CN117038533B - Regulator and semiconductor processing equipment - Google Patents

Regulator and semiconductor processing equipment Download PDF

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Publication number
CN117038533B
CN117038533B CN202311298650.4A CN202311298650A CN117038533B CN 117038533 B CN117038533 B CN 117038533B CN 202311298650 A CN202311298650 A CN 202311298650A CN 117038533 B CN117038533 B CN 117038533B
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CN
China
Prior art keywords
valve plate
regulator
shaft
transmission channel
annular valve
Prior art date
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Active
Application number
CN202311298650.4A
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Chinese (zh)
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CN117038533A (en
Inventor
庄佳伟
卢浩
朱德连
刘磊
郭颂
钱俊
朱小庆
许开东
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Jiangsu Leuven Instruments Co Ltd
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Jiangsu Leuven Instruments Co Ltd
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Priority to CN202311298650.4A priority Critical patent/CN117038533B/en
Publication of CN117038533A publication Critical patent/CN117038533A/en
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Publication of CN117038533B publication Critical patent/CN117038533B/en
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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K3/00—Gate valves or sliding valves, i.e. cut-off apparatus with closing members having a sliding movement along the seat for opening and closing
    • F16K3/02—Gate valves or sliding valves, i.e. cut-off apparatus with closing members having a sliding movement along the seat for opening and closing with flat sealing faces; Packings therefor
    • F16K3/04—Gate valves or sliding valves, i.e. cut-off apparatus with closing members having a sliding movement along the seat for opening and closing with flat sealing faces; Packings therefor with pivoted closure members
    • F16K3/06—Gate valves or sliding valves, i.e. cut-off apparatus with closing members having a sliding movement along the seat for opening and closing with flat sealing faces; Packings therefor with pivoted closure members in the form of closure plates arranged between supply and discharge passages
    • F16K3/08—Gate valves or sliding valves, i.e. cut-off apparatus with closing members having a sliding movement along the seat for opening and closing with flat sealing faces; Packings therefor with pivoted closure members in the form of closure plates arranged between supply and discharge passages with circular plates rotatable around their centres
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K27/00—Construction of housing; Use of materials therefor
    • F16K27/04—Construction of housing; Use of materials therefor of sliding valves
    • F16K27/044—Construction of housing; Use of materials therefor of sliding valves slide valves with flat obturating members
    • F16K27/045—Construction of housing; Use of materials therefor of sliding valves slide valves with flat obturating members with pivotal obturating members
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K3/00—Gate valves or sliding valves, i.e. cut-off apparatus with closing members having a sliding movement along the seat for opening and closing
    • F16K3/30—Details
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K31/00—Actuating devices; Operating means; Releasing devices
    • F16K31/02—Actuating devices; Operating means; Releasing devices electric; magnetic
    • F16K31/04—Actuating devices; Operating means; Releasing devices electric; magnetic using a motor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber

Abstract

The invention discloses a regulator, which comprises a main body and a valve plate; the main body is provided with a transmission channel for conveying plasma; the valve plate can be movably arranged on the main body, and the valve plate is positioned in the transmission channel; the valve plate is used for adjusting the open area of the transmission channel during the movement. In the regulator, the valve plate is arranged in the transmission channel of the main body, and the valve plate can regulate the open area of the transmission channel in the moving process, so that the quantity and the density of plasmas passing through the transmission channel in unit time are regulated, and the pursuit of the full window process on the etching rate and the uniformity is met. The invention also discloses semiconductor processing equipment applying the regulator, which meets the pursuit of the full window technology on etching rate and uniformity.

Description

Regulator and semiconductor processing equipment
Technical Field
The invention relates to the technical field of semiconductor processing equipment, in particular to a regulator and also relates to semiconductor processing equipment using the regulator.
