CN117096730A - Semiconductor laser manufacturing method and semiconductor laser - Google Patents
Semiconductor laser manufacturing method and semiconductor laser Download PDFInfo
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- CN117096730A CN117096730A CN202210520911.1A CN202210520911A CN117096730A CN 117096730 A CN117096730 A CN 117096730A CN 202210520911 A CN202210520911 A CN 202210520911A CN 117096730 A CN117096730 A CN 117096730A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 152
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000005530 etching Methods 0.000 claims abstract description 66
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- 238000002513 implantation Methods 0.000 claims description 5
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- 230000017525 heat dissipation Effects 0.000 abstract description 8
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- 238000013461 design Methods 0.000 description 12
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- 238000010586 diagram Methods 0.000 description 6
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Abstract
The application relates to the technical field of semiconductors, and provides a semiconductor laser manufacturing method and a semiconductor laser, wherein the semiconductor laser manufacturing method comprises the following steps: forming an active region on a semiconductor substrate; dividing an etching area and a non-etching area above the active area, and etching the active area of the etching area to form a multimode interference coupler; depositing a contact layer on the multimode interference coupler and on the active region of the etched region; electrode layers are formed on the semiconductor substrate and the contact layer, respectively. The semiconductor laser is manufactured by the manufacturing method of the semiconductor laser. The application adopts the multimode interference coupler as the active area, greatly increases the area of the active area, has the function of a high-order mode filter, has larger saturated output power compared with the traditional laser structure, can realize stable single-mode output, and improves the heat dissipation characteristic of the semiconductor laser.
Description
Technical Field
The application belongs to the technical field of semiconductors, and particularly relates to a semiconductor laser manufacturing method and a semiconductor laser.
Background
High-power semiconductor lasers have very important applications in optical sensing instruments. In frequency modulated continuous wave light detection and ranging, a continuously chirped laser signal is used, and the distance from the transmitter to the object can be obtained by receiving the reflected signal and comparing it with the original signal. The application range of lidar employing the frequency modulated continuous wave principle ranges from automatic driving automobiles, which is a trend of future automobiles, to meteorological and biomedical imaging, where unmanned has been written into national strategic plans by multiple countries. Lidar is widely studied as a key technology in unmanned driving. Laser phased array radars require high power characteristics of the laser source to accommodate complex weather conditions. Therefore, the high-power semiconductor laser is used as an important component in the laser radar, and has important research value and application prospect.
The waveguides of semiconductor lasers are typically designed as transverse single-mode waveguides for communication purposes, which have low power and poor heat dissipation, ultimately resulting in low power and poor heat dissipation properties of the semiconductor laser.
Disclosure of Invention
The embodiment of the application aims to provide a semiconductor laser manufacturing method and a semiconductor laser, which are used for solving the technical problems of low power and poor heat dissipation of the semiconductor laser in the prior art.
In order to achieve the above purpose, the application adopts the following technical scheme: the manufacturing method of the semiconductor laser comprises the following steps:
forming an active region on a semiconductor substrate;
dividing an etching region and a non-etching region above the active region, and etching the active region of the etching region to form a multimode interference coupler;
depositing a contact layer on the multimode interference coupler and on the active region of the etched region;
electrode layers are formed on the semiconductor substrate and the contact layer, respectively.
In one possible design, forming an active region on the semiconductor substrate includes:
sequentially depositing a lower limiting layer, a quantum well layer and an upper limiting layer on the semiconductor substrate;
and in the etching process, the upper limiting layer corresponding to the etching region is completely etched, and at least the quantum well layer corresponding to the etching region is over etched.
In one possible design, in the etching process, the upper confinement layer and the quantum well layer corresponding to the etching region are completely etched, and the lower confinement layer corresponding to the etching region is over-etched.
In one possible design, the epitaxial structure of the active region is a conventional confinement structure or a large optical cavity structure.
In one possible design, the method further comprises the following steps before forming the active region on the semiconductor substrate:
forming a semiconductor buffer layer on the semiconductor substrate;
the method further comprises the following steps after the active region is formed on the semiconductor substrate:
forming a semiconductor protection layer on the active region;
in the etching process, the protective layer corresponding to the etching area is completely etched, and the active area is over etched;
the contact layer is deposited above the semiconductor protection layer and above the semiconductor buffer layer corresponding to the etching region.
