CN201121209Y - Plasma chemistry vapor deposition apparatus - Google Patents
Plasma chemistry vapor deposition apparatus Download PDFInfo
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- CN201121209Y CN201121209Y CNU2007200326425U CN200720032642U CN201121209Y CN 201121209 Y CN201121209 Y CN 201121209Y CN U2007200326425 U CNU2007200326425 U CN U2007200326425U CN 200720032642 U CN200720032642 U CN 200720032642U CN 201121209 Y CN201121209 Y CN 201121209Y
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Abstract
The utility model discloses a plasma chemical vapor deposition, which comprises a microwave generator, a transmission component 101, a microwave resonant cavity 102, a process chamber, a sample stage component 103, a vacuum component 104, an air passage component 105, an automatic transmitting component 106 and a control component 107, wherein, a magnetic device 306 arranged with equal interval is arranged inside of the microwave resonant cavity, the sample stage component is arranged inside the process chamber, the microwave resonant cavity, the vacuum component, and the automatic transmitting component are respectively connected with the process chamber 809, the microwave generator and the transmission component are connected with the microwave resonant cavity, the control component respectively controls the working conditions of the microwave generator, the transmission component, the process chamber, the sample stage component, the vacuum component, and the air passage component through interfaces, and accomplishes the deposition process of the membrane. The plasma chemical vapor deposition has the advantages that area is large, the uniformity is good, the deposition rate is high, the automaticity and the production efficiency are high, the reliability is good, the power consumption is low, the stability and repeatability are good, and the utility model can be used for producing microelectronic membrane.
Description
Technical field
The utility model belongs to the microelectronic technique equipment technical field, relates to the thin-film deposition device, a kind of specifically plasma chemical vapor deposition device.
Background technology
The plasma chemical vapor deposition technology is one of important technology basis of deep-submicron Micrometer-Nanometer Processing Technology.Electron cyclotron resonace ECR is meant that the microwave frequency ω when input equals electron gyro-frequency ω
CeShi Fasheng resonance, microwave energy is coupled to electronics, and the electron ionization neutral gas molecule that obtains energy produces the process of discharge.By regulating magnetic field, make to reach resonant condition that this zone is called the ECR district in a certain zone of discharge chamber.When microwave frequency is 2.45GHz, reach the magnetic induction density B=0.0875T of electron cyclotron resonace.Microwave electron cyclotron resonance chemical vapor deposition ECRCVD technology and corresponding apparatus technology are a kind of novel thin film deposition technology that just progressively grows up in the later stage in the 1980's.It is to utilize the cyclotron resonance effect of electronics under microwave and the action of a magnetic field, produces the confined plasma of high-density, high ionization degree, thereby carries out the vapor deposition of energy assistant chemical.Aspect semiconducter device, microelectronics and photoelectron technology and related discipline technical field many, all have great application prospect.
The microwave electron cyclotron resonance plasma chemistry gas phase sedimentation technology is a kind of new processing film method that just grows up of the later stage eighties in the world, has only minority developed countries such as the U.S., Japan to grasp at present.The ECRCVD equipment that external well-known ECR device fabrication manufacturer provides is example with the products C irrus300 of NEXX Systems, and plasma density can reach 5 * 10
11Cm
-3About 10～the 20eV of ion energy; Microwave source frequency is 2.45GHz, and power 0 to 1.2kW is adjustable; The processing unit parts adopt the microcomputer control mode, and the process components level of automation is higher; Deposition rate can reach and be about 100nm/min; But the weak point of this equipment is to adopt solenoid magnetic field, and energy consumption is higher, the cost costliness, and wafer process area and homogeneity can not satisfy the requirement of current microelectronics.Coaxial coil type ECR field form is adopted in domestic microwave ECR plasma source mostly, and its shortcoming is the device structure complexity, and is bulky; The wafer process area is less, but the processed wafer diameter is confined to 2～4 inches; Deposition rate is lower, is generally less than 60nm/min; Level of automation is low, mostly is manual control mode greatly, does not possess the ability of scale production in batches, does not occur being applied to the commercial prod of scale production as yet.
The content of utility model
The purpose of this utility model is to overcome the deficiency of above-mentioned prior art, but the microwave electron cyclotron resonance plasma chemistry gas phase sedimentation device that provides a kind of deposition rate height, even, the simple in structure steady running of big area and parameter to be easy to control.
The utility model purpose is achieved in that
The utility model utilizes microwave to produce surface-duided wave by taper coaxial openings dielectric medium cavity, adopt novel high energy product Nd-Fe-B thulium permanent magnet and rational deployment to form high high-intensity magnetic field, by electron cyclotron resonace effect in the resonant field zone, produce big area, even, high density plasma, control the film deposition art flow process by the microcomputer control mode.Whole device comprises: microwave power source and transmission part, microwave resonance cavity, chamber and sample table parts, vacuum component, gas path component is characterized in that: microwave power source and transmission part are provided with rectangle-coaxial waveguide transmodulator and microwave resonator coaxial waveguide; Microwave resonance cavity is made up of for three sections last circular waveguide-tapered transmission line-following circular waveguide, and the bottom is provided with medium window; Chamber and sample table parts are provided with and hold chip part and heater block; This chamber and sample table parts are connected with automatic biography chip part; Described microwave resonance cavity, vacuum component, pass chip part, gas path component automatically and link to each other with the sample table parts with chamber respectively, described each parts all connect control by function unit.
Described medium window is provided with magnetic field components, and this magnetic field components adopts permanent magnetic iron to form annular structure and being fixed on the no magnetic template alternately.
Described automatic biography chip part comprises prechamber, passes the sheet mechanical manipulator, holds chip part, puts the sheet film magazine, gets the sheet film magazine, puts sheet film magazine hoisting appliance, gets sheet film magazine hoisting appliance, this biography sheet mechanical manipulator respectively with get the sheet film magazine and put the sheet film magazine and be connected, and be connected with chamber in the sample table parts by rectangle valve and chamber, this is put the sheet film magazine and gets the sheet film magazine and be placed in the prechamber.
The described chip part that holds comprises rotating screw bolt, transmission screw, plummer; These rotating screw bolt two ends link to each other with transmission screw with rotary electric machine respectively, and the transmission screw top is fixed on the plummer center.
The following circular waveguide of described microwave resonance cavity is fixed with ring flange, no magnetic pallet successively; Described magnetic field components is placed on this no magnetic pallet.
Be provided with window in the middle of the described ring flange, described medium window covers on this window, and this ring flange is connected with chamber.
Described employing permanent magnetic iron forms annular structure alternately, is three circle permanent magnetic irons uniformly-spaced are fixed on the no magnetic template, promptly by different radii and angle from inside to outside
R
1∶R
2∶R
3＝1∶2∶3，θ
1∶θ
2∶θ
3＝4∶2∶1。
Described function unit comprises upper computer, analog quantity microcontroller, digital quantity microcontroller, intelligence instrument control unit, simulating signal function unit, Digital Signals parts, intelligence instrument, this upper computer is connected with analog quantity microcontroller, digital quantity microcontroller, intelligence instrument control unit respectively by network, this digital quantity microcontroller links to each other with the Digital Signals parts, this analog quantity microcontroller links to each other with the simulating signal function unit, and this intelligence instrument control unit links to each other with intelligence instrument.
Advantage of the present utility model is as follows:
(1) since adopt annular alternately three groups of magnet steel and be in the magnet steel of home position, can obtain comparatively uniform in-plane distributed permanent magnetic field easily, not only reduced equipment volume, and reduced power consumption.
(2) owing to adopt the microwave resonance cavity of going up circular waveguide-tapered transmission line-three sections integrative-structures of following circular waveguide, be beneficial to and form the large area microwave electromagnetic field, make the plasma process area big, good uniformity; Owing to adopt the reactance coil parts, prevented microwave leakage simultaneously; In addition owing to adopt the unitized construction of ring flange, reactance coil, pallet, so this microwave resonator can be for convenience detach, for ease of maintenaince.
(3) owing to adopted automatic biography chip part, level of automation and production efficiency have been improved.
(4) because function unit adopts the microcomputer control mode, not only strengthened level of automation and production efficiency, improved technology stability and good reproducibility, and helped the processing of abnormal conditions.
(5) deposition rate height, stable, good reliability.
Test result shows: the utility model ECR magnetic field reaches 875Gs apart from the surperficial 3cm of magnet steel place magneticstrength; The ECR district reaches 300 millimeters of Φ, plasma density 〉=1 * 10
10Cm
-3, the about 15ev of electron energy; The maximum batch processing amount of 200 inches wafers of Φ is 25, production efficiency 〉=20 slice/hour; Temperature is ℃ controlled from room temperature～300, and control accuracy ± 1 ℃ keeps precision ± 1 ℃; Microwave source frequency is 2.45GHZ, and power is that 0～3KW is adjustable continuously; Apart from the microwave leakage energy≤1mW/cm of device 5cm place
2The reaction chamber base vacuum is better than 5.0 * 10
-5Pa, dynamic vacuum 1.33 * 10 behind the feeding process gas
1～5 * 10
-2Pa, gas path component leak rate≤1.0 * 10
-9TorrL/Sec; The at room temperature uniform high-quality SiNx of high speed deposition big area, SiO
2, SiO
xN
yDeng dielectric film, homogeneity is better than 95% on Φ 200 substrates in typical case, and repeatability is better than 95%, and deposition rate is higher than 100nm/min.
Description of drawings
Fig. 1 is the utility model microwave ECR CVD equipments overall structure synoptic diagram;
Fig. 2 is microwave source of the present utility model and transmission part structural representation;
Fig. 3 is the structural representation of microwave resonance cavity of the present utility model;
The magnetic field components structural representation that Fig. 4 the utility model adopts, wherein Fig. 4 a is a magnetic field components cross-sectional structure synoptic diagram, Fig. 4 b is no magnetic formwork structure synoptic diagram;
Fig. 5 is that the utility model vacuum component is formed synoptic diagram;
Fig. 6 is that the utility model gas path component is formed synoptic diagram;
Fig. 7 is that automatic biography chip part of the present utility model is formed synoptic diagram, and wherein Fig. 7 a passes chip part one-piece construction synoptic diagram automatically, and Fig. 7 b is the robot manipulator structure synoptic diagram;
Fig. 8 is the structural representation of the utility model chamber and sample table parts;
Fig. 9 is the structural representation of the utility model function unit.
Embodiment
Below in conjunction with accompanying drawing the utility model is done and to be described in further detail.
Referring to Fig. 1, microwave electron cyclotron resonance plasma chemistry gas phase sedimentation device of the present utility model comprises, microwave power source and transmission part 101, microwave resonance cavity 102, chamber and sample table parts 103, vacuum component 104, gas path component 105, passes chip part 106, function unit 107 automatically.The wherein structure of each parts such as Fig. 2～shown in Figure 9.
With reference to Fig. 2, this microwave power source and transmission part 101 are made up of microwave generator 201, hydrokineter 202, water load 203, resistance dynamometer 204, directional coupler 205, pin tuner 206, short-circuit plunger 207, rectangular waveguide 208, rectangle-coaxial waveguide transmodulator 209 and microwave resonator coaxial waveguide 210.The annexation of each several part is: rectangular waveguide 208 is connected 209 from left to right successively respectively with microwave generator 201, hydrokineter 202, directional coupler 205, pin matching box 206, rectangle-coaxial waveguide transmodulator, short-circuit plunger 207 connects; The reflection end of hydrokineter 202 connects water load 203; Resistance dynamometer 204 is connected with directional coupler 205; Rectangle-coaxial waveguide transmodulator 209 is connected with microwave resonator coaxial waveguide 210.Microwave generator 201 adopts WY50002-1C type continuous wave magnetron microwave source, the microwave that this power source produces is through hydrokineter 202, water load 203, resistance dynamometer 204, directional coupler 205, pin tuner 206 and short-circuit plunger 207 regulating load coupling and reflective powers are transported in the microwave resonator coaxial waveguide 210 by BJ-26 rectangular waveguide 208 and rectangle-coaxial waveguide transmodulator 209.These parts are that microwave resonator excites generation electric field conveying capacity.
With reference to Fig. 3, this microwave resonance cavity 102 is made of coaxial waveguide 210, medium window 303.Coaxial waveguide 210 adopts the integrative-structure of going up circular waveguide 301 and tapered transmission line 302 compositions, these coaxial waveguide 210 belows are fixed with ring flange 312, be fixed with medium window 303 on the ring flange 312, medium window 303 is provided with no magnetic pallet 307, no magnetic pallet 307 is provided with magnetic field components 306, is connected by reactance coil 305 between this no magnetic pallet 307 and the coaxial waveguide inner wire 309.Its working process is: the microwave of microwave power source output 2.45GHz, on the fixed ring 308 and medium window 303 near the transmission loop is incorporated into the resonator cavity opening surface, the outer rim that transports by medium window 303 of microwave moves to the center, thereby at the medium window 303 surface excitation surface-duided waves of chamber one side and form uniform electric field distribution.The integrative-structure that this coaxial waveguide 210 is made up of circular waveguide tube and tapered wave-guide, comprise circular waveguide 301, tapered transmission line 302 and 313 3 sections waveguides of following circular waveguide, promptly the last circular waveguide 301 that constitutes of the outer conductor that is 49mm by external diameter inner wire that is 21mm and internal diameter is extended to tapered transmission line 302 with 45 degree angles, with one be the following circular waveguide 313 that the inner wire of 304mm and outer conductor that internal diameter is 344mm constitute by external diameter so that generate the heavy caliber microwave electric field.Waveguide adopts stainless material, and inwall is coated with brass.Have circular window in the middle of this ring flange 312, this window upper outer has sealing groove 304.Be provided with sealing-ring in the sealing groove 304, sealing groove and sealing-ring have guaranteed the vacuum tightness of ECR reaction chamber.The last outer rim of ring flange 312 is connected by screw thread 310 with the following outer rim of tapered transmission line 302, and the following outer rim of ring flange 312 is connected by screw thread 311 with the last outer rim of chamber, so that the dismounting maintenance.Ring flange 312 adopts stainless material, and inwall is coated with brass.This medium window 303 is for adopting the plectane of pottery or quartz material, and its radius is greater than ring flange circular window radius and sealing groove 304 groove width sums.This medium window 303 is placed on sealing groove 304 tops, and is fixing by rubber ring 308 between medium window 303 and ring flange 312 inwalls.This no magnetic pallet 307 is placed on medium window 312 tops, and is fixing with coaxial waveguide inner wire 309 by reactance coil 305, places magnetic field components 306 on this no magnetic pallet 307.This reactance coil 305 is welded on the pallet 307, to prevent microwave leakage.This magnetic field components 306 comprises no magnetic template 401, permanent magnetic iron 402, shielding slab 403, magnet 402 is fixed on the no magnetic template 401, form big area high strength permanent magnetic field alternately by annular, no magnetic template 401 belows are provided with shielding slab 403, this shielding slab 403 is fixed as one with no magnetic template 401 by the suction of magnet, shown in Fig. 4 a.The shape of magnet 402 comprises trapezoidal magnet and circular magnet, all adopts the Nd-Fe-B permanent magnet material, and Surface field intensity is 5 teslas.No magnetic template 401 is a disc-shape, and circle centre position is provided with circular fixed orifices 404, circumference be spacedly distributed three the circle trapezoidal fixed orifices 405, shown in Fig. 4 b.This three circles fixed orifices on disk by the center of circle outwards respectively with angle 60 degree, 30 degree and 15 degree are spacedly distributed, three enclose fixed orificess on disk by the center of circle outwards respectively with 36 millimeters of radiuses, 72 millimeters and 108 millimeters arrangements.With installing on the no magnetic pallet 307 at medium window 303 tops that permanent magnetic part 306 after the combination tips upside down on the ecr plasma source, meet the permanent magnetic field that the ECR discharge requires inner formation of ECR chamber.
With reference to Fig. 5, this vacuum component 104 is made up of first molecular pump 501 and second molecular pump, 502, the first elementary vacuum unit 503 and the second elementary vacuum unit 504, first stop valve 505 and second stop valve 506, throttling valve 507, strainer 508, the family of power and influence 509, purging valve 510, combined type vacuumometer 511, pipeline, first segregaion valve 513 and second segregaion valve 514.Wherein, elementary vacuum unit 503 links to each other with first stop valve 505 by pipeline, first stop valve 505 links to each other with first molecular pump 501 by pipeline, first molecular pump 501 links to each other with first segregaion valve 513 by pipeline, first segregaion valve 513 links to each other with throttling valve 507 by pipeline, throttling valve 507 links to each other with strainer 508 by pipeline, strainer 508 links to each other with chamber 809 by pipeline, chamber 809 links to each other with rectangle valve 509 by pipeline, rectangle valve 509 links to each other with prechamber 701 by pipeline, prechamber 701 links to each other with second segregaion valve 514 by pipeline, second segregaion valve 514 links to each other with second molecular pump 502 by pipeline, second molecular pump 502 links to each other with the second elementary vacuum unit 504 by pipeline by pipeline and second stop valve, 506, the second stop valves 506; Vacuumometer 511 links to each other with chamber 809, prechamber 701, first stop valve 505, second stop valve 506 by pipeline respectively; Purging valve 510 links to each other with first stop valve 505 by pipeline.The F160/500 type turbomolecular pump that this first molecular pump 501 and second molecular pump 502 select for use scientific instrument development center, Beijing to produce, the first elementary vacuum unit 503 and the second elementary vacuum unit 504 are selected the JZJ-30 mechanical supercharging pumping set of Beijing instrument plant for use.Vacuumometer 511 adopts the ZDF-X type compound vacuum gauge of Chengdu instrucment and meter plant, has two-way resistance, one tunnel ionization duplex measurement ability, and useful range is 10
5～10
-6Pa can satisfy vacuum component from atmosphere～10
-5The Pa Testing requirement, and can carry out peripheral unit control.Vacuum component 104 base vacuum degree are 1 * 10
-4Pa, the technology dynamic vacuum is being 1 * 10
-2～10Pa, and can carry out regulating and controlling.This vacuum component 104 provides vacuum working environment for the microwave electron cyclotron resonance plasma chemistry gas phase sedimentation device.
With reference to Fig. 6, this gas path component 105 is established six tunnel gas circuits altogether, is shown with function unit by reducing valve, strainer, stopping valve, under meter, mixed gas tank, air ring, stainless steel pipeline and gas circuit and forms.The each several part annexation of each gas circuit is: gas cylinder is connected with reducing valve by pipeline, reducing valve is connected with strainer by pipeline, strainer is connected with first stop valve by pipeline, and first stop valve is connected with under meter by pipeline, and under meter is connected with second stop valve by pipeline.Gas circuit display control section 609 comprises the indicative control unit of mass flowmeter and magnetic valve, the opening with closed of pilot-gas pipeline.Wherein mass flow controller adopts Beijing 700 D07-7AZM of factory type products, and strainer is selected TF series for use, and magnetic valve adopts the GDC-5 of Shanghai No.2 Valve Factory type product.Gas piping adopts the external diameter Φ 6mm316L twin polishing stainless steel tube of import, and the VCR joint is all adopted in the gas pipeline connection.Each gas circuit all is connected with mixed gas tank 607 by pipeline, mixes gas tank 607 and is connected by pipeline and chamber 809 interior air rings 608.This gas path component 105 provides quantitative process gas source for depositing technics.
With reference to Fig. 7, should automatically pass chip part 106 and comprise that the sample table that passes sheet mechanical manipulator 702, rectangle valve 509, is positioned at chamber 809 held chip part 801, and be positioned at putting sheet film magazine 703, get sheet film magazine 704, put sheet film magazine hoisting appliance 705, getting sheet film magazine hoisting appliance 706 of prechamber 701.Pass sheet mechanical manipulator 702 and get sheet film magazine 704 and put sheet film magazine 703 and be connected, and pass through rectangle valve 509 and be connected with chamber 809.Film magazine 703 and 704 is placed in the prechamber 701, gets sheet film magazine 704 load substrates mating plates, puts sheet film magazine 703 and loads thin film wafers.
