CN117081544A - Broadband miniaturized 5-bit MMIC digital phase shifter adopting short circuit branch array - Google Patents
Broadband miniaturized 5-bit MMIC digital phase shifter adopting short circuit branch array Download PDFInfo
- Publication number
- CN117081544A CN117081544A CN202311038388.XA CN202311038388A CN117081544A CN 117081544 A CN117081544 A CN 117081544A CN 202311038388 A CN202311038388 A CN 202311038388A CN 117081544 A CN117081544 A CN 117081544A
- Authority
- CN
- China
- Prior art keywords
- switch
- phase shifting
- phase
- capacitor
- pass filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 claims description 95
- 230000005540 biological transmission Effects 0.000 claims description 52
- 230000010363 phase shift Effects 0.000 claims description 40
- 238000013461 design Methods 0.000 claims description 21
- 238000001914 filtration Methods 0.000 claims description 8
- 238000002955 isolation Methods 0.000 claims description 7
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 238000003780 insertion Methods 0.000 abstract description 6
- 230000037431 insertion Effects 0.000 abstract description 6
- 238000000034 method Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 3
- 230000001429 stepping effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H17/00—Networks using digital techniques
- H03H17/08—Networks for phase shifting
Landscapes
- Waveguide Switches, Polarizers, And Phase Shifters (AREA)
Abstract
A broadband miniaturized 5-bit MMIC digital phase shifter adopting a short-circuit branch array is formed by cascading a first phase shifting unit, a second phase shifting unit and a third phase shifting unit along the input to the output; or the third phase shifting unit, the second phase shifting unit and the first phase shifting unit are cascaded; the second phase shifting unit adopts a high-low pass filter structure and has a reference state and a phase shifting state; the first phase shifting unit and the third phase shifting unit are respectively provided with a reference state and three phase shifting states, and a multi-phase shifting state reflection type phase shifting structure is adopted. The invention adopts a multi-phase-shifting state reflection structure based on the short circuit branch array, can realize broadband phase shifting, has better matching performance and phase shifting precision, and has smaller insertion loss and floating.
Description
Technical Field
The invention belongs to the technical field of digital phase shifters, and particularly relates to a broadband miniaturized 5-bit MMIC (monolithic microwave integrated circuit) digital phase shifter adopting a short circuit branch array, which can be widely applied to various fields such as phased array radar, mobile communication, digital microwave communication, instruments and meters, intelligent antenna systems and the like.
Background
The phase shifter is a common microwave signal control device, and can change the phase frequency characteristic of a circuit to realize the phase shift of an output signal. The digital phase shifter is a core element of a T/R (transmitting/receiving) component in the phased array radar, and the beam electric control scanning is realized by controlling the phase change of each radiation unit in the array. As phased array systems continue to evolve toward broadband, miniaturization, and high performance, corresponding demands are also being placed on the evolution of digital phase shifters.
The existing MMIC multi-bit digital phase shifter adopts a design mode of shifting a bit by one unit, for example CN110098818A, CN 109194303a, for a 5-bit phase shifter, five units of 11.25 °, 22.5 °, 45 °, 90 ° and 180 ° are respectively designed, and then the five units are cascaded, which has the following main drawbacks: 1) The design units are more, the design work is complex and difficult, and particularly, the topology types are more when the broadband design is performed; 2) The number of cascade units is large, so that the performance such as echo performance, phase shifting precision and the like are deteriorated when cascade design is performed; 3) The circuit size is large; 4) The chip cost is high.
At present, some designs of adjustable reflection type phase shifting units are available, including continuous adjustable reflection units such as CN109672424a and programmable multi-reflection phase shifters such as CN108463948A, but all have their own drawbacks, firstly, for continuous adjustable reflection units, continuous voltage control can introduce direct current power consumption, and because the phase shifting amount can be continuously changed, the reflection coefficient introduced by reflection load is continuously changed, and mismatch of input and output ports is easily caused in broadband design, so that although the phase is continuously adjustable, the design can not be applied to some broadband use scenes; for the programmable multi-reflection phase shifter, the design is complex, the power consumption is larger, and the programmable multi-reflection phase shifter is manufactured into a monolithic integrated circuit by adopting a silicon-on-insulator (SOI) process, however, the silicon-based substrate has lower resistivity, so that the Complementary Metal Oxide Semiconductor (CMOS) process has the defects of large substrate loss and low Q value of a passive device, even if the process defects are overcome by some active structures, the phase shifter has larger phase shift error and overall power consumption, the complexity of the system is increased, meanwhile, the CMOS process has poor noise performance, the temperature and pressure resistance of the active device is not high, and compared with the mainstream GaAs (gallium arsenide) process in the current phase shifter design, the Complementary Metal Oxide Semiconductor (CMOS) process is inferior in size and performance, and is not suitable for being applied to occasions with low power consumption and high precision.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide the broadband miniaturized 5-bit MMIC digital phase shifter adopting the short-circuit branch array, which is designed based on the GaAs process, adopts a multi-phase-shifting state reflection type structure based on the short-circuit branch array, can realize broadband phase shifting, reduces the number of phase shifting units compared with the traditional multi-bit phase shifter design, relieves the error superposition problem when the phase shifters are cascaded, reduces the area, and has better matching performance and phase shifting precision and smaller insertion loss floating.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
a broadband miniaturized 5-bit MMIC digital phase shifter adopting a short-circuit branch array is formed by cascading a first phase shifting unit, a second phase shifting unit and a third phase shifting unit along the input to the output; or the third phase shifting unit, the second phase shifting unit and the first phase shifting unit are cascaded;
the second phase shifting unit adopts a high-low pass filter structure and has a reference state and a phase shifting state;
the first phase shifting unit and the third phase shifting unit are respectively provided with a reference state and three phase shifting states, and are respectively provided with a multi-phase shifting state reflection type phase shifting structure, the multi-phase shifting state reflection type phase shifting structure comprises a short circuit branch array, the short circuit branch array consists of eight microstrip transmission lines with one ends grounded, the short circuit branch array is symmetrical in pairs, the phase of a reflected signal is offset by designing length and width parameters of the short circuit branch array, and a specified phase difference is formed between the short circuit branch array and the reference state, so that phase shifting is realized.
