CN117030307A - Heat dissipation evaluation method and system based on intelligent power module wafer junction temperature - Google Patents
Heat dissipation evaluation method and system based on intelligent power module wafer junction temperature Download PDFInfo
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Abstract
The invention relates to the technical field of heat dissipation evaluation of intelligent power modules, in particular to a heat dissipation evaluation method and system based on the wafer junction temperature of an intelligent power module. The thermal resistance model for the method comprises an IPM module and a radiator, wherein the IPM module is attached to the radiator, the radiator is correspondingly provided with a radiating fan, and the wind speed of the radiating fan is V S The method comprises the steps of carrying out a first treatment on the surface of the The substrate, the temperature sensor and the wafers of the IPM module are packaged into a whole, and the junction temperature T of the wafers j =T c +P total ×R th(j‑c) The method comprises the steps of carrying out a first treatment on the surface of the Installing a thermal resistance model on the mechanical model, fitting to obtain T j 、V S And T ntc To obtain the ambient temperature T a Under conditions limited by T jmax Mechanical model output power of (2), mechanical model output power of (V) S And T ntc Is a relationship of (2); and obtaining the protection strategy of the intelligent power module according to the relation curve. The evaluation method is beneficial to obtaining a flexible protection strategy for the intelligent power module.
Description
Technical Field
The invention relates to the technical field of heat dissipation evaluation of intelligent power modules, in particular to a heat dissipation evaluation method and system based on the wafer junction temperature of an intelligent power module.
Background
The smart power module, IPM (Intelligent Power Module), is a power driven product that combines power electronics and integrated circuit technology. The intelligent power module integrates the power switch device and the high-voltage driving circuit and is internally provided with fault detection circuits such as overvoltage, overcurrent, overheat and the like. The intelligent power module receives the control signal of the MCU on one hand, drives the subsequent circuit to work, and sends the state detection signal of the system back to the MCU on the other hand. The intelligent power module gains larger and larger markets by virtue of high integration level, high reliability and the like, is particularly suitable for a frequency converter of a driving motor and various inverter power supplies, and is an ideal power electronic device for frequency conversion speed regulation, metallurgical machinery, electric traction, servo driving and frequency conversion household appliances.
IPM module is the most important power device of motor driving frequency converter, and module R is caused along with miniaturization of IPM module th(j-c) (thermal resistance from wafer to module case surface) becomes large, thereby presenting more and more challenges for temperature rise; although advances in chip technology can reduce device loss and alleviate the temperature rise problem of the miniaturized IPM module to some extent, the increasingly mature control technology and cost control also need to more effectively utilize the wafer junction temperature evaluation result for flexible protection.
However, at present, an NTC temperature sensor is integrated in the IPM module, and the NTC temperature sensor can only detect the temperature inside the IPM module, but cannot obtain the junction temperature of the wafer, but cannot obtain the real junction temperature of the wafer, so that it is difficult to evaluate and adjust the heat dissipation effect of the IPM module based on the junction temperature of the wafer.
Disclosure of Invention
The invention aims to provide a heat dissipation evaluation method based on an intelligent power module wafer junction temperature, which can obtain a real wafer junction temperature and obtain the wafer junction temperature T through a model test j And V is equal to S And T ntc And obtaining the ambient temperature T a Under conditions limited by T jmax Mechanical model output power, V S And T ntc The evaluation and adjustment of the heat dissipation effect of the IPM module are realized, and the flexible protection strategy of the intelligent power module is obtained;
the invention aims to provide a heat dissipation evaluation system based on the wafer junction temperature of an intelligent power module, wherein the heat dissipation evaluation method is applied to the heat dissipation evaluation system, and the wafer junction temperature is evaluated by a model test, so that a flexible protection strategy for the intelligent power module is obtained.