In one possible design, the multimode interference coupler includes a multimode interference coupler waveguide and two first-order mode straight waveguides, the two first-order mode straight waveguides are respectively connected to opposite sides of the multimode interference coupler waveguide, and the width of the multimode interference coupler waveguide is greater than the width of the two first-order mode straight waveguides;
wherein two of the multimode interference coupler waveguides are capable of suppressing lasing of a first order mode.
In one possible design, the contact layers on both sides of the multimode interference coupler are proton implanted to form high resistance regions prior to forming the electrode layers.
The manufacturing method of the semiconductor laser provided by the application has the beneficial effects that: according to the manufacturing method of the semiconductor laser, after the active region is etched to form the multimode interference coupler, the width of the multimode interference coupler waveguide of the multimode interference coupler is larger than that of a conventional single-mode waveguide, meanwhile, the multimode interference coupler also has the function of a high-order mode filter, the lasing of a first-order mode can be restrained, and stable fundamental transverse mode output is finally realized, so that the amplification effect is achieved on the luminous power of the semiconductor laser, and the luminous power and the purity of the semiconductor laser are high. In addition, the area of the active region is greatly increased compared with that of the traditional structure, so that the heat dissipation characteristic of the semiconductor laser is improved, the thermal effect of the semiconductor laser is reduced, and the semiconductor laser has lower energy consumption.
In another aspect, the present application also provides a semiconductor laser, including:
a semiconductor substrate;
the active area is formed on the semiconductor substrate, and a multimode interference coupler is formed after the active area is etched;
a contact layer formed on the multimode interference coupler and on the non-etched portion of the active region;
and two electrode layers respectively formed on the semiconductor substrate and the contact layer.
In one possible design, the active region includes a lower confinement layer, a quantum well layer, and an upper confinement layer formed sequentially on the semiconductor substrate;
the multimode interference coupler includes at least the upper confinement layer and the quantum well layer.
In one possible design, the multimode interference coupler includes a lower confinement layer, a quantum well layer, and an upper confinement layer.
In one possible design, the epitaxial structure of the active region is a conventional confinement structure or a large optical cavity structure.
In one possible design, the semiconductor laser further includes a semiconductor buffer layer formed between the semiconductor substrate and the active region, and a semiconductor protection layer formed on the active region; the multimode interference coupler at least comprises the semiconductor protection layer and the active region.
In one possible design, the multimode interference coupler includes a multimode interference coupler waveguide and two first-order mode straight waveguides, the two first-order mode straight waveguides are respectively connected to opposite sides of the multimode interference coupler waveguide, and the width of the multimode interference coupler waveguide is greater than the width of the two first-order mode straight waveguides;
wherein two of the multimode interference coupler waveguides are capable of suppressing lasing of a first order mode.
In one possible design, the contact layer on both sides of the multimode interference coupler has a high resistance region in which protons are injected.
The semiconductor laser provided by the application has the beneficial effects that: according to the semiconductor laser provided by the embodiment of the application, after the active region is etched to form the multimode interference coupler, the multimode interference coupler waveguide of the multimode interference coupler has a larger active region area compared with a conventional single-mode waveguide, and meanwhile, the multimode interference coupler also has the function of a high-order mode filter, so that the lasing of a first-order mode can be inhibited, and finally stable fundamental transverse mode output is realized, so that the amplification effect on the luminous power of a plurality of semiconductor lasers is realized, and the luminous power and the purity of the semiconductor laser are high. In addition, the area of the active region is greatly increased compared with that of the traditional structure, so that the heat dissipation characteristic of the semiconductor laser is improved, the thermal effect of the semiconductor laser is reduced, and the semiconductor laser has lower energy consumption.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic flow chart of a method for manufacturing a semiconductor laser according to an embodiment of the present application;
FIG. 2 is a schematic diagram of a structure of a semiconductor substrate, a semiconductor buffer layer, an active region and a semiconductor protection layer sequentially formed according to an embodiment of the present application;
FIG. 3 is a schematic structural diagram of the semiconductor buffer layer, the active region and the semiconductor protection layer of FIG. 1 after etching;
FIG. 4 is a schematic view of the structure after deposition of the contact layer in FIG. 3;
FIG. 5 is a schematic diagram of a method of proton injection based on FIG. 4;
FIG. 6 is a schematic view of a structure of forming two side electrode layers on the basis of FIG. 4;
FIG. 7 is a schematic top view of a multi-mode interference coupler formed in an active region;
FIG. 8 is a schematic diagram of the structure of the active region in FIG. 2;
FIG. 9 is a schematic diagram of a state of a first order mode after passing through a multimode interference coupler;
fig. 10 is a schematic diagram of the state of the fundamental transverse mode after passing through the multimode interference coupler.