Background
In the existing semiconductor processing equipment, a plasma source cavity is communicated with a reaction cavity through an adapter, and the adapter is provided with a transmission channel for conveying plasma to the reaction cavity. As shown in fig. 1, the semiconductor processing apparatus for performing an etching photoresist removing process includes a solid state microwave source 01, a plasma source chamber 06, and a reaction chamber 05; the plasma source cavity 06 is surrounded by a microwave catheter; the solid microwave source 01 transmits microwaves to the microwave conduit through the microwave transmission waveguide 02 and the isolator 03; during operation, photoresist removing gas (comprising nitrogen and oxygen) is mixed after passing through the flowmeter and enters the plasma source cavity 06, and is dissociated into active O2-free radicals under the action of microwaves, and the active O2-free radicals enter the reaction cavity 05 after passing through the adapter block 04 so as to enable a workpiece to be processed to generate technological reaction.
However, the fixed cross-sectional area of the transfer channel of the adapter block 04 results in an upper limit on the number and density of plasmas that can pass through per unit time, which creates a limitation on the process window and cannot support a full window process.
Therefore, how to make the cross-sectional area of the transmission channel between the plasma source chamber and the reaction chamber adjustable so as to meet the pursuit of the full window process on the etching rate and uniformity is a problem to be solved by those skilled in the art.
Disclosure of Invention
In view of this, the invention provides a regulator, in which a valve plate is disposed in a transmission channel of a main body, and the valve plate can adjust an open area of the transmission channel in a moving process, so as to adjust the number and density of plasmas passing through the transmission channel in a unit time, thereby being beneficial to meeting pursuit of a full window process on etching rate and uniformity. The invention also provides semiconductor processing equipment applying the regulator, which meets the pursuit of the full window technology on etching rate and uniformity.
In order to achieve the above purpose, the present invention provides the following technical solutions:
a regulator, comprising:
a main body provided with a transmission channel for conveying plasma;
the valve plate can be movably arranged on the main body and is positioned in the transmission channel; the valve plate is used for adjusting the open area of the transmission channel in the moving process.
Optionally, in the regulator, the valve plate is rotatably mounted to the main body.
Optionally, in the regulator, the valve plates are multiple, including a central valve plate and at least one annular valve plate; each valve plate is sleeved one by one, and all the valve plates can rotate around the same axis independently.
Optionally, in the regulator, the annular valve plate is one and sleeved outside the central valve plate; the inner diameter of the annular valve plate is not smaller than the outer diameter of the central valve plate, and the outer diameter of the annular valve plate is not larger than the inner diameter of the transmission channel.
Optionally, in the regulator, the number of the annular valve plates is plural, and the inner diameter of any annular valve plate is not smaller than the outer diameter of the annular valve plate or the central valve plate sleeved in the annular valve plate; the outer diameter of any annular valve plate is not larger than the inner diameter of the annular valve plate sleeved outside the annular valve plate or not larger than the inner diameter of a transmission channel adjacent to the annular valve plate.
Optionally, in the regulator, all the valve plates are driven to rotate by the same shaft group; the shaft group comprises a plurality of shafts which are sleeved in sequence, and each shaft can independently rotate around the axis of the shaft group; the number of the shafts in the shaft group is the same as that of the valve plates, and the shafts correspond to the valve plates one by one.
Optionally, in the regulator, the shaft group comprises a central shaft and a hollow shaft sleeved outside the central shaft one by one; the central shaft is fixedly connected with the central valve plate; the hollow shafts sleeved outside the central shaft one by one are fixedly connected with the annular valve plates sleeved outside the central valve plate one by one.
Optionally, in the regulator, the valve plate and the corresponding shaft are fixedly connected by a fixing piece or welded.
Optionally, in the above regulator, the shaft group is driven to rotate by a control device, and the control device includes:
a motor for driving the shaft to rotate; the number of the motors is the same as that of the shafts in the shaft group, and the motors and the shafts are in one-to-one correspondence.
Optionally, in the above regulator, the control device further includes:
the control unit is used for receiving the communication instruction and controlling each motor according to the communication instruction;
the sensor is used for detecting the motion state of the motor and transmitting a detection result to the control unit; the number of the sensors is the same as that of the motors, and the sensors and the motors are in one-to-one correspondence.
Optionally, in the regulator, the control device further includes a housing; the motor, the control unit and the sensor are all arranged in the shell; the shell is provided with a communication port module, a signal port module and a power port module.
Optionally, in the regulator, the central valve plate is circular, and the annular valve plate is circular; the section of the transmission channel is circular.
Optionally, in the above regulator, a gap size between any of the valve plates and an adjacent valve plate along the axis direction is not greater than a preset value; the gap size between the outermost annular valve plate and the inner wall of the transmission channel along the axial direction is not larger than the preset value.
A semiconductor processing apparatus includes a plasma source chamber, a regulator, and a reaction chamber; the regulator is any one of the above technical schemes; the plasma source cavity is communicated with the reaction cavity through a transmission channel of the regulator.
Optionally, in the semiconductor processing apparatus, the cross-section outline of the plasma source cavity is the same as the outline shape and size of the outermost annular valve plate in the regulator.
The invention provides a regulator, comprising a main body and a valve plate; the main body is provided with a transmission channel for conveying plasma; the valve plate can be movably arranged on the main body, and the valve plate is positioned in the transmission channel; the valve plate is used for adjusting the open area of the transmission channel during the movement.
In the regulator, the valve plate is arranged in the transmission channel of the main body, and the valve plate can regulate the open area of the transmission channel in the moving process, so that the quantity and the density of plasmas passing through the transmission channel in unit time are regulated, and the pursuit of the full window process on the etching rate and the uniformity is met.
The invention also provides semiconductor processing equipment applying the regulator, which meets the pursuit of the full window technology on etching rate and uniformity.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of a prior art semiconductor processing apparatus;
FIG. 2 is a schematic diagram of a regulator according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a semiconductor processing apparatus according to an embodiment of the present invention;
wherein, in fig. 2-3:
a regulator 100; a main body 101; a central shaft 102; a first hollow shaft 103; a second hollow shaft 104; a hollow shaft 105; a housing 106; a control unit 107; a signal port module 108; a communication port module 109; a power port module 110; a center valve plate 111; a first annular valve plate 112; a second annular valve plate 113; an annular valve plate 114; a first motor M1; a second motor M2, a third motor M3; a first sensor S1; a second sensor S2; a third sensor S3;
a solid state microwave source 201; a microwave transmission waveguide 202; an isolator 203; flange clips 204; a fixed connection port 205; a reaction chamber 206; a stage 207; a plasma source chamber 208.
Detailed Description
The embodiment of the invention discloses a regulator, wherein a valve plate is arranged in a transmission channel of a main body of the regulator, and the valve plate can regulate the open area of the transmission channel in the moving process, so as to regulate the quantity and the density of plasmas passing through the transmission channel in unit time, thereby being beneficial to meeting the pursuit of a full window process on etching rate and uniformity. The embodiment of the invention also discloses semiconductor processing equipment applying the regulator, which meets the pursuit of the full window technology on etching rate and uniformity.
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 2, an embodiment of the present invention provides a regulator 100, including a main body 101 and a valve plate; the main body 101 is provided with a transfer passage for transferring plasma; the valve plate is movably mounted on the main body 101 and is positioned in the transmission channel; the valve plate is used for adjusting the open area of the transmission channel during the movement.
In the regulator 100 provided in this embodiment, the valve plate is disposed in the transmission channel of the main body 101, and the valve plate can adjust the open area of the transmission channel in the moving process, so as to adjust the number and density of plasmas passing through the transmission channel in unit time, thereby meeting the pursuit of the full window process on the etching rate and uniformity.
Meanwhile, after the regulator 100 provided in this embodiment is applied, the valve plate is moved to adjust the open area of the transmission channel, so that compared with the adapter block in the prior art, the new adapter block does not need to be replaced according to the process requirement, and the redundant preparation content (including stopping the reaction chamber 206, disassembling the heavy solid-state microwave source 201, maintaining the sealing structure at the adapter block, etc.) before replacing the adapter block is avoided, thereby saving time and labor.
In some embodiments, the valve plate of the regulator 100 is configured to be rotatably mounted to the body 101.
In the regulator 100, the plurality of valve plates includes a central valve plate 111 and at least one annular valve plate 114; each valve plate is sleeved one by one, and all the valve plates can rotate around the same axis independently.
The number of the annular valve plates 114 may be set to one, which is sleeved outside the central valve plate 111; the inner diameter of the annular valve plate 114 is not smaller than the outer diameter of the center valve plate 111, and the outer diameter of the annular valve plate 114 is not larger than the inner diameter of the transmission passage.
The number of the annular valve plates 114 may be plural, and the inner diameter of any annular valve plate 114 is not smaller than the outer diameter of the annular valve plate 114 or the central valve plate 111 sleeved therein; the outer diameter of any annular valve plate 114 is not greater than the inner diameter of the annular valve plate 114 sleeved outside or not greater than the inner diameter of the adjacent transmission channel.
In order to facilitate rotation, in the regulator 100, all the valve plates are driven to rotate by the same shaft group; the shaft group comprises a plurality of shafts which are sleeved in sequence, and each shaft can independently rotate around the axis of the shaft group; the number of the shafts in the shaft group is the same as that of the valve plates, and the shafts correspond to the valve plates one by one, and each valve plate is driven to rotate by the shaft corresponding to the valve plate. Each valve plate is fixedly connected with the corresponding shaft of the valve plate, and the fixed connection mode can adopt fixing pieces such as bolts or the like for connection or welding or the like, so that the embodiment is not limited. The axes of all the shafts in the shaft group coincide.
The shaft group comprises a central shaft 102 and a hollow shaft 105 which is sleeved outside the central shaft 102 one by one; central shaft 102 is fixedly connected with central valve plate 111; hollow shafts 105 respectively sleeved outside the central shaft 102 are fixedly connected with annular valve plates 114 respectively sleeved outside the central valve plates 111. In the case of two annular valve plates 114, the central shaft 102 is fixedly connected with the central valve plate 111, the first hollow shaft 103 sleeved outside the central shaft 102 is fixedly connected with the first annular valve plate 112 sleeved outside the central valve plate 111, and the second hollow shaft 104 sleeved outside the first hollow shaft 103 is fixedly connected with the second annular valve plate 113 sleeved outside the first annular valve plate 112.
The central shaft 102 of the shaft set may be configured as a solid shaft or a hollow shaft, which is not limited in this embodiment.
Each shaft in the shaft group is a stainless steel shaft respectively. The central shaft 102 and the hollow shaft 105 are shafts each circular in cross-sectional outer contour.
The shaft group is driven to rotate by a control device, and the control device comprises a motor which is used for driving the shaft to rotate; the number of the motors is the same as that of the shafts in the shaft group, and the motors are in one-to-one correspondence with the shafts in the shaft group; each motor is only used for driving the corresponding shaft to rotate around the axis of the shaft. In the case of three shafts, the first motor M1 is connected to the central shaft 102 and is used for independently driving the central shaft 102 to rotate around the axis of the central shaft 102; the second motor M2 is connected with the first hollow shaft 103 (the first hollow shaft 103 is fixedly connected with the first annular valve plate 112), and is used for independently driving the first hollow shaft 103 to rotate around the axis of the first hollow shaft 103; third motor M3 is coupled to second hollow shaft 104 (second hollow shaft 104 is fixedly coupled to second annular valve plate 113) and is configured to independently drive second hollow shaft 104 to rotate about the axis of second hollow shaft 104.
Each motor can independently operate so as to realize that different valve plates are independently controlled to rotate through each shaft.
The control device further comprises a control unit 107 and a sensor; the control unit 107 is configured to receive a communication instruction, and control each motor according to the communication instruction; the sensor is used for detecting the motion state of the motor and transmitting the detection result to the control unit 107; the number of the sensors is the same as that of the motors, and the sensors and the motors are in one-to-one correspondence. In the case of 3 motors, the number of sensors is three, wherein the first sensor S1 is used for detecting the motion state of the first motor M1, the second sensor S2 is used for detecting the motion state of the second motor M2, and the third sensor S3 is used for detecting the motion state of the third motor M3.
The control device further includes a housing 106; the motor, control unit 107 and sensors are all disposed within the housing 106; the housing 106 is provided with a communication port module 109, a signal port module 108, and a power port module 110.