In one embodiment, the second phase shifting unit has a reference state and a 180 ° phase shifting state, and the first phase shifting unit has a reference state and three phase shifting states of 45 °, 90 °, 135 °; the third phase shifting unit has a reference state and three phase shifting states of 11.25 °, 22.5 °, 33.75 °.
In one embodiment, the second phase shifting unit adopts a five-order high-low pass filter structure.
In one embodiment, the second phase shifting unit includes a high-pass filter network and a low-pass filter network, where the high-pass filter network includes a first switch M1, a high-pass filter, and a fourth switch M4 that are sequentially connected; the low-pass filter network comprises a fifth switch M5, a low-pass filter and an eighth switch M8 which are connected in sequence; the high-pass filter network and the low-pass filter network share a signal input end and a signal output end, the first switch M1 and the fourth switch M4 work synchronously and work asynchronously with the fifth switch M5 and the eighth switch M8, and phase shifting is realized through switching of the high-pass filter and the low-pass filter.
In one embodiment, the high-pass filter adopts LC filtering, a capacitor is arranged along a signal, and an inductor is grounded; the low-pass filter adopts LC filtering, an inductor is arranged along a signal, and a capacitor is grounded.
In one embodiment, the high pass filter includes a first capacitor C1, a second capacitor C2, a third capacitor C3, a first inductor L1, and a second inductor L2; the first capacitor C1, the second capacitor C2, and the third capacitor C3 are connected in series between the first switch M1 and the fourth switch M4, the first inductor L1 is grounded between the first capacitor C1 and the second capacitor C2, and the second inductor L2 is grounded between the second capacitor C2 and the third capacitor C3; the low-pass filter includes a third inductor L3, a fourth inductor L4, a fifth inductor L5, a fourth capacitor C4, and a fifth capacitor C5, wherein the third inductor L3, the fourth inductor L4, and the fifth inductor L5 are connected in series between the fifth switch M5 and the eighth switch M8, the fourth capacitor C4 is grounded between the third inductor L3 and the fourth inductor L4, and the fifth capacitor C5 is grounded between the fourth inductor L4 and the fifth inductor L5.
In one embodiment, the high-pass filter network further comprises a second switch M2 and a third switch M3, and the low-pass filter network further comprises a sixth switch M6 and a seventh switch M7; the second switch M2 is connected between the first switch M1 and the high pass filter, the third switch M3 is connected between the high pass filter and the fourth switch M4, the sixth switch M6 is connected between the fifth switch M5 and the low pass filter, and the seventh switch M7 is connected between the low pass filter and the eighth switch M8; the second switch M2, the third switch M3 and the first switch M1 operate synchronously, and the sixth switch M6, the seventh switch M7 and the eighth switch M8 operate synchronously.
In one embodiment, the multi-phase-shifting state reflection phase shifting structure is composed of a Lange coupler Lan1, a matching network and a phase shifting network, wherein the phase shifting network is composed of eight phase shifting modules with different parameters; the matching network is a sixth capacitor C6 and a seventh capacitor C7; the input end of the Lange coupler Lan1 is connected with signal input, the isolation end is connected with signal output, the through end is connected with one end of a sixth capacitor C6, the coupling end is connected with one end of a seventh capacitor C7, the other end of the sixth capacitor C6 is connected with four phase shifting modules, and the other end of the seventh capacitor C7 is connected with another four phase shifting modules; the four phase shifting modules are respectively and synchronously combined with the other four phase shifting modules in pairs to form a group, one group is opened and the other three groups are closed corresponding to one state, so that four states, namely a reference state and three phase shifting states, are obtained.
In one embodiment, each phase shifting module is formed by connecting a switch and a microstrip transmission line, wherein the microstrip transmission line is grounded, the switch is connected with a sixth capacitor C6 or a seventh capacitor C7, synchronization of a group of phase shifting modules is realized by corresponding switch control, the microstrip transmission line is used for phase shifting quantity design in each state, and different parameters of each phase shifting module refer to different parameters of the microstrip transmission line.
In one embodiment, each switch employs a PHEMT tube.
In one embodiment, the broadband miniaturized five-bit digital phase shifter takes 11.25 DEG as a phase stepping value, and 32-bit phase shifting state switching is realized in the range of 0-360 deg.
