CN117040561A - Tile type multi-beam system based on HTCC - Google Patents
Tile type multi-beam system based on HTCC Download PDFInfo
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- CN117040561A CN117040561A CN202310992060.5A CN202310992060A CN117040561A CN 117040561 A CN117040561 A CN 117040561A CN 202310992060 A CN202310992060 A CN 202310992060A CN 117040561 A CN117040561 A CN 117040561A
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- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 title claims abstract description 94
- 239000000758 substrate Substances 0.000 claims abstract description 113
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 6
- 238000003786 synthesis reaction Methods 0.000 claims abstract description 6
- 230000033228 biological regulation Effects 0.000 claims abstract description 5
- 230000010354 integration Effects 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims description 51
- 239000002184 metal Substances 0.000 claims description 51
- 230000005540 biological transmission Effects 0.000 claims description 23
- 230000017525 heat dissipation Effects 0.000 abstract description 9
- 238000004806 packaging method and process Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 3
- 210000001503 joint Anatomy 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 239000011449 brick Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
Abstract
The application discloses a tile type multi-beam system based on HTCC, which relates to the technical field of radio frequency packaging, and comprises: the antenna comprises a lower substrate assembly, an upper substrate assembly and an antenna board, wherein the lower substrate assembly is used for carrying out power division and amplitude and phase regulation on received signals by using a plurality of groups of multifunctional chips, and carrying out integration or power division on the signals through a plurality of groups of SMP connectors, a beam synthesis network and a combining chip; the upper substrate assembly is used for amplifying the final-stage signals; the lower substrate assembly is connected with the upper substrate assembly through a PIN needle interconnection structure, and the upper substrate assembly is connected with the antenna board through a connection structure. The system has the advantages of being more compact in space, more miniaturized, better in heat dissipation effect and the like.
Description
Technical Field
The application relates to the technical field of radio frequency packaging, in particular to a tile type multi-beam system based on HTCC.
Background
In active phased array systems, the transceiver component is the most indispensable part. The phased array radar commonly used at present is realized by a two-dimensional plane array during design, so that the antenna array elements are ensured to have fixed intervals and simultaneously are subjected to three-dimensional layout, and each array plane is generally composed of tens of thousands of antenna units. The cost and the corresponding index row performance on the whole radiation unit mainly come from the transceiver component part, and the advantages and disadvantages of the transceiver component directly influence the overall performance of the radar. The main architecture of the transceiver is brick type and tile type. When the frequency of the whole system is low, the whole power consumption is increased, and the realization function is less, a brick type framework is usually adopted in design. Along with the increase of frequency bands, the distance between antenna array elements is gradually reduced, and the conventional brick-type assembly gradually develops towards a tile-type mode, so that the architecture can be conveniently and longitudinally better laid out in design, and the integration level of a system is greatly improved.
At present, most adopted three-dimensional interconnection structures among different substrates are interconnected by adopting PIN needles in a mode of integrally dividing a multi-beam system and separating amplitude and phase control and beam synthesis. However, this will have a problem that the system reliability is reduced due to the separated structure, and alignment of the two separated substrates is difficult during the actual assembly process.
Disclosure of Invention
The application aims to solve the technical problem of providing a tile-type multi-beam system based on HTCC, which is small in size and good in heat dissipation.
In order to solve the technical problems, the application adopts the following technical scheme: a HTCC-based tile-type multi-beam system, comprising: the antenna comprises a lower substrate assembly, an upper substrate assembly and an antenna board, wherein the lower substrate assembly is used for carrying out power division and amplitude and phase regulation on received signals by using a plurality of groups of multifunctional chips, and carrying out integration or power division on the signals through a plurality of groups of SMP connectors, a beam synthesis network and a combining chip; the upper substrate assembly is used for amplifying the final-stage signals; the lower substrate assembly is connected with the upper substrate assembly through a PIN needle interconnection structure, and the upper substrate assembly is connected with the antenna board through a connection structure.
The further technical proposal is that: the lower substrate assembly comprises a lower HTCC substrate, wherein the upper surface and the side surface of the lower HTCC substrate are provided with first metal heat sinks, the lower surface of the lower HTCC substrate is provided with second metal heat sinks, a plurality of first grooves are formed in the first metal heat sinks, a first chip is arranged in each first groove, and the first chips are in contact with the upper surface of the lower HTCC substrate; a plurality of second grooves are formed on the second metal heat sink, and a low-frequency socket, an SMP connector and a second chip are respectively formed in the second grooves; the low-frequency socket and the SMP connector are connected with the first chip and the second chip through an interconnection structure in the lower HTCC substrate, and the first chip is connected with the lower end of the PIN needle interconnection structure through an interconnection structure in the lower HTCC substrate.
The further technical proposal is that: the input signals enter through the SMP connector, 8 paths of signals respectively pass through the one-to-two power splitters and then enter into the combiner chip part after passing through the equal electric length, the combiner chip amplifies small signals, meanwhile, the two combiner chips divide 16 paths of signals into 64 paths of signals, the 64 paths of signals respectively enter into 8-in-4-out amplitude-phase modulation chips after passing through the equal phase length, and the final 32 paths of signals are interconnected with the upper substrate assembly above through the butt strap and the PIN needle interconnection structure correspondingly matched.
The further technical proposal is that: the upper substrate assembly comprises an upper HTCC substrate, a third metal heat sink is formed on the lower surface of the upper HTCC substrate, a plurality of third grooves are formed on the third metal heat sink, a third chip is arranged in each third groove, related PINs of the third chip are connected with BGA balls on the upper surface of the upper HTCC substrate through interconnection structures in the upper HTCC substrate, and related PINs of the third chip are connected with the upper ends of the PIN needle interconnection structures through interconnection structures in the upper HTCC substrate.
The further technical proposal is that: and a PIN pinhole is formed in the metal heat sink close to the outer side of the beam system, and the PIN needle interconnection structure is positioned in the PIN pinhole.
The further technical proposal is that: the upper end of the PIN needle hole penetrates through the third metal heat sink, the lower end of the PIN needle hole penetrates through the first metal heat sink, the PIN needle interconnection structure comprises a PIN needle, the PIN needle is positioned in the PIN needle hole, the upper end of the PIN needle extends to the top of the PIN needle hole and is inserted into the upper HTCC substrate, the upper end of the PIN needle is connected with a transmission line in the upper HTCC substrate, and the upper part of the PIN needle hole is not contacted with the third metal heat sink; the lower end of the PIN needle is connected with one end of the PCB butt strap, the other end of the PCB butt strap transversely penetrates through the second metal heat sink and then extends to the lower surface of the lower HTCC substrate, the lower end of the PIN needle is connected with a transmission line in the lower HTCC substrate through a transmission line on the surface of the lower end of the PIN needle, and a medium sleeve is arranged between the lower part of the PIN needle and the first metal heat sink.
The further technical proposal is that: the first chip comprises an amplitude-phase multifunctional chip, the second chip comprises a combiner chip, and the third chip comprises an amplifier chip; when the tile-type multi-beam system works, signals are transmitted to the front end of the combiner chip through the SMP connector, the combiner chip transmits the signals to the amplitude-phase multifunctional chip through the transmission line in the lower HTCC substrate, the amplitude-phase multifunctional chip transmits the signals to the amplifier chip through the PIN needle interconnection structure and the transmission line in the upper HTCC substrate, and the amplifier signal is transmitted to the antenna board after being processed.
The beneficial effects of adopting above-mentioned technical scheme to produce lie in: in the system, two HTCC substrates are adopted, in a fixed area, a lower HTCC substrate is responsible for carrying out power division and amplitude and phase regulation and control on received signals by using a plurality of groups of multifunctional chips, and signals are integrated or divided by a plurality of groups of SMP joints, a beam synthesis network and a combining chip, and an upper HTCC substrate is responsible for amplifying final-stage signals, and meanwhile, corresponding metal structures are designed in design, and meanwhile, the functions of chip heat dissipation, HTCC substrate structural support and the like are realized.
The multi-beam system can integrate 32 paths of signal combination, signal amplitude-phase control, power supply conversion and the like into one HTCC ceramic substrate. A plurality of metal heat sink structures are designed, so that the integral heat dissipation of the system can be ensured while the integral fixation of the system is realized. The phase consistency of the radio frequency signals is realized in the HTCC ceramic structure, and the matched components do not need to be subjected to phase compensation. By using a PIN interconnect structure, the structure can realize radio frequency signal transmission between different HTCC substrates. The whole structure is more compact in space and more miniaturized through the design.
Drawings
The application will be described in further detail with reference to the drawings and the detailed description.
FIG. 1 is a schematic diagram of a system according to an embodiment of the present application;
FIG. 2 is a schematic diagram of a system according to an embodiment of the application;
FIG. 3 is a schematic cross-sectional view of a system according to an embodiment of the application;
FIG. 4 is a schematic diagram of a connection structure between an upper HTCC substrate and a PIN needle as well as between the upper HTCC substrate and a chip in an embodiment of the application;
FIG. 5 is a schematic diagram of a connection structure between an upper HTCC substrate and a PIN needle as well as between the upper HTCC substrate and a chip in an embodiment of the application;
FIG. 6 is a schematic diagram of the connection structure between the PIN needle and the upper HTCC substrate and between the PIN needle and the lower HTCC substrate in the embodiment;
wherein: 1. an antenna board; 2. a lower HTCC substrate; 3. a first metal heat sink; 4. a second metal heat sink; 5. a first groove; 6. a first chip; 7. a second groove; 8. a low frequency socket; 9. an SMP linker; 10. a second chip; 11. a first cover plate; 12. an upper HTCC substrate; 13. a third metal heat sink; 14. a third groove; 15. a third chip; 16. BGA balls; 17. PIN pinholes; 18. a PIN needle; 19. a PCB board; 20. a media sleeve; 21. and a second cover plate.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, but the present application may be practiced in other ways other than those described herein, and persons skilled in the art will readily appreciate that the present application is not limited to the specific embodiments disclosed below.
As shown in fig. 1-3, an embodiment of the present application discloses a tile-type multi-beam system based on HTCC, including: a lower substrate assembly, an upper substrate assembly, and an antenna board 1. The lower substrate component is used for performing power division and amplitude and phase regulation and control on received signals by using a plurality of groups of multifunctional chips, and integrating or performing power division on the signals through a plurality of groups of SMP connectors, a beam synthesis network and a combining chip; the upper substrate assembly is used for amplifying the final-stage signals; the lower substrate assembly is connected with the upper substrate assembly through a PIN needle interconnection structure, and the upper substrate assembly is connected with the antenna board 1 through a connection structure. Furthermore, the structure adopts a BGA mode to realize interconnection of the antenna board and the upper substrate assembly, so that the minimum loss of radio frequency signals is realized, and meanwhile, the whole structure is ensured to have good heat dissipation.
Further, as shown in fig. 3, 5 and 6, in the system of the present application, the lower substrate assembly includes a lower HTCC substrate 2, the lower HTCC substrate 2 has a multi-layer HTCC structure, a first metal heat sink 3 is disposed on an upper surface and a side surface of the lower HTCC substrate 2, a second metal heat sink 4 is disposed on a lower surface of the lower HTCC substrate 2, a plurality of first grooves 5 are formed on the first metal heat sink 3, a first chip 6 is disposed in each of the first grooves 5, the first chip 6 contacts with the upper surface of the lower HTCC substrate 2, and an upper end opening of each of the first grooves 5 is closed by a first cover plate 11; a plurality of second grooves 7 are formed on the second metal heat sink 4, and a low-frequency socket 8, an SMP joint 9 and a second chip 10 are respectively formed in the second grooves 7; the low-frequency socket 8 and the SMP connector 9 are interconnected with the first chip 6 and the second chip 10 through a transmission structure located in the lower HTCC substrate 2, and the first chip 6 is connected with the lower end of the PIN interconnection structure through a transmission structure located in the lower HTCC substrate 2.
Further, as shown in fig. 3, 4 and 6, in the system of the present application, the upper substrate assembly includes an upper HTCC substrate 12, a third metal heat sink 13 is formed on a lower surface of the upper HTCC substrate 12, a plurality of third grooves 14 are formed on the third metal heat sink 13, a third chip 15 is disposed in each third groove 14, and further, a lower end opening of the third groove 14 is closed by a second cover plate 21. The related PINs of the third chip 15 are connected with the BGA balls 16 on the upper surface of the upper HTCC substrate 12 through the transmission structures in the upper HTCC substrate 12, and the related PINs of the third chip 15 are connected with the upper ends of the PIN interconnection structures through the transmission structures in the upper HTCC substrate 12.
And a passive structure, a bare-core SMP connector low-frequency socket and the like are integrated on the front surface and the back surface of the lower HTCC substrate, so that high-density three-dimensional integration is realized. The designed metal structural part (metal heat sink) plays different roles in different positions, and the third metal heat sink 13 provides isolation space for the low-noise amplifier chip to ensure electromagnetic isolation among 32 radio frequency channels, simultaneously provides structural support for the PIN needle interconnection structure, and simultaneously guides heat generated by the low-noise amplifier to enter the first metal heat sink 2. The first metal heat sink 2 provides an isolated cavity for the lower HTCC substrate, simultaneously gives consideration to heat dissipation and structural support of the bamboo joint type PIN needles, and simultaneously the heat sink integrally surrounds the lower HTCC substrate to fix the whole structure. The second metal heat sink 4 is made of a molybdenum copper material, a whole heat dissipation plate is arranged below the second metal heat sink, the whole heat of the structure is gradually transferred to the second metal heat sink 4 by the third metal heat sink 13, and finally, the heat dissipation of the whole structure is realized through butt joint with a cold plate, and meanwhile, the corresponding frame type design of the second metal heat sink 4 is convenient for the fixing of a subsequent SMP joint and the butt joint of the cold plate.
Further, as shown in fig. 3 to 6, in the beam system, a PIN hole 17 is formed in the metal heat sink near the outside of the beam system, and the PIN interconnection structure is located in the PIN hole 17.
The upper end of the PIN hole 17 penetrates through the third metal heat sink 13, the lower end of the PIN hole 17 penetrates through the first metal heat sink 3, the PIN interconnection structure comprises a PIN 18, the PIN 18 is located in the PIN hole 17, the upper end of the PIN 18 extends to the top of the PIN hole 17 and is inserted into the upper HTCC substrate 12 and is connected with a transmission line in the upper HTCC substrate 12, and the upper part of the PIN hole 17 is not in contact with the third metal heat sink 13; the lower end of the PIN 18 is connected with one end of the PCB board 19, the other end of the PCB board 19 extends to the lower surface of the lower HTCC substrate 2 after traversing the second metal heat sink 4, and is connected with a transmission line in the lower HTCC substrate 2 through a transmission line on the surface of the lower surface, and a dielectric sleeve 20 is disposed between the lower portion of the PIN 17 and the first metal heat sink 3.
Further, the first chip 6 includes an amplitude phase multifunctional chip, the second chip 10 includes a combiner chip, and the third chip 15 includes an amplifier chip; when the tile-type multi-beam system works, signals are transmitted to the front end of the combiner chip through the SMP connector 9, the combiner chip transmits the signals to the amplitude-phase multifunctional chip through the transmission line in the lower HTCC substrate 2, the amplitude-phase multifunctional chip transmits the signals to the amplifier chip through the PIN PIN interconnection structure and the transmission line in the upper HTCC substrate 12, the amplifier signal is transmitted to the antenna board after being processed, and the specific types of the first chip 6, the second chip 10 and the third chip 15 are not limited to the types described above, so that a person skilled in the art can select correspondingly according to actual function requirements.
According to the tile type multi-beam receiving system, the HTCC substrate is arranged down, the cavity is dug on the back, meanwhile, the cavity is dug on the PIN aiming joint part of the HTCC substrate on the front and the back during design, through electromagnetic simulation, the structure has good radio frequency performance, and meanwhile, 32 paths of signals are ensured to have the same electrical length from the PIN needle to the low-noise amplifier chip and from the low-noise amplifier chip to the BGA.
The system can respectively realize the receiving and transmitting of signals when using different types of amplifiers. For 8 radio frequency signals, the phase consistency of the whole 32 radio frequency signals needs to be ensured. For the whole, the input end is connected to the front end of the combiner, the combiner is connected to the amplitude-phase multifunctional chip, the multifunctional chip is connected to the amplifier, and the amplifier is connected to the antenna end, so that good phase consistency is required to be ensured. The whole module is abutted with a dual polarized antenna with an antenna board of 4*4, so that 32 paths of signal receiving and transmitting are needed to be realized, and the function of 8-in and 32-out is realized.
On the upper HTCC substrate, low-noise amplifiers with different specifications are needed according to different receiving and transmitting requirements, and a cavity with a larger specification is designed, so that multiplexing of the cavity on the whole is facilitated, and meanwhile, the amplifiers with proper specifications are selected to realize the whole index. The radio frequency signal transmitting path is as follows: the 8 paths of radio frequency signals enter the lower HTCC substrate through the SMP connector, one path of signals is divided into two parts through the one-to-two power divider signal designed on the lower HTCC substrate, and then the signals are amplified through the combiner chip to realize one-to-four sum signal amplification, at the moment, the signals are divided into eight paths of signals, and 64 paths of signals are shared at present, meanwhile, the amplification of the signals is realized, and meanwhile, the combiner chip adopts a serial port to control the on-off of each combined path. Finally, all 64 paths of signals enter an 8-in and 4-out amplitude-phase multifunctional chip through an equal-phase path, and beam distribution is carried out on the signals through a serial port. For the upper HTCC substrate, the power part is concentrated, and meanwhile, the design of separating the combining chip from the low-noise amplifying chip is convenient, so that the combiner chip and the amplifier chip are close to a heat sink, and the heat dissipation of the whole structure is convenient. On the other hand, designing a new structure of ceramic can provide enough layout space for the amplifier to the antenna end to achieve phase consistency.
Claims (10)
1. A HTCC-based tile-type multi-beam system, comprising: the antenna comprises a lower substrate assembly, an upper substrate assembly and an antenna board (1), wherein the lower substrate assembly is used for carrying out power division and amplitude and phase regulation on received signals by using a plurality of groups of multifunctional chips, and carrying out integration or power division on the signals through a plurality of groups of SMP connectors, a beam synthesis network and a combiner chip; the upper substrate assembly is used for amplifying the final-stage signals; the lower substrate assembly is connected with the upper substrate assembly through a PIN needle interconnection structure, and the upper substrate assembly is connected with the antenna board (1) through a connection structure.
2. The HTCC-based tile multi-beam system of claim 1, wherein: the lower substrate assembly comprises a lower HTCC substrate (2), wherein first metal heat sinks (3) are arranged on the upper surface and the side surface of the lower HTCC substrate (2), second metal heat sinks (4) are arranged on the lower surface of the lower HTCC substrate (2), a plurality of first grooves (5) are formed in the first metal heat sinks (3), a first chip (6) is arranged in each first groove (5), and the first chip (6) is in contact with the upper surface of the lower HTCC substrate (2); a plurality of second grooves (7) are formed on the second metal heat sink (4), and a low-frequency socket (8), an SMP connector (9) and a second chip (10) are respectively formed in the second grooves (7); the low-frequency socket (8) and the SMP connector (9) are interconnected with the first chip (6) and the second chip (10) through a transmission structure in the lower HTCC substrate (2), and the first chip (6) is connected with the lower end of the PIN needle interconnection structure through the transmission structure in the lower HTCC substrate (2).
3. The HTCC based tile multi-beam system of claim 2, wherein: the input signals enter through the SMP connector (9), 8 paths of signals respectively pass through a two-way power divider and then enter into a combiner chip part after passing through the equal electric length, the combiner chip amplifies small signals, meanwhile, the two combiner chips divide 16 paths of signal power into 64 paths of signals, the 64 paths of signals respectively enter into 8-in and 4-out amplitude-phase modulation chips after passing through the equal phase length, and the final 32 paths of signals are interconnected with an upper substrate component above through a butt strap and a PIN needle interconnection structure which is correspondingly matched.
4. The HTCC based tile multi-beam system of claim 2, wherein: the upper end opening of the first groove (5) is closed by a first cover plate (11).
5. The HTCC based tile multi-beam system of claim 2, wherein: the upper substrate assembly comprises an upper HTCC substrate (12), a third metal heat sink (13) is formed on the lower surface of the upper HTCC substrate (12), a plurality of third grooves (14) are formed on the third metal heat sink (13), a third chip (15) is arranged in each third groove (14), relevant PINs of the third chip (15) are connected with BGA balls (16) on the upper surface of the upper HTCC substrate (12) through transmission structures located in the upper HTCC substrate (12), and relevant PINs of the third chip (15) are connected with the upper ends of the PIN needle interconnection structures through transmission structures located in the upper HTCC substrate (12).
6. The HTCC based tile multi-beam system of claim 5, wherein: the lower end opening of the third groove (14) is closed by a second cover plate (21).
7. The HTCC based tile multi-beam system of claim 2, wherein: a PIN pinhole (17) is formed in the metal heat sink close to the outer side of the beam system, and the PIN needle interconnection structure is positioned in the PIN pinhole (17).
8. The HTCC based tile multi-beam system of claim 7, wherein: the upper end of the PIN needle hole (17) penetrates through the third metal heat sink (13), the lower end of the PIN needle hole (17) penetrates through the first metal heat sink (3), the PIN needle interconnection structure comprises a PIN needle (18), the PIN needle (18) is located in the PIN needle hole (17), the upper end of the PIN needle (18) extends to the top of the PIN needle hole (17) and is inserted into the upper HTCC substrate (12) to be connected with a transmission line in the upper HTCC substrate (12), and the upper part of the PIN needle hole (17) is not contacted with the third metal heat sink (13); the lower extreme of PIN needle (18) is connected with one end of PCB strap (19), after the other end of PCB strap (19) is horizontal to pass behind second metal heat sink (4), extend to lower HTCC base plate (2) lower surface department to through the transmission line of its surface with be connected with the transmission line in HTCC base plate (2) down, the lower part of PIN needle (17) with be provided with dielectric sleeve (20) between first metal heat sink (3).
9. The HTCC based tile multi-beam system of claim 7, wherein: the upper substrate component is connected with the antenna board (1) through BGA balls (16).
10. The HTCC based tile multi-beam system of claim 7, wherein: the first chip (6) comprises a multi-functional chip in the amplitude phase, the second chip (10) comprises a combiner chip, and the third chip (15) comprises an amplifier chip; when the tile-type multi-beam system works, signals are transmitted to the front end of the combiner chip through the SMP connector (9), the combiner chip transmits the signals to the amplitude-phase multifunctional chip through the transmission line inside the lower HTCC substrate (2), the amplitude-phase multifunctional chip transmits the signals to the amplifier chip through the PIN needle interconnection structure and the transmission line inside the upper HTCC substrate (12), and the amplifier signals are transmitted to the antenna board after being processed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202310992060.5A CN117040561B (en) | 2023-08-08 | 2023-08-08 | Tile type multi-beam system based on HTCC |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310992060.5A CN117040561B (en) | 2023-08-08 | 2023-08-08 | Tile type multi-beam system based on HTCC |
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| CN117040561B CN117040561B (en) | 2024-04-19 |
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| CN105514566A (en) * | 2015-12-07 | 2016-04-20 | 中国电子科技集团公司第十研究所 | Millimeter wave tile-type phased-array antenna TR module |
| CN105914476A (en) * | 2016-05-20 | 2016-08-31 | 中国电子科技集团公司第十研究所 | Ka-band tilt-structure active phased array antenna |
| CN111541002A (en) * | 2020-03-30 | 2020-08-14 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Missile-borne communication system active phased array antenna |
| CN111541470A (en) * | 2020-04-16 | 2020-08-14 | 中国电子科技集团公司第五十四研究所 | High density integrated multi-beam tile assembly |
| WO2022103402A1 (en) * | 2020-11-13 | 2022-05-19 | Viasat, Inc. | Integrated antenna array with beamformer ic chips having multiple surface interfaces |
| WO2022227763A1 (en) * | 2021-04-29 | 2022-11-03 | 成都天锐星通科技有限公司 | Multi-beam chip integration module and phased array system |
| CN113594154A (en) * | 2021-06-16 | 2021-11-02 | 北京无线电测量研究所 | Radio frequency transceiving front end packaging structure and system |
| CN114614275A (en) * | 2022-05-11 | 2022-06-10 | 成都锐芯盛通电子科技有限公司 | HTCC dual-beam tile-type airtight SIP module |
| CN114975291A (en) * | 2022-05-23 | 2022-08-30 | 石家庄烽瓷电子技术有限公司 | HTCC-based integrated multi-beam receiving system |
| CN115225114A (en) * | 2022-07-11 | 2022-10-21 | 北京航天科工世纪卫星科技有限公司 | Missile-borne frequency hopping communication system omnidirectional electric scanning radio frequency assembly |
| CN115881663A (en) * | 2023-01-16 | 2023-03-31 | 成都华兴大地科技有限公司 | Novel high-power tile type TR module |
| CN116545466A (en) * | 2023-07-04 | 2023-08-04 | 成都锐芯盛通电子科技有限公司 | High-power tile type TR component |
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