CN117098298A - Wafer surface static eliminating device and method thereof - Google Patents

Wafer surface static eliminating device and method thereof Download PDF

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Publication number
CN117098298A
CN117098298A CN202311048479.1A CN202311048479A CN117098298A CN 117098298 A CN117098298 A CN 117098298A CN 202311048479 A CN202311048479 A CN 202311048479A CN 117098298 A CN117098298 A CN 117098298A
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China
Prior art keywords
wafer
power supply
circuit module
voltage
static electricity
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CN202311048479.1A
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Chinese (zh)
Inventor
梁晨锴
席阳
张洪彪
杨延德
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Dongfang Jingyuan Electron Ltd
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Dongfang Jingyuan Electron Ltd
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Priority to CN202311048479.1A priority Critical patent/CN117098298A/en
Publication of CN117098298A publication Critical patent/CN117098298A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05F—STATIC ELECTRICITY; NATURALLY-OCCURRING ELECTRICITY
    • H05F3/00—Carrying-off electrostatic charges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The application provides a wafer surface static electricity eliminating device and a method thereof, wherein the wafer surface static electricity eliminating device comprises an electrostatic chuck, a circuit module, a first power supply and a second power supply; the circuit module is connected to the electrostatic chuck, and the electrostatic chuck is used for fixing the wafer; the first power supply is controlled to be connected to the circuit module so that the first voltage provided by the first power supply can break down an oxide layer on the surface of the wafer through the circuit module; the second power supply is controlled to be connected to the circuit module so that the second voltage provided by the second power supply can eliminate the static electricity on the surface of the wafer through the circuit module. Because the scheme does not adopt mechanical piercing and does not need to use sharp objects to pierce the oxide layer, the surface of the wafer can be prevented from being worn, and the service life of the wafer can be prolonged.

Description

Wafer surface static eliminating device and method thereof
Technical Field
The application relates to the technical field of semiconductor manufacturing, in particular to a wafer surface static electricity eliminating device and a wafer surface static electricity eliminating method.
Background
Because of the difference in wafer processing technology, part of wafers are provided with electrostatic voltages with different magnitudes before entering the detection machine, the existence of the static electricity can generate an interference electromagnetic field between the wafers and the electron gun, and the electron beam emitted by the electron gun generates path deviation, so that the voltage difference between the acceleration voltage and the wafer voltage is caused, the image focusing is influenced, and the image defocus is caused, and even the measurement result is influenced.
Therefore, the wafer is subjected to static elimination in the first half of wafer processing, the existing static elimination technology is to measure the static voltage of the wafer surface in real time through a probe and perform relation fitting in the process of wafer transmission, and then the equipment front end module mechanically pierces an oxide layer on the wafer surface.
In view of this, the present application has been made.
Disclosure of Invention
The application provides a wafer surface static electricity eliminating device and a wafer surface static electricity eliminating method, which are used for solving the technical problem that the existing scheme can cause abrasion to a wafer and damage the service life of the wafer.
The application provides a wafer surface static electricity eliminating device, which comprises an electrostatic chuck, a circuit module, a first power supply and a second power supply; the circuit module is connected to the electrostatic chuck, and the electrostatic chuck is used for fixing the wafer; the first power supply is controlled to be connected to the circuit module so that the first voltage provided by the first power supply can break down an oxide layer on the surface of the wafer through the circuit module; the second power supply is controlled to be connected to the circuit module so that the second voltage provided by the second power supply can eliminate the static electricity on the surface of the wafer through the circuit module.
In this scheme, be used for fixed wafer through electrostatic chuck, the wafer is connected through connecting electrostatic chuck to the circuit module, when the circuit module is connected to first power through switching, first power provides first voltage and can break down the oxide layer on wafer surface, thereby the circuit module can switch on with the wafer, after the breakdown is accomplished, through switching the circuit module to be connected to the second power, the second power provides the second voltage for the circuit module, the static neutralization of second power and wafer surface this moment, thereby realize static elimination, because this scheme does not adopt machinery to impale, need not to use sharp object to impale the oxide layer, consequently, can avoid the wafer surface to be worn and torn, thereby can promote the life-span of wafer.
