CN112054088A - X-ray detector based on field effect transistor structure and preparation method thereof - Google Patents
X-ray detector based on field effect transistor structure and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/119—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation characterised by field-effect operation, e.g. MIS type detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses an X-ray detector based on a field effect transistor structure and a preparation method thereof, wherein the X-ray detector comprises an X-ray absorption layer capable of absorbing X-rays, a semiconductor channel layer, a grid electrode, a grid dielectric layer, a source electrode, a drain electrode and a substrate, when the X-rays are incident to the X-ray absorption layer of the X-ray detector, electron-hole pairs are generated in the X-ray absorption layer, and the electrons or holes generated by the irradiation of the X-rays can be transferred to the semiconductor channel layer by the X-ray absorption layer and flow between the source electrode and the drain electrode so as to generate current. Compared with the traditional diode-based X-ray detector, the phototransistor combines the respective advantages of the transistor and the conventional photoconductive device, obtains high-efficiency charge transfer by means of a heterojunction structure, utilizes the high-efficiency transmission of current carriers in a semiconductor channel, and generates a huge gain amplification effect, so that the high-performance X-ray detector with ultrahigh sensitivity and ultralow detection limit is obtained.
Description
Technical Field
The invention belongs to the field of X-ray detectors, and particularly relates to an X-ray detector based on a field effect transistor structure and a preparation method thereof.
Background
The X-ray detector has important application value in the fields of medical diagnosis, scientific research, industrial nondestructive testing, national defense safety and the like. The X-ray detector is mainly based on two photoelectric conversion mechanisms: one is a direct type X-ray detector, which directly converts an X-ray signal into an electrical signal by a photosensitive semiconductor material; the other is an indirect X-ray detector, which converts X-rays into visible light by a scintillator and then converts the optical signal into an electrical signal by a visible light detector. At present, the X-ray photodetectors based on these two photoelectric conversion mechanisms have been commercialized, but still have many problems and challenges. Due to the conversion process related to the scintillator material, the generated visible light is affected by crosstalk caused by optical refraction and scattering, and the spatial resolution of the detector is not high. The direct X-ray detector mainly adopts materials such as CdZnTe and amorphous Se as X-ray absorption materials, the atomic number of the materials is small, so that the detection sensitivity is low, the preparation of the high-quality amorphous Se material is difficult, and the carrier transmission performance is poor; moreover, the direct X-ray detector is usually expensive, has harsh working conditions, and can detect X-rays with low energy, so that the direct X-ray detector still faces various difficulties in the practical application process. Furthermore, X-ray detectors based on both of these conversion mechanisms require very thick X-ray blocking materials, making it difficult for current technologies to implement flexible X-ray detectors. Therefore, it is very important to greatly improve the detection sensitivity of the X-ray detector and reduce the detection limit of the X-ray by adopting a new photoelectric conversion material and designing a new device structure.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention solves the technical problems that: the field effect transistor X-ray detector comprises a channel semiconductor, an X-ray photoconductive material, a heterojunction, a light-emitting diode and a light-emitting diode, and is characterized in that the channel semiconductor and the X-ray photoconductive material are arranged on the channel semiconductor, and the light-emitting diode is arranged on the channel semiconductor.
In order to achieve the above object, a first aspect of the present invention provides a first field effect transistor structure-based X-ray detector, comprising:
the substrate is positioned at the bottom of the X-ray detector;
the lower surface of the grid electrode is manufactured on the upper surface of the substrate;
the grid dielectric layer is used for insulation, and the lower surface of the grid dielectric layer is manufactured on the upper surface of the grid electrode;
the semiconductor channel layer is used for transmitting charges to generate channel current, and the lower surface of the semiconductor channel layer is manufactured on the upper surface of the grid dielectric layer;
the X-ray layer comprises an X-ray absorption layer, a source electrode and a drain electrode, wherein the lower surface of the X-ray layer is manufactured on the upper surface of the semiconductor channel layer, the lower surface of the X-ray absorption layer is manufactured in the middle of the upper surface of the semiconductor channel layer and covers a part of the upper surface of the semiconductor channel layer, the source electrode and the drain electrode are positioned at the left and right opposite positions of the X-ray absorption layer, and the lower surface of the source electrode and the lower surface of the drain electrode respectively cover the part, which is not covered by the lower surface of the X-ray absorption layer, of the left and right opposite positions of the upper surface of the semiconductor channel layer;
the semiconductor channel layer and the X-ray layer have the following structure that the relative positions of the semiconductor channel layer and the X-ray layer are exchanged: the lower surface of the X-ray layer is manufactured on the upper surface of the grid dielectric layer;
and the lower surface of the semiconductor channel layer is manufactured on the upper surface of the X-ray layer and covers the whole upper surface of the X-ray layer.
The invention also provides a second X-ray detector based on a field effect transistor structure, comprising:
the substrate is positioned at the bottom of the X-ray detector;
the lower surface of the grid electrode is manufactured on the upper surface of the substrate;
the grid dielectric layer is used for insulation, and the lower surface of the grid dielectric layer is manufactured on the upper surface of the grid electrode;
the semiconductor channel layer is used for transmitting charges to generate channel current, and the lower surface of the semiconductor channel layer is manufactured on the upper surface of the grid dielectric layer;
the lower surface of the X-ray absorption layer is manufactured on the upper surface of the semiconductor channel layer;
the lower surface of the source electrode and the lower surface of the drain electrode are manufactured on the upper surface of the X-ray absorption layer, and the source electrode is not in contact with the drain electrode;
the semiconductor channel layer and the X-ray absorption layer have the following structure that the relative positions of the semiconductor channel layer and the X-ray absorption layer are exchanged:
the lower surface of the X-ray absorption layer is manufactured on the upper surface of the grid dielectric layer;
the lower surface of the semiconductor channel layer is manufactured on the upper surface of the X-ray absorption layer;
and the lower surface of the source electrode and the lower surface of the drain electrode are manufactured on the upper surface of the semiconductor channel layer.
The invention also provides a third X-ray detector based on a field effect transistor structure, comprising:
the substrate is positioned at the bottom of the X-ray detector;
the lower surface of the grid electrode is manufactured on the upper surface of the substrate;
the grid dielectric layer is used for insulation, and the lower surface of the grid dielectric layer is manufactured on the upper surface of the grid electrode;
the semiconductor layer comprises a semiconductor channel layer, a source electrode and a drain electrode, wherein the lower surface of the semiconductor layer is manufactured on the upper surface of the grid dielectric layer, the lower surface of the semiconductor channel layer is manufactured in the middle of the upper surface of the grid dielectric layer and covers a part of the upper surface of the grid dielectric layer, the source electrode and the drain electrode are positioned at the left and right opposite positions of the semiconductor channel layer, and the lower surface of the source electrode and the lower surface of the drain electrode respectively cover the part, which is not covered by the lower surface of the semiconductor channel layer, of the left and right opposite positions of the upper surface of the grid dielectric layer;
the lower surface of the X-ray absorption layer is manufactured on the upper surface of the semiconductor layer, and the lower surface of the X-ray absorption layer covers the whole upper surface of the semiconductor layer;
the semiconductor layer and the X-ray absorption layer have the following structure that the relative positions of the semiconductor layer and the X-ray absorption layer are exchanged:
the lower surface of the X-ray absorption layer is manufactured on the upper surface of the grid dielectric layer;
and the lower surface of the semiconductor layer is manufactured on the upper surface of the X-ray absorption layer.
