dielectric layer (8) grows on a conducting channel of the one-dimensional indium arsenide nanowire (2), a discrete gate electrode (3) is respectively interconnected with two arms of a log-periodic antenna (7), a two-dimensional graphene conducting channel (1) is transferred in the distance between the two arms of the log-periodic antenna (7), and the two-dimensional graphene conducting channel (1) completely covers the outside of the discrete gate electrode (3).
2. The room temperature dual-channel adjustable terahertz detector as claimed in claim 1, wherein: the thickness of the silicon substrate (6) covering the silicon oxide is 0.5-1 mm; the length of the one-dimensional indium arsenide nanowire is 6-12.5 mu m, and the diameter of the one-dimensional indium arsenide nanowire is 100-120 nm; the thickness of the source and drain electrodes (4) is 50-100 nm, and the thickness of the corresponding lead electrode (5) is 200-400 nm; the thickness of the aluminum oxide gate dielectric layer (8) is 30-50 nm.
3. The room temperature dual-channel adjustable terahertz detector as claimed in claim 1, wherein: the discrete gate electrode (3) is a gold film, the line width of the discrete gate electrode is 1-2.2 mu m, the line spacing is 500-600 nm, and the thickness is 20-50 nm; the log periodic antenna (7) is a gold film, and the outer radius size is as follows: 1-2 mm and a thickness of 100-200 nm.
4. The room temperature dual-channel adjustable terahertz detector as claimed in claim 1, wherein: the two-dimensional graphene conductive channel (1) is 5-10 mu m in length and 1000-10000 cm in mobility2V-1s-1Concentration of carriers 1011～1014cm-2。
5. A method for preparing the room-temperature dual-channel adjustable terahertz detector as claimed in claim 1, is characterized in that: the method comprises the following steps:
s1: firstly, cleaning the surface of a silicon substrate (6) covered with silicon oxide, and cutting the silicon substrate (6) into samples of 1cm multiplied by 1cm by a cutting technology;
s2: transferring the one-dimensional indium arsenide nanowire (2) epitaxially grown by molecular beams to the silicon substrate (6) by a transfer platform micro-area positioning method and a dry transfer technology, and numbering and positioning the nanowire;
s3: preparing a source drain electrode (4) and a lead electrode (5) which are contacted with the one-dimensional indium arsenide nanowire (2) by combining ultraviolet lithography, an electron beam evaporation method and a stripping process to form ohmic contact, and then photoetching an alignment mark by utilizing ultraviolet lithography and an electron beam lithography;
s4: depositing an alumina gate dielectric layer (8) on the whole sample at a high temperature of 300 ℃ by utilizing an atomic layer deposition technology;
s5: preparing a discrete gate electrode (3), a log periodic antenna (7) and a lead electrode (5) by combining ultraviolet lithography with an electron beam exposure method, an electron beam evaporation method and a stripping process;
s6: transferring a two-dimensional graphene material to a gap of a log periodic antenna (7) by a transfer platform micro-area positioning method and utilizing a dry transfer technology, wherein the two-dimensional graphene material can completely cover a discrete gate electrode (3) and form ohmic contact with two arms of the log periodic antenna (7);
s7: exposing a lead electrode (5) of the source drain electrode (4) covered by the alumina gate dielectric layer (8) through an ultraviolet lithography process and a solution corrosion method so as to facilitate lead testing;
s8: the 300-400 nm thickened source-drain electrode (4) and the lead electrode (5) are prepared through ultraviolet lithography, electron beam evaporation and stripping processes, so that lead testing is facilitated;
s9: finally, the device is packaged and tested by adopting a standard semiconductor packaging technology.
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