In a further aspect of the application, an electrostatic chuck includes a chuck body, a first pin, a second pin, and a third power supply; the first stitch sets up in the chuck body and connects in the third power, and the third power is used for supplying power for the chuck body through first stitch: the second pin is arranged on the chuck body, and one end of the second pin is connected to the circuit module, and the other end of the second pin is used for contacting the wafer.
In this scheme, the third power is connected the chuck body through first stitch to for chuck body power supply, the second stitch sets up in the chuck body, and contact wafer and circuit module, thereby the wafer can be connected with circuit module, is impacted in order to break down the oxide layer by the first voltage of first power, or is influenced in order to neutralize static by the second voltage of second power.
In a further aspect of the application, the first voltage is higher than the second voltage, the first power supply is a high voltage power supply, and the second power supply is a programmable power supply.
In the scheme, the first power supply is a high-voltage power supply so as to facilitate breakdown of the oxide layer, and the second power supply is a programmable power supply, so that the electrostatic magnitude of the surface of the wafer can be quantitatively eliminated.
In a further aspect of the present application, the wafer surface static electricity eliminating apparatus further includes a probe for detecting a static voltage of the wafer surface.
In the scheme, the probe can detect the voltage on the surface of the wafer in real time, the voltage detected by the probe can be matched with the programmable power supply to quantitatively eliminate the voltage on the surface of the wafer, and meanwhile, the probe can neutralize the static electricity on the surface of the wafer in the second voltage and then continuously detect the static electricity to confirm whether the static electricity is completely eliminated.
In a further scheme of the application, the circuit module comprises a first resistor, a second resistor and a voltmeter, wherein a plurality of first resistors connected in series are connected in parallel with a wafer conducted by the second pin, the voltmeter is connected in parallel with the plurality of first resistors connected in series, and the first power supply or the second power supply is connected in series with the second resistor and then is controlled to be connected into the circuit module.
In the scheme, a plurality of first resistors connected in series are connected in parallel with the wafer, and meanwhile, the voltmeter is connected in parallel with the wafer, when the first power supply applies the first voltage to the wafer to break down the oxide layer, the voltmeter is connected in parallel with the first resistor and the wafer, when the oxide layer breaks down, the detected value of the voltmeter changes, and at the moment, the connection between the first power supply and the circuit module can be cut off, so that the first voltage is prevented from continuously pressing the wafer, the wafer is prevented from being damaged, and meanwhile, static electricity on the surface of the wafer can be prevented from being influenced by the first voltage.
In a further aspect of the present application, the wafer surface static electricity eliminating device further includes an optical camera and a motion base, the optical camera is used for determining a current position of the wafer; the motion base is provided with an electrostatic chuck and is used for adjusting the position of a wafer on the electrostatic chuck so as to enable the wafer to be optically positioned.
In the scheme, the current position of the wafer can be monitored in real time through the optical camera, the electrostatic chuck provided with the wafer is fixed on the moving base, and when the optical camera determines that the position of the wafer needs to be adjusted, the center of the wafer can be driven to be positioned on the electron beam by controlling the movement of the moving base.
In a further scheme of the application, the wafer surface static electricity eliminating device further comprises a control module, wherein the control module is in communication connection with the voltmeter and is used for controlling the first power supply to be connected or disconnected with the circuit module and controlling the second power supply to be connected or disconnected with the circuit module.
In the scheme, when the first power supply breaks down the oxide layer by applying the first voltage to the wafer, when the oxide layer is broken down, the data of the voltmeter can change, at the moment, the voltmeter can send the broken down information of the oxide layer to the control module, and the control module breaks off the connection between the first power supply and the circuit module according to the information, so that the wafer can be prevented from being damaged by the high voltage of the first voltage, the service life of the wafer is influenced, and meanwhile, the second power supply and the circuit module can be conducted, so that static electricity of the wafer is eliminated.