Compared with the prior art, the invention has the beneficial effects that:
1. the multi-phase shift reflection structure based on the short circuit branch array can replace the stepping effect of two phase shift units, reduces the number of cascading units, reduces the size, relieves the problem of phase shift error superposition caused by cascading of a plurality of units in the traditional phase shifter, has good precision, has the same phase shift topology in any phase shift state, and has small fluctuation of the insertion loss.
2. In the invention, a mode of sequential cascade is not adopted, but a cascade sequence of 45 degrees+90 degrees+135 degrees phase shifting unit, 180 degrees phase shifting unit and 11.25 degrees+22.5 degrees+33.75 degrees phase shifting unit is adopted, a multi-phase-shifting state reflection structure is used as an input and output end of the phase shifter, and the high-low pass phase shifter is wrapped by echo neutralization, so that the overall matching degree of the phase shifter can be improved, the overall echo performance of the phase shifter is improved, and the deterioration of phase shifting precision in cascade is relieved.
Drawings
Fig. 1 is a schematic diagram of the cascade of the present invention.
Fig. 2 is a schematic diagram of a 180 deg. phase shifting circuit of the present invention.
FIG. 3 is a schematic diagram of a multi-phase-shifting reflective phase-shifting structure according to the present invention.
Fig. 4 is a schematic diagram of a short circuit branch implementation reference state.
Fig. 5 is a schematic diagram of a principle of implementing a phase shift state of a short circuit branch.
FIG. 6 is a schematic diagram of reflectance phase diagrams in a short-circuited stub reference state and a phase-shifted state.
FIG. 7 is a graph showing the reflectance model under single-leg and double-leg conditions.
Detailed Description
The present invention will be described in further detail with reference to the following examples in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
As shown in fig. 1, the broadband miniaturized five-bit digital phase shifter of the invention is formed by cascading a first phase shifting unit, a second phase shifting unit and a third phase shifting unit along the input-to-output direction; or is formed by cascading a third phase shifting unit, a second phase shifting unit and a first phase shifting unit.
The second phase shifting unit adopts a high-low pass filter structure, and has a reference state and a phase shifting state, in this embodiment, a 180 ° phase shifting state. That is, the 180 ° phase shift unit adopts a high-low pass filter structure.
The multi-phase-shifting reflective phase-shifting structure mainly comprises a short circuit branch array controlled by a switch, wherein the short circuit branch array consists of eight microstrip transmission lines with one ends grounded, the two microstrip transmission lines are symmetrical, and the length and width parameters of the microstrip transmission lines are designed to enable the phase of a reflected signal to deviate and form a specified phase difference with the reference state, so that phase shifting is realized. The three phase shift states of the first phase shift unit are 11.25 degrees, 22.5 degrees and 33.75 degrees; the three phase shift states of the third phase shift unit are 45 °, 90 ° and 135 °. Namely, the 11.25 degrees+22.5 degrees+33.5 degrees phase shifting unit and the 45 degrees+90 degrees+135 degrees phase shifting unit adopt a multi-phase shifting state reflection type phase shifting structure.
The working frequency band of the digital phase shifter can be 10-16GHz generally, and according to the invention, the digital phase shifter adopts three phase shifting units of 11.25 degrees+22.5 degrees+33.75 degrees, 45 degrees+90 degrees+135 degrees and 180 degrees, and the 5-bit digital phase shifter corresponds to 2 in the range of 0-360 degrees 5 The step value is 360 °/32=11.25°, i.e., 32 phase shift states are 0 °, 11.25 °, 22.5 °, … …, 337.5 °, 348.75 °.
In specific implementation, the circuit of each phase shifting unit is designed independently, and after the circuit of each phase shifting unit is designed, the cascade sequence of multi-phase shifting reflection type, high-low-pass type and multi-phase shifting reflection type is adopted. The multi-phase-shifting reflective phase shifting structure can realize multi-phase shifting by using a single structure, has small occupied area, designs a phase superposition state, and avoids the problem of error superposition caused by superposition of multi-bit phase shifting amounts of the traditional phase shifter. The five-bit phase shifter only needs three units and two topologies, has simple design process and good port echo performance, can realize miniaturized design of the broadband phase shifter, and has high phase shifting precision, good amplitude stability, simple and convenient manufacture and high yield.
In one embodiment of the present invention, a form of a high-low pass filter structure is provided, referring to fig. 2, the second phase shifting unit includes a high-pass filter network and a low-pass filter network, and the high-pass filter network includes a first switch M1, a high-pass filter and a fourth switch M4 connected in sequence; the low-pass filter network comprises a fifth switch M5, a low-pass filter and an eighth switch M8 which are connected in sequence; the high-pass filter network and the low-pass filter network share a signal input and a signal output.
The working principle of the high-low pass filter circuit adopted for realizing 180 DEG phase shift in the embodiment is described as follows: the first switch M1 operates synchronously with the fourth switch M4 and asynchronously with the fifth and eighth switches M5, M8. By controlling the switch, different signal paths are switched to realize phase shift, the phase shift state and the reference state of the corresponding unit are respectively corresponding, and the two states can be interchanged. The high-pass filter has the function of phase lifting, the low-pass filter has the function of phase hysteresis, and when the first switch M1 and the fourth switch M4 are turned on and the fifth switch M5 and the eighth switch M8 are turned off, the high-pass filter is connected to the circuit; when the first switch M1 and the fourth switch M4 are turned off and the fifth switch M5 and the eighth switch M8 are turned on, the low-pass filter is connected to the circuit, and phase shifting is achieved through switching of the high-low pass filter. The high-low pass filter adopts a five-order design in order to realize large phase shift in the broadband, namely the high-low pass filter adopts a five-order high-low pass filter structure. The structure principle and the design are simple, the method is mature, and the lumped elements are adopted, so that the occupied area of the unit is small, and the design is compact.