To achieve the purpose, the invention adopts the following technical scheme:
a heat radiation evaluation method based on the junction temperature of an intelligent power module wafer comprises an IPM module and a radiator, wherein the IPM module is attached to the radiator, the radiator is correspondingly provided with a heat radiation fan, and the wind speed of the heat radiation fan is V S ；
The IPM module comprises a substrate, a temperature sensor and a plurality of wafers, wherein the substrate, the temperature sensor and the wafers are packaged into a whole, and the temperature sensor is used for detecting the temperature T in the package ntc ；
Junction temperature T of wafer j =T c +P total ×R th(j-c) Wherein T is j : junction temperature of wafer, T c : surface temperature of package between wafer and heat spreader, P total : wafer switch and conduction loss, R th(j-c) : thermal resistance between the wafer and the surface of the package;
the heat dissipation evaluation method comprises the following steps:
s1, mounting the thermal resistance model on a machineA mechanical model, which is set at an ambient temperature T a Conditional operation to obtain T j 、V S And T ntc Is fitted to T j 、V S And T ntc Is a relationship of (2);
s2, according to T j 、V S And T ntc And the operating conditions of the mechanical model, to obtain the ambient temperature T a Under conditions limited by T jmax Mechanical model output power of (c) and obtaining ambient temperature T a Under conditions limited by T jmax Mechanical model output power, V S And T ntc Wherein T is jmax Indicating the maximum junction temperature of the wafer;
s3, setting a temperature protection point corresponding to the output power limit value of the mechanical model according to the relation curve obtained in the step S1 and the step S2, and setting a radiator and/or V after the output power of the mechanical model reaches the output power limit value S Is provided.
Further, the wafer with the junction temperature calculated is the wafer with the highest operation temperature in the plurality of wafers.
Further, in the step S1, the mechanical model is operated under different working conditions to obtain T under each working condition j 、V S And T ntc Fitting T under various working conditions j 、V S And T ntc Is a relationship of (2);
in the step S2, under different working conditions, according to T j 、V S And T ntc And the operating conditions of the mechanical model, to obtain the ambient temperature T a Under conditions limited by T jmax Mechanical model output power of (c) and obtaining ambient temperature T a Under conditions limited by T jmax Mechanical model output power, V S And T ntc Is a relationship of (2).
Further, the operating conditions of the mechanical model include an ambient temperature T a Operating voltage and operating time, and respectively reading T when the mechanical model operates c 、V S 、T ntc 、T a Values of operating voltage, and mechanical model output power;
the operating conditions of the mechanical model comprise an environment high-temperature operating condition and a maximum power operating condition.
Further, a mounting groove or a mounting hole is formed in one side, attached to the IPM module, of the radiator, the mounting groove or the mounting hole is used for mounting a test thermocouple, and the test thermocouple is used for measuring T c Values.
Further, the mechanical model is an air conditioner external hanging machine.
The heat dissipation evaluation system based on the intelligent power module wafer junction temperature is applied to the heat dissipation evaluation system;
the heat dissipation evaluation system comprises a mechanical model, wherein the mechanical model is provided with a thermal resistance model, the thermal resistance model comprises an IPM module and a radiator, the IPM module is attached to the radiator, and the radiator is correspondingly provided with a heat dissipation fan;
the IPM module comprises a substrate, a temperature sensor and a plurality of wafers, wherein the substrate, the temperature sensor and the wafers are packaged into a whole, and the temperature sensor is used for detecting the temperature T in the package ntc ；
The heat dissipation evaluation system further comprises a processing module and a storage module, and the temperature sensor and the heat dissipation fan are both in signal connection with the processing module;
the storage module stores a junction temperature calculation formula of the wafer:
junction temperature T of wafer j =T c +P total ×R th(j-c) Wherein T is j : junction temperature of wafer, T c : surface temperature of package between wafer and heat spreader, P total : wafer switch and conduction loss, R th(j-c) : thermal resistance between the wafer and the surface of the package;
the processor is used for acquiring T of the machine model in operation c 、V S And T ntc Obtaining T according to a junction temperature calculation formula of the wafer j 、V S And T ntc Is fitted to T j 、V S And T ntc Is a relationship of (2); according to T j 、V S And T ntc And the operating conditions of the mechanical model, to obtain the ambient temperature T a Under conditions limited by T jmax Mechanical model output power of (c) and obtaining ambient temperature T a Under conditions limited by T jmax Mechanical model output power, V S And T ntc Is a relationship of (2).
Further, a mounting groove or a mounting hole is formed in one side, attached to the IPM module, of the radiator, the mounting groove or the mounting hole is used for mounting a test thermocouple, and the test thermocouple is used for measuring T c Values.
Further, the mechanical model is an air conditioner external hanging machine.
