CN117089814A - Novel technology for enhancing interfacial binding force of TaN film - Google Patents
Novel technology for enhancing interfacial binding force of TaN film Download PDFInfo
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- CN117089814A CN117089814A CN202311133682.9A CN202311133682A CN117089814A CN 117089814 A CN117089814 A CN 117089814A CN 202311133682 A CN202311133682 A CN 202311133682A CN 117089814 A CN117089814 A CN 117089814A
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- 230000002708 enhancing effect Effects 0.000 title claims abstract description 18
- 238000005516 engineering process Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 238000000034 method Methods 0.000 claims abstract description 37
- 238000004544 sputter deposition Methods 0.000 claims abstract description 27
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims abstract description 19
- 230000001965 increasing effect Effects 0.000 claims abstract description 15
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- 239000002245 particle Substances 0.000 claims abstract description 4
- 230000001105 regulatory effect Effects 0.000 claims abstract description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000003723 Smelting Methods 0.000 claims description 3
- 238000005238 degreasing Methods 0.000 claims description 3
- 238000005086 pumping Methods 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 238000007664 blowing Methods 0.000 claims description 2
- 238000007670 refining Methods 0.000 claims description 2
- 238000005477 sputtering target Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000011248 coating agent Substances 0.000 abstract description 5
- 238000000576 coating method Methods 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 238000005265 energy consumption Methods 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000005336 cracking Methods 0.000 abstract description 2
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 47
- 239000010409 thin film Substances 0.000 description 7
- 238000005259 measurement Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to the technical field of electronic element manufacture, in particular to a method for manufacturing an Al-based electronic element by using an Al-based alloy 2 O 3 Sputtering to manufacture TaN film with strong binding force on the substrate at room temperature; the method for enhancing the interfacial binding force of the TaN film is carried out according to the following steps: s1, wet cleaning Al 2 O 3 A substrate; s2, vacuum loading Al 2 O 3 A substrate; s3, sputtering a target, turning on a direct-current sputtering power supply, gradually increasing power, and respectively maintaining the power for 1-2 minutes at 100W, 200W and 300W; s4, during the initial 30-60 seconds of the beginning of sputtering, ar gas is adopted as working gas, and sputtered Ta particles are utilized to bombard Al 2 O 3 The surface of the substrate can form a bonding layer with the thickness of 5-10nm at the interface of the film base; s5, adding N after forming the bonding layer 2 The sputtering pressure is regulated to Ar andN 2 working gas pressure of the mixed gas. The invention has the beneficial effects that: 1. the invention is completed under the condition that the substrate is not heated (room temperature), thereby simplifying the complex process of heating the substrate during sputtering coating, reducing the energy consumption for film production and improving the coating efficiency. 2. The interfacial binding force of the film base is enhanced, and the problems of unstable film base binding, easy cracking, peeling, falling off and unstable element performance under the room temperature condition for a long time are solved.
Description
Technical Field
The present invention relates to the field of electronic device manufacturing technology, and in particular, to a method for manufacturing an electronic deviceAt Al 2 O 3 And sputtering the substrate at room temperature to prepare the TaN film with strong binding force.
Background
With the development of smart phones, electronic devices are multifunctional, integrated and intelligent, and thin film electronic components (thin film resistor, thin film capacitor and thin film inductor) gradually exhibit advantages that cannot be replaced by traditional electronic components, such as high temperature resistance, long service life, good stability, high integration and the like. Among various electronic components, particularly in high-performance capacitive components of multilayer film construction, taN thin films exhibit excellent performance.
The TaN film material has the advantages of low resistance temperature coefficient, high mechanical strength, high temperature resistance, good chemical stability, hydrochloric acid, nitric acid and hydrofluoric acid corrosion resistance and the like, and is very suitable for being used as a film material of an electronic element and also widely used as an anti-diffusion layer between a semiconductor and a ceramic medium in an integrated circuit. The structure and sheet resistance of TaN can be changed by sputtering process parameters to adapt to the requirements of different electronic elements. Therefore, the prepared high-quality TaN film has important practical significance for improving the quality of electronic devices.