In a further aspect of this embodiment, the high-pass filtering network further includes a second switch M2 and a third switch M3, and the low-pass filtering network further includes a sixth switch M6 and a seventh switch M7; the second switch M2 is connected between the first switch M1 and the high pass filter, the third switch M3 is connected between the high pass filter and the fourth switch M4, the sixth switch M6 is connected between the fifth switch M5 and the low pass filter, and the seventh switch M7 is connected between the low pass filter and the eighth switch M8; the second switch M2, the third switch M3 and the first switch M1 operate synchronously, and the sixth switch M6, the seventh switch M7 and the eighth switch M8 operate synchronously.
In this embodiment, the second switch M2, the third switch M3, the sixth switch M6, and the seventh switch M7 are all ground switches for enhancing isolation when the path is turned off.
In a further scheme, the high-pass filter adopts LC filtering, a capacitor is arranged along a signal, and an inductor is grounded; the low-pass filter also adopts LC filtering, an inductor is arranged along the signal, and a capacitor is grounded. Specifically, the high-pass filter includes a first capacitor C1, a second capacitor C2, a third capacitor C3, a first inductor L1, and a second inductor L2. The low-pass filter includes a third inductance L3, a fourth inductance L4, a fifth inductance L5, a fourth capacitance C4, and a fifth capacitance C5. The first capacitor C1, the second capacitor C2, and the third capacitor C3 are connected in series between the first switch M1 and the fourth switch M4, the first inductor L1 is grounded between the first capacitor C1 and the second capacitor C2, and the second inductor L2 is grounded between the second capacitor C2 and the third capacitor C3; the third inductor L3, the fourth inductor L4, and the fifth inductor L5 are connected in series between the fifth switch M5 and the eighth switch M8, the fourth capacitor C4 is grounded between the third inductor L3 and the fourth inductor L4, and the fifth capacitor C5 is grounded between the fourth inductor L4 and the fifth inductor L5.
In the embodiment of the invention, the switch adopts a GaAs PHEMT type gallium arsenide pseudomodulation doped heterojunction field effect transistor, which is equivalent to a very small on-resistance when being turned on and an extremely small isolation capacitor when being turned off. At this time, the complete second phase shift unit circuit is as shown in fig. 2, and is described as follows:
the circuit comprises a first switch M1, a second switch M2, a third switch M3, a fourth switch M4, a fifth switch M5, a sixth switch M6, a seventh switch M7, an eighth switch M8, a first inductor L1, a second inductor L2, a third inductor L3, a fourth inductor L4, a fifth inductor L5, a first capacitor C1, a second capacitor C2, a third capacitor C3, a fourth capacitor C4 and a fifth capacitor C5. The drain electrode of the first switch M1 is connected with one end of the first capacitor C1, the other end of the first capacitor C1 is connected with one end of the second capacitor C2 and one end of the first inductor L1, the other end of the first inductor L1 is grounded, the other end of the second capacitor C2 is connected with one end of the third capacitor C3 and one end of the second inductor L2, the other end of the second inductor L2 is grounded, the other end of the third capacitor C3 is connected with the source electrode of the fourth switch M4, the drain electrode of the fourth switch M4 is connected with the source electrode of the eighth switch M8, the drain electrode of the eighth switch M8 is connected with one end of the fifth inductor L5, the other end of the fifth inductor L5 is connected with one end of the fourth inductor L4 and one end of the fifth inductor C5, the other end of the fourth inductor L4 is grounded, the other end of the third inductor L3 is connected with the source electrode of the fifth switch M5, the drain electrode of the fifth switch M5 is connected with the source electrode of the first switch M1, the public end of the drain electrode of the first switch M1 and the capacitor C1 is connected with the source electrode of the second switch M2, the drain electrode of the second switch M2 is grounded, the public end of the source electrode of the third capacitor C3 and the source electrode of the fourth switch M4 is connected with the drain electrode of the third switch M3, the source electrode of the third switch M3 is grounded, the public end of the source electrode of the eighth switch M8 and the third inductor L3 is connected with the drain electrode of the seventh switch M7, the source electrode of the seventh switch M7 is grounded, the public end of the source electrode of the fifth switch M5 and the third inductor L3 is connected with the source electrode of the sixth switch M6, the drain electrode of the sixth switch M6 is grounded, the drain electrode of the fifth switch M5 and the source electrode of the first switch M1 are connected with the source electrode of the signal input end, and the drain electrode of the fourth switch M4 and the source electrode of the eighth switch M8 are connected with the signal output end.
