CN117097361B - Device integrating multi-band antenna and radio frequency switch and preparation method thereof - Google Patents
Device integrating multi-band antenna and radio frequency switch and preparation method thereof Download PDFInfo
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Abstract
The invention relates to the technical field of radio frequency, in particular to a device integrating a multi-band antenna and a radio frequency switch. The device comprises a substrate, a substrate integrated waveguide formed by arranging through holes on the substrate, an upper electrode of the substrate integrated waveguide deposited on the front surface of the substrate, a slot antenna and a patch antenna which are manufactured on the back surface of the substrate, and at least two phase-change radio frequency switches which are manufactured on the front surface of the substrate; the slot antenna is arranged around the patch antenna in a surrounding manner, the centers of the slot antenna and the patch antenna are coincident, gaps for adjusting frequency resonance points are formed in the edges of the slot antenna and the patch antenna, and orthographic projections of the slot antenna and the patch antenna on the substrate are positioned in the substrate integrated waveguide; the slot antenna is fed through the substrate integrated waveguide, and the phase-change radio frequency switch is electrically connected with the upper electrode through a metal bridge. The device not only can realize the work of multiple frequency bands, but also has smaller chip area and higher integration level.
Description
Technical Field
The invention relates to the technical field of radio frequency, in particular to a device integrating a multi-band antenna and a radio frequency switch and a preparation method thereof.
Background
The front-end module for communication or radar mainly comprises an antenna, a switch and other devices. As the frequency bands of applications gradually evolve towards millimeter waves and even terahertz, higher demands are being placed on reconfigurable modules or systems. For example, in radar applications, antennas are often required to have multi-frequency operation capabilities in order to avoid exposing targets and to improve interference immunity. In the same communication system, in order to avoid interference of each frequency band and improve the transceiving capability of the system, it is also necessary to have a plurality of working frequency bands in one system. Therefore, how to concentrate multiple pairs of antennas with similar radiation characteristics, which operate in different frequency bands, into the same antenna aperture through a reconstruction method is a main direction of research and design of frequency reconfigurable antennas.
In the reconfigurable system, higher demands are put forward on the rf switch, including low insertion loss in the "on state", high isolation in the "off state", fast switching speed, high integration, high power capacity, and the like. The prior mature radio frequency switching technology mainly comprises a field effect transistor, a pin diode, a micro-electromechanical system and the like. However, these switches have problems such as high manufacturing cost, difficulty in integration with CMOS processes, low reliability, high activation voltage, low power capacity, and high power consumption. The phase change material microwave switch (PCMS) has obvious advantages, has excellent characteristics of high off/on ratio, high speed, small size, low parasitic capacitance and the like, and is very suitable for preparing a low-loss, integrated and miniaturized radio frequency switch. It becomes important how to miniaturize the phase-change rf switch and the multiband antenna.
Disclosure of Invention
Based on the above, the invention provides a novel device integrating the multi-band antenna and the radio frequency switch, which not only can realize multi-band operation, but also has smaller chip area and higher integration level.
The invention realizes the technical purposes through the following technical proposal: the invention provides a device integrating a multi-band antenna and a radio frequency switch, which is characterized by comprising a substrate, a substrate integrated waveguide formed by arranging through holes on the substrate, an upper electrode of the substrate integrated waveguide deposited on the front surface of the substrate, a slot antenna and a patch antenna which are manufactured on the back surface of the substrate, and at least two phase-change radio frequency switches which are manufactured on the front surface of the substrate, wherein the substrate integrated waveguide is arranged on the front surface of the substrate;
The slot antenna is arranged around the patch antenna in a surrounding manner, the centers of the slot antenna and the patch antenna are coincident, gaps for adjusting frequency resonance points are formed in the edges of the slot antenna and the patch antenna, and orthographic projections of the slot antenna and the patch antenna on the substrate are positioned in the substrate integrated waveguide;
the slot antenna realizes feed through the substrate integrated waveguide, and the phase-change radio frequency switch is electrically connected with the upper electrode through a metal bridge.
As a preferred implementation mode, the through holes of the substrate integrated waveguide are arranged in an array mode in a semi-surrounding or full-surrounding mode.
As a preferred embodiment, the array in the full-surrounding form is arranged in a rectangular shape or a square shape or a round shape, and the array in the half-surrounding form is arranged in an arc shape or a '冂' shape.
As a preferred embodiment, the device comprises a plurality of repeating units formed by the substrate integrated waveguide, the upper electrode, the slot antenna, the patch antenna and the two phase-change radio frequency switches.
As a preferred implementation mode, the substrate integrated waveguide comprises two rows of through holes which are arranged in rows and one section of through holes which are arranged in an arc-shaped array, all the through holes are in a '冂' shape, and the orthographic projection of the slot antenna and the patch antenna on the substrate is positioned in the substrate integrated waveguide, and the centers of the slot antenna and the patch antenna are coincident with the center of the arc-shaped structure.
As a preferred embodiment, the notch of the slot antenna is located at the outer edge of the slot antenna, and the notch of the patch antenna is located at the outer edge of the patch antenna.
As a preferred embodiment, the slot antenna and the patch antenna are prepared in the same photolithography and lift-off process.
As a preferred embodiment, the slot antenna, the patch antenna and the notch are circular, square or triangular.
The invention also provides a preparation method of the device integrating the multi-band antenna and the radio frequency switch, which comprises the following steps:
s1, depositing an isolation layer on the front surface of a substrate, manufacturing a phase-change radio frequency switch and an upper electrode of a substrate integrated waveguide, and connecting the phase-change radio frequency switch with the upper electrode through a metal bridge;
S2, etching a through hole on the substrate and depositing metal to manufacture a substrate integrated waveguide;
and S3, depositing a metal layer on the back of the substrate by adopting a photoetching process and a stripping process, and stripping to remove the metal layer at the slot antenna to finish the manufacture of the slot antenna and the patch antenna, wherein the mask pattern on the mask plate on the back of the substrate is the structure pattern of the slot antenna.
Wherein, the step S1 is realized by the following steps:
S1-1, depositing an isolation layer on a substrate and manufacturing a thin film resistor;
s1-2, depositing a metal layer A on a substrate, wherein the metal layer A is used as a heating electrode of a phase-change radio frequency switch and an upper electrode of a substrate integrated waveguide;
s1-3, sequentially depositing a barrier layer and a phase change material layer on the thin film resistor;
S1-4, depositing a metal layer B to finish the manufacture of the phase-change radio frequency switch and simultaneously realizing the connection with an upper electrode;
s1-5, a substrate protective layer is further arranged on the front surface of the substrate.
As a preferred embodiment, the method further comprises the step of thinning the back surface of the substrate to a preset thickness, and the step is positioned after the preparation of the phase-change radio frequency switch is completed.
The device integrating the multi-band antenna and the radio frequency switch provided by the invention has the advantages that the radio frequency switch and the dual-band antenna are manufactured on the same substrate, the radio frequency switch adopts the phase-change radio frequency switch, the antenna adopts the integrated waveguide design, and the slot antenna and the patch antenna are simultaneously manufactured in the integrated waveguide, so that the dual-band operation is realized, and the device has at least the following advantages:
(1) The connection loss is small: the radio frequency switch and the dual-band antenna are prepared on the same substrate, the connection mode directly adopts on-chip interconnection, the connection distance is shorter, and the connection loss is smaller;
(2) High integration level and small chip area: the radio frequency switch and the antenna are prepared on the same substrate, and compared with the traditional discrete devices, the chip integrated with the two devices has smaller area and higher integration level;
(3) Multi-band operation, frequency reconfigurability: on the same substrate, a slot antenna and a patch antenna of a substrate integrated waveguide are prepared, each antenna is provided with a switch, the two antennas are not interfered with each other, and can work in different frequency bands at the same time, so that the frequency is reconfigurable.
