CN117116640B - Preparation process of chip substrate with power inductor and product thereof - Google Patents
Preparation process of chip substrate with power inductor and product thereof Download PDFInfo
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- CN117116640B CN117116640B CN202311072980.1A CN202311072980A CN117116640B CN 117116640 B CN117116640 B CN 117116640B CN 202311072980 A CN202311072980 A CN 202311072980A CN 117116640 B CN117116640 B CN 117116640B
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- power inductor
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/02—Casings
- H01F27/022—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/24—Magnetic cores
- H01F27/255—Magnetic cores made from particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/29—Terminals; Tapping arrangements for signal inductances
- H01F27/292—Surface mounted devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/30—Fastening or clamping coils, windings, or parts thereof together; Fastening or mounting coils or windings on core, casing, or other support
- H01F27/306—Fastening or mounting coils or windings on core, casing or other support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/40—Structural association with built-in electric component, e.g. fuse
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/40—Structural association with built-in electric component, e.g. fuse
- H01F27/402—Association of measuring or protective means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/005—Impregnating or encapsulating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/0206—Manufacturing of magnetic cores by mechanical means
- H01F41/0246—Manufacturing of magnetic circuits by moulding or by pressing powder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
- H01F41/10—Connecting leads to windings
Abstract
The invention relates to the technical field of microelectronic devices, in particular to a preparation process of a chip substrate with a power inductor and a product thereof, comprising the following preparation steps: s1, preparing a die with a groove, paving magnetic powder into the groove, placing a coil on the surface of the magnetic powder, stacking the magnetic powder, enabling the coil to be completely wrapped by the magnetic powder, and covering a layer of FPC semi-cured soft integrated circuit board on the surface of the magnetic powder layer to obtain a magnetic powder coil; s2, cutting to obtain a magnetic ring wrapped with a single coil; s3, coating an insulating agent on the surface of the magnetic coil, which is not covered by the semi-cured circuit board, so that two ends of a single coil are exposed to obtain the magnetic coil with pins; s4, metal layers are plated on the outer surface of the magnetic ring with the pins at intervals, and the chip substrate with the power inductor is obtained. By the process, devices such as chips, resistance and capacitance and the like can be welded on the surface of the chip substrate with the power inductor, instead of directly welding the chips, the resistance and the capacitance and the like on the surface of the PCB, the using area of the PCB is reduced, and the process is more suitable for high-end electronic products.
Description
Technical Field
The invention relates to the technical field of microelectronic devices, in particular to a preparation process of a chip substrate with a power inductor and a product thereof.
Background
A chip, also called a microcircuit, an integrated circuit, a microchip, or the like, is a circuit module that integrates various electronic components on a silicon board to realize a certain specific function, and is also the most important part in electronic equipment, and performs the functions of operation and storage. In practical application, the chip and the inductor are commonly applied to electronic products, in the design process of the circuit, the chip can provide complex functions, the inductor is positioned in the power supply module and mainly plays a role in supplying power to the front end of the chip so as to maintain the normal operation of various chips in the main board and the display card.
Conventional chips and inductors are used in electronics where the inductor is made of a conductive material around the core, and the core may be removed or replaced with a ferromagnetic material. Because of the structure of the inductor, the chip and the inductor need to be arranged on the surface of the PCB in a specific mode when in use, namely, the inductor and the chip are positioned on the same plane, and the inductor can provide stable current in the arrangement mode.
Disclosure of Invention
In order to further reduce the area of the chip and the inductor on the PCB, the application provides a preparation process of a chip substrate with a power inductor and a product thereof.
In a first aspect, the present application provides a process for manufacturing a chip substrate with a power inductor, which adopts the following technical scheme:
the preparation process of the chip substrate with the power inductor comprises the following preparation steps:
s1, preparing a die with a groove, spreading a layer of magnetic powder into the groove, placing a coil on the surface of the magnetic powder, stacking a layer of magnetic powder again, enabling the coil to be completely wrapped by the magnetic powder to form a magnetic powder layer with the coil inside, and finally covering a layer of FPC semi-solidified soft integrated circuit board on the surface of the magnetic powder to obtain a magnetic powder coil;
s2, cutting the magnetic powder coil to obtain a magnetic coil wrapped with a single coil;
s3, coating an insulating agent on the surface of the magnetic coil, which is not covered by the semi-cured circuit board, to obtain an insulating layer, and exposing two ends of the single coil to obtain the magnetic coil with pins;
s4, metal layers are plated on the outer surface of the magnetic ring with the pins at intervals, and the chip substrate with the power inductor is obtained.
