CN117019742A - Manufacturing method of acid soaking carrier - Google Patents
Manufacturing method of acid soaking carrier Download PDFInfo
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- CN117019742A CN117019742A CN202310998863.1A CN202310998863A CN117019742A CN 117019742 A CN117019742 A CN 117019742A CN 202310998863 A CN202310998863 A CN 202310998863A CN 117019742 A CN117019742 A CN 117019742A
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- Prior art keywords
- bearing
- disc
- bearing mechanism
- graphite
- circular ring
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- 239000002253 acid Substances 0.000 title claims abstract description 45
- 238000002791 soaking Methods 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 67
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 67
- 239000010439 graphite Substances 0.000 claims abstract description 67
- 230000002093 peripheral effect Effects 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 29
- 238000004140 cleaning Methods 0.000 abstract description 13
- 238000012423 maintenance Methods 0.000 abstract description 3
- 230000000737 periodic effect Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000861 blow drying Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000009461 vacuum packaging Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a manufacturing method of an acid soaking carrier, which comprises the following steps: the acid soaking carrier is designed into an upper hollow structure and a lower hollow structure, wherein the upper layer is a first bearing mechanism, the lower layer is a second bearing mechanism, the second bearing mechanism is used for bearing a graphite tray, and the first bearing mechanism forms a peripheral support of a clamp and is connected with the second bearing mechanism; and a positioning sliding mechanism is arranged at the connecting part of the second bearing mechanism and the graphite tray, and the positioning sliding mechanism drives the graphite tray to move along the radial direction of the center of the second bearing mechanism. The acid soaking carrier designed by the invention can be used for cleaning graphite trays with different sizes through the movement of the sliding block, so that the periodic maintenance of the graphite trays with different sizes is met, and the maintenance cost is reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing equipment, in particular to a manufacturing method of an acid soaking carrier.
Background
There is a significant step in the fabrication of chips, called epitaxy, which is the deposition of a thin monocrystalline layer on a monocrystalline substrate, the newly deposited layer being called the epitaxial layer, epitaxy provides device designers with great flexibility in optimizing device performance, controlling the doping thickness, concentration, profile of the epitaxial layer independently of the silicon substrate, which control can be achieved by doping during epitaxial growth, which reduces the lock reaction in CMOS devices, the most common epitaxial reaction in IC fabrication being a high temperature CVD system. In some applications under investigation, epitaxy can meet future high performance IC requirements, such as elevated source drain structure S/D to achieve low contact resistance. The raised source-drain structure can be formed by depositing epitaxial silicon at the source, drain and gate regions of the device, which effectively increases the surface area of the source and drain and thus reduces sheet resistance, similar to a larger diameter wire with a smaller resistance than a smaller diameter wire with the same material. During epitaxial deposition, undesired dopant non-uniformities may occur because doped epitaxial layers are typically grown on heavily doped substrates and the epitaxial layers are self-doped. This phenomenon occurs either as a result of evaporation of the doping impurities from the substrate or spontaneously due to corrosion of the silicon wafer surface by chlorine during deposition. These impurities enter the gas flow and cause undesired epitaxial doping. As epitaxial layer growth, there are few impurities from the wafer and the impurities in the gas stream reach a constant level. A further irregular doping form is the diffusion of the substrate as a source of doping impurities into the epitaxial layer, which is called diffusion. Both self-doping and out-diffusion can affect the transition of impurities between the substrate and the epitaxial layer, resulting in an impurity profile that is not as steep as expected. If the materials of the film and the substrate are the same, the film thus grown is called homoepitaxy. The film grown from the material-to-material inconsistency is heteroepitaxy. There are many materials such as GaN, inP, gaAs for epitaxial growth, and no matter which material film is grown, the substrate tray is needed, and the most safe and proper tray is made of graphite at present, but after the film is grown, many impurities remain on the graphite tray, and the graphite tray needs to be treated cleanly for reuse.
At present, the industry processes graphite trays in two main ways: one way is to use a high temperature bak oven to bake, the principle of which is as follows: a plurality of groups of graphite components are connected into a heating annular surface in the rake furnace, graphite heats and toasts a graphite tray after the electrodes are electrified, then P-level pure nitrogen is used for purging from the front, and impurities are blown onto a rear baffle plate to achieve the aim of cleaning the graphite tray. The other mode is to treat the graphite tray with the long film by using aqua regia, the principle of which is to treat the graphite tray by using chemical reaction and chemical corrosion, and the aqua regia is generally prepared by mixing nitric acid and hydrochloric acid, wherein the ratio is 3:1. Aqua regia treatment is more advantageous than the bak baking in terms of cleaning quality and is relatively much less costly. The aqua regia treatment method comprises the following steps: acid preparation, acid soaking, cleaning, overflow, purging, baking and vacuum standby, wherein the acid soaking step is the most important factor related to the cleaning quality of the graphite tray. When acid is prepared, the placement state of the graphite disc, the later acid adding dosage, the acid adding time and the like have great influence on the graphite disc, when process verification is carried out after periodical maintenance, the parts in the furnace are red after baking, so that the process has problems, the process has to be maintained again, the utilization rate of equipment is reduced, and the labor investment and the economic cost are increased.
However, in the existing acid soaking process, acid soaking barrels and acid soaking clamps with different sizes are required to be prepared for graphite trays with different sizes, so that the cleaning process of the graphite trays with different sizes is complicated and inconvenient, and meanwhile, the cost is increased.
Disclosure of Invention
The invention aims to solve the problem that the existing acid soaking clamp cannot meet the acid soaking and cleaning requirements of graphite trays with different sizes, and provides a manufacturing method of an acid soaking carrier.
The aim of the invention is realized by the following technical scheme:
the method mainly provides a manufacturing method of an acid soaking carrier, which is used for compatibly bearing a multi-size graphite tray, and comprises the following steps:
the acid soaking carrier is designed into an upper hollow structure and a lower hollow structure, wherein the upper layer is a first bearing mechanism, the lower layer is a second bearing mechanism, the second bearing mechanism is used for bearing a graphite tray, and the first bearing mechanism forms a peripheral support of a clamp and is connected with the second bearing mechanism;
and a positioning sliding mechanism is arranged at the connecting part of the second bearing mechanism and the graphite tray, and the positioning sliding mechanism drives the graphite tray to move along the radial direction of the center of the second bearing mechanism.
As a preferred aspect, a method for manufacturing an acid soaking carrier, the first carrying mechanism comprises a hollow disc and a first support column for supporting the disc; the second bearing mechanism comprises a circular ring, the positioning sliding mechanism comprises a plurality of sliding blocks arranged on the circular ring and used for bearing the graphite tray, and sliding grooves enabling the sliding blocks to move along the radial direction of the circular ring are formed in the sliding blocks.
As a preferred option, a method for manufacturing the acid soaking carrier is to arrange the disc and the circular ring concentrically.
As a preferred aspect, a method for manufacturing an acid soaking carrier is provided, wherein a plurality of first round holes and/or annular grooves for reducing buoyancy are formed in the disc.
As a preferred option, the manufacturing method of the acid soaking carrier, the first round holes are symmetrically arranged at two sides of the disc, and the annular grooves are symmetrically arranged at two sides of the first round holes.
As a preferred option, the manufacturing method of the acid soaking carrier, the disc is in threaded connection with the top end of the first support column, the top end of the second support column is in threaded connection with the disc, and the bottom end of the second support column is in threaded connection with the circular ring.
As a preferred option, the manufacturing method of the acid soaking carrier, the sliding block is L-shaped and comprises a bearing part and a clamping part, two sliding grooves are formed in the part, close to the circular ring, of the bearing part, and screws for positioning the sliding grooves are arranged on the circular ring.
As a preferred option, a method for manufacturing the acid soaking carrier, the bearing component and the clamping component are rectangular.
As a preferred aspect, the manufacturing method of the acid soaking carrier includes that the diameter of the disc is 300 mm, the thickness of the disc is 3 mm, the inner radius of the ring is 100 mm, the outer radius of the ring is 110 mm, and the thickness of the ring is 2 mm.
As a preferred option, the method for manufacturing the acid soaking carrier, the length of the first support column is 400 mm, and the length of the second support column is 200 mm.
It should be further noted that the technical features corresponding to the above options may be combined with each other or replaced to form a new technical scheme without collision.
Compared with the prior art, the invention has the beneficial effects that:
(1) According to the invention, the graphite tray is driven to move radially along the center of the second bearing mechanism by designing the positioning sliding mechanism, so that the acid soaking carrier can be compatible with soaking and cleaning of graphite trays with different sizes (2, 3, 4 and 6 inches), the problem that the graphite tray is soaked by the existing chemicals is solved, and the difficulties including safety, economy and stability are solved; in addition, the peripheral sizes of the graphite trays corresponding to the epitaxial wafers with different sizes are not different, the difference value is smaller than the expansion range of the sliding block, the epitaxial wafers with different sizes can be satisfied, and the epitaxial process has more reliable wafer trays; meanwhile, the efficiency of processing the graphite tray can be greatly improved, and the processing quality of the graphite tray is improved, so that the stability of an epitaxial process is improved, and the benefits of a product yield increasing department and a company are further improved.
(2) In one example, by providing a plurality of first circular holes and annular grooves on the disk, buoyancy during acid soaking can be reduced, so that the carrier can be well immersed in acid by carrying the graphite tray.
(3) In one example, the bearing structures are connected through threads to form a basic mechanism for bearing the graphite tray, so that the safety and reliability of the structure are ensured.
Drawings
FIG. 1 is a schematic diagram of an assembled structure of an acid soaking carrier compatible with a multi-sized graphite tray designed according to the method of the present invention;
FIG. 2 is a top view of an acid-bubbling carrier compatible with multi-sized graphite trays according to an embodiment of the invention;
fig. 3 is a schematic structural view of a ring according to an embodiment of the present invention.
Reference numerals in the drawings: 1-a disc; 2-a first support column; 3-a circular ring; 4-a slider; 5-sliding grooves; 6-a second support column; 11-a first round hole; 12-an annular groove; 13-a second round hole; 14-a third round hole; 15-a first screw; 16-a second screw; 17-third screw.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully understood from the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that directions or positional relationships indicated as being "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are directions or positional relationships described based on the drawings are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the apparatus or elements to be referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
In an exemplary embodiment, a method of manufacturing an acid-bubbling carrier for compatibly carrying a multi-sized graphite tray is provided, the method comprising:
the acid soaking carrier is designed into an upper hollow structure and a lower hollow structure, wherein the upper layer is a first bearing mechanism, the lower layer is a second bearing mechanism, the second bearing mechanism is used for bearing a graphite tray, and the first bearing mechanism forms a peripheral support of a clamp and is connected with the second bearing mechanism;
and a positioning sliding mechanism is arranged at the connecting part of the second bearing mechanism and the graphite tray, and the positioning sliding mechanism drives the graphite tray to move along the radial direction of the center of the second bearing mechanism.
Specifically, the graphite tray is driven to move radially along the center of the second bearing mechanism by the design of the positioning sliding mechanism, so that the acid soaking carrier can be compatible with soaking and cleaning of graphite trays with different sizes (2, 3, 4 and 6 inches).
Further, referring to fig. 1-3, in an exemplary embodiment, a multi-sized (2, 3, 4, 6 inch) graphite pallet compatible acid-soaking carrier designed according to the above method is provided, the carrier comprising:
an upper first bearing mechanism comprising a hollow disc 1 and a first support column 2 for supporting the disc 1;
the lower layer second bearing mechanism comprises a circular ring 3;
the positioning sliding mechanism comprises a plurality of sliding blocks 4 which are arranged on the circular ring 3 and used for bearing a graphite tray; the sliding block 4 is provided with a sliding groove 5 which enables the sliding block 4 to move along the radial direction of the circular ring 3;
the second bearing mechanism is connected with the first bearing mechanism through a second support column 6 to form an upper-lower hollow structure. The disc 1 and the circular ring 3 are arranged on a concentric shaft, the carrier is arranged by taking the disc 1 and the circular ring 3 as base points, and is connected with the socket head cap screws, the columns and the threaded holes, so that the graphite tray can be safely and reliably borne.
Specifically, the graphite trays with different sizes (2, 3, 4 and 6 inches) can be compatible with soaking and cleaning by the way that the sliding block 4 carries the graphite trays to move along the radial direction of the circular ring 3.
The disc 1 is in threaded connection with the top end of the first support column 2, as shown in fig. 1, four long columns (the first support column 2) are in threaded connection with the disc 1 to form the periphery of the carrier, and the periphery is a basic mechanism for bearing the graphite tray and a frame for connecting the second bearing mechanism. Four round holes (second round holes 13) are drilled on the disc 1 at an average angle, the top ends of the four first support columns 2 are drilled with internal thread holes, the depth is 15 mm, the diameter of each hole is 5 mm, the first support columns 2 are connected through the second round holes 13 and four first screws 15 (internal hexagonal screws), the diameter of each second round hole 13 is slightly smaller than the diameter of the outer ring of the first support column 2, the disc and the support columns are guaranteed to be connected more stably, and the bearing capacity is stronger. The thickness of the cap heads of the four inner hexagon screws is 2 mm, the stress concentration point is increased, the length of the screws is 18 mm, the diameter of the screws is 5 mm, and the screws and the column threaded holes are used as the condition for fixing the peripheral disc.
Further, a first round hole 11 and an annular groove 12 for reducing buoyancy are scratched on the peripheral disc 1, the first round hole 11 is symmetrically arranged on two sides of the disc 1, and the annular groove 12 is symmetrically arranged on two sides of the first round hole 11. Specifically, the diameter of the peripheral large disc is 300 mm, the thickness is 3 mm, first round holes 11 with the radius of the circle center being 10 mm are punched at the positions, which are equidistant from the edge, of two ends of the 180-degree axis, of the large disc, the 180-degree axis rotates anticlockwise by 45 degrees to find a new axis through the circle center of the disc 1, two first round holes 11 with the radius of the circle center being 10 mm are punched at the positions, which are 30 mm away from the edge of the disc, of the large disc on the new axis, and four first round holes 11 are punched on the disc 1 in total. An annular groove 12 is respectively cut out between the first round holes 11 on the same side: the circle center of the disc 1 is taken as a base point, an inner ring line of the annular groove is made with the radius of 110 mm, the circle center of the disc 1 is taken as a base point, an outer ring line of the annular groove 12 is made with the radius of 130 mm, a point is found on a circle with the radius of 120 mm as the circle center, a semicircular graph tangent to the inner line and the outer line of the annular groove 12 is made with the radius of 10 mm, and the same annular groove 12 is also scratched in the symmetrical direction. The buoyancy of the disc 1 is greatly reduced by the four first round holes 11 and the two annular grooves 12 on the disc, so that the carrier can be well immersed in acid by carrying the graphite tray.
Further, the top end of the second support column 6 is in threaded connection with the disc 1, and the bottom end of the second support column 6 is in threaded connection with the ring 3. Specifically, a clamping circular hole structure (a third circular hole 14 in the figure) for connecting the second support column 6 and the circular ring 3 is further arranged on the disc 1, wherein a point on the axes of 90 degrees, 180 degrees, 270 degrees and 360 degrees is found, the circle center diameter is 10 mm, and the tangent of the positioning circular hole is between the radius of 100 mm and the radius of 110 mm and is used for connecting the circular ring 3. Screw holes are drilled at two ends of the short column (the second support column 6), and the second support column 6 is respectively connected with the disc 1 and the circular ring 3 through second screws 16. Here, standard of internal threaded hole: the diameter of the hole is 5 mm, the depth of the hole is 15 mm, the outer diameter of the column is 15 mm, and the matching relation of the disc 1, the circular ring 3 and the column is met.
Further, the inner radius of the circular ring 3 is 100 mm, the outer radius of the circular ring 3 is 110 mm, and the thickness of the circular ring 3 is 2 mm. The length of the first support column is 400 mm, and the length of the second support column is 200 mm. Four positioning round holes corresponding to the third round holes 14 are drilled on the round ring 3 and used for fixing the round ring 3 so as to achieve the purpose of bearing the graphite tray, the diameter of the positioning round holes is still 10 mm by referring to the arrangement of the third round holes 14 on the round disc 1, and the positioning round holes are formed by finding points on axes of 90 degrees, 180 degrees, 270 degrees and 360 degrees as circle centers. Internal threaded holes are formed in two sides of the 45-degree axis between the two round holes: the diameter is 2 mm, the depth is 2 mm, and the tangential direction is between a radius 104 mm and a radius 106 mm circle.
In one example, the sliding block 4 is L-shaped and includes a bearing member and a clamping member, where the bearing member and the clamping member are both rectangular, two sliding grooves 5 are provided at a portion of the bearing member near the ring 3, and a screw (third screw 17) for positioning the sliding grooves 5 is provided on the ring 3. Specifically, the bearing component is a rectangular block, the bearing component is positioned on the L-shaped flat side, the length is 30 mm, the width is 10 mm, the thickness is 5 mm, the clamping component is also a rectangular block, the width is 10 mm, the height is 10 mm, two rectangular sliding grooves 5 are respectively formed in the two ends of the central axis of the bearing component, which are 2 mm away from the left edge, of the rectangular block and are used for carrying the movement of the sliding blocks 4, the length of each rectangular sliding groove 5 is 10 mm, the width is 3 mm, and a total of four carrying sliding blocks 4 are arranged.
Further, the four sliding blocks 4 are connected to the circular ring 3 through 8 inner hexagon screws (third screws 17) and used for bearing positioning rails of the sliding blocks 4, the diameter of the third screws 17 is 2 mm, the length of the screws is 12 mm, external threads with the depth of 2 mm are formed in the lower portions of the screws, the rest 10 mm is a smooth rail, the thickness of screw nuts is 1 mm, and the screws are used as fixed connecting pieces for bearing the sliding blocks.
Furthermore, the disc 1 and the circular ring 3 form a hollowed-out frame structure in a concentric shaft arrangement mode, so that buoyancy can be further reduced.
The following provides a cleaning process of the graphite tray by combining the carrier:
s1, an acid preparation link: preparing acid, namely preparing a container with a cover, selecting according to the size of a graphite tray carrier, and mixing hydrochloric acid and nitric acid in a ratio of 3:1;
s2, acid soaking step: immersing a graphite tray carrier with the graphite tray in acid, and adding mixed acid in a specified time to increase the chemical property of the mixed solution;
s3, cleaning: taking down the soaked graphite disc by using a barrel, and repeatedly flushing with ultrapure water for 30 times;
s4, overflow link: the washed graphite disc leans against the inside of the barrel at 45 degrees, an overflow pipe is arranged in the barrel, and the graphite disc overflows for 12 hours at the water speed of 200 ml/min;
s5, a purging step, namely cleaning the overflowed graphite disc with pure water for 3 times, and then drying the moisture on the surface of the graphite disc with P-level N2;
s6, baking: placing the graphite plate subjected to nitrogen blow-drying into an oven with the temperature set to 150 ℃ for baking for 4 hours, and then placing into an oven with the temperature set to 80 ℃ for baking for 8 hours;
s7, vacuum standby link: taking out the graphite disc, putting the graphite disc into a P-level nitrogen cabinet for cooling, and then vacuum packaging for standby.
It should be noted that the mixing ratio, time, etc. mentioned in the above washing method are the best parameter values obtained by experiments, and are not routine choices for those skilled in the art.
The foregoing detailed description of the invention is provided for illustration, and it is not to be construed that the detailed description of the invention is limited to only those illustration, but that several simple deductions and substitutions can be made by those skilled in the art without departing from the spirit of the invention, and are to be considered as falling within the scope of the invention.
Claims (10)
1. A method of manufacturing an acid-soaking carrier for compatibly carrying a multi-sized graphite tray, the method comprising:
the acid soaking carrier is designed into an upper hollow structure and a lower hollow structure, wherein the upper layer is a first bearing mechanism, the lower layer is a second bearing mechanism, the second bearing mechanism is used for bearing a graphite tray, and the first bearing mechanism forms a peripheral support of a clamp and is connected with the second bearing mechanism;
and a positioning sliding mechanism is arranged at the connecting part of the second bearing mechanism and the graphite tray, and the positioning sliding mechanism drives the graphite tray to move along the radial direction of the center of the second bearing mechanism.
2. The method of claim 1, wherein the first carrier comprises a hollow disk and a first support column supporting the disk; the second bearing mechanism comprises a circular ring, the positioning sliding mechanism comprises a plurality of sliding blocks arranged on the circular ring and used for bearing the graphite tray, and sliding grooves enabling the sliding blocks to move along the radial direction of the circular ring are formed in the sliding blocks.
3. The method of claim 2, wherein the disc is concentric with the annular ring.
4. A method of manufacturing an acid soaking carrier according to claim 2, characterized in that the disc is provided with a plurality of first circular holes and/or annular grooves for reducing buoyancy.
5. The method of claim 4, wherein the first circular holes are symmetrically arranged on both sides of the circular plate, and the annular grooves are symmetrically arranged on both sides of the first circular holes.
6. The method of claim 2, wherein the disc is threaded with the top end of the first support column, the top end of the second support column is threaded with the disc, and the bottom end of the second support column is threaded with the ring.
7. The method for manufacturing an acid soaking carrier according to claim 2, wherein the sliding block is L-shaped and comprises a bearing part and a clamping part, two sliding grooves are formed in the part, close to the circular ring, of the bearing part, and screws for positioning the sliding grooves are arranged on the circular ring.
8. The method of claim 7, wherein the load bearing member and the retaining member are rectangular.
9. The method for manufacturing the acid soaking carrier according to claim 2, wherein the diameter of the disc is 300 mm, the thickness of the disc is 3 mm, the inner radius of the circular ring is 100 mm, the outer radius of the circular ring is 110 mm, and the thickness of the circular ring is 2 mm.
10. The method of claim 2, wherein the first support post has a length of 400 mm and the second support post has a length of 200 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310998863.1A CN117019742A (en) | 2023-08-09 | 2023-08-09 | Manufacturing method of acid soaking carrier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310998863.1A CN117019742A (en) | 2023-08-09 | 2023-08-09 | Manufacturing method of acid soaking carrier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117019742A true CN117019742A (en) | 2023-11-10 |
Family
ID=88631198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310998863.1A Pending CN117019742A (en) | 2023-08-09 | 2023-08-09 | Manufacturing method of acid soaking carrier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117019742A (en) |
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2023
- 2023-08-09 CN CN202310998863.1A patent/CN117019742A/en active Pending
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