Although TaN films have many excellent properties, the films are not used alone and must be plated on Al 2 O 3 The characteristics and functions of the TaN film can be exerted on the ceramic substrate. Therefore, the bonding force between the film layer and the substrate becomes a key technology for plating the high-quality TaN film. For example, in high temperature environments, it is somewhat difficult to maintain high accuracy in TaN films. The temperature is too high, the molecular thermal motion at the interface formed by the substrate and the film is accelerated, the adhesion between the film and the substrate is reduced, the film layer is peeled off, and the performance of the element is unstable. The current method for solving the problems is mainly to process the surface of the substrate to eliminate the influence of impurities and the like by optimizing process parameters, such as CN202210531889.0, a high-efficiency tantalum nitride film resistor and a preparation method thereof, increasing the substrate temperature, such as CN201811517604.8, a method for preparing a tantalum nitride film on an alumina ceramic substrate.
Although TaN thin films can be improved by adjustment of sputtering process parametersFilm and Al 2 O 3 The bonding force of the substrate interface, but the process parameter adjustment is mainly used for adapting to the phase structure and the sheet resistance value of the TaN thin layer to be optimized, and is the process parameter which must be considered in the sputtering coating. The bonding force of the film layer can be enhanced by adjusting the technological parameters, but the effect is limited. That is, the process parameters capable of enhancing the interfacial bonding force do not meet the requirements for the structure and performance of the TaN film. Therefore, it is necessary to find a method for enhancing the interfacial bonding force without affecting the process parameters of the film phase structure.
In addition, the substrate is heated to raise the temperature of the base, so that the movement activity of atoms on the surface of the substrate can be effectively increased, the film base binding force can be enhanced, the film quality can be improved, and the formation of voids in the TaN film can be reduced, which proves to be an effective way. However, it takes a long time to uniformly heat the substrate to 200 ℃ or higher, and after the film plating is completed, it is necessary to naturally cool the temperature to near room temperature in vacuum to recover the sample, which takes several times longer than the heating time. The energy saving and emission reduction and the sputtering film forming efficiency are not the optimal choices. And to date, improving the interfacial bonding force by increasing the substrate temperature has become a non-trivial choice, as no other technique has been available. The invention solves the problem, enhances the interfacial binding force of the film base under the room temperature condition, reduces the energy consumption, improves the film making efficiency and improves the film quality.
Disclosure of Invention
The invention aims to provide a novel technology for enhancing the interfacial binding force of a TaN film, and aims to solve the problems that in the prior art, the binding force between the film and a substrate is weak, the film is easy to crack, peel, fall off and unstable in performance at room temperature (without heating the substrate).
In order to achieve the above purpose, the invention adopts a new technology for enhancing the interfacial bonding force of the TaN film, and the method for enhancing the interfacial bonding force of the TaN film is carried out according to the following steps:
s1, wet cleaning Al 2 O 3 A substrate;
s2, vacuum loading Al 2 O 3 A substrate;
s3, sputtering a target, turning on a direct-current sputtering power supply, gradually increasing power, and respectively maintaining the power of 100W, 200W and 300W for 1-2 minutes for target smelting;
s4, during the initial 30-60 seconds of the beginning of sputtering, ar gas is adopted as working gas, and Ta particles are utilized to bombard Al 2 O 3 The surface of the substrate can form a bonding layer with the thickness of 5-10nm at the interface of the film base;
s5, adding N after forming the bonding layer 2 The sputtering pressure is regulated to Ar and N 2 Working gas pressure of the mixed gas.
Preferably, the S1 specifically is: first, two-sided polished Al 2 O 3 Immersing the substrate in absolute ethanol solution, ultrasonic cleaning for 5min, and washing Al with deionized water 2 O 3 The surface of the substrate is wiped by a degreasing towel , then the substrate is placed in a container filled with deionized water for ultrasonic cleaning for 5min, and finally the substrate is dried by high-pressure clean air.