By adopting the technical scheme, the chip, the resistance-capacitance and other devices can be welded on the surface of the chip substrate with the power inductor, instead of directly welding the chip, the resistance-capacitance and the inductor on the surface of the PCB, so that the use area of the PCB is reduced, and the chip is more suitable for more high-end electronic products. Through designing the contact points on the top surface and the side surface of the substrate of the chip, the traditional inductance top surface and the side surface are provided with electric device connecting circuits, devices such as the chip, the resistance-capacitance and the like are connected on the top surface or the side surface, and the traditional two-dimensional direction arrangement of the devices can be converted into three-dimensional design. And the follow-up at the terminal customer only need this chip substrate with power inductance laminate practical can, convenient and practical, with low costs.
In the application, the coil is wrapped by the magnetic powder through the die, the single magnetic coil is formed by cutting, and then the processes of insulating agent, pin exposure, metal coating and the like are coated, so that the use of very fine equipment is not needed, the chip substrate with the power inductor prepared and obtained is stable in structure, and the chip substrate has the advantages of good magnetic shielding property, low loss, low impedance and the like.
The chip and the resistance-capacitance of the inductor prepared by the two methods cannot be welded, and the preparation process is complex, and the preparation process of the chip type laminated inductor is as follows: on the green body of alumina substrate or iron oxide substrate, metal copper paste or metal silver paste is printed by silk screen, except the first layer and the lower layer, each layer of substrate is only printed with one part of coil and 1/2 of one circle of big or small fish tail, and the inner substrates are all provided with oil through holes, so that the upper layer and the lower layer can be connected together during lamination to form a circle of continuous coil, further an inner spiral conductor of a patch type laminated inductor is formed, the inner spiral conductor is connected to a connecting wire of a motor outside the end of the substrate, and the patch type laminated inductor is obtained by firing. The advantages are that: has very good magnetic shielding property, high processing sintering density, firmness and drop resistance. The defect is that the processing yield is lower, the cost is very high, and the inductance is smaller. The inductor in the application does not need sintering, and has the advantages of high yield, large inductance value, low cost and simple and convenient operation process.
The preparation process of the integrally formed inductor has the advantages that: the formed inductor is firm and not easy to break, the magnetic circuit is closed, and the inductor has the advantages of good magnetic shielding property, EMI performance, low loss, resistance group and the like. However, the molding process is complicated, requires elaborate equipment and technical support, and is costly. The preparation process of the integrated inductor comprises the following steps: the method comprises the steps of firstly welding a wound coil onto a sheet foot by using electric current fusion welding, then placing the spot-welded sheet into a die, using a hydraulic punching machine to wrap iron powder for stamping forming, using a sand blasting machine to spray glass sand to polish the surface of a formed product, spraying paint on the surface of the formed product, finally cutting off the rest sheets of the formed product by using automatic equipment, and bending the end foot to be flatly attached to the surface of the product. Each of the above steps requires the use of complex equipment and high-level technology, which can be prepared by only a few manufacturers. The coil is not required to be welded to the tablet pin by using current fusion welding, and polishing is not required, so that compared with the traditional integrated point inductor, the coil is less in equipment, less in preparation steps and more suitable for being produced by most factories.
Preferably, the magnetic powder used in the step S1 is composed of FeSi ferrosilicon soft magnetic powder and a binder in percentage by weight (80% -97%): (3% -20%) and is prepared by mixing.
By adopting the technical scheme, the dosage of the binder and the FeSi iron silicon soft magnetic powder is optimized, so that the bonding of the FeSi iron silicon soft magnetic powder is facilitated, the density of the FeSi iron silicon soft magnetic powder is improved, the magnetic conductivity and the DC bias performance are further improved, and the loss is reduced.
Preferably, the binder is prepared from rosin resin, organic silicon resin and solvent according to the following (60% -80%): (10% -30%): (5% -12%) and is prepared by mixing.
Preferably, the rosin resin has a viscosity of 3500 to 4000mpa.s (25 ℃) and an acid value of 7 to 8mgKOH/g.
Preferably, the silicone resin has a viscosity of 25-1000mpa.s (25 ℃).
Preferably, the solvent is one of ethyl acetate, toluene, diethyl ether, ethanol or methanol.
By adopting the technical scheme, the viscosity and the fluidity of the adhesive are improved, so that the formed FeSi iron silicon soft magnetic powder is stably bonded, the density and the magnetic permeability of the magnetic powder coil are improved, the inductance value is increased, and meanwhile, the bonding stability of the magnetic powder layer, the insulating layer and the FPC semi-solidified soft integrated circuit board is facilitated.
Preferably, the insulating agent used in step S3 is prepared by the following method:
1) Dissolving ethyl orthosilicate in diethyl ether to obtain an ethyl orthosilicate-diethyl ether solution;
2) Grinding inorganic insulating particles to an average particle size of 50-100um to obtain powder, heating the powder, tween and water to 70-80 ℃ until the Tween is completely dissolved to obtain suspension;
3) Cooling the suspension to 35-40deg.C, adding tetraethyl orthosilicate-diethyl ether solution under stirring, stirring for 20-30min, adding triethylamine until pH is 9.5-10, stirring for 1-2 hr, cooling, centrifuging, filtering, leaching, and drying to obtain modified powder;
4) Mixing epoxy resin, rosin resin, diluent and coupling agent, stirring uniformly, adding curing agent and modified powder, and stirring uniformly to obtain the insulating agent.
By adopting the technical scheme, the insulating property and the bonding property of the insulating layer are improved, so that the chip substrate with the power inductor can bear static impact of more than 2KV, and the insulating layer is prevented from falling off in the use process. Meanwhile, the insulating layer has good heat dissipation performance, so that the inductance temperature is effectively prevented from being too high, and the bonding stability of the metal layer and the insulating layer is improved.
Wherein, the insulating property of the insulating layer is improved by adding inorganic insulating particles, and meanwhile, the surface of the insulating layer can have slight roughness, so that the stable adhesion of the metal layer is facilitated. Further, by optimizing the average particle diameter of the inorganic insulating particles, the surface of the insulating layer is not too coarse or too smooth, the surface is too coarse, the use is not facilitated, and the surface is too smooth, the adhesion of the metal layer is not facilitated.
The insulating agent in the application also uses epoxy resin and rosin resin, and the epoxy resin and the rosin resin are used cooperatively, so that the insulating performance and the adhesive performance of the insulating layer can be further improved. However, since the epoxy resin and the rosin resin are relatively viscous substances, the particle size of the ground powder is small, and the mixing uniformity of the three is small. In the application, the fluidity and the dispersibility of the powder are greatly improved by using the tetraethoxysilane, the diethyl ether, the powder, the tween and the water through a specific method, and when the powder is used with the epoxy resin and the rosin resin, a homogeneous mixed system can be formed, so that the method is favorable for the follow-up operation steps.
Preferably, the insulating agent is prepared from the following raw materials in parts by weight:
5-12 parts of tetraethoxysilane
20-30 parts of diethyl ether
15-20 parts of inorganic insulating particles
Tween 2-5 parts
20-40 parts of water
40-50 parts of epoxy resin
10-20 parts of rosin resin
10-20 parts of diluent
3-7 parts of coupling agent
1-2 parts of curing agent.
Preferably, the inorganic insulating particles include at least one of mica, alumina, silicate, silica, asbestos, marble, porcelain, or glass.
Through adopting above-mentioned technical scheme, optimize the raw materials quantity of preparation insulating agent for when forming the insulation and having good insulating heat dissipation effect, also can be connected with the magnetism circle that the parcel has single coil is stable, prevent to receive the insulating layer drop of high temperature influence in the use. On the other hand, the roughness of the surface of the insulating layer is more moderate, which is more favorable for the adhesion of the metal layer.
Preferably, the viscosity of the epoxy resin is 2000-5000mpa.s (25 ℃), the solid content is 42-62%, and the epoxy value is 5-20eq/100g.
By adopting the technical scheme, the bonding stability of the insulating layer and the magnetic powder is further improved, and the phenomenon that the insulating layer falls off in the use process is prevented. Meanwhile, the bonding stability of the insulating layer and the metal layer is also improved, and the metal layer is prevented from falling off or swelling.
Preferably, in step S1, the FPC semi-cured flexible printed circuit board is covered on the surface of the magnetic powder by hot pressing, and the hot pressing temperature is 150-180 ℃.
By adopting the technical scheme, the FPC semi-cured flexible integrated circuit board can be stably connected with magnetic powder, and the FPC semi-cured flexible integrated circuit board is prevented from tilting or falling off. The temperature is too low, so that the FPC semi-cured soft integrated circuit board is easily unstable in adhesion; the temperature is too high, which can damage the FPC semi-cured flexible integrated circuit board.
Preferably, the metal plating layer in the step S4 adopts a mode of vacuum sputtering a metal layer or adhering low-temperature silver paste.
By adopting the technical scheme, the metal layers can interconnect the electronic components or devices according to a certain layout. The metal layer can be stably adhered to the surfaces of the FPC semi-cured soft integrated circuit board and the insulating layer, so that the welding of electric devices such as chips or capacitors is facilitated, and the use is convenient.
In a second aspect, the present application provides a chip substrate with a power inductor, which adopts the following technical scheme:
the chip substrate with the power inductor is prepared by the preparation process of the chip substrate with the power inductor in the first aspect.
By adopting the technical scheme, the top surface and the side surface of the chip substrate with the power inductor can be welded with devices such as chips and capacitors, the devices such as the chips and the capacitors on the surface of the PCB are reduced, the area of the PCB is reduced, and the PCB uses higher-end electronic equipment.
In summary, the present application has the following beneficial effects:
1. in this application, wrap up the coil in the magnetic powder completely through the magnetic powder, form the magnetic powder layer that is equipped with the coil in the formation, bond FPC semi-cured flexible circuit board at magnetic powder layer surface, the cutting, the parcel has the magnetic circle of single coil, all coat the insulating agent with the face that the magnetic circle does not cover semi-cured circuit board again, obtain the insulating layer, expose the both ends of single coil again, obtain the magnetic circle with the pin, with the magnetic circle surface interval metal coating layer that has the pin at last, obtain the chip substrate with power inductance.
2. According to the preparation method, the modified powder is prepared from the tetraethoxysilane, the diethyl ether, the inorganic insulating particles, the Tween and the water, so that the fluidity and the dispersibility of the powder are greatly improved, and the modified powder is used with the epoxy resin and the rosin resin, so that the chip substrate with the power inductor can bear electrostatic impact of more than 2KV, and meanwhile, the insulating layer and the metal layer are prevented from falling off in the use process.
Drawings
Fig. 1 is a cross-sectional view of the magnet ring of the single coil.
Fig. 2 is a schematic diagram of the overall structure of a chip substrate with power inductors.
Reference numerals: 1. a magnetic powder layer; 2. a coil; 3. an insulating layer; 4. FPC semi-cured soft integrated circuit board; 5. a metal layer.
Detailed Description
Examples
Example 1
The preparation process of the chip substrate with the power inductor comprises the following preparation steps:
s1, preparing a die with a groove, spreading a layer of magnetic powder into the groove, placing a coil 2 on the surface of the magnetic powder, stacking a layer of magnetic powder again, enabling the coil 2 to be completely wrapped by the magnetic powder, forming a magnetic powder layer 1 with the coil 2 inside, finally covering a layer of FPC semi-cured soft integrated circuit board 4 on the surface of the magnetic powder, covering the FPC semi-cured soft integrated circuit board 4 on the surface of the magnetic powder layer 1 in a hot-pressing mode, and obtaining a magnetic powder coil at a hot-pressing temperature of 150 ℃;
s2, cutting the magnetic powder coil to obtain a magnetic coil wrapped with a single coil, wherein the cross section of the magnetic coil of the single coil is shown in FIG. 1;
s3, coating an insulating agent on the surface of the magnetic coil, which is not covered by the semi-cured circuit board, to obtain an insulating layer 3, and exposing two ends of the single coil to obtain the magnetic coil with pins;
s4, the outer surface of the magnetic ring with the pins is provided with a metal layer 5 at intervals, and a chip substrate with the power inductor is obtained by adopting a vacuum sputtering metal layer mode, as shown in FIG. 2, the height of the chip substrate with the power inductor in the application is 0.9mm, the width is 2.9mm, and the length is 2.9mm.
Wherein, the magnetic powder used in the step S1 is prepared from FeSi ferrosilicon soft magnetic powder and a binder in the weight percentage of 80 percent: 20% of the FeSi iron silicon soft magnetic powder is prepared by mixing, wherein the FeSi iron silicon soft magnetic powder is 0.80Kg, and the binder is 0.20Kg.
