CN116260422A - Ultra wideband 6-bit MMIC phase shifter - Google Patents
Ultra wideband 6-bit MMIC phase shifter Download PDFInfo
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Abstract
The invention discloses an ultra wideband 6-bit MMIC phase shifter, which comprises a 5.625-degree phase shifting circuit, a 22.5-degree phase shifting circuit, an 11.25-degree phase shifting circuit, a 45-degree phase shifting circuit, a 180-degree phase shifting circuit and a 90-degree phase shifting circuit which are sequentially cascaded; or comprises a 5.625-degree phase-shifting circuit, a 22.5-degree phase-shifting circuit, an 11.25-degree phase-shifting circuit, a 90-degree phase-shifting circuit, a 180-degree phase-shifting circuit and a 45-degree phase-shifting circuit which are sequentially cascaded. The 45 DEG and 90 DEG phase shifting unit adopts a reflection phase shifting topology based on short circuit branch joints, so that a wider bandwidth is realized, few devices are used in design, the design is simple, and meanwhile, the cascading sequence is optimized, so that the performance achieves better echo and matching performance in a limited arrangement sequence.
Description
Technical Field
The invention belongs to the technical field of phase shifters, and relates to an ultra wideband 6-bit MMIC (monolithic microwave integrated circuit) phase shifter which can be applied to the aspects of phased array radar, mobile communication, digital microwave communication, instruments and meters, intelligent antenna systems and the like.
Background
Modern radar technology is evolving towards ultra-wideband, fast antenna scanning, transmitting multiple beams, multi-target tracking and powerful data processing systems, thus promoting the advent of phased array systems. The phased array system is used in a communication system, so that the system capacity and the data transmission efficiency can be improved, more targets can be accurately tracked and azimuth information can be accurately obtained, and the maximum acting distance of the radar can be improved due to large bandwidth and high power capacity. Phased array systems are composed of a large number of independently operated transmit/receive (T/R) elements, so the T/R elements must be small, highly integrated, lightweight, and reliable. The phase shifter is used as a core component of the T/R assembly, and the performance of the phase shifter directly influences the searching capability of the phased array system on targets, so that the phase shifter has very important significance for the research of ultra-wideband and high-performance phase shifters.
The existing digital phase shifters such as CN201010555904.2 adopt a mode of cascading according to the phase shift amount in sequence, namely 180 degrees+90 degrees+45 degrees+22.5 degrees+11.25 degrees+5.625 degrees, and although the digital phase shifters are beneficial to direct current arrangement, good echo and matching performance is difficult to realize, and there is room for improvement in performance.
The existing MMIC phase shifter circuit for realizing large phase shifting quantity mainly comprises a high-low pass filter mode and a reflection mode. The high-low pass filter type can realize large phase shift quantity, such as CN109194303A, but because the high-low pass filter is a narrow band, the port matching and the phase shift precision improvement can only be realized by increasing the order of the filter when the ultra-wideband design is carried out, so that the number of circuit elements is increased. The Lange coupler has the characteristic of wide-band 90-degree flat phase shift, so that the design of large phase shift quantity is easy to realize in the wide band based on the reflection of the coupler, the design size of the Lange coupler can be rapidly reduced along with the increase of the application frequency, and the Lange coupler has good application prospect. In patent document CN102148416a, a large number of reflection structures are used for ultra-wideband design, but the reflection structure is complex, the number of elements is large, and the cell design and miniaturization are not facilitated.
Disclosure of Invention
In order to overcome the defects of the prior art and solve the problem that miniaturization is difficult to realize, the invention aims to provide an ultra wideband 6-bit MMIC phase shifter, wherein 45 DEG and 90 DEG phase shifting units of the phase shifter adopt a reflection phase shifting topology based on short circuit branches, so that wider bandwidth is realized, few devices are used in design, the design is simple, and meanwhile, the cascade sequence is optimized, so that better echo and matching performance can be achieved in a limited arrangement sequence.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
an ultra-wideband 6-bit MMIC phase shifter comprises a 5.625-degree phase shifting circuit, a 22.5-degree phase shifting circuit, an 11.25-degree phase shifting circuit, a 45-degree phase shifting circuit, a 180-degree phase shifting circuit and a 90-degree phase shifting circuit which are sequentially cascaded; or comprises a 5.625-degree phase-shifting circuit, a 22.5-degree phase-shifting circuit, an 11.25-degree phase-shifting circuit, a 90-degree phase-shifting circuit, a 180-degree phase-shifting circuit and a 45-degree phase-shifting circuit which are sequentially cascaded.
The ultra-wideband 6-bit MMIC phase shifter disclosed by the invention works in the frequency band of 6-18 GHz.
In one embodiment, the 5.625 ° phase-shifting circuit adopts a switch LC structure, the 11.25 ° phase-shifting circuit adopts an embedded switch structure, the 22.5 ° phase-shifting circuit adopts an embedded switch structure with capacitance compensation, and the 180 ° phase-shifting circuit adopts a T-junction-Lange coupler structure.
In one embodiment, the 45 ° phase shift circuit and the 90 ° phase shift circuit each adopt a reflection type structure based on a short circuit branch.
Compared with the prior art, the invention has the beneficial effects that:
1. the reflection type structure design based on the short circuit branch is simple and compact, the number of adopted elements is small, the performance is stable, the phase change is realized through the parameter change of the transmission line, and the lumped element in the phase shift network of the conventional reflection type phase shifter is omitted.
2. According to the invention, a sequential cascading mode is not adopted any more, and the units with excellent echo performance are selected and placed at the input end and the output end of the phase shifter, so that the energy reflection of the system is reduced, the neutralization effect of the echo performance is fully utilized, the reflection type structural units with better echo performance are placed at two sides of the phase shifting units with poorer echo performance, the matching degree is improved, the overall echo performance of the phase shifter is improved, and meanwhile, the deterioration of the phase shifting precision caused by the cascading of the units is relieved.
Drawings
Fig. 1 is a functional block diagram of the present invention.
Fig. 2 is a schematic diagram of a 5.625 deg. phase shifting circuit according to the present invention.
Fig. 3 is a schematic diagram of a reflective structure circuit based on a short-circuit branch of the present invention.
Fig. 4 is a schematic diagram of an 11.25 ° phase shift circuit according to the present invention.
Fig. 5 is a schematic diagram of a 22.5 ° phase shift circuit according to the present invention.
Fig. 6 is a schematic diagram of a 180 deg. phase shifting circuit of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the following examples in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Referring to fig. 1, the invention is an ultra wideband 6-bit MMIC phase shifter, comprising a 5.625 ° phase shifter, a 22.5 ° phase shifter, a 11.25 ° phase shifter, a 45 ° phase shifter, a 180 ° phase shifter and a 90 ° phase shifter, which are sequentially cascaded, wherein the 45 ° phase shifter and the 90 ° phase shifter can exchange positions, i.e., the 5.625 ° phase shifter, the 22.5 ° phase shifter, the 11.25 ° phase shifter, the 90 ° phase shifter, the 180 ° phase shifter and the 45 ° phase shifter are sequentially cascaded. In other words, the cascading order of the ultra wideband 6-bit MMIC phase shifters of the present invention may be 5.625 +22.5 +11.25 +45 +180 +90, or 5.625 +22.5 +11.25 +90 +180 +45.
It will be readily understood that the present invention may be composed of only the above-described phase shift circuits, without including other elements.
The ultra-wideband 6-bit MMIC phase shifter works in the frequency band of 6-18 GHz, and the digital phase shifting stepping value is 5.625 degrees, so 64 phase shifting state switching can be realized in the range of 0-360 degrees.
The cascade sequence designed by the invention fully considers the echo neutralization effect among units and the cascade fusion degree of different units, and can improve the whole echo performance of the phase shifter and relieve the deterioration of the phase shifting precision caused by cascade. According to the invention, each phase shifting unit circuit is designed independently, and after each unit circuit is designed, a cascading sequence of 5.625 degrees+22.5 degrees+11.25 degrees+45 degrees+180 degrees+90 degrees or 5.625 degrees+22.5 degrees+11.25 degrees+90 degrees+180 degrees+45 degrees is adopted to realize the ultra-wideband six-bit MMIC digital phase shifter.
In one embodiment of the present invention, the 5.625 ° phase shift circuit adopts a switch LC structure, and referring to fig. 2, a specific circuit of the switch LC structure is provided, which includes a first fet M1, a second fet M2, a first inductor L1, and a first capacitor C1. The first inductor L1 is connected between the source electrode and the drain electrode of the first field effect tube M1, the first capacitor C1 is connected between the source electrode and the drain electrode of the second field effect tube M2, the common end of the source electrode of the first field effect tube M1 and the first inductor L1 is connected with the signal input end of the circuit, the common end of the drain electrode of the first field effect tube M1 and the first inductor L1 is connected with the common end of the source electrode of the second field effect tube M2 and the first capacitor C1, and the common end of the drain electrode of the second field effect tube M2 and the first capacitor C1 is connected with the signal output end of the circuit. In the embodiments of the invention, a GaAs PHEMT type gallium arsenide pseudomodulation doped heterojunction field effect transistor is used as a switch, which is equivalent to a very small on-resistance when turned on and a very small isolation capacitor when turned off. Other switching transistors such as field effect transistors may also meet the requirements of the present invention.
The working principle of a switch LC circuit adopted for realizing 5.625 DEG phase shift in the invention is described as follows: the switch M1 and the switch M2 work asynchronously, namely the switch M2 is closed when the switch M1 is opened, the switch M1 is closed when the switch M2 is opened, different signal paths are switched by loading voltage to realize phase movement, the phase shift state and the reference state of the corresponding unit are respectively corresponding, and the two states can be interchanged. The capacitor has the function of phase lifting, the inductor has the function of phase lag, when the M1 is conducted and the M2 is cut off, the circuit is equivalent to a small on-state resistor connected in series with the capacitor, when the M1 is cut off and the M2 is conducted, the circuit is equivalent to a small on-state resistor connected in series with the inductor, and phase shifting is realized through different functions of the capacitor inductor on the phase.
In one embodiment of the present invention, the 45 ° phase shift circuit and the 90 ° phase shift circuit both adopt a reflection type structure based on a short-circuit branch, and referring to fig. 3, a specific circuit of the reflection type structure based on a short-circuit branch is provided, which includes a first Lange coupler Lan1, a third field effect transistor M3, a fourth field effect transistor M4, a first transmission line TL1, a second transmission line TL2, a third transmission line TL3, a fourth transmission line TL4, a second capacitor C2, and a third capacitor C3. The source electrode of the third field effect tube M3 is connected with the straight-through end of the first Lange coupler Lan1 through the second capacitor C2, the drain electrode of the third field effect tube M3 is grounded through the second transmission line TL2, the source electrode of the fourth field effect tube M4 is connected with the coupling end of the Lange coupler Lan1 through the third capacitor C3, the drain electrode of the fourth field effect tube M4 is grounded through the fourth transmission line TL4, the common end of the third field effect tube M3 and the second capacitor C2 is connected with the first transmission line TL1, the common end of the fourth field effect tube M4 and the third capacitor C3 is connected with the third transmission line TL3, the input end of the Lange coupler Lan1 is connected and input, and the isolation end is connected and output.
The working principle of the reflection type phase shifting circuit for realizing 45 DEG and 90 DEG phase shifting by adopting the short circuit branch is described as follows: the switch M3 and the switch M4 in the circuit work synchronously, namely the switch M3 and the switch M4 are switched together, and the reference state and the phase-shifting state of the corresponding unit can be interchanged. The signal enters through the Lan1 input end and is divided into two branches of a direct end and a coupling end. When the switches M3 and M4 are cut off, the through-end signal passes through the capacitor C2, the transmission line TL1 performs signal reflection, and the coupling-end signal passes through the capacitor C3, and the transmission line TL3 performs signal reflection; when the switches M3 and M4 are turned on, the through-side signal is reflected by the capacitor C2, the transmission line TL1, and the transmission line TL2, and the coupling-side signal is reflected by the capacitor C3, the transmission line TL3, and the transmission line TL 4. The signals reflected by the direct end and the coupling end are synthesized and output at the isolation end, and two signals with two phase frequency change slopes close to each other are output through switching, so that constant phase shifting in the broadband is completed. The reflection phase shift structure is suitable for the design of a broadband large phase shift unit, has fewer components and simple structure, and has the design key that the reflection network design of a direct end and a coupling end is opposite toIn the reflection network of the invention, the reactance value introduced by the capacitor is set to be 1/jωC, so that the reactance value is equal to Z C Short-circuit line introducing reactance Z L The total resistive loss is R, and the network reflection coefficient can be obtained as follows:
reflection coefficient phase angle:
wherein when Z is C ＝Z L When series resonance is generated, the angle Γ=0°, and according to the characteristics of an arctangent function, the theoretical reflection phase Γ of the designed network is epsilon (-90 °,90 °). When the switch is switched, the variable of the reflection network is mainly the reactance value Z introduced by the transmission line L Namely, the change of the reflection phase is realized through the change of the transmission line, and the capacitance also has an influence on the reflection coefficient phase angle, but is not used as a variable and is mainly used for port reflection matching. The design depends on the Lange coupler to realize good echo matching performance in a broadband, so that the Lange coupler is placed at the output end of the phase shifter to improve the echo performance of the phase shifter, and the 180-degree phase shifting unit is surrounded and arranged to neutralize and optimize the echo performance.
In one embodiment of the present invention, the 11.25 ° phase shift circuit adopts an embedded switch structure, and referring to fig. 4, a specific circuit of the embedded switch structure is provided, which includes a fifth fet M5, a sixth fet M6, a seventh fet M7, a fifth transmission line TL5, a sixth transmission line TL6, and a second inductor L2. The source electrode of the fifth field effect transistor M5 is connected with one end of the fifth transmission line TL5, the other end of the fifth transmission line TL5 is connected with one end of the sixth transmission line TL6, the other end of the sixth transmission line TL6 is connected with the drain electrode of the fifth field effect transistor M5, the public end of the fifth transmission line TL5 and the sixth transmission line TL6 is connected with the drain electrode of the sixth field effect transistor M6, the second inductor L2 is connected between the source electrode and the drain electrode of the seventh field effect transistor M7, the public end of the source electrode of the seventh field effect transistor M7 and the second inductor L2 is grounded, the drain electrode of the seventh field effect transistor M7 and the public end of the second inductor L2 are connected with the source electrode of the sixth field effect transistor M6, the source electrode of the fifth field effect transistor M5 and the public end of the fifth transmission line TL5 are connected with the signal input end of the circuit, and the drain electrode of the fifth field effect transistor M5 and the public end of the sixth transmission line TL6 are connected with the signal output end of the circuit.