Preferably, the S2 specifically is: al after blowing to dryness 2 O 3 The substrate is placed in the sample chamber and the vacuum pumping system is started. When the vacuum degree of the process chamber and the sample chamber is lower than 20Pa, a gate valve between the process chamber and the sample chamber is opened, a substrate in the sample chamber is sent to a sample base of the process chamber, and the gate valve is closed. When the basic vacuum degree of the working chamber reaches 3 multiplied by 10 -5 In Pa, the target base distance was adjusted to 60mm by using a lifting system of the sample base.
Preferably, the S3 specifically is: firstly, closing a shielding plate of a sputtering target, opening a direct-current sputtering power supply, gradually increasing power, generating glow discharge when the power reaches 100W, and refining the target for 2min in the state; if the glow discharge is not generated, continuing to increase the power until the glow discharge is generated, and then adjusting the power back to 100W for 2min; then the power was increased to 200W, the target was held for 2min, and the power was increased to 300W, and the target was held for 1min.
Preferably, the Ar gas working pressure is lower than 0.1Pa.
Preferably, the Ar and N 2 The working pressure of the mixed gas is 1.0Pa.
Preferably, the Ar and N 2 The flow ratio of the mixed gas is 98:2.
compared with the prior art, the invention provides a novel technology for enhancing the interfacial binding force of the TaN film, which has the following beneficial effects:
1. the invention is completed under the condition that the substrate is not heated (room temperature), thereby simplifying the complex process of heating the substrate during sputtering coating, reducing the energy consumption of film production and improving the coating efficiency;
2. the interfacial binding force of the film base is enhanced, and the problems of unstable film base binding, easy cracking, peeling, falling off and unstable element performance under the room temperature condition for a long time are solved.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is Al 2 O 3 SEM observation images of the cross section of the bonding layer formed between the substrate and the TaN film.
Fig. 2 is a TaN surface SEM observation image.
Figure 3 shows XRD measurements of TaN films.
FIG. 4 shows the EDX measurement results of TaN thin films, and the spectral line intensity of each element.
Detailed Description
The following detailed description of embodiments of the invention is exemplary and intended to be illustrative of the invention and not to be construed as limiting the invention.
The method for enhancing the interfacial bonding force of the TaN film in the embodiment of the invention is carried out according to the following steps:
s1, wet cleaning Al 2 O 3 Substrate, al polished on both sides 2 O 3 Immersing the substrate in absolute ethanol solution, ultrasonic cleaning for 5min, and removingIon water washing of Al 2 O 3 The surface of the substrate is wiped by a degreasing towel , then the substrate is placed in a container filled with deionized water for ultrasonic cleaning for 5min, and finally the substrate is dried by high-pressure clean air;
s2, vacuum loading Al 2 O 3 Substrate, al 2 O 3 The substrate is placed in the sample chamber and the vacuum pumping system is started. When the vacuum degree of the process chamber and the sample chamber is higher than 20Pa, a gate valve between the process chamber and the sample chamber is opened, a substrate in the sample chamber is sent to a sample base of the process chamber, and the gate valve is closed. When the basic vacuum degree of the working chamber reaches 3 multiplied by 10 -5 When Pa, opening an Ar gas flow meter to start gas filling into the process chamber, adjusting the gas pressure of the process chamber to 0.1Pa, and adjusting the target base distance to 60mm by using a lifting system of the sample base;
s3, sputtering a target, namely firstly closing a shielding plate of the target, opening a direct-current sputtering power supply, gradually increasing power, generating glow discharge when the power reaches 100W, and smelting the target in the state for 2min; then the power is increased to 200W, the target is held for 2min, and then the power is increased to 300W, and the target is held for 1 min;
s4, opening the shielding plate, and starting sputtering to plate the Ta bonding layer for 1 min;
s5, adding N after forming the bonding layer 2 Closing the shielding plate, opening the N2 airflow meter, and adjusting Ar: n (N) 2 The flow ratio is 98:2, adjusting the pressure of the working chamber to 1.0Pa, opening the shielding plate, and starting TaN reactive sputtering. The sputtering parameters are as follows: substrate temperature: room temperature, target distance 60mm, DC power 300W, current density 0.6A, sputtering duration 10 min, then closing the shutter, closing the power supply, etc.
At Al 2 O 3 Ta bonding layer, taN film and Al on substrate 2 O 3 A cross-sectional view of the substrate interface is shown in fig. 1; meanwhile, the surface structure of the sample is measured, the TaN film is of a polycrystalline structure, polycrystalline particles are uniformly distributed, and crystal boundaries are clear, as shown in figure 2; the phase structure of the TaN film was measured as shown in fig. 3; the distribution of constituent elements in the plated sample film was measured as shown in fig. 4. Measurement scoreThe analysis result shows that the Ta binding layer plays a strong binding role between the film and the substrate, and the interfacial binding force between the film and the substrate is enhanced.
Claims (7)
1. A novel technology for enhancing the interfacial bonding force of a TaN film is characterized in that the method for enhancing the interfacial bonding force of the TaN film is carried out according to the following steps:
s1, wet cleaning Al 2 O 3 A substrate;
s2, vacuum loading Al 2 O 3 A substrate;
s3, sputtering a target, turning on a direct-current sputtering power supply, gradually increasing power, and respectively maintaining the power of 100W, 200W and 300W for 1-2 minutes for target smelting;
s4, during the initial 30-60 seconds of the beginning of sputtering, ar gas is adopted as working gas, and sputtered Ta particles are utilized to bombard Al 2 O 3 The surface of the substrate can form a bonding layer with the thickness of 5-10nm at the interface of the film base;
s5, adding N after forming the bonding layer 2 The sputtering pressure is regulated to Ar and N 2 Working gas pressure of the mixed gas.
2. The novel technique for enhancing interfacial bonding force of TaN film according to claim 1, wherein the step S1 is specifically: first, two-sided polished Al 2 O 3 Immersing the substrate in absolute ethanol solution, ultrasonic cleaning for 5min, and washing Al with deionized water 2 O 3 The surface of the substrate is wiped by a degreasing towel , then the substrate is placed in a container filled with deionized water for ultrasonic cleaning for 5min, and finally the substrate is dried by high-pressure clean air.
3. The novel technique for enhancing interfacial bonding force of TaN film according to claim 1, wherein the step S2 is specifically: al after blowing to dryness 2 O 3 The substrate is placed in the sample chamber and the vacuum pumping system is started. When the vacuum degree of the process chamber and the sample chamber is lower than 20Pa, opening a gate valve between the process chamber and the sample chamber to send the substrate in the sample chamber into the process chamberAnd closing the gate valve. When the basic vacuum degree of the working chamber reaches 3 multiplied by 10 -5 In Pa, the target base distance was adjusted to 60mm by using a lifting system of the sample base.
4. The novel technique for enhancing interfacial bonding force of TaN film according to claim 1, wherein the step S3 is specifically: firstly, closing a shielding plate of a sputtering target, opening a direct-current sputtering power supply, gradually increasing power, generating glow discharge when the power reaches 100W, and refining the target for 2min in the state; if the glow discharge is not generated, continuing to increase the power until the glow discharge is generated, and then adjusting the power back to 100W for 2min; then the power was increased to 200W, the target was held for 2min, and the power was increased to 300W, and the target was held for 1min.
5. The novel technique for enhancing interfacial bonding force of TaN film as described in claim 1, wherein said Ar gas working pressure is lower than 0.1Pa.
6. The novel technique for enhancing interfacial bonding force of TaN film as claimed in claim 1, wherein Ar and N are as follows 2 The working pressure of the mixed gas is 1.0Pa.
7. The novel technique for enhancing interfacial bonding force of TaN film as claimed in claim 1, wherein Ar and N are as follows 2 The flow ratio of the mixed gas is 98:2.
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| CN202311133682.9A CN117089814A (en) | 2023-09-05 | 2023-09-05 | Novel technology for enhancing interfacial binding force of TaN film |
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| CN202311133682.9A CN117089814A (en) | 2023-09-05 | 2023-09-05 | Novel technology for enhancing interfacial binding force of TaN film |
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