The working principle of the high-low pass filter circuit adopted for realizing 180 DEG phase shift in the embodiment is described as follows: the first switch M1 operates synchronously with the fourth switch M4, the sixth switch M6, and the seventh switch M7, and operates asynchronously with the second switch M2, the third switch M3, the fifth switch M5, and the eighth switch M8. The first switch M1, the fourth switch M4, the sixth switch M6 and the seventh switch M7 are turned on, and when the second switch M2, the third switch M3, the fifth switch M5 and the eighth switch M8 are turned off, the high-pass filter is connected to the circuit; when the first switch M1, the fourth switch M4, the sixth switch M6 and the seventh switch M7 are turned off, the second switch M2, the third switch M3, the fifth switch M5 and the eighth switch M8 are turned on, the low-pass filter is connected to the circuit, and phase shifting is realized through switching of the high-low pass filter.
In the embodiment of the invention, the multi-phase-shifting state reflection type phase shifting structure is realized based on a short circuit branch array and consists of a Lange coupler Lan1, a matching network and a phase shifting network, wherein the phase shifting network consists of eight phase shifting modules, two symmetrical module parameters are the same, namely the eight phase shifting modules have four groups of parameters, and the matching network consists of a sixth capacitor C6 and a seventh capacitor C7. The input end of the Lange coupler Lan1 is connected with signal input, the isolation end is connected with signal output, the through end is connected with one end of a sixth capacitor C6, the coupling end is connected with one end of a seventh capacitor C7, the other end of the sixth capacitor C6 is connected with four phase shifting modules, and the other end of the seventh capacitor C7 is connected with another four phase shifting modules; the four phase shifting modules are respectively and synchronously combined with the other four phase shifting modules in pairs to form a group, wherein one group is opened and the other three groups are closed corresponding to one state, so that four states, namely a reference state and three phase shifting states, are obtained.
The working principle of the 11.25 ° +22.5 ° +33.75 ° phase shift unit and 45 ° +90 ° +135 ° phase shift unit implemented in this embodiment is described as follows: the multi-phase-shift state reflection type phase shift structure has 3 phase shift states, signals reflected by the direct end and the coupling end are synthesized and output at the isolation end, and a plurality of signals with phase frequency change slopes close to each other are output through switching, so that multi-phase-shift state constant phase shift in a broadband is completed.
In a further scheme of the embodiment, each phase shifting module is formed by connecting a switch and a microstrip transmission line, wherein the microstrip transmission line is grounded, the switch is connected with a sixth capacitor C6 or a seventh capacitor C7, the microstrip transmission line is used for designing phase shifting quantity of each state, and synchronization of one group of phase shifting modules is realized by corresponding switch control.
Referring to fig. 3, eight modules are described as: the first phase shifting module is formed by connecting a ninth switch M9 with a first microstrip transmission line TL1, wherein the first microstrip transmission line TL1 is grounded, and the ninth switch M9 is connected with a sixth capacitor C6; the second phase shifting module is formed by connecting a tenth switch M10 with a second microstrip transmission line TL2, wherein the second microstrip transmission line TL2 is grounded, and the tenth switch M10 is connected with a sixth capacitor C6; the third phase shifting module is formed by connecting an eleventh switch M11 with a third microstrip transmission line TL3, wherein the third microstrip transmission line TL3 is grounded, and the eleventh switch M11 is connected with a sixth capacitor C6; the fourth phase shift module is formed by connecting a twelfth switch M12 with the fourth microstrip transmission line TL4, wherein the fourth microstrip transmission line TL4 is grounded, and the twelfth switch M12 is connected to the sixth capacitor C6. The fifth phase shifting module is formed by connecting a thirteenth switch M13 with a fifth microstrip transmission line TL5, wherein the fifth microstrip transmission line TL5 is grounded, and the thirteenth switch M13 is connected with a seventh capacitor C7; the sixth phase shifting module is formed by connecting a fourteenth switch M14 with a sixth microstrip transmission line TL6, wherein the sixth microstrip transmission line TL6 is grounded, and the fourteenth switch M14 is connected with a seventh capacitor C7; the seventh phase shifting module is formed by connecting a fifteenth switch M15 with a seventh microstrip transmission line TL7, wherein the seventh microstrip transmission line TL7 is grounded, and the fifteenth switch M15 is connected with a seventh capacitor C7; the eighth phase shifting module is formed by connecting a sixteenth switch M16 with an eighth microstrip transmission line TL8, wherein the eighth microstrip transmission line TL8 is grounded, and the sixteenth switch M16 is connected with a seventh capacitor C7.
According to this structure, the ninth switch M9 and the thirteenth switch M13 are turned on, and the rest switches are all turned off in the reference state; the tenth switch M10 and the fourteenth switch M14 are turned on, and the rest switches are in a phase-shifting state I when all the switches are turned off; the eleventh switch M11 and the fifteenth switch M15 are turned on, and the other switches are in a phase-shifting state II when all the other switches are turned off; the twelfth switch M12 and the sixteenth switch M16 are turned on, and the rest switches are all turned off and are in a phase-shifting state III.
In this embodiment, the PHEMT tube is also used for each switch.
At this time, the other end of the sixth capacitor C6 is connected to the source of the ninth switch M9, the source of the tenth switch M10, the source of the eleventh switch M11, and the source of the twelfth switch M12, the drain of the ninth switch M9 is connected to one end of the first microstrip transmission line TL1, the other end of the first microstrip transmission line TL1 is grounded, the drain of the tenth PHEMT tube is connected to one end of the second microstrip transmission line TL2, the other end of the second microstrip transmission line TL2 is grounded, the drain of the eleventh PHEMT tube is connected to one end of the third microstrip transmission line TL3, the other end of the third microstrip transmission line TL3 is grounded, the drain of the twelfth PHEMT tube is connected to one end of the fourth microstrip transmission line TL4, and the other end of the fourth microstrip transmission line TL4 is grounded.
The other end of the seventh capacitor C7 is connected with the drain electrode of the thirteenth switch M13, the drain electrode of the fourteenth switch M14, the drain electrode of the fifteenth switch M15 and the drain electrode of the sixteenth switch M16, the source electrode of the thirteenth switch M14 is connected with one end of the fifth microstrip transmission line TL5, the other end of the fifth microstrip transmission line TL5 is grounded, the source electrode of the fourteenth switch M14 is connected with one end of the sixth microstrip transmission line TL6, the other end of the sixth microstrip transmission line TL6 is grounded, the drain electrode of the fifteenth switch M15 is connected with one end of the seventh microstrip transmission line TL7, the other end of the seventh microstrip transmission line TL7 is grounded, the drain electrode of the sixteenth switch M16 is connected with one end of the eighth microstrip transmission line TL8, and the other end of the eighth microstrip transmission line TL8 is grounded.
The working principle of the 11.25 ° +22.5 ° +33.75 ° phase shift unit and 45 ° +90 ° +135 ° phase shift unit implemented in this embodiment is described as follows: the multi-phase-shift reflective phase shift structure has various phase shift states, and adopts a phase shift state one+phase shift state two+phase shift state three-form naming except a reference state. The ninth switch M9 and the thirteenth switch M13 are turned on, and the rest switches are all turned off to be in a reference state; the tenth switch M10 and the fourteenth switch M14 are turned on, and the rest switches are in a phase-shifting state I when all the switches are turned off; the eleventh switch M11 and the fifteenth switch M15 are turned on, and the other switches are in a phase-shifting state II when all the other switches are turned off; the twelfth switch M12 and the sixteenth switch M16 are turned on, and the rest switches are all turned off and are in a phase-shifting state III. The signals reflected by the direct end and the coupling end are synthesized and output at the isolation end, and a plurality of signals with similar phase frequency change slopes are output through switching, so that the multi-phase-shift state constant phase shift in the broadband is completed. The multi-phase-shifting state reflection type phase-shifting structure capacitor is used for reflection matching, each short circuit branch is used for designing each state phase shifting amount, and specifically, in a 11.25 degrees+22.5 degrees+33.75 degrees phase shifting unit, the length/width dimensions of four sections of microstrip transmission lines corresponding to four states of a reference state, 11.25 degrees, 22.5 degrees and 33.75 degrees are respectively as follows: 1426/23, 1275/18, 1160/18, 1037/19; in the 45 degree+90 degree+135 degree phase shifting unit, the length/width dimensions of four sections of microstrip transmission lines corresponding to the reference state, the 45 degree, the 90 degree and the 135 degree state are respectively as follows: 1021/3, 609/3, 478/26, 113/30, all in μm, the design size can be made compact by folding the microstrip. The multi-phase-shift state reflection phase-shift structure has the same equivalent circuit structure in each phase shift state, and only microstrip line parameters and switch states change, so that the amplitude stability is good. The multi-phase shifting function is realized through a single unit, the phase superposition state (phase shifting state three) is designed to meet the phase stepping requirement of the multi-bit phase shifter after cascading, the occupied area is small compared with the traditional one-bit one-unit design, the chip cost can be saved, and meanwhile, the problem of error superposition caused by phase superposition of the traditional phase shifter is avoided.
In the invention, due to the unique phase shifting principle of the reflective phase shifter and the good broadband matching performance of the Lange coupler, a plurality of phase shifting states can be realized in a broadband by introducing short circuit branch nodes with different length and width parameters and forming a short circuit branch node array by the switch.
First, a principle will be described by taking an implementation of a phase shift state as an example.
Referring to fig. 4 and 5, assuming that all elements are lossless and the switch is ideal, the capacitance-induced impedance is jX C The short-circuit line portion introduces an impedance of jX L The reflection phase shift value and the reactance value of each part of the reflection network are as follows:
wherein:
X′ L ＝Z 1 tanβ·tl 1 (3)
X″ L ＝Z 2 tanβ·tl 2 (4)
z in 1 And tl 1 Is a short-circuit branch TL 1 Characteristic impedance and length; z is Z 2 And tl 2 Is a short-circuit branch TL 2 Characteristic impedance and length of (a); beta is the phase constant of the microstrip transmission line, affected by the operating frequency.
Referring to fig. 6, the reflection coefficient phases in the two states can maintain stable slope uniformity over a wide frequency range, i.e., have good broadband phase shift characteristics. By introducing short circuit branches with different parameters to form an array, various phase shift state switching can be realized, namely the formula (4) is changed into:
X″ L ＝Z i tanβ·tl i (5)
i=2, 3,4 … in formula (5). For the number of branches in the array, referring to fig. 7, on the premise of a certain working frequency band, the increase of the number of branches in the array can reduce the reflection coefficient modulus value, and the insertion loss and the port mismatch are caused, so that the number of branches in the structure cannot be infinitely increased, and the maximum bearable number of branches can be improved by reducing the working bandwidth.
In conclusion, by designing the length and width parameters of the microstrip transmission line in the short circuit branch array, various phase shifting state switching can be realized within a certain bandwidth. In the designed 10-16GHz MMIC phase shifter, in order to ensure that the phase shifting unit has good matching and insertion loss performance, through verification, at most 3 phase shifting states, namely an array consisting of 4 short circuit branches, can be designed. By integrating the multi-phase-shifting state reflection structure formed by the short circuit branch array into the 5-bit MMIC digital phase shifter, the wide bandwidth is realized, the number of phase shifter units is reduced, the error superposition problem during phase shifter cascading is relieved, the area is reduced, the insertion loss and the floating are small, and the port echo performance is good.
The invention adopts the cascade sequence of multi-phase-shifting reflection type, high-low pass type and multi-phase-shifting reflection type, fully utilizes the advantage of good broadband echo performance of the Lange coupler in reflection type phase-shifting topology, takes the multi-phase-shifting reflection type unit as the input and output units of the phase shifter, carries out surrounding design on the structure of the high-low pass type filter, optimizes the echo performance, ensures excellent system matching degree and good echo performance, and achieves the aim of optimizing the system performance.
The embodiments are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited by the embodiments, and any modification made on the basis of the technical scheme according to the technical idea of the present invention falls within the protection scope of the present invention.
Claims (10)
1. A broadband miniaturized 5-bit MMIC digital phase shifter adopting a short circuit branch array is characterized in that the phase shifter is formed by cascading a first phase shifting unit, a second phase shifting unit and a third phase shifting unit along the input to the output; or the third phase shifting unit, the second phase shifting unit and the first phase shifting unit are cascaded;
the second phase shifting unit adopts a high-low pass filter structure and has a reference state and a phase shifting state;
the first phase shifting unit and the third phase shifting unit are respectively provided with a reference state and three phase shifting states, and are respectively provided with a multi-phase shifting state reflection type phase shifting structure, the multi-phase shifting state reflection type phase shifting structure comprises a short circuit branch array, the short circuit branch array consists of eight microstrip transmission lines with one ends grounded, the short circuit branch array is symmetrical in pairs, the phase of a reflected signal is offset by designing length and width parameters of the short circuit branch array, and a specified phase difference is formed between the short circuit branch array and the reference state, so that phase shifting is realized.
2. The broadband miniaturized 5-bit MMIC digital phase shifter using a short circuit branch array according to claim 1, wherein the second phase shifting unit has a reference state and a 180 ° phase shifting state, and the first phase shifting unit has a reference state and three phase shifting states of 45 °, 90 °, 135 °; the third phase shifting unit has a reference state and three phase shifting states of 11.25 °, 22.5 °, 33.75 °.
3. The broadband miniaturized 5-bit MMIC digital phase shifter adopting the short-circuit branch array according to claim 1, wherein the second phase shifting unit adopts a five-order high-low pass filter structure, and comprises a high-pass filter network and a low-pass filter network, and the high-pass filter network comprises a first switch M1, a high-pass filter and a fourth switch M4 which are sequentially connected; the low-pass filter network comprises a fifth switch M5, a low-pass filter and an eighth switch M8 which are connected in sequence; the high-pass filter network and the low-pass filter network share a signal input end and a signal output end, the first switch M1 and the fourth switch M4 work synchronously and work asynchronously with the fifth switch M5 and the eighth switch M8, and phase shifting is realized through switching of the high-pass filter and the low-pass filter.
4. A broadband miniaturized 5-bit MMIC digital phase shifter using a short circuit stub array according to claim 3, wherein the high pass filter uses LC filtering, capacitor edge signal setting, and inductor grounding; the low-pass filter adopts LC filtering, an inductor is arranged along a signal, and a capacitor is grounded.
5. A broadband miniaturized 5-bit MMIC digital phase shifter using a short circuit stub array according to claim 3, wherein the high pass filter comprises a first capacitor C1, a second capacitor C2, a third capacitor C3, a first inductance L1 and a second inductance L2; the first capacitor C1, the second capacitor C2, and the third capacitor C3 are connected in series between the first switch M1 and the fourth switch M4, the first inductor L1 is grounded between the first capacitor C1 and the second capacitor C2, and the second inductor L2 is grounded between the second capacitor C2 and the third capacitor C3; the low-pass filter includes a third inductor L3, a fourth inductor L4, a fifth inductor L5, a fourth capacitor C4, and a fifth capacitor C5, wherein the third inductor L3, the fourth inductor L4, and the fifth inductor L5 are connected in series between the fifth switch M5 and the eighth switch M8, the fourth capacitor C4 is grounded between the third inductor L3 and the fourth inductor L4, and the fifth capacitor C5 is grounded between the fourth inductor L4 and the fifth inductor L5.
6. A broadband miniaturized 5-bit MMIC digital phase shifter using a short circuit stub array according to claim 3, wherein the high pass filter network further comprises a second switch M2 and a third switch M3, and the low pass filter network further comprises a sixth switch M6 and a seventh switch M7; the second switch M2 is connected between the first switch M1 and the high pass filter, the third switch M3 is connected between the high pass filter and the fourth switch M4, the sixth switch M6 is connected between the fifth switch M5 and the low pass filter, and the seventh switch M7 is connected between the low pass filter and the eighth switch M8; the second switch M2, the third switch M3 and the first switch M1 operate synchronously, and the sixth switch M6, the seventh switch M7 and the eighth switch M8 operate synchronously.