The present invention also provides a fourth X-ray detector based on a field effect transistor structure, comprising:
the substrate is positioned at the bottom of the X-ray detector;
the semiconductor layer comprises a semiconductor channel layer, a source electrode and a drain electrode, wherein the lower surface of the semiconductor layer is manufactured on the upper surface of the substrate, the lower surface of the semiconductor channel layer is manufactured in the middle of the upper surface of the substrate and covers a part of the upper surface of the substrate, the source electrode and the drain electrode are positioned at left and right opposite positions of the semiconductor channel layer, and the lower surface of the source electrode and the lower surface of the drain electrode respectively cover the part, which is not covered by the lower surface of the semiconductor channel layer, of the left and right opposite positions of the upper surface of the substrate;
the lower surface of the X-ray absorption layer is manufactured on the upper surface of the semiconductor layer, and the lower surface of the X-ray absorption layer covers the whole upper surface of the semiconductor layer;
the grid dielectric layer is used for insulation, and the lower surface of the grid dielectric layer is manufactured on the upper surface of the X-ray absorption layer;
the lower surface of the grid electrode is manufactured on the upper surface of the grid dielectric layer;
the semiconductor layer and the X-ray absorption layer have the following structure that the relative positions of the semiconductor layer and the X-ray absorption layer are exchanged:
the lower surface of the X-ray absorption layer is manufactured on the upper surface of the substrate;
the lower surface of the semiconductor layer is manufactured on the upper surface of the X-ray absorption layer;
and the lower surface of the grid dielectric layer is manufactured on the upper surface of the semiconductor layer, and the lower surface of the grid dielectric layer covers the whole upper surface of the semiconductor layer.
The invention also provides a fifth X-ray detector based on the field effect transistor structure, which comprises:
the substrate is positioned at the bottom of the X-ray detector;
the X-ray layer comprises an X-ray absorption layer, a source electrode and a drain electrode, wherein the lower surface of the X-ray layer is manufactured on the upper surface of the substrate, the lower surface of the X-ray absorption layer is manufactured in the middle of the upper surface of the substrate and covers a part of the upper surface of the substrate, the source electrode and the drain electrode are positioned at left and right opposite positions of the substrate, and the lower surface of the source electrode and the lower surface of the drain electrode respectively cover the parts of the left and right opposite positions of the upper surface of the substrate, which are not covered by the lower surface of the X-ray absorption layer;
the semiconductor channel layer is used for transmitting charges to generate channel current, the lower surface of the semiconductor channel layer is manufactured on the upper surface of the X-ray layer, and the lower surface of the semiconductor channel layer covers the whole upper surface of the X-ray layer;
the grid dielectric layer is used for insulation, and the lower surface of the grid dielectric layer is manufactured on the upper surface of the semiconductor channel layer;
the lower surface of the grid electrode is manufactured on the upper surface of the grid dielectric layer;
the semiconductor channel layer and the X-ray layer have the following structure that the relative positions of the semiconductor channel layer and the X-ray layer are exchanged:
the lower surface of the semiconductor channel layer is manufactured on the upper surface of the substrate;
the lower surface of the X-ray layer is manufactured on the upper surface of the semiconductor channel layer;
the lower surface of the grid dielectric layer is manufactured on the upper surface of the X-ray layer, and the lower surface of the grid dielectric layer covers the whole upper surface of the X-ray layer.
The invention also provides a sixth X-ray detector based on the field effect transistor structure, which comprises:
the substrate is positioned at the bottom of the X-ray detector;
the semiconductor channel layer is used for transmitting charges to generate channel current, and the lower surface of the semiconductor channel layer is manufactured on the upper surface of the substrate;
the lower surface of the X-ray absorption layer is manufactured on the upper surface of the semiconductor channel layer;
the dielectric layer comprises a grid dielectric layer, a source electrode and a drain electrode, the lower surface of the dielectric layer is manufactured on the upper surface of the X-ray absorption layer, the lower surface of the grid dielectric layer is manufactured in the middle of the upper surface of the X-ray absorption layer and covers one part of the upper surface of the X-ray absorption layer, the source electrode and the drain electrode are positioned at the left and right opposite positions of the X-ray absorption layer, and the lower surface of the source electrode and the lower surface of the drain electrode respectively cover the parts of the left and right opposite positions of the upper surface of the X-ray absorption layer, which are not covered by the lower surface of the grid dielectric layer;
the lower surface of the grid electrode is manufactured on the upper surface of the dielectric layer, and the whole lower surface of the grid electrode just covers the upper surface of the grid dielectric layer included in the dielectric layer;
the semiconductor channel layer and the X-ray absorption layer have the following structure that the relative positions of the semiconductor channel layer and the X-ray absorption layer are exchanged:
the lower surface of the X-ray absorption layer is manufactured on the upper surface of the substrate;
the lower surface of the semiconductor channel layer is manufactured on the upper surface of the X-ray absorption layer;
and the lower surface of the dielectric layer is manufactured on the upper surface of the semiconductor channel layer.
Preferably, the substrate is a rigid substrate or a flexible substrate, the rigid substrate is selected from one of silicon, SiC, GaN, quartz, sapphire and glass, and the flexible substrate is selected from one of polyethylene terephthalate (PET), polyethylene naphthalate (PEN), Polyimide (PI), flexible glass, thin metal and paper substrate.
Preferably, the material of the X-ray absorbing layer is a bulk heterojunction composite or a layer heterojunction composite.
Further, gamma rays are used instead of the X-rays.
In a second aspect of the present invention, a method for preparing an X-ray detector based on a field effect transistor structure is provided, which comprises the following steps:
(1) purifying the substrate: using a silicon wafer as a substrate, sequentially placing the substrate in acetone, alcohol solvent and deionized water, respectively performing ultrasonic cleaning for 5-20min, and cleaning with N2Drying with a gun, and performing UV/ozone or O2Plasma treatment for 5-10 min;
(2) preparing a grid electrode, and depositing a conductive metal layer or a conductive non-metal layer on the surface to form the grid electrode;
(3) preparing a gate dielectric layer: depositing at least one insulating layer by adopting an insulating layer film forming mode to form a gate dielectric layer;
(4) preparing a channel semiconductor layer, and preparing a semiconductor channel layer by using a vacuum film-making process or a liquid-phase film-making process;
(5) preparing a source electrode and a drain electrode: depositing a layer of 10-100nm metal Au as a source electrode and a drain electrode by using vacuum evaporation through a mask plate, wherein a channel region is formed between the source electrode and the drain electrode;
(6) preparing an X-ray absorption layer, and preparing the X-ray absorption layer by using a vacuum film preparation process or a liquid phase film preparation process.
The invention provides a plurality of X-ray detectors based on field effect transistor structures and a preparation method of the X-ray detector based on the field effect transistor structures, which have the beneficial effects that: based on the heterojunction structure, the field effect transistor X-ray detector can fully utilize the high absorption coefficient and the photoelectric conversion characteristic of the selected X-ray absorption material, the efficient charge transfer between the heterojunctions and the efficient transmission of current carriers in a channel, thereby obtaining the high-performance X-ray detector with ultrahigh sensitivity and ultralow detection limit.
Drawings
FIGS. 1a and 1b are schematic views of a first device structure of an X-ray detector according to the present invention;
FIGS. 2a and 2b are schematic views of a second device structure of the X-ray detector of the present invention;
FIGS. 3a and 3b are schematic structural diagrams of a third device of the X-ray detector of the present invention;
FIGS. 4a and 4b are schematic structural diagrams of a fourth device of the X-ray detector of the present invention;
FIGS. 5a and 5b are schematic views of a fifth device structure of the X-ray detector of the present invention;
fig. 6a and 6b are schematic structural diagrams of a sixth device of the X-ray detector of the present invention.