The control unit 107 performs information interaction with an external host through the communication port module 109, and the control unit 107 can receive a communication instruction sent by the external host, calculate and convert the communication instruction into an electric signal, control the motor to operate and drive the corresponding valve plate to rotate; the control unit 107 also collects motor motion state information detected by each sensor, and transmits each motor motion state information to an external host through the communication port module 109. In operation, the sensor feeds back the detected motor motion state in the form of a signal to the control unit 107; the state of motion of the motor is not only detected by the sensor but also changed by receiving an instruction of the control unit 107.
The signal port module 108 is disposed at the rear end of the housing 106 in the control device (i.e. one end of the housing 106 close to a wall or other devices), and adopts a conventional communication line socket to implement interconnection between the control device and an external host, so as to interact with the state of the control device in real time.
The communication port module 109 is disposed at the rear end of the housing 106 in the control device and is located below the signal port module 108 and above the power port module 110, so as to implement information interaction between the control device and the external host, receive the instruction of executing the external host in real time, and provide the instruction execution status and specific related information to the external host.
The power port module 110 uses 24V dc power to power all the power consuming components within the control device.
In the regulator 100, the central valve plate 111 is circular, and the annular valve plate 114 is circular; the cross section of the transmission channel is circular.
In some embodiments, the gap size between any valve plate and adjacent valve plates in the axial direction (the axis refers to the same axis about which all valve plates rotate independently of each other) is no greater than a preset value; the gap size between the outermost annular valve plate 114 and the inner wall of the transmission passage in the axial direction (the axis refers to the same axis around which all the valve plates rotate independently) is not greater than a preset value; the preset value may be set to 0.5mm or the like, and the present embodiment is not limited thereto. Taking three valve plates as an example, the gap size between the central valve plate 111 and the adjacent first annular valve plate 112 along the axial direction is not more than 0.5mm; the gap dimension of the first annular valve plate 112 and the adjacent second annular valve plate 113 in the above-mentioned axial direction is not more than 0.5mm; the gap dimension between second annular valve plate 113 and the inner wall of the transfer passage in the above-described axial direction is not more than 0.5 mm.
The valve plate is arranged as a nonmetallic valve plate, such as a quartz valve plate, a sapphire valve plate or a ceramic valve plate; the thickness of any valve plate is not more than 2 mm, and the thickness is the dimension of the valve plate along the direction vertical to the plate surface. The body 101 of the regulator 100 is connected to the housing 106 of the control device by a connecting shaft, which may be made of teflon. The main body 101 of the regulator 100 is cylindrical and made of stainless steel; the inner wall of the main body 101 may be provided with a quartz cover or a sapphire cover for protection, and the corresponding transmission channel is surrounded by the quartz cover or the sapphire cover.
The operation of the regulator 100 according to the present embodiment is specifically described below with reference to fig. 2:
when the inner diameters of the transmission channels between the plasma source chamber 208 and the reaction chamber 206 are required to be different outside the process window, the external host computer issues a command to the control unit 107, and the control unit 107 processes the command and controls the corresponding motor to rotate by converting the digital signal into an electrical signal. For example:
(1) When it is necessary to realize that the transmission passage has an inner diameter of 25mm, the control unit 107 instructs the first motor M1 to rotate 90 deg. clockwise/counterclockwise, and at this time, the center valve plate 111 having an outer diameter dimension of 25mm rotates 90 deg. following the center shaft 102, realizing that the transmission passage is opened in a state in which the inner diameter is 25 mm.
(2) When the transmission channel needs to be realized to have an inner diameter of 40mm, the control unit 107 commands the first motor M1 and the second motor M2 to simultaneously rotate clockwise or simultaneously anticlockwise by 90 degrees, and at this time, the central valve plate 111 connected with the first motor M1 and the first annular valve plate 112 connected with the first hollow shaft 103 and having an outer diameter of 40mm synchronously rotate by 90 degrees, so that the transmission channel is opened to a state that the inner diameter is 40 mm.
(3) When the transmission channel needs to be realized with an inner diameter of 63mm, the control unit 107 commands the first motor M1, the second motor M2 and the third motor M3 to simultaneously rotate 90 ° clockwise or simultaneously anticlockwise, at this time, the first motor M1 is connected to the central valve plate 111, the first hollow shaft 103 is connected to the first annular valve plate 112 with an outer diameter of 40mm, and the second hollow shaft 104 is connected to the second annular valve plate 113 with an outer diameter of 63mm to synchronously rotate 90 °, so that the transmission channel is opened to a state with an inner diameter of 63 mm.
The open state of each valve plate is fed back to the control unit 107 by the sensors installed on the corresponding motors respectively, and then fed back to the external host by the control unit 107, so that information interaction is realized, and at the moment, the transmission channel of the main body 101 can rapidly and accurately realize the required inner diameter size.
The regulator 100 provided in this embodiment has a wide application range, and is compatible with all types of plasma generators currently available in the market by customization.
The embodiment of the invention also provides a semiconductor processing device, which comprises a plasma source cavity 208, the regulator 100 and a reaction cavity 206; the regulator 100 is the regulator 100 provided in the above embodiment; the plasma source chamber 208 and the reaction chamber 206 communicate through a transfer passage of the regulator 100.
The cross-sectional outer contour of the plasma source chamber 208 is the same shape and size as the outer contour of the outermost annular valve plate 114 in the regulator 100. The cross-sectional outer contour shape of the plasma source chamber 208 is the same as that of the transmission channel, and the two dimensions may be set to be the same, or the cross-sectional outer contour dimension of the transmission channel is slightly larger, which is not limited in this embodiment.
The plasma source cavity 208 is surrounded by a microwave catheter; a carrying table 207 is arranged in the reaction cavity 206 and is used for placing a workpiece to be etched; a solid state microwave source 201 of the semiconductor processing equipment transmits microwaves to the microwave conduit through a microwave transmission waveguide 202 and an isolator 203; in operation, photoresist stripping gas (comprising nitrogen and oxygen) is mixed after passing through the flow meter and enters the plasma source cavity 208, and is dissociated into active O2-free radicals under the action of microwaves, and the active O2-free radicals enter the reaction cavity 206 after passing through the transmission channel so as to generate process reaction on the workpiece to be etched.
One end of the main body 101 of the regulator 100 is provided with a flange, the flange is fixedly connected with the flange of the microwave catheter through a flange clamp 204, and a sealing ring which is high-temperature resistant and corrosion resistant is arranged between the two flanges. The other end of the main body 101 in the regulator 100 is also provided with a flange, the flange is fixedly connected with a fixed connection port 205 of the reaction chamber 206 through another flange clamp 204, and a sealing ring which is high-temperature resistant and corrosion resistant is arranged between the flange and the fixed connection port 205.
The semiconductor processing apparatus provided in this embodiment meets the pursuit of the etching rate and uniformity of the full window process by applying the regulator 100 provided in the above embodiment.
Of course, the semiconductor processing apparatus provided in this embodiment also has other effects related to the regulator 100 provided in the above embodiment, which are not described herein.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (13)

1. A regulator, comprising:
a main body provided with a transmission channel for transmitting plasma to the reaction chamber;
the valve plate can be movably arranged on the main body and is positioned in the transmission channel; the valve plate is used for adjusting the open area of the transmission channel in the moving process; the valve plate is rotatably mounted on the main body; the valve plates are multiple and comprise a central valve plate and at least one annular valve plate; each valve plate is sleeved one by one, and all the valve plates can rotate around the same axis independently.
2. The regulator of claim 1, wherein the annular valve plate is one and is sleeved outside the central valve plate; the inner diameter of the annular valve plate is not smaller than the outer diameter of the central valve plate, and the outer diameter of the annular valve plate is not larger than the inner diameter of the transmission channel.
3. The regulator of claim 1, wherein the plurality of annular valve plates, the inner diameter of any annular valve plate is not smaller than the outer diameter of the annular valve plate or the central valve plate sleeved therein; the outer diameter of any annular valve plate is not larger than the inner diameter of the annular valve plate sleeved outside the annular valve plate or not larger than the inner diameter of a transmission channel adjacent to the annular valve plate.
4. The regulator of claim 1, wherein all of the valve plates are driven in rotation by the same shaft set; the shaft group comprises a plurality of shafts which are sleeved in sequence, and each shaft can independently rotate around the axis of the shaft group; the number of the shafts in the shaft group is the same as that of the valve plates, and the shafts correspond to the valve plates one by one.
5. The regulator of claim 4, wherein the shaft assembly comprises a central shaft and a hollow shaft that is individually sleeved outside the central shaft; the central shaft is fixedly connected with the central valve plate; the hollow shafts sleeved outside the central shaft one by one are fixedly connected with the annular valve plates sleeved outside the central valve plate one by one.
6. Regulator according to claim 4 or 5, characterized in that the valve plate and the corresponding shaft are fixedly connected by means of a fixing or by welding.
7. The adjuster according to claim 4, wherein the shaft set is driven in rotation by a control device comprising:
a motor for driving the shaft to rotate; the number of the motors is the same as that of the shafts in the shaft group, and the motors and the shafts are in one-to-one correspondence.
8. The regulator of claim 7, wherein the control device further comprises:
the control unit is used for receiving the communication instruction and controlling each motor according to the communication instruction;
the sensor is used for detecting the motion state of the motor and transmitting a detection result to the control unit; the number of the sensors is the same as that of the motors, and the sensors and the motors are in one-to-one correspondence.
9. The regulator of claim 8, wherein the control device further comprises a housing; the motor, the control unit and the sensor are all arranged in the shell; the shell is provided with a communication port module, a signal port module and a power port module.
10. The regulator of claim 1, wherein the central valve plate is circular and the annular valve plate is annular; the section of the transmission channel is circular.
11. The regulator according to claim 1 or 10, wherein a gap size between any of the valve plates and an adjacent valve plate in the axial direction is not more than a preset value; the gap size between the outermost annular valve plate and the inner wall of the transmission channel along the axial direction is not larger than the preset value.
12. A semiconductor processing device is characterized by comprising a plasma source cavity, a regulator and a reaction cavity; the regulator is a regulator according to any one of claims 1 to 11; the plasma source cavity is communicated with the reaction cavity through a transmission channel of the regulator.
13. The semiconductor processing apparatus of claim 12, wherein the plasma source chamber has a cross-sectional profile that is the same shape and size as the profile of the outermost annular valve plate in the regulator.
CN202311298650.4A 2023-10-09 2023-10-09 Regulator and semiconductor processing equipment Active CN117038533B (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201858368U (en) * 2010-11-20 2011-06-08 张星原 Concentric butterfly valve with double valve plates
CN103807454A (en) * 2012-11-14 2014-05-21 北京北方微电子基地设备工艺研究中心有限责任公司 Valve plate connection assembly, door valve device and plasma processing equipment
CN114068272A (en) * 2020-07-31 2022-02-18 中微半导体设备(上海)股份有限公司 Gas flow regulating device and regulating method and plasma processing device
CN114151553A (en) * 2021-11-29 2022-03-08 西安热工研究院有限公司 Coaxial valve type structure of bivalve plate
CN114420524A (en) * 2020-10-28 2022-04-29 中微半导体设备(上海)股份有限公司 Gas flow regulating device and method and plasma processing device using same
CN114542740A (en) * 2020-11-24 2022-05-27 上海华力集成电路制造有限公司 Vacuum extraction valve and vacuum control system of semiconductor equipment

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201858368U (en) * 2010-11-20 2011-06-08 张星原 Concentric butterfly valve with double valve plates
CN103807454A (en) * 2012-11-14 2014-05-21 北京北方微电子基地设备工艺研究中心有限责任公司 Valve plate connection assembly, door valve device and plasma processing equipment
CN114068272A (en) * 2020-07-31 2022-02-18 中微半导体设备(上海)股份有限公司 Gas flow regulating device and regulating method and plasma processing device
CN114420524A (en) * 2020-10-28 2022-04-29 中微半导体设备(上海)股份有限公司 Gas flow regulating device and method and plasma processing device using same
CN114542740A (en) * 2020-11-24 2022-05-27 上海华力集成电路制造有限公司 Vacuum extraction valve and vacuum control system of semiconductor equipment
CN114151553A (en) * 2021-11-29 2022-03-08 西安热工研究院有限公司 Coaxial valve type structure of bivalve plate

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