With reference to Fig. 8, this chamber and sample table parts 103 comprise that chamber 809, sample table 802, sample table hold chip part 801, turning unit 810 and heater block 814.Chamber 809 front sides are provided with viewing window and door, and chamber 809 inside are provided with air ring 608 and sample table 802.This air ring 608 is the annulus of 200mm for diameter, be placed in the chamber 1cm place under the medium window 303, this annulus inner side-wall is provided with evenly-distributed air holes, hole diameter is 0.5mm, angle intervals is 5 °, during air inlet, enter in the chamber the pore of working gas from inner side-wall, form the uniform airflow field distribution.This sample table 802 comprises hollow disk top board 807 and the base 808 of diameter 250mm, thickness 10mm, and disk sidewall and base 808 is fixing, and top board 807 is fixed on the magnetic rotating screw bolt 811, is positioned at 7cm place under the medium window 303.Base 808 is fixed in the chamber.This turning unit 810 is made of magnetic rotating screw bolt 811 and magnetic transmission screw 812, connects for magnetic between magnetic rotating screw bolt 811 and the magnetic transmission screw 812.Rotary electric machine 813 drives 812 rotations of magnetic transmission screw during work, and makes the magneticaction between magnetic rotating screw bolt 811 and the magnetic transmission screw 812 rotate.This sample table is held chip part 801 and is comprised rotating screw bolt 804, transmission screw 805, plummer 803; Rotating screw bolt 804 two ends link to each other with transmission screw 805 with rotary electric machine 806 respectively; Transmission screw 805 tops are fixed on plummer 803 centers.This heater block 814 is made of resistance wire, enclosed housing, heating control section part, adopts sealing resistive heating mode that print is heated, and adopts thermopair to carry out temperature survey, carries out the setting and the control of temperature with computer.Resistance wire is located in the enclosed housing, and enclosed housing is connected by lead with the heating control section part.The lead of chamber and sample table parts 103 inside all adopts coaxial configuration to carry out electric shielding, and with quartz plate, quartz tube and grounded bracket as plasma shield so that plasma body be confined to around the print.Chamber, sample table structured material are selected magnetism-free stainless steel and resistant to elevated temperatures insulating material for use, to guarantee the vacuum of cleaning, prevent to pollute.Chamber and sample table parts 103 upwards join by screw 311 and microwave resonance cavity 102; Link to each other with strainer 508 through lower flange downwards, upside is connected with mixed gas tank 607 by air ring 608 entrance pipes, and the side links to each other with automatic biography chip part 106 through rectangle valve 509.This chamber and sample table parts provide chemical deposition required temperature and the mechanical support of cavity, technology that reaction is carried out, and the rotation of all-rush and load action.
With reference to Fig. 9, this function unit 107 comprises upper computer 901, analog quantity microcontroller 902, digital quantity microcontroller 903, intelligence instrument control unit 904, simulating signal function unit 905, Digital Signals parts 906, intelligence instrument 907.On the hardware using/lower computer network structure control mode.Upper computer 901 is selected for use and is ground magnificent IPC-6811 industrial control computer, and the function unit software platform adopts Windows98, and control software adopts the visualized graphs interface software of VB exploitation, is solidificated in the industrial control computer.Lower computer adopts popular ND series I/O template and A/D template.Upper computer 901 is connected with analog quantity microcontroller 902, digital quantity microcontroller 903, intelligence instrument control unit 904 by 485 networks, digital quantity microcontroller 903 links to each other with Digital Signals parts 906, analog quantity microcontroller 902 links to each other with simulating signal function unit 905, and intelligence instrument control unit 904 links to each other with intelligence instrument 907.Microcomputer control parts 107 are finished installing the automatic control of each parts and sub-unit.Under the microcomputer mode of operation, operator finish technological operation by the micro computer monitoring interface, and this moment, microcomputer was in the monitoring state, recording process data in the time of the complete operation task.
Above-mentioned microwave resonance cavity 102, vacuum component 104, gas path component 105, automatically pass chip part 106, link to each other with chamber 103 respectively, microwave power source and transmission part 101 link to each other with microwave resonance cavity 102, function unit 107 links to each other with sample table parts 103, vacuum component 104, gas path component 105 with microwave power source and transmission part 101, chamber respectively, to control the working order of each parts.
Claims (8)
1. plasma chemical vapor deposition device, comprise microwave power source and transmission part (101), microwave resonance cavity (102), chamber and sample table parts (103), vacuum component (104), gas path component (105), it is characterized in that: microwave power source and transmission part (101) are provided with rectangle-coaxial waveguide transmodulator (209) and microwave resonator coaxial waveguide (210); Microwave resonance cavity (102) is made up of for (313) three sections last circular waveguide (301)-tapered transmission line (302)-following circular waveguide, and the bottom is provided with medium window (303); Chamber and sample table parts (103) are provided with and hold chip part (801) and heater block (814); This chamber and sample table parts (103) are connected with automatic biography chip part (106); Described microwave resonance cavity (102), vacuum component (104), pass chip part (106), gas path component (105) automatically and link to each other with sample table parts (103) with chamber respectively, described each parts all connect control by function unit (107).
2. plasma chemical vapor deposition device according to claim 1, it is characterized in that, medium window (303) is provided with magnetic field components (306), and this magnetic field components adopts permanent magnetic iron (402) to form annular structure and being fixed on the no magnetic template (401) alternately.
3. plasma chemical vapor deposition device according to claim 1, it is characterized in that, automatically pass chip part (106) and comprise prechamber (701), pass sheet mechanical manipulator (702), hold chip part (801), put sheet film magazine (703), get sheet film magazine (704), put sheet film magazine hoisting appliance (705), get sheet film magazine hoisting appliance (706), this biography sheet mechanical manipulator respectively with get the sheet film magazine and put the sheet film magazine and be connected, and be connected with chamber (809) in the sample table parts by rectangle valve (509) and chamber, this is put the sheet film magazine and gets the sheet film magazine and be placed in the prechamber (701).
4. plasma chemical vapor deposition device according to claim 1 is characterized in that, the described chip part (801) that holds comprises rotating screw bolt (804), transmission screw (805), plummer (803); These rotating screw bolt two ends link to each other with transmission screw with rotary electric machine (810) respectively, and the transmission screw top is fixed on the plummer center.
5. plasma chemical vapor deposition device according to claim 1 and 2 is characterized in that, the following circular waveguide (313) of microwave resonance cavity (102) is fixed with ring flange (312), no magnetic pallet (307) successively; Described magnetic field components (306) is placed on this no magnetic pallet.
6. plasma chemical vapor deposition device according to claim 1 or 5 is characterized in that, is provided with window in the middle of the ring flange (312), and described medium window (303) covers on this window, and this ring flange is connected with chamber (809).
7. plasma chemical vapor deposition device according to claim 2, it is characterized in that, described employing permanent magnetic iron (402) forms annular structure alternately, is three circle permanent magnetic irons uniformly-spaced are fixed on the no magnetic template (401), promptly by different radii and angle from inside to outside
R
1∶R
2∶R
3＝1∶2∶3，θ
1∶θ
2∶θ
3＝4∶2∶1。
8. plasma chemical vapor deposition device according to claim 1, it is characterized in that, described function unit (107) comprises upper computer (901), analog quantity microcontroller (902), digital quantity microcontroller (903), intelligence instrument control unit (904), simulating signal function unit (905), Digital Signals parts (906), intelligence instrument (907), this upper computer by network respectively with the analog quantity microcontroller, the digital quantity microcontroller, the intelligence instrument control unit connects, this digital quantity microcontroller links to each other with the Digital Signals parts, this analog quantity microcontroller links to each other with the simulating signal function unit, and this intelligence instrument control unit links to each other with intelligence instrument.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007200326425U CN201121209Y (en) | 2007-08-31 | 2007-08-31 | Plasma chemistry vapor deposition apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007200326425U CN201121209Y (en) | 2007-08-31 | 2007-08-31 | Plasma chemistry vapor deposition apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201121209Y true CN201121209Y (en) | 2008-09-24 |
Family
ID=40008435
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2007200326425U Expired - Lifetime CN201121209Y (en) | 2007-08-31 | 2007-08-31 | Plasma chemistry vapor deposition apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201121209Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104726850A (en) * | 2013-12-23 | 2015-06-24 | 朱雨 | Microwave-plasma chemical vapor deposition equipment |
-
2007
- 2007-08-31 CN CNU2007200326425U patent/CN201121209Y/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104726850A (en) * | 2013-12-23 | 2015-06-24 | 朱雨 | Microwave-plasma chemical vapor deposition equipment |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20080924 |
|
| CX01 | Expiry of patent term |