Wherein, each reference sign in the figure:
1. a semiconductor substrate; 2. a semiconductor buffer layer; 3. an active region; 31. a lower confinement layer; 32. a quantum well layer; 33. an upper confinement layer; 4. a semiconductor protective layer; 5. a contact layer; 51. a first contact layer; 52. a second contact layer; 6. a multimode interference coupler; 61. a first-order mode straight waveguide; 62. a multimode interference coupler waveguide; 7. an N-type electrode; 8. a P-type electrode; 9. a high resistance region; 10. etching the mask; 11. and (3) a photoresist mask.
Detailed Description
In order to make the technical problems, technical schemes and beneficial effects to be solved more clear, the application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
It will be understood that when an element is referred to as being "mounted" or "disposed" on another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.
It is to be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are merely for convenience in describing and simplifying the description based on the orientation or positional relationship shown in the drawings, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus are not to be construed as limiting the application.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
Referring to fig. 1 to 7, a method for manufacturing a semiconductor laser according to an embodiment of the application will now be described. The semiconductor laser manufacturing method is used for manufacturing the semiconductor laser.
Specifically, the method for manufacturing the semiconductor laser comprises the following steps:
s10: an active region 3 is formed on a semiconductor substrate 1.
The semiconductor substrate 1 is an N-InP semiconductor substrate, which may be formed by direct precipitation, or may be formed by precipitating InP first and then subsequently doping, and is not particularly limited herein.
In addition, referring to fig. 8, forming the active region 3 on the semiconductor substrate 1 includes the steps of: forming a lower confinement layer 31 on the semiconductor substrate 1; forming a quantum well layer 32 on the lower confinement layer 31; an upper confinement layer 33 is formed on the quantum well layer 32. That is, the active region 3 includes a lower confinement layer 31, a quantum well layer 32, and an upper confinement layer 33.
S30: dividing an etching region and a non-etching region above the active region 3, and etching the active region 3 of the etching region to form a multimode interference coupler 6;
specifically, an etching region and a non-etching region are firstly divided above the active region 3, then an etching mask 10 formed by SiO2 material is deposited on the non-etching region of the active region 3, and the position of the active region 3 corresponding to the etching region is etched by etching liquid or etching ions to form the multimode interference coupler 6.
The multimode interference coupler 6 uses a multimode waveguide self-mapping effect, and is a structure in which a plurality of modes excited in a multimode waveguide interfere with each other constructively. Due to the self-mapping effect, one or more images of the input field will be periodically generated along the propagation direction of the waveguide.
In practical application, after the active region 3 is etched to form the multimode interference coupler 6, the width of the multimode interference coupler waveguide 62 of the multimode interference coupler 6 is larger than that of a conventional single-mode waveguide, so that the multimode interference coupler 6 has the function of a high-order mode filter, can inhibit the lasing of a first-order mode, and finally realizes stable fundamental transverse mode output, thereby having the function of amplifying the luminous power of the semiconductor laser, and further having high luminous power and high purity of the semiconductor laser. In addition, the area of the active region 3 is greatly increased compared with that of the traditional structure, so that the heat dissipation characteristic of the semiconductor laser is improved, the thermal effect of the semiconductor laser is reduced, and the energy consumption is lower.
S50: depositing a contact layer 5 on the multimode interference coupler 6 and on the active region 3 of the etched region;
specifically, the contact layer 5 includes a first contact layer 51 and a second contact layer 52, where the first contact layer 51 is a P-InP layer, and the second contact layer 52 is a p+ -InGaAs layer, that is, an InP layer doped with a P-type material is deposited on the etched regions of the multimode interference coupler 6 and the active region 3, and then an InGaAs layer doped with a p+ -type material is deposited on the P-InP layer. Wherein the thickness of the P-InP layer is larger and the P+ -InGaAs layer is coated outside the multimode interference coupler 6, and the P+ -InGaAs layer is directly deposited on the P-InP layer in a plane.
