CN117073516A - TPoS strain sensor with low temperature drift characteristic - Google Patents
TPoS strain sensor with low temperature drift characteristic Download PDFInfo
- Publication number
- CN117073516A CN117073516A CN202311059999.2A CN202311059999A CN117073516A CN 117073516 A CN117073516 A CN 117073516A CN 202311059999 A CN202311059999 A CN 202311059999A CN 117073516 A CN117073516 A CN 117073516A
- Authority
- CN
- China
- Prior art keywords
- tpos
- tuning fork
- metal electrode
- fork type
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 90
- 239000002184 metal Substances 0.000 claims abstract description 90
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 40
- 239000010703 silicon Substances 0.000 claims abstract description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 230000005540 biological transmission Effects 0.000 claims description 18
- 238000002955 isolation Methods 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims description 3
- 239000002033 PVDF binder Substances 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 230000008859 change Effects 0.000 abstract description 17
- 230000000694 effects Effects 0.000 abstract description 9
- 238000001514 detection method Methods 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 description 11
- 239000010408 film Substances 0.000 description 8
- 239000000470 constituent Substances 0.000 description 7
- 239000013307 optical fiber Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- -1 but not limited to Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000026683 transduction Effects 0.000 description 1
- 238000010361 transduction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The application belongs to the technical field of micro-electro-mechanical systems, and particularly relates to a TPoS strain sensor with low temperature drift characteristic. The tuning fork type TPoS resonator comprises a silicon substrate and a tuning fork type TPoS resonator body and a metal electrode disc, wherein the tuning fork type TPoS resonator is integrated on the silicon substrate; the lower surface of tuning fork type TPoS resonator main body is equipped with the temperature compensating layer, and the temperature compensating layer is made by positive temperature coefficient material. Compared with the prior art, the tuning fork type TPoS resonator is used as the core structure of the strain sensor, the strain variation detection is realized, the tuning fork type TPoS resonator is used as the core structure of the strain sensor, and the frequency offset effect caused by the Young modulus change of the sensor silicon layer material when the temperature changes is counteracted by the arranged temperature compensation layer, so that the low temperature drift characteristic is realized.
Description
Technical Field
The application belongs to the technical field of Micro-Electro-Mechanical Systems (MEMS), and particularly relates to a TPoS (Thin-film Piezoelectric-on-Silicon) strain sensor with low temperature drift characteristics.
Background
The strain sensor is a sensor for measuring the stress condition of an object, and has wide application in engineering, science and medical fields. The strain information can provide real-time and accurate strain information, helps people to know the strain condition of an object, and provides important data support for engineering design, scientific research and medical diagnosis. High performance strain sensors have been of interest to researchers.
Conventional strain sensors include piezoresistive, fiber optic, and piezoelectric. The piezoresistive strain sensor realizes force measurement by utilizing the piezoresistive effect of a material, namely the characteristic that the resistance of the material changes along with the change of stress. Common piezoresistive sensor materials include silicon, silicides, and the like. The strain information of the stressed object is obtained by measuring the change of the resistance value, and the sensor has the advantages of simple structure, lower price, small volume, wide application range and the like, but the sensor has lower precision, larger temperature drift and is easily influenced by environmental factors such as temperature, humidity and the like. The optical fiber strain sensor measures strain by utilizing the change in the optical signal in the optical fiber when subjected to a force. The optical fiber sensor has the advantages of high sensitivity, anti-interference capability and the like, and is commonly used for monitoring strain change in a complex structure or a high-temperature environment. The device is free from electromagnetic interference, high-temperature working capacity, corrosion-resistant, suitable for long-distance transmission, but high in price, complex in installation and debugging and sensitive to light source and optical fiber loss. Piezoelectric strain sensors utilize the piezoelectric effect to measure strain. The piezoelectric material can generate charge accumulation or potential change when being acted by force, and the strain can be obtained by measuring the charge or potential change. The piezoelectric strain sensor has a wider working frequency range, high temperature resistance and strong anti-interference capability, is sensitive to temperature and humidity changes, has relatively low sensitivity and is easy to be interfered by mechanical vibration.
Compared with the traditional strain sensors, the TPoS strain sensor prepared by the micro-processing technology has the advantages of high sensitivity, low power consumption, small volume, easy compatibility with the CMOS technology and the like, and is widely paid attention to by researchers in recent years, however, the TPoS strain sensor still has the problem of larger shift of resonance frequency along with temperature change. Therefore, it is important to design a TPoS strain sensor with low temperature drift characteristics.
Disclosure of Invention
In view of the above, the present application proposes a TPoS strain sensor with low temperature drift characteristics, which detects the offset of the resonant frequency by using the influence of the axial strain on the resonant frequency of the tuning fork TPoS resonator, so as to realize the detection of the strain; the temperature compensation layer is prepared at the bottom of the tuning fork type TPoS resonator to inhibit the influence of temperature on the resonance frequency of the TPoS resonator, so that the problem that the resonance frequency of the strain sensor is greatly deviated along with the change of the temperature is solved while the sensitivity of the TPoSTPoS strain sensor is ensured.
The technical scheme provided by the application is as follows:
a TPoS strain sensor with low temperature drift characteristics, comprising a silicon substrate, a tuning fork TPoS resonator integrated on the silicon substrate;
the silicon substrate is a flat plate with a hollow middle space; the tuning fork type TPoS resonator comprises a tuning fork type TPoS resonator body and a metal electrode disc;
the tuning fork type TPoS resonator main body comprises 2n+1 resonant beams, two connecting ends and a temperature compensation layer, wherein n is an integer greater than zero; 2n+1 resonant beams are connected in parallel between the two connecting ends; each resonant beam has the same structure size and comprises a doped silicon layer and a metal transmission line arranged on the upper surface of the doped silicon layer; the metal transmission line comprises two metal electrodes and a strip-shaped metal wire positioned between the two metal electrodes, one end of the strip-shaped metal wire is connected with one metal electrode, and the other end of the strip-shaped metal wire is connected with the other metal electrode; a piezoelectric film layer is arranged between the two metal electrodes and the doped silicon layer, and an isolation oxide layer is arranged between the strip-shaped metal wire and the doped silicon layer; two connecting ends are respectively provided with an anchor point, and the tuning fork type TPoS resonator main body is connected with the silicon substrate through the anchor points on the connecting ends; the temperature compensation layer is made of positive temperature coefficient material and is arranged on the lower surface of the tuning fork type TPoS resonator main body;
the metal electrode disc is arranged on the non-hollowed-out area of the silicon substrate at one side of the tuning fork type TPoS resonator main body; an isolation oxide layer is arranged between the metal electrode plate and the silicon substrate, and comprises an input metal electrode plate, an output metal electrode plate and two grounding metal electrode plates, wherein the input metal electrode plate and the output metal electrode plate are positioned between the two grounding metal electrode plates, the input metal electrode plate is connected with the metal transmission lines on n+1 resonant beams, and the output metal electrode plate is connected with the metal transmission lines on the rest n resonant beams.
Further, the isolation oxide layer is made of silicon dioxide, and the metal transmission line is made of conductive metals such as silver, copper, gold, aluminum, nickel or lead; the piezoelectric material of the piezoelectric film layer is AlN, znO, PZT, PVDF, PVDF-TrEE, PVDF-TFE and LiNbO 3 Or LiTaO 3 Etc.
Further, the thickness of the isolation oxide layer is 0.1-2 μm, the thickness of the metal transmission line is 0.5-5 μm, and the thickness of the piezoelectric film layer is 0.5-5 μm.
Further, the thickness of the temperature compensation layer is 0.5-5 μm.
Further, the tuning fork type TPoS resonator is of a central symmetry structure.
After the technical scheme is adopted, the application has the following beneficial effects:
1. the TPoS strain sensor with low temperature drift characteristic of the application utilizes the characteristic that the tuning fork type TPoS resonator is subjected to linear change with the axial force and the frequency deviation is also subjected to linear change with the axial force, and realizes the change amount detection of strain by measuring the change amount of the resonance frequency of the tuning fork type TPoS resonator. Compared with the existing stress test sensor, the tuning fork type TPoS resonator is used as a core structure of the strain sensor, so that the strain sensor has the advantages of high electromechanical transduction efficiency, higher quality factor under normal pressure, easiness in large-scale batch processing and preparation, lower packaging cost and the like.
2. According to the application, the temperature compensation layer with positive temperature coefficient is arranged on the lower surface of the tuning fork type TPoS resonator main body, namely, the lower surface of each resonant beam and the lower surfaces of the two connecting ends, so that the frequency offset effect caused by the Young modulus change of the sensor silicon layer material when the temperature changes is counteracted, and the low temperature drift characteristic is realized.
Drawings
The accompanying drawings, which are included to provide a further understanding of embodiments of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. In the drawings:
FIG. 1 is a three-dimensional block diagram of a TPoS strain sensor with low temperature drift characteristics provided by the present application;
FIG. 2 is a cross-sectional view of A-A 'and B-B' of FIG. 1;
FIG. 3 is a graph of temperature sensitivity of a tuning fork TPoS strain sensor provided by the present application as a function of temperature compensated layer thickness;
FIG. 4 is a graph showing the variation of the resonant frequency offset of the TPoS strain sensor with temperature when the temperature compensation layer is at different positions;
FIG. 5 is a graph showing the variation of the resonant frequency shift of the TPoS strain sensor with applied strain when the temperature compensation layer is at different positions;
reference numerals:
1. tuning fork TPoS resonator; 101. inputting a metal electrode plate; 102. outputting a metal electrode plate; 103. a grounded metal electrode disk; 104. a strip-shaped metal wire; 105. an isolation oxide layer; 106 a metal electrode; 2. a piezoelectric layer; 3. an anchor point; 4. a silicon substrate; 401. doping the silicon layer; 5. a temperature compensation layer.
Detailed Description
Hereinafter, the terms "comprises" or "comprising" as may be used in various embodiments of the present application indicate the presence of inventive functions, operations or elements, and are not limiting of the addition of one or more functions, operations or elements. Furthermore, as used in various embodiments of the application, the terms "comprises," "comprising," and their cognate terms are intended to refer to a particular feature, number, step, operation, element, component, or combination of the foregoing, and should not be interpreted as first excluding the existence of or increasing likelihood of one or more other features, numbers, steps, operations, elements, components, or combinations of the foregoing.
In various embodiments of the application, the expression "or" at least one of a or/and B "includes any or all combinations of the words listed simultaneously. For example, the expression "a or B" or "at least one of a or/and B" may include a, may include B or may include both a and B.
Expressions (such as "first", "second", etc.) used in the various embodiments of the application may modify various constituent elements in the various embodiments, but the respective constituent elements may not be limited. For example, the above description does not limit the order and/or importance of the elements. The above description is only intended to distinguish one element from another element. For example, the first user device and the second user device indicate different user devices, although both are user devices. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of various embodiments of the present application.
It should be noted that: if it is described to "connect" one component element to another component element, a first component element may be directly connected to a second component element, and a third component element may be "connected" between the first and second component elements. Conversely, when one constituent element is "directly connected" to another constituent element, it is understood that there is no third constituent element between the first constituent element and the second constituent element.
The terminology used in the various embodiments of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the various embodiments of the application. As used herein, the singular is intended to include the plural as well, unless the context clearly indicates otherwise. Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which various embodiments of the application belong. The terms (such as those defined in commonly used dictionaries) will be interpreted as having a meaning that is the same as the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein in connection with the various embodiments of the application.
For the purpose of making apparent the objects, technical solutions and advantages of the present application, the present application will be further described in detail with reference to the following examples and the accompanying drawings, wherein the exemplary embodiments of the present application and the descriptions thereof are for illustrating the present application only and are not to be construed as limiting the present application.
Example 1
As shown in fig. 1, the TPoS strain sensor with low temperature drift characteristics provided in this embodiment includes a silicon substrate 4, and a tuning fork TPoS resonator 1 integrated on the silicon substrate 4.
The silicon substrate 4 is a flat plate with a hollow middle space; the tuning fork type TPoS resonator 1 includes a tuning fork type TPoS resonator body and a metal electrode. The tuning fork type TPoS resonator 1 comprises a tuning fork type TPoS resonator body and a metal electrode disc;
the tuning fork type TPoS resonator body 1 comprises 2n+1 resonator beams, two connection ends and a temperature compensation layer 5, where n is an integer greater than zero. 2n+1 resonant beams are connected in parallel between the two connection ends. Each resonant beam has the same structure size and comprises a doped silicon layer 401 and a metal transmission line arranged on the upper surface of the doped silicon layer 401; the metal transmission line comprises two metal electrodes 106 and a strip-shaped metal wire 104, wherein the two metal electrodes are a first metal electrode 106 and a second metal electrode respectively, one end of the strip-shaped metal wire 104 is connected with the first metal electrode, and the other end is connected with the second metal electrode. A piezoelectric film layer 2 is arranged between the two metal electrodes and the doped silicon layer 401, and an isolation oxide layer 105 is arranged between the strip-shaped metal wire 104 and the doped silicon layer 401; two connecting ends are respectively provided with an anchor point 3, and the tuning fork type TPoS resonator main body is connected with the silicon substrate 4 through the anchor points 3 on the connecting ends. The temperature compensation layer 5 is arranged on the lower surface of the tuning fork type TPoS resonator body, namely, a layer of temperature compensation layer with positive temperature coefficient is arranged on the lower surface of each resonant beam and the lower surfaces of the two connecting ends.
The metal electrode plate is arranged on the non-hollowed-out area of the silicon substrate 4 at one side of the tuning fork resonator main body. An isolation oxide layer 105 is arranged between the metal electrode plate and the silicon substrate 4, and comprises an input metal electrode plate 101, an output metal electrode plate 102 and two grounding metal electrode plates 103, wherein the input metal electrode plate 101 and the output metal electrode plate 102 are positioned between the two grounding metal electrode plates 103, the input metal electrode plate 101 is connected with metal transmission lines on n+1 resonant beams, and the output metal electrode plate 103 is connected with the metal transmission lines on the remaining n resonant beams.
In this embodiment, the tuning fork TPoS resonator has a central symmetry structure. The isolation oxide layer is made of silicon dioxide, and the thickness of the isolation oxide layer is 0.1-2 mu m. The metal transmission line adopts conductive metals such as silver, copper, gold, aluminum, nickel or lead, etc., and the thickness is 0.5 mu m-5 mu m; the piezoelectric material of the piezoelectric film layer is AlN, znO, PZT, PVDF, PVDF-TrEE, PVDF-TFE and LiNbO 3 Or LiTaO 3 And the like, and the thickness is 0.5-5 μm. The temperature compensation layer is made of materials including, but not limited to, silicon dioxide and other positive temperature coefficient materials, and has a thickness of 0.5-5 μm.
When in use, external axial strain is loaded on the tuning fork type TPoS resonator 1 through conduction of the anchor point 3, so that intrinsic parameters of materials of the tuning fork type TPoS resonator 1, such as rigidity, density and the like, are changed, and the characteristic frequency of the tuning fork type TPoS resonator 1 is changed. The adopted mode is an out-of-plane opposite-phase vibration mode, and has obvious advantages compared with other vibration modes, such as: the characteristic frequency of the out-of-plane anti-phase vibration mode with high Q value, high signal intensity and high force sensitivity can be expressed as follows:
wherein L is t Is the length of a resonant beam of the tuning fork type TPoS resonator, W t For the width of the resonance beam, t Si For tuning-fork TPoS resonator thickness, E Si Is the equivalent Young's modulus of the tuning fork type TPoS resonator.
When one end anchor point of the tuning fork type TPoS resonator receives axial force F s In the event of an impact, the control system,the resonant frequency will change and can be defined by the formula:
by utilizing the characteristic that the stress of the tuning fork type TPoS resonator linearly changes with the born axial force and the frequency deviation also linearly changes with the born axial force, the change amount of the strain can be detected by measuring the change amount of the resonance frequency of the tuning fork type TPoS resonator.
Fig. 2 is a three-dimensional structure diagram of the tuning-fork TPoS resonator 1 in the upper part, and two cross sections of the tuning-fork TPoS resonator resonant beam in the lower part. As shown in fig. 2, a temperature compensation layer 5 is formed on the lower surface of the doped silicon 401 in this embodiment, and the main purpose of the temperature compensation layer 5 is to suppress temperature drift. The principle of the embodiment for inhibiting temperature drift is as follows:
the main reason for the occurrence of temperature drift is that when the external temperature increases, the young's modulus of the material changes, and for the material of which the tuning fork TPoS resonator 1 is composed, the young's modulus gradually decreases when the temperature increases, see the following formula:
wherein L is t Is the length of a resonant beam of the tuning fork type TPoS resonator, W t For the width of the resonance beam, t Si For tuning-fork TPoS resonator thickness, E Si Is the equivalent Young's modulus of the tuning fork type TPoS resonator.
From this formula, it can be seen that as the temperature increases, the Young's modulus gradually decreases and f0 is affected by the temperature. Based on the above, in this embodiment, a material with a positive temperature coefficient, such as silicon dioxide, is added to the film structure in the strain sensor, so as to cancel the influence of the negative material temperature coefficient, reduce the sensitivity of the resonance frequency of the strain sensor to temperature, and implement temperature compensation, thereby suppressing the influence of temperature to the sensor sensitivity. The mode adopted is an out-of-plane anti-phase vibration mode, and the energy is mainly concentrated on the lower surface of the doped silicon 401. Since the overall young's modulus is a weighted average of the young's modulus of the individual layers of film material, the young's modulus has a greater effect on the ratio of the overall young's modulus when a material is in the most energy concentrated position.
Wherein the resonator is driven and detected by the positive and inverse piezoelectric effects. And applying voltage to the input electrode, and deforming the piezoelectric material through the inverse piezoelectric effect to drive the tuning fork type TPoS resonator to vibrate according to a specific vibration mode. Meanwhile, the output metal electrode collects charges generated by the piezoelectric effect of the piezoelectric film on the other beam to form current, and finally the current is output through the output metal electrode.
Fig. 3 shows the effect of different temperature compensation layer thicknesses on temperature sensitivity, and the temperature drift of the device can be completely suppressed when the temperature compensation layer thickness is 1.09 μm under the tuning fork TPoS resonator size condition used in this example. The difference in strain sensitivity of the device between the inclusion and non-inclusion of the temperature compensation layer was also compared, and the result was a 13% decrease in strain sensitivity of the inclusion and non-inclusion of the temperature compensation layer as shown in fig. 4 and 5.
Compared with the traditional strain sensor, the low-temperature drift strain sensor provided by the embodiment has the advantages of reducing the influence of temperature on the sensor, along with low power consumption, small volume, easiness in compatibility with a CMOS (complementary metal oxide semiconductor) process and the like.
The foregoing description of the embodiments has been provided for the purpose of illustrating the general principles of the application, and is not meant to limit the scope of the application, but to limit the application to the particular embodiments, and any modifications, equivalents, improvements, etc. that fall within the spirit and principles of the application are intended to be included within the scope of the application.
Claims (5)
1. A TPoS strain sensor with low temperature drift characteristics, comprising a silicon substrate, a tuning fork TPoS resonator integrated on the silicon substrate, characterized in that:
the silicon substrate is a flat plate with a hollow middle space; the tuning fork type TPoS resonator comprises a tuning fork type TPoS resonator body and a metal electrode disc;
the tuning fork type TPoS resonator main body comprises 2n+1 resonant beams, two connecting ends and a temperature compensation layer, wherein n is an integer greater than zero; 2n+1 resonant beams are connected in parallel between the two connecting ends; each resonant beam has the same structure size and comprises a doped silicon layer and a metal transmission line arranged on the upper surface of the doped silicon layer; the metal transmission line comprises two metal electrodes and a strip-shaped metal wire positioned between the two metal electrodes, one end of the strip-shaped metal wire is connected with one metal electrode, and the other end of the strip-shaped metal wire is connected with the other metal electrode; a piezoelectric film layer is arranged between the two metal electrodes and the doped silicon layer, and an isolation oxide layer is arranged between the strip-shaped metal wire and the doped silicon layer; two connecting ends are respectively provided with an anchor point, and the tuning fork type TPoS resonator main body is connected with the silicon substrate through the anchor points on the connecting ends; the temperature compensation layer is made of positive temperature coefficient material and is arranged on the lower surface of the tuning fork type TPoS resonator main body;
the metal electrode disc is arranged on the non-hollowed-out area of the silicon substrate at one side of the tuning fork type TPoS resonator main body; an isolation oxide layer is arranged between the metal electrode plate and the silicon substrate, and comprises an input metal electrode plate, an output metal electrode plate and two grounding metal electrode plates, wherein the input metal electrode plate and the output metal electrode plate are positioned between the two grounding metal electrode plates, the input metal electrode plate is connected with the metal transmission lines on n+1 resonant beams, and the output metal electrode plate is connected with the metal transmission lines on the rest n resonant beams.
2. A TPoS strain sensor with low temperature drift characteristics as in claim 1, wherein: the isolation oxide layer is made of silicon dioxide, and the metal transmission line is made of conductive metals such as silver, copper, gold, aluminum, nickel or lead; the piezoelectric material of the piezoelectric film layer is AlN, znO, PZT, PVDF, PVDF-TrEE, PVDF-TFE and LiNbO 3 Or LiTaO 3 Etc.
3. A TPoS strain sensor with low temperature drift characteristics as in claim 1, wherein: the thickness of the isolation oxide layer is 0.1-2 mu m, the thickness of the metal transmission line is 0.5-5 mu m, and the thickness of the piezoelectric film layer is 0.5-5 mu m.
4. A TPoS strain sensor with low temperature drift characteristics according to any of claims 1 to 3, characterized in that: the thickness of the temperature compensation layer is 0.5-5 mu m.
5. A TPoS strain sensor with low temperature drift characteristics as in claim 1, wherein: the tuning fork type TPoS resonator is of a central symmetry structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311059999.2A CN117073516A (en) | 2023-08-22 | 2023-08-22 | TPoS strain sensor with low temperature drift characteristic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311059999.2A CN117073516A (en) | 2023-08-22 | 2023-08-22 | TPoS strain sensor with low temperature drift characteristic |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117073516A true CN117073516A (en) | 2023-11-17 |
Family
ID=88714865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311059999.2A Pending CN117073516A (en) | 2023-08-22 | 2023-08-22 | TPoS strain sensor with low temperature drift characteristic |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117073516A (en) |
-
2023
- 2023-08-22 CN CN202311059999.2A patent/CN117073516A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104198963B (en) | Magnetoelectric surface-acoustic-wave magnetic-field sensor and manufacturing method thereof | |
| CN104820113B (en) | A kind of quartzy twin beams power frequency resonator of integrated temperature sensitive unit | |
| Wang et al. | Analysis of thin film piezoelectric microaccelerometer using analytical and finite element modeling | |
| CN110501098B (en) | High-sensitivity micro-pressure sensor based on double-pressure membrane and weak coupling resonance system | |
| CN100570755C (en) | A kind of micro-cantilever resonator of low temperature cross sensitivity | |
| CN112945430B (en) | Acoustic surface wave high-temperature pressure sensor | |
| Cheng et al. | Design and fabrication of a resonant pressure sensor by combination of DETF quartz resonator and silicon diaphragm | |
| CN218217327U (en) | Micro-electromechanical system resonator | |
| CN110017922A (en) | A kind of probe-type high-precision force sensor based on full quartz resonator | |
| Hu et al. | A novel trapezoidal ScAlN/AlN-based MEMS piezoelectric accelerometer | |
| Shi et al. | High sensitivity MEMS accelerometer using PZT-based four L-shaped beam structure | |
| US8207649B2 (en) | Surface wave resonator having reduced parasitic resonance | |
| JP2004069562A (en) | Capacitance type mechanical quantity sensor | |
| JP6184006B2 (en) | Pressure sensor | |
| CN109883565A (en) | A kind of silicon micro-resonance type temperature sensitive chip based on SOI | |
| CN117073516A (en) | TPoS strain sensor with low temperature drift characteristic | |
| Solai et al. | Miniaturized but efficient cantilever beam vibration energy harvesters for wireless bridge health monitoring applications | |
| CN108195505A (en) | Micro-resonance type differential pressure pickup and pressure differential detection method with three beam tuning forks | |
| CN109883580B (en) | Full quartz differential type resonance pressure sensor chip | |
| CN105865666A (en) | Integrated biquartz tuning fork resonance sensing element and force measuring module | |
| CN215340279U (en) | MEMS (micro-electromechanical system) magnetoresistive sensor | |
| CN114793103A (en) | Acoustic wave resonator suitable for multi-parameter sensing | |
| CN113086940A (en) | Nano opto-mechanical gyroscope and preparation method thereof | |
| CN111812355B (en) | Low stress sensitivity silicon micro resonant accelerometer structure | |
| Kumar et al. | Ultrasensitive Pressure Sensor based on an Integrated Circular Piezoelectric MEMS Resonator and Diaphragm Structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |