CN117153729A - Semiconductor process equipment and cleaning method thereof - Google Patents

Semiconductor process equipment and cleaning method thereof Download PDF

Info

Publication number
CN117153729A
CN117153729A CN202311165221.XA CN202311165221A CN117153729A CN 117153729 A CN117153729 A CN 117153729A CN 202311165221 A CN202311165221 A CN 202311165221A CN 117153729 A CN117153729 A CN 117153729A
Authority
CN
China
Prior art keywords
gas
cleaning
process chamber
air
heating plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202311165221.XA
Other languages
Chinese (zh)
Inventor
王晓晨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tuojing Chuangyi Shenyang Semiconductor Equipment Co ltd
Original Assignee
Tuojing Chuangyi Shenyang Semiconductor Equipment Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tuojing Chuangyi Shenyang Semiconductor Equipment Co ltd filed Critical Tuojing Chuangyi Shenyang Semiconductor Equipment Co ltd
Priority to CN202311165221.XA priority Critical patent/CN117153729A/en
Publication of CN117153729A publication Critical patent/CN117153729A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment

Abstract

The embodiment of the application provides semiconductor process equipment and a cleaning method, and relates to the technical field of semiconductors. The semiconductor processing equipment comprises an equipment body, a heating plate and a gas cleaning assembly. The equipment body is provided with a process chamber. The heating plate is movably arranged in the process chamber. The gas cleaning component is arranged in the process chamber to introduce cleaning gas into the process chamber to clean the adherends adhered to the side wall of the process chamber and the heating plate. The cleaning of the process chamber and the equipment in the process chamber can be facilitated.