Detailed Description
In order to further describe the technical scheme of the present invention in detail, the present embodiment is implemented on the premise of the technical scheme of the present invention, and detailed implementation modes and specific steps are given.
Example one
Fig. 1a and 1b are schematic diagrams of a first device structure of the X-ray detector of the present invention, fig. 1a, including a substrate 1 at the bottom of the X-ray detector; a gate electrode 2, wherein the lower surface of the gate electrode 2 is formed on the upper surface of the substrate 1; a gate dielectric layer 3 for insulation, wherein the lower surface of the gate dielectric layer 3 is formed on the upper surface of the gate electrode 2; a semiconductor channel layer 4 for transmitting charges to generate channel current, wherein the lower surface of the semiconductor channel layer 4 is manufactured on the upper surface of the grid dielectric layer 3; an X-ray layer 7 including an X-ray absorption layer 5, a source electrode 6-1 and a drain electrode 6-2, wherein a lower surface of the X-ray layer 7 is formed on an upper surface of the semiconductor channel layer 4, a lower surface of the X-ray absorption layer 5 is formed in a middle position of the upper surface of the semiconductor channel layer 4 and covers a part of the upper surface of the semiconductor channel layer 4, the source electrode 6-1 and the drain electrode 6-2 are located at left and right opposite positions of the X-ray absorption layer 5, and a lower surface of the source electrode 6-1 and a lower surface of the drain electrode 6-2 respectively cover a part of the left and right opposite positions of the upper surface of the semiconductor channel layer 4 which is not covered by the lower surface of the X-ray absorption layer 5; the semiconductor channel layer 4 and the X-ray layer 7 have a structure in which their relative positions are switched as shown in fig. 1 b: the lower surface of the X-ray layer 7 is manufactured on the upper surface of the grid dielectric layer 3; and the lower surface of the semiconductor channel layer 4 is manufactured on the upper surface of the X-ray layer 7 and covers the whole upper surface of the X-ray layer 7.
In this embodiment, as shown in fig. 1a, a gate electrode 2 is disposed on a substrate 1, a gate dielectric layer 3 covers the gate electrode 2, a semiconductor channel layer 4 is disposed on a surface of the gate dielectric layer 3, a source electrode 6-1 and a drain electrode 6-2 respectively cover a portion of the semiconductor channel layer 4, an X-ray absorption layer 5 covers a portion of the semiconductor channel layer 4 not covered by the source electrode 6-1 and the drain electrode 6-2, specifically, a silicon wafer is used as the substrate 1, the gate electrode 2 and the gate dielectric layer 3 are sequentially prepared on the surface of the substrate 1, the substrate 1 is sequentially placed in acetone, an alcohol solvent and deionized water, and the substrate is cleaned by ultrasonic processing for 5-20min, and N is used to clean the substrate 12Drying with a gun, and performing UV/ozone or O2Plasma processing is carried out for 5-10min, and a semiconductor channel layer 4 is prepared on the grid dielectric layer 3 by using a vacuum film-making process or a liquid-phase film-making process; a layer of metal Au with the thickness of 10-100nm is evaporated on the semiconductor channel layer 4 through a mask in a vacuum manner to be used as a source electrode 6-1 and a drain electrode 6-2, wherein a channel region is formed between the source electrode 6-1 and the drain electrode 6-2; and depositing a ray absorption material in a channel region by using a vacuum film-making process or a liquid-phase film-making process to form an X-ray absorption layer 5, thereby completing the preparation of the field effect transistor X-ray detector.
In this embodiment, as shown in FIG. 1b, a gate electrode 2 is providedOn the substrate 1, a gate dielectric layer 3 is disposed on the gate electrode 2, a source electrode 6-1 and a drain electrode 6-2 cover a portion of the gate dielectric layer, an X-ray absorption layer 5 is disposed on the gate dielectric layer 3 not covered by the source electrode 6-1 and the drain electrode 6-2 and covers the source electrode 6-1 and the drain electrode 6-2, and a semiconductor channel layer 4 is disposed on the X-ray absorption layer 5. Specifically, a silicon wafer is used as a substrate 1, a grid electrode 6-1 and a grid dielectric layer 6-2 are sequentially prepared on the surface of the substrate 1, the substrate 1 is sequentially placed in acetone, an alcohol solvent and deionized water to be cleaned for 5-20min in an ultrasonic mode, and N is used for cleaning the substrate2Drying with a gun, and performing UV/ozone or O2Plasma treatment for 5-10 min; depositing a layer of 10-100nm metal Au on the semiconductor channel layer 4 through a mask plate by using vacuum evaporation as a source electrode 6-1 and a drain electrode 6-2, wherein a channel region is formed between the source electrode 6-1 and the drain electrode 6-2, preparing the X-ray absorption layer 5 on the grid dielectric layer 3 by using a vacuum film-making process or a liquid-phase film-making process, covering the source electrode 6-1 and the drain electrode 6-2, and depositing the semiconductor channel layer 4 on the X-ray absorption layer 5 by using the vacuum film-making process or the liquid-phase film-making process to finish the preparation of the field effect transistor X-ray detector.
Example two
Fig. 2a and 2b are schematic diagrams of a second device structure of the X-ray detector of the present invention, fig. 2a, including a substrate 1 at the bottom of the X-ray detector; a gate electrode 2, wherein the lower surface of the gate electrode 2 is formed on the upper surface of the substrate 1; a gate dielectric layer 3 for insulation, wherein the lower surface of the gate dielectric layer 3 is formed on the upper surface of the gate electrode 2; a semiconductor channel layer 4 for transmitting charges to generate channel current, wherein the lower surface of the semiconductor channel layer 4 is manufactured on the upper surface of the grid dielectric layer 3; an X-ray absorption layer 5, wherein the lower surface of the X-ray absorption layer 5 is manufactured on the upper surface of the semiconductor channel layer 4; a source electrode 6-1 and a drain electrode 6-2, wherein the lower surface of the source electrode 6-1 and the lower surface of the drain electrode 6-2 are formed on the upper surface of the X-ray absorption layer 5, and the source electrode 6-1 is not in contact with the drain electrode 6-2; the semiconductor channel layer 4 and the X-ray absorption layer 5 have a structure in which their relative positions are switched as shown in fig. 2 b: the lower surface of the X-ray absorption layer 5 is manufactured on the upper surface of the grid dielectric layer 3; a semiconductor channel layer 4, wherein the lower surface of the semiconductor channel layer 4 is manufactured on the upper surface of the X-ray absorption layer 5; a source electrode 6-1 and a drain electrode 6-2, wherein the lower surface of the source electrode 6-1 and the lower surface of the drain electrode 6-2 are manufactured on the upper surface of the semiconductor channel layer 4.
In the present embodiment, as shown in fig. 2a, the gate electrode 2 is disposed on the substrate 1; a gate dielectric layer 3 covering the gate electrode 2; a semiconductor channel layer 4 disposed on the surface of the gate dielectric layer 3; an X-ray absorption layer 5 is disposed on the semiconductor channel layer 4, and a source electrode 6-1 and a drain electrode 6-2 respectively cover a portion of the X-ray absorption layer 5. Specifically, a silicon wafer is used as a substrate 1, a grid electrode 2 and a grid dielectric layer 3 are sequentially prepared on the surface of the substrate 1, the substrate 1 is sequentially placed in acetone, alcohol solvent and deionized water to be cleaned for 5-20min in an ultrasonic mode, and N is used for cleaning the substrate2Drying with a gun, and performing UV/ozone or O2Plasma treatment for 5-10 min; preparing a semiconductor channel layer 4 on the gate dielectric layer 3 by using a vacuum film-making process or a liquid-phase film-making process; depositing an X-ray absorption layer 5 on the semiconductor channel layer 4 using a vacuum film-forming process or a liquid phase film-forming process; a layer of metal Au with the thickness of 10-100nm is evaporated on the semiconductor channel layer 4 through a mask in a vacuum mode to serve as a source electrode 6-1 and a drain electrode 6-2, a channel region is formed between the source electrode 6-1 and the drain electrode 6-2, and the field effect transistor X-ray detector is manufactured.
In the present embodiment, as shown in fig. 2b, the gate electrode 2 is disposed on the substrate 1; a gate dielectric layer 3 covering the gate electrode 2; an X-ray absorption layer 5 capable of absorbing rays is positioned on the grid dielectric layer 3, and a semiconductor channel layer 4 is arranged on the X-ray absorption layer 5; the source electrode 6-1 and the drain electrode 6-2 cover a part of the semiconductor channel layer 4, respectively. Specifically, a silicon wafer is used as a substrate 1, a grid electrode 6-1 and a grid dielectric layer 6-2 are sequentially prepared on the surface of the substrate 1, and the substrate 1 is sequentially placed in acetone, alcohol solvent and deionized waterCleaning the substrate with N by sound for 5-20min2Drying with a gun, and performing UV/ozone or O2Plasma treatment for 5-10 min; preparing an X-ray absorption layer 5 on the grid dielectric layer 3 by using a vacuum film-making process or a liquid-phase film-making process; depositing the semiconductor channel layer 4 on the X-ray absorption layer using a vacuum film-making process or a liquid phase film-making process; and depositing a layer of 10-100nm metal Au on the semiconductor channel layer 4 through a mask plate by using vacuum evaporation to serve as a source electrode 6-1 and a drain electrode 6-2, wherein a channel region is formed between the source electrode 6-1 and the drain electrode 6-2, and the preparation of the field effect transistor X-ray detector is completed.
EXAMPLE III
Fig. 3a and 3b are schematic structural diagrams of a third device of the X-ray detector of the present invention, and fig. 3a includes a substrate 1 at the bottom of the X-ray detector; a gate electrode 2, wherein the lower surface of the gate electrode 2 is formed on the upper surface of the substrate 1; a gate dielectric layer 3 for insulation, wherein the lower surface of the gate dielectric layer 3 is formed on the upper surface of the gate electrode 2; a semiconductor layer 8 including a semiconductor channel layer 4, a source electrode 6-1 and a drain electrode 6-2, wherein a lower surface of the semiconductor layer 8 is formed on an upper surface of the gate dielectric layer 3, the lower surface of the semiconductor channel layer 4 is formed in a middle position of the upper surface of the gate dielectric layer 3 and covers a portion of the upper surface of the gate dielectric layer 3, the source electrode 6-1 and the drain electrode 6-2 are located at left and right opposite positions of the semiconductor channel layer 4, and a lower surface of the source electrode 6-1 and a lower surface of the drain electrode 6-2 respectively cover portions of the left and right opposite positions of the upper surface of the gate dielectric layer 3 which are not covered by the lower surface of the semiconductor channel layer 4; an X-ray absorption layer 5, wherein the lower surface of the X-ray absorption layer 5 is formed on the upper surface of the semiconductor layer 8, and the lower surface of the X-ray absorption layer 5 covers the whole upper surface of the semiconductor layer 8; the semiconductor layer 8 and the X-ray absorption layer 5 are arranged in a manner such that their relative positions are switched as shown in fig. 3 b: the lower surface of the X-ray absorption layer 5 is manufactured on the upper surface of the grid dielectric layer 3; and a semiconductor layer 8, wherein the lower surface of the semiconductor layer 8 is formed on the upper surface of the X-ray absorption layer 5.
In the present embodiment, as shown in fig. 3a, a gate electrode 2 is disposed on a substrate 1, a gate dielectric layer 3 is disposed on the gate electrode 2, a source electrode 6-1 and a drain electrode 6-2 respectively cover a portion of the gate dielectric layer 3, a semiconductor channel layer 4 is disposed on the gate dielectric layer 3 uncovered by the source electrode 6-1 and the drain electrode 6-2 and covers the source electrode 6-1 and the drain electrode 6-2, and an X-ray absorption layer 5 is disposed on the semiconductor channel layer 4. Specifically, a silicon wafer is used as a substrate 1, a grid electrode 2 and a grid dielectric layer 3 are sequentially prepared on the surface of the substrate 1, the substrate 1 is sequentially placed in acetone, alcohol solvent and deionized water to be cleaned for 5-20min in an ultrasonic mode, and N is used for cleaning the substrate2Drying with a gun, and performing UV/ozone or O2Plasma treatment for 5-10 min; depositing a layer of 10-100nm metal Au on the semiconductor channel layer 4 through a mask plate by using vacuum evaporation as a source electrode and a drain electrode, wherein a channel region is formed between the source electrode 6-1 and the drain electrode 6-2; preparing a semiconductor channel layer on the gate dielectric layer 3 by using a vacuum film-making process or a liquid-phase film-making process; and depositing the X-ray absorption layer 5 on the semiconductor channel layer 4 by using a vacuum film-making process or a liquid-phase film-making process to finish the preparation of the field effect transistor X-ray detector.
In the present embodiment, as shown in fig. 3b, a gate electrode 2 is disposed on a substrate 1, a gate dielectric layer 3 is disposed on the gate electrode 2, an X-ray absorption layer 5 is disposed on the gate dielectric layer 3, a source electrode 6-1 and a drain electrode 6-2 cover a portion of the X-ray absorption layer 5, and a semiconductor channel layer 4 is disposed on the X-ray absorption layer 5 not covered by the source electrode 6-1 and the drain electrode 6-2. Specifically, a silicon wafer is used as a substrate 1, a grid electrode 2 and a grid dielectric layer 3 are sequentially prepared on the surface of the substrate 1, the substrate 1 is sequentially placed in acetone, alcohol solvent and deionized water to be cleaned for 5-20min in an ultrasonic mode, and N is used for cleaning the substrate2Drying with a gun, and performing UV/ozone or O2Plasma treatment for 5-10 min; preparing an X-ray absorption layer 5 on the grid dielectric layer 3 by using a vacuum film-making process or a liquid-phase film-making process; vacuum evaporation is used, and a mask plate is used for covering the semiconductor trenchA layer of 10-100nm metal Au is deposited on the channel layer 4 to be used as a source electrode 6-1 and a drain electrode 6-2, wherein a channel region is formed between the source electrode 6-1 and the drain electrode 6-2; and depositing the semiconductor channel layer 4 on the X-ray absorption layer 5 by using a vacuum film-making process or a liquid-phase film-making process to finish the preparation of the field effect transistor X-ray detector.
Example four
Fig. 4a and 4b are schematic structural diagrams of a fourth device of the X-ray detector of the present invention, and fig. 4a includes a substrate 1 at the bottom of the X-ray detector; a semiconductor layer 8 including a semiconductor channel layer 4, a source electrode 6-1 and a drain electrode 6-2, wherein a lower surface of the semiconductor layer 8 is formed on an upper surface of the substrate 1, the lower surface of the semiconductor channel layer 4 is formed at a middle position of the upper surface of the substrate 1 and covers a portion of the upper surface of the substrate 1, the source electrode 6-1 and the drain electrode 6-2 are located at left and right opposite positions of the semiconductor channel layer 4, and a lower surface of the source electrode 6-1 and a lower surface of the drain electrode 6-2 respectively cover portions of the left and right opposite positions of the upper surface of the substrate 1 which are not covered by the lower surface of the semiconductor channel layer 4; an X-ray absorption layer 5, wherein the lower surface of the X-ray absorption layer 5 is formed on the upper surface of the semiconductor layer 8, and the lower surface of the X-ray absorption layer 5 covers the whole upper surface of the semiconductor layer 8; the grid dielectric layer 3 is used for insulation, and the lower surface of the grid dielectric layer 3 is manufactured on the upper surface of the X-ray absorption layer 5; the lower surface of the grid electrode 2 is manufactured on the upper surface of the grid dielectric layer 3; the semiconductor layer and the X-ray absorption layer 5 are arranged in a structure in which the relative positions of the semiconductor layer and the X-ray absorption layer are switched as shown in fig. 4 b: an X-ray absorption layer 5, wherein the lower surface of the X-ray absorption layer 5 is manufactured on the upper surface of the substrate 1; a semiconductor layer 8, wherein the lower surface of the semiconductor layer 8 is formed on the upper surface of the X-ray absorption layer 5; and the lower surface of the gate dielectric layer 3 is manufactured on the upper surface of the semiconductor layer 8, and the lower surface of the gate dielectric layer 3 covers the whole upper surface of the semiconductor layer 8.
In this embodiment, as shown in fig. 4a, the X-ray absorption layer 5 is provided on the substrate1, a source electrode 6-1 and a drain electrode 6-2 covering a part of the X-ray absorption layer 5, a semiconductor channel layer 4 disposed on the X-ray absorption layer 5 not covered by the source electrode 6-1 and the drain electrode 6-2 and covering the source electrode 6-1 and the drain electrode 6-2, a gate dielectric layer 3 disposed on the semiconductor channel layer 4, and a gate electrode 2 disposed on the gate dielectric layer 3. Specifically, a silicon wafer is used as a substrate 1, the substrate 1 is sequentially placed in acetone, an alcohol solvent and deionized water, the substrate is cleaned by ultrasonic for 5-20min, and N is used2Drying with a gun, and performing UV/ozone or O2Plasma treatment is carried out for 5-10 min. Preparing an X-ray absorption layer 5 on a substrate 1 by using a vacuum film-making process or a liquid-phase film-making process, depositing a layer of 10-100nm metal Au on the X-ray absorption layer 5 by using vacuum evaporation, wherein the Au layer is used as a source electrode 6-1 and a drain electrode 6-2 through a mask plate, a channel region is formed between the source electrode 6-1 and the drain electrode 6-2, depositing a semiconductor channel layer 4 on the X-ray absorption layer 5 by using the vacuum film-making process or the liquid-phase film-making process, and covering the source electrode 6-1 and the drain electrode 6-2, and sequentially preparing a grid dielectric layer 3 and a grid electrode 2 on the surface of the semiconductor channel layer 4 to finish the preparation of the field effect transistor X-ray detector.
In the present embodiment, as shown in fig. 4b, a source electrode 6-1 and a drain electrode 6-2 are disposed on a substrate 1 and cover a portion of the substrate 1, a semiconductor channel layer 4 is disposed on the substrate 1 not covered by the source electrode 6-1 and the drain electrode 6-2, and covers the source electrode 6-1 and the drain electrode 6-2, an X-ray absorption layer is disposed on the semiconductor channel layer 4, a gate dielectric layer 3 is disposed on the X-ray absorption layer 5, and a gate electrode 2 is disposed on the gate dielectric layer 3. Specifically, a silicon wafer is used as a substrate 1, the substrate 1 is sequentially placed in acetone, an alcohol solvent and deionized water, the substrate is cleaned by ultrasonic for 5-20min, and N is used2Drying with a gun, and performing UV/ozone or O2And (3) carrying out plasma treatment for 5-10min, and depositing a layer of 10-100nm metal Au on the substrate 1 through a mask plate by using vacuum evaporation to serve as a source electrode 6-1 and a drain electrode 6-2, wherein a channel region is formed between the source electrode 6-1 and the drain electrode 6-2. Using vacuum film-making processes or liquid phasesThe manufacturing process prepares the semiconductor channel layer 4 on the substrate 1 and covers the source electrode 6-1 and the drain electrode 6-2, deposits the X-ray absorption layer on the semiconductor channel layer 4 by using a vacuum manufacturing process or a liquid-phase manufacturing process, and sequentially prepares the grid dielectric layer 3 and the grid electrode 2 on the surface of the X-ray absorption layer 5 to finish the preparation of the field effect transistor X-ray detector.
EXAMPLE five
Fig. 5a and 5b are schematic diagrams of a fifth device structure of the X-ray detector of the present invention, fig. 5a includes a substrate 1 at the bottom of the X-ray detector; an X-ray layer 7 including an X-ray absorption layer 5, a source electrode 6-1 and a drain electrode 6-2, wherein a lower surface of the X-ray layer 7 is formed on an upper surface of the substrate 1, a lower surface of the X-ray absorption layer 5 is formed in a middle position of the upper surface of the substrate 1 and covers a part of the upper surface of the substrate 1, the source electrode 6-1 and the drain electrode 6-2 are located at left and right opposite positions of the substrate 1, and a lower surface of the source electrode 6-1 and a lower surface of the drain electrode 6-2 respectively cover a part of the left and right opposite positions of the upper surface of the substrate 1, which is not covered by the lower surface of the X-ray absorption layer 5; the semiconductor channel layer 4 is used for transmitting charges to generate channel current, the lower surface of the semiconductor channel layer 4 is manufactured on the upper surface of the X-ray layer 7, and the lower surface of the semiconductor channel layer 4 covers the whole upper surface of the X-ray layer 7; a gate dielectric layer 3 for insulation, wherein the lower surface of the gate dielectric layer 3 is manufactured on the upper surface of the semiconductor channel layer 4; the lower surface of the grid electrode 2 is manufactured on the upper surface of the grid dielectric layer 3; the semiconductor channel layer 4 and the X-ray layer 7 have a structure in which their relative positions are switched as shown in fig. 5 b: a semiconductor channel layer 4, wherein the lower surface of the semiconductor channel layer 4 is manufactured on the upper surface of the substrate 1; the lower surface of the X-ray layer 7 is manufactured on the upper surface of the semiconductor channel layer 4; the lower surface of the gate dielectric layer 3 is manufactured on the upper surface of the X-ray layer 7, and the lower surface of the gate dielectric layer 3 covers the whole upper surface of the X-ray layer 7.
In this embodiment, the source is electrically connected as shown in FIG. 5aThe electrode 1 and the drain electrode 2 cover a part of the substrate, the X-ray absorption layer 5 is disposed on the substrate 1 not covered by the source electrode 6-1 and the drain electrode 6-2, and covers the source electrode 6-1 and the drain electrode 6-2, the semiconductor channel layer 4 is disposed on the X-ray absorption layer 5, the gate dielectric layer 3 is disposed on the semiconductor channel layer 4, and the gate electrode 2 is disposed on the gate dielectric layer 3. Specifically, a silicon wafer is used as a substrate 1, the substrate 1 is sequentially placed in acetone, an alcohol solvent and deionized water, the substrate is cleaned by ultrasonic for 5-20min, and N is used2Drying with a gun, and performing UV/ozone or O2Plasma treatment is carried out for 5-10 min. A layer of 10-100nm metal Au is deposited on the substrate through a mask plate as a source electrode 6-1 and a drain electrode 6-2 by using vacuum evaporation, wherein a channel region is formed between the source electrode 6-1 and the drain electrode 6-2. Preparing an X-ray absorption layer 5 on a substrate 1 by using a vacuum film-making process or a liquid-phase film-making process, covering a source electrode 6-1 and a drain electrode 6-2, depositing a semiconductor channel layer 4 on the X-ray absorption layer 5 by using the vacuum film-making process or the liquid-phase film-making process, and sequentially preparing a grid dielectric layer 3 and a grid electrode 2 on the surface of the semiconductor channel layer 4 to finish the preparation of the field effect transistor X-ray detector.
In the present embodiment, as shown in fig. 5b, a semiconductor channel layer 4 is disposed on a substrate 1, a source electrode 6-1 and a drain electrode 6-2 cover a portion of the semiconductor channel layer 4, an X-ray absorption layer 5 is disposed on the semiconductor channel layer 4 not covered by the source electrode 6-1 and the drain electrode 6-2 and covers the source electrode 6-1 and the drain electrode 6-2, a gate dielectric layer 3 is disposed on the X-ray absorption layer 5, and a gate electrode 2 is disposed on the gate dielectric layer 3. Specifically, a silicon wafer is used as a substrate 1, the substrate 1 is sequentially placed in acetone, an alcohol solvent and deionized water, the substrate 1 is cleaned by ultrasonic for 5-20min, and N is used2Drying with a gun, and performing UV/ozone or O2Plasma processing for 5-10min, depositing the semiconductor channel layer 4 on the substrate by using a vacuum film-making process or a liquid phase film-making process, depositing a layer of 10-100nm metal Au on the semiconductor channel layer 4 through a mask plate by using a vacuum evaporation process to serve as a source electrode 6-1 and a drain electrode 6-2,a channel region is formed between the source electrode 6-1 and the drain electrode 6-2, the X-ray absorption layer 5 is deposited on the semiconductor channel layer 4 by using a vacuum film-making process or a liquid phase film-making process and covers the source electrode 6-1 and the drain electrode 6-2, the grid dielectric layer 3 is deposited on the X-ray absorption layer 5 by using the vacuum film-making process or the liquid phase film-making process, the grid electrode 2 is prepared on the grid dielectric layer 3 by using the vacuum film-making process or the liquid phase film-making process, and the preparation of the field effect transistor X-ray detector is completed.
EXAMPLE six
Fig. 6a and 6b are schematic diagrams of a sixth device structure of the X-ray detector of the present invention, and fig. 6b includes a substrate 1 at the bottom of the X-ray detector; the semiconductor channel layer 4 is used for transmitting charges to generate channel current, and the lower surface of the semiconductor channel layer 4 is manufactured on the upper surface of the substrate 1; an X-ray absorption layer 5, wherein the lower surface of the X-ray absorption layer 5 is manufactured on the upper surface of the semiconductor channel layer 4; a dielectric layer 9 including a gate dielectric layer 3, a source electrode 6-1 and a drain electrode 6-2, wherein a lower surface of the dielectric layer 9 is formed on an upper surface of the X-ray absorption layer 5, a lower surface of the gate dielectric layer 3 is formed in a middle position of the upper surface of the X-ray absorption layer 5 and covers a part of the upper surface of the X-ray absorption layer 5, the source electrode 6-1 and the drain electrode 6-2 are located at left and right opposite positions of the X-ray absorption layer 5, and a lower surface of the source electrode 6-1 and a lower surface of the drain electrode 6-2 respectively cover a part of the left and right opposite positions of the upper surface of the X-ray absorption layer 5 which is not covered by the lower surface of the gate dielectric layer 3; the lower surface of the gate electrode 2 is manufactured on the upper surface of the dielectric layer 9, and the whole lower surface of the gate electrode 2 just covers the upper surface of the gate dielectric layer 3 in the dielectric layer 9; the semiconductor channel layer 4 and the X-ray absorption layer 5 have a structure in which the relative positions of the two layers are switched as shown in fig. 6 a: the lower surface of the X-ray absorption layer 5 is manufactured on the upper surface of the substrate 1; the lower surface of the semiconductor channel layer 4 is manufactured on the upper surface of the X-ray absorption layer 5; and the lower surface of the dielectric layer 9 is manufactured on the upper surface of the semiconductor channel layer 4.
In the present embodiment, as shown in fig. 6a, an X-ray absorption layer 5 is disposed on a substrate 1, a semiconductor channel layer 4 is disposed on the X-ray absorption layer 5, a source electrode 6-1 and a drain electrode 6-2 cover a portion of the semiconductor channel layer 4, a gate dielectric layer 3 is disposed on the semiconductor channel layer 4 not covered by the source electrode 6-1 and the drain electrode 6-2, and covers the source electrode 6-1 and the drain electrode 6-2, and the gate electrode 2 is disposed on the gate dielectric layer 3. Specifically, a silicon wafer is used as a substrate 1, the substrate 1 is sequentially placed in acetone, an alcohol solvent and deionized water, the substrate is cleaned by ultrasonic for 5-20min, and N is used2Drying with a gun, and performing UV/ozone or O2Plasma processing for 5-10min, depositing an X-ray absorption layer 5 on the substrate 1 by using a vacuum film-making process or a liquid phase film-making process, depositing a semiconductor channel layer 4 on the X-ray absorption layer 5 by using a vacuum film-making process or a liquid phase film-making process, performing vacuum evaporation, a layer of metal Au with the thickness of 10-100nm is deposited on the substrate through a mask plate to be used as a source electrode 6-1 and a drain electrode 6-2, wherein a channel region is formed between the source electrode 6-1 and the drain electrode 6-2, the gate dielectric layer 3 is prepared on the channel semiconductor 4 by using a vacuum film-making process or a liquid-phase film-making process, and covering the source electrode 6-1 and the drain electrode 6-2, and preparing the gate electrode 2 on the gate dielectric layer 3 by using a vacuum film-making process or a liquid-phase film-making process to finish the preparation of the field effect transistor X-ray detector.
In this embodiment, as shown in fig. 6b, a semiconductor channel layer 4 is disposed on a substrate 1, an X-ray absorption layer 5 is disposed on the semiconductor channel layer 4, a source electrode 6-1 and a drain electrode 6-2 cover a part of the X-ray absorption layer 5, a gate dielectric layer 3 is disposed on the X-ray absorption layer 5 not covered by the source electrode 6-1 and the drain electrode 6-2 and covers the source electrode 6-1 and the drain electrode 6-2, and the gate electrode 2 is disposed on the gate dielectric layer 3, specifically, a silicon wafer is used as the substrate 1, the substrate 1 is sequentially placed in acetone, an alcohol solvent and deionized water, and the substrate 1 is cleaned by ultrasonic for 5-20min, and N is used to clean the substrate 12Drying with a gun, and performing UV/ozone or O2Treating with plasma for 5-10minDepositing a semiconductor channel layer 4 on a substrate 1 by a vacuum film-making process or a liquid-phase film-making process, depositing an X-ray absorption layer 5 on the semiconductor channel layer 4 by the vacuum film-making process or the liquid-phase film-making process, depositing the X-ray absorption layer on the semiconductor channel layer by a vacuum evaporation process, a layer of metal Au with the thickness of 10-100nm is deposited on the substrate 1 through a mask plate to be used as a source electrode 6-1 and a drain electrode 6-2, wherein a channel region is formed between the source electrode 6-1 and the drain electrode 6-2, the gate dielectric layer 3 is prepared on the X-ray absorption layer 5 by using a vacuum film-making process or a liquid-phase film-making process, and covering the source electrode 6-1 and the drain electrode 6-2, and preparing the gate electrode 2 on the gate dielectric layer 3 by using a vacuum film-making process or a liquid-phase film-making process to finish the preparation of the field effect transistor X-ray detector.
In the above embodiments, the material of the X-ray absorption layer 5 is a bulk heterojunction composite material or a layer heterojunction composite material, and specifically is composed of one or a mixture of several materials with high atomic number, including: perovskite material having a chemical formula of ABX3 type, selenium (Se), silicon (Si), germanium (Ge), gallium arsenide (GaAs), lead sulfide (PbS), cadmium telluride (CdTe), cadmium zinc telluride (CdZnTe), wherein A in the above-mentioned ABX3 formula may represent cesium (Cs), methylamine (CH3NH3), methyl ether (NH2CHNH2), B represents lead (Pb), tin (Sn), copper (Cu), nickel (Ni), bismuth (Bi), cobalt (Co), iron (Fe), manganese (Mn), chromium (Cr), cadmium (Cd), germanium (Ge), ytterbium (Yb), X represents a single halogen element or a combination of different elements IxBr (1-X), IxCl (1-X), BrxCl (1-X), (0.2. ltoreq. x.ltoreq.1), preferably, the same effect may be achieved by replacing the X-rays with gamma-rays of higher energy, preferably selected from the group consisting of the commonly used alcoholic solvents including isopropanol or ethanol, the thickness of the gate electrode 2 is 30-100nm, the thickness of the gate dielectric layer 3 is 10-1000 nm, the thickness of the channel semiconductor layer 4 is 1-100nm, the thickness of the source electrode 6-1 and the drain electrode 6-2 is 50-100nm, and the thickness of the X-ray absorption layer 5 is 40-200 nm. Preferably, the substrate 1 is a rigid substrate or a flexible substrate, the rigid substrate includes a silicon wafer, glass, quartz, and sapphire, and the flexible substrate is a substrate material with mechanical flexibility, and includes polyethylene terephthalate (PET), polyethylene naphthalate (PEN), Polyimide (PI), flexible glass, thin metal, and paper substrate. Examples of the insulating layerThe film forming mode is that three layers of insulating layers are prepared by a chemical vapor deposition method, the vacuum film forming process is thermal evaporation, optionally, the vacuum evaporation process is magnetron sputtering, electron beam evaporation and atomic layer deposition, the liquid-phase film-making process is spin coating, screen printing, ink-jet printing, scraper coating and extrusion coating, the material of the semiconductor channel layer 4 comprises one or more of an organic semiconductor and an inorganic semiconductor, wherein the organic semiconductor comprises poly-3-hexylthiophene (P3HT), Pentacene (Pentacene), polyisoprene derivatives containing siloxane, polythiophene semiconductor series, fullerene semiconductor series, metal organic semiconductor, the inorganic semiconductor comprises Si, Ge, III-V compound semiconductor, two-dimensional semiconductor material, preferably, the semiconductor channel layer 4 is a P-type semiconductor or an n-type semiconductor. Preferably, the X-ray absorption material is a perovskite thin film, a perovskite quantum dot and other semiconductor quantum dot materials except for the perovskite quantum dot, and the perovskite thin film and the perovskite quantum dot materials are CsPbI3、CsPbBr3、CsPbCl3、CsPbIxBry、CsPbBrxClyThe other semiconductor quantum dot materials except the perovskite quantum dots are PbS and CdTe quantum dots, the gate electrode 2 material comprises gold, silver, copper, aluminum, indium, nickel, chromium and titanium, the non-metal electrode material comprises a heavily doped semiconductor, a carbon nanotube, graphene, a conductive polymer and a conductive metal oxide, preferably, the gate electrode 2 is heavily doped Si, the gate dielectric layer 3 at least comprises one or more of an inorganic insulating material and an organic insulating material, and the inorganic dielectric material comprises SiO2、Al2O3、HfO2、ZrO2、BN、Ta2O5One or more of the above; the organic insulating material comprises one or more of PMMA, PS, PVA, PVP and CYTOP, preferably, the gate dielectric layer 3 is SiO2The thickness is 100-300 nm. Optionally, the gate dielectric layer 3 may also be Al2O3、HfO2PS and PMMA, the source electrode 6-1 and the drain electrode 6-2 may be a metal material commonly used in the art, and those skilled in the art may use organic materialsThe matching of the HOMO or LUMO energy level of the semiconductor to the work function of the metal is chosen.
In this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process or method that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, or apparatus.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (10)
1. An X-ray detector based on a field effect transistor structure, characterized in that the X-ray detector structure comprises:
the substrate is positioned at the bottom of the X-ray detector;
the lower surface of the grid electrode is manufactured on the upper surface of the substrate;
the lower surface of the grid dielectric layer is manufactured on the upper surface of the grid electrode;
the lower surface of the semiconductor channel layer is manufactured on the upper surface of the grid dielectric layer;
the X-ray layer is manufactured on the upper surface of the semiconductor channel layer, the X-ray layer comprises an X-ray absorption layer, a source electrode and a drain electrode, the lower surface of the X-ray absorption layer is manufactured in the middle of the upper surface of the semiconductor channel layer and covers a part of the upper surface of the semiconductor channel layer, the source electrode and the drain electrode are located at left and right opposite positions of the X-ray absorption layer, and the lower surface of the source electrode and the lower surface of the drain electrode respectively cover the part, which is not covered by the lower surface of the X-ray absorption layer, of the left and right opposite positions of the upper surface of the semiconductor channel layer;
the semiconductor channel layer and the X-ray layer have the following structure that the relative positions of the semiconductor channel layer and the X-ray layer are exchanged:
the lower surface of the X-ray layer is manufactured on the upper surface of the grid dielectric layer;
and the lower surface of the semiconductor channel layer is manufactured on the upper surface of the X-ray layer and covers the whole upper surface of the X-ray layer.
2. An X-ray detector based on a field effect transistor structure, characterized in that the X-ray detector structure comprises:
the substrate is positioned at the bottom of the X-ray detector;
the lower surface of the grid electrode is manufactured on the upper surface of the substrate;
the lower surface of the grid dielectric layer is manufactured on the upper surface of the grid electrode;
the lower surface of the semiconductor channel layer is manufactured on the upper surface of the grid dielectric layer;
the lower surface of the X-ray absorption layer is manufactured on the upper surface of the semiconductor channel layer;
the lower surface of the source electrode and the lower surface of the drain electrode are manufactured on the upper surface of the X-ray absorption layer, and the source electrode is not in contact with the drain electrode;
the semiconductor channel layer and the X-ray absorption layer have the following structure that the relative positions of the semiconductor channel layer and the X-ray absorption layer are exchanged:
the lower surface of the X-ray absorption layer is manufactured on the upper surface of the grid dielectric layer;
the lower surface of the semiconductor channel layer is manufactured on the upper surface of the X-ray absorption layer;
and the lower surface of the source electrode and the lower surface of the drain electrode are manufactured on the upper surface of the semiconductor channel layer.
3. An X-ray detector based on a field effect transistor structure, characterized in that the X-ray detector structure comprises:
the substrate is positioned at the bottom of the X-ray detector;
the lower surface of the grid electrode is manufactured on the upper surface of the substrate;
the lower surface of the grid dielectric layer is manufactured on the upper surface of the grid electrode;
the semiconductor layer comprises a semiconductor channel layer, a source electrode and a drain electrode, wherein the lower surface of the semiconductor channel layer is manufactured in the middle of the upper surface of the grid dielectric layer and covers a part of the upper surface of the grid dielectric layer, the source electrode and the drain electrode are positioned at the left and right opposite positions of the semiconductor channel layer, and the lower surface of the source electrode and the lower surface of the drain electrode respectively cover the parts of the left and right opposite positions of the upper surface of the grid dielectric layer, which are not covered by the lower surface of the semiconductor channel layer;
the lower surface of the X-ray absorption layer is manufactured on the upper surface of the semiconductor layer, and the lower surface of the X-ray absorption layer covers the whole upper surface of the semiconductor layer;
the semiconductor layer and the X-ray absorption layer have the following structure that the relative positions of the semiconductor layer and the X-ray absorption layer are exchanged:
the lower surface of the X-ray absorption layer is manufactured on the upper surface of the grid dielectric layer;
and the lower surface of the semiconductor layer is manufactured on the upper surface of the X-ray absorption layer.
4. An X-ray detector based on a field effect transistor structure, characterized in that the X-ray detector structure comprises:
the substrate is positioned at the bottom of the X-ray detector;
the semiconductor layer comprises a semiconductor channel layer, a source electrode and a drain electrode, wherein the lower surface of the semiconductor channel layer is manufactured in the middle of the upper surface of the substrate and covers a part of the upper surface of the substrate, the source electrode and the drain electrode are positioned at the left and right opposite positions of the semiconductor channel layer, and the lower surface of the source electrode and the lower surface of the drain electrode respectively cover the part of the left and right opposite positions of the upper surface of the substrate, which is not covered by the lower surface of the semiconductor channel layer;
the lower surface of the X-ray absorption layer is manufactured on the upper surface of the semiconductor layer, and the lower surface of the X-ray absorption layer covers the whole upper surface of the semiconductor layer;
the lower surface of the grid dielectric layer is manufactured on the upper surface of the X-ray absorption layer;
the lower surface of the grid electrode is manufactured on the upper surface of the grid dielectric layer;
the semiconductor layer and the X-ray absorption layer have the following structure that the relative positions of the semiconductor layer and the X-ray absorption layer are exchanged:
the lower surface of the X-ray absorption layer is manufactured on the upper surface of the substrate;
the lower surface of the semiconductor layer is manufactured on the upper surface of the X-ray absorption layer;
and the lower surface of the grid dielectric layer is manufactured on the upper surface of the semiconductor layer, and the lower surface of the grid dielectric layer covers the whole upper surface of the semiconductor layer.
5. An X-ray detector based on a field effect transistor structure, characterized in that the X-ray detector structure comprises:
the substrate is positioned at the bottom of the X-ray detector;
the X-ray layer is manufactured on the upper surface of the substrate, the X-ray layer comprises an X-ray absorption layer, a source electrode and a drain electrode, the lower surface of the X-ray absorption layer is manufactured in the middle of the upper surface of the substrate and covers a part of the upper surface of the substrate, the source electrode and the drain electrode are located at left and right opposite positions of the substrate, and the lower surface of the source electrode and the lower surface of the drain electrode respectively cover the part, which is not covered by the lower surface of the X-ray absorption layer, of the left and right opposite positions of the upper surface of the substrate;
the lower surface of the semiconductor channel layer is manufactured on the upper surface of the X-ray layer, and the lower surface of the semiconductor channel layer covers the whole upper surface of the X-ray layer;
the lower surface of the grid dielectric layer is manufactured on the upper surface of the semiconductor channel layer;
the lower surface of the grid electrode is manufactured on the upper surface of the grid dielectric layer;
the semiconductor channel layer and the X-ray layer have the following structure that the relative positions of the semiconductor channel layer and the X-ray layer are exchanged:
the lower surface of the semiconductor channel layer is manufactured on the upper surface of the substrate;
the lower surface of the X-ray layer is manufactured on the upper surface of the semiconductor channel layer;
and the lower surface of the grid dielectric layer is manufactured on the upper surface of the X-ray layer, and the lower surface of the grid dielectric layer covers the whole upper surface of the X-ray layer.
6. An X-ray detector based on a field effect transistor structure, characterized in that the X-ray detector structure comprises:
the substrate is positioned at the bottom of the X-ray detector;
the lower surface of the semiconductor channel layer is manufactured on the upper surface of the substrate;
the lower surface of the X-ray absorption layer is manufactured on the upper surface of the semiconductor channel layer;
the lower surface of the dielectric layer is manufactured on the upper surface of the X-ray absorption layer, the dielectric layer comprises a grid dielectric layer, a source electrode and a drain electrode, the lower surface of the grid dielectric layer is manufactured in the middle of the upper surface of the X-ray absorption layer and covers one part of the upper surface of the X-ray absorption layer, the source electrode and the drain electrode are located at the left and right opposite positions of the X-ray absorption layer, and the lower surface of the source electrode and the lower surface of the drain electrode respectively cover the parts of the left and right opposite positions of the upper surface of the X-ray absorption layer, which are not covered by the lower surface of the grid dielectric layer;
the lower surface of the grid electrode is manufactured on the upper surface of the dielectric layer, and the lower surface of the grid electrode completely covers the upper surface of the grid dielectric layer in the dielectric layer;
the semiconductor channel layer and the X-ray absorption layer have the following structure that the relative positions of the semiconductor channel layer and the X-ray absorption layer are exchanged:
the lower surface of the X-ray absorption layer is manufactured on the upper surface of the substrate;
the lower surface of the semiconductor channel layer is manufactured on the upper surface of the X-ray absorption layer;
and the lower surface of the dielectric layer is manufactured on the upper surface of the semiconductor channel layer.
7. The field effect transistor structure based X-ray detector according to any one of claims 1 to 6, wherein the substrate is a rigid substrate selected from one of silicon, SiC, GaN, quartz, sapphire, glass, or a flexible substrate selected from one of polyethylene terephthalate, polyethylene naphthalate, polyimide, flexible glass, thin metal, paper substrate.
8. The field effect transistor structure based X-ray detector of any one of claims 1 to 6, wherein the material of the X-ray absorbing layer is a bulk heterojunction composite or a layer heterojunction composite.
9. The FET structure-based X-ray detector of any one of claims 1-6, wherein gamma rays are used in place of the X-rays.
10. A method for preparing an X-ray detector based on a field effect transistor structure is characterized by comprising the following steps:
(1) purifying the substrate: using a silicon wafer as a substrate, sequentially placing the substrate in acetone, alcohol solvent and deionized water, respectively performing ultrasonic cleaning for 5-20min, and cleaning with N2Drying with a gun, and performing UV/ozone or O2Plasma treatment for 5-10 min;
(2) preparing a grid electrode: depositing a conductive metal layer or a conductive non-metal layer on the surface to form a gate electrode;
(3) preparing a gate dielectric layer: depositing at least one insulating layer by adopting an insulating layer film forming mode to form a gate dielectric layer;
(4) preparing a channel semiconductor layer: preparing a semiconductor channel layer by using a vacuum film-making process or a liquid-phase film-making process;
(5) preparing a source electrode and a drain electrode: depositing a layer of 10-100nm metal Au as a source electrode and a drain electrode by using vacuum evaporation through a mask plate, wherein a channel region is formed between the source electrode and the drain electrode;
(6) preparation of the X-ray absorbing layer: the X-ray absorption layer is prepared by a vacuum film-making process or a liquid-phase film-making process.
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