S70: electrode layers are formed on the semiconductor substrate 1 and the contact layer 5, respectively.
Specifically, an N-type electrode 7 is formed on the lower side of the semiconductor substrate 1, and a P-type electrode 8 is formed on the upper side of the contact layer 5.
In actual use, current is respectively led into the N-type electrode 7 and the P-type electrode 8 through an external circuit, the current flows to the active region 3, light waves are excited in the active region 3, the light waves are amplified and filtered through the multimode interference coupler 6 in the active region 3, and finally, a fundamental transverse mode with high output power and high purity is output.
S10: forming the active region 3 on the semiconductor substrate 1 includes: a lower confinement layer 31, a quantum well layer 32, and an upper confinement layer 33 are sequentially deposited on the semiconductor substrate 1.
Since the active region 3 includes the lower confinement layer 31, the quantum well layer 32 and the upper confinement layer 33 sequentially deposited from bottom to top, during the etching process, the SiO2 etching mask 10 may be deposited at the position corresponding to the non-etching region of the upper confinement layer 33, and then the lower confinement layer 31, the quantum well layer 32 and the upper confinement layer 33 are sequentially etched in the etching region from top to bottom, where the upper confinement layer 33 corresponding to the etching region needs to be completely etched, and at least the quantum well layer 32 corresponding to the etching region needs to be over-etched, that is, the etching depth needs to extend at least to the lower confinement layer 33 below the quantum well layer 32, so that the formed multimode interference coupler 6 can inhibit the lasing of the first-order mode, so that the output from the multimode interference coupler 6 is the fundamental transverse mode, and thus the power of the formed semiconductor laser is higher, the heat dissipation effect is better, and the thickness of the lower confinement layer 31 is not limited.
Preferably, in this embodiment, in the etching process, it is necessary to completely etch the upper confinement layer 33 and the quantum well layer 32 corresponding to the etching region, and over-etch the lower confinement layer 31 corresponding to the etching region, that is, over-etch the entire active region 3, so that the effect of suppressing the lasing of the first-order mode by the multimode interference coupler 6 is better, as shown in fig. 9 and 10, when over-etching the active region 3, the first-order mode in the active region 3 can be completely suppressed, and a fundamental transverse mode with high purity is output, so that the power of the semiconductor laser is higher.
Furthermore, by the above arrangement, the epitaxial structure of the active region 3 can be a conventional confinement structure or a large optical cavity structure. The conventional confinement structure is a conventional structure of the semiconductor laser, and the large optical cavity structure is to thicken the lower confinement layer 31 of the active region 3, so that the thickness of the corresponding active region 3 is larger than that of the active region 3 of the conventional structure. Although the increase in thickness of the active region 3 may cause the first-order mode lasing, since the active region 3 is over-etched in order to form the multimode interference coupler 6 in the present application, the ability of the active region 3 to filter the first-order mode may be improved, and thus the power of the semiconductor laser may not be affected even if the epitaxial structure of the quantum well layer 32 is set to a large optical cavity structure.
In one embodiment, the following steps are further included before forming the active region 3 on the semiconductor substrate 1: forming a semiconductor buffer layer 2 on a semiconductor substrate 1; after forming the active region 3 on the semiconductor substrate 1, the following steps are also included: a semiconductor protection layer 4 is formed on the active region 3.
That is, the semiconductor buffer layer 2, the active region 3, and the semiconductor protective layer 4 are sequentially deposited on the semiconductor substrate 1. The semiconductor buffer layer 2 is an N-InP type semiconductor buffer layer 2, and the semiconductor protection layer 4 is an i-InP type semiconductor protection layer 4.
In the etching process, the semiconductor protection layer 4 corresponding to the etching region is completely etched, and the active region 3 corresponding to the etching region is over etched, that is, at least the semiconductor buffer layer 2 is partially etched, so that the formed multimode interference coupler 6 has the function of inhibiting the first-order mode.
In addition, when the contact layer 5 is formed, the contact layer 5 is deposited over the semiconductor protection layer 4 and over the semiconductor buffer layer 2 corresponding to the etched region.