In one embodiment of the present invention, the 22.5 ° phase shift circuit employs an embedded switch structure with capacitance compensation, and a specific circuit of the embedded switch structure with capacitance compensation is shown with reference to fig. 5, that is, a capacitor C4 is connected between the source and the drain of the switch M9 in the middle based on the topology of fig. 4, and the rest is unchanged. Specifically, it includes an eighth field effect transistor M8, a ninth field effect transistor M9, a tenth field effect transistor M10, a seventh transmission line TL7, an eighth transmission line TL8, a third inductance L3, and a fourth capacitance C4; the source electrode of the eighth field effect transistor M8 is connected with one end of the seventh transmission line TL7, the other end of the seventh transmission line TL7 is connected with one end of the eighth transmission line TL8, the other end of the eighth transmission line TL8 is connected with the drain electrode of the eighth field effect transistor M8, the common end of the seventh transmission line TL7 and the eighth transmission line TL8 is connected with the drain electrode of the ninth field effect transistor M9, the fourth capacitor C4 is connected between the source electrode and the drain electrode of the ninth field effect transistor M9, the third inductor L3 is connected between the source electrode and the drain electrode of the tenth field effect transistor M10, the common end of the source electrode of the tenth field effect transistor M10 and the third inductor L3 is grounded, the common end of the drain electrode of the tenth field effect transistor M10 and the common end of the third inductor L3 are connected with the source electrode of the eighth field effect transistor M9 and the common end of the fourth capacitor C4, the source electrode of the eighth field effect transistor M8 and the common end of the seventh transmission line TL7 are connected with the signal input end of a circuit, and the drain electrode of the eighth field effect transistor M8 and the signal output end of the common end of the eighth transmission line TL8 are connected with a circuit.
The working principle of the embedded switch topology for realizing 11.25 DEG and 22.5 DEG phase shift by adopting embedded switch topology and capacitance compensation in the invention is described as follows: taking the 11.25 ° phase shift circuit of fig. 4 as an example, the switches M6 and M7 operate asynchronously and operate synchronously with the switch M5. When the switch M7 is required to be turned off, the equivalent turn-off capacitor and the inductor L2 generate parallel resonance, when the switch M5 and the switch M6 are turned on, the signal is output through the on-resistance, when the switch M5 and the switch M6 are turned off, and when the switch M7 is turned on, the signal passes through a low-pass network consisting of three parts of the transmission line TL5, the parallel switch M6 turn-off capacitor and the transmission line TL6, and for 22.5 degrees, the signal forms phase shift by the low-pass network consisting of the transmission line TL7, the parallel switch M9 turn-off capacitor, the compensation capacitor C4 and the transmission line TL 8. The compensation capacitance is increased by 22.5 degrees because the design phase shift amount is increased compared with the design phase shift amount required by 11.25 degrees units, and the three-element low-pass network can not meet the requirement in a wider frequency band, so that the compensation capacitance is added to increase the order. The 11.25 DEG and 22.5 DEG unit topology is similar in the cascade design, the ninth field effect transistor M9 and the tenth field effect transistor M10 work asynchronously, and work synchronously with the eighth field effect transistor M8, the phase shift amount is similar, and the cascade fusion degree is high, so that the ninth field effect transistor M9 and the tenth field effect transistor M10 are placed together in the cascade design.
In one embodiment of the present invention, the 180 ° phase shift circuit adopts a T-junction-Lange coupler structure, and referring to fig. 6, a specific circuit of the T-junction-Lange coupler structure is provided, which includes a second Lange coupler Lan2, an eleventh fet M11, a twelfth fet M12, a thirteenth fet M13, a fourteenth fet M14, a fifteenth fet M15, a sixteenth fet M16, a ninth transmission line TL9, a tenth transmission line TL10, and an eleventh transmission line TL11. The source electrode of the fifteenth field effect tube M15 is grounded, the drain electrode of the fifteenth field effect tube M15 is connected with the source electrode of the thirteenth field effect tube M15, the source electrode of the eleventh field effect tube M11 is connected with the source electrode of the thirteenth field effect tube M13 and the common end of the drain electrode of the fifteenth field effect tube M15, the drain electrode of the eleventh field effect tube M11 is connected with the input end of a second Lange coupler Lan2, the direct end and the coupling end of the second Lange coupler Lan2 are grounded, the isolation end is connected with the source electrode of the twelfth field effect tube M12, the source electrode of the sixteenth field effect tube M16 is connected with the drain electrode of the fourteenth field effect tube M14, the drain electrode of the sixteenth field effect tube M16 is grounded, the common end of the source electrode of the sixteenth field effect tube M16 and the drain electrode of the fourteenth field effect tube M14 is connected with the drain electrode of the twelfth field effect tube M12, the source electrode of the fourteenth field effect transistor M14 is connected with one end of a tenth transmission line TL10, the other end of the tenth transmission line TL10 is connected with one end of a ninth transmission line TL9, the other end of the ninth transmission line TL9 is connected with the drain electrode of a thirteenth field effect transistor M13, the common end of the tenth transmission line TL10 and the ninth transmission line TL9 is connected with one end of an eleventh transmission line TL11, the other end of the eleventh transmission line TL11 is grounded, the common ends of the source electrodes of the eleventh field effect transistor M11, the thirteenth field effect transistor M13 and the fifteenth field effect transistor M15 are connected with the signal input end of a circuit, and the common ends of the source electrodes of the twelfth field effect transistor M12, the fourteenth field effect transistor M14 and the sixteenth field effect transistor M16 are connected with the signal output end of the circuit.
The working principle of adopting the T-junction-Lange coupler structure for realizing 180 DEG phase shift in the invention is as follows: the switch M11 operates synchronously with the M12, M15, M16, and asynchronously with the switches M13, M14. When the switches M11, M12, M15 and M16 are on and the switches M13 and M14 are off, signals are output through the input end of the LAN2, reflected and output at the isolating end of the Lan2, and finally the signals are output through the output end of the unit; when the switches M11, M12, M15 and M16 are turned off and the switches M13 and M14 are turned on, signals pass through the T-shaped microstrip branch and are finally output through the unit output end. The LAN2 line can be equivalent to a band-pass, has a phase lifting effect, the T-shaped junction can be equivalent to a low-pass, has a phase hysteresis effect, and has resonance phenomenon in a working frequency band when the switches M13 and M14 are cut off due to insufficient switch isolation in the process, so that the isolation is enhanced by adding the grounding switches M15 and M16. The unit design phase shift amount is larger, and good phase shift precision and echo performance are difficult to be considered in an ultra-wideband range, so that when in cascade design, two phase shift units based on reflection topology design of a short circuit branch are adopted for surrounding design, and the purpose of neutralizing and optimizing system performance is achieved.
The digital phase shifter adopting the embodiment has the advantages of simple design, less elements, good performance and easy realization of miniaturization by adopting the reflection phase shifting unit based on the short circuit branch, and simultaneously, the cascade sequence is selected according to the characteristics of each unit, so that the echo matching performance of the phase shifter is good.
The embodiments are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited by the embodiments, and any modification made on the basis of the technical scheme according to the technical idea of the present invention falls within the protection scope of the present invention.
Claims (10)
1. An ultra-wideband 6-bit MMIC phase shifter is characterized by comprising a 5.625-degree phase shifting circuit, a 22.5-degree phase shifting circuit, an 11.25-degree phase shifting circuit, a 45-degree phase shifting circuit, a 180-degree phase shifting circuit and a 90-degree phase shifting circuit which are sequentially cascaded; or comprises a 5.625-degree phase-shifting circuit, a 22.5-degree phase-shifting circuit, an 11.25-degree phase-shifting circuit, a 90-degree phase-shifting circuit, a 180-degree phase-shifting circuit and a 45-degree phase-shifting circuit which are sequentially cascaded.
2. The ultra wideband 6-bit MMIC phase shifter of claim 1, wherein the 5.625 ° phase shift circuit employs a switched LC structure, the 11.25 ° phase shift circuit employs an embedded switch structure, the 22.5 ° phase shift circuit employs an embedded switch structure with capacitance compensation, and the 180 ° phase shift circuit employs a T-junction-Lange coupler structure.
3. The ultra wideband 6-bit MMIC phase shifter of claim 2, wherein the switching LC structure comprises a first fet M1, a second fet M2, a first inductor L1 and a first capacitor C1; the first field effect transistor M1 and the second field effect transistor M2 work asynchronously; the first inductor L1 is connected between the source electrode and the drain electrode of the first field effect transistor M1, the first capacitor C1 is connected between the source electrode and the drain electrode of the second field effect transistor M2, the common end of the source electrode of the first field effect transistor M1 and the first inductor L1 is connected with the signal input end of the circuit, the common end of the drain electrode of the first field effect transistor M1 and the first inductor L1 is connected with the common end of the source electrode of the second field effect transistor M2 and the first capacitor C1, and the common end of the drain electrode of the second field effect transistor M2 and the first capacitor C1 is connected with the signal output end of the circuit.
4. The ultra wideband 6-bit MMIC phase shifter of claim 2, wherein the embedded switch structure comprises a fifth fet M5, a sixth fet M6, a seventh fet M7, a fifth transmission line TL5, a sixth transmission line TL6, and a second inductor L2; the sixth field effect transistor M6 and the seventh field effect transistor M7 work asynchronously and work synchronously with the fifth field effect transistor M5; the source electrode of the fifth field effect transistor M5 is connected with one end of the fifth transmission line TL5, the other end of the fifth transmission line TL5 is connected with one end of the sixth transmission line TL6, the other end of the sixth transmission line TL6 is connected with the drain electrode of the fifth field effect transistor M5, the public end of the fifth transmission line TL5 and the sixth transmission line TL6 is connected with the drain electrode of the sixth field effect transistor M6, the second inductor L2 is connected between the source electrode and the drain electrode of the seventh field effect transistor M7, the public end of the source electrode of the seventh field effect transistor M7 and the second inductor L2 is grounded, the drain electrode of the seventh field effect transistor M7 and the public end of the second inductor L2 are connected with the source electrode of the sixth field effect transistor M6, the source electrode of the fifth field effect transistor M5 and the public end of the fifth transmission line TL5 are connected with the signal input end of the circuit, and the drain electrode of the fifth field effect transistor M5 and the public end of the sixth transmission line TL6 are connected with the signal output end of the circuit.
5. The ultra wideband 6-bit MMIC phase shifter of claim 2, wherein the embedded switch structure with capacitance compensation comprises an eighth fet M8, a ninth fet M9, a tenth fet M10, a seventh transmission line TL7, an eighth transmission line TL8, a third inductor L3, and a fourth capacitor C4; the ninth fet M9 and the tenth fet M10 operate asynchronously and operate synchronously with the eighth fet M8; the source electrode of the eighth field effect transistor M8 is connected to one end of the seventh transmission line TL7, the other end of the seventh transmission line TL7 is connected to one end of the eighth transmission line TL8, the other end of the eighth transmission line TL8 is connected to the drain electrode of the eighth field effect transistor M8, the common ends of the seventh transmission line TL7 and the eighth transmission line TL8 are connected to the drain electrode of the ninth field effect transistor M9, the fourth capacitor C4 is connected between the source electrode and the drain electrode of the ninth field effect transistor M9, the third inductor L3 is connected between the source electrode and the drain electrode of the tenth field effect transistor M10, the common ends of the source electrode of the tenth field effect transistor M10 and the third inductor L3 are grounded, the source electrode of the eighth field effect transistor M9 and the common end of the fourth capacitor C4 are connected, the source electrode of the eighth field effect transistor M8 and the common end of the seventh transmission line TL7 are connected to the signal input end of the circuit, and the drain electrode of the eighth field effect transistor M8 and the signal output end of the common end of the eighth transmission line TL8 are connected to the circuit.
6. The ultra wideband 6-bit MMIC phase shifter of claim 2, wherein the T-junction-Lange coupler structure comprises a second Lange coupler Lan2, an eleventh fet M11, a twelfth fet M12, a thirteenth fet M13, a fourteenth fet M14, a fifteenth fet M15, a sixteenth fet M16, a ninth transmission line TL9, a tenth transmission line TL10, and an eleventh transmission line TL11; the eleventh field effect transistor M11 and the twelfth field effect transistor M12, the fifteenth field effect transistor M15, and the sixteenth field effect transistor M16 operate synchronously, and operate asynchronously with the thirteenth field effect transistor M13 and the fourteenth field effect transistor M14; the source electrode of the fifteenth field effect tube M15 is grounded, the drain electrode of the fifteenth field effect tube M15 is connected with the source electrode of the thirteenth field effect tube M15, the source electrode of the eleventh field effect tube M11 is connected with the common end of the source electrode of the thirteenth field effect tube M13 and the drain electrode of the fifteenth field effect tube M15, the drain electrode of the eleventh field effect tube M11 is connected with the input end of a second Lane coupler Lan2, the direct end and the coupling end of the second Lane coupler Lan2 are grounded, the isolation end is connected with the source electrode of the twelfth field effect tube M12, the source electrode of the sixteenth field effect tube M16 is connected with the drain electrode of the fourteenth field effect tube M14, the drain electrode of the sixteenth field effect tube M16 is grounded, the common end of the source electrode of the sixteenth field effect tube M16 and the drain electrode of the fourteenth field effect tube M14 is connected with the drain electrode of the twelfth field effect tube M12, the source electrode of the fourteenth field effect transistor M14 is connected with one end of a tenth transmission line TL10, the other end of the tenth transmission line TL10 is connected with one end of a ninth transmission line TL9, the other end of the ninth transmission line TL9 is connected with the drain electrode of a thirteenth field effect transistor M13, the common end of the tenth transmission line TL10 and the ninth transmission line TL9 is connected with one end of an eleventh transmission line TL11, the other end of the eleventh transmission line TL11 is grounded, the common ends of the source electrodes of the eleventh field effect transistor M11, the thirteenth field effect transistor M13 and the fifteenth field effect transistor M15 are connected with the signal input end of a circuit, and the common ends of the source electrodes of the twelfth field effect transistor M12, the fourteenth field effect transistor M14 and the sixteenth field effect transistor M16 are connected with the signal output end of the circuit.
7. The ultra wideband 6-bit MMIC phase shifter of any one of claims 1 to 6, wherein the 45 ° phase shifter and the 90 ° phase shifter each employ a reflection type structure based on a short-circuit stub.
8. The ultra wideband 6-bit MMIC phase shifter of claim 7, wherein the short leg-based reflective structure comprises a first Lange coupler Lan1, a third fet M3, a fourth fet M4, a first transmission line TL1, a second transmission line TL2, a third transmission line TL3, a fourth transmission line TL4, a second capacitor C2, and a third capacitor C3; the third field effect transistor M3 and the fourth field effect transistor M4 work synchronously; the source electrode of the third field effect tube M3 is connected with the straight-through end of the first Lange coupler Lan1 through the second capacitor C2, the drain electrode of the third field effect tube M3 is grounded through the second transmission line TL2, the source electrode of the fourth field effect tube M4 is connected with the coupling end of the Lange coupler Lan1 through the third capacitor C3, the drain electrode of the fourth field effect tube M4 is grounded through the fourth transmission line TL4, the public end of the third field effect tube M3 and the second capacitor C2 is connected with the first transmission line TL1, the public end of the fourth field effect tube M4 and the third capacitor C3 is connected with the third transmission line TL3, the input end of the Lange coupler Lan1 is connected and input, and the isolation end is connected and output.
9. The ultra-wideband 6-bit MMIC phase shifter of claim 8, wherein the ultra-wideband 6-bit MMIC phase shifter operates in the 6-18 GHz band.
10. The ultra wideband 6-bit MMIC phase shifter of claim 1, wherein the field effect transistor is a PHEMT tube.
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| CN202310249578.XA CN116260422A (en) | 2023-03-15 | 2023-03-15 | Ultra wideband 6-bit MMIC phase shifter |
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| CN202310249578.XA CN116260422A (en) | 2023-03-15 | 2023-03-15 | Ultra wideband 6-bit MMIC phase shifter |
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