CN117153837A

CN117153837A - Electronic device and method for manufacturing the same

Info

Publication number: CN117153837A
Application number: CN202310135451.5A
Authority: CN
Inventors: 纪仁海; 曾嘉平
Original assignee: Innolux Display Corp
Current assignee: Innolux Corp
Priority date: 2022-06-01
Filing date: 2023-02-20
Publication date: 2023-12-01

Abstract

The present disclosure provides an electronic device and a method for manufacturing the same. The electronic device comprises a flexible substrate, an adhesive layer, a metal layer, a driving unit and a modulation unit. The adhesive layer is arranged on the flexible substrate. The metal layer is arranged on the adhesive layer. The driving unit is arranged on the adhesive layer. The modulation unit is arranged on the adhesive layer. The manufacturing method of the electronic device comprises the following steps: providing a bearing substrate; forming a first metal layer on a bearing substrate; providing a flexible substrate and combining the flexible substrate and a bearing substrate; removing the bearing substrate; and providing a modulation unit and arranging the modulation unit on the flexible substrate. The electronic device and the manufacturing method thereof can enable the electronic device with the modulation unit to be applied to a non-planar structure.

Description

Electronic device and method for manufacturing the same

Technical Field

The present disclosure relates to an electronic device and a method for manufacturing the same, and more particularly, to an electronic device having a modulation unit and a method for manufacturing the same, which can be applied to a non-planar structure.

Background

Electronic devices or spliced electronic devices have been widely used in various fields such as communications, display, automotive, or aviation. With the rapid development of electronic devices, the electronic devices are developed towards light and thin, so that the reliability or quality requirements of the electronic devices are higher.

Disclosure of Invention

The present disclosure provides an electronic device and a method for manufacturing the same, which can apply the electronic device with a modulation unit to a non-planar structure, wherein the non-planar structure includes, but is not limited to, windows, buildings, utility poles, automobile roofs, and the like.

According to an embodiment of the disclosure, an electronic device includes a flexible substrate, an adhesive layer, a metal layer, a driving unit, and a modulation unit. The adhesive layer is arranged on the flexible substrate. The metal layer is arranged on the adhesive layer. The driving unit is arranged on the adhesive layer. The modulation unit is arranged on the adhesive layer.

According to an embodiment of the disclosure, a method for manufacturing an electronic device includes the steps of: providing a bearing substrate; forming a first metal layer on a bearing substrate; providing a flexible substrate and combining the flexible substrate and a bearing substrate; removing the bearing substrate; and providing a modulation unit and arranging the modulation unit on the flexible substrate.

Drawings

The accompanying drawings are included to provide a further understanding of the disclosure, and are incorporated in and constitute a part of this specification. The accompanying drawings illustrate embodiments of the present disclosure and, together with the description, serve to explain the principles of the present disclosure.

Fig. 1A to 1D are schematic cross-sectional views illustrating a method for manufacturing an electronic device according to a first embodiment of the disclosure;

fig. 2A to 2E are schematic cross-sectional views illustrating a manufacturing method of an electronic device according to a second embodiment of the disclosure;

fig. 3A to 3E are schematic cross-sectional views illustrating a manufacturing method of an electronic device according to a third embodiment of the disclosure.

Description of the reference numerals

100. 100a, 100b: an electronic device;

110: a carrier substrate;

120. 120a, 120b: a protective layer;

130. 130a, 130b: a metal layer;

131. 131a, 131b: an opening;

140: a driving unit;

150. 150a, 150b: an insulating layer;

160. 160a, 160b: a metal layer;

161. 161a, 161b: an opening;

170: an adhesive layer;

180. 180b, 185: a flexible substrate;

190: a modulation unit;

191: a first pad;

192: a second pad;

210: a primer;

IL: an insulating layer;

o1: a first opening;

o2, O2a: a second opening;

p1, P2: a conductive pad;

RL: a release layer;

s1, S2: a bonding pad;

SL: a seed layer;

SL1: an opening;

t1, T2, T3, T4: thickness;

TPF1, TPF2: a temporary membrane;

z: direction.

Detailed Description

The present disclosure may be understood by referring to the following detailed description in conjunction with the accompanying drawings, it being noted that, in order to facilitate the understanding of the reader and for the sake of brevity of the drawings, various drawings in the present disclosure depict only a portion of an electronic device, and specific elements in the drawings are not drawn to actual scale. Furthermore, the number and size of the elements in the drawings are illustrative only and are not intended to limit the scope of the present disclosure.

In the following description and in the claims, the terms "include" and "comprise" are used in an open-ended fashion, and thus should be interpreted to mean "include, but not limited to …".

It will be understood that when an element or film is referred to as being "on" or "connected to" another element or film, it can be directly on or connected to the other element or film or intervening elements or films may be present therebetween (not directly). In contrast, when an element is referred to as being "directly on" or "directly connected to" another element or film, there are no intervening elements or films present therebetween.

Although the terms "first", "second", "third" … may be used to describe various constituent elements, the constituent elements are not limited by this term. This term is used only to distinguish a single component element from other component elements within the specification. The same terms may not be used in the claims but instead the first, second, third … are substituted for the order in which the elements were recited in the claims. Thus, in the following description, a first component may be a second component in the claims.

As used herein, the terms "about," "approximately," "substantially," and "approximately" generally mean within 10%, or within 5%, or within 3%, or within 2%, or within 1%, or within 0.5% of a given value or range. The amounts given herein are about amounts, i.e., where "about", "substantially" and "approximately" are not specifically recited, the meaning of "about", "substantially" and "approximately" may still be implied.

In some embodiments of the disclosure, terms such as "connected," "interconnected," and the like, with respect to joining, connecting, and the like, may refer to two structures being in direct contact, or may refer to two structures not being in direct contact, with other structures being disposed between the two structures, unless otherwise specified. And the term coupled, connected, may also include situations where both structures are movable, or where both structures are fixed. Furthermore, the term "coupled" includes any direct or indirect electrical connection.

In some embodiments of the present disclosure, the area, width, thickness, or height of each element, or the distance or spacing between elements, may be measured using an optical microscope (optical microscopy, OM), scanning electron microscope (scanning electron microscope, SEM), film thickness profilometer (α -step), ellipsometer, or other suitable means. In detail, according to some embodiments, a scanning electron microscope may be used to obtain a cross-sectional structure image including elements to be measured, and to measure an area, a width, a thickness, or a height of each element, or a distance or a pitch between the elements.

The electronic device of the present disclosure may include a display apparatus, an antenna device, a sensing device, or a stitching device, but is not limited thereto. The electronic device may be a bendable or flexible electronic device. The electronic device may for example comprise a liquid crystal (liquid crystal), a light emitting diode; the light emitting diode may include, for example, an organic light emitting diode (organic light emitting diode, OLED), a sub-millimeter light emitting diode (mini LED), a micro LED, or a Quantum Dot (QD) which may be, for example, a QLED, QDLED), fluorescence (fluorescence), phosphorescence (phosphorescence), or other suitable materials, and the materials may be arranged and combined at random, but not limited to these. The display device may be a non-self-luminous type display device or a self-luminous type display device. The Antenna arrangement may for example comprise a frequency selective surface (Frequency Selective Surface, FSS), a radio frequency Filter (RF-Filter), a Polarizer, a Resonator or an Antenna or the like. The antenna device may be, for example, a liquid crystal antenna, but is not limited thereto. The splicing device can be, for example, a display splicing device or an antenna splicing device, but is not limited to this. It should be noted that the electronic device may be any of the above arrangements, but is not limited thereto. Furthermore, the shape of the electronic device may be rectangular, circular, polygonal, a shape with curved edges, or other suitable shape. The electronic device may have a driving system, a control system, a light source system, a shelving system …, and the like, to support a display apparatus, an antenna device, or a splicing device. The disclosure will be described in the following with reference to the electronic device, but the disclosure is not limited thereto.

It is to be understood that the following exemplary embodiments may be substituted, rearranged, and mixed for the features of several different embodiments without departing from the spirit of the disclosure to accomplish other embodiments. Features of the embodiments can be mixed and matched at will without departing from the spirit of the invention or conflicting.

Reference will now be made in detail to the exemplary embodiments of the present disclosure, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts.

Fig. 1A to 1D are schematic cross-sectional views illustrating a method for manufacturing an electronic device according to a first embodiment of the disclosure. The electronic device 100 of the present embodiment has a flexible or bendable property, and the manufacturing method of the electronic device 100 of the present embodiment may include the following steps:

first, referring to fig. 1A, a carrier substrate 110 is provided, a release layer RL is formed on the carrier substrate 110, and a passivation layer 120 is formed on the carrier substrate 110. The release layer RL is disposed between the protective layer 120 and the carrier substrate 110, and the release layer RL and the carrier substrate 110 can be removed in a subsequent step. In the present embodiment, the carrier substrate 110 may include a hard substrate, a soft substrate, or a combination thereof, and for example, the material of the carrier substrate 110 may include glass, quartz, sapphire (sapphire), ceramic, polycarbonate (PC), polyimide (PI), polyethylene terephthalate (polyethylene terephthalate, PET), other suitable substrate materials, or a combination thereof, but is not limited thereto. The material of the release layer RL may include, but is not limited to, an adhesive material that loses adhesive properties when heated or irradiated by ultraviolet light. The protective layer 120 may have a single-layer structure or a multi-layer structure, and may include, for example, an organic material, an inorganic material, or a combination of the foregoing, but is not limited thereto. In some embodiments, a release layer may be optionally disposed between the protective layer and the carrier substrate.

Next, referring to fig. 1A, a metal layer 130 is formed on a carrier substrate 110, a driving unit 140 is disposed on the carrier substrate 110, and an insulating layer 150 is formed on the carrier substrate 110. The metal layer 130 is disposed on the protection layer 120, and the metal layer 130 has an opening 131 exposing a portion of the protection layer 120. The driving unit 140 is disposed on the metal layer 130 and in the opening 131 of the metal layer 130, and the driving unit 140 can be electrically connected to the metal layer 130. In the present embodiment, the driving unit 140 may include a transistor (TFT), an integrated circuit (integrated circuit, IC), or a combination of the foregoing, but is not limited thereto. In the present embodiment, the driving unit 140 is disposed on the carrier substrate 110, for example, the driving unit 140 may be fabricated on the carrier substrate 110 by using a thin film yellow light process (thin film photolithography process), but is not limited thereto, and in some embodiments, the fabricated driving unit 140 may be bonded on the carrier substrate 110. The insulating layer 150 is disposed on the driving unit 140, and the insulating layer 150 may cover the driving unit 140, the metal layer 130, and the protection layer 120. The insulating layer 150 may have a single-layer structure or a multi-layer structure, and may include, for example, an organic material, an inorganic material, or a combination of the foregoing, but is not limited thereto.

Then, referring to fig. 1B, after the driving unit 140 is disposed, a metal layer 160 is formed on the carrier substrate 110. The metal layer 160 is disposed on the insulating layer 150, so that the insulating layer 150 is located between the metal layer 160 and the driving unit 140. The metal layer 160 includes an opening 161, and the opening 161 may expose a portion of the insulating layer 150. In the present embodiment, the material of the metal layer 160 may include aluminum, molybdenum, copper, silver, other suitable metal materials, or a combination of the foregoing, but is not limited thereto. In the present embodiment, the thickness T1 of the metal layer 160 may be greater than 0.5 micrometers (μm) (i.e., T >0.5 μm), but is not limited thereto. The thickness T1 is, for example, a thickness of the metal layer 160 measured along a normal direction of the carrier substrate 110 or a normal direction (i.e., a direction Z) of the electronic device 100. When the thickness T1 of the metal layer 160 is less than 0.5 μm, the conductivity of the metal layer 160 is degraded and the impedance is increased, the skin effect (skin effect) is generated on the high-frequency signal, which leads to signal loss, or the heat dissipation effect of the electronic device 100 is degraded.

Next, referring to fig. 1B, an adhesive layer 170 is formed on the carrier substrate 110, a flexible substrate (flexible substrate) 180 is provided, and the flexible substrate 180 and the carrier substrate 110 are combined. The adhesive layer 170 is disposed on the metal layer 160 and in the opening 161 of the metal layer 160, the flexible substrate 180 is disposed on the adhesive layer 170, and the flexible substrate 180 can be bonded to the carrier substrate 110 through the adhesive layer 170. In the present embodiment, the material of the flexible substrate 180 may include polycarbonate, polyimide, polyethylene terephthalate, other suitable flexible substrate materials, or a combination of the foregoing, but is not limited thereto.

Then, referring to fig. 1C, the carrier substrate 110 is removed, and a first opening O1 and a second opening O2 are formed. In this embodiment, the release layer RL and the carrier substrate 110 are removed, for example, by laser lift-off, to expose the passivation layer 120. In this embodiment, for example, a laser drilling (laser drilling) is used to drill the passivation layer 120 and the insulating layer 150 to form the first opening O1 and the second opening O2. Wherein, the first opening O1 may expose the metal layer 130, and the second opening O2 may expose the metal layer 160.

Then, referring to fig. 1D, a conductive pad P1 and a conductive pad P2 are formed in the first opening O1 and the second opening O2, respectively. The conductive pad P1 may be electrically connected to the metal layer 130, and the conductive pad P2 may be electrically connected to the metal layer 160. In the present embodiment, the materials of the conductive pads P1 and P2 may include nickel-plated gold (electroless nickel immersion gold, ENIG), other suitable conductive materials, or a combination thereof, but are not limited thereto.

Next, referring to fig. 1D, a modulation unit 190 is provided, and the modulation unit 190 is disposed on the flexible substrate 180. The modulation unit 190 may be disposed corresponding to the opening 161 of the metal layer 160, and the modulation unit 190 may overlap the opening 161 of the metal layer 160 in a normal direction (i.e., a direction Z) of the electronic device 100. The modulation unit 190 may be bonded to the conductive pads P1 and P2 through pads (holders) S1 and S2, respectively. The modulation unit 190 includes a first pad 191 and a second pad 192. The first pads 191 may be electrically connected to the driving unit 140 through the pads S1, the conductive pads P1 and the metal layer 130, and the second pads 192 may be electrically connected to the metal layer 160 through the pads S2 and the conductive pads P2.

In the present embodiment, the modulation unit 190 is disposed on the flexible substrate 180 by, for example, bonding the fabricated modulation unit 190 to the flexible substrate 180, but not limited thereto, and in some embodiments, the modulation unit 190 may be fabricated on the flexible substrate 180 by using a thin film yellow light process.

In the present embodiment, the modulation unit 190 may be used to modulate at least one of phase, amplitude and frequency, but is not limited thereto. In this embodiment, the modulation unit 190 may include an integrated circuit, a transistor, a silicon controlled rectifier (silicon controlled rectifiers), a valve (valves), a thin film transistor, a capacitor, an inductor, a variable capacitor, a filter, a resistor, a diode, a light emitting diode, a microelectromechanical system (micro electro mechanical systems, MEMS), a liquid crystal chip, a connector, an interposer (interposer), a redistribution layer (redistribution layer, RDL) element, or a combination thereof, but is not limited thereto.

Next, referring to fig. 1D, an underfill (underfill) 210 is formed between the modulation unit 190 and the passivation layer 120, so that the underfill 210 can encapsulate and protect the bonding pad S1, the bonding pad S2, the first bonding pad 191 and the second bonding pad 192. In some embodiments, the packaging process (molding) of the electronic device 100 may also be optionally continued. Thus, the electronic device 100 of the present embodiment has been substantially manufactured.

In this embodiment, since the protection layer 120, the insulating layer 150, the metal layer 160 and the flexible substrate 180 have different coefficients of thermal expansion (coefficient of thermal expansion, CTE), and are prone to warpage (warp) caused by a high temperature process (e.g., a process for manufacturing the driving unit 140) and cannot be performed during the manufacturing process, the manufacturing method of the electronic device 100 of the present embodiment can reduce the warpage problem by performing the step of providing the driving unit 140 first, and then performing the steps of forming the insulating layer 150, forming the metal layer 160 and providing the flexible substrate 180.

As mentioned above, the electronic device 100 of the present embodiment may include the flexible substrate 180, the adhesive layer 170, the metal layer 160, the driving unit 140 and the modulation unit 190. Wherein, the adhesive layer 170 is disposed on the flexible substrate 180. The metal layer 160 is disposed on the adhesive layer 170. The driving unit 140 is disposed on the adhesive layer 170. The modulation unit 190 is disposed on the adhesive layer 170.

Other examples will be listed below as illustration. It should be noted that the following embodiments use the element numbers and part of the content of the foregoing embodiments, where the same numbers are used to denote the same or similar elements, and descriptions of the same technical content are omitted. For the description of the omitted parts, reference is made to the foregoing embodiments, and the following embodiments are not repeated.

Fig. 2A to 2E are schematic cross-sectional views illustrating a manufacturing method of an electronic device according to a second embodiment of the disclosure. The second embodiment shown in fig. 2A to 2E is similar to the first embodiment shown in fig. 1A to 1D, and therefore, like elements are denoted by like reference numerals, and the detailed description thereof will be omitted. The electronic device 100a of the present embodiment has a flexible or bendable characteristic, and the manufacturing method of the electronic device 100a of the present embodiment may include the following steps:

first, referring to fig. 2A, a carrier substrate 110 is provided, a release layer RL is formed on the carrier substrate 110, and a seed layer SL is formed on the release layer RL. The release layer RL is disposed between the seed layer SL and the carrier substrate 110, and the release layer RL and the carrier substrate 110 can be removed together in a subsequent step. In some embodiments, a release layer may also be optionally provided between the seed layer and the carrier substrate. In the present embodiment, the seed layer SL includes an opening SL1, and the opening SL1 may expose a portion of the release layer RL. The thickness T2 of the seed layer SL may be, for example, less than 0.5 micrometers, but is not limited thereto. The thickness T2 is, for example, a thickness of the seed layer SL measured along a normal direction of the carrier substrate 110 or a normal direction (i.e., a direction Z) of the electronic device 100a. In this embodiment, the material of the seed layer SL may include titanium, copper, other suitable metallic materials, or a combination of the foregoing.

Next, referring to fig. 2A, an insulating layer 150a is formed on the carrier substrate 110, a metal layer 130a is formed on the carrier substrate 110, a driving unit 140 is disposed on the carrier substrate 110, and a passivation layer 120a is formed on the carrier substrate 110. The insulating layer 150a is disposed on the seed layer SL and within the opening SL1 of the seed layer SL. The metal layer 130a is disposed on the insulating layer 150a, and the metal layer 130a has an opening 131a exposing a portion of the insulating layer 150a. The driving unit 140 is disposed on the metal layer 130a and in the opening 131a of the metal layer 130a, and the driving unit 140 can be electrically connected to the metal layer 130a. The protection layer 120a is disposed on the driving unit 140, and the protection layer 120a may cover the driving unit 140, the metal layer 130a, and the insulating layer 150a.

Then, referring to fig. 2B, a temporary film (temporary protective film) TPF1 is formed on the carrier substrate 110, and the release layer RL and the carrier substrate 110 are removed to expose the seed layer SL. The temporary film TPF1 is disposed on the protective layer 120a, so that the structure after the release layer RL and the carrier substrate 110 are removed is not rolled up to facilitate subsequent processing. In the present embodiment, the temporary film TPF1 is, for example, a substrate containing a weakly tacky adhesive layer, and the material of the substrate may include, for example, polyvinyl chloride (PVC), polyimide, or polyethylene terephthalate, but is not limited thereto.

Then, referring to fig. 2C, after the driving unit 140 is disposed, a metal layer 160a is formed on the temporary film TPF1, an adhesive layer 170 is formed on the temporary film TPF1, a flexible substrate 180 is provided, and the flexible substrate 180 and the temporary film TPF1 are combined. The metal layer 160a is disposed on the seed layer SL, so that the insulating layer 150a is located between the driving unit 140 and the metal layer 160a. The metal layer 160a includes an opening 161a, the opening 161a may expose a portion of the insulating layer 150a, and the opening 161a may be disposed corresponding to the opening SL1 overlapping the seed layer SL in a normal direction (i.e., a direction Z) of the electronic device 100a. The sum of the thickness of the metal layer 160a and the thickness of the seed layer SL is a thickness T3, and the thickness T3 may be, for example, greater than 0.5 μm, but is not limited thereto. The thickness T3 is, for example, a thickness measured along a normal direction of the flexible substrate 180 or a normal direction (i.e., a direction Z) of the electronic device 100a between the metal layer 160a and the seed layer SL. When the thickness T3 is greater than 0.5 μm, the skin effect (skin effect) of the high frequency signal can be reduced to reduce the loss of the signal. The adhesive layer 170 is disposed on the metal layer 160a and within the opening 161a of the metal layer 160a, the flexible substrate 180 is disposed on the adhesive layer 170, and the flexible substrate 180 may be bonded to the temporary film TPF1 through the adhesive layer 170.

Then, referring to fig. 2D, the temporary film TPF1 is removed, and a first opening O1 and a second opening O2a are formed. In this embodiment, the temporary film TPF1 is removed, for example, by hand or mechanical force to expose the protective layer 120a. In this embodiment, the passivation layer 120a and the insulating layer 150a are drilled, for example, by laser drilling, so as to form a first opening O1 and a second opening O2a. Wherein the first opening O1 may expose the metal layer 130a, and the second opening O2a may expose the seed layer SL.

Then, referring to fig. 2E, conductive pads P1 and P2 are formed in the first opening O1 and the second opening O2a, respectively, a modulation unit 190 is provided, and the modulation unit 190 is disposed on the flexible substrate 180. The conductive pad P1 may be electrically connected to the metal layer 130a, and the conductive pad P2 may be electrically connected to the seed layer SL and the metal layer 160a. The modulation unit 190 may be disposed corresponding to the opening 161a of the metal layer 160a, and the modulation unit 190 may overlap the opening 161a of the metal layer 160a in a normal direction (i.e., direction Z) of the electronic device 100a. The modulation unit 190 may be bonded to the conductive pads P1 and P2 through the pads S1 and S2, respectively. The modulation unit 190 includes a first pad 191 and a second pad 192. The first pads 191 may be electrically connected to the driving unit 140 through the pads S1, the conductive pads P1 and the metal layer 130a, and the second pads 192 may be electrically connected to the metal layer 160a through the pads S2, the conductive pads P2 and the seed layer SL.

Next, referring to fig. 2E, an underfill 210 is formed between the modulation unit 190 and the passivation layer 120a, so that the underfill 210 can encapsulate and protect the bonding pad S1, the bonding pad S2, the first bonding pad 191 and the second bonding pad 192. In some embodiments, the packaging process of the electronic device 100a may also be optionally continued. Thus far, the electronic device 100a of the present embodiment has been substantially manufactured.

In the present embodiment, since the thickness T2 of the seed layer SL is smaller than 0.5 μm, the seed layer SL is not easily warped due to a high temperature process (e.g. a process for manufacturing the driving unit 140), and the step of forming the seed layer SL may be performed before the step of disposing the driving unit 140.

As mentioned above, the electronic device 100a of the present embodiment may include the flexible substrate 180, the adhesive layer 170, the metal layer 160a, the driving unit 140 and the modulating unit 190. Wherein, the adhesive layer 170 is disposed on the flexible substrate 180. The metal layer 160a is disposed on the adhesive layer 170. The driving unit 140 is disposed on the adhesive layer 170. The modulation unit 190 is disposed on the adhesive layer 170.

Fig. 3A to 3E are schematic cross-sectional views illustrating a manufacturing method of an electronic device according to a third embodiment of the disclosure. The embodiment shown in fig. 3A to 3E is similar to the embodiment shown in fig. 1A to 1D, and thus, like elements are denoted by like reference numerals, and the detailed description thereof will not be repeated. The electronic device 100b of the present embodiment has a flexible or bendable characteristic, and the manufacturing method of the electronic device 100b of the present embodiment may include the following steps:

first, referring to fig. 3A, a carrier substrate 110 is provided, a release layer RL is formed on the carrier substrate 110, a flexible substrate 180b is disposed on the carrier substrate 110, and an insulating layer IL is formed on the carrier substrate 110. The release layer RL is disposed between the flexible substrate 180b and the carrier substrate 110, and the release layer RL and the carrier substrate 110 can be removed in a subsequent step. In some embodiments, a release layer may be optionally disposed between the flexible substrate and the carrier substrate. In the present embodiment, the thermal expansion coefficient of the flexible substrate 180b is substantially similar to that of the carrier substrate 110, and the difference between the thermal expansion coefficient of the flexible substrate 180b and that of the carrier substrate 110 may be, for example, less than 5 ppm/DEG C, but is not limited thereto. In the present embodiment, the insulating layer IL is disposed on the flexible substrate 180b, such that the flexible substrate 180b is located between the insulating layer IL and the release layer RL. The insulating layer IL may have a single-layer structure or a multi-layer structure, and may include, for example, an organic material, an inorganic material, or a combination of the foregoing, but is not limited thereto.

Next, referring to fig. 3A, a metal layer 160b is formed on the carrier substrate 110, and an insulating layer 150b is formed on the carrier substrate 110. Wherein, the metal layer 160b is disposed on the insulating layer IL. The metal layer 160b includes an opening 161b, and the opening 161b may expose a portion of the insulating layer IL. The thickness T4 of the metal layer 160b may be, for example, greater than 0.5 micrometers, but is not limited thereto. The thickness T4 is, for example, a thickness of the metal layer 160b measured along a normal direction of the carrier substrate 110 or a normal direction (i.e., a direction Z) of the electronic device 100b. When the thickness T4 is greater than 0.5 μm, the skin effect (skin effect) of the high frequency signal can be reduced to reduce the loss of the signal. The insulating layer 150b is disposed on the metal layer 160b and within the opening 161b of the metal layer 160b.

Then, referring to fig. 3B, a metal layer 130B is formed on the carrier substrate 110, a driving unit 140 is disposed on the carrier substrate 110, a passivation layer 120B is formed on the carrier substrate 110, and a first opening O1 and a second opening O2 are formed. The metal layer 130b is disposed on the insulating layer 150b, and the metal layer 130b has an opening 131b exposing a portion of the insulating layer 150b. The driving unit 140 is disposed on the metal layer 130b and in the opening 131b of the metal layer 130b, the driving unit 140 is electrically connected to the metal layer 130b, and the insulating layer 150b is disposed between the driving unit 140 and the metal layer 160b. The protection layer 120b is disposed on the driving unit 140, and the protection layer 120b may cover the driving unit 140, the metal layer 130b, and the insulating layer 150b. In this embodiment, the passivation layer 120b and the insulating layer 150b are drilled, for example, by laser drilling, so as to form a first opening O1 and a second opening O2. Wherein, the first opening O1 may expose the metal layer 130b, and the second opening O2 may expose the metal layer 160b.

Then, referring to fig. 3C, conductive pads P1 and P2 are formed in the first opening O1 and the second opening O2, respectively, a modulation unit 190 is provided, and the modulation unit 190 is disposed on the flexible substrate 180b. The conductive pad P1 may be electrically connected to the metal layer 130b, and the conductive pad P2 may be electrically connected to the metal layer 160b. The modulation unit 190 may be disposed corresponding to the opening 161b of the metal layer 160b, and the modulation unit 190 may overlap the opening 161b of the metal layer 160b in a normal direction (i.e., direction Z) of the electronic device 100b. The modulation unit 190 may be bonded to the conductive pads P1 and P2 through the pads S1 and S2, respectively. The modulation unit 190 includes a first pad 191 and a second pad 192. The first pads 191 may be electrically connected to the driving unit 140 through the pads S1, the conductive pads P1 and the metal layer 130b, and the second pads 192 may be electrically connected to the metal layer 160b through the pads S2 and the conductive pads P2.

Next, referring to fig. 3C, an underfill 210 is formed between the modulation unit 190 and the passivation layer 120b, so that the underfill 210 can encapsulate and protect the bonding pad S1, the bonding pad S2, the first bonding pad 191 and the second bonding pad 192.

Then, referring to fig. 3D, a temporary film TPF2 is formed on the carrier substrate 110, and the release layer RL and the carrier substrate 110 are removed to expose the flexible substrate 180b. The temporary film TPF2 is disposed on the protective layer 120b, so that the structure after the release layer RL and the carrier substrate 110 are removed will not be rolled up. In the present embodiment, the temporary film TPF2 is, for example, a substrate containing a weakly tacky adhesive layer, and the material of the substrate may include, for example, polyvinyl chloride, polyimide, or polyethylene terephthalate, but is not limited thereto.

Then, referring to fig. 3E, after the driving unit 140 is disposed, an adhesive layer 170b is formed on the temporary film TPF2 to provide a flexible substrate 185, and the flexible substrate 185 and the temporary film TPF2 are combined. The adhesive layer 170b is disposed on the flexible substrate 180b, the flexible substrate 185 is disposed on the adhesive layer 170b, and the flexible substrate 185 can be bonded to the flexible substrate 180b and the temporary film TPF2 through the adhesive layer 170 b. In the present embodiment, since the flexible substrate 185 is bonded to the flexible substrate 180b through the adhesive layer 170b after the driving unit 140 is disposed, the thermal expansion coefficient of the flexible substrate 185 is not particularly limited. In the present embodiment, the rigidity of the electronic device 100b can be increased by providing another flexible substrate 185 on the flexible substrate 180b, but is not limited thereto. In some embodiments, the flexible substrate 185 may be omitted if desired.

Next, referring to fig. 3E, the temporary film TPF2 is removed to expose the protection layer 120b and the modulation unit 190. In some embodiments, the packaging process of the electronic device 100b may also be optionally continued. Thus far, the electronic device 100b of the present embodiment has been substantially manufactured.

In the present embodiment, although the step of disposing the flexible substrate precedes the step of disposing the driving unit, the method of manufacturing the electronic device 100b of the present embodiment can reduce the warpage problem during the high temperature process (e.g. the process of manufacturing the driving unit 140) by making the thermal expansion coefficient of the flexible substrate 180b substantially similar to the thermal expansion coefficient of the carrier substrate 110 (i.e. the difference between the thermal expansion coefficient of the flexible substrate 180b and the thermal expansion coefficient of the carrier substrate 110 is less than 5ppm/°c).

As mentioned above, the electronic device 100b of the present embodiment may include the flexible substrate 185, the adhesive layer 170b, the metal layer 160b, the driving unit 140 and the modulating unit 190. Wherein, the adhesive layer 170b is disposed on the flexible substrate 185. The metal layer 160b is disposed on the adhesive layer 170 b. The driving unit 140 is disposed on the adhesive layer 170 b. The modulation unit 190 is disposed on the adhesive layer 170 b.

In summary, in the electronic device and the manufacturing method thereof according to the embodiments of the present disclosure, the electronic device with the modulation unit of the present embodiment can be applied to a non-planar structure by using the flexible substrate with the flexibility or the bending property. In addition, by performing the step of providing the driving unit first, and then performing the steps of forming the insulating layer (or the protective layer), forming the metal layer, and providing the flexible substrate, the problem of warpage can be reduced. In addition, by making the coefficient of thermal expansion of the flexible substrate 180b substantially similar to that of the carrier substrate 110 (i.e., the difference between the coefficient of thermal expansion of the flexible substrate 180b and the coefficient of thermal expansion of the carrier substrate 110 is less than 5ppm/°c), the step of providing the flexible substrate can be made before the step of providing the driving unit.

Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present disclosure, but not limiting the same; although the present disclosure has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art will appreciate that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present disclosure.

Claims

1. An electronic device, comprising:

a flexible substrate;

an adhesive layer disposed on the flexible substrate;

a metal layer disposed on the adhesive layer;

a driving unit disposed on the adhesive layer; and

the modulating unit is arranged on the adhesive layer.

2. The electronic device of claim 1, wherein the metal layer has a thickness greater than 0.5 microns.

3. The electronic device of claim 1, wherein the modulation unit comprises a first pad and a second pad, the first pad is electrically connected to the driving unit, and the second pad is electrically connected to the metal layer.

4. The electronic device of claim 1, wherein the metal layer includes an opening, and the modulation unit is disposed corresponding to the opening.

5. The electronic device of claim 1, further comprising:

and the insulating layer is arranged between the metal layer and the driving unit.

6. The electronic device of claim 1, wherein the modulation unit is configured to modulate at least one of phase, amplitude, and frequency.

7. A method of manufacturing an electronic device, comprising:

providing a bearing substrate;

forming a first metal layer on the bearing substrate;

providing a flexible substrate and combining the flexible substrate and the bearing substrate;

removing the bearing substrate; and

providing a modulation unit and arranging the modulation unit on the flexible substrate.

8. The manufacturing method according to claim 7, characterized by further comprising:

the driving unit is arranged on the bearing substrate.

9. The method of claim 8, wherein the modulation unit comprises a first pad and a second pad, the first pad is electrically connected to the driving unit, and the second pad is electrically connected to the first metal layer.

10. The method of manufacturing according to claim 8, further comprising:

an insulating layer is formed between the first metal layer and the driving unit.

11. The method of manufacturing according to claim 8, further comprising:

forming a second metal layer on the carrier substrate, so that the second metal layer is electrically connected with the driving unit.

12. The method of manufacturing according to claim 11, further comprising:

forming a first opening to expose the first metal layer; and

a second opening is formed to expose the second metal layer.

13. The manufacturing method according to claim 7, characterized by further comprising:

an adhesive layer is formed to bond the flexible substrate and the carrier substrate.