CN117082908A - 一种新型面板架构 - Google Patents
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- 239000004065 semiconductor Substances 0.000 claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- -1 boron ions Chemical class 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 6
- 230000000007 visual effect Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 4
- 230000008054 signal transmission Effects 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
- G09F9/335—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes being organic light emitting diodes [OLED]
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
本发明提供一种新型面板架构，包括有显示区和GIP电路，每一行像素均由一级GIP电路驱动，GIP电路设置于显示区的下方；面板的层级结构为：包括有基板，基板的顶部设置有LTPS半导体层，在LTPS半导体层的顶部设置有第一绝缘层，第一绝缘层的顶部设置有第一金属层，第一金属层的顶部设置有绝缘平坦层，绝缘平坦层的顶部设置有第二金属层，第二金属层与LTPS半导体层的漏极连接，第二金属层的顶部设置有第二绝缘层，第二绝缘层的顶部设置有IGZO半导体，IGZO半导体的两侧搭接有第三金属层。本发明通过结合IGZO和LTPS两种面板制程，使得平面上LTPS GIP电路可完全隐藏于面板IGZO像素驱动电路的显示区内，实现面板左右两侧真正的无边框显示，使人眼在视觉上得到更好的观感。
Description
技术领域
本发明涉及显示面板技术领域，尤其涉及一种新型面板架构。
背景技术
随着面板技术的发展，追求更大屏占比的窄边框显示面板逐渐成为主流，且正朝着无边框显示的方向发展。目前市面上宣称的无边框显示面板，外围都具有较窄的黑色外边框，其下分布着显示驱动电路如GIP(Gate Driver In Panel)。
而且，根据面板使用的TFT半导体材料和制程的不同，可分为IGZO(氧化铟镓锌)面板，LTPS(低温多晶硅)面板和A-si面板。其中IGZO和LTPS的电子迁移率较A-si大，故目前市面上主流高端的OLED面板使用IGZO或LTPS半导体。
主流的IGZO面板和LTPS面板的显示区域100和GIP驱动电路200相对位置如图1所示，GIP电路分布于显示区的两侧。
以长度160mm，宽度75mm的手机屏幕为例，其显示区域也为160mmX75mm，像素以阵列的方式布满整个显示区域，如图2所示，每个像素中都有一个2T1C驱动电路：包含一个开关TFT，一个驱动TFT、一个储存电容C和一个有机发光二级管(OLED)。
GIP电路分布于面板两侧，CK脉冲讯号和与之相反的CKB脉冲讯号等构成驱动讯号，例如，设置四条脉冲讯号CK1～CK4，CK1和CK3互为相反讯号，CK2和CK4互为相反讯号。每一级GIP电路都由输出TFT发送高电位讯号驱动打开该行像素驱动电路中的开关TFT打开。
由于现有技术中，GIP电路设置在面板的两侧，在较暗使用环境下或黑屏状态下，人眼不易察觉面板周围的黑色窄边，视觉上边框被隐藏了，但在较亮环境或面板点亮的情况下，依然可以清晰地看到黑色的窄边框，故不是真实的无边框显示。
发明内容
本发明要解决的技术问题，在于提供一种新型面板架构，一块面板上使用IGZO和LTPS两种制程，将GIP电路隐藏于显示区下方的新型面板架构，实现面板左右两侧的无边框显示。
本发明是这样实现的：
本发明提供了一种新型面板架构，包括有由复数个像素组成的显示区，复数个所述像素排列成N行，所述面板架构还包括N级使用LTPS TFT的GIP电路，每一行所述像素均由一级GIP电路驱动，每一所述像素均包括使用IGZO TFT的驱动电路，所述GIP电路设置于显示区的下方；
所述面板的层级结构为：
包括有基板，所述基板的顶部设置有用作LTPS TFT源级和漏极的LTPS半导体层，在所述LTPS半导体层的顶部设置有第一绝缘层，所述第一绝缘层的顶部设置有第一金属层，所述第一金属层的顶部设置有绝缘平坦层，所述绝缘平坦层的顶部设置有用作IGZOTFT栅极的第二金属层，所述第二金属层穿过绝缘平坦层和第一绝缘层与LTPS半导体层的漏极连接，所述第二金属层的顶部设置有第二绝缘层，所述第二绝缘层的顶部设置有IGZO半导体，所述IGZO半导体的两侧搭接有用作IGZO TFT的源极和漏极的第三金属层。
进一步的，所述绝缘平坦层的厚度为第二金属层厚度的3-5倍。
进一步的，奇数级所述GIP电路设置在显示区左侧像素的下方，偶数级所述GIP电路设置在显示区右侧像素的下方。
进一步的，所述LTPS半导体层的两侧通过掺杂硼离子形成源级和漏极。
进一步的，所述第一金属层由用作LTPS TFT栅极的栅极部和用作CK讯号走线的讯号走线部组成，所述栅极部在垂直方向上与LTPS半导体层重合，所述讯号走线部在垂直方向上与LTPS半导体层相错开。
本发明的优点在于：本发明通过结合IGZO和LTPS两种面板制程，使得平面上LTPSGIP电路可完全隐藏于面板IGZO像素驱动电路的显示区内，实现面板左右两侧真正的无边框显示，使人眼在视觉上得到更好的观感。
附图说明
下面参照附图结合实施例对本发明作进一步的说明。
图1为现有技术中显示区域与GIP驱动电路相对位置示意图。
图2为现有技术中显示区域像素驱动电路示意图。
图3为本发明面板架构示意图。
图4为本发明每一级GIP电路的输出讯号G(n)驱动该级像素驱动电路中的开关TFT打开的示意图。
图5为本发明面板架构右侧截面图。
图6为本发明面板架构左侧截面图。
图中标号说明：
100、显示区域；200、GIP驱动电路；1、显示区；2、GIP电路；3、基板；4、LTPS半导体层；5、IGZO半导体；6、栅极部；7、讯号走线部。
具体实施方式
请参阅图1至图6，本发明提供了一种新型面板架构，包括有由复数个像素组成的显示区1，复数个所述像素排列成N行，所述面板架构还包括N级GIP电路2，每一行所述像素均由一级GIP电路驱动，每一所述像素均包括有使用IGZO TFT的像素驱动电路，每一级GIP电路的输出讯号G(n)驱动该级像素驱动电路中的开关TFT打开，所述GIP电路设置于显示区的下方；
奇数级所述GIP电路设置在显示区左侧像素的下方，使用的脉冲讯号为CK1和CK3，偶数级所述GIP电路设置在显示区右侧像素的下方，使用的脉冲讯号为CK2和CK4。
在本发明中，下层的GIP电路TFT使用LTPS TFT，上层像素驱动电路TFT使用IGZOTFT。
采用上述面板架构后，所述面板的层级结构为：
包括有基板3，所述基板3的顶部设置有用作LTPS TFT源级和漏极的LTPS半导体层4，在所述LTPS半导体层4的顶部设置有第一绝缘层GI，所述第一绝缘层GI的顶部设置有第一金属层M1，所述第一金属层M1的顶部设置有绝缘平坦层PV1，所述绝缘平坦层PV1的顶部设置有用作IGZO TFT栅极的第二金属层M2，所述第二金属层M2穿过绝缘平坦层PV1和第一绝缘层GI与LTPS半导体层4的漏极连接，所述第二金属层M2的顶部设置有第二绝缘层PV2，所述第二绝缘层PV2的顶部设置有IGZO半导体5，所述IGZO半导体5的两侧搭接有用作IGZOTFT的源极和漏极的第三金属层M3。
所述第一金属层M1由用作LTPS TFT栅极的栅极部6和用作CK讯号走线的讯号走线部7组成，所述栅极部6在垂直方向上与LTPS半导体层4重合，所述讯号走线部7在垂直方向上与LTPS半导体层4相错开。讯号走线部7用作CK1～CK4的讯号传送。图5为面板右侧的剖视图，两个讯号走线部7分别用于CK2和CK4的讯号传送，图6为面板左侧的剖视图，两个讯号走线部7分别用于CK1和CK3的讯号传送。
具体的，所述绝缘平坦层PV1的厚度为第二金属层M2厚度的3-5倍，可使上层的IGZO TFT在较平坦的平面上成膜，保证制程的稳定性，同时减小寄生电容的影响，降低杂讯的干扰。
具体的，LTPS半导体层4的材料选用Poly(多晶硅)，所述LTPS半导体层4的两侧通过掺杂硼离子形成源级和漏极。在图5所示结构中，LTPS半导体层4的漏极位于右侧，在图6所示结构中，LTPS半导体层4的漏极位于左侧。
本发明通过结合IGZO和LTPS两种面板制程，使得平面上LTPS GIP电路可完全隐藏于面板IGZO像素驱动电路的显示区内，实现面板左右两侧真正的无边框显示，使人眼在视觉上得到更好的观感。
虽然以上描述了本发明的具体实施方式，但是熟悉本技术领域的技术人员应当理解，我们所描述的具体的实施例只是说明性的，而不是用于对本发明的范围的限定，熟悉本领域的技术人员在依照本发明的精神所作的等效的修饰以及变化，都应当涵盖在本发明的权利要求所保护的范围内。
Claims (5)
1.一种新型面板架构，其特征在于：包括有由复数个像素组成的显示区，复数个所述像素排列成N行，所述面板架构还包括N级使用LTPS TFT的GIP电路，每一行所述像素均由一级GIP电路驱动，每一所述像素均包括使用IGZO TFT的驱动电路，所述GIP电路设置于显示区的下方；
所述面板的层级结构为：
包括有基板，所述基板的顶部设置有用作LTPS TFT源级和漏极的LTPS半导体层，在所述LTPS半导体层的顶部设置有第一绝缘层，所述第一绝缘层的顶部设置有第一金属层，所述第一金属层的顶部设置有绝缘平坦层，所述绝缘平坦层的顶部设置有用作IGZO TFT栅极的第二金属层，所述第二金属层穿过绝缘平坦层和第一绝缘层与LTPS半导体层的漏极连接，所述第二金属层的顶部设置有第二绝缘层，所述第二绝缘层的顶部设置有IGZO半导体，所述IGZO半导体的两侧搭接有用作IGZO TFT的源极和漏极的第三金属层。
2.如权利要求1所述的一种新型面板架构，其特征在于：所述绝缘平坦层的厚度为第二金属层厚度的3-5倍。
3.如权利要求1所述的一种新型面板架构，其特征在于：奇数级所述GIP电路设置在显示区左侧像素的下方，偶数级所述GIP电路设置在显示区右侧像素的下方。
4.如权利要求1所述的一种新型面板架构，其特征在于：所述LTPS半导体层的两侧通过掺杂硼离子形成源级和漏极。
5.如权利要求1所述的一种新型面板架构，其特征在于：所述第一金属层由用作LTPSTFT栅极的栅极部和用作CK讯号走线的讯号走线部组成，所述栅极部在垂直方向上与LTPS半导体层重合，所述讯号走线部在垂直方向上与LTPS半导体层相错开。
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