The second aspect of the present application provides a wafer surface static electricity eliminating method, which is implemented based on the wafer surface static electricity eliminating device provided by the first aspect of the present application, and the method includes the following steps:
controlling the first power supply to be connected with the circuit module so that the first voltage provided by the first power supply electrically impacts the oxide layer of the wafer;
and controlling the second power supply to be connected with the circuit module so as to eliminate the static electricity on the surface of the wafer by the second voltage provided by the second power supply.
In a further aspect of the present application, before controlling the second power supply to be turned on with the circuit module so that the second voltage provided by the second power supply eliminates static electricity on the surface of the wafer, the method further includes:
in the process of controlling the electrostatic chuck to drive the wafer to move so as to perform optical positioning calibration on the wafer, controlling the probe to detect the measurement voltage on the surface of the wafer;
determining the distance between each measuring point and the center of the wafer based on the positions of the probe and the electron beam and the motion path of the electrostatic chuck;
and fitting a relation curve V-r between the measured voltage of the measuring point and the distance of the measuring point from the center of the wafer based on the measured voltage of each measuring point and the distance of each measuring point from the center of the wafer.
In the scheme, the probe measures the voltage measured on the wafer in the process of driving the wafer to move by the electrostatic chuck to perform optical positioning calibration on the wafer, so that the voltage measurement is more accurate, and the real-time electrostatic voltage on the surface of the wafer can be obtained by the data of V-r relation curve and the data acquired by the probe.
In a further aspect of the present application, controlling the second power supply to be turned on with the circuit module so that the second voltage provided by the second power supply eliminates static electricity on the surface of the wafer includes:
controlling the second power supply to be connected with the circuit module;
judging whether the first voltage is shocked to penetrate through an oxide layer of the wafer based on the circuit module;
under the condition that the first voltage electric shock penetrates through the oxide layer of the wafer, the electrostatic voltage of the wafer center point is obtained through the relation curve;
and controlling the second power supply to apply reverse voltage with the same magnitude and opposite charges as the electrostatic voltage of the center point of the wafer to the wafer so as to eliminate the static electricity on the surface of the wafer.
In the scheme, the circuit module judges whether the first voltage breaks down the oxide layer according to the change of the voltmeter data, after the oxide layer breaks down, the circuit module is switched to the second power supply, the electrostatic voltage of the center point of the wafer is obtained through the relation curve V-r, and at the moment, the second power supply is controlled to apply the electrostatic voltage to the wafer through the circuit module to neutralize the static electricity on the surface of the wafer, so that the static electricity on the surface of the wafer is eliminated.
In summary, the wafer surface static electricity eliminating device and the method thereof provided by the application have at least the following beneficial effects:
the electrostatic chuck is used for fixing the wafer, the circuit module is connected with the wafer through the electrostatic chuck, when the circuit module is connected to the first power supply through switching, the first power supply provides a first voltage to break down an oxide layer on the surface of the wafer, so that the circuit module can be conducted with the wafer, after breakdown is completed, the circuit module is switched and connected to a second power supply, the second power supply provides a second voltage for the circuit module, at the moment, the second power supply is used for neutralizing static electricity on the surface of the wafer, and therefore static electricity is eliminated.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below. It will be apparent to those skilled in the art that the drawings in the following description are of some embodiments of the application, and that other drawings may be obtained from these drawings without inventive effort.
Fig. 1 is a schematic structural diagram of a circuit module, a wafer and a power supply according to an embodiment of the present application;
FIG. 2 is a schematic diagram of a power supply according to an embodiment of the present application;
FIG. 3 is a schematic diagram of a wafer surface static eliminator according to an embodiment of the present application; and
fig. 4 is a schematic structural diagram of an electrostatic chuck according to an embodiment of the present application; and
fig. 5 is a flowchart illustrating steps of a method for removing static electricity on a wafer surface according to an embodiment of the present application.
The reference numerals are as follows:
10. a cavity; 20. a motion base; 30. an electrostatic chuck; 31. a first stitch; 32. a second stitch; 33. a chuck body; 40. an optical camera; 50. a probe; 60. an electron gun;
70. a circuit module; 71. a first resistor; 72. a voltmeter; 73. a second resistor;
80. a wafer;
90. a power supply; 91. a first power supply; 92. a second power supply; 93. and a third power supply.
Detailed Description
In the description of the present application, it should be understood that, if there are descriptions of terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating orientation or positional relationship, it should be understood that the orientation or positional relationship shown based on the drawings is merely for convenience of description and simplification of the description, and does not indicate or imply that the apparatus or element in question must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the application.
Furthermore, the presence of features defining "first" and "second" for descriptive purposes only, should not be interpreted as indicating or implying a relative importance or implicitly indicating the number of features indicated. Features defining "first", "second" may include at least one such defined feature, either explicitly or implicitly. If a description of "a plurality" is present, the generic meaning includes at least two, e.g., two, three, etc., unless specifically defined otherwise.
In the present application, unless explicitly stated and limited otherwise, terms such as "mounted," "connected," "secured," and the like are to be construed broadly. For example, the two parts can be fixedly connected, detachably connected or integrated; the connection may be mechanical connection, electrical connection, direct connection, indirect connection through an intermediate medium, communication between two elements or interaction relationship between two elements. The specific meaning of the above terms in the present application can be understood by those skilled in the art according to the specific circumstances.
In the description of the present specification, the terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., as used herein, mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
Referring to fig. 1-2, a first aspect of the present application provides a device for removing static electricity on a surface of a wafer 80, which includes an electrostatic chuck 30, a circuit module 70, a first power source 91 and a second power source 92; the circuit module 70 is connected to the electrostatic chuck 30, and the electrostatic chuck 30 is used for fixing the wafer 80; the first power supply 91 is controlled to be connected to the circuit module 70, so that the first voltage provided by the first power supply 91 can break down the oxide layer on the surface of the wafer 80 through the circuit module 70; the second power source 92 is controlled to be connected to the circuit module 70, so that the second voltage provided by the second power source 92 can eliminate static electricity on the surface of the wafer 80 through the circuit module 70.
In this solution, the electrostatic chuck 30 is used to fix the wafer 80, the circuit module 70 is connected to the wafer 80 by connecting the electrostatic chuck 30, when the circuit module 70 is connected to the first power supply 91 through switching, the first power supply 91 provides a first voltage to break through an oxide layer on the surface of the wafer 80, so that the circuit module 70 can be conducted with the wafer 80, after the breakdown is completed, the second power supply 92 provides a second voltage to the circuit module 70 through switching the circuit module 70 to connect to the second power supply 92, and at this time, the second power supply 92 and the static electricity on the surface of the wafer 80 are neutralized, thereby achieving static elimination.
Referring to fig. 4, in a further embodiment, the electrostatic chuck 30 includes a chuck body 33, a first pin 31, a second pin 32, and a third power source 93; the first pins 31 are disposed on the chuck body 33 and connected to a third power source 93, and the third power source 93 is configured to supply power to the chuck body 33 through the first pins 31; the second pins 32 are disposed on the chuck body 33, and one ends of the second pins 32 are connected to the circuit module 70, and the other ends are used for contacting the wafer 80.
In this embodiment, the third power source 93 is connected to the chuck body 33 through the first pin 31 to supply power to the chuck body 33, and the second pin 32 is disposed in the chuck body 33 and contacts the wafer 80 with the circuit module 70, so that the wafer 80 can be connected with the circuit module 70, and is impacted by the first voltage of the first power source 91 to break down the oxide layer, or is impacted by the second voltage of the second power source 92 to neutralize the static electricity.
In a further embodiment, the first voltage is higher than the second voltage, the first power source 91 is a high voltage power source, and the second power source 92 is a programmable power source.
In this embodiment, the first power source 91 is a high voltage power source so as to break down the oxide layer, and the second power source 92 is a programmable power source, so that the static electricity on the surface of the wafer 80 can be quantitatively eliminated.
Referring to fig. 3, in a further embodiment, the apparatus for eliminating static electricity on a surface of a wafer 80 further includes a probe 50, and the probe 50 is used for detecting a static voltage on the surface of the wafer 80.
In this scheme, the probe 50 can detect the voltage on the surface of the wafer 80 in real time, and the voltage detected by the probe 50 can be matched with the programmable power supply to quantitatively eliminate the voltage on the surface of the wafer 80, and meanwhile, the probe can neutralize the static electricity on the surface of the wafer 80 at the second voltage and then continue to detect to confirm whether the static electricity is completely eliminated.
In a further embodiment, the circuit module 70 includes a first resistor 71, a second resistor 73 and a voltmeter 72, the first resistors 71 connected in series are connected in parallel to the wafer 80 turned on by the second pin 32, the voltmeter 72 is connected in parallel to the first resistors 71 connected in series, and the first power source 91 or the second power source 92 is connected in series with the second resistor 73 and then is controlled to be connected to the circuit module 70.
In this scheme, a plurality of first resistors 71 connected in series are connected in parallel to the wafer 80, and meanwhile, the voltmeter 72 is connected in parallel to the wafer 80, when the first power supply 91 applies the first voltage to break down the oxide layer to the wafer 80, the voltmeter 72 is connected in parallel to the first resistor 71 and the wafer 80, when the oxide layer breaks down, the detected value of the voltmeter 72 changes, at this time, the connection between the first power supply 91 and the circuit module 70 can be cut off, so that the wafer 80 is prevented from being damaged due to the fact that the first voltage is continuously applied to the wafer 80, and meanwhile, static electricity on the surface of the wafer 80 can be prevented from being affected by the first voltage.
In a specific embodiment, referring to fig. 1, a power supply 90 (including a first power supply 91 or a second power supply 92) is connected in series with a second resistor 73 and then connected to the voltmeter 72, two serially connected first resistors 71 are connected in parallel to the voltmeter 72, the middle parts of the two serially connected first resistors 71 are grounded, and the wafer 80 is connected in parallel to the voltmeter 72 through two second pins 32.
In a further embodiment, the wafer 80 surface static electricity eliminating apparatus further includes an optical camera 40 and a motion base 20, wherein the optical camera 40 is used for determining the current position of the wafer 80; the motion base 20 mounts the electrostatic chuck 30 and is used to adjust the position of the wafer 80 on the electrostatic chuck 30 to optically position the wafer 80.
In this scheme, the current position of the wafer 80 can be monitored in real time by the optical camera 40, the electrostatic chuck 30 with the wafer 80 is fixed on the moving base 20, and when the optical camera 40 determines that the position of the wafer 80 needs to be adjusted, the center of the wafer 80 can be driven to be located on the electron beam by controlling the moving base 20 to move.
In a further embodiment, the apparatus for eliminating static electricity on the surface of the wafer 80 further includes a control module, which is communicatively connected to the voltmeter 72, and is configured to control the first power source 91 to be connected to or disconnected from the circuit module 70 and control the second power source 92 to be connected to or disconnected from the circuit module 70.
In this scheme, when the first power supply 91 applies the first voltage to break down the oxide layer to the wafer 80, when the oxide layer breaks down, the data of the voltmeter 72 will change, at this time, the voltmeter 72 will send the information that the oxide layer has broken down to the control module, and the control module disconnects the first power supply 91 from the circuit module 70 according to the information, so that the wafer 80 can be prevented from being damaged by the high voltage of the first voltage, the service life of the wafer 80 is affected, and meanwhile, the second power supply 92 and the circuit module 70 can be conducted, so that static electricity of the wafer 80 is eliminated.
In a further embodiment, the static electricity eliminating device on the surface of the wafer 80 is disposed in the chamber 10, the electron gun 60 for emitting electron beams is further disposed in the chamber 10, and the optical module and the motion base 20 are matched with each other to move the wafer 80 mounted on the electrostatic chuck 30 onto the electron beams.
Referring to fig. 5, a second aspect of the present application provides a method for eliminating static electricity on a surface of a wafer 80, which is implemented based on the apparatus for eliminating static electricity on a surface of a wafer 80 provided in the first aspect of the present application, and the method includes the following steps:
s100: in the process of controlling the electrostatic chuck 30 to drive the wafer 80 to move so as to perform optical positioning calibration on the wafer 80, the probe 50 is controlled to detect the measurement voltage on the surface of the wafer 80;
s200: determining the distance between each measuring point and the center of the wafer 80 based on the positions of the probe 50 and the electron beam and the motion path of the electrostatic chuck 30;
s300: based on the measured voltage at each measurement point and the distance between each measurement point and the center of the wafer 80, a relationship curve V-r between the measured voltage at the measurement point and the distance between the measurement point and the center of the wafer 80 is fitted.
S400: controlling the first power source 91 to be connected with the circuit module 70 so that the first voltage provided by the first power source 91 electrically impacts the oxide layer of the wafer 80;
s500: the second power source 92 is controlled to be connected to the circuit module 70, so that the second voltage provided by the second power source 92 eliminates static electricity on the surface of the wafer 80.
Controlling the second power supply 92 to be connected with the circuit module 70;
based on the circuit module 70, determining whether the first voltage is shocked across the oxide layer of the wafer 80;
under the condition that the first voltage is electrically shocked to penetrate through the oxide layer of the wafer 80, the electrostatic voltage of the center point of the wafer 80 is obtained through the relation curve;
the second power supply 92 is controlled to apply a reverse voltage having the same magnitude and opposite charges to the electrostatic voltage at the center point of the wafer 80 to the wafer 80 so as to eliminate the surface static electricity of the wafer 80.
In this scheme, the circuit module 70 determines whether the first voltage breaks down the oxide layer according to the change of the data of the voltmeter 72, after the oxide layer breaks down, the circuit module 70 switches to the second power supply 92, and obtains the electrostatic voltage at the center point of the wafer 80 through the relation curve V-r, at this time, the second power supply 92 is controlled, and the second power supply 92 is made to apply the voltage in the direction of the electrostatic voltage to the wafer 80 through the circuit module 70 so as to neutralize the static electricity on the surface of the wafer 80, thereby realizing the effect of quantitatively eliminating the static electricity on the surface of the wafer 80.
Further, the method for eliminating static electricity on the surface of the wafer 80 further includes a step of controlling the connection time of the second power source 92 and the circuit module 70 by the control module, specifically, the second power source 92 is disconnected by the control module after the second voltage is applied to the wafer 80 for 0.5s, so as to avoid that the voltage on the surface of the wafer 80 will become the value of the second voltage due to the continuous application of the second voltage.
In this scheme, the probe 50 measures the measurement voltage of the wafer 80 in the process of driving the wafer 80 by the electrostatic chuck 30 to perform optical positioning calibration on the wafer 80, so that the voltage measurement is more accurate, and since the wafer 80 is in the process of performing optical positioning calibration, the position of the measurement point after positioning can be deduced by the position of the probe 50 (i.e. the position of the measurement point before positioning) and the movement path of the electrostatic chuck 30, the position of the electron beam is the position of the center of the wafer 80 after positioning, the relationship curve V-r can be formed by the data, and the real-time electrostatic voltage on the surface of the wafer 80 can be obtained by the relationship curve V-r and the data obtained by the probe 50.
While embodiments of the present application have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the application, and that variations, modifications, alternatives, and variations may be made to the above embodiments by those skilled in the art within the scope of the application.

Claims (10)

1. The wafer surface static electricity eliminating device is characterized by comprising an electrostatic chuck (30), a circuit module (70), a first power supply (91) and a second power supply (92);
the circuit module (70) is connected to the electrostatic chuck (30), and the electrostatic chuck (30) is used for fixing a wafer (80);
the first power supply (91) is controlled to be connected to the circuit module (70) so that a first voltage provided by the first power supply (91) can break through an oxide layer on the surface of the wafer (80) through the circuit module (70);
the second power supply (92) is controlled to be connected to the circuit module (70) so that the second voltage provided by the second power supply (92) can eliminate static electricity on the surface of the wafer (80) through the circuit module (70).
2. The wafer surface static elimination apparatus according to claim 1, wherein,
the electrostatic chuck (30) comprises a chuck body (33), a first pin (31), a second pin (32) and a third power supply (93);
the first pins (31) are arranged on the chuck body (33) and are connected to a third power supply (93), and the third power supply (93) is used for supplying power to the chuck body (33) through the first pins (31);
the second pin (32) is arranged on the chuck body (33), and one end of the second pin (32) is connected to the circuit module (70) while the other end is used for contacting the wafer (80).
3. The wafer surface static elimination apparatus according to claim 1, wherein said first voltage is higher than said second voltage, said first power supply (91) is a high voltage power supply, and said second power supply (92) is a programmable power supply.
4. The wafer surface static elimination apparatus according to claim 1, further comprising a probe (50), said probe (50) for detecting a static voltage of a surface of a wafer (80).
5. The wafer surface static elimination apparatus according to claim 2, wherein,
the circuit module (70) comprises a first resistor (71), a second resistor (73) and a voltmeter (72), wherein a plurality of first resistors (71) connected in series are connected in parallel with a wafer (80) conducted by the second pin (32), the voltmeter (72) is connected in parallel with the plurality of first resistors (71) connected in series, and the first power supply (91) or the second power supply (92) is connected in series with the second resistor (73) and then is controlled to be connected into the circuit module (70).
6. The wafer surface static elimination apparatus according to claim 1, wherein,
the wafer surface static electricity eliminating device further comprises an optical camera (40) and a motion base (20), wherein the optical camera (40) is used for determining the current position of the wafer (80);
the motion base (20) mounts the electrostatic chuck (30) and is used to adjust the position of the wafer (80) on the electrostatic chuck (30) to optically position the wafer (80).
7. The wafer surface static elimination apparatus according to any of claims 1 to 6, wherein said wafer (80) surface static elimination apparatus further comprises a control module, said control module being communicatively connected to said voltmeter (72), said control module being configured to control said first power source (91) to be turned on or off from said circuit module (70) and said second power source (92) to be turned on or off from said circuit module (70).
8. A wafer surface static elimination method characterized in that it is realized based on the wafer (80) surface static elimination apparatus according to any one of claims 1 to 7, said method comprising the steps of:
controlling the first power supply (91) to be connected with the circuit module (70) so that a first voltage provided by the first power supply (91) electrically impacts an oxide layer of the wafer (80);
and controlling the second power supply (92) to be connected with the circuit module (70) so as to enable the second voltage provided by the second power supply (92) to eliminate the static electricity on the surface of the wafer (80).
9. The wafer surface static elimination method according to claim 8, characterized in that before controlling said second power supply (92) to be turned on with said circuit module (70) so that a second voltage provided by said second power supply (92) eliminates static electricity on the surface of said wafer (80), said method further comprises:
in the process of controlling the electrostatic chuck (30) to drive the wafer (80) to move so as to perform optical positioning calibration on the wafer (80), controlling the probe (50) to detect the measurement voltage on the surface of the wafer (80);
determining a distance between each measuring point and the center of the wafer (80) based on the positions of the probe (50) and the electron beam and the motion path of the electrostatic chuck (30);
and fitting a relation curve between the measured voltage of the measuring point and the distance of the measuring point from the center of the wafer (80) based on the measured voltage of each measuring point and the distance of each measuring point from the center of the wafer (80).
10. The wafer surface static elimination method according to claim 9, wherein said controlling said second power supply (92) to be turned on with said circuit module (70) so that a second voltage provided by said second power supply (92) eliminates static electricity on said wafer (80) surface comprises:
-controlling the second power supply (92) to be connected to the circuit module (70);
under the condition that the first voltage is electrically shocked to penetrate through an oxide layer of the wafer (80), obtaining the electrostatic voltage of the center point of the wafer (80) through the relation curve;
and controlling the second power supply (92) to apply a reverse voltage which is the same as the electrostatic voltage at the center point of the wafer (80) and opposite in charge to the wafer (80) so as to eliminate the surface static electricity of the wafer (80).
CN202311048479.1A 2023-08-18 2023-08-18 Wafer surface static eliminating device and method thereof Pending CN117098298A (en)

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Application Number Priority Date Filing Date Title
CN202311048479.1A CN117098298A (en) 2023-08-18 2023-08-18 Wafer surface static eliminating device and method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202311048479.1A CN117098298A (en) 2023-08-18 2023-08-18 Wafer surface static eliminating device and method thereof

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CN117098298A true CN117098298A (en) 2023-11-21

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