Description

Semiconductor process equipment and cleaning method thereof
Technical Field
The application relates to the technical field of semiconductor equipment, in particular to semiconductor process equipment and a cleaning method.
Background
Some process steps in semiconductor processing equipment can form byproducts that adhere to the surfaces of the walls of the process chamber and the internal devices, which can affect the performance of subsequent process steps.
Generally, in order to ensure the cleanliness of the process chamber of the semiconductor process equipment, regular cleaning is generally required, however, the existing cleaning mode is complex and the cleanliness of the cleaning is poor, and the requirements of process steps cannot be met.
Disclosure of Invention
The application aims at providing a semiconductor process device and a cleaning method thereof, which can facilitate cleaning of a process cavity and components of the device in the process cavity.
Embodiments of the application may be implemented as follows:
in a first aspect, the present application provides a semiconductor processing apparatus comprising an apparatus body, a heating plate, and a gas cleaning assembly;
the equipment body is provided with a process cavity;
the heating plate is movably arranged in the process cavity;
the gas cleaning component is arranged in the process chamber, so that cleaning gas is introduced into the process chamber to clean adherends adhered to the side wall of the process chamber and the heating plate.
In an alternative embodiment, the gas cleaning assembly comprises a pipeline and a first gas homogenizing ring, wherein the first gas homogenizing ring is arranged in the process cavity and is positioned at the top of the process cavity and above the heating plate;
a first annular flow passage is formed in the first air homogenizing ring, and a first air inlet and a plurality of first air outlet holes are formed in the first air homogenizing ring;
the pipeline is communicated with the first air inlet and can convey cleaning gas to the first annular flow passage;
and an extraction opening is arranged on the bottom wall of the process cavity.
In an alternative embodiment, a plurality of the first air outlets are arranged at the inner periphery of the first air homogenizing ring.
In an alternative embodiment, the gas cleaning assembly further comprises a second gas homogenizing ring, wherein the second gas homogenizing ring is arranged at the bottom of the process chamber and is positioned below the heating plate;
a second annular flow passage is formed in the second air homogenizing ring, and a first air inlet and a plurality of second air outlet holes are formed in the second air homogenizing ring;
the pipeline is also communicated with the second air inlet and can convey cleaning gas to the second annular flow passage.
In an alternative embodiment, the plurality of second air outlet holes are all arranged on one side of the second air homogenizing ring, which is close to the heating disc.
In an alternative embodiment, the semiconductor process apparatus further includes a shower plate, the shower plate is disposed below the first gas-homogenizing ring, and a plurality of through holes are disposed on the shower plate.
In an alternative embodiment, the semiconductor processing apparatus further comprises a quartz window mounted to an opening of the process chamber;
the cleaning assembly further includes a UV lamp set rotatably mounted above the quartz window.
In a second aspect, the present application provides a cleaning method of a semiconductor process apparatus, which is applied to the semiconductor process apparatus in any one of the foregoing embodiments, and the method includes:
controlling the heating disc to heat;
and controlling the heating plate to move towards the direction close to the cleaning assembly, and controlling the cleaning assembly to introduce cleaning gas into the process cavity so as to complete cleaning.
In an alternative embodiment, the gas cleaning assembly comprises a pipeline and a first gas homogenizing ring, the first gas homogenizing ring is arranged in the process cavity and is positioned at the top of the process cavity and above the heating plate, a first annular flow channel is formed in the first gas homogenizing ring, a first gas inlet and a plurality of first gas outlet holes are formed in the first gas homogenizing ring, the pipeline is communicated with the first gas inlet and can convey cleaning gas to the first annular flow channel, and a gas extraction opening is formed in the bottom wall of the process cavity;
the gas cleaning assembly further comprises a second gas homogenizing ring, wherein the second gas homogenizing ring is arranged at the bottom of the process cavity and is positioned below the heating plate. The second air homogenizing ring is internally provided with a second annular flow passage, and is provided with a first air inlet and a plurality of second air outlet holes. The pipeline is also communicated with the second air inlet and can convey cleaning gas to the second annular flow channel, and a plurality of second air outlet holes are arranged on one side of the second air homogenizing ring, which is close to the heating disc;
the step of controlling the heating plate to move towards the direction close to the cleaning assembly and controlling the cleaning assembly to introduce cleaning gas into the process chamber to complete cleaning comprises the following steps:
controlling the heating plate to move towards the direction close to the first gas homogenizing ring so as to enable the distance between the first gas homogenizing ring and the heating plate to be within a first preset range;
controlling an air supply device to send cleaning gas into the first gas homogenizing ring at a first preset pressure, exhausting by utilizing an air exhaust hole to enable the concentration of the cleaning gas in the process chamber to be in a first preset concentration range, enable the flow of the cleaning gas to be in a first preset flow range, and keeping the cleaning gas to be fed into the first gas homogenizing ring after a first preset time;
controlling the heating disc to move towards the direction close to the second gas homogenizing ring so as to enable the distance between the second gas homogenizing ring and the heating disc to be within a second preset range;
controlling an air supply device to send cleaning gas into the second gas homogenizing ring at a second preset pressure, exhausting by utilizing an air exhaust hole to enable the concentration of the cleaning gas in the process chamber to be in a second preset concentration range, enable the flow of the cleaning gas to be in a second preset flow range, and finally, after maintaining the second preset time, introducing the cleaning gas into the second gas homogenizing ring;
repeating the steps for a plurality of times.
In an alternative embodiment, the semiconductor processing apparatus further comprises a quartz window mounted to the opening of the process chamber, the cleaning assembly further comprising a UV lamp set rotatably mounted above the quartz window;
the step of controlling the air supply device to send cleaning gas into the first gas homogenizing ring at a first preset pressure, and exhausting air by utilizing the air exhaust hole to enable the concentration of the cleaning gas in the process chamber to be in a first preset concentration range, enable the flow of the cleaning gas to be in a first preset flow range, and maintain the first preset time comprises the following steps:
controlling an air supply device to send cleaning gas into the first gas homogenizing ring at a first preset pressure, exhausting air by utilizing an air exhaust hole to enable the concentration of the cleaning gas in the process chamber to be in a first preset concentration range and enable the flow of the cleaning gas to be in a first preset flow range, controlling the UV lamp set to continuously rotate, and maintaining the first preset time;
in an alternative embodiment, the second preset pressure is greater than the first preset pressure.
The semiconductor process equipment and the cleaning method provided by the embodiment of the application have the beneficial effects that:
according to the application, the gas cleaning component is arranged in the process cavity of the equipment body, so that cleaning gas can be introduced into the process cavity by using the gas cleaning component, and the process cavity and the heating plate arranged in the process cavity can be cleaned rapidly and comprehensively by matching with the heating plate.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a semiconductor processing apparatus according to an embodiment of the present application;
FIG. 2 is an enlarged schematic view of FIG. 1 at A;
fig. 3 is an enlarged schematic view at B in fig. 1.
Icon: 100-semiconductor process equipment; 110-an equipment body; 111-process chambers; 113-an extraction opening; 130-heating plate; 150-a gas cleaning assembly; 151-piping; 153-a first gas homogenizing ring; 155-a first annular flow channel; 157-a first air inlet; 159-a first air outlet; 161-a second gas homogenizing ring; 163-a second annular flow channel; 165-a second air inlet; 167-a second gas outlet; 171-shower plate; 173-quartz window; 175-UV lamp set.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments of the present application. The components of the embodiments of the present application generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the application, as presented in the figures, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present application, it should be noted that, if the terms "upper", "lower", "inner", "outer", and the like indicate an azimuth or a positional relationship based on the azimuth or the positional relationship shown in the drawings, or the azimuth or the positional relationship in which the inventive product is conventionally put in use, it is merely for convenience of describing the present application and simplifying the description, and it is not indicated or implied that the apparatus or element referred to must have a specific azimuth, be configured and operated in a specific azimuth, and thus it should not be construed as limiting the present application.
Furthermore, the terms "first," "second," and the like, if any, are used merely for distinguishing between descriptions and not for indicating or implying a relative importance.
It should be noted that the features of the embodiments of the present application may be combined with each other without conflict.
Referring to fig. 1, the present embodiment provides a semiconductor processing apparatus 100, which includes an apparatus body 110, a heating plate 130, and a gas cleaning assembly 150. The apparatus body 110 has a process chamber 111. The heating plate 130 is movably disposed within the process chamber 111. The gas cleaning assembly 150 is disposed in the process chamber 111 to introduce a cleaning gas into the process chamber 111 to clean the adherends adhering to the sidewall of the process chamber 111 and the heating plate 130.
In this embodiment, the gas cleaning assembly 150 is installed in the process chamber 111 of the apparatus body 110, so that cleaning gas can be introduced into the process chamber 111 by using the gas cleaning assembly 150, and then the process chamber 111 and the heating plate 130 disposed in the process chamber 111 can be cleaned rapidly and comprehensively by matching with the use of the heating plate 130.
In this embodiment, the semiconductor processing apparatus 100 may be a wafer film curing apparatus, and may also be other processing apparatuses, such as a wafer film plating apparatus.
Referring to fig. 1 and 2, in the present embodiment, the gas cleaning assembly 150 includes a pipe 151 and a first gas homogenizing ring 153, wherein the first gas homogenizing ring 153 is disposed in the process chamber 111 and is located on top of the process chamber 111 and above the heating plate 130. A first annular flow passage 155 is formed in the first gas distribution ring 153, and a first gas inlet 157 and a plurality of first gas outlet holes 159 are provided. The duct 151 communicates with the first inlet 157 and can deliver purge gas to the first annular flow channel 155. The bottom wall of the process chamber 111 is provided with an extraction opening 113.
In this embodiment, the first gas homogenizing ring 153 is disposed above the process chamber 111, so that the cleaning gas can be uniformly introduced into the process chamber 111, and the inner wall of the process chamber 111 and the heating plate 130 of the cleaning gas can be used for cleaning. The pumping hole 113 at the bottom of the process chamber 111 can allow the cleaning gas in the process chamber 111 to flow downwards, so that the overall cleaning can be realized.
Referring to fig. 1 and 2, in the present embodiment, a plurality of first air outlets are disposed at an inner periphery of the first air balancing ring 153.
In this embodiment, a plurality of first air outlet holes 159 are disposed at the inner periphery of the first air balancing ring 153, so that the cleaning air flows downward through the first air outlet holes to clean the upper surface of the lifted heating plate 130. The turbulent flow on the upper surface of the heating plate 130 can make the cleaning gas flow down along the sidewall of the process chamber 111, so that the sidewall of the process chamber 111 can be cleaned better.
Referring to fig. 1 and 3, because of the shielding between the bottom surface of the heating plate 130 and the bottom surface of the process chamber 111, the cleaning cleanliness of the bottom surface of the heating plate 130 and the bottom surface of the process chamber 111 is poor, so as to better clean the bottom surface of the heating plate 130 and the bottom surface of the process chamber 111. In this embodiment, the gas cleaning assembly 150 further includes a second gas distributing ring 161, where the second gas distributing ring 161 is disposed at the bottom of the process chamber 111 and is located below the heating plate 130. A second annular flow passage 163 is formed in the second gas distribution ring 161, and a first gas inlet 157 and a plurality of second gas outlet holes 167 are provided. The conduit 151 is also in communication with a second inlet 165 for delivering purge gas to the second annular flow channel 163.
In this embodiment, the second gas homogenizing ring 161 is disposed below the heating plate 130, and the second gas homogenizing ring 161 is provided with the plurality of second gas outlet holes 167, so that the cleaning gas can be conveyed from the bottom of the heating plate 130 into the process chamber 111, and cleaning of the bottom surface of the heating plate 130 and cleaning of the bottom surface of the process chamber 111 can be better realized.
In this embodiment, the plurality of second air outlet holes 167 are disposed on a side of the second air balancing ring 161 near the heating plate 130.
Referring to fig. 1 and 3, in this embodiment, a plurality of second air outlet holes 167 are disposed on a side of the second air balancing ring 161 near the heating plate 130, so that the air flowing out of the second air outlet holes 167 can be directly blown onto the bottom surface of the heating plate 130, and cleaning of the bottom surface of the heating plate 130 can be better achieved. After the bottom surface of the heating plate 130 is disturbed, the heating plate 130 can downwards disturbed the cleaning gas, so that the bottom surface of the process chamber 111 can be further cleaned.
Referring to fig. 1, in the present embodiment, the semiconductor processing apparatus 100 further includes a shower plate 171, the shower plate 171 is disposed below the first gas-distributing ring 153, and a plurality of through holes are disposed on the shower plate 171.
The shower plate 171 is provided in this embodiment to uniformly flow the gas.
In this embodiment, the shower plate 171 is made of quartz.
Referring to fig. 1, in the present embodiment, the semiconductor processing apparatus 100 further includes a quartz window 173, and the quartz window 173 is installed at an opening of the process chamber 111. The cleaning assembly further includes a set of UV lamps 175, the set of UV lamps 175 rotatably mounted above the quartz window 173. The provision of the UV lamp set 175 may better enable cleaning.
In this embodiment, the cleaning gas may be ozone or the like.
Referring to fig. 1-3, next, the present embodiment further provides a cleaning method of the semiconductor processing apparatus 100, which is based on the semiconductor processing apparatus 100 of the above embodiment. The method comprises the following steps:
s1, controlling the heating plate 130 to heat;
s2, controlling the heating plate 130 to move towards the direction approaching to the cleaning assembly, and controlling the cleaning assembly to introduce cleaning gas into the process chamber 111 to complete cleaning.
The heating plate 130 is controlled to heat, so that the cleaning efficiency of the cleaning gas can be improved, and the heating plate 130 can be moved towards the cleaning assembly, so that the surface of the heating plate 130 can be cleaned better by using the cleaning gas.
Typically the heating temperature of the hotplate 130 is between 200 deg.c and 4000 deg.c.
Referring to fig. 1-3, in this embodiment, step S2 includes the following sub-steps:
s21, the heating plate 130 is controlled to move in a direction approaching the first gas homogenizing ring 153, so that the distance between the first gas homogenizing ring 153 and the heating plate 130 is within a first preset range.
The first preset range may typically be 5mm-40mm. Specifically, the pressure and flow rate of the cleaning gas can be selected according to the conditions.
S22, controlling the air supply device to send cleaning air into the first air homogenizing ring 153 at a first preset pressure, exhausting the cleaning air by using the air exhaust holes to enable the concentration of the cleaning air in the process chamber 111 to be within a first preset concentration range, enable the flow of the cleaning air to be within a first preset flow range, and maintaining the air supply of the cleaning air into the first air homogenizing ring 153 after a first preset time.
Typically the first preset pressure may be selected between 1ttorr and 5ttorr, with a specific more practical degree of cleanliness being selected. The value range of the first preset concentration can be 100g/m 3 -400g/m 3 Between them. The first predetermined flow range may be 8000sccm to 30000sccm. The first preset duration may be between 20s and 120 s.
S23, controlling the heating plate 130 to move towards the direction approaching the second gas homogenizing ring 161 so that the distance between the second gas homogenizing ring 161 and the heating plate 130 is within a second preset range;
the second preset range may typically be 5mm-40mm. Specifically, the pressure and flow rate of the cleaning gas can be selected according to the conditions.
And S24, controlling the air supply equipment to send the cleaning air into the second air homogenizing ring 161 at a second preset pressure, exhausting the cleaning air by utilizing the air exhaust holes to enable the concentration of the cleaning air in the process chamber 111 to be in a second preset concentration range, enable the flow of the cleaning air to be in a second preset flow range, and stopping the feeding of the cleaning air into the second air homogenizing ring 161 after maintaining the second preset time. Repeating the steps S21-S24 for a plurality of times until the cleanliness reaches the requirement.
The second preset pressure may typically be selected between 4ttorr and 10ttorr, with a specific more practical degree of cleanliness. The value range of the second preset concentration can be 100g/m 3 -400g/m 3 Between them. The second preset flow range may be 8000sccm to 30000sccm. The second preset duration may be between 20s and 120 s.
In this embodiment, step S22 further includes the sub-steps of:
s221, controlling the air supply equipment to send cleaning gas into the first air homogenizing ring 153 at a first preset pressure, exhausting the cleaning gas by utilizing the air exhaust holes to enable the concentration of the cleaning gas in the process chamber 111 to be in a first preset concentration range and enable the flow of the cleaning gas to be in a first preset flow range, controlling the UV lamp group 175 to continuously rotate, and keeping the cleaning gas to be continuously fed into the first air homogenizing ring 153 after a first preset time.
The present implementation allows for more efficient cleaning of ozone by rotating the illumination process chamber 111 with the UV lamp assembly 175. The reason why the lamp is not turned on in step S24 is that the UV lamp set 175 does not radiate the area under the heating plate 130, which saves energy.
In this embodiment, the second preset pressure is greater than the first preset pressure. The cleaning gas can better stay in the process chamber 111, so that the adhesion of the surface of the area between the heating plate 130 and the bottom surface of the process chamber 111 can be sufficiently cleaned.
In summary, the embodiment of the application provides a semiconductor process apparatus 100 and a cleaning method thereof, wherein a gas cleaning assembly 150 is installed in a process chamber 111 of an apparatus body 110, so that cleaning gas can be introduced into the process chamber 111 by using the gas cleaning assembly 150, and then the process chamber 111 and a heating plate 130 arranged in the process chamber 111 can be cleaned rapidly and comprehensively by matching with the use of the heating plate 130.
The present application is not limited to the above embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present application are intended to be included in the scope of the present application. Therefore, the protection scope of the application is subject to the protection scope of the claims.

Claims (11)

1. A semiconductor processing apparatus comprising an apparatus body (110), a heating plate (130), and a gas cleaning assembly (150);
the equipment body (110) is provided with a process chamber (111);
the heating plate (130) is movably arranged in the process chamber (111);
the gas cleaning assembly (150) is arranged in the process chamber (111) so as to introduce cleaning gas into the process chamber (111) to clean adherends adhered to the side wall of the process chamber (111) and the heating plate (130).
2. The semiconductor processing apparatus of claim 1, wherein the gas cleaning assembly (150) comprises a conduit (151) and a first gas distribution ring (153), the first gas distribution ring (153) being disposed within the process chamber (111) and above the heating plate (130) and at a top of the process chamber (111);
a first annular flow passage (155) is formed in the first gas equalizing ring (153), and a first gas inlet (157) and a plurality of first gas outlet holes (159) are formed in the first gas equalizing ring;
the pipeline (151) is communicated with the first air inlet (157) and can convey cleaning gas to the first annular flow channel (155);
the bottom wall of the process chamber (111) is provided with an extraction opening (113).
3. The semiconductor processing apparatus of claim 2, wherein a plurality of said first gas outlet holes (159) are provided at an inner periphery of said first gas distribution ring (153).
4. A semiconductor process apparatus according to claim 2 or 3, wherein the gas cleaning assembly (150) further comprises a second gas homogenizing ring (161), the second gas homogenizing ring (161) being arranged at the bottom of the process chamber (111) below the heating plate (130);
a second annular flow passage (163) is formed in the second air homogenizing ring (161), and a second air inlet (165) and a plurality of second air outlet holes (167) are formed;
the pipe (151) is also in communication with the second inlet (165) and is configured to deliver purge gas to the second annular flow path (163).
5. The semiconductor processing apparatus of claim 4, wherein a plurality of said second gas outlet holes (167) are each disposed on a side of said second gas distribution ring (161) adjacent to said heating plate (130).
6. A semiconductor process apparatus according to claim 2 or 3, further comprising a shower plate (171), said shower plate (171) being arranged below said first gas homogenizing ring (153), and said shower plate (171) being provided with a plurality of through holes.
7. A semiconductor process apparatus according to claim 2 or 3, further comprising a quartz window (173), the quartz window (173) being mounted to an opening of the process chamber (111);
the cleaning assembly further includes a UV lamp set (175), the UV lamp set (175) being rotatably mounted above the quartz window (173).
8. A method of cleaning semiconductor processing equipment, applied to the semiconductor processing equipment of any one of claims 1-7, the method comprising:
controlling the heating plate (130) to heat;
the heating plate (130) is controlled to move towards a direction approaching the gas cleaning assembly, and the cleaning assembly is controlled to introduce cleaning gas into the process chamber (111) to complete cleaning.
9. The cleaning method of a semiconductor processing apparatus according to claim 8, wherein the gas cleaning assembly (150) includes a pipe (151) and a first gas homogenizing ring (153), the first gas homogenizing ring (153) is disposed in the process chamber (111) and is located above the heating plate (130) and at the top of the process chamber (111), a first annular flow channel (155) is formed in the first gas homogenizing ring (153), and a first gas inlet (157) and a plurality of first gas outlet holes (159) are provided, the pipe (151) is communicated with the first gas inlet (157) and can convey cleaning gas to the first annular flow channel (155), and a bottom wall of the process chamber (111) is provided with a pumping port (113);
the gas cleaning assembly (150) further comprises a second gas homogenizing ring (161), wherein the second gas homogenizing ring (161) is arranged at the bottom of the process cavity (111) and is positioned below the heating plate (130); a second annular flow passage (163) is formed in the second air homogenizing ring (161), and a second air inlet (165) and a plurality of second air outlet holes (167) are formed; the pipeline (151) is also communicated with the second air inlet (165) and can convey cleaning gas to the second annular flow channel (163), and a plurality of second air outlet holes (167) are arranged on one side of the second air homogenizing ring (161) close to the heating disc (130);
the step of controlling the heating plate (130) to move towards the direction approaching the cleaning assembly and controlling the cleaning assembly to introduce cleaning gas into the process chamber (111) to complete cleaning comprises:
controlling the heating plate (130) to move towards the direction approaching the first gas homogenizing ring (153) so as to enable the distance between the first gas homogenizing ring (153) and the heating plate (130) to be within a first preset range;
controlling an air supply device to send cleaning gas into the first air homogenizing ring (153) at a first preset pressure, exhausting by utilizing an air exhaust hole to enable the concentration of the cleaning gas in the process cavity (111) to be in a first preset concentration range, enable the flow of the cleaning gas to be in a first preset flow range, and keeping the cleaning gas to be continuously led into the first air homogenizing ring (153) after a first preset time;
controlling the heating plate (130) to move towards the direction approaching the second gas homogenizing ring (161) so as to enable the distance between the second gas homogenizing ring (161) and the heating plate (130) to be within a second preset range;
controlling an air supply device to send cleaning gas into the second gas homogenizing ring (161) at a second preset pressure, exhausting by utilizing an air exhaust hole to enable the concentration of the cleaning gas in the process chamber (111) to be in a second preset concentration range, enable the flow of the cleaning gas to be in a second preset flow range, and keeping the second preset time before finally introducing the cleaning gas into the second gas homogenizing ring (161);
the above steps are repeatedly performed a plurality of times.
10. The method of cleaning a semiconductor processing apparatus of claim 9, further comprising a quartz window (173), the quartz window (173) being mounted to an opening of the process chamber (111), the cleaning assembly further comprising a UV lamp set (175), the UV lamp set (175) being rotatably mounted above the quartz window (173);
the step of controlling the gas supply device to send cleaning gas into the first gas homogenizing ring (153) at a first preset pressure, and exhausting the cleaning gas by using the air exhaust holes to enable the concentration of the cleaning gas in the process chamber (111) to be in a first preset concentration range, enable the flow of the cleaning gas to be in a first preset flow range, and maintain the first preset time comprises the following steps:
the air supply equipment is controlled to send cleaning gas into the first air homogenizing ring (153) at a first preset pressure, the air suction holes are used for sucking air to enable the concentration of the cleaning gas in the process cavity (111) to be in a first preset concentration range and the flow of the cleaning gas to be in a first preset flow range, the UV lamp set (175) is controlled to continuously rotate, and the cleaning gas is finally introduced into the first air homogenizing ring (153) after the first preset time is maintained.
11. The method of claim 9, wherein the second predetermined pressure is greater than the first predetermined pressure.
CN202311165221.XA 2023-09-11 2023-09-11 Semiconductor process equipment and cleaning method thereof Pending CN117153729A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202311165221.XA CN117153729A (en) 2023-09-11 2023-09-11 Semiconductor process equipment and cleaning method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202311165221.XA CN117153729A (en) 2023-09-11 2023-09-11 Semiconductor process equipment and cleaning method thereof

Publications (1)

Publication Number Publication Date
CN117153729A true CN117153729A (en) 2023-12-01

Family

ID=88886644

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202311165221.XA Pending CN117153729A (en) 2023-09-11 2023-09-11 Semiconductor process equipment and cleaning method thereof

Country Status (1)

Country Link
CN (1) CN117153729A (en)

Similar Documents

Publication Publication Date Title
TWI708315B (en) High temperature substrate pedestal module and components thereof
TWI689615B (en) Apparatus for supplying process gases and processing semiconductor wafers
US9617640B2 (en) Apparatus and methods for injector to substrate gap control
CN100593840C (en) Heating treatment apparatus, heater and manufacturing method thereof
CN105624646B (en) It is eliminated by the valve manifold blind pipe of reentrant flow path
CN107429393A (en) Atomic layer deposition chambers with heat lid
CN107610996A (en) Reduce collar, Conic nozzle and/or the top plate of lining treatment system recycling
CN101896995A (en) Thermal reactor with air-flow distribution of improvement
CN103493185A (en) Apparatus and method for UV treatment, chemical treatment, and deposition
KR20140023934A (en) Multiple level showerhead design
CN101605925A (en) The multizone gas distributing system that is used for treatment system
US8883406B2 (en) Method for using a purge ring with split baffles in photonic thermal processing systems
CN106676499B (en) MOCVD gas spray header pretreatment method
CN104395498A (en) Atomic layer deposition with rapid thermal treatment
CN104299929A (en) Systems and methods for in-situ wafer edge and backside plasma cleaning
CN107785283B (en) Heating chamber and semiconductor processing equipment
CN100471990C (en) Film forming method and film forming device using plasma CVD
CN104099583B (en) A kind of air intake installation, reaction chamber and plasma processing device
KR20050078985A (en) Chemical vapor deposition apparatus and film deposition method
TW202125677A (en) Plasma enhanced anneal chamber for wafer outgassing
CN117153729A (en) Semiconductor process equipment and cleaning method thereof
CN104848668A (en) Wafer drying system
CN109576784A (en) A kind of preparation method and device of SiC epitaxial layer
US20170096738A1 (en) Diffuser temperature control
JP2003273020A (en) Substrate-processing method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination