CN117080236A - 一种能够控制出光角度的Micro led芯片制备方法 - Google Patents
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Abstract
本发明涉及一种能够控制出光角度的Micro led芯片制备方法,属于光电子技术领域。本发明的焊盘为圆环状的圆环电极,通过圆环电极四周注入电流,通过ITO导入到环内的MQW层,从而产生发光,因环形电极及四周DBR层的限制,使光线集中于圆环出射,通过改变圆环的形状、材料可进一步改变出光角度,相较于正面出光的Micro芯片,本发明进一步缩小了出光角度,降低了对相邻像素的混光影响,本发明适用于RGB颜色的发光芯片。
Description
技术领域
本发明涉及一种能够控制出光角度的Micro led芯片制备方法,属于光电子技术领域。
背景技术
基于micro-led阵列的微显示器具有很高的应用前景,其与传统的液晶显示器(lcd)和有机发光显示器(oled)相比,拥有着高效率、低功耗、超高解析度、超快响应速度和宽可视角度等优势,被认为是一种“次世代显示技术”。
LED微缩带来的边缘效应会降低芯片的亮度及发光效率。芯片的几何结构关系到像素光源的出光角度,因此面向不同的应用需求,芯片几何结构需要做出相应的改变。这需要上下游领域的密切配合。随着芯片尺寸的缩小,像素光源的密集程度增加,当芯片尺寸缩小到20微米及以下时,各像素点之间的光串扰问题变得不容忽视,需要从芯片结构设计上配合封装技术对像素进行有效隔离,减少像素点之间的光串扰。
中国专利文献CN217847979U公开了一种小发光角的MicroLED芯片,其特征在于,包括:外延结构,所述外延结构包括N-GaN层、多量子阱层和P-GaN层,所述多量子阱层位于所述N-GaN层和所述P-GaN层之间;设置在所述P-GaN层背离所述多量子阱层一侧表面的透明导电薄膜;设置在所述外延结构和所述透明导电薄膜一侧表面的全反射层;设置在所述透明导电薄膜背离所述P-GaN层一侧表面的P-Pad层;设置在所述N-GaN层一侧表面的N-Pad层;设置在所述N-GaN层另一侧表面的功能层,所述功能层由低折射率材料和高折射率材料交替堆叠形成。通过在MicroLED芯片的全侧壁以及正面包覆全反射镜,并在出光面镀功能层,利用功能层和全反射镜来实现MicroLED发光角度的自由控制,并且工艺容易实现,有效光效高。该专利的功能层为31或者51层的高低折射率材料堆叠而成,对生长材料、生长时间要求高,需要控制每种材料的折射率及膜层厚度,不利于批量生产及反射功能的实现。
中国专利文献CN112635452A公开了一种出光角度可控的Micro-LED显示器件结构,它包括像素结构,其特征是所述的像素结构包括LED垂直芯片阵列和LED倒装芯片阵列,单颗LED像素的尺寸为30μm~50μm,通过LED芯片阵列上的组合反射镜设计以及器件封装层的周期性微结构设计实现Micro-LED显示器件出光角度控制的功能,不仅提高了光线利用率,消除了光污染,还免除了通过增加光学组件收光的后道加固环节,实现了器件轻薄化,低功耗的优势,可满足头平显等特殊领域的高可靠性应用。1.一种出光角度可控的Micro-LED显示器件结构,其特征在于包括以下两种情况:(1)显示器件的像素结构为垂直LED芯片阵列:器件结构由下至上依次为P电极、电流扩展层、反射镜、P型GaN、量子肼、N型GaN和共N电极,P电极设置在基板上,每颗独立的LED像素两侧边各包含一层或多层组合反射镜;共N电极的上部设有两层周期性微结构封装层;(2)显示器件的像素结构为倒装LED芯片阵列:器件结构由下至上依次为P电极、电流扩展层、反射镜、P型GaN、量子肼、N型GaN和N电极,P电极设置在基板上,每颗独立的LED像素两侧边各包括一层或多层组合反射镜;N型GaN的上部设有两层周期性微结构封装层;所述的周期性微结构封装层的材料为高弹性聚丙烯酸酯树脂;单层周期性微结构封装层的厚度t为25μm~30μm,下层呈横向锯齿状,上层呈纵向锯齿状,上下两层微结构排列方向之间的夹角σ为90°;每层锯齿状微结构的棱角δ为60°~120°,棱间距d为29μm~104μm。该专利的正面为全出光,无法缩小出光范围。
发明内容
