CN117012541B - Controllable stripping preparation method of high-density flexible micro-nano coil - Google Patents

Controllable stripping preparation method of high-density flexible micro-nano coil Download PDF

Info

Publication number
CN117012541B
CN117012541B CN202311264390.9A CN202311264390A CN117012541B CN 117012541 B CN117012541 B CN 117012541B CN 202311264390 A CN202311264390 A CN 202311264390A CN 117012541 B CN117012541 B CN 117012541B
Authority
CN
China
Prior art keywords
layer
coil
silicon substrate
micro
nano
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202311264390.9A
Other languages
Chinese (zh)
Other versions
CN117012541A (en
Inventor
侯晓娟
何剑
刘建军
耿文平
丑修建
胡东旭
穆继亮
张乐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
North University of China
Original Assignee
North University of China
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by North University of China filed Critical North University of China
Priority to CN202311264390.9A priority Critical patent/CN117012541B/en
Publication of CN117012541A publication Critical patent/CN117012541A/en
Application granted granted Critical
Publication of CN117012541B publication Critical patent/CN117012541B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01F41/041Printed circuit coils
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01F41/12Insulating of windings
    • H01F41/127Encapsulating or impregnating

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)

Abstract

The invention belongs to the technical field of inductors and coils, and particularly relates to a controllable stripping preparation method of a high-density flexible micro-nano coil, which solves the technical problems in the background art and comprises the steps of preparing a rigid silicon substrate, sticking a polyimide adhesive tape on the upper surface, manufacturing a single-layer MEMS micro-nano coil on the polyimide adhesive tape, and then spin-coating a photosensitive polyimide film; repeatedly manufacturing a coil and spin-coating a photosensitive polyimide film until the total layer number of the coil reaches the requirement; finally spin coating a photosensitive polyimide film serving as a stress insulating layer on the topmost layer for packaging; and (3) soaking the whole finished product in an acetone solution, and peeling the whole multi-layer micro-nano coil from the rigid silicon substrate after a certain time to obtain the flexible micro-nano coil. The polyurethane adhesive on the lower surface of the polyimide adhesive tape reacts with the organic solvent acetone, so that the adhesive force of the adhesive tape is reduced, the tensile stress of the stress insulating layer drives the film layer structure to generate a cleavage opening to promote controllable stripping, and finally the effect of controllable stripping is achieved.

Description

Controllable stripping preparation method of high-density flexible micro-nano coil
Technical Field
The invention relates to the technical field of inductors and coils, in particular to a controllable stripping preparation method of a high-density flexible micro-nano coil.
Background
With the continuous development of the microelectronics field, the flexible micro-nano device is widely focused on the excellent electrical performance and the simple and low-cost manufacturing process, and the combination of the MEMS micro-nano coil manufacturing technology, the micro-energy acquisition technology and a plurality of wearable flexible devices has an increasingly wide application prospect.
The flexible micro-nano coil can greatly improve the power density of the device, reduce the volume and be easy to integrate. However, since the MEMS micro-nano coil is consistently prepared on a rigid silicon substrate, the MEMS micro-nano coil has the defects of large volume when the number of turns of the coil is high, being unfavorable for use under the condition of limited space and conformal assembly in a complex-shape structure, and being unable to be peeled from the rigid silicon substrate in a flexible electronic device, thereby greatly limiting the application; or the MEMS micro-nano coil is directly manufactured on the flexible substrate, and the defect is that the MEMS micro-nano coil is easy to bend and polycondensate in the manufacturing process, so that the MEMS micro-nano coil is damaged. Therefore, the realization of the complete controllable stripping of the MEMS micro-nano coil is still a problem to be solved at present, so that the development of a simple and feasible high-density controllable stripping method of the micro-nano coil is critical to the high-performance output of MEMS electromagnetic micro-energy acquisition devices and a plurality of wearable flexible devices, and has important significance for the development of the Internet of things and flexible electronics.
At present, the methods for realizing the controllable stripping of the MEMS micro-nano coil are as follows. One is to realize the effective separation of the film and the silicon substrate by a laser irradiation method; the other is to completely separate the film from the silicon substrate by chemical etching and transfer it successfully to the flexible base. However, laser lift-off has the disadvantages of complicated operation, high temperature generated during laser irradiation, so that the laser may damage the film during irradiation, and high cost, which is not widely used. The other chemical corrosion method has the defects that the structure of the micro-nano coil can be damaged to a certain extent and the performance output of the micro-nano coil film can be influenced by the process of multiple ultraviolet lithography and wet corrosion, so that the exertion of the power generation performance of the micro-nano coil can be limited.
Disclosure of Invention
The invention provides a controllable stripping preparation method of a high-density flexible micro-nano coil, which aims to overcome the technical defects of incomplete stripping and the like in the conventional controllable stripping preparation method of the MEMS micro-nano coil.
The invention provides a controllable stripping preparation method of a high-density flexible micro-nano coil, which comprises the following steps,
preparing a rigid silicon substrate and cleaning the rigid silicon substrate;
step two, sticking a polyimide adhesive tape on the upper surface of the rigid silicon substrate in the step one, wherein the polyimide adhesive tape adopts polyurethane adhesive, and then cleaning the surface of the polyimide adhesive tape;
step three, manufacturing a single-layer MEMS micro-nano coil on a polyimide tape on the top of a rigid silicon substrate, then spin-coating a photosensitive polyimide film, and photoetching through holes corresponding to two electrodes of the MEMS micro-nano coil on the photosensitive polyimide film;
step four, repeating the step three until the total layer number of the MEMS micro-nano coil reaches the design requirement;
step five, finally spin coating a photosensitive polyimide film serving as a stress insulating layer on the topmost layer for packaging, and photoetching through holes corresponding to two electrodes of the MEMS micro-nano coil on the stress insulating layer;
and step six, soaking the whole finished product obtained in the step five in an acetone solution, and peeling off the whole multi-layer MEMS micro-nano coil from the junction of the polyimide adhesive tape and the rigid silicon substrate after a certain time to obtain the flexible micro-nano coil.
The cleaning process is to provide a flat surface for subsequent processing, spin-coating a polymer polyimide, which is a macromolecule composed of repeating structural units, onto the device to be stripped, the subunits being linked by covalent chemical bonds. The polyurethane adhesive on the polyimide adhesive tape is a formate, is a macromolecular compound with a main chain containing repeated carbamate groups, and is formed by polyaddition of organic diisocyanate or polyisocyanate and dihydroxy or polyhydroxy compounds. From the molecular structure, the-O-linked groups are polar, and acetone is also a polar molecule, which is soluble in acetone by the "near miscibility" principle. Acetone is a commonly used solvent that is capable of dissolving polyurethanes of pure linear molecular structure. Polyurethane is a macromolecular compound having repeating urethane groups in the main chain. In addition, acetone can also form a liquid interface layer on the surface of the polyimide adhesive tape to separate the adhesive part on the surface of the adhesive tape from the base material, so that the convenience of separating the adhesive tape is improved. The tensile stress drives the film layer structure to generate a cleavage fracture and propagate along a designated interface, so that the complete and high-quality stripping of the flexible coil can be realized. The polymer photosensitive polyimide film is not only a stress layer, but also has the packaging function to protect the double-layer coil and even the multi-layer coil. The main function of the photosensitive polyimide film of the top layer is to improve the corrosion resistance and mechanical properties of the part. By the controllable stripping preparation method of the flexible micro-nano coil, the quality and the integrity of the flexible micro-nano coil are greatly improved.
Preferably, in the first step and the second step, the cleaning treatment is performed by using deionized water and nitrogen.
Preferably, in the second step, the rigid silicon substrate is placed on a workbench of a film sticking machine, the rigid silicon substrate is heated to 80 ℃ by utilizing the heating function of the film sticking machine, water vapor is removed, a vacuum valve of the workbench of the film sticking machine is opened, vacuumizing adsorption is carried out, the rigid silicon substrate is adsorbed on the workbench of the film sticking machine, and then the polyimide adhesive tape is stuck on the rigid silicon substrate. The water vapor is removed, bubbling generated under the polyimide adhesive tape during subsequent film pasting can be effectively prevented, the rigid silicon substrate is adsorbed onto a working table of a film pasting machine through vacuumizing, the rigid silicon substrate is prevented from moving, and therefore no bubble is generated in the film pasting process and the surface is smooth.
Preferably, in the third step, before the single-layer MEMS micro-nano coil is manufactured, an adhesion layer and a seed layer are sputtered on the surface of the polyimide adhesive tape, the thickness ratio of the adhesion layer to the seed layer is 1:5 or 1:10, and the adhesion layer and the seed layer are integrally used as the conductive layer. The adhesion layer and the conductive layer may be a chromium layer and a copper layer, a chromium layer and a gold layer, or a titanium layer and a copper layer, respectively.
Preferably, the sub-steps of manufacturing the single-layer MEMS micro-nano coil are as follows:
s1, placing a rigid silicon substrate provided with a conductive layer on a workbench of a photoresist homogenizing machine, spin-coating photoresist, performing photoetching exposure patterning treatment by using a photoetching machine after the photoresist reaches a set thickness, performing treatment by using a developing solution, removing residual photoresist by using a plasma photoresist remover, and finally performing hardening treatment on a high-temperature baking table to complete preparation of a first layer of coil template;
s2, dipping an acetone solution, uniformly wiping ten electrode interfaces on the circumferential direction of the rigid silicon substrate, connecting a power supply clamp at the position of one group of opposite electrode interfaces to carry out electroplating treatment on the first layer of coil template, exchanging the first layer of coil template to the next group of opposite electrode interfaces after a certain time, and connecting the ten electrode interfaces in turn until the whole single-layer coil is prepared.
Compared with the prior art, the technical scheme provided by the invention has the following advantages: the invention provides a simple, efficient and economical method for controllably stripping a flexible micro-nano coil, when a polyimide tape, namely an industrial polyimide film, is stuck on a silicon wafer to serve as a substrate, the silicon wafer is taken as a hard substrate, the polyimide film serves as a controllably stripping flexible substrate film, and meanwhile, a micro-nano coil device is manufactured on the side; compared with the traditional electroplating coating, the photosensitive polyimide film has smaller stress as a stress layer, is not easy to cause part deformation or damage to devices, and is particularly important for the flexible coil micro-nano technology; meanwhile, uniformity of the coating is realized by adjusting process parameters, consistency of thickness of the coating and stability of protection performance are ensured, and service life of the part can be further ensured; polyimide polymers with different thicknesses are spin-coated at the top of a device to serve as stress layers, tensile stress drives a film layer structure to generate cleavage cracks to promote controllable stripping, the whole device is placed in an acetone solution after the stress layers are solidified, high polymers of polyurethane adhesive (polyisocyanate and polyol ether) on the lower surface of a polyimide adhesive tape are easy to react with organic solvent acetone (ketone substances), so that interaction force between the polyimide adhesive tape and a silicon wafer is reduced, adhesive force of the adhesive tape is reduced, and finally the whole nanometer flexible coil device is separated from a silicon substrate, and the effect of controllable stripping is achieved.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the description of the embodiments or the prior art will be briefly described below, and it will be obvious to those skilled in the art that other drawings can be obtained from these drawings without inventive effort.
FIG. 1 is a flow chart of a method for preparing a controllable stripping of a high-density flexible micro-nano coil according to the invention;
FIG. 2 is a schematic view of a rigid silicon substrate according to the present invention;
FIG. 3 is a schematic view of a structure of the rigid silicon substrate of the present invention after polyimide tape is added thereto;
FIG. 4 is a schematic diagram of the structure of the first MEMS micro-nano coil added to the structure of FIG. 3;
FIG. 5 is a schematic view of the structure of FIG. 4 with an intermediate insulating layer added;
FIG. 6 is a schematic diagram of the structure of the second layer MEMS micro-nano coil added on the basis of FIG. 5;
FIG. 7 is a schematic view of the structure of FIG. 6 after adding a stress insulating layer;
FIG. 8 is a schematic diagram of the peeling of the multilayer MEMS micronano-coil as a whole from a rigid silicon substrate;
FIG. 9 is a schematic representation of the final stripped product of the process of the present invention;
fig. 10 is an open circuit voltage output graph of different sized flexible micro-nano coils with controlled stripping in an embodiment of the invention.
In the figure: 1. a rigid silicon substrate; 2. polyimide tape; 3. a first layer of MEMS micro-nano coils; 4. an intermediate insulating layer; 5. a second layer of MEMS micro-nano coils; 6. and a stress insulating layer.
Detailed Description
In order that the above objects, features and advantages of the invention will be more clearly understood, a further description of the invention will be made. It should be noted that, without conflict, the embodiments of the present invention and features in the embodiments may be combined with each other.
In the description, it should be noted that the terms "first," "second," and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. It should be noted that, unless explicitly stated or limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms described above will be understood by those of ordinary skill in the art as the case may be.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced otherwise than as described herein; it will be apparent that the embodiments in the specification are only some, but not all, embodiments of the invention.
Specific embodiments of the present invention will be described in detail below with reference to fig. 1 to 10.
In one embodiment, as shown in fig. 1, a method for preparing a controlled peel of a high-density flexible micro-nano coil, comprises the following steps,
firstly, preparing a rigid silicon substrate 1 and cleaning the rigid silicon substrate 1 by deionized water and nitrogen, wherein in the specific embodiment, the rigid silicon substrate 1 is of a circular sheet structure;
step two, sticking a polyimide tape 2 on the upper surface of the rigid silicon substrate 1 in the step one at room temperature (20 ℃) of a process room, wherein the rigid silicon substrate 1 after sticking the polyimide tape 2 is used as a substrate for manufacturing a flexible micro-nano coil, the rigid silicon substrate 1 provides a flat plane for the subsequent process, the polyimide tape 2 adopts polyurethane adhesive, the rigid silicon substrate 1 is placed on a workbench of a film sticking machine, the rigid silicon substrate 1 is heated to 80 ℃ by utilizing the heating function of the film sticking machine, water vapor is removed, the bottom bubbling of the polyimide tape 2 is prevented when the subsequent polyimide tape 2 is stuck, the subsequent process operation is influenced, a vacuum valve of the workbench of the film sticking machine is opened, vacuumizing adsorption is carried out, the rigid silicon substrate 1 is adsorbed on the workbench of the film sticking machine, the rigid silicon substrate 1 is prevented from moving in the process of sticking the polyimide tape 2, no bubbling and flat surface in the process of sticking the polyimide tape 2 are ensured, and the polyimide tape 2 is stuck on the rigid silicon substrate 1; then the surface of the polyimide tape 2 is cleaned by deionized water and nitrogen;
step three, before manufacturing the single-layer MEMS micro-nano coil, sputtering an adhesion layer and a seed layer on the surface of the polyimide tape 2, wherein the thickness ratio of the adhesion layer to the seed layer is 1:5 or 1:10, the adhesion layer and the seed layer are integrally used as a conductive layer to prepare for subsequent electroplating work, the adhesion layer and the conductive layer can be a chromium layer and a copper layer, a chromium layer and a gold layer or a titanium layer and a copper layer respectively, and in a specific embodiment, the thickness of the sputtered chromium layer is 20nm, and the thickness of the copper layer is 100nm; a single-layer MEMS micro-nano coil is manufactured on a polyimide tape 2 on the top of a rigid silicon substrate 1, then a photosensitive polyimide film is spin-coated, and through holes corresponding to two electrodes of the MEMS micro-nano coil are photoetched on the photosensitive polyimide film; the sub-steps for manufacturing the single-layer MEMS micro-nano coil are as follows:
s1, placing a rigid silicon substrate 1 provided with a conductive layer on a workbench of a spin coater, spin-coating photoresist with the model AZ4620, spin-coating the photoresist at 1000r/min, pre-drying for 150S at a 100 ℃ drying table, and re-spin-coating the photoresist for a second time after 50min of intermediate interval, wherein the thickness of the photoresist reaches about 15um, and pre-drying for 150S at the 100 ℃ drying table; setting relevant parameters by a photoetching machine with the model of EVG610 to carry out photoetching operation, setting the thickness of the whole rigid silicon substrate 1 and attachments on the rigid silicon substrate to be 620um, carrying out photoetching exposure patterning treatment on the rigid silicon substrate 1 and attachments on the rigid silicon substrate, wherein the thickness of the photoresist is 15um, then carrying out photoetching exposure patterning treatment on the rigid silicon substrate by using a developing solution with the model of AZ400K in a 1:3 configuration, developing for about 55 seconds, removing residual photoresist by using a plasma photoresist remover, setting parameters of the plasma photoresist remover to be O2-300W-2min, and finally hardening on a high-temperature baking table at 120 ℃ for 15min, wherein the preparation of a first layer of coil template is completed;
s2, processing the first layer of micro-nano coil by an electroplating process through the first layer of coil template manufactured in the step three, wherein the specific operation is as follows: dipping an acetone solution in the acetone solution by using a dust-free rod, uniformly wiping ten electrode interfaces in the circumferential direction of the rigid silicon substrate 1, and connecting a power supply clamp at the opposite electrode interfaces to carry out electroplating treatment on the first layer of coil template, wherein the power supply clamp is a direct current power supply clamp or an alternating current power supply clamp; after a certain time, the plating layer is exchanged to the next group of opposite electrode interfaces, so that the thickness of the whole plating layer is consistent, the current intensity is calculated and set to be 0.1A according to the plating area and the concentration of the plating solution, each electrode is plated for 1min and 10min respectively, and the first layer MEMS micro-nano coil 3 with the thickness of 10um is prepared after ten electrode interfaces are connected in turn;
step four, repeating the step three until the total layer number of the MEMS micro-nano coil reaches the design requirement; sputtering, photoresist coating, alignment exposure, development and electroplating are sequentially carried out; in the embodiment, a double-layer coil is arranged, namely the double-layer coil comprises a first layer MEMS micro-nano coil 3 and a second layer MEMS micro-nano coil 5; a photosensitive polyimide film disposed between the multilayer coils as an intermediate insulating layer 4;
step five, finally spin coating a photosensitive polyimide film serving as a stress insulating layer 6 on the topmost layer for packaging, adjusting the thickness of the stress insulating layer 6 to control the stress of the stress insulating layer, then performing pre-baking hardening treatment at 120 ℃ on the photosensitive polyimide film, setting related parameters by using an EVG610 photoetching machine, setting a double-layer coil to be 620um in overall thickness, performing photoetching exposure patterning treatment on the photosensitive polyimide film with 15um in thickness, developing for about 100 seconds by using diluted AZ400K developing solution, and photoetching through holes corresponding to two electrodes of the MEMS micro-nano coil on the stress insulating layer 6; exposing the metal electrode of the flexible coil, and finally curing the photosensitive polyimide film for subsequent connection and conduction;
step six, soaking the whole finished product obtained in the step five in acetone solution, and after 48 hours, enabling acetone to react with high polymer polyurethane adhesive under the polyimide adhesive tape 2, so that the adhesiveness between a high-density coil device and a silicon wafer is reduced, and further, driving a device film layer structure to generate cracks by tensile stress of the stress insulating layer 6 which is spin-coated on the topmost layer, spreading along the interface between the polyimide adhesive tape 2 and the rigid silicon substrate 1, attaching a layer of flexible handle (such as adhesive tape) on the surface of the stress insulating layer 6, and forming cracks at the abrupt edges of the polyimide adhesive tape 2 as long as a small force is applied to the handle layer, so that the whole multi-layer MEMS micro-nano coil is successfully peeled from the junction between the polyimide adhesive tape 2 and the rigid silicon substrate 1, and thus the flexible micro-nano coil is obtained.
In this example, a flexible micro-nano coil film was prepared by the method of the present invention, the resistance of the film was tested in a state of no bending, the resistance value of a square coil with a side length of 1 cm was about 60 Ω, the resistance value of a square coil with a side length of 1.5 cm was about 100 Ω, the resistance value of a square coil with a side length of 2 cm was about 200 Ω, and at the same time, an electromagnetic induction phenomenon occurred on an excitation bench with a frequency of about 7Hz, the magnetic flux through the coil was changed, the coil was placed on the side, and the distance of N52 magnet was 2 mm, and the open circuit voltage outputs of the three different side lengths were measured to be about 40mv, about 80mv, and about 120mv, respectively. Therefore, the flexible micro-nano coil controllably peeled by the method has good output performance.
The foregoing is only a specific embodiment of the invention to enable those skilled in the art to understand or practice the invention. Although described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the embodiments, and they should be construed as covering the scope of the appended claims.

Claims (6)

1. A controllable stripping preparation method of a high-density flexible micro-nano coil is characterized by comprising the following steps,
step one, preparing a rigid silicon substrate (1) and cleaning the rigid silicon substrate (1);
step two, polyimide tape is stuck on the upper surface of the rigid silicon substrate (1) in the step one
(2) The polyimide adhesive tape (2) adopts polyurethane adhesive, and then the surface of the polyimide adhesive tape (2) is cleaned;
step three, manufacturing a single-layer MEMS micro-nano coil on a polyimide tape (2) on the top of a rigid silicon substrate (1), then spin-coating a photosensitive polyimide film, and photoetching through holes corresponding to two electrodes of the MEMS micro-nano coil on the photosensitive polyimide film;
step four, repeating the step three until the total layer number of the MEMS micro-nano coil reaches the design requirement;
step five, finally spin coating a photosensitive polyimide film serving as a stress insulating layer (6) on the topmost layer for packaging, and photoetching through holes corresponding to two electrodes of the MEMS micro-nano coil on the stress insulating layer (6);
and step six, soaking the whole finished product obtained in the step five in an acetone solution, and peeling off the whole multi-layer MEMS micro-nano coil from the junction of the polyimide adhesive tape (2) and the rigid silicon substrate (1) after a certain time to obtain the flexible micro-nano coil.
2. The method for preparing the controllable stripping of the high-density flexible micro-nano coil according to claim 1, wherein in the first step and the second step, the cleaning treatment is performed by using deionized water and nitrogen.
3. The controllable stripping preparation method of the high-density flexible micro-nano coil is characterized in that in the second step, a rigid silicon substrate (1) is placed on a workbench of a film sticking machine, the rigid silicon substrate (1) is heated to 80 ℃ by utilizing the heating function of the film sticking machine, water vapor is removed, a vacuum valve of the workbench of the film sticking machine is opened, vacuumizing adsorption is carried out, the rigid silicon substrate (1) is adsorbed on the workbench of the film sticking machine, and then a polyimide adhesive tape (2) is stuck on the rigid silicon substrate (1).
4. The controllable stripping preparation method of the high-density flexible micro-nano coil is characterized in that in the third step, before the single-layer MEMS micro-nano coil is manufactured, an adhesion layer and a seed layer are sputtered on the surface of a polyimide adhesive tape (2), the thickness ratio of the adhesion layer to the seed layer is 1:5 or 1:10, and the whole adhesion layer and the seed layer are used as conducting layers.
5. The method for preparing the controllable stripping of the high-density flexible micro-nano coil according to claim 3, wherein in the third step, the sub-steps for preparing the single-layer MEMS micro-nano coil are as follows:
s1, placing a rigid silicon substrate (1) provided with a conductive layer on a workbench of a photoresist homogenizing machine, spin-coating photoresist, performing photoetching exposure patterning treatment by using a photoresist machine after the photoresist reaches a set thickness, performing treatment by using a developing solution, removing residual photoresist by using a plasma photoresist remover, and finally performing hardening treatment on a high-temperature baking table to complete preparation of a first layer of coil template;
s2, dipping an acetone solution, uniformly wiping ten electrode interfaces on the circumferential direction of the rigid silicon substrate (1), connecting a power supply clamp at the position of one group of opposite electrode interfaces to carry out electroplating treatment on the first layer of coil template, switching to the next group of opposite electrode interfaces after a certain time, and connecting the ten electrode interfaces in turn until the whole single-layer coil is prepared.
6. The method for preparing the controllable stripping of the high-density flexible micro-nano coil according to claim 5, wherein the power clamp is a direct-current power clamp or an alternating-current power clamp.
CN202311264390.9A 2023-09-28 2023-09-28 Controllable stripping preparation method of high-density flexible micro-nano coil Active CN117012541B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202311264390.9A CN117012541B (en) 2023-09-28 2023-09-28 Controllable stripping preparation method of high-density flexible micro-nano coil

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202311264390.9A CN117012541B (en) 2023-09-28 2023-09-28 Controllable stripping preparation method of high-density flexible micro-nano coil

Publications (2)

Publication Number Publication Date
CN117012541A CN117012541A (en) 2023-11-07
CN117012541B true CN117012541B (en) 2023-12-15

Family

ID=88572980

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202311264390.9A Active CN117012541B (en) 2023-09-28 2023-09-28 Controllable stripping preparation method of high-density flexible micro-nano coil

Country Status (1)

Country Link
CN (1) CN117012541B (en)

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002057033A (en) * 2000-08-10 2002-02-22 Tdk Corp Coil part and its manufacturing method
JP2003078230A (en) * 2001-09-06 2003-03-14 Toray Ind Inc Method of manufacturing circuit board
US6555286B1 (en) * 1999-08-25 2003-04-29 Kansai Paint Co., Ltd. Positive type actinic-ray-curable dry film and pattern-forming method by use of the same
US6943124B1 (en) * 2002-07-17 2005-09-13 Taiwan Semiconductor Manufacturing Company Two step exposure to strengthen structure of polyimide or negative tone photosensitive material
JP2008076956A (en) * 2006-09-25 2008-04-03 Dainippon Printing Co Ltd Method for forming polyimide pattern, article and suspension for hard disk
JP2012052037A (en) * 2010-09-01 2012-03-15 Nitto Denko Corp Viscoelastic body and method for producing the same
CN106298180A (en) * 2016-08-17 2017-01-04 上海交通大学 The graphical planar magnetic core double layer planar micro-inductance of helical structure thin film and preparation method
CN108668431A (en) * 2017-03-28 2018-10-16 国家纳米科学中心 The preparation method and purposes of flexible extensible conducting wire and circuit
WO2019027204A1 (en) * 2017-07-31 2019-02-07 주식회사 케이비켐 Actuator coil structure and method for manufacturing same
CN111333022A (en) * 2020-03-17 2020-06-26 中北大学 High-density micro-nano coil flexible heterogeneous integration method
CN113808921A (en) * 2021-07-26 2021-12-17 天津大学 Manufacturing method of flexible electronic device with characteristic dimension in submicron order

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6555286B1 (en) * 1999-08-25 2003-04-29 Kansai Paint Co., Ltd. Positive type actinic-ray-curable dry film and pattern-forming method by use of the same
JP2002057033A (en) * 2000-08-10 2002-02-22 Tdk Corp Coil part and its manufacturing method
JP2003078230A (en) * 2001-09-06 2003-03-14 Toray Ind Inc Method of manufacturing circuit board
US6943124B1 (en) * 2002-07-17 2005-09-13 Taiwan Semiconductor Manufacturing Company Two step exposure to strengthen structure of polyimide or negative tone photosensitive material
JP2008076956A (en) * 2006-09-25 2008-04-03 Dainippon Printing Co Ltd Method for forming polyimide pattern, article and suspension for hard disk
JP2012052037A (en) * 2010-09-01 2012-03-15 Nitto Denko Corp Viscoelastic body and method for producing the same
CN106298180A (en) * 2016-08-17 2017-01-04 上海交通大学 The graphical planar magnetic core double layer planar micro-inductance of helical structure thin film and preparation method
CN108668431A (en) * 2017-03-28 2018-10-16 国家纳米科学中心 The preparation method and purposes of flexible extensible conducting wire and circuit
WO2019027204A1 (en) * 2017-07-31 2019-02-07 주식회사 케이비켐 Actuator coil structure and method for manufacturing same
CN111333022A (en) * 2020-03-17 2020-06-26 中北大学 High-density micro-nano coil flexible heterogeneous integration method
CN113808921A (en) * 2021-07-26 2021-12-17 天津大学 Manufacturing method of flexible electronic device with characteristic dimension in submicron order

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
UV-/moisture-curable silicone-modified poly(urethane–acrylate) adhesive for untreated PET substrate;Ren-Kui Ge,et al;《 Polymer Bulletin 》;3445-3458 *
高密度微线圈柔性异质集成及其在能源采集器中的应用;赵越芳;《中国优秀硕士学位论文全文数据库工程科技II辑》;C042-293 *

Also Published As

Publication number Publication date
CN117012541A (en) 2023-11-07

Similar Documents

Publication Publication Date Title
CN110482482B (en) Preparation method of insulated patterned high-thermal-conductivity diamond heat dissipation device
JP5742725B2 (en) Polyimide film, production method thereof, and laminate production method
TW201521984A (en) Method of manufacturing a buried flexible electrode film using thermal lamination transfer
CN102856213B (en) Thin film multilayer wiring manufacturing method based on LTCC (Low Temperature Co-Fired Ceramic) base plate
TWI760683B (en) Component manufacturing method
JP4096695B2 (en) Flexible film peeling method, peeling device, and circuit board
TWI433616B (en) Circuit board and method for manufacturing the same
KR20150082406A (en) Production method for coil element, coil element assembly, and coil component
CN117012541B (en) Controllable stripping preparation method of high-density flexible micro-nano coil
CN109768154B (en) Preparation method of sapphire-based controllable-peeling flexible PZT thin film
CN114613584A (en) Etching method for soft magnetic material and soft magnetic strip
WO2009088357A1 (en) Method for lift-off patterning films on a substrate
JP2010520623A (en) Manufacturing method of electric circuit on ultra-thin plastic film
KR101476746B1 (en) Method of manufacturing flexible metal substrate, flexible electronic device and flexible metal substrate using a corrosion-resistant mother substrate
JP2002313891A (en) Tray for substrate transport and manufacturing method therefor
CN111430291A (en) Preparation method of flexible device based on thin film substrate
CN115631916A (en) Planar inductor based on stripe type soft magnetic film and preparation method thereof
JP2010205848A (en) Method for manufacturing flat conductive film, method for manufacturing semiconductor device, and semiconductor device
JPS5964245A (en) Electrostatic holder
CN118159117A (en) Ferromagnetic electrode transfer method, spin electronic device, and storage medium
KR101495239B1 (en) Method for manufacturing flexible substrate with buried conducting trace using modification layer and flexible substrate manufactured thereby
JP4090559B2 (en) Multilayer wiring board manufacturing method and transfer vacuum apparatus
CN113013022B (en) Patternable ultrathin hardened photoresist dielectric film
WO2016204207A1 (en) Wiring pattern manufacturing method, transistor manufacturing method, and transfer member
KR20130026008A (en) Flexible metal substrate and flexible electronic device manufacturing method using a mother substrate having a protective layer and flexible metal substrate and flexible electronic device manufactured by the method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant