CN117060729B - Boost switching circuit and control method thereof - Google Patents
Boost switching circuit and control method thereof Download PDFInfo
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- CN117060729B CN117060729B CN202311326690.5A CN202311326690A CN117060729B CN 117060729 B CN117060729 B CN 117060729B CN 202311326690 A CN202311326690 A CN 202311326690A CN 117060729 B CN117060729 B CN 117060729B
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
- H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
- H02H7/1213—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for DC-DC converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/44—Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
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- Power Engineering (AREA)
- Physics & Mathematics (AREA)
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Abstract
The invention relates to the technical field of power electronics, and discloses a boost switching circuit and a control method thereof, wherein the boost switching circuit comprises the following components: one end of the inductor is connected with the positive electrode of the power supply; the drain electrode of the first N-channel MOS tube is connected with the other end of the inductor; the drain electrode of the second N-channel MOS tube is connected with the source electrode of the first N-channel MOS tube, and the source electrode of the second N-channel MOS tube is connected with a load; the anode of the second body diode is connected with the source stage of the second N-channel MOS tube, and the cathode of the second body diode is connected with the drain electrode of the second N-channel MOS tube; the source electrode of the third N-channel MOS tube is connected with the negative electrode of the power supply, and the drain electrode of the third N-channel MOS tube is connected with the source electrode of the first N-channel MOS tube; the grid electrode of each MOS tube is connected with a corresponding control signal, and the third control signal is a square wave level signal; the input end of the voltage sensor is connected with the cathode of the second diode, the output end of the voltage sensor is connected with the MCU, and the collected current voltage is compared with a preset maximum threshold value and a preset minimum threshold value, so that the on-off of each MOS tube is controlled, and the active cutting-off, overvoltage protection and output boosting of the circuit are realized.
Description
Technical Field
The invention relates to the technical field of power electronics, in particular to a switch circuit capable of boosting and a control method thereof.
Background
The new energy batteries such as sodium ions and lithium batteries are increasingly applied, so that a new energy revolution is led, and compared with the traditional storage battery, the new energy battery has the advantages of high energy density, high charge and discharge efficiency, abundant raw materials, low cost, environmental protection, no pollution and the like; the defects are also clear, the safety of the new energy battery is poor, and the output energy voltage range is greatly changed. The voltage of the new energy battery is changed along with the change of the output current, and the voltage of the new energy battery with the rated value of 48V can reach 20V-70V, so that the voltage change at two ends of a load is large; if the load is a motor, the motor efficiency is reduced; if the load is a DC/DC inverter, the voltage and current stress becomes larger, the requirement on the DC/DC inverter product is increased, and the cost is increased. And new energy battery security is relatively poor, and the acupuncture, extrusion probably causes the damage to the battery body, in order to avoid the incident emergence, need in time cut off the connection of new energy battery and load, adopts the cutting off mode to have the protective tube at present, relay, MOS pipe.
The protective tube can effectively cut off the circuit, but can not be recovered after protection, and the practicability is poor; when the relay is used for cutting off a circuit, the use times and the service life of the relay are limited, and the loss is large and unreliable; the MOS tube circuit is utilized to realize the turn-off of the circuit, and has the characteristics of small loss, small volume, long service life, quick switch, safety and reliability, but because the output voltage of the new energy battery is greatly changed, the existing MOS tube switch circuit can not ensure that stable voltage is provided for a load when the circuit works normally, so that the working efficiency of the load is reduced. And can provide the circuit of stable voltage for the load, need possess the circuit structure of switch protection circuit and boost circuit simultaneously, need more components and parts, the cost is higher, the device is bulky.
Disclosure of Invention
Therefore, the technical problem to be solved by the invention is to solve the problems of high cost and large device volume when the MOS tube switch circuit in the prior art provides circuit protection and output boosting.