The technical scheme provided by the invention can comprise the following beneficial effects:
the invention detects the surface temperature T of the package body between the wafer and the radiator of the intelligent power module c (case temperature), thermal resistance R between wafer and package surface th(j-c) (crusting thermal resistance) and using wafer switch and conduction loss P total To calculate and obtain the junction temperature T j . The accuracy of the junction temperature of the wafer is high. Through the operation of a mechanical model, T is obtained j 、V S And T ntc Is to obtain the ambient temperature T a Under conditions limited by T jmax Mechanical model output power, V S And T ntc I.e. by setting the temperature protection threshold of the IPM module corresponding to the output power limit value of the mechanical model, and the radiator and/or V after the output power of the mechanical model reaches the output power limit value S The adjustment method of the IPM module reduces the system electric control cost and improves the reliability of the IPM module application system. The heat dissipation evaluation method based on the intelligent power module wafer junction temperature is high in reliability, visual and easy to operate. Specifically, the actual load information and T of the actual product can be calibrated according to the evaluation result a And T ntc And a heat dissipation structure.
The invention realizes the calculation and test method of the junction temperature of the IPM module, the junction temperature of the IPM frequency conversion module is estimated or tested by the temperature of Tntc of the measuring module, the junction temperature estimation calibration is carried out on the actual product by utilizing the test result of the development prototype, an application engineer can use the IPM output capacity as much as possible according to the estimated junction temperature, the maximum application is realized, the estimation calibration is carried out by the standard junction temperature test, the verification of a new scheme is rapidly completed, the safe and reliable temperature protection functions of different environments and different working conditions are set according to the estimation calibration of the junction temperature test, and the reliability of the module application electric control system is improved.
Drawings
FIG. 1 is a schematic diagram of the structure of a thermal resistance model according to one embodiment of the invention;
FIG. 2 is a schematic diagram of the structure of an IPM module of a thermal resistance model;
FIG. 3 is a schematic diagram of a heat dissipation path of a wafer;
FIG. 4 is a T of one embodiment c Schematic diagram of the installation structure of the thermal resistance temperature sensor;
FIG. 5 is a T of another embodiment c Schematic diagram of the installation structure of the thermal resistance temperature sensor;
FIG. 6 is a schematic diagram of a heat sink according to an embodiment;
FIG. 7 is a T obtained by a high temperature robust run test at maximum frequency j 、V S Wind speed, T ntc Is a graph of the relationship of (2);
the 0101-radiator, the 0102-PCB, the 0103-first fixing screw, the 0104-second fixing screw, the 0105-IPM module, the 0106-heat-conducting adhesive, the 0201-plastic packaging material, the 0202-wafer, the 0203-solder, the 0204-copper layer, the 0205-temperature sensor, the 0207-substrate, the 01011-mounting hole and the 01012-mounting groove;
0601-long side of radiator, 0602-wide side of radiator, 0603-thick side of base plate of radiator, 0604-long side of tooth of radiator, 0605-thick side of tooth of radiator and 0606-all tooth length of radiator.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention.
In the description of the present invention, unless otherwise indicated, the meaning of "a plurality" is two or more.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
At present, an NTC temperature sensor is integrated in the IPM module, the NTC temperature sensor can only detect the temperature inside the IPM module, and the key for flexibly protecting the IPM module is how to set the compensation of the NTC temperature, carry out the estimation and calibration of the wafer junction temperature and evaluate the operation reliability of the IPM module.
The invention provides a heat radiation evaluation method based on the junction temperature of an intelligent power module wafer, aiming at the problems existing in the prior art, wherein a thermal resistance model used for the method comprises an IPM module and a radiator, the IPM module is attached to the radiator, the radiator is correspondingly provided with a heat radiation fan, and the wind speed of the heat radiation fan is V S ；
The IPM module comprises a substrate, a temperature sensor and a plurality of wafers, wherein the substrate, the temperature sensor and the wafers are packaged into a whole, and the temperature sensor is used for detecting the temperature T in the package ntc ；
Junction temperature T of wafer j =T c +P total ×R th(j-c) Wherein T is j : junction temperature of wafer, T c : surface temperature of package between wafer and heat spreader, P total : wafer switch and conduction loss, R th(j-c) : wafer to waferThermal resistance between the package surfaces;
the heat dissipation evaluation method comprises the following steps:
s1, installing the thermal resistance model on a mechanical model to enable the environmental temperature T of the mechanical model to be a Conditional operation to obtain T j 、V S And T ntc Is fitted to T j 、V S And T ntc Is a relationship of (2);
s2, according to T j 、V S And T ntc And the operating conditions of the mechanical model, to obtain the ambient temperature T a Under conditions limited by T jmax Mechanical model output power of (c) and obtaining ambient temperature T a Under conditions limited by T jmax Mechanical model output power, V S And T ntc Wherein T is jmax Indicating the maximum junction temperature of the wafer;
s3, setting a temperature protection point corresponding to the output power limit value of the mechanical model according to the relation curve obtained in the step S1 and the step S2, and setting a radiator and/or V after the output power of the mechanical model reaches the output power limit value S Is provided.
The invention detects the surface temperature T of the package body between the wafer and the radiator of the intelligent power module c (case temperature), thermal resistance R between wafer and package surface th(j-c) (crusting thermal resistance) and using wafer switch and conduction loss P total To calculate and obtain the junction temperature T j . The accuracy of the junction temperature of the wafer is high. Through the operation of a mechanical model, T is obtained j 、V S And T ntc Is to obtain the ambient temperature T a Under conditions limited by T jmax Mechanical model output power, V S And T ntc The temperature protection point of the IPM module corresponding to the output power limit value of the mechanical model and the radiator and/or V after the output power of the mechanical model reaches the output power limit value can be set S The adjustment method of the IPM module reduces the system electric control cost and improves the reliability of the IPM module application system. The intelligent power module wafer junction temperature-based heat dissipation evaluation methodThe method has high reliability and is visual and easy to operate. Specifically, the actual load information and T of the actual product can be calibrated according to the evaluation result a and T ntc and a heat dissipation structure.
It should be noted that the size and thermal resistance of the radiator are basic conditions, and the heat dissipation evaluation method of the invention is completed based on the condition that the size and thermal resistance of the radiator are unchanged. Total thermal resistance R of radiator zo =R th +R thk Wherein R is th : heat resistance of solid heat transfer in radiator, R thk : heat transfer resistance between the heat sink and the air. When V is S When the adjustment of the (a) can not meet the heat dissipation requirement of the IPM module, adjusting the radiator: the material of the radiator is replaced or the radiating area of the radiator is adjusted. Ambient temperature T a The temperature of the environment in which the mechanical model is operated is usually the temperature in a laboratory with constant temperature, namely the ambient temperature T, when the heat dissipation evaluation mode is adopted a 。
Preferably, the wafer with junction temperature calculated is the wafer with highest operation temperature in a plurality of wafers, so that the output power limit value of the mechanical model is set, and the output power of the mechanical model reaches the output power limit value and then V S The adjusting method of the IPM module can ensure the normal operation of the IPM module.
Specifically, referring to fig. 1, the thermal resistance model includes an IPM module and a heat sink, the IPM module is mounted on a PCB, a heat conductive adhesive is disposed between the IPM module and the heat sink, and two ends of the IPM module are connected to the heat sink through second fixing screws, so as to ensure that the heat sink can conduct heat effectively with the IPM module.
In one embodiment of the present invention, referring to fig. 2, the ipm module includes a substrate, a temperature sensor, and a plurality of wafers, which are packaged as one body, and as can be seen from fig. 2, the substrate, the temperature sensor, and the plurality of wafers are all packaged in a molding compound. The surface of the substrate is provided with a conductive circuit (copper layer), and the wafer is welded on the conductive circuit.
In the whole IPM module, the heat dissipation direction of the wafer is mainly divided into an upper direction and a lower direction, and the heat dissipation direction of the wafer is as follows: wafer, plastic packaging material, environment (air), and the thermal resistance from the plastic packaging material to the air is R thc2a The thermal resistance of the wafer and the plastic package material is R thjc2 The method comprises the steps of carrying out a first treatment on the surface of the Downward, the heat dissipation direction of the wafer is: wafer, copper layer, substrate, plastic packaging material, heat conducting adhesive, radiator, environment (air), wafer, copper layer, substrate and plastic packaging material, wherein the thermal resistance of the heat conducting adhesive is R thjc1 Plastic packaging material, heat conducting adhesive, and heat resistance of radiator as R thch Radiator-environmental (air) thermal resistance R thha . The heat dissipation path of the obtained wafer is shown in fig. 3 according to the heat dissipation direction of the wafer and the thermal resistance during the heat dissipation process. In FIG. 3, P1 is the heat dissipation path from the wafer to the bottom of the IPM module and the heat sink, and P2 is the heat dissipation path from the wafer to the top of the IPM module, due to R thch +R thha <R thc2a P1 is the primary power dissipation channel. Meanwhile, the heat radiation structure (heat radiation air quantity and heat radiation air duct) is considered to be R thha R is the root of R thc2a Has an effect, so that the subsequent steps of the method of the invention use the wind speed V of the cooling fan S 、T j And T ntc Is a fit of the curve. In FIG. 3, R thjn Is the thermal resistance from the temperature sensor to the plastic packaging material, R thjnc2 Is the upward thermal resistance: temperature sensor-plastic packaging material→environment (air); r is R thjnc1 Is the downward thermal resistance: temperature sensor-copper layer- & gt substrate- & gt plastic packaging material- & gt heat conducting adhesive- & gt radiator- & gt environment (air); t (T) c1 Is the upper surface temperature of the package body, T c2 Is the temperature of the lower surface of the packaging body; t (T) h Is the radiator temperature.
And the loss of the IPM consists of the conduction loss and the switching loss of the wafer, so that the loss of the driving chip is negligible. The junction temperature T on a single wafer is calculated by the following formula j ：T j =T c +P total ×R th(j-c) Wherein T is j : junction temperature of wafer, T c : surface temperature of package between wafer and heat spreader, P total : wafer openingThe off and on losses, R th(j-c) : thermal resistance between the wafer and the surface of the package. R is R th(j-c) From R thjc2 And R is thjc1 And adding the obtained products. P (P) total For calculation or actual measurement.
The invention relates to a reliable and simple method for measuring the junction temperature of a wafer by using a crusting thermal resistance method, which comprises the steps of firstly testing the surface temperature of a packaging body, passing through the crusting thermal resistance, and then using a formula T j =T c +P total ×R th(j-c) The accurate junction temperature of the wafer can be obtained. Surface temperature T of package between wafer and heat spreader c For measurement.
Preferably, in an embodiment of the present invention, a side of the heat sink attached to the IPM module is provided with a mounting groove (fig. 5) or a mounting hole (fig. 4) for mounting a test thermocouple for measuring T c Values. It can be appreciated that the thermal resistance model and the mechanical model of the invention are only used for evaluating the junction temperature of the wafer of the intelligent power module to set the output power limit value of the mechanical model, and V after the output power of the mechanical model reaches the output power limit value S When the thermal resistance model is applied to actual mass production, the measurement T is not required to be set c Is provided.
It should be noted that, the junction temperature estimation calibration is performed on the actual product by using the test results obtained by the prototype of the thermal resistance model and the mechanical model, and the prototype and the actual product must satisfy the conditions: the junction temperature estimation calibration of the actual product by using the test result of the development prototype is realized, and the following conditions must be satisfied: the load power and the control method are identical; the system thermal resistance parameters of the two components are the same, and the system thermal resistance parameters comprise a radiator, thermal contact resistance of the radiator and a module, a radiating structure and the like; the IPM module structure and the operating conditions of both must be identical. When any of the above parameters of the actual product are changed, the actual product is theoretically recalibrated by the prototype test.
Further, in the step S1, the mechanical model is operated under different working conditions to obtain T under each working condition j 、V S And T ntc Fitting T under various working conditions j 、V S And T ntc Is a relationship of (2);
in the step S2, under different working conditions, according to T j 、V S And T ntc And the operating conditions of the mechanical model, to obtain the ambient temperature T a Under conditions limited by T jmax Mechanical model output power of (c) and obtaining ambient temperature T a Under conditions limited by T jmax Mechanical model output power, V S And T ntc Is a relationship of (2).
Further, the operating conditions of the mechanical model include an ambient temperature T a Operating voltage and operating time, and respectively reading T when the mechanical model operates c 、V S 、T ntc 、T a Values of operating voltage, and mechanical model output power; the operating conditions of the mechanical model comprise an environment high-temperature operating condition and a maximum power operating condition.
It can be appreciated that the mechanical model is operated under different working conditions, especially under extreme conditions such as ambient temperature, maximum power, etc., the obtained relationship curve is V after the output power of the mechanical model reaches the output power limit value for more accurately setting the output power limit value of the mechanical model S The adjusting method is more reasonable, so as to ensure the normal operation of the actual product.
Taking a mechanical model as an air conditioner external hanging machine and a radiator as a fin radiator as an example. Referring to fig. 6, when the heat sink is a fin heat sink:
R zo =l/(1.16Ks×L×b×n)+[1-0.152(Vs×L )1/10 ]L 1/5 /(5.12Vs 4/5 l x S), where Ks is the thermal conductivity of the metallic material of the heat sink, b is the tooth thickness (heat sink tooth thickness edge 0605),lis tooth height (radiator tooth length 0604), n is radiator tooth number, S is radiator cross section perimeter, and L is radiator length (radiator length 0601).
Calculating the junction temperature of IGBT chips in the IPM module, and operating conditions of the mechanical model air conditioner on-hook are as follows:
1. maximum frequency high temperature robust run test
Operating condition requirement 1: the inner side is 35/27 ℃, and the outer side is 38/29 ℃; test voltage: 264V, 220V, 187V and 150V; the testing method comprises the following steps: continuously running for 2 hours after the working condition is stable, stopping the machine for 3 minutes, and then regulating the voltage, wherein the voltage is 264V, 220V, 187V and 150V in sequence;
2. maximum frequency running heat test
The working condition requirements are as follows: the inner side is at 27/20 ℃, and the outer side is at 36/27 ℃; test voltage: 264V, 220V, 187V and 150V; the testing method comprises the following steps: and continuously running for 2 hours after the working condition is stable, stopping the machine for 3 minutes, and then regulating the voltage, wherein the voltages are 264V, 220V, 187V and 150V in sequence.
3. Outdoor variable working condition operation heating
The working condition requirements are as follows: 1. the inner side is at 27/20 ℃ and the outer side is at 50/38 ℃; test voltage: 264V, 220V, 187V, and 150V; the testing method comprises the following steps: and continuously running for 2 hours after the working condition is stable, stopping the machine for 3 minutes, and then regulating the voltage, wherein the voltages are 264V, 220V, 187V and 150V in sequence.
Operating under the working conditions, T under four voltages can be obtained respectively j 、V S And T ntc Is a relationship of (2). In the working conditions, the temperature of the inner side is 35/27 ℃, and the temperature of the outer side is 38/29℃: the temperatures of 35 ℃ and 38 ℃ are the ambient temperature of the place where the air conditioner external unit is placed, and the temperatures of 27 ℃ and 29 ℃ are the ambient temperature of the place where the air conditioner internal unit is placed.
FIG. 7 is a T at a voltage for a maximum frequency high temperature robust operation test j 、V S Wind speed, T ntc Is a relationship of (3). V (V) S The greater the wind speed, T j And T is ntc The gap becomes smaller. From T j 、V S Wind speed, T ntc Can be based on the relation of the test T ntc Estimating the T at that time j Thereby evaluating whether the operating temperature thereof is in a safe and reliable range. Other voltages and working conditions are fitted to T by adopting the same method j 、V S Wind speed, T ntc Is a relationship of (2).
According to T in the test ntc The corresponding frequency and the corresponding power are output, and the junction temperature characteristics of the IGBT chip are combined,setting a temperature protection point. For example: IGBT chip resistant to 170 ℃ and T under maximum frequency operation heating condition ntc The temperature of (C) is 120 ℃, and the T is combined j 、V S Wind speed, T ntc Define T ntc T at 120 DEG C j The safe and reliable working temperature of the IGBT is within 130 ℃ when the temperature is 130 ℃, and the protection temperature point under the working condition can be set as T ntc =120℃. When under the working condition T ntc The temperature of (2) exceeds 120 ℃, according to the ambient temperature T a Under conditions limited by T jmax Mechanical model output power, V S And T ntc For V S And adjusting. Referring to FIG. 7, if three wind speeds V are set S Large, V S Neutralization V S During experiments, the mechanical model is firstly formed by V S When the small frequency output power is fixed and the mechanical model is in the set working condition, if T j Temperature exceeding T jmax Then change wind speed V S In the above working condition; when the frequency output power required by the mechanical model is fixed, if T j The temperature also exceeds T jmax Then change wind speed V S Large. And wind velocity V S Large, V S Neutralization V S The small is based on the output power, V of the mechanical model S And T ntc Is set by the relation curve of the (c).
When the wind speed is adjusted to T j When the temperature influence is not great, the material of the radiator is adjusted or the radiating area of the radiator is increased so as to lead T j At a temperature of T jmax Hereinafter, alternatively, the wind speed and the radiator performance may also be adjusted at the same time. Therefore, the radiator structure in the thermal resistance model and the wind speed adjusting method of the radiating fan when the mechanical model operates are set. .
Correspondingly, the invention provides a heat dissipation evaluation system based on the junction temperature of the intelligent power module wafer, and the heat dissipation evaluation method based on the junction temperature of the intelligent power module wafer is applied to the heat dissipation evaluation system;
the heat dissipation evaluation system comprises a mechanical model, wherein the mechanical model is provided with a thermal resistance model, the thermal resistance model comprises an IPM module and a radiator, the IPM module is attached to the radiator, and the radiator is correspondingly provided with a heat dissipation fan;
the IPM module comprises a substrate, a temperature sensor and a plurality of wafers, wherein the substrate, the temperature sensor and the wafers are packaged into a whole, and the temperature sensor is used for detecting the temperature T in the package ntc ；
The heat dissipation evaluation system further comprises a processing module and a storage module, and the temperature sensor and the heat dissipation fan are both in signal connection with the processing module;
the storage module stores a junction temperature calculation formula of the wafer:
junction temperature T of wafer j =T c +P total ×R th(j-c) Wherein T is j : junction temperature of wafer, T c : surface temperature of package between wafer and heat spreader, P total : wafer switch and conduction loss, R th(j-c) : thermal resistance between the wafer and the surface of the package;
the processor is used for acquiring T of the machine model in operation c 、V S And T ntc Obtaining T according to a junction temperature calculation formula of the wafer j 、V S And T ntc Is fitted to T j 、V S And T ntc Is a relationship of (2); according to T j 、V S And T ntc And the operating conditions of the mechanical model, to obtain the ambient temperature T a Under conditions limited by T jmax Mechanical model output power of (c) and obtaining ambient temperature T a Under conditions limited by T jmax Mechanical model output power, V S And T ntc Is a relationship of (2).
Further, a mounting groove or a mounting hole is formed in one side, attached to the IPM module, of the radiator, the mounting groove or the mounting hole is used for mounting a test thermocouple, and the test thermocouple is used for measuring T c Values.
Further, the mechanical model is an air conditioner external hanging machine.
Other components and operation of a method and system for evaluating heat dissipation based on wafer junction temperature of an intelligent power module according to embodiments of the present invention are known to those skilled in the art, and will not be described in detail herein.
In the description herein, reference to the term "embodiment," "example," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the invention, the scope of which is defined by the claims and their equivalents.
Claims (9)
1. A heat radiation evaluation method based on the junction temperature of an intelligent power module wafer is characterized in that a thermal resistance model used for the method comprises an IPM module and a radiator, wherein the IPM module is attached to the radiator, the radiator is correspondingly provided with a heat radiation fan, and the wind speed of the heat radiation fan is V S ；
The IPM module comprises a substrate, a temperature sensor and a plurality of wafers, wherein the substrate, the temperature sensor and the wafers are packaged into a whole, and the temperature sensor is used for detecting the temperature T in the package ntc ；
Junction temperature T of wafer j =T c +P total ×R th（j-c） Wherein T is j : junction temperature of wafer, T c : surface temperature of package between wafer and heat spreader, P total : wafer switch and conduction loss, R th（j-c） : thermal resistance between the wafer and the surface of the package;
the heat dissipation evaluation method comprises the following steps:
s1, installing the thermal resistance model on a mechanical model to enable the mechanical model to be at the ambient temperature T a Conditional operation to obtain T j 、V S And T ntc Is fitted to T j 、V S And T ntc Is a relationship of (2);
s2, according to T j 、V S And T ntc And the operating conditions of the mechanical model, to obtain the ambient temperature T a Under conditions limited by T jmax Mechanical model output power of (c) and obtaining ambient temperature T a Under conditions limited by T jmax Mechanical model output power, V S And T ntc Wherein T is jmax Indicating the maximum junction temperature of the wafer;
s3, setting a temperature protection point corresponding to the output power limit value of the mechanical model according to the relation curve obtained in the step S1 and the step S2, and setting a radiator and/or V after the output power of the mechanical model reaches the output power limit value S Is provided.