针对上述问题,本发明提供了一种能够控制出光角度的Micro led芯片制备方法,相比传统的中间制作金属焊盘,本发明焊盘为圆环状的圆环电极,通过圆环电极四周注入电流,通过ITO导入到环内的MQW层,从而产生发光,因环形电极及四周DBR层的限制,使光线集中于圆环出射,通过改变圆环的形状、材料可进一步改变出光角度,相较于正面出光的Micro芯片,本发明进一步缩小了出光角度,降低了对相邻像素的混光影响,本发明适用于RGB颜色的发光芯片。
本发明的技术方案如下:
一种能够控制出光角度的Micro led芯片制备方法,包括如下步骤:
(1)在衬底上进行采用AlGaInP\GaN材料的外延生长,形成对应的RGB发光材料,发光材料由下至上包括N型层、MQW和P型层;
(2)对完成外延生长的发光材料的P型层进行干法刻蚀,刻蚀至衬底上表面,形成多个独立的发光单元;
(3)利用光刻技术对每个独立的发光单元进行掩膜制作,利用掩膜保护中心出光区域,将芯片四周及侧壁露出;
(4)对出光面的四周及侧壁进行离子注入;
(5)利用ALD或PVD沉积Al2O3,对侧壁及表面形成钝化保护层;
(6)使用去胶液,去除中心出光区域的掩膜;
(7)利用电子束蒸发或磁控溅射在晶圆表面形成DBR(布拉格反射镜),DBR材料为低折射率材料和高折射率介电材料交替堆叠形成;
(8)通过离子束刻蚀的方式,对出光面进行刻蚀;
(9)对刻蚀出的出光面制作ITO;
(10)在ITO上方制作圆环电极;圆环电极图形在光刻时可以为连续的圆环或间断的圆环,间断数量根据对出光角度的不同要求设定,当需要增大出光角度时,可以将完整的圆环分割为多个扇形组成的电极;
(11)使用临时键合材料,PI\BCB\光刻胶等,将晶圆临时键合到临时衬底上;
(12)通过湿法腐蚀或者激光剥离的方式将外延层与衬底剥离;
(13)对剥离后露出的N型层沉积制作ITO;
(14)通过双面曝光的方式,完成对ITO的图形制作,N型层对应P面圆环电极环内的区域留有ITO,其他区域的ITO去除;
(15)对N面制备金属反射镜,完成芯片制作。
优选的,步骤(3)中四周露出的区域的宽度为芯片中心至边缘距离的20%。
优选的,步骤(4)中,优选注入N离子,此部分电流不导通,MQW也不发光,可以降低侧壁电流及悬挂键。
优选的,步骤(5)中,钝化保护层厚度为10-100nm。
优选的,步骤(7)中,低折射率材料为SiO2、MgF2或Al2O3,高折射率材料为TiO2或Ti3O5。
优选的,步骤(9)中,ITO的厚度为10-100纳米;
优选的,步骤(10)中,圆环电极的外环至芯片边缘的距离为芯片中心至边缘距离的10%,圆环电极的材料为金、银、铝等具有高反射率的金属材料,圆环电极高度1-10μm,圆环电极顶部直径为底部直径的1-1.1倍,圆环电极底部直径为步骤8中刻蚀出的DBR孔直径。
优选的,步骤(12)中,湿法腐蚀的腐蚀液为体积比3:1的氨水、双氧水混合液,或者为体积比3:1:1的醋酸、磷酸、双氧水的混合液。
优选的,步骤(14)中,ITO的厚度为10-100纳米。
优选的,步骤(15)中的金属反射镜材质为金、银、铝的一种或几种材料的组合,厚度为1-2微米。
本发明的出光孔径直接决定了出光区域、角度,开设不同的直径、倾角的孔,出面角度就响应变化,并且圆环电极的材质从反射变为反射率较低时,会进一步降低出光角度。
本发明未详尽之处,均可参见现有技术。
本发明的有益效果为:
(1)本发明能够控制出光角度,提高像素亮度。
(2)本发明可降低对临近像素的混光。
(3)本发明的制备方法便捷,效果显著。
附图说明
构成本申请的一部分的说明书附图用来提供对本申请的进一步理解,本申请的示意性实施例及其说明用于解释本申请,并不构成对本申请的不当限定。
图1为本发明制成的Micro LED的剖视图;
图2为本发明制成的Micro LED的俯视图;
图3为本发明步骤2制成的Micro led芯片的剖视图;
图4为本发明步骤3制成的Micro led芯片的剖视图;
图5为本发明步骤4制成的Micro led芯片的剖视图;
图6为本发明步骤5制成的Micro led芯片的剖视图;
图7为本发明步骤6制成的Micro led芯片的剖视图;
图8为本发明步骤7制成的Micro led芯片的剖视图;
图9为本发明步骤8制成的Micro led芯片的剖视图;
图10为本发明步骤9\10制成的Micro led芯片的剖视图;
图11为本发明步骤11制成的Micro led芯片的剖视图;
图12为本发明步骤12制成的Micro led芯片的剖视图;
图13为本发明步骤13制成的Micro led芯片的剖视图;
图14为本发明步骤14制成的Micro led芯片的剖视图;
图15为本发明步骤14制成的Micro led芯片的剖视图;
图16为圆环电极的两种设置方式,其中(a)、(b)为两种不同的形式;
图17为圆环电极的俯视图,其中(a)为基准圆环电极,(b)为增大出光角度的圆环电极一,(c)为增大出光角度的圆环电极二。
具体实施方式
为了使本技术领域的人员更好的理解本说明书中的技术方案,下面结合本说明书实施中的附图,对本发明书实施例中的技术方案进行清楚、完整的描述,但不仅限于此,本发明未详尽说明的,均按本领域常规技术。
实施例1
一种能够控制出光角度的Micro led芯片制备方法,如图1至图17所示,包括如下步骤:
(1)在蓝宝石衬底上进行采用GaN材料的外延生长,形成对应的蓝绿光发光材料,发光材料由下至上包括N型层、MQW和P型层;
(2)对完成外延生长的发光材料的P型层进行干法刻蚀,刻蚀至蓝宝石衬底上表面,形成多个独立的发光单元;
(3)利用光刻技术对每个独立的发光单元进行掩膜制作,利用掩膜保护中心出光区域,将芯片四周及侧壁露出,四周露出的区域的宽度为芯片中心至边缘距离的20%;
(4)对出光面的四周及侧壁进行离子注入,优选注入N离子;
(5)利用ALD或PVD沉积Al2O3,对侧壁及表面形成钝化保护层,厚度为10-100nm;
(6)使用去胶液,去除中心出光区域的掩膜;
(7)利用电子束蒸发或磁控溅射在晶圆表面形成DBR(布拉格反射镜),DBR材料为低折射率材料和高折射率介电材料交替堆叠形成;低折射率材料为SiO2、MgF2或Al2O3,高折射率材料为TiO2或Ti3O5;
(8)通过离子束刻蚀的方式,对出光面进行刻蚀,其中露出区域到芯片边缘的距离为中心至芯片边缘距离的20%;
(9)对刻蚀出的出光面制作ITO,ITO的厚度为10-100纳米;
(10)在ITO上方制作圆环电极;圆环电极图形为连续的圆环或间断的圆环,间断数量根据对出光角度的不同要求设定,当需要增大出光角度时,可以将完整的圆环分割为多个扇形组成的电极,如图17所示;
圆环电极的外环至芯片边缘的距离为芯片中心至边缘距离的10%,圆环电极的材料为金、银、铝等具有高反射率的金属材料,圆环电极高度1-10μm,圆环电极顶部直径为底部直径的1-1.1倍,如图16所示,圆环电极底部直径为步骤8中刻蚀出的DBR孔直径。
(11)使用临时键合材料,PI\BCB\光刻胶等,将晶圆临时键合到临时衬底上,键合层厚度可以是0.1微米至10微米;
(12)通过激光剥离的方式将外延层与衬底剥离;
(13)对剥离后露出的N型层沉积制作ITO,ITO的厚度为10-100纳米;
(14)通过双面曝光的方式,完成对ITO的图形制作,N型层对应P面圆环电极环内的区域留有ITO,其他区域的ITO去除;
(15)对N面制备金属反射镜,完成芯片制作,金属反射镜材质为金、银、铝的一种或几种材料的组合,厚度为1-2微米。
实施例2
一种能够控制出光角度的Micro led芯片制备方法,包括如下步骤:
(1)在GaAs衬底上进行采用AlGaInP材料的外延生长,形成对应的红光发光材料,发光材料由下至上包括N型层、MQW和P型层;
(2)对完成外延生长的发光材料的P型层进行干法刻蚀,刻蚀至GaAs衬底上表面,形成多个独立的发光单元;
(3)利用光刻技术对每个独立的发光单元进行掩膜制作,利用掩膜保护中心出光区域,将芯片四周及侧壁露出,四周露出的区域的宽度为芯片中心至边缘距离的20%;
(4)对出光面的四周及侧壁进行离子注入,优选注入N离子;
(5)利用ALD或PVD沉积Al2O3,对侧壁及表面形成钝化保护层,厚度为10-100nm;
(6)使用去胶液,去除中心出光区域的掩膜;
(7)利用电子束蒸发或磁控溅射在晶圆表面形成DBR(布拉格反射镜),DBR材料为低折射率材料和高折射率介电材料交替堆叠形成;低折射率材料为SiO2、MgF2或Al2O3,高折射率材料为TiO2或Ti3O5;
(8)通过离子束刻蚀的方式,对出光面进行刻蚀;
(9)对刻蚀出的出光面制作ITO,ITO的厚度为10-100纳米;
(10)在ITO上方制作圆环电极;圆环电极图形为连续的圆环或间断的圆环,间断数量根据对出光角度的不同要求设定,当需要增大出光角度时,可以将完整的圆环分割为多个扇形组成的电极;
圆环电极的外环至芯片边缘的距离为芯片中心至边缘距离的10%,圆环电极的材料为金、银、铝等具有高反射率的金属材料,圆环电极高度1-10μm,圆环电极顶部直径为底部直径的1-1.1倍,圆环电极底部直径为步骤8中刻蚀出的DBR孔直径。
(11)使用临时键合材料,PI\BCB\光刻胶等,将晶圆临时键合到临时衬底上;
(12)通过湿法腐蚀的方式将外延层与衬底剥离;
湿法腐蚀的腐蚀液为体积比3:1的氨水、双氧水混合液,或者为体积比3:1:1的醋酸、磷酸、双氧水的混合液。
(13)对剥离后露出的N型层沉积制作ITO,ITO的厚度为10-100纳米;
(14)通过双面曝光的方式,完成对ITO的图形制作,N型层对应P面圆环电极环内的区域留有ITO,其他区域的ITO去除;
(15)对N面制备金属反射镜,完成芯片制作,金属反射镜材质为金、银、铝的一种或几种材料的组合,厚度为1-2微米。
以上所述是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明所述原理的前提下,还可以作出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。
Claims (10)
1.一种能够控制出光角度的Micro led芯片制备方法,其特征在于,包括如下步骤:
(1)在衬底上进行采用AlGaInP\GaN材料的外延生长,形成对应的RGB发光材料;
(2)对完成外延生长的发光材料的P型层进行干法刻蚀,刻蚀至衬底上表面,形成多个独立的发光单元;
(3)利用光刻技术对每个独立的发光单元进行掩膜制作,利用掩膜保护中心出光区域,将芯片四周及侧壁露出;
(4)对出光面的四周及侧壁进行离子注入;
(5)利用ALD或PVD沉积Al2O3,对侧壁及表面形成钝化保护层;
(6)使用去胶液,去除中心出光区域的掩膜;
(7)利用电子束蒸发或磁控溅射在晶圆表面形成DBR,DBR材料为低折射率材料和高折射率介电材料交替堆叠形成;
(8)通过离子束刻蚀的方式,对出光面进行刻蚀;
(9)对刻蚀出的出光面制作ITO;
(10)在ITO上方制作圆环电极;圆环电极图形为连续的圆环或间断的圆环,间断数量根据对出光角度的不同要求设定,当需要增大出光角度时,将完整的圆环分割为多个扇形组成的电极;
(11)使用临时键合材料,PI\BCB\光刻胶等,将晶圆临时键合到临时衬底上;
(12)通过湿法腐蚀或者激光剥离的方式将外延层与衬底剥离;
(13)对剥离后露出的N型层沉积制作ITO;
(14)通过双面曝光的方式,完成对ITO的图形制作,N型层对应P面圆环电极环内的区域留有ITO,其他区域的ITO去除;
(15)对N面制备金属反射镜,完成芯片制作。
2.根据权利要求1所述的能够控制出光角度的Micro led芯片制备方法,其特征在于,步骤(3)中四周露出的区域的宽度为芯片中心至边缘距离的20%。
3.根据权利要求1所述的能够控制出光角度的Micro led芯片制备方法,其特征在于,步骤(4)中,优选注入N离子。
4.根据权利要求1所述的能够控制出光角度的Micro led芯片制备方法,其特征在于,步骤(5)中,钝化保护层厚度为10-100nm。
5.根据权利要求1所述的能够控制出光角度的Micro led芯片制备方法,其特征在于,步骤(7)中,低折射率材料为SiO2、MgF2或Al2O3,高折射率材料为TiO2或Ti3O5。
6.根据权利要求1所述的能够控制出光角度的Micro led芯片制备方法,其特征在于,步骤(9)中,ITO的厚度为10-100纳米。
7.根据权利要求1所述的能够控制出光角度的Micro led芯片制备方法,其特征在于,步骤(10)中,圆环电极的外环至芯片边缘的距离为芯片中心至边缘距离的10%,圆环电极的材料为金、银、铝等具有高反射率的金属材料,圆环电极高度1-10μm,圆环电极顶部直径为底部直径的1-1.1倍。
8.根据权利要求1所述的能够控制出光角度的Micro led芯片制备方法,其特征在于,步骤(12)中,湿法腐蚀的腐蚀液为体积比3:1的氨水、双氧水混合液,或者为体积比3:1:1的醋酸、磷酸、双氧水的混合液。
9.根据权利要求1所述的能够控制出光角度的Micro led芯片制备方法,其特征在于,步骤(14)中,ITO的厚度为10-100纳米。
10.根据权利要求1所述的能够控制出光角度的Micro led芯片制备方法,其特征在于,步骤(15)中的金属反射镜材质为金、银、铝的一种或几种材料的组合,厚度为1-2微米。
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