The binder is prepared from rosin resin, organic silicon resin and solvent in a weight percentage of 60%:30%:10% of the rosin resin is prepared by mixing 0.60Kg of the rosin resin, 0.30Kg of the organosilicon resin and 0.10Kg of the solvent.
The rosin resin had a viscosity of 3500mpa.s (25 ℃ C.) and an acid value of 7mgKOH/g.
The silicone resin had a viscosity of 25mPa.s (25 ℃).
The solvent is ethyl acetate.
The insulating agent used in step S3 is prepared by the following method:
1) 0.05Kg of ethyl orthosilicate is dissolved in 0.20Kg of diethyl ether to obtain an ethyl orthosilicate-diethyl ether solution;
2) Grinding inorganic insulating particles (mica) of 0.15Kg to an average particle size of 50um to obtain powder, heating the powder, tween of 0.02Kg and water of 0.20Kg to 70 ℃ until Tween is completely dissolved to obtain suspension;
3) Cooling the suspension to 35 ℃, adding an ethyl orthosilicate-diethyl ether solution while stirring, stirring for 20min after the addition, adding 0.05Kg of triethylamine until the pH is 9.5, continuing stirring for 1h, cooling, centrifugally filtering, leaching and drying to obtain modified powder;
4) Mixing epoxy resin 0.40Kg, rosin resin 0.10Kg, diluent 0.10Kg (ethyl acetate) and coupling agent 0.03Kg (N-aminoethyl-3-aminopropyl methyl dimethoxy silane), stirring uniformly, adding curing agent 0.01Kg (aniline) and modified powder, and stirring uniformly to obtain the insulating agent.
The viscosity of the epoxy resin was 2000mpa.s (25 ℃ C.), the solid content was 42% and the epoxy value was 5eq/100g.
Examples 2-3 differ from example 1 in that the amounts of the raw materials used to prepare the magnetic powder are different, see table 1 for the specific differences:
TABLE 1 amount of magnetic powder used in examples 1-3
Examples 4-5 differ from example 1 in that the amounts of raw materials used to prepare the binder are different, see Table 2:
TABLE 2 amounts of binder used in examples 1, 4-5
Examples 6 to 7 differ from example 1 in that the amounts of the raw materials for preparing the insulating agent are different, and the specific differences are shown in Table 3:
TABLE 3 amounts of binder used in examples 1, 6-7
Example 8
The preparation process of the chip substrate with the power inductor is different from the embodiment 1 in that the FeSi iron silicon soft magnetic powder and the binder are 60% by weight: 40%) and 0.60Kg of FeSi iron silicon soft magnetic powder, 0.40Kg of binder, and the rest of the preparation steps and experimental raw materials are the same as those in example 1.
Example 9
The process for manufacturing a chip substrate with a power inductor is different from that of example 1 in that the rosin resin in the binder is replaced by an equal amount of epoxy resin, and the rest of the manufacturing steps and experimental raw materials are the same as those of example 1.
The viscosity of the epoxy resin was 2000mpa.s (25 ℃ C.), the solid content was 42% and the epoxy value was 5eq/100g.
Example 10
The process for preparing a chip substrate with power inductance is different from example 1 in that step 1) is omitted in preparing an insulating agent, the same amount of diethyl ether used in step 1) replaces the ethyl orthosilicate-diethyl ether solution, and the rest of preparation steps and experimental raw materials are identical to those of example 1.
Example 11
The manufacturing process of the chip substrate with the power inductor is different from that of the embodiment 1 in that in the step S1, the FPC semi-cured flexible integrated circuit board is covered on the surface of the magnetic powder in a hot pressing mode, the hot pressing temperature is 120 ℃, and the rest of the manufacturing steps and experimental raw materials are the same as those of the embodiment 1.
Example 12
The process for preparing a chip substrate with a power inductor is different from example 1 in that epoxy resin in the insulating agent has a viscosity of 1200mpa.s (25 ℃), and the rest of experimental steps and raw materials are the same as those of example 1.
Example 13
The process for preparing a chip substrate with a power inductor is different from that of example 1 in that the average particle diameter of the inorganic insulating particles in the insulating agent after grinding is 40um, and the rest experimental steps and raw materials are the same as those of example 1.
Comparative example
Comparative example 1
The preparation process of the chip substrate with the power inductor is different from that of the embodiment 1 in that in the step 1, the surface of the magnetic powder is not covered with a layer of FPC semi-cured soft integrated circuit board, and the rest experimental steps and raw materials are the same as those of the embodiment 1.
Performance test
The chip substrates with power inductors prepared in examples 1 to 13 and comparative example 1 were subjected to a withstand voltage test, a high temperature test, a permeability test, and an inductance value test.
Detection method/test method
Magnetic permeability test: the permeability at 1kHz was tested using an agilent 4991B device, with a clamp of 16454a.
Magnetic loss: the magnetic loss was tested using a B-H tester SY-8212.
Inductance value test: the inductance value is tested by using HIOKI (model IM 7581), and the electric shock sensing electrode is arranged at two ends of the instrument, and the test conditions are as follows: the frequency is 100kHz, the voltage is 1V, and the inductance value can be directly read.
Withstand voltage test: the HEX301 dc withstand voltage insulation tester was used to test, prepare the chip substrates with power inductors prepared in examples 1 to 13 and comparative example 1, clamp the two sides of the chip substrate with power inductors with the positive and negative electrodes, select the "dc withstand voltage test", adjust the test conditions to DC2.0KV,60s, click test, read the test results, and repeatedly verify for 25 times.
Stability test: and welding the chip on the surface of the chip substrate with the power inductor, welding the capacitor and the side surface of the chip substrate with the power inductor, putting the chip and the capacitor into a cup, repeatedly shaking for 500 times, and observing whether the chip and the capacitor fall off or not.
High temperature resistance test: the chip substrates with power inductors prepared in examples 1 to 13 and comparative example 1 were placed in an environment at 120℃for 72 hours, taken out, and whether the insulating layer, the FPC semi-cured Flexible Printed Circuit (FPC) and the metal layer of the chip substrate with power inductor were bulged or peeled off was observed. The specific test data are shown in Table 4:
table 4 experimental data in examples 1-13 and comparative example 1
From examples 1-13 and comparative example 1 in combination with table 4, it can be seen that the chip substrate with power inductor prepared by the process of the present application can be soldered with a chip or a capacitor on its surface, and is stable and not falling off, so that the conventional two-dimensional direction arrangement component is converted into a three-dimensional design. Meanwhile, the traditional two-dimensional direction arrangement components are converted into three-dimensional design through the preparation of the magnetic field sensor, and the magnetic field sensor has high magnetic permeability, inductance and low magnetic loss.
Further, by optimizing the amounts of the binder and the FeSi iron silicon soft magnetic powder, the magnetic permeability and the inductance value of the chip substrate with the power inductance can be improved, and the magnetic loss of the chip substrate with the power inductance can be reduced.
Further, by optimizing the main components and the amount of the binder, the magnetic permeability and the inductance value of the chip substrate with the power inductor can be further improved, and the magnetic loss of the chip substrate with the power inductor is reduced, but the chip substrate with the power inductor can bulge in an environment of 120 ℃ for a long time.
Further, the voltage resistance, stability and high temperature resistance of the chip substrate with the power inductor can be improved by optimizing the main components and the dosage of the insulating agent.
The present embodiment is merely illustrative of the present application and is not intended to be limiting, and those skilled in the art, after having read the present specification, may make modifications to the present embodiment without creative contribution as required, but is protected by patent laws within the scope of the claims of the present application.
Claims (8)
1. The preparation process of the chip substrate with the power inductor is characterized by comprising the following preparation steps of:
s1, preparing a die with a groove, spreading a layer of magnetic powder into the groove, placing a coil on the surface of the magnetic powder, stacking a layer of magnetic powder again, enabling the coil to be completely wrapped by the magnetic powder to form a magnetic powder layer with the coil inside, and finally covering a layer of FPC semi-cured soft integrated circuit board on the surface of the magnetic powder layer to obtain a magnetic powder coil;
s2, cutting the magnetic powder coil to obtain a magnetic coil wrapped with a single coil;
s3, coating an insulating agent on the surface of the magnetic coil, which is not covered by the semi-cured circuit board, to obtain an insulating layer, and exposing two ends of the single coil to obtain the magnetic coil with pins;
s4, metal layers are plated on the outer surface of the magnetic ring with the pins at intervals, and a chip substrate with a power inductor is obtained;
the insulating agent used in step S3 is prepared by the following method:
1) Dissolving ethyl orthosilicate in diethyl ether to obtain an ethyl orthosilicate-diethyl ether solution;
2) Grinding inorganic insulating particles to an average particle size of 50-100um to obtain powder, heating the powder, tween and water to 70-80 ℃ until the Tween is completely dissolved to obtain suspension;
3) Cooling the suspension to 35-40deg.C, adding tetraethyl orthosilicate-diethyl ether solution under stirring, stirring for 20-30min, adding triethylamine until pH is 9.5-10, stirring for 1-2 hr, cooling, centrifuging, filtering, leaching, and drying to obtain modified powder;
4) Mixing epoxy resin, rosin resin, a diluent and a coupling agent, uniformly stirring, adding a curing agent and modified powder, and uniformly stirring to obtain an insulating agent;
the insulating agent is prepared from the following raw materials in parts by weight:
5-12 parts of tetraethoxysilane
20-30 parts of diethyl ether
15-20 parts of inorganic insulating particles
Tween 2-5 parts
20-40 parts of water
5-9 parts of triethylamine
40-50 parts of epoxy resin
10-20 parts of rosin resin
10-20 parts of diluent
3-7 parts of coupling agent
1-2 parts of curing agent.
2. The process for manufacturing a chip substrate with a power inductor according to claim 1, wherein: the magnetic powder used in the step S1 is prepared from FeSi iron silicon soft magnetic powder and a binder in percentage by weight (80% -97%): (3% -20%) and is prepared by mixing.
3. The process for manufacturing a chip substrate with power inductor according to claim 2, wherein: the adhesive is prepared from rosin resin, organic silicon resin and solvent in percentage by weight (60% -80%): (10% -30%): (5% -12%) and is prepared by mixing.
4. The process for manufacturing a chip substrate with a power inductor according to claim 1, wherein: the inorganic insulating particles include at least one of mica, alumina, silicate, silica, asbestos, marble, porcelain, or glass.
5. The process for manufacturing a chip substrate with a power inductor according to claim 1, wherein: the viscosity of the epoxy resin is 2000-5000mpa.s (25 ℃), the solid content is 42-62%, and the epoxy value is 5-20eq/100g.
6. The process for manufacturing a chip substrate with a power inductor according to claim 1, wherein: in the step S1, the FPC semi-cured soft integrated circuit board is covered on the surface of the magnetic powder in a hot pressing mode, and the hot pressing temperature is 150-180 ℃.
7. The process for manufacturing a chip substrate with a power inductor according to claim 1, wherein: in the step S4, the metal plating layer adopts a mode of sputtering a metal layer in vacuum or sticking low-temperature silver paste.
8. A chip substrate with power inductor, characterized in that: the chip substrate with the power inductor is prepared by the preparation process of the chip substrate with the power inductor according to any one of claims 1 to 7.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007081306A (en) * | 2005-09-16 | 2007-03-29 | Sumida Corporation | Sealed coil-type magnetic component and method of manufacturing same |
| JP5474251B1 (en) * | 2013-02-04 | 2014-04-16 | Ｎｅｃトーキン株式会社 | Magnetic core and inductor |
| KR20170140720A (en) * | 2016-06-13 | 2017-12-21 | 에이치엔에스파워텍 주식회사 | Inductor |
| CN107507702A (en) * | 2017-08-15 | 2017-12-22 | 合肥工业大学 | A kind of preparation method of inorganic oxide cladding iron-silicon-aluminum soft magnet powder core |
| CN108369850A (en) * | 2015-12-22 | 2018-08-03 | 伊顿智能动力有限公司 | Integrated polyphase power inductor with the winding not coupled and manufacturing method |
-
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- 2023-08-23 CN CN202311072980.1A patent/CN117116640B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007081306A (en) * | 2005-09-16 | 2007-03-29 | Sumida Corporation | Sealed coil-type magnetic component and method of manufacturing same |
| JP5474251B1 (en) * | 2013-02-04 | 2014-04-16 | Ｎｅｃトーキン株式会社 | Magnetic core and inductor |
| CN108369850A (en) * | 2015-12-22 | 2018-08-03 | 伊顿智能动力有限公司 | Integrated polyphase power inductor with the winding not coupled and manufacturing method |
| KR20170140720A (en) * | 2016-06-13 | 2017-12-21 | 에이치엔에스파워텍 주식회사 | Inductor |
| CN107507702A (en) * | 2017-08-15 | 2017-12-22 | 合肥工业大学 | A kind of preparation method of inorganic oxide cladding iron-silicon-aluminum soft magnet powder core |
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