CN117153762B - Electrostatic adsorption film pressing structure and film pressing method - Google Patents
Electrostatic adsorption film pressing structure and film pressing method Download PDFInfo
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- CN117153762B CN117153762B CN202311406300.5A CN202311406300A CN117153762B CN 117153762 B CN117153762 B CN 117153762B CN 202311406300 A CN202311406300 A CN 202311406300A CN 117153762 B CN117153762 B CN 117153762B
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- 238000003825 pressing Methods 0.000 title claims abstract description 50
- 238000001179 sorption measurement Methods 0.000 title claims abstract description 49
- 239000000463 material Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000009413 insulation Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 239000000741 silica gel Substances 0.000 claims description 3
- 229910002027 silica gel Inorganic materials 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 claims 1
- 239000007769 metal material Substances 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 10
- 239000012528 membrane Substances 0.000 description 16
- 230000003247 decreasing effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000003475 lamination Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000001125 extrusion Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
- B29C65/56—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor using mechanical means or mechanical connections, e.g. form-fits
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
- B29C65/78—Means for handling the parts to be joined, e.g. for making containers or hollow articles, e.g. means for handling sheets, plates, web-like materials, tubular articles, hollow articles or elements to be joined therewith; Means for discharging the joined articles from the joining apparatus
- B29C65/7841—Holding or clamping means for handling purposes
- B29C65/7852—Holding or clamping means for handling purposes using electrostatic forces to hold at least one of the parts to be joined
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Laminated Bodies (AREA)
- Lining Or Joining Of Plastics Or The Like (AREA)
Abstract
The invention discloses an electrostatic adsorption film pressing structure and a film pressing method, wherein a first chamber and a second chamber are arranged in a shell; the carrier is arranged in the first cavity and used for carrying the substrate; the adsorption piece is connected to the second chamber, wherein the adsorption piece comprises a first electrode layer and a dielectric layer, the first electrode layer and the dielectric layer are arranged in a layer-by-layer mode, and the dielectric layer is arranged on one side close to the first chamber; a second electrode layer is arranged on one side of the film to be pressed, which is contacted with the dielectric layer, and the polarity of charges carried by the first electrode layer and the second electrode layer is opposite; the gas circuit pipeline is connected with the dielectric layer; the first controller is electrically connected with the air circuit pipeline and controls the air circuit pipeline to pressurize the dielectric layer, so that the dielectric layer is suitable for expanding towards the carrier after being subjected to the pressure of the air circuit pipeline; the third controller is electrically connected with the adsorption piece and controls the power on and power off of the adsorption piece. So as to press the pre-cut and non-pre-cut film materials, and the automatic degree of the pressing process is high.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an electrostatic adsorption film pressing structure and a film pressing method.
Background
Under the push of market demands, the traditional chip packaging technology is continuously innovated and evolved to meet the requirements of high speed, miniaturization and low cost of electronic products and equipment, the advantages of the advanced packaging technology are more and more obvious, the required quantity is continuously increased, and a certain market space is gradually occupied.
At present, the membrane to be pressed is pre-cut and non-pre-cut, in order to adapt to the chip stacking process, the wafer is thinned before the membrane to be pressed is attached, and the thinned wafer is fixed on the membrane stretching ring, so that the membrane to be pressed is required to be pre-cut, the membrane to be pressed is prevented from being adhered to the membrane to be pressed on the membrane stretching ring as shown in fig. 1, the membrane is required to be manually laid on a frame membrane as shown in fig. 2 for achieving the best attaching effect, and the membrane pressing cavity is prevented from being contacted with a substrate before reaching vacuum, so that membrane pressing bubbles are generated.
Disclosure of Invention
The technical problem to be solved by the embodiment of the invention is to provide an electrostatic adsorption film pressing structure and a film pressing method, which can press pre-cut and non-pre-cut film materials and have high automation degree in the pressing process.
In order to solve the above technical problem, a first aspect of the present invention provides an electrostatic adsorption film pressing structure, including: a housing having a first chamber and a second chamber therein;
the carrier is arranged in the first cavity and used for bearing the substrate;
an adsorption member connected to the second chamber, wherein the adsorption member includes a first electrode layer and a dielectric layer, the first electrode layer and the dielectric layer being arranged on one side close to the first chamber; a second electrode layer is arranged on one side of the film to be laminated, which is in contact with the dielectric layer, and the polarity of charges carried by the first electrode layer and the second electrode layer is opposite;
the gas circuit pipeline is connected with the dielectric layer;
the first controller is electrically connected with the air circuit pipeline and used for controlling the air circuit pipeline to pressurize the dielectric layer so that the dielectric layer is suitable for expanding towards the carrier after being subjected to the pressure of the air circuit pipeline;
and the second controller is electrically connected with the adsorption piece and used for controlling the on-off of the adsorption piece.
In one possible implementation, the film pressing structure further includes a vacuum pumping pipeline and a third controller; the adsorption piece and the first chamber are surrounded to form a closed space;
the third controller is electrically connected with the vacuumizing pipeline and controls the vacuumizing pipeline to vacuumize the closed space.
In one possible implementation, the first electrode layer includes a heat insulating layer and a heating layer, and two ends of the heating layer are respectively connected to the heat insulating layer and the dielectric layer.
In one possible implementation, the heat insulation layer is made of ceramic, and the heating layer is made of metal.
In one possible implementation, the dielectric layer is an air bag, and the air bag is made of silica gel.
In one possible implementation, the housing includes a first housing having a first chamber and a second housing having a second chamber, and the connection ends of the first housing and the second housing are provided with sealing rings.
Correspondingly, the second aspect of the invention also provides a film pressing method, which is applied to the film pressing mechanism of the first aspect and comprises the following steps:
step one: placing the base material on a bearing surface of the carrier, and moving the film to be laminated between the first chamber and the second chamber;
step two: after the second controller is used for electrifying the adsorption piece, the adsorption piece adsorbs the film to be pressed;
step three: the dielectric layer expands under pressure, and after the film to be laminated contacts with the base material, the second controller is powered off; step four: and controlling the gas flow direction in the gas pipeline through the first controller, and controlling the pressure in the dielectric layer to finish film pressing.
In one possible implementation, before performing the third step, the film pressing method further includes:
and vacuumizing a closed space formed by surrounding the adsorption piece and the first chamber.
In one possible implementation manner, the step four specifically includes:
the first controller performs at least two cycle controls on the pressure within the dielectric layer, the cycle controls including: the first controller controls the air circuit pipeline to pressurize the dielectric layer, so that the dielectric layer is suitable for expanding towards the carrier after being subjected to the pressure of the air circuit pipeline, the film and the base material to be pressed are extruded, and the pressure is reduced after the constant pressure is kept for a preset time.
In one possible implementation, the pressure value reached by the pressurization is the same or different in each cycle control.
The implementation of the invention has the following beneficial effects:
the invention discloses an electrostatic adsorption film pressing structure and a film pressing method, wherein an adsorption piece has an electrostatic adsorption effect on a film to be pressed, so that the isolation between the film to be pressed and a substrate can be ensured before a closed space reaches a required vacuum value, the subsequent residual glue cleaning work caused by laying the film to be pressed can be omitted, and the design of a complex lifting system of a carrier in a first cavity is realized; in addition, the film pressing structure with the electrostatic adsorption function can be compatible with the lamination of pre-cut film materials and non-pre-cut film materials, and can replace the original adhesive dispensing and defoaming baking equipment with complex operation; in addition, the investment cost of packaging equipment can be reduced, and high-automation and mass production manufacturing can be realized.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the application and together with the description, serve to explain the principles of the application and do not constitute an undue limitation on the application.
FIG. 1 is a schematic structural view of a substrate;
FIG. 2 is a schematic view of a structure in which a film to be laminated is fixed;
FIG. 3 is a schematic view of an electrostatic adsorption film pressing structure in the present embodiment;
fig. 4 is a schematic structural view of a dielectric layer in the present embodiment;
FIG. 5 is a schematic flow chart of the film pressing method in this example.
Reference numerals in the drawings:
11-a substrate; 12-film lamination; 121-a second electrode layer;
21-a first housing; 22-a second housing; 23-a first chamber; 24-a second chamber; 25-sealing rings;
3-stage; 31-fixing piece;
41-a first electrode layer; 411-insulating layer; 412-a heating layer; 42-dielectric layer.
Detailed Description
In order that the above objects, features and advantages of the invention will be readily understood, a more particular description of the invention will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The present invention may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the invention, whereby the invention is not limited to the specific embodiments disclosed below.
It will be understood that when an element is referred to as being "fixed to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
Referring to fig. 3 and 4, in one embodiment, an electrostatic adsorption film pressing structure is provided for adhering a substrate 11 and a film 12 to be laminated, where the film pressing structure includes a housing, a carrier 3, an adsorption member, an air path pipeline, a first controller and a second controller. Wherein the interior of the housing has a first chamber 23 and a second chamber 24; the carrier 3 is disposed in the first chamber 23 and carries the substrate 11; the adsorbing member is connected to the second chamber 24, wherein the adsorbing member comprises a first electrode layer 41 and a dielectric layer 42, the first electrode layer 41 and the dielectric layer 42 are arranged in a stacked manner, and the dielectric layer 42 is arranged at a side close to the first chamber 23; a second electrode layer 121 is arranged on one side of the film 12 to be laminated, which is contacted with the dielectric layer 42, and the polarity of charges carried by the first electrode layer 41 and the second electrode layer 121 is opposite; the gas circuit pipeline is connected with the dielectric layer 42; the first controller is electrically connected with the air circuit pipeline, and controls the air circuit pipeline to pressurize the dielectric layer 42, so that the dielectric layer 42 is suitable for expanding towards the carrier 3 after being subjected to the pressure of the air circuit pipeline; the second controller is electrically connected with the adsorption piece and controls the power on and power off of the adsorption piece.
In the primary film pressing process, the first controller performs at least two times of circulation control on the pressure in the dielectric layer 42, and the single-time circulation control comprises the steps of controlling a gas circuit pipeline to pressurize the dielectric layer 42, keeping constant pressure for a preset time period and then reducing the pressure; when the dielectric layer 42 is pressurized, the dielectric layer 42 expands towards the carrier 3, so as to drive the film 12 to be pressed on the dielectric layer 42 to approach the carrier 3, so that the film 12 to be pressed and the substrate 11 are attached together, and after the extrusion state is maintained for a preset period of time, the pressure is reduced to a certain pressure value, and the pressurizing, constant pressure and reducing processes are recycled, so that the film 12 to be pressed can be pressed on the substrate 11 for multiple times, the pressing effect between the two is improved, and particularly, the multi-stage pressurizing and pressing mode can have a good filling effect on the high-aspect-ratio holes aiming at the substrate 11 with the high-aspect-ratio hole structure, and further the product performance and reliability are improved.
Wherein, as shown in reference 3, the housing comprises a first housing 21 and a second housing 22, the first housing 21 is provided with a first chamber 23, the second housing 22 is provided with a second chamber 24, wherein, the first housing 21 and the second housing 22 are provided with openings, and the openings of the first housing 21 and the second housing 22 are connected to form the first chamber 23 and the second chamber 24; of course, in order to ensure the tightness of the connection of the first housing 21 and the second housing 22, the connection end of the first housing 21 and the second housing 22 is provided with a seal ring 25.
Specifically, the stage 3 is disposed in the first chamber 23 and carries the substrate 11; wherein the carrier 3 is fixed to the first chamber 23 by a fixing member 31. The stage 3 may be an adsorption stage, such as a vacuum adsorption stage or an electrostatic adsorption stage. Taking a vacuum adsorption platform as an example, the substrate 11 can be adsorbed on the vacuum adsorption platform under the action of negative pressure, so that the substrate 11 and the film 12 to be laminated can be aligned and laminated in the lamination process.
Further, referring to fig. 3, the adsorbing member is connected to the second chamber 24, wherein the adsorbing member includes a first electrode layer 41 and a dielectric layer 42, the first electrode layer 41 and the dielectric layer 42 are stacked, and the dielectric layer 42 is disposed at a side close to the first chamber 23; a second electrode layer 121 is arranged on one side of the film 12 to be laminated, which is contacted with the dielectric layer 42, and the polarity of charges carried by the first electrode layer 41 and the second electrode layer 121 is opposite; when the dc electrode is turned on to the high voltage (low current) dc power supply, the surface of the dielectric layer 42 generates polarized charges, and the surface charges of the dielectric layer 42 generate an electric field, which further generates polarized charges on the surface of the film 12 to be laminated placed on the adsorbing member, and the charges distributed on the back surface of the film 12 to be laminated have opposite polarities to the charges distributed on the adsorbing member, so that the film 12 to be laminated is adsorbed by the adsorbing member. By arranging the electrostatic absorption member in the first chamber 23, the film 12 to be laminated can be electrostatically absorbed, the isolation between the film 12 to be laminated and the substrate 11 can be ensured before the airtight space reaches the required vacuum value, the subsequent residual adhesive cleaning work brought by paving the film 12 to be laminated can be omitted, and the complex lifting system design of the carrier 3 in the first chamber 23 can be realized.
Alternatively, referring to fig. 4, the first electrode layer 41 includes a heat insulating layer 411 and a heating layer 412, and both ends of the heating layer 412 are connected to the heat insulating layer 411 and the dielectric layer 42, respectively. In one embodiment, the insulating layer 411 is made of ceramic, and the heating layer 412 is made of metal. In addition, in one embodiment, the dielectric layer 42 is an air bag, and the air bag is made of silica gel. The air bag which is heated and pressed to be expanded and contracted acts on the membrane material and the base material 11 in a flexible extrusion mode, so that the membrane material and the base material are tightly attached; finally, the equipment cutting system cuts the film, and vacuum film pasting and pressing are completed.
The pressure of each control node in each circulation control can be flexibly set.
In one embodiment, the pressure value reached by the pressurization is the same or different in each cycle control. For example, in each cycle control, the pressure value reached by the pressurization may be kept uniform, may be gradually increased or decreased, may be increased first and then decreased, may be decreased first or increased first, or may be randomly changed, and in this embodiment, the pressure value reached by each pressurization is not particularly limited and may be determined according to actual needs.
The pressure value to be reduced may be different in each cycle control, and may be, for example, a different pressure value greater than 0, or a pressure value partially greater than 0, a pressure value partially zero, or a pressure value partially less than 0, or the like. Similarly, in the present embodiment, the pressure value achieved by each depressurization is not particularly limited, and may be determined according to the actual requirement.
Optionally, the film pressing structure further comprises a vacuumizing pipeline and a third controller; the absorption part and the first chamber 23 form a closed space; the third controller is electrically connected with the vacuumizing pipeline and controls the vacuumizing pipeline to vacuumize the closed space; so as to form a vacuum environment, so that the subsequent pressing process can be performed in the vacuum environment, and further, bubbles are prevented from being generated in the film material formed after pressing.
Optionally, the present embodiment further provides a film pressing method applied to the film pressing structure described above, and referring to fig. 5, the film pressing method provided in this embodiment includes the following steps:
step one: the substrate 11 is placed on the carrying surface of the carrier 3, and the film 12 to be laminated is moved between the first chamber 23 and the second chamber 24.
Firstly, placing a substrate 11 on a bearing surface of a carrier 3, wherein the carrier 3 can be a vacuum adsorption platform, namely, the substrate 11 can be vacuum adsorbed on the carrier 3, after the substrate 11 is placed, drawing a film 12 to be laminated on an air bag surface of an adsorption piece in a second chamber 24, combining a first shell 21 and a second shell 22 into a shell, forming a first chamber 23 and a second chamber 24, forming a closed space between the first chamber 23 and the adsorption piece, and performing film laminating operation in the closed space.
Step two: after the adsorbing member is energized by the second controller, the adsorbing member adsorbs the film 12 to be laminated.
The second controller is electrically connected with the adsorption piece and controls the power on and power off of the adsorption piece. When the dc electrode is connected to the high voltage (low current) dc power supply, the surface of the dielectric layer 42 generates polarized charges, and the surface charges of the dielectric layer 42 generate an electric field, which further generates polarized charges on the surface of the film 12 to be laminated placed on the adsorbing member, and the charges distributed on the back surface of the film 12 to be laminated have opposite polarities to the charges distributed on the adsorbing member, so that the film 12 to be laminated is attracted by the adsorbing member. In addition, when the film 12 to be laminated is adsorbed, the bottom film thereof is peeled off, i.e., the film on the side of the film 12 to be laminated near the first chamber 23.
Step three: the dielectric layer 42 expands under pressure while the adsorbent is powered off; and the second controller is powered off when the film 12 to be laminated is in contact with the substrate 11.
The air bag which is heated and pressed to be expanded and contracted acts on the film 12 to be pressed and the base material 11 in a flexible extrusion mode, and after the film 12 to be pressed contacts with the base material 11, the second controller turns off the high-voltage (low-current) direct-current power supply connected to the direct-current electrode, the film 12 to be pressed is released, the suction force automatically disappears, and the film 12 to be pressed and the base material 11 are tightly attached.
Before the third step is executed, the third controller is electrically connected with a vacuumizing pipeline, and the vacuumizing pipeline is controlled to vacuumize the closed space; so as to form a vacuum environment and avoid the generation of bubbles in the pressing process.
Step four: the pressure within the dielectric layer 42 is controlled to complete the lamination by controlling the flow of gas in the gas line by the first controller.
Wherein the first controller performs at least two cycle control of the pressure within the dielectric layer 42, the single cycle control comprising: the air channel pipeline is controlled to pressurize the dielectric layer 42, so that the dielectric layer 42 is suitable for being expanded towards the carrier 3 after being subjected to the pressure of the air channel pipeline, the film 12 and the substrate 11 to be pressed are extruded, and the pressure is reduced after the constant pressure is kept for a preset time.
Wherein the pressure of each control node in each circulation control can be flexibly set. In one embodiment, the pressure value reached by the pressurization is the same or different in each cycle control. For example, in each cycle control, the pressure value reached by the pressurization may be kept uniform, may be gradually increased or decreased, may be increased first and then decreased, may be decreased first or increased first, or may be randomly changed, and in this embodiment, the pressure value reached by each pressurization is not particularly limited and may be determined according to actual needs. The pressure value to be reduced may be different in each cycle control, and may be, for example, a different pressure value greater than 0, or a pressure value partially greater than 0, a pressure value partially zero, or a pressure value partially less than 0, or the like. Similarly, in the present embodiment, the pressure value achieved by each depressurization is not particularly limited, and may be determined according to the actual requirement. Further, the dielectric layer 42 is continuously expanded and compressed along with the change of the pressure value, and continuously acts on the membrane material and the base material 11, so that the membrane material and the base material are tightly attached to each other, and the membrane pressing operation is realized.
In the film pressing method provided by the embodiment, in the one-time film pressing process, the first controller performs at least two times of circulation control on the pressure in the dielectric layer 42, and the single-time circulation control comprises the steps of controlling the gas circuit pipeline to press the dielectric layer 42, keeping the constant pressure for a preset time period, and then reducing the pressure; when the dielectric layer 42 is pressurized, the dielectric layer 42 expands towards the carrier 3, so as to drive the film 12 to be pressed on the dielectric layer 42 to approach the carrier 3, so that the film 12 to be pressed and the substrate 11 are attached together, and after the extrusion state is maintained for a preset period of time, the pressure is reduced to a certain pressure value, and the pressurizing, constant pressure and reducing processes are recycled, so that the film 12 to be pressed can be pressed on the substrate 11 for multiple times, and the pressing effect between the two is improved.
The electrostatic adsorption of the film 12 to be laminated by the adsorption piece can realize that the isolation between the film 12 to be laminated and the base material 11 can be ensured before the closed space reaches the required vacuum value, so that the subsequent residual adhesive cleaning work brought by paving the film 12 to be laminated and the complex lifting system design of the carrier 3 in the first chamber 23 can be omitted; in addition, the film pressing structure with the electrostatic adsorption function can be compatible with the lamination of pre-cut film materials and non-pre-cut film materials, and can replace the original adhesive dispensing and defoaming baking equipment with complex operation; in addition, the investment cost of packaging equipment can be reduced, and high-automation and mass production manufacturing can be realized.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (10)
1. An electrostatic adsorption film pressing structure for laminating a substrate and a film to be laminated, comprising:
a housing having a first chamber and a second chamber therein;
the carrier is arranged in the first cavity and used for bearing the substrate;
an adsorption member connected to the second chamber, wherein the adsorption member includes a first electrode layer and a dielectric layer, the first electrode layer and the dielectric layer being arranged on one side close to the first chamber; a second electrode layer is arranged on one side of the film to be laminated, which is in contact with the dielectric layer, and the polarity of charges carried by the first electrode layer and the second electrode layer is opposite;
the gas circuit pipeline is connected with the dielectric layer;
the first controller is electrically connected with the air circuit pipeline and used for controlling the air circuit pipeline to pressurize the dielectric layer so that the dielectric layer is suitable for expanding towards the carrier after being subjected to the pressure of the air circuit pipeline;
and the second controller is electrically connected with the adsorption piece and used for controlling the electrification and the outage of the adsorption piece.
2. The laminated structure according to claim 1, wherein,
the film pressing structure further comprises a vacuumizing pipeline and a third controller; the adsorption piece and the first chamber are surrounded to form a closed space;
the third controller is electrically connected with the vacuumizing pipeline and controls the vacuumizing pipeline to vacuumize the closed space.
3. The laminated structure according to claim 1, wherein,
the first electrode layer comprises a heat insulation layer and a heating layer, and two ends of the heating layer are respectively connected with the heat insulation layer and the dielectric layer.
4. The laminated structure according to claim 3, wherein,
the heat insulation layer is made of ceramic materials, and the heating layer is made of metal materials.
5. The laminated structure according to claim 1, wherein,
the dielectric layer is an air bag, and the air bag is made of silica gel.
6. The laminated structure according to claim 1, wherein,
the shell comprises a first shell and a second shell, wherein the first shell is provided with a first cavity, the second shell is provided with a second cavity, and a sealing ring is arranged at the connecting end of the first shell and the second shell.
7. A film pressing method applied to the film pressing structure according to any one of claims 1 to 6, wherein,
step one: placing the base material on a bearing surface of the carrier, and moving the film to be laminated between the first chamber and the second chamber;
step two: after the second controller is used for electrifying the adsorption piece, the adsorption piece adsorbs the film to be pressed;
step three: the dielectric layer is controlled to expand under pressure by the first controller, and the second controller is powered off after the film to be laminated contacts with the base material; step four: and the first controller controls the flow direction of the gas in the gas path pipeline and controls the pressure in the dielectric layer so as to finish film pressing.
8. The film pressing method according to claim 7, further comprising, before performing the third step:
and vacuumizing a closed space formed by surrounding the adsorption piece and the first chamber.
9. The method of claim 7, wherein controlling the pressure within the dielectric layer specifically comprises:
the first controller performs at least two cycle controls on the pressure within the dielectric layer, the cycle controls including: the first controller controls the air circuit pipeline to pressurize the dielectric layer, so that the dielectric layer is suitable for expanding towards the carrier after being subjected to the pressure of the air circuit pipeline, the film to be pressed and the base material are extruded, and the pressure is reduced after the constant pressure is kept for a preset time.
10. The film pressing method according to claim 9, wherein,
the pressure values reached by pressurization are the same or different in each cycle control.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311406300.5A CN117153762B (en) | 2023-10-27 | 2023-10-27 | Electrostatic adsorption film pressing structure and film pressing method |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003324144A (en) * | 2002-04-30 | 2003-11-14 | Shin-Etsu Engineering Co Ltd | Electrostatic chuck and lamination device for flat panel substrate using it |
| CN103050429A (en) * | 2012-12-14 | 2013-04-17 | 上海集成电路研发中心有限公司 | Electrostatic sucker and manufacturing method thereof |
| CN114068348A (en) * | 2020-08-07 | 2022-02-18 | 志圣科技（广州）有限公司 | Film sticking device and film sticking method |
| CN114801149A (en) * | 2022-04-29 | 2022-07-29 | 北海惠科半导体科技有限公司 | Film pressing method of vacuum film pressing machine and vacuum film pressing machine |
| CN115483138A (en) * | 2022-10-09 | 2022-12-16 | 南京屹立芯创半导体科技有限公司 | Film pressing structure, film pressing system and film pressing method |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003324144A (en) * | 2002-04-30 | 2003-11-14 | Shin-Etsu Engineering Co Ltd | Electrostatic chuck and lamination device for flat panel substrate using it |
| CN103050429A (en) * | 2012-12-14 | 2013-04-17 | 上海集成电路研发中心有限公司 | Electrostatic sucker and manufacturing method thereof |
| CN114068348A (en) * | 2020-08-07 | 2022-02-18 | 志圣科技（广州）有限公司 | Film sticking device and film sticking method |
| CN114801149A (en) * | 2022-04-29 | 2022-07-29 | 北海惠科半导体科技有限公司 | Film pressing method of vacuum film pressing machine and vacuum film pressing machine |
| CN115483138A (en) * | 2022-10-09 | 2022-12-16 | 南京屹立芯创半导体科技有限公司 | Film pressing structure, film pressing system and film pressing method |
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