2. The heat dissipation evaluation method according to claim 1, wherein the wafer for which the junction temperature is calculated is a wafer having a highest operating temperature among a plurality of wafers.
3. The heat dissipation evaluation method according to claim 1, wherein in the step S1, the mechanical model is operated under different working conditions to obtain T under each working condition j 、V S And T ntc Fitting T under various working conditions j 、V S And T ntc Is a relationship of (2);
in the step S2, under different working conditions, according to T j 、V S And T ntc And the operating conditions of the mechanical model, to obtain the ambient temperature T a Under conditions limited by T jmax Mechanical model output power of (c) and obtaining ambient temperature T a Under conditions limited by T jmax Mechanical model output power, V S And T ntc Is a relationship of (2).
4. A heat dissipation assessment method according to claim 3, wherein the operating conditions of said mechanical model comprise an ambient temperature T a Operating voltage and operating time, and respectively reading T when the mechanical model operates c 、V S 、T ntc 、T a Values of operating voltage, and mechanical model output power;
the operating conditions of the mechanical model comprise an environment high-temperature operating condition and a maximum power operating condition.
5. The heat dissipation evaluation method according to claim 1, wherein a mounting groove or a mounting hole is provided on a side of the heat sink attached to the IPM module, the mounting groove or the mounting hole being used for mounting a test thermocouple for measuring T c Values.
6. The heat dissipation assessment method of claim 1, wherein the mechanical model is an air conditioner external hanging machine.
7. A heat dissipation evaluation system based on an intelligent power module wafer junction temperature, characterized in that the heat dissipation evaluation method based on an intelligent power module wafer junction temperature of any one of claims 1-6 is applied to the heat dissipation evaluation system;
the heat dissipation evaluation system comprises a mechanical model, wherein the mechanical model is provided with a thermal resistance model, the thermal resistance model comprises an IPM module and a radiator, the IPM module is attached to the radiator, and the radiator is correspondingly provided with a heat dissipation fan;
the IPM module comprises a substrate, a temperature sensor and a plurality of wafers, wherein the substrate, the temperature sensor and the wafers are packaged into a whole, and the temperature sensor is used for detecting the temperature T in the package ntc ；
The evaluation system further comprises a processing module and a storage module, wherein the temperature sensor and the cooling fan are both in signal connection with the processing module;
the storage module stores a junction temperature calculation formula of the wafer:
junction temperature T of wafer j =T c +P total ×R th(j-c) Wherein T is j : junction temperature of wafer, T c : surface temperature of package between wafer and heat spreader, P total : wafer switch and conduction loss, R th(j-c) : thermal resistance between the wafer and the surface of the package;
total thermal resistance R of the radiator zo =R th +R th k, wherein R is th : heat resistance of solid heat transfer in radiator, R thk : heat transfer resistance between the radiator and air;
the processor is used for acquiring T of the machine model in operation c 、V S And T ntc Obtaining T according to a junction temperature calculation formula of the wafer j 、V S And T ntc Is fitted to T j 、V S And T ntc Is a relationship of (2); according to T j 、V S And T ntc And the operating conditions of the mechanical model, to obtain the ambient temperature T a Under conditions limited by T jmax Mechanical model output power of (c) and obtaining ambient temperature T a Under conditions limited by T jmax Mechanical model output power, V S And T ntc Is a relationship of (2).
8. The heat dissipation assessment system according to claim 7, wherein a side of the heat sink to which the IPM module is attached is provided with a mounting groove or a mounting hole for mounting a test thermocouple for measuring T c Values.
9. The heat dissipation assessment system of claim 7, wherein the mechanical model is an air conditioner external hanging machine.
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| CN117419944A (en) * | 2023-12-19 | 2024-01-19 | 北京蓝威技术有限公司 | Method for testing heat dissipation of fin radiator under natural convection |
| CN117419944B (en) * | 2023-12-19 | 2024-03-08 | 北京蓝威技术有限公司 | Method for testing heat dissipation of fin radiator under natural convection |
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