In order to solve the above technical problems, the present invention provides a boost switch circuit, comprising:
one end of the inductor is connected with the positive electrode of the power supply;
the drain electrode of the first N-channel MOS tube is connected with the other end of the inductor, and the grid electrode of the first N-channel MOS tube inputs a first control signal;
the drain electrode of the second N-channel MOS tube is connected with the source stage of the first N-channel MOS tube, the source stage of the second N-channel MOS tube is connected with a load, and the grid electrode of the second N-channel MOS tube inputs a second control signal;
the anode of the second body diode is connected with the source stage of the second N-channel MOS tube, and the cathode of the second body diode is connected with the drain electrode of the second N-channel MOS tube;
the source electrode of the third N-channel MOS tube is connected with the negative electrode of the power supply, the drain electrode of the third N-channel MOS tube is connected with the source electrode of the first N-channel MOS tube, and the grid electrode of the third N-channel MOS tube inputs a third control signal; the third control signal is a square wave level signal;
the voltage sensor, its input is connected with the negative pole of second body diode, and its output is connected with MCU for compare the current voltage of gathering with the maximum threshold value and the minimum threshold value of presetting in MCU, specifically include:
when the current voltage is smaller than a minimum threshold value, the first control signal outputs a high-level signal which enables the first N-channel MOS tube to be conducted, the second control signal outputs a low-level signal, the second N-channel MOS tube is turned off, the third control signal outputs a square wave level signal with a preset duty ratio, and the third N-channel MOS tube is conducted and turned off according to a preset frequency; after the power input voltage is boosted through the inductor and the third N-channel MOS tube, the power input voltage is output to a load through a second body diode;
when the current voltage is greater than a maximum threshold value, a first control signal is enabled to output a low-level signal, the first N-channel MOS tube is turned off, and power supply for a load is cut off;
when the current voltage is not smaller than a minimum threshold value and not larger than a maximum threshold value, the first control signal and the second control signal output high-level signals which enable the first N-channel MOS tube and the second N-channel MOS tube to be conducted, the third control signal is a low-level signal, and the third N-channel MOS tube is turned off; and the power supply output voltage is output to a load through the first N-channel MOS tube and the second N-channel MOS tube to supply power to the load.
In one embodiment of the present invention, further comprising:
and the anode of the first body diode is connected with the source stage of the first N-channel MOS tube, and the cathode of the first body diode is connected with the drain electrode of the first N-channel MOS tube.
In one embodiment of the present invention, further comprising:
and the anode of the third body diode is connected with the source stage of the third N-channel MOS tube, and the cathode of the third body diode is connected with the drain electrode of the third N-channel MOS tube.
In one embodiment of the present invention, further comprising:
the temperature sensor is arranged at a preset position in the load, is in communication connection with the MCU, and is used for collecting the running temperature of the load and sending the running temperature to the MCU so as to adjust the first control signal to enable the first N-channel MOS tube to be turned off when the running temperature exceeds a preset temperature threshold.
In one embodiment of the present invention, further comprising:
the humidity sensor is arranged at a preset position in the load, is in communication connection with the MCU, and is used for collecting the running humidity of the load and sending the running humidity to the MCU so as to adjust the first control signal to enable the first N-channel MOS tube to be turned off when the running humidity exceeds a preset humidity threshold value.
In one embodiment of the invention, the model of the MCU includes STM32F103C8T6, MSP430G2553, PIC16F15316, MC9S08DZ60.
The embodiment of the invention also provides a control method applied to the boosting switching circuit, which comprises the following steps:
the current voltage of the voltage sensor acquisition circuit is used for inputting the MCU and comparing with a preset maximum threshold value and a preset minimum threshold value;
if the current voltage is greater than the maximum threshold value, the MCU is utilized to adjust the first control signal to be a low-level signal, and the first N-channel MOS tube is turned off;
if the current voltage is smaller than the minimum threshold value, the MCU is utilized to adjust the first control signal to be a high-level signal for enabling the first N-channel MOS tube to be conducted, the second control signal is a low-level signal, the second N-channel MOS tube is turned off, the third control signal is a square wave level signal with a preset duty ratio, and the third N-channel MOS tube is controlled to be switched between a turned-off state and a turned-on state according to a preset frequency;
and if the current voltage is not greater than the maximum threshold value and not less than the minimum threshold value, regulating the first control signal and the second control signal to be high-level signals for enabling the first N-channel MOS tube and the second N-channel MOS tube to be conducted respectively by using the MCU, wherein the third control signal is a low-level signal, and the third N-channel MOS tube is turned off.