7. The broadband miniaturized 5-bit MMIC digital phase shifter adopting the short circuit branch array according to claim 3,4, 5 or 6, wherein the multi-phase-shifting state reflection type phase shifting structure is composed of a Lange coupler Lan1, a matching network and a phase shifting network, and the phase shifting network is composed of eight phase shifting modules with different parameters; the matching network is a sixth capacitor C6 and a seventh capacitor C7; the input end of the Lange coupler Lan1 is connected with signal input, the isolation end is connected with signal output, the through end is connected with one end of a sixth capacitor C6, the coupling end is connected with one end of a seventh capacitor C7, the other end of the sixth capacitor C6 is connected with four phase shifting modules, and the other end of the seventh capacitor C7 is connected with another four phase shifting modules; the four phase shifting modules are respectively and synchronously combined with the other four phase shifting modules in pairs to form a group, one group is opened and the other three groups are closed corresponding to one state, so that four states, namely a reference state and three phase shifting states, are obtained.
8. The broadband miniaturized 5-bit MMIC digital phase shifter adopting the short circuit branch array according to claim 7, wherein each phase shifting module is formed by connecting a switch and a microstrip transmission line, the microstrip transmission line is grounded, the switch is connected with a sixth capacitor C6 or a seventh capacitor C7, the synchronization of one group of phase shifting modules is realized by corresponding switch control, the microstrip transmission line is used for phase shifting quantity design of each state, and different parameters of each phase shifting module refer to different parameters of the microstrip transmission line.
9. The broadband miniaturized 5-bit MMIC digital phase shifter using a shorting stub array of claim 7, wherein each switch uses PHEMT tubes.
10. The broadband miniaturized 5-bit MMIC digital phase shifter using the short-circuit stub array according to claim 1, wherein the broadband miniaturized five-bit digital phase shifter realizes 32-bit phase shift state switching in a range of 0 to 360 ° with 11.25 ° as a phase stepping value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311038388.XA CN117081544A (en) | 2023-08-17 | 2023-08-17 | Broadband miniaturized 5-bit MMIC digital phase shifter adopting short circuit branch array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311038388.XA CN117081544A (en) | 2023-08-17 | 2023-08-17 | Broadband miniaturized 5-bit MMIC digital phase shifter adopting short circuit branch array |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117081544A true CN117081544A (en) | 2023-11-17 |
Family
ID=88705545
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311038388.XA Pending CN117081544A (en) | 2023-08-17 | 2023-08-17 | Broadband miniaturized 5-bit MMIC digital phase shifter adopting short circuit branch array |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117081544A (en) |
-
2023
- 2023-08-17 CN CN202311038388.XA patent/CN117081544A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111082765B (en) | Ultra-wideband two-position phase shifter | |
| WO2021098195A1 (en) | High-frequency switch-type phase shifter | |
| WO2017080263A1 (en) | Ultra-wideband digital phase shifter | |
| CN110957987A (en) | Ultra-wideband adjustable phase-shifting unit loaded with sector line reflection load and phase shifter | |
| CN112688664A (en) | Broadband six-bit MMIC numerical control phase shifter | |
| CN110994102B (en) | Power divider with reconfigurable distribution path number and distribution ratio | |
| CN210839500U (en) | Ultra-wideband adjustable phase-shifting unit loaded with sector line reflection load | |
| CN115566379A (en) | Ultra-wideband digital phase shifter covering K and Ka wave bands | |
| CN111130488A (en) | Ultra-wideband phase-shifting circuit | |
| CN117081544A (en) | Broadband miniaturized 5-bit MMIC digital phase shifter adopting short circuit branch array | |
| CN115967369A (en) | Ultra-wideband phase shifter based on band-pass filter network | |
| CN114499456B (en) | Broadband orthogonal signal generator based on two-stage hybrid | |
| CN113949361A (en) | Ultra-wideband phase-shifting circuit | |
| CN112271419B (en) | Ultra-wideband digital phase shifter with all-pass filter structure | |
| CN113922014B (en) | Reconfigurable filtering phase shifter | |
| Tan et al. | Tunable couplers: An overview of recently developed couplers with tunable functions | |
| CN111555002B (en) | High-frequency reflection-type phase shifter | |
| US20230006327A1 (en) | Reconfigurable quadrature coupler | |
| CN114499454A (en) | Silicon-based millimeter wave differential reflection type phase shifter with novel structure | |
| CN2468247Y (en) | Multiplex sound interval gallium arsenide (GaAS) microwave single-chip integrated vector modulator | |
| KR100366299B1 (en) | Analog Phase Shifter Using Hybrid Coupler and Varactor Diode Circuit | |
| CN116260422A (en) | Ultra wideband 6-bit MMIC phase shifter | |
| CN117277990B (en) | Miniaturized low-loss ultra-wideband phase-inversion phase shifter | |
| CN219227572U (en) | Six-bit numerical control phase shifter | |
| CN115149234B (en) | Transmission line structure and transmission line design method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |