CN117059547A - Wafer in-place level detection and adjustment method and detection device - Google Patents

Wafer in-place level detection and adjustment method and detection device Download PDF

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Publication number
CN117059547A
CN117059547A CN202311189512.2A CN202311189512A CN117059547A CN 117059547 A CN117059547 A CN 117059547A CN 202311189512 A CN202311189512 A CN 202311189512A CN 117059547 A CN117059547 A CN 117059547A
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distance value
wafer
measured
detected
calibration
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田洪涛
周庆亚
王嘉琪
史霄
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Beijing Jingyi Precision Technology Co ltd
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Beijing Jingyi Precision Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

The invention discloses a wafer in-place level detection and adjustment method and a detection device. The calibration distance value D0 is obtained by placing the calibration wafer on a station of the detection device, then the wafer to be detected is placed on the device to be detected, the first distance value to be detected D1, the second distance value to be detected D2 and the third distance value to be detected D3 are obtained through processing of the signal processing unit, the first distance value to be detected D1, the second distance value to be detected D2 and the third distance value to be detected D3 are compared with the calibration distance value D0, the in-place state, the warping state and the collapsing state of the wafer to be detected are obtained, and the wafer to be detected is accurately adjusted according to the in-place state, the warping state and the collapsing state, so that the wafer to be detected is horizontally installed on the station. The wafer in-place level detection and adjustment method provided by the invention can accurately detect the warping or collapsing position of the wafer, and simultaneously detect whether the wafer is installed in place or not, so that the wafer is ensured to be accurately and horizontally installed on a station of the detection device.

Description

Wafer in-place level detection and adjustment method and detection device
Technical Field
The invention relates to the technical field of semiconductor detection, in particular to a wafer in-place level detection and adjustment method and a detection device.
Background
Semiconductor devices are electronic circuits formed by performing photolithography, etching, various chemical deposition and planarization processes on a wafer (silicon wafer). In the integrated circuit processing technology, spin-drying after wafer cleaning is a very important process, in the spin-drying technology, the wafer is clamped and fixed and rotates at a high speed, meanwhile, cleaning liquid is sprayed on the surface of the wafer, and then the cleaning liquid on the surface of the wafer is removed by utilizing centrifugal force. The wafer needs to be kept horizontal during the removal of the cleaning liquid. Firstly, prevent that the wafer from taking place the damage when rotatory at a high speed, secondly, avoid remaining granule to produce secondary damage to the wafer surface in the in-process that is got rid of by the washing liquid.
In the prior art, a laser correlation mode is mostly adopted to perform horizontal detection on a wafer, laser is emitted from a first emitting end, a first receiving end performs data receiving, laser is emitted from a second emitting end, the second receiving end performs data receiving, when the first receiving end and the second receiving end simultaneously receive data signals, the wafer is indicated to have no warpage, the posture is horizontal, and when any one of the first receiving end and the second receiving end receives signals in a delayed or non-horizontal state, the wafer is indicated to be in a non-horizontal state.
In the prior art, whether the wafer is horizontal or not is judged and detected, the warping direction cannot be accurately calculated, namely, the horizontal degree of the wafer cannot be accurately detected, and the wafer horizontal adjustment is not facilitated.
Disclosure of Invention
Therefore, the technical problem to be solved by the invention is to overcome the defects that the wafer cannot be matched with the horizontal detection device due to the installation error when the wafer is installed on the horizontal detection device in the prior art, and the horizontal detection error and the warping degree of the wafer cannot be detected when the wafer is subjected to horizontal detection, so that the wafer in-place horizontal detection adjustment method and the wafer in-place horizontal detection device capable of improving the levelness of the wafer are provided.
In order to solve the technical problems, the technical scheme of the invention is as follows:
the wafer in-place level detection and adjustment method comprises the following steps:
placing a calibration wafer on a station of a detection device, and calibrating a horizontal state;
the method comprises the steps that a beam generator emits at least three non-collinear ranging beams to a calibration wafer, reflected optical signals are converted into electric signals, a signal processing unit receives the three optical signals and converts the three optical signals into a first distance value, a second distance value and a third distance value, average values of the first distance value, the second distance value and the third distance value are obtained, and the average values are recorded as a calibration distance value D0;
placing a wafer to be detected on a detection device, transmitting a first ranging beam, a second ranging beam and a third ranging beam to the wafer to be detected by a beam generator, and respectively obtaining a first distance value to be detected D1, a second distance value to be detected D2 and a third distance value to be detected D3 by a signal processing unit, wherein the first ranging beam corresponds to the first distance value to be detected D1, the second ranging beam corresponds to the second distance value to be detected D2, and the third ranging beam corresponds to the third distance value to be detected D3;
comparing and evaluating the first distance value D1 to be measured, the second distance value D2 to be measured and the third distance value D3 to be measured with the calibration distance value D0 to obtain an in-place state, a warping state or a collapse state of the wafer to be measured;
and adjusting the wafer to be tested according to the in-place state, the warping state or the collapsing state so that the wafer to be tested is horizontally installed in the station.
According to some embodiments of the invention, the in-place state comprises:
the station state is not entered, the first distance value to be measured D1, the second distance value to be measured D2 and the third distance value to be measured D3 are smaller than the calibration distance value D0, and the wafer to be measured is positioned above the station;
the collapse station state, wherein the first distance value to be measured D1, the second distance value to be measured D2 and the third distance value to be measured D3 are all larger than the calibration distance value D0, and the wafer to be measured is collapsed into the station;
in a horizontal in-place state, the first distance value to be measured D1, the second distance value to be measured D2 and the third distance value to be measured D3 are equal to the calibration distance value D0, or the differences among the first distance value to be measured D1, the second distance value to be measured D2, the third distance value to be measured D3 and the calibration distance value D0 are all within a calibration error range, and the wafer to be measured is horizontally installed on a station;
and in a vacant state, the first distance value to be measured D1, the second distance value to be measured D2 and the third distance value to be measured D3 are all larger than twice the calibration distance value D0, and the wafer to be measured is not installed on the station.
According to some embodiments of the invention, the warp state comprises:
the first warping state, wherein the first distance value D1 to be detected is the minimum value, the first distance value D1 to be detected is smaller than the calibration distance value D0, the second distance value D2 to be detected and the third distance value D3 to be detected are both larger than or equal to the calibration distance value D0, the wafer to be detected is positioned above the station, and warping occurs at one side close to the first ranging beam;
the second warping state, the second distance value D2 to be detected is the minimum value, the second distance value D2 to be detected is smaller than the calibration distance value D0, the first distance value D1 to be detected and the third distance value D3 to be detected are both larger than or equal to the calibration distance value D0, the wafer to be detected is located above the station, and warping occurs at one side close to the second ranging beam;
the third warping state, the third distance value D3 to be measured is the minimum value, the third distance value D3 to be measured is smaller than the calibration distance value D0, the first distance value D1 to be measured and the second distance value D2 to be measured are all greater than or equal to the calibration distance value D0, the wafer to be measured is located above the station, and warping occurs at one side close to the third ranging beam.
According to some embodiments of the invention, the collapsed state comprises:
the first collapse state, the first distance value D1 to be detected is the minimum value, the first distance value D1 to be detected is smaller than the calibration distance value D0, the difference between the first distance value D1 to be detected and the calibration distance value D0 exceeds the calibration error range, the second distance value D2 to be detected and the third distance value D3 to be detected are both larger than the calibration distance value D0, the difference between the second distance value D2 to be detected, the third distance value D3 to be detected and the calibration distance value D0 exceeds the calibration error range, the wafer to be detected is warped near one side of the first distance beam, and the wafer to be detected is collapsed far from one side of the first distance beam;
the second collapse state, the second distance value D2 to be detected is a detection minimum value, the second distance value D2 to be detected is smaller than the calibration distance value D0, the difference between the second distance value D2 to be detected and the calibration distance value D0 exceeds the calibration error range, the first distance value D1 to be detected and the third distance value D3 to be detected are both larger than the calibration distance value D0, the difference between the first distance value D1 to be detected, the third distance value D3 to be detected and the calibration distance value D0 exceeds the calibration error range, one side of the wafer to be detected, which is close to the second distance beam, is warped, and one side of the wafer to be detected, which is far away from the second distance beam, is collapsed;
the third collapse state, the third distance value D3 to be measured is the minimum value, the third distance value D3 to be measured is smaller than the calibration distance value D0, the difference between the third distance value D3 to be measured and the calibration distance value D0 exceeds the calibration error range, the second distance value D2 to be measured and the first distance value D1 to be measured are both greater than the calibration distance value D0, the difference between the second distance value D2 to be measured and the first distance value D1 to be measured exceeds the calibration error range, the wafer to be measured is close to one side of the third distance beam and is warped, and the wafer to be measured is far away from one side of the third distance beam and collapses.
According to some embodiments of the invention, the calibration error ranges from-0.1 mm to 0.1mm.
The invention also provides a wafer in-place level detection device, which is applied to the wafer in-place level detection and adjustment method, and comprises the following steps: the device comprises a detection table, a light beam generator and a signal processing unit, wherein a station is arranged on the detection table and is suitable for placing a wafer; the beam generator is arranged on one side of the surface of the wafer and is positioned above the wafer, and the beam generator is suitable for emitting at least three ranging beams to the surface of the wafer and converting the emitted back optical signals into optical signals; the signal processing unit is in communication with the light beam generator, and is adapted to receive the light signal for conversion to a distance value.
According to some embodiments of the invention, the beam generator is an infrared beam generator.
According to some embodiments of the invention, the beam generator is located on the same axis as the center of the wafer.
According to some embodiments of the invention, the three ranging beams form an equilateral triangle with a focal line of the wafer surface.
According to some embodiments of the invention, the wafer in-place level detection apparatus further comprises at least one clamping mechanism provided on the detection stage.
The technical scheme of the invention has the following advantages:
1. according to the wafer in-place level detection and adjustment method provided by the invention, the calibration wafer is placed on a station of the detection device, the light beam generator emits a ranging light beam to the calibration wafer and obtains a calibration distance value D0 through the signal processing unit, then the wafer to be detected is placed on the device to be detected, the first ranging light beam, the second ranging light beam and the third ranging light beam are emitted to the wafer to be detected through the light beam generator, the first distance value D1 to be detected, the second distance value D2 to be detected and the third distance value D3 to be detected are obtained through the signal processing unit, and the first distance value D1 to be detected, the second distance value D2 to be detected and the third distance value D3 to be detected are compared with the calibration distance value D0, so that an in-place state, a warping state and a collapsing state of the wafer to be detected are obtained, and the wafer to be detected is accurately adjusted according to the in-place state, the warping state and the collapsing state, so that the wafer to be detected is horizontally installed on the station. The wafer in-place level detection and adjustment method provided by the invention can accurately detect the warping or collapsing position of the wafer, and simultaneously detect whether the wafer is installed in place or not, so that the wafer is ensured to be accurately and horizontally installed on a station of the detection device.
2. The invention provides a wafer in-place level detection device, wherein a detection table provides a mounting foundation for detecting a wafer, a beam generator is suitable for transmitting at least three ranging beams to the surface of the wafer and converting the transmitted light signals into electric signals, and a signal processing unit is in communication connection with the beam generator and receives the electric signals transmitted by the beam generator and converts the electric signals into distance values. And comparing the measured distance value with the calibration distance value to obtain the position and degree of warping and collapsing of the wafer, and providing data reference for subsequent adjustment of the wafer so as to ensure that the wafer can be horizontally installed on a station.
3. The wafer in-place level detection device provided by the invention selects the infrared beam generator as the beam generator, and before the wafer is spin-dried, the cleaning liquid remained in a process link remains on the wafer. The laser is greatly influenced by liquid refraction, and when more liquid remains on the wafer and liquid water drops are large, the problem that a receiving end cannot normally receive signals can occur, so that the wafer is misjudged to be horizontal. Since the wavelength of far infrared light is long, the absorption of liquid to far infrared light is small, so that the penetrability of far infrared light to liquid is strong. According to the characteristics, the far infrared distance meter is used for reading signals, so that the influence of liquid on the signals is greatly reduced, and the aim of accurately reading results is fulfilled.
4. According to the wafer in-place level detection device, the clamping mechanism is arranged on the detection table and used for adjusting the installation position of the wafer on the station so as to ensure that the wafer is horizontally installed on the station.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a wafer to be tested in a state of not entering a station according to some embodiments of the present invention;
fig. 2 is a statistical diagram of comparison between a first distance value D1 to be measured, the second distance value D2 to be measured, and the third distance value D3 to be measured and a calibration distance value D0 when a wafer to be measured is not in a station state according to some embodiments of the present invention;
FIG. 3 is a schematic diagram of a wafer to be tested in a collapse station state according to some embodiments of the present invention;
FIG. 4 is a statistical diagram showing the comparison of the first measured distance D1, the second measured distance D2, and the third measured distance D3 with the calibration distance D0 in the state of the collapse station of the wafer to be measured according to some embodiments of the present invention;
FIG. 5 is a schematic diagram of a wafer under test in a horizontal in-place state according to some embodiments of the present invention;
FIG. 6 is a statistical diagram showing the comparison of the first measured distance D1, the second measured distance D2, and the third measured distance D3 with the calibration distance D0 when the wafer to be measured is in place according to some embodiments of the present invention;
FIG. 7 is a schematic diagram of a wafer to be tested in a vacancy state according to some embodiments of the present invention;
FIG. 8 is a statistical diagram showing the comparison of the first measured distance D1, the second measured distance D2, and the third measured distance D3 with the calibration distance D0 in the vacancy state of the wafer according to some embodiments of the present invention;
FIG. 9 is a schematic diagram of a first warp status of a wafer under test according to some embodiments of the present invention;
FIG. 10 is a statistical diagram showing the comparison of the first measured distance D1, the second measured distance D2, and the third measured distance D3 with the calibration distance D0 in the first warpage state of the wafer according to some embodiments of the present invention;
FIG. 11 is a schematic diagram illustrating a first collapse state of a wafer under test according to some embodiments of the present invention;
fig. 12 is a statistical diagram showing a comparison of the first distance value D1, the second distance value D2, and the third distance value D3 with the calibration distance value D0 in the first collapse state of the wafer under test according to some embodiments of the present invention.
Reference numerals illustrate: 1. a light beam generator; 2. a wafer to be tested; 3. and a clamping mechanism.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
The invention provides a wafer in-place level detection and adjustment method, which comprises the following steps:
placing a calibration wafer on a station of a detection device, and calibrating a horizontal state;
the light beam generator 1 emits at least three non-collinear ranging light beams to the calibration wafer, converts the reflected light signals into electric signals, and the signal processing unit receives the three light signals and converts the three light signals into a first distance value, a second distance value and a third distance value, averages the first distance value, the second distance value and the third distance value and records the average value as a calibration distance value D0;
specifically, the calibration distance value D0 is obtained by detecting the calibration wafer, and since the calibration wafer is in a horizontal state, the first distance value, the second distance value, and the third distance value are equal to the calibration distance value D0., and the calibration distance value is used as a reference to evaluate the horizontal degree of the wafer 2 to be measured.
Placing the wafer 2 to be measured on a detection device, and transmitting a first ranging beam, a second ranging beam and a third ranging beam to the wafer 2 to be measured by the beam generator 1, and respectively obtaining a first distance value D1 to be measured, a second distance value D2 to be measured and a third distance value D3 to be measured by the signal processing unit, wherein the first ranging beam corresponds to the first distance value D1 to be measured, the second ranging beam corresponds to the second distance value D2 to be measured, and the third ranging beam corresponds to the third distance value D3 to be measured;
comparing and evaluating the first distance value D1 to be measured, the second distance value D2 to be measured and the third distance value D3 to be measured with the calibration distance value D0 to obtain an in-place state, a warping state or a collapse state of the wafer 2 to be measured;
and adjusting the wafer 2 to be tested according to the in-place state, the warping state or the collapse state so that the wafer 2 to be tested is horizontally installed in the station.
Specifically, the wafer 2 to be measured is then placed on the device to be measured, the first ranging beam, the second ranging beam and the third ranging beam are emitted to the wafer 2 to be measured through the beam generator 1, the first distance value D1 to be measured, the second distance value D2 to be measured and the third distance value D3 to be measured are obtained through processing of the signal processing unit, the first distance value D1 to be measured, the second distance value D2 to be measured and the third distance value D3 to be measured are compared with the calibration distance value D0, the in-place state, the warping state and the collapse state of the wafer 2 to be measured are obtained, and the wafer 2 to be measured is accurately adjusted according to the in-place state, the warping state and the collapse state, so that the wafer 2 to be measured is horizontally installed on the station. The wafer in-place level detection and adjustment method provided by the invention can accurately detect the warping or collapsing position of the wafer, and simultaneously detect whether the wafer is installed in place or not, so that the wafer is ensured to be accurately and horizontally installed on a station of the detection device.
According to some embodiments of the invention, the in-place state includes:
in a state of not entering a station, referring to fig. 1 and 2, the first distance value D1 to be measured, the second distance value D2 to be measured and the third distance value D3 to be measured are all smaller than the calibration distance value D0, and the wafer 2 to be measured is located above the station;
in the collapse station state, referring to fig. 3 and 4, the first distance value D1 to be measured, the second distance value D2 to be measured and the third distance value D3 to be measured are all larger than the calibration distance value D0, and the wafer 2 to be measured collapses into the station;
in a horizontal in-place state, referring to fig. 5 and 6, the first distance value D1 to be measured, the second distance value D2 to be measured and the third distance value D3 to be measured are equal to the calibration distance value D0, or the differences between the first distance value D1 to be measured, the second distance value D2 to be measured, the third distance value D3 to be measured and the calibration distance value D0 are within the calibration error range, and the wafer 2 to be measured is horizontally mounted on the station;
in the empty state, referring to fig. 7 and 8, the first distance value D1 to be measured, the second distance value D2 to be measured, and the third distance value D3 to be measured are all greater than two times of the calibration distance value D0, and the wafer 2 to be measured is not mounted on the station.
According to some embodiments of the invention, the warp state comprises:
in the first warp state, referring to fig. 9 and 10, the first distance value D1 to be measured is the detection minimum value, the first distance value D1 to be measured is smaller than the calibration distance value D0, the second distance value D2 to be measured and the third distance value D3 to be measured are both larger than or equal to the calibration distance value D0, the wafer 2 to be measured is located above the station, and warp occurs at one side close to the first ranging beam;
the second warping state, the second distance value D2 to be detected is the minimum value of detection, the second distance value D2 to be detected is smaller than the calibration distance value D0, the first distance value D1 to be detected and the third distance value D3 to be detected are both larger than or equal to the calibration distance value D0, the wafer 2 to be detected is positioned above the station, and warping occurs at one side close to the second distance measuring beam;
the third warping state, the third distance value D3 to be detected is the minimum value, the third distance value D3 to be detected is smaller than the calibration distance value D0, the first distance value D1 to be detected and the second distance value D2 to be detected are both larger than or equal to the calibration distance value D0, the wafer 2 to be detected is located above the station, and warping occurs at one side close to the third distance measuring light beam.
According to some embodiments of the invention, the collapsed state comprises:
in the first collapse state, referring to fig. 11 and 12, the first distance value D1 to be measured is the minimum value, the first distance value D1 to be measured is smaller than the calibration distance value D0, the difference between the first distance value D1 to be measured and the calibration distance value D0 exceeds the calibration error range, the second distance value D2 to be measured and the third distance value D3 to be measured are both larger than the calibration distance value D0, the difference between the second distance value D2 to be measured, the third distance value D3 to be measured and the calibration distance value D0 exceeds the calibration error range, the wafer 2 to be measured warps on the side close to the first distance beam, and the wafer 2 to be measured collapses on the side far away from the first distance beam;
the second collapse state, the second distance value D2 to be detected is the minimum detection value, the second distance value D2 to be detected is smaller than the calibration distance value D0, the difference value between the second distance value D2 to be detected and the calibration distance value D0 exceeds the calibration error range, the first distance value D1 to be detected and the third distance value D3 to be detected are both larger than the calibration distance value D0, the difference value between the first distance value D1 to be detected, the third distance value D3 to be detected and the calibration distance value D0 exceeds the calibration error range, the side, close to the second distance measuring light beam, of the wafer 2 to be detected is warped, and the side, far away from the second distance measuring light beam, of the wafer 2 to be detected is collapsed;
the third collapse state, the third distance value D3 to be measured is the detection minimum value, the third distance value D3 to be measured is smaller than the calibration distance value D0, the difference value between the third distance value D3 to be measured and the calibration distance value D0 exceeds the calibration error range, the second distance value D2 to be measured and the first distance value D1 to be measured are all larger than the calibration distance value D0, the difference value between the second distance value D2 to be measured and the first distance value D1 to be measured and the calibration distance value D0 exceeds the calibration error range, the side, close to the third distance beam, of the wafer 2 to be measured is warped, and the side, far away from the third distance beam, of the wafer 2 to be measured is collapsed.
In some embodiments of the invention, the calibration error ranges from-0.1 mm to 0.1mm.
The invention also provides a wafer in-place level detection device, which is applied to the wafer in-place level detection and adjustment method, and comprises the following steps: the device comprises a detection table, a light beam generator 1 and a signal processing unit, wherein a station is arranged on the detection table and is suitable for placing a wafer; the light beam generator 1 is arranged on one side of the surface of the wafer and is positioned above the wafer, and the light beam generator 1 is suitable for emitting at least three ranging light beams to the surface of the wafer and converting the emitted light signals into light signals; the signal processing unit is in communication with the light beam generator 1, the signal processing unit being adapted to receive the light signal for conversion into a distance value.
Specifically, the inspection station provides a mounting base for inspecting a wafer, the beam generator 1 is adapted to emit at least three ranging beams to a surface of the wafer and to convert the emitted optical signals back into electrical signals, and the signal processing unit is in communication with the beam generator 1, receives the electrical signals transmitted by the beam generator 1 and converts them into distance values. And comparing the measured distance value with the calibration distance value to obtain the position and degree of warping and collapsing of the wafer, and providing data reference for subsequent adjustment of the wafer so as to ensure that the wafer can be horizontally installed on a station.
In some embodiments of the invention, the light beam generator 1 is an infrared light beam generator 1.
Specifically, the infrared beam generator 1 is selected as the beam generator 1, and before the wafer is spin-dried, the cleaning solution remained in one process step remains on the wafer. The laser is greatly influenced by liquid refraction, and when more liquid remains on the wafer and liquid water drops are large, the problem that a receiving end cannot normally receive signals can occur, so that the wafer is misjudged to be horizontal. Since the wavelength of far infrared light is long, the absorption of liquid to far infrared light is small, so that the penetrability of far infrared light to liquid is strong. According to the characteristics, the far infrared distance meter is used for reading signals, so that the influence of liquid on the signals is greatly reduced, and the aim of accurately reading results is fulfilled.
In some embodiments of the invention, the beam generator 1 is located on the same axis as the center of the wafer.
Specifically, the beam generator 1 is mounted on the same axis as the center of the wafer, that is, the projection of the beam generator 1 is located at the center of the wafer, the beam generator 1 uses the axis as a reference, and emits at least three ranging beams at the same inclination angle, and the distance value between the intersection point of the three ranging beams and the wafer and the circle is equal.
It can be understood that the intersection point of the three ranging light beams and the wafer surface is close to the edge of the wafer, and the deviation between the acquired distance value and the calibration distance value D0 is larger because of the inclination of the wafer and the maximum swing of the edge, so that the warping position or the collapsing position of the wafer is detected more obviously.
In some embodiments of the present invention, the three ranging beams form an equilateral triangle with the focal line of the wafer surface.
Specifically, the intersections of the three ranging beams and the surface of the wafer are uniformly distributed, so that the deviation between the acquired distance value and the calibration distance value D0 is large, and whether the wafer is horizontal or not can be accurately and reliably detected.
In some embodiments of the present invention, the wafer in-place level detection apparatus further comprises at least one clamping mechanism 3, wherein the clamping mechanism 3 is disposed on the detection stage.
Specifically, by arranging the clamping mechanism 3 on the detection table, the clamping mechanism 3 is used for adjusting the mounting position of the wafer on the station so as to ensure that the wafer is horizontally mounted on the station.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the invention.

Claims (10)

1. The wafer in-place level detection and adjustment method is characterized by comprising the following steps of:
placing a calibration wafer on a station of a detection device, and calibrating a horizontal state;
the method comprises the steps that a light beam generator (1) emits at least three non-collinear ranging light beams to a calibration wafer, reflected light signals are converted into electric signals, a signal processing unit receives the three light signals and converts the three light signals into a first distance value, a second distance value and a third distance value, average values of the first distance value, the second distance value and the third distance value are obtained, and the average values are recorded as a calibration distance value D0;
placing a wafer (2) to be detected on a detection device, transmitting a first ranging beam, a second ranging beam and a third ranging beam to the wafer (2) to be detected by a beam generator (1), and respectively obtaining a first distance value D1 to be detected, a second distance value D2 to be detected and a third distance value D3 to be detected by a signal processing unit, wherein the first ranging beam corresponds to the first distance value D1 to be detected, the second ranging beam corresponds to the second distance value D2 to be detected, and the third ranging beam corresponds to the third distance value D3 to be detected;
comparing and evaluating the first distance value to be measured D1, the second distance value to be measured D2 and the third distance value to be measured D3 with the calibration distance value D0 to obtain an in-place state, a warping state or a collapse state of the wafer to be measured (2);
and adjusting the wafer (2) to be tested according to the in-place state, the warping state or the collapsing state so that the wafer (2) to be tested is horizontally installed in the station.
2. The wafer in-place level detection adjustment method of claim 1, wherein the in-place state comprises:
the first distance value D1 to be measured, the second distance value D2 to be measured and the third distance value D3 to be measured are smaller than the calibration distance value D0 when the station state is not entered, and the wafer (2) to be measured is positioned above the station;
a collapse station state, wherein the first distance value to be measured D1, the second distance value to be measured D2 and the third distance value to be measured D3 are all larger than the calibration distance value D0, and the wafer (2) to be measured is collapsed into the station;
in a horizontal in-place state, the first distance value to be measured D1, the second distance value to be measured D2 and the third distance value to be measured D3 are equal to the calibration distance value D0, or the differences among the first distance value to be measured D1, the second distance value to be measured D2, the third distance value to be measured D3 and the calibration distance value D0 are all within a calibration error range, and the wafer (2) to be measured is horizontally installed on a station;
and in a vacant state, the first distance value to be measured D1, the second distance value to be measured D2 and the third distance value to be measured D3 are all larger than twice the calibration distance value D0, and the wafer (2) to be measured is not installed on the station.
3. The wafer in-place level inspection adjustment method of claim 2, wherein the warp state comprises:
the first warping state, wherein the first distance value D1 to be detected is the minimum value, the first distance value D1 to be detected is smaller than the calibration distance value D0, the second distance value D2 to be detected and the third distance value D3 to be detected are both larger than or equal to the calibration distance value D0, and the wafer (2) to be detected is positioned above the station and warped near one side of the first ranging beam;
the second warping state, the second distance value D2 to be detected is the minimum value, the second distance value D2 to be detected is smaller than the calibration distance value D0, the first distance value D1 to be detected and the third distance value D3 to be detected are both larger than or equal to the calibration distance value D0, the wafer (2) to be detected is located above the station, and warping occurs at one side close to the second ranging beam;
the third warping state, the third distance value D3 to be measured is the minimum value, and the third distance value D3 to be measured is smaller than the calibration distance value D0, the first distance value D1 to be measured and the second distance value D2 to be measured are all greater than or equal to the calibration distance value D0, the wafer (2) to be measured is located above the station, and warping occurs at one side close to the third ranging beam.
4. The wafer in-place level inspection adjustment method of claim 3, wherein the collapse state comprises:
the first collapse state, the first distance value D1 to be detected is the minimum value, the first distance value D1 to be detected is smaller than the calibration distance value D0, the difference between the first distance value D1 to be detected and the calibration distance value D0 exceeds the calibration error range, the second distance value D2 to be detected and the third distance value D3 to be detected are both larger than the calibration distance value D0, the difference between the second distance value D2 to be detected, the third distance value D3 to be detected and the calibration distance value D0 exceeds the calibration error range, the wafer (2) to be detected warps on the side close to the first ranging beam, and the wafer (2) to be detected collapses on the side far away from the first ranging beam;
the second collapse state, the second distance value D2 to be detected is a detection minimum value, the second distance value D2 to be detected is smaller than the calibration distance value D0, the difference between the second distance value D2 to be detected and the calibration distance value D0 exceeds the calibration error range, the first distance value D1 to be detected and the third distance value D3 to be detected are both larger than the calibration distance value D0, the difference between the first distance value D1 to be detected, the third distance value D3 to be detected and the calibration distance value D0 exceeds the calibration error range, one side of the wafer (2) to be detected, which is close to the second distance beam, is warped, and one side of the wafer (2) to be detected, which is far away from the second distance beam, is collapsed;
the third collapse state, the third distance value D3 to be measured is a detection minimum value, the third distance value D3 to be measured is smaller than the calibration distance value D0, the difference between the third distance value D3 to be measured and the calibration distance value D0 exceeds the calibration error range, the second distance value D2 to be measured and the first distance value D1 to be measured are both larger than the calibration distance value D0, the difference between the second distance value D2 to be measured and the first distance value D1 to be measured exceeds the calibration error range, one side of the wafer (2) to be measured, which is close to the third distance beam, is warped, and one side of the wafer (2) to be measured, which is far away from the third distance beam, is collapsed.
5. The wafer in-place level inspection adjustment method according to any one of claims 1 to 4, wherein the calibration error is in a range of-0.1 mm to 0.1mm.
6. A wafer in-place level detection apparatus, which is applied to the wafer in-place level detection adjustment method as claimed in claims 1 to 5, comprising:
the device comprises a detection table, a first detection unit and a second detection unit, wherein a station is arranged on the detection table and is suitable for placing a wafer;
a light beam generator (1), wherein the light beam generator (1) is arranged on one side of the surface of the wafer and is positioned above the wafer, and the light beam generator (1) is suitable for emitting at least three ranging light beams to the surface of the wafer and converting the emitted light signals into light signals;
and the signal processing unit is in communication connection with the light beam generator (1) and is suitable for receiving the optical signal to be converted into a distance value.
7. Wafer in-place level detection apparatus according to claim 6, characterized in that the beam generator (1) is an infrared beam generator (1).
8. Wafer in-place level detection apparatus according to claim 7, characterized in that the beam generator (1) is located on the same axis as the center of the wafer.
9. The wafer in-place level inspection apparatus of claim 6, wherein the three ranging beams form an equilateral triangle with a focal line of the wafer surface.
10. Wafer in-place level inspection apparatus according to claim 6, further comprising at least one clamping mechanism (3), said clamping mechanism (3) being provided on said inspection table.
CN202311189512.2A 2023-09-14 2023-09-14 Wafer in-place level detection and adjustment method and detection device Pending CN117059547A (en)

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