In one embodiment of the present invention, the preset duty cycle is expressed as:
；
representing the duty cycle of the square wave level signal input to the third N-channel MOS transistor,the turn-on time of the third N-channel MOS tube in one period time is represented, and T represents the period time of a third control signal input to the third N-channel MOS tube.
In one embodiment of the invention, the load average current input across the loadExpressed as:
；
wherein,representing the voltage input across the load,Representing the current input to the load;representing the ratio of output power to input power;
the inductive input voltage is represented by:；an inductance value representing the inductance;ripple current representing inductance expressed as。
In one embodiment of the invention, the filtered maximum current is input across the loadExpressed as:
；
wherein,as a result of the load average current,representing the ripple current of the inductor.
Compared with the prior art, the technical scheme of the invention has the following advantages:
according to the boost switching circuit, the output levels of the first control signal, the second control signal and the third control signal are adjusted through comparing the relation between the current voltage of the circuit and the preset maximum threshold value and the preset minimum threshold value, so that the on-off of the first N-channel MOS tube, the second N-channel MOS tube and the third N-channel MOS tube is controlled. The invention utilizes the first N channel MOS tube and the second N channel MOS tube to form a switch protection circuit; the two MOS tubes are turned off, and the power supply and the load are cut off; the two MOS tubes are conducted and connected with a power supply and a load. The first N-channel MOS tube is conducted, the second N-channel MOS tube is turned off, and the inductor, the second body diode and the third N-channel MOS tube form a boost circuit; the third N-channel MOS tube is driven by a square wave level signal with a preset duty ratio, so that the voltage input to a load by a power supply is ensured to be stable, the current stress is stable, the load is protected, and the working efficiency of the load is improved. According to the invention, the MOS tube switching circuit is combined with the boost circuit, the second N-channel MOS tube is multiplexed, the switching between the switching circuit and the boost circuit is realized by controlling the on-off of the MOS tube, the protection effect is realized, the output voltage is kept stable continuously, and the EMI electromagnetic interference can be reduced; the invention reduces the use of circuit components, the volume and the cost of the device by multiplexing the circuit components.
Drawings
In order that the invention may be more readily understood, a more particular description of the invention will be rendered by reference to specific embodiments thereof that are illustrated in the appended drawings, in which
FIG. 1 is a circuit diagram of a boostable switching circuit of the invention;
FIG. 2 is a flow chart of the steps of the control method of the boost switching circuit of the present invention;
FIG. 3 is a schematic circuit diagram of the boostable switching circuit of the invention when performing voltage boosting;
fig. 4 is a schematic circuit diagram of a normally-on switch circuit of the present invention.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and specific examples, which are not intended to be limiting, so that those skilled in the art will better understand the invention and practice it.
Referring to fig. 1, a circuit diagram of a boost-able switching circuit according to the present invention includes:
one end of the inductor L1 is connected with the positive electrode of the power supply;
the drain electrode of the first N-channel MOS tube Z1 is connected with the other end of the inductor, and the grid electrode of the first N-channel MOS tube Z1 inputs a first control signal;
the drain electrode of the second N-channel MOS tube Z2 is connected with the source stage of the first N-channel MOS tube, the source stage of the second N-channel MOS tube Z2 is connected with a load, and the grid electrode of the second N-channel MOS tube Z2 inputs a second control signal;
the anode of the second body diode K2 is connected with the source stage of the second N-channel MOS tube, and the cathode of the second body diode K2 is connected with the drain electrode of the second N-channel MOS tube;
a source electrode of the third N-channel MOS tube Z3 is connected with a power supply cathode, a drain electrode of the third N-channel MOS tube Z3 is connected with a source electrode of the first N-channel MOS tube, and a grid electrode of the third N-channel MOS tube Z3 inputs a third control signal; the third control signal is a square wave level signal;
the voltage sensor, its input is connected with the negative pole of second body diode, and its output is connected with MCU for compare the current voltage of gathering with the maximum threshold value and the minimum threshold value of presetting in MCU, specifically include:
when the current voltage is smaller than a minimum threshold value, the first control signal outputs a high-level signal which enables the first N-channel MOS tube to be conducted, the second control signal outputs a low-level signal, the second N-channel MOS tube is turned off, the third control signal outputs a square wave level signal with a preset duty ratio, and the third N-channel MOS tube is conducted and turned off according to a preset frequency; after the power input voltage is boosted through the inductor and the third N-channel MOS tube, the power input voltage is output to a load through a second body diode;
when the current voltage is greater than a maximum threshold value, a first control signal is enabled to output a low-level signal, the first N-channel MOS tube is turned off, and power supply for a load is cut off;
when the current voltage is not smaller than a minimum threshold value and not larger than a maximum threshold value, the first control signal and the second control signal output high-level signals which enable the first N-channel MOS tube and the second N-channel MOS tube to be conducted, the third control signal is a low-level signal, and the third N-channel MOS tube is turned off; and the power supply output voltage is output to a load through the first N-channel MOS tube and the second N-channel MOS tube to supply power to the load.
In the embodiment of the invention, the control signal which is output by the MCU and enables the N-channel MOS tube to be conducted is a high-level control signal which takes the source voltage of the N-channel MOS tube as a reference and has the voltage of 12V.
Based on the above embodiment, in this embodiment, further includes:
the anode of the first body diode K1 is connected with the source stage of the first N-channel MOS tube, and the cathode of the first body diode K1 is connected with the drain electrode of the first N-channel MOS tube;
and the anode of the third body diode K3 is connected with the source stage of the third N-channel MOS tube, and the cathode of the third body diode K3 is connected with the drain electrode of the third N-channel MOS tube.
Specifically, the power supply+ is used as input, the DC+ is used as output, the power supply-is used as a public end, the output is connected with two ends of a load, the load can be a motor or a DC/DC inverter, L1 is an inductor, Z1, Z2 and Z3 are N-channel MOS tubes, K1, K2 and K3 are in-vivo diodes of the N-channel MOS tubes Z1, Z2 and Z3 respectively, and CTRL1, CTRL2 and CTRL3 are control signals for controlling Z1, Z2 and Z3 respectively; the power supply is connected with one end of the inductor L1, the other end of the inductor L1 is connected with the drain electrode of the Z1, and the power supply is connected with the cathode of the diode K1 in the Z1 body. The source electrode of Z1 is connected with the anode of the diode K1 in the Z1 body, and is simultaneously connected with the source electrode of Z2, and is simultaneously connected with the anode of the diode K2 in the Z2 body, and is simultaneously connected with the drain electrode of Z3, and is simultaneously connected with the cathode of the diode K3 in the Z3 body. The drain electrode of Z2 and the cathode electrode of the diode K2 in the Z2 body are connected with DC+. The source electrode of the Z3 and the anode electrode of the diode K3 in the Z3 body are connected with a power supply-, the first control signal CTRL1 is connected with the grid electrode of the Z1, the second control signal CTRL2 is connected with the grid electrode of the Z2, and the third control signal CTRL3 is connected with the grid electrode of the Z3.
When the load is abnormal, the first body diode K1 and the second body diode K1 are utilized to prevent current from flowing backwards and protect the circuit based on the unidirectional conductivity of the diodes.
According to the invention, the MOS tube switching circuit is combined with the boost circuit, Z1, Z2, K1 and K2 form a protection circuit, CTRL1 and CTRL2 are control signals, and the Z1 and the Z2 are controlled to be closed and turned off. Z1 and Z2 are closed, so that connection between a power supply and a load is realized, Z1 and Z2 are disconnected, disconnection between the power supply and the load is realized, and meanwhile, reverse connection prevention is realized due to a diode in the Z2 body. The invention can realize the protection function, stabilize the output voltage, rapidly cut off the output, reduce the output current and the EMI, ensure the load to run under higher voltage, and achieve the effects of stabilizing the motor rotation speed and controlling the efficiency if the load is a motor. The two circuits are combined, and part of the circuits are multiplexed, so that the cost and the volume can be reduced.
Specifically, in the embodiment of the present invention, the models selected by the MCU include STM32F103C8T6, MSP430G2553, PIC16F15316, and MC9S08DZ60.STM32F103C8T6 is based on ARM Cortex-M kernel, has speed of 72MHz, has 37 input/output numbers, and has higher cost performance. MSP430G2553 has ultra-low power modes of operation, such as standby mode and off mode (RAM hold), which can wake up from standby mode quickly in less than 1 μs; it adopts 16-bit simplified instruction set architecture, and its instruction cycle time is only 62.5ns. The PIC16F15316 is a PIC series single chip microcomputer with 8-bit RISC instruction set, and has low price. MC9S08DZ60 uses HCS08 central processor and 40-MHz CPU, support up to 32 interrupt/reset sources; the Flash memory has a Flash memory of 60KB, an EEPROM on-line programmable memory of maximum 2K and a RAM of maximum 4 KB.
Based on the above embodiment, in this embodiment, further includes:
the temperature sensor is arranged at a preset position in the load, is in communication connection with the MCU, and is used for collecting the running temperature of the load and sending the running temperature to the MCU so as to adjust the first control signal to turn off the first N-channel MOS tube when the running temperature exceeds a preset temperature threshold;
the humidity sensor is arranged at a preset position in the load, is in communication connection with the MCU, and is used for collecting the running humidity of the load and sending the running humidity to the MCU so as to adjust the first control signal to turn off the first N-channel MOS tube when the running humidity exceeds a preset humidity threshold.
When detecting that the temperature or humidity of the load is abnormal, abnormal information is transmitted to the MCU so that the MCU sends out early warning, the first control signal is timely adjusted to be a low-level signal, the first N-channel MOS tube is turned off, power supply to the load is cut off, and dangers caused by overhigh temperature or humidity of the load are avoided.
Based on the above embodiment, the embodiment of the present invention further provides a control method based on a switch circuit capable of boosting, which is shown in fig. 2, and specifically includes:
the current voltage of the voltage sensor acquisition circuit is used for inputting the MCU and comparing with a preset maximum threshold value and a preset minimum threshold value;
if the current voltage is greater than the maximum threshold value, the MCU is utilized to adjust the first control signal to be a low-level signal, and the first N-channel MOS tube is turned off;
if the current voltage is smaller than the minimum threshold value, the MCU is utilized to adjust the first control signal to be a high-level signal for enabling the first N-channel MOS tube to be conducted, the second control signal is a low-level signal, the second N-channel MOS tube is turned off, the third control signal is a square wave level signal with a preset duty ratio, and the third N-channel MOS tube is controlled to be switched between a turned-off state and a turned-on state according to a preset frequency;
and if the current voltage is not greater than the maximum threshold value and not less than the minimum threshold value, regulating the first control signal and the second control signal to be high-level signals for enabling the first N-channel MOS tube and the second N-channel MOS tube to be conducted respectively by using the MCU, wherein the third control signal is a low-level signal, and the third N-channel MOS tube is turned off.
The preset duty cycle is expressed as:
；
representing the duty cycle of the square wave level signal input to the third N-channel MOS transistor,the turn-on time of the third N-channel MOS tube in one period time is represented, and T represents the period time of a third control signal input to the third N-channel MOS tube.
Load average current input to both ends of loadExpressed as:
；
wherein,representing the voltage input across the load,Representing the current input to the load;representing the ratio of output power to input power;
the inductive input voltage is represented by:；an inductance value representing the inductance;ripple current representing inductance expressed as。
Filtered maximum current input across loadExpressed as:
；
wherein,as a result of the load average current,representing the ripple current of the inductor.
Based on the above description, the boost circuit stabilizes the output voltage, the load average current is reduced, and the ripple current is reduced by adjusting the inductance value of the inductor, so that the hysteresis loss and EMI of the inductor can be reduced.
Specifically, referring to fig. 3, when the current voltage of the circuit is smaller than the minimum threshold, the output voltage is boosted by using the boost switch circuit provided by the invention, and the circuit is equivalent to:
one end of the inductor L1 is connected with the positive electrode of the power supply and is used for storing energy to realize boosting;
the anode of the second body diode K2 is connected with the source stage of the second N-channel MOS tube, and the cathode of the second body diode K2 is connected with the drain electrode of the second N-channel MOS tube;
a source electrode of the third N-channel MOS tube Z3 is connected with a power supply cathode, a drain electrode of the third N-channel MOS tube Z3 is connected with a source electrode of the first N-channel MOS tube, and a grid electrode of the third N-channel MOS tube Z3 inputs a third control signal; the third control signal is a square wave level signal;
the input end of the voltage sensor is connected with the cathode of the second body diode, the output end of the voltage sensor is connected with the MCU, the voltage sensor is used for comparing the acquired current voltage with a preset maximum threshold value and a preset minimum threshold value in the MCU, when the current voltage is smaller than the minimum threshold value, a first control signal is enabled to output a high level for enabling the first N-channel MOS tube to be conducted, a second control signal is enabled to output a low level, the second N-channel MOS tube is turned off, a third control signal is enabled to output a square wave level signal with a preset duty ratio, and the third N-channel MOS tube is enabled to be conducted and turned off according to preset frequency; and after the power input voltage is boosted through the inductor and the third N-channel MOS tube, the power input voltage is output to a load through the second body diode.
Specifically, referring to fig. 4, when the current voltage of the circuit is not less than the minimum threshold value and not greater than the maximum threshold value, the output voltage of the power supply is input to the load through the boost-able switching circuit provided by the invention, and the circuit is equivalent to:
one end of the inductor L1 is connected with the positive electrode of the power supply and is used for filtering alternating current components in direct current;
the drain electrode of the first N-channel MOS tube Z1 is connected with the other end of the inductor, and the grid electrode of the first N-channel MOS tube Z1 inputs a first control signal;
the drain electrode of the second N-channel MOS tube Z2 is connected with the source stage of the first N-channel MOS tube, the source stage of the second N-channel MOS tube Z2 is connected with a load, and the grid electrode of the second N-channel MOS tube Z2 inputs a second control signal;
the anode of the second body diode K2 is connected with the source stage of the second N-channel MOS tube, and the cathode of the second body diode K2 is connected with the drain electrode of the second N-channel MOS tube;
the input end of the voltage sensor is connected with the cathode of the second body diode, the output end of the voltage sensor is connected with the MCU, the voltage sensor is used for comparing the acquired current voltage with a preset maximum threshold value and a preset minimum threshold value in the MCU, when the current voltage is not smaller than the minimum threshold value and not larger than the maximum threshold value, the first control signal and the second control signal output high-level signals which enable the first N-channel MOS tube and the second N-channel MOS tube to be conducted, the third control signal is a low-level signal, and the third N-channel MOS tube is turned off; and the power supply output voltage is output to a load through the first N-channel MOS tube and the second N-channel MOS tube to supply power to the load.
According to the boost switching circuit, the output levels of the first control signal, the second control signal and the third control signal are adjusted through comparing the relation between the current voltage of the circuit and the preset maximum threshold value and the preset minimum threshold value, so that the on-off of the first N-channel MOS tube, the second N-channel MOS tube and the third N-channel MOS tube is controlled. The invention utilizes the first N channel MOS tube and the second N channel MOS tube to form a switch protection circuit; the two MOS tubes are turned off, and the power supply and the load are cut off; the two MOS tubes are conducted and connected with a power supply and a load. The first N-channel MOS tube is conducted, the second N-channel MOS tube is turned off, and the inductor, the second body diode and the third N-channel MOS tube form a boost circuit; the third N-channel MOS tube is driven by a square wave level signal with a preset duty ratio, so that the voltage input to a load by a power supply is ensured to be stable, the current stress is stable, the load is protected, and the working efficiency of the load is improved. According to the invention, the MOS tube switching circuit is combined with the boost circuit, the second N-channel MOS tube is multiplexed, the switching between the switching circuit and the boost circuit is realized by controlling the on-off of the MOS tube, the protection effect is realized, the output voltage is kept stable continuously, and the EMI electromagnetic interference can be reduced; the invention reduces the use of circuit components, the volume and the cost of the device by multiplexing the circuit components.
It will be appreciated by those skilled in the art that embodiments of the present application may be provided as a method, system, or computer program product. Accordingly, the present application may take the form of an entirely hardware embodiment, an entirely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, the present application may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
The present application is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems) and computer program products according to embodiments of the application. It will be understood that each flow and/or block of the flowchart illustrations and/or block diagrams, and combinations of flows and/or blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations and modifications of the present invention will be apparent to those of ordinary skill in the art in light of the foregoing description. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the invention.
Claims (10)
1. A boost-capable switching circuit, comprising:
one end of the inductor is connected with the positive electrode of the power supply;
the drain electrode of the first N-channel MOS tube is connected with the other end of the inductor, and the grid electrode of the first N-channel MOS tube inputs a first control signal;
the drain electrode of the second N-channel MOS tube is connected with the source stage of the first N-channel MOS tube, the source stage of the second N-channel MOS tube is connected with a load, and the grid electrode of the second N-channel MOS tube inputs a second control signal;
the anode of the second body diode is connected with the source stage of the second N-channel MOS tube, and the cathode of the second body diode is connected with the drain electrode of the second N-channel MOS tube;
the source electrode of the third N-channel MOS tube is connected with the negative electrode of the power supply, the drain electrode of the third N-channel MOS tube is connected with the source electrode of the first N-channel MOS tube, and the grid electrode of the third N-channel MOS tube inputs a third control signal; the third control signal is a square wave level signal;
the voltage sensor, its input is connected with the negative pole of second body diode, and its output is connected with MCU for compare the current voltage of gathering with the maximum threshold value and the minimum threshold value of presetting in MCU, specifically include:
when the current voltage is smaller than a minimum threshold value, the first control signal outputs a high-level signal which enables the first N-channel MOS tube to be conducted, the second control signal outputs a low-level signal, the second N-channel MOS tube is turned off, the third control signal outputs a square wave level signal with a preset duty ratio, and the third N-channel MOS tube is conducted and turned off according to a preset frequency; after the power input voltage is boosted through the inductor and the third N-channel MOS tube, the power input voltage is output to a load through a second body diode;
when the current voltage is greater than a maximum threshold value, a first control signal is enabled to output a low-level signal, the first N-channel MOS tube is turned off, and power supply for a load is cut off;
when the current voltage is not smaller than a minimum threshold value and not larger than a maximum threshold value, the first control signal and the second control signal output high-level signals which enable the first N-channel MOS tube and the second N-channel MOS tube to be conducted, the third control signal is a low-level signal, and the third N-channel MOS tube is turned off; and the power supply output voltage is output to a load through the first N-channel MOS tube and the second N-channel MOS tube to supply power to the load.
2. The boostable switching circuit of claim 1, further comprising:
and the anode of the first body diode is connected with the source stage of the first N-channel MOS tube, and the cathode of the first body diode is connected with the drain electrode of the first N-channel MOS tube.
3. The boostable switching circuit of claim 1, further comprising:
and the anode of the third body diode is connected with the source stage of the third N-channel MOS tube, and the cathode of the third body diode is connected with the drain electrode of the third N-channel MOS tube.
4. The boostable switching circuit of claim 1, further comprising:
the temperature sensor is arranged at a preset position in the load, is in communication connection with the MCU, and is used for collecting the running temperature of the load and sending the running temperature to the MCU so as to adjust the first control signal to enable the first N-channel MOS tube to be turned off when the running temperature exceeds a preset temperature threshold.
5. The boostable switching circuit of claim 1, further comprising:
the humidity sensor is arranged at a preset position in the load, is in communication connection with the MCU, and is used for collecting the running humidity of the load and sending the running humidity to the MCU so as to adjust the first control signal to enable the first N-channel MOS tube to be turned off when the running humidity exceeds a preset humidity threshold value.
6. The boost-capable switching circuit of claim 1, wherein the model of the MCU comprises STM32F103C8T6, MSP430G2553, PIC16F15316, MC9S08DZ60.
7. A control method applied to the boostable switching circuit according to any one of claims 1 to 6, characterized by comprising:
the current voltage of the voltage sensor acquisition circuit is used for inputting the MCU and comparing with a preset maximum threshold value and a preset minimum threshold value;
if the current voltage is greater than the maximum threshold value, the MCU is utilized to adjust the first control signal to be a low-level signal, and the first N-channel MOS tube is turned off;
if the current voltage is smaller than the minimum threshold value, the MCU is utilized to adjust the first control signal to be a high-level signal for enabling the first N-channel MOS tube to be conducted, the second control signal is a low-level signal, the second N-channel MOS tube is turned off, the third control signal is a square wave level signal with a preset duty ratio, and the third N-channel MOS tube is controlled to be switched between a turned-off state and a turned-on state according to a preset frequency;
and if the current voltage is not greater than the maximum threshold value and not less than the minimum threshold value, regulating the first control signal and the second control signal to be high-level signals for enabling the first N-channel MOS tube and the second N-channel MOS tube to be conducted respectively by using the MCU, wherein the third control signal is a low-level signal, and the third N-channel MOS tube is turned off.
8. The method of claim 7, wherein the preset duty cycle is expressed as:
；
representing the duty cycle of the square wave level signal input to the third N-channel MOS transistor, +.>The turn-on time of the third N-channel MOS tube in one period time is represented, and T represents the period time of a third control signal input to the third N-channel MOS tube.
9. The boostable switching circuit of claim 8, wherein the average current of the load is input across the loadExpressed as:
；
wherein,representing the voltage input across the load,/->Representing the current input to the load; />Representing the ratio of output power to input power;
the inductive input voltage is represented by: />；/>An inductance value representing the inductance;ripple current representing inductance, expressed as +.>。
10. The method of claim 9, wherein the maximum current of the filter is input to both ends of the loadExpressed as:
；
wherein,for load average current +.>Representing the ripple current of the inductor.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103187854A (en) * | 2011-12-31 | 2013-07-03 | 意法半导体研发(深圳)有限公司 | System and method for controlling DCM-CCM (direct current main-coincident current memory) oscillation in power converter |
| TWM580822U (en) * | 2019-03-28 | 2019-07-11 | 群光電能科技股份有限公司 | Smart boost circuit |
| CN113746328A (en) * | 2021-09-08 | 2021-12-03 | 广州金升阳科技有限公司 | Power-down holding circuit and control method |
| CN218162217U (en) * | 2022-09-08 | 2022-12-27 | 广东好太太科技集团股份有限公司 | Boost drive circuit, main control board and airing machine |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103187854A (en) * | 2011-12-31 | 2013-07-03 | 意法半导体研发(深圳)有限公司 | System and method for controlling DCM-CCM (direct current main-coincident current memory) oscillation in power converter |
| TWM580822U (en) * | 2019-03-28 | 2019-07-11 | 群光電能科技股份有限公司 | Smart boost circuit |
| CN113746328A (en) * | 2021-09-08 | 2021-12-03 | 广州金升阳科技有限公司 | Power-down holding circuit and control method |
| CN218162217U (en) * | 2022-09-08 | 2022-12-27 | 广东好太太科技集团股份有限公司 | Boost drive circuit, main control board and airing machine |
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