Drawings
Fig. 1 is a schematic longitudinal section structure of a device provided by the invention and integrating a multiband antenna and a radio frequency switch;
fig. 2 is a schematic longitudinal section view of a device provided by the invention, after an isolation layer is deposited in step 1 in the process of manufacturing the device integrated with a multiband antenna and a radio frequency switch;
Fig. 3 is a schematic longitudinal section view of a fabricated thin film resistor in step 2 in the process of fabricating a device with an integrated multiband antenna and a rf switch according to the present invention;
Fig. 4 is a schematic diagram of a manufactured metal layer a in step 3 in a manufacturing process of a device with an integrated multiband antenna and a rf switch according to the present invention;
Fig. 5 is a schematic longitudinal section view of a fabricated barrier layer in step 4 in the process of fabricating a device with an integrated multiband antenna and a rf switch according to the present invention;
Fig. 6 is a schematic longitudinal section view of a device provided by the invention, in which the phase change material layer is manufactured in step 5 in the process of manufacturing the device;
Fig. 7 is a schematic longitudinal section view of a fabricated metal layer B in step 6 in the process of fabricating a device with an integrated multiband antenna and a rf switch according to the present invention;
Fig. 8 is a schematic longitudinal section view of the device provided by the invention, after finishing the manufacture of the protective layers and thinning treatment in the steps 7 and 8 in the process of manufacturing the device integrating the multiband antenna and the radio frequency switch;
Fig. 9 is a schematic diagram of a device with integrated multi-band antenna and rf switch after the dual-band antenna through hole in step 9 SIW is completed in the process of manufacturing the device.
In the figure:
1. the antenna comprises a substrate, a 2-substrate integrated waveguide, a 3-slot antenna, a 4-patch antenna, a 5-upper electrode, a 6-phase change radio frequency switch and a 7-metal layer, wherein the substrate is provided with a first cavity;
61. film resistor, 62 metal layer a, 63 barrier layer, 64 phase change material layer, 65 radio frequency electrode.
Detailed Description
In the existing reconfigurable system, each working frequency needs to be provided with an independent link system, and each link needs to be provided with an independent antenna and a switch, so that the whole reconfigurable system is very complex, the design difficulty is also increased, the chip area is large, the connection loss in each functional device is also very large, and the defects are more remarkable in millimeter wave or even terahertz wave bands.
Based on the problems existing in the prior art, the invention provides two devices of the radio frequency switch and the antenna which are simultaneously prepared on the same substrate, the monolithic integration of the two devices is realized, meanwhile, the devices are directly interconnected in a chip, and the connection loss is smaller. Specifically, the radio frequency switch adopts a phase-change radio frequency switch, the antenna adopts a substrate integrated waveguide design, a slot antenna and a patch antenna are simultaneously prepared in the substrate integrated waveguide, the dual-band operation of the antenna is realized, the antenna is mutually connected with two switches, the receiving and transmitting functions of a plurality of frequency bands can be simultaneously realized, the working frequency is expanded, the purpose of frequency reevaluation is achieved, the antenna is integrated in the same substrate and process, the chip area is greatly reduced, and the integration level of the system is improved.
In order to make the technical scheme of the present application more clear, the present application is further described in detail below with reference to the accompanying drawings. It should be understood that these examples are provided so that this disclosure will be thorough and complete, and are not intended to limit the application. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
The invention provides a device integrating a multi-band antenna and a radio frequency switch, which is shown in figure 1, and comprises a substrate 1, a substrate integrated waveguide 2 formed by arranging through holes on the substrate 1, an upper electrode 5 of the substrate integrated waveguide deposited on the front surface of the substrate, a slot antenna 3 and a patch antenna 4 which are manufactured on the back surface of the substrate, and at least two phase-change radio frequency switches 6 which are manufactured on the front surface of the substrate;
The slot antenna 3 is arranged around the patch antenna 4 in a surrounding manner, the centers of the slot antenna 3 and the patch antenna 4 are coincident, gaps for adjusting frequency resonance points are formed in the edges of the slot antenna 3 and the patch antenna 4, and orthographic projections of the slot antenna 3 and the patch antenna 4 on the substrate 1 are positioned in the substrate integrated waveguide 2;
The slot antenna 3 is fed through the substrate integrated waveguide 2, and the phase-change radio frequency switch 6 is electrically connected with the upper electrode 5 through a metal bridge.
The device integrating the multi-band antenna and the radio frequency switch is prepared on the same substrate, the connection mode is directly in-chip interconnection, the connection distance is shorter, the loss is smaller, the slot antenna and the patch antenna are provided with one switch, each antenna is not disturbed, the device can work in different frequency bands at the same time, the frequency is reconfigurable, and the device has smaller chip area and higher integration level while realizing the dual-band.
In addition, it is understood that the claimed device of the present application may include a plurality of the above-mentioned unit combinations (i.e., the repeating units formed by the two phase-change rf switches, the substrate integrated waveguide, the slot antenna, the patch antenna, and the upper electrode), and any array configuration and circuit architecture expanded by the above-mentioned unit combinations are included in the scope of the claimed device of the present application.
In the device, gaps on the slot antenna and the patch antenna for adjusting frequency resonance points are round, square or triangular. The positions and the number of the gaps can be adjusted according to the situation, for example, the gaps can be all arranged on the inner edge of the slot antenna (namely, on the outer edge of the patch antenna) to realize the adjustment of the frequency resonance point, and the gaps can also be simultaneously arranged on the slot antenna and the patch antenna.
Preferably, the notch of the slot antenna is located at the outer edge of the slot antenna, and the notch of the patch antenna is located at the outer edge of the patch antenna, which can be symmetrically arranged two each, and four are arranged in a ring array, see fig. 1 specifically.
It will be appreciated that the slot antenna 3 and patch antenna are also circular or square or triangular in configuration.
Further, in the present application, the through holes of the substrate integrated waveguide 2 are arranged in an array in a semi-surrounding or full-surrounding form, and the orthographic projections of the slot antenna 3 and the patch antenna 4 on the substrate 1 are located inside the substrate integrated waveguide 2, preferably, the center of the orthographic projection coincides with the center of the substrate integrated waveguide 2.
It can be understood that the array in the full-surrounding form is arranged in a rectangular shape or a square shape or a round shape, and the array in the half-surrounding form is arranged in an arc shape or a 冂 shape.
For example, as shown in fig. 1, the substrate integrated waveguide 2 includes two rows of through holes arranged in rows and a section of through holes arranged in an arc array, and all the through holes are finally in a shape of 冂', that is, the two rows of through holes arranged in rows are located at two sides of the through holes arranged in the arc array, and the orthographic projections of the slot antenna 3 and the patch antenna 4 on the substrate 1 are located inside the substrate integrated waveguide and the centers of the slot antenna and the patch antenna are coincident with the center of the arc structure.
Further, in the present application, the slot antenna 3 and the patch antenna 4 are prepared in the same photolithography process.
The preparation of the device integrating the multiband antenna and the radio frequency switch provided by the application comprises the following steps:
s1, depositing an isolation layer on the front surface of a substrate 1, manufacturing a phase-change radio frequency switch 6 and an upper electrode 5 of a substrate integrated waveguide 2, and connecting the phase-change radio frequency switch 6 with the upper electrode through a metal bridge;
s2, etching a through hole on the substrate 1 and depositing metal to manufacture a substrate integrated waveguide;
And S3, adopting a photoetching process and a stripping process on the back surface of the substrate, depositing a metal layer, and stripping and removing the metal layer at the slot antenna to finish the manufacture of the slot antenna and the patch antenna.
Further, step S1 is implemented by the following steps:
s1-1, depositing an isolation layer on a substrate and manufacturing a thin film resistor 61;
s1-2, depositing a metal layer A on a substrate, wherein the metal layer A is used as a heating electrode 62 of a phase-change radio frequency switch and an upper electrode 5 of a substrate integrated waveguide;
s1-3, sequentially depositing a barrier layer 63 and a phase change material layer 64 on the thin film resistor;
s1-4, depositing a metal layer B to finish the manufacture of the phase-change radio frequency switch and simultaneously realizing the connection with an upper electrode 5;
s1-5, a substrate protective layer is further arranged on the front surface of the substrate.
Further, the method further comprises the step of thinning the back surface of the substrate to a preset thickness, and the step is positioned after the preparation of the phase-change radio frequency switch is completed.
The structure of the present application will be described in further detail in the following by way of one specific example:
Step 1: manufacturing an isolation layer: in order to prevent the substrate 1 (the substrate material is high-resistance Si or gallium nitride or indium phosphide or gallium arsenide or SiC or Ga 2O3) from influencing the performance of the phase-change radio frequency switching device, a layer of insulating material is required to be manufactured on the substrate, the thickness is between 10 and 50nm, the insulating material is used for realizing the isolation between the phase-change radio frequency switching device and the substrate 1, and the deposited structure is shown in figure 2. The deposited dielectric material is silicon nitride silicon oxide or aluminum oxide, so that a better isolation effect between the device and the substrate is ensured, and the influence on the performance of the device due to electric leakage and heat conduction of the substrate during operation is avoided.
Step2: manufacturing a film resistor 61: the Thin Film Resistor (TFR) adopts sputtering and stripping processes to realize the alloy pattern, and meanwhile, the thin film resistor material is used as one side electrode of the phase-change radio frequency switching device. The sheet resistance of the sheet resistor may be selected to be 50Ω. Before manufacturing the thin film resistor, in order to ensure that the device area is clean, oxygen plasma is firstly adopted to carry out surface treatment for 5min, then hydrochloric acid is adopted to clean and remove surface oxides, hydrochloric acid is adopted to clean for 1min (V HCl:VH2O = 1:10), 50nm of thin film resistor material is sputtered, a stripping process is adopted to keep the thin film resistor material of the device area after sputtering is completed, wet solution acetone, stripping liquid, isopropanol and ultrapure water are adopted to carry out sequential cleaning in the stripping process, and a structure after TFR manufacturing is shown in figure 3.
Step 3: manufacturing a metal layer A: the metal layer A is used as the heating electrode 62 of the phase-change radio frequency switch and the upper electrode of the SIW device, the metal layer A is made of Ti/Au laminated metal, the thickness of the metal is about 1 μm, and the manufactured structure is shown in figure 4. The metal layer A is realized through photoetching, metal deposition and stripping processes, and the stripping processes adopt wet solution, stripping liquid, isopropanol and ultrapure water for cleaning in sequence.
Step 4: manufacturing a barrier layer 63: after the thin film resistor 61 is manufactured, a barrier layer (barrier layer) is manufactured to isolate the thin film resistor from the phase change material manufactured later. The barrier layer 63 has a large influence on the performance of the device, and needs a material with small heat conduction, good insulativity and low dielectric constant, the deposited material is silicon nitride or aluminum nitride, the deposited thickness is 100-200 nm, and the structure of the barrier layer 63 after the manufacture is shown in fig. 5.
Step 5: manufacturing a phase change material layer 64: and (3) adopting a photoetching machine to manufacture a photoetching pattern, then adopting a sputtering and stripping process to manufacture a phase-change material with the thickness of 50-200 nm, wherein the phase-change material is GeTe or GexSb-xTe and the like, and the manufactured structure is shown in figure 6.
Step 6: manufacturing a metal layer B: the metal layer B is used for the rf electrode 65 of the phase change rf switch and the air bridge trace of the connection device. The metal layer B is made of Ti/Au laminated metal, the thickness of the metal is 1-3 mu m, the metal layer B is realized through photoetching, metal deposition and stripping processes, and the structure after the manufacturing is shown in figure 7.
Step 7: manufacturing a protective layer: and depositing the SiN front protection layer by PECVD, wherein the thickness is about 100-200 nm. The purpose of this step is to protect the front-side fabricated device from external influences.
Step 8: back thinning: the substrate 1 is thinned to 50-100 mu m from the back by mechanical and chemical polishing, and the step comprises two steps of sticking and thinning. The sticking process is to stick the front surface of the chip together with the carrier chip by using high-temperature paraffin, and the purpose of sticking is to protect the front surface pattern from being damaged in the subsequent back surface process, and on the other hand, the mechanical strength of the thinned substrate is reduced, so that the thinned chip cannot crack in the subsequent back surface process, and the structure after thinning is shown in fig. 8.
Step 9: manufacturing a SIW dual-band antenna through hole: after the phase-change radio frequency switch is manufactured, a metal through hole is manufactured by etching the through hole on the epitaxial substrate and depositing metal, the substrate integrated waveguide SIW transmission structure is manufactured by using the arrayed through holes, and the dual-band antenna is manufactured on the basis of SIW. The back hole etching uses metal Ni as a mask plate of an etching hole, the substrate is etched by using SF 6 in a dry method, the epitaxial layer is etched by using BCl 3 or Cl 2+N2, and finally HNO 3 is used for cleaning and Ni metal mask removal after etching. The diameter d of the SIW holes is 10-50 μm, the hole spacing S is 10-200 μm, the width W between two rows of SIW holes is 5-1 mm, the length of the whole through hole is 500 nm-5 μm, and the structure after SIW manufacture is shown in figure 9.
Step 10: preparation of a SIW dual band antenna: firstly, cleaning and removing surface oxides by using O 2 plasma and hydrochloric acid, then sputtering a seed layer Ti/Au on the back surface of the substrate by adopting a photoetching process and a lift-off process, wherein the thickness of Ti is 20-100 nm, the thickness of Au is 100-500 nm, and finally electroplating gold, and the thickness of gold is 5-10 mu m. The metal at the slot antenna is removed through the process of removing the adhesive, and the metal at the other parts of the back surface is remained, so that the manufacture of the slot antenna 3 and the patch antenna 4 is completed, and the structure after the manufacture is shown in fig. 1. The dual-band antenna adopts SIW integrated waveguide design, adopts a slot antenna and a patch antenna principle to realize the patch antenna and a circular antenna simultaneously, opens a circular slot at the tail end of a resonator and prepares a circular patch to realize the radiation of electromagnetic waves, wherein the radius R2 of the circular slot is 100 nm-5 mu m, the radius R1 of the middle circular patch is 50 nm-3 mu m, wherein the gaps of the circular patch and the circular slot are used for adjusting the resonance point of frequency, and the shape is circular or square or triangle.
It should also be noted that in the description of the present application, the drawings and descriptions of the embodiments are illustrative and not restrictive. Like diagramming marks throughout the embodiments of the specification identify like structures. In addition, the drawings may exaggerate thicknesses of some layers, films, panels, regions, etc. for understanding and ease of description. It will also be understood that when an element such as a layer, film, region or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may be present. In addition, "on …" refers to positioning an element on or under another element, but not essentially on the upper side of the other element according to the direction of gravity.
It should be noted that the above examples are only for further illustrating and describing the technical solution of the present invention, and are not intended to limit the technical solution of the present invention, and the method of the present invention is only a preferred embodiment and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (11)
1. The device is characterized by comprising a substrate, a substrate integrated waveguide formed by arranging through holes on the substrate, an upper electrode of the substrate integrated waveguide deposited on the front surface of the substrate, a slot antenna and a patch antenna which are manufactured on the back surface of the substrate, and at least two phase-change radio frequency switches which are manufactured on the front surface of the substrate;
The slot antenna is arranged around the patch antenna in a surrounding manner, the centers of the slot antenna and the patch antenna are coincident, gaps for adjusting frequency resonance points are formed in the edges of the slot antenna and the patch antenna, and orthographic projections of the slot antenna and the patch antenna on the substrate are positioned in the substrate integrated waveguide;
The slot antenna is fed through the substrate integrated waveguide, and the phase-change radio frequency switch is electrically connected with the upper electrode through a metal bridge.
2. The device of claim 1, wherein the through holes of the substrate integrated waveguide are arranged in an array in a semi-or full-surrounding form, and the center of orthographic projection of the slot antenna and the patch antenna on the substrate coincides with the center of the substrate integrated waveguide.
3. The device of claim 2, wherein the array of full enclosure forms is rectangular or square or circular, and the array of half enclosure forms is arc-shaped or 冂' shaped.
4. The device of claim 1, wherein the device comprises a plurality of repeating units of the substrate integrated waveguide, upper electrode, slot antenna, patch antenna and two phase change rf switches of claim 1.
5. The device of claim 2, wherein the substrate integrated waveguide comprises two rows of through holes arranged in a row and one section of through holes arranged in an arc array, all through holes are in a figure of 冂, and the orthographic projections of the slot antenna and the patch antenna on the substrate are positioned in the substrate integrated waveguide, and the centers of the slot antenna and the patch antenna are coincident with the center of the arc structure.
6. The device of claim 1, wherein the notch of the slot antenna is located at an outer edge of the slot antenna and the notch of the patch antenna is located at an outer edge of the patch antenna.
7. The device for integrating a multi-band antenna and a radio frequency switch according to any one of claims 1 to 6, wherein the slot antenna and the patch antenna are manufactured in the same photolithography and lift-off process.
8. The device of any one of claims 1-6, wherein the slot antenna, patch antenna, and notch are circular, square, or triangular.
9. The method for manufacturing the device for integrating the multi-band antenna and the radio frequency switch as claimed in any one of claims 1 to 8, comprising the steps of:
s1, depositing an isolation layer on the front surface of a substrate, manufacturing a phase-change radio frequency switch and an upper electrode of a substrate integrated waveguide, and connecting the phase-change radio frequency switch with the upper electrode through a metal bridge;
S2, etching a through hole on the substrate and depositing metal to manufacture a substrate integrated waveguide;
And S3, adopting photoetching and stripping processes on the back surface of the substrate, depositing a metal layer, and stripping and removing the metal layer at the slot antenna to finish the manufacture of the slot antenna and the patch antenna, wherein the mask pattern on the mask plate on the back surface of the substrate is the structure pattern of the slot antenna.
10. The method for manufacturing a device for integrating a multiband antenna and a radio frequency switch according to claim 9, wherein the step S1 is implemented by:
S1-1, depositing an isolation layer on a substrate and manufacturing a thin film resistor;
s1-2, depositing a metal layer A on a substrate, wherein the metal layer A is used as a heating electrode of a phase-change radio frequency switch and an upper electrode of a substrate integrated waveguide;
s1-3, sequentially depositing a barrier layer and a phase change material layer on the thin film resistor;
S1-4, depositing a metal layer B to finish the manufacture of the phase-change radio frequency switch and simultaneously realizing the connection with an upper electrode;
s1-5, a substrate protective layer is further arranged on the front surface of the substrate.
11. The method of claim 9 or 10, further comprising the step of thinning the back surface of the substrate to a predetermined thickness, and the step is after the completion of the fabrication of the phase-change rf switch.
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| WO2009057988A2 (en) * | 2007-10-31 | 2009-05-07 | Mimos Berhad | Radio frequency mems switch |
| CN112467344A (en) * | 2020-09-30 | 2021-03-09 | 北京航空航天大学 | Frequency reconfigurable antenna based on substrate integrated waveguide and preparation method |
| US11145983B1 (en) * | 2020-06-23 | 2021-10-12 | National Chiao Tung University | Substrate-integrated-waveguide-fed cavity-backed dual-polarized patch antenna |
| CN114614246A (en) * | 2022-02-15 | 2022-06-10 | 深圳市汇芯通信技术有限公司 | Wave beam reconfigurable antenna and electronic equipment |
| CN115763446A (en) * | 2023-02-10 | 2023-03-07 | 湖北九峰山实验室 | Radio frequency integrated device, preparation method thereof and transceiver chip comprising radio frequency integrated device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US10879616B2 (en) * | 2018-08-30 | 2020-12-29 | University Of Electronic Science And Technology Of China | Shared-aperture antenna |
| US11611148B2 (en) * | 2020-12-24 | 2023-03-21 | City University Of Hong Kong | Open-aperture waveguide fed slot antenna |
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| WO2009057988A2 (en) * | 2007-10-31 | 2009-05-07 | Mimos Berhad | Radio frequency mems switch |
| US11145983B1 (en) * | 2020-06-23 | 2021-10-12 | National Chiao Tung University | Substrate-integrated-waveguide-fed cavity-backed dual-polarized patch antenna |
| CN112467344A (en) * | 2020-09-30 | 2021-03-09 | 北京航空航天大学 | Frequency reconfigurable antenna based on substrate integrated waveguide and preparation method |
| CN114614246A (en) * | 2022-02-15 | 2022-06-10 | 深圳市汇芯通信技术有限公司 | Wave beam reconfigurable antenna and electronic equipment |
| CN115763446A (en) * | 2023-02-10 | 2023-03-07 | 湖北九峰山实验室 | Radio frequency integrated device, preparation method thereof and transceiver chip comprising radio frequency integrated device |
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