In this embodiment, the multimode interference coupler 6 is a 1X1 type multimode interference coupler 6, and specifically includes a multimode interference coupler waveguide 62 and two first-order mode straight waveguides 61, where the two first-order mode straight waveguides 61 are symmetrically connected to opposite sides of the multimode interference coupler waveguide 62. Assuming that the first direction X in fig. 7 is the longitudinal direction of the semiconductor laser and the second direction Y is the width direction of the semiconductor laser, one first-order mode straight waveguide 61, the multimode interference coupler waveguide 62, and the other first-order mode straight waveguide 61 are sequentially connected along the first direction X, and the multimode interference coupler 6 is located at a substantially middle position of the semiconductor laser along the second direction Y.
The widths of the two first-order mode straight waveguides 61 are equal, the width of the multimode interference coupler waveguide 62 is larger than the width of the two first-order mode straight waveguides 61, and the multimode interference coupler waveguide 62 can suppress the lasing of the first-order modes. The specific widths of the two first-order mode straight waveguides 61 can be calculated according to the light waves excited in the active area 3, and the calculation method is common in the art and is not described in detail herein.
In practical applications, light is generally emitted from one side of the semiconductor laser, and therefore, a reflective film is generally disposed on one of the two first-order mode straight waveguides 61 to prevent light from leaking out, and finally, the light is emitted from one of the first-order mode straight waveguides 61.
In one embodiment, prior to forming the electrode layer, the contact layers on both sides of the multimode interference coupler 6 are proton implanted to form high resistance regions. Specifically, proton implantation is performed on the contact layers on two sides of the two first-order mode straight waveguides 61 along the second direction Y, so that high-resistance regions 9 are formed on two sides of the first-order mode straight waveguides 61, so that the injected current can be concentrated and injected into the active region 3 without lateral diffusion, and the light emitting efficiency of the active region 3 is improved.
Referring to fig. 5, during proton implantation, a photoresist mask 11 may be deposited over the contact layer 5 corresponding to the non-etched region, and then proton implantation may be performed on the contact layer 5 at a position where the photoresist mask 11 is not present.
In addition, the injected protons may be he+ and h+, or even other protons, without being limited solely herein.
On the other hand, the application also provides a semiconductor laser which is manufactured by the manufacturing method of the semiconductor laser.
Specifically, the semiconductor laser includes a semiconductor substrate 1, an active region 3, a contact layer 5, and two electrode layers. The active region 3 is formed on the semiconductor substrate 1, the multimode interference coupler 6 is formed in the active region 3 through an etching process, the contact layer 5 is formed on the multimode interference coupler 6 and on a non-etched portion of the active region 3, and two electrode layers are respectively formed on the semiconductor substrate 1 and the contact layer 5. Specifically, an N-type electrode 7 is formed on the lower side of the semiconductor substrate 1, and a P-type electrode 8 is formed on the upper side of the contact layer 5.
The multimode interference coupler 6 is etched on the active region 3 by the etching process in the above-mentioned semiconductor laser manufacturing method.
In one embodiment, referring to fig. 3, the active region 3 includes a lower confinement layer 31, a quantum well layer 32, and an upper confinement layer 33 sequentially formed on the semiconductor substrate 1. The multimode interference coupler 6 at least comprises an upper confinement layer 33 and a quantum well layer 32, that is, when the etching process is performed, it is necessary to completely etch the upper confinement layer 31 corresponding to the etching region, and at least over-etch the quantum well layer 32 corresponding to the etching region.
In a preferred embodiment, referring to fig. 3, the multimode interference coupler 6 includes a lower confinement layer 31, a quantum well layer 32 and an upper confinement layer 33, and in the etching process, the upper confinement layer 33 and the quantum well layer 32 corresponding to the etching region need to be completely etched, and the lower confinement layer 31 corresponding to the etching region needs to be over-etched, that is, the whole active region 3 needs to be over-etched.
In one embodiment, referring to fig. 2 and 3, the semiconductor laser further includes a semiconductor buffer layer 2 formed between the semiconductor substrate 1 and the active region 3, and a semiconductor protection layer 4 formed on the active region 3. The multimode interference coupler 6 at least comprises a semiconductor protection layer 4 and an active region 3, specifically, in the etching process, the semiconductor protection layer 4 corresponding to the etching region is completely etched, and the active region 3 corresponding to the etching region is over-etched, that is, at least the semiconductor buffer layer 2 is partially etched, so that the formed multimode interference coupler 6 has the function of inhibiting the first-order mode.
The contact layer 5 is deposited over the semiconductor protection layer 4 and over the semiconductor buffer layer 2 corresponding to the etched region.
In one embodiment, referring to fig. 5, the contact layers 5 on both sides of the multimode interference coupler 6 have high resistance regions 9 implanted with protons. Specifically, proton implantation is performed on the contact layers on two sides of the two first-order mode straight waveguides 61 along the second direction Y, so that high-resistance regions 9 are formed on two sides of the first-order mode straight waveguides 61, so that the injected current can be concentrated and injected into the active region 3 without lateral diffusion, and the light emitting efficiency of the active region 3 is improved.
The foregoing description of the preferred embodiments of the application is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the application.
Claims (10)
1. A method of fabricating a semiconductor laser, comprising the steps of:
forming an active region on a semiconductor substrate;
dividing an etching region and a non-etching region above the active region, and etching the active region of the etching region to form a multimode interference coupler;
depositing a contact layer on the multimode interference coupler and on the active region of the etched region;
electrode layers are formed on the semiconductor substrate and the contact layer, respectively.
2. A method of fabricating a semiconductor laser as claimed in claim 1 wherein forming an active region on the semiconductor substrate comprises:
sequentially depositing a lower limiting layer, a quantum well layer and an upper limiting layer on the semiconductor substrate;
and in the etching process, the upper limiting layer corresponding to the etching region is completely etched, and at least the quantum well layer corresponding to the etching region is over etched.
3. The method of manufacturing a semiconductor laser according to claim 2, wherein the upper confinement layer and the quantum well layer corresponding to the etched region are completely etched in an etching process, and the lower confinement layer corresponding to the etched region is over-etched.
4. A method of fabricating a semiconductor laser as claimed in claim 1 wherein the epitaxial structure of the active region is a conventional confinement structure or a large optical cavity structure.
5. A method of fabricating a semiconductor laser as claimed in any one of claims 1 to 4, further comprising the steps of, prior to forming the active region on the semiconductor substrate:
forming a semiconductor buffer layer on the semiconductor substrate;
the method further comprises the following steps after the active region is formed on the semiconductor substrate:
forming a semiconductor protection layer on the active region;
in the etching process, the protective layer corresponding to the etching area is completely etched, and the active area is over etched;
the contact layer is deposited above the semiconductor protection layer and above the semiconductor buffer layer corresponding to the etching region.
6. A method of fabricating a semiconductor laser as claimed in any one of claims 1 to 4 wherein the multimode interference coupler comprises a multimode interference coupler waveguide and two first order mode straight waveguides, the two first order mode straight waveguides being connected to opposite sides of the multimode interference coupler waveguide, respectively, the multimode interference coupler waveguide having a width greater than the widths of the two first order mode straight waveguides;
wherein two of the multimode interference coupler waveguides are capable of suppressing lasing of a first order mode.
7. A method of fabricating a semiconductor laser as claimed in any one of claims 1 to 4 wherein prior to forming the electrode layer, the contact layers on both sides of the multimode interference coupler are subjected to proton implantation to form high resistance regions.
8. A semiconductor laser, comprising:
a semiconductor substrate;
the active area is formed on the semiconductor substrate, and a multimode interference coupler is formed after the active area is etched;
a contact layer formed on the multimode interference coupler and on the non-etched portion of the active region;
and two electrode layers respectively formed on the semiconductor substrate and the contact layer.
9. The semiconductor laser of claim 8, wherein the active region comprises a lower confinement layer, a quantum well layer, and an upper confinement layer formed in sequence on the semiconductor substrate;
the multimode interference coupler includes a lower confinement layer, a quantum well layer, and an upper confinement layer.
10. A semiconductor laser as claimed in claim 8 or 9 wherein the multimode interference coupler comprises a multimode interference coupler waveguide and two first order mode straight waveguides, the two first order mode straight waveguides being connected to opposite sides of the multimode interference coupler waveguide, respectively, the multimode interference coupler waveguide having a width greater than the width of the two first order mode straight waveguides;
wherein two of the multimode interference coupler waveguides are capable of suppressing lasing of a first order mode.
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| CN202210520911.1A CN117096730A (en) | 2022-05-13 | 2022-05-13 | Semiconductor laser manufacturing method and semiconductor laser |
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| CN202210520911.1A CN117096730A (en) | 2022-05-13 | 2022-05-13 | Semiconductor laser manufacturing method and semiconductor laser |
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