CN117012541B - Controllable stripping preparation method of high-density flexible micro-nano coil - Google Patents
Controllable stripping preparation method of high-density flexible micro-nano coil Download PDFInfo
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Abstract
本发明属于电感、线圈技术领域,尤其涉及一种高密度柔性微纳线圈的可控剥离制备方法,解决了背景技术中的技术问题,其包括准备刚性硅基底并在上表面粘贴聚酰亚胺胶带,在聚酰亚胺胶带上制作单层MEMS微纳线圈,之后旋涂光敏性聚酰亚胺膜;重复制作线圈以及旋涂光敏性聚酰亚胺膜,直至线圈的总层数达到要求;最终在最顶层旋涂作为应力绝缘层的光敏性聚酰亚胺膜进行封装;将成品整体浸泡于丙酮溶液,一定时间后将多层微纳线圈整体从刚性硅基底上剥离,得到柔性微纳线圈。聚酰亚胺胶带下表面的聚氨酯胶与有机溶剂丙酮发生反应,减少胶带的粘附力,应力绝缘层的张应力驱动膜层结构产生劈裂断口促进可控剥离,最终达到可控剥离的效果。
The invention belongs to the technical field of inductors and coils, and in particular relates to a controllable peeling preparation method of high-density flexible micro-nano coils, which solves the technical problems in the background technology. It includes preparing a rigid silicon substrate and pasting polyimide on the upper surface. Tape, make a single-layer MEMS micro-nano coil on the polyimide tape, and then spin-coat the photosensitive polyimide film; repeat making the coil and spin-coating the photosensitive polyimide film until the total number of coil layers reaches the requirement ; Finally, a photosensitive polyimide film as a stress insulation layer is spin-coated on the top layer for encapsulation; the entire finished product is soaked in an acetone solution, and after a certain period of time, the entire multi-layer micro-nano coil is peeled off from the rigid silicon substrate to obtain a flexible micro-nano coil. nanocoil. The polyurethane glue on the lower surface of the polyimide tape reacts with the organic solvent acetone to reduce the adhesive force of the tape. The tensile stress of the stress insulation layer drives the film layer structure to produce split fractures to promote controlled peeling, and finally achieves the effect of controlled peeling. .
Description
技术领域Technical field
本发明涉及电感、线圈技术领域,尤其涉及一种高密度柔性微纳线圈的可控剥离制备方法。The invention relates to the technical fields of inductors and coils, and in particular to a controllable peeling preparation method of high-density flexible micro-nano coils.
背景技术Background technique
随着微电子领域的不断发展,柔性微纳器件因其优异的电学性能和简单、成本低廉的制作工艺得到广泛关注,MEMS微纳线圈制作技术与微能源采集技术及许多可穿戴柔性器件的结合有着越来越广泛的应用前景。With the continuous development of the field of microelectronics, flexible micro-nano devices have received widespread attention due to their excellent electrical properties and simple and low-cost manufacturing processes. The combination of MEMS micro-nano coil manufacturing technology and micro-energy harvesting technology and many wearable flexible devices It has more and more extensive application prospects.
柔性微纳线圈可极大提升器件的功率密度,缩小体积并易于集成。但由于MEMS微纳线圈一贯是在刚性硅基底上进行制备的,其缺陷是当线圈匝数较高时,体积庞大,不利于在空间受限的情况下使用以及复杂外形结构中的共形装配,其在柔性电子器件中,无法从刚性硅基底上剥离,极大限制了应用;又或者直接将MEMS微纳线圈在柔性基底上进行制作,其缺陷是在制作过程中容易发生弯曲以及缩聚现象,导致MEMS微纳线圈损坏。因此MEMS微纳线圈实现完整可控剥离仍是目前亟待解决的问题,所以,开发一种简单、可行的高密度微纳线圈可控剥离方法,对于MEMS电磁式微能源采集器件以及许多可穿戴柔性器件的高性能输出至关重要,对物联网和柔性电子的发展具有重要意义。Flexible micro-nano coils can greatly increase the power density of devices, reduce size and facilitate integration. However, since MEMS micro-nano coils are always prepared on rigid silicon substrates, the disadvantage is that when the number of coil turns is high, they are bulky, which is not conducive to use in limited space and conformal assembly in complex structures. , in flexible electronic devices, it cannot be peeled off from the rigid silicon substrate, which greatly limits its application; or MEMS micro-nano coils are directly produced on the flexible substrate. The disadvantage is that bending and condensation phenomena occur easily during the production process. , causing damage to the MEMS micro-nano coil. Therefore, the complete controllable peeling of MEMS micro-nano coils is still an urgent problem to be solved. Therefore, developing a simple and feasible high-density micro-nano coil controllable peeling method is suitable for MEMS electromagnetic micro-energy harvesting devices and many wearable flexible devices. The high-performance output is crucial and is of great significance to the development of the Internet of Things and flexible electronics.
目前,实现MEMS微纳线圈可控剥离的方法有以下两种。一种是通过激光照射的方法将薄膜与硅基底实现有效分离;另一种是通过化学腐蚀的方法将薄膜与硅衬底完全分离,并将其成功转移到柔性基底。但是激光剥离的缺点是操作复杂,激光照射过程中产生很高的温度,以至于激光在照射过程中可能会损坏薄膜,并且这种方法成本较高,得不到广泛应用。另一种化学腐蚀方法的缺点是需要经过多次紫外光刻和湿法腐蚀的工艺,在一定程度上会破坏微纳线圈的结构以及影响微纳线圈薄膜的性能输出,进而会限制微纳线圈发电性能的发挥。Currently, there are two methods to achieve controllable peeling of MEMS micro-nano coils. One is to effectively separate the film from the silicon substrate through laser irradiation; the other is to completely separate the film from the silicon substrate through chemical etching and successfully transfer it to a flexible substrate. However, the disadvantages of laser peeling are that the operation is complicated and the temperature generated during laser irradiation is so high that the laser may damage the film during irradiation. Moreover, this method is costly and cannot be widely used. The disadvantage of another chemical etching method is that it requires multiple UV lithography and wet etching processes, which to a certain extent will destroy the structure of the micro-nano coil and affect the performance output of the micro-nano coil film, thereby limiting the micro-nano coil The performance of power generation.
发明内容Contents of the invention
为克服现有MEMS微纳线圈的可控剥离制备方法均存在剥离不完整等难剥离的技术缺陷,本发明提供了一种高密度柔性微纳线圈的可控剥离制备方法。In order to overcome the technical defects of difficult peeling such as incomplete peeling in existing controllable peeling preparation methods of MEMS micro-nano coils, the present invention provides a controllable peeling preparation method of high-density flexible micro-nano coils.
本发明提供了一种高密度柔性微纳线圈的可控剥离制备方法,包括如下步骤,The invention provides a controllable peeling preparation method of high-density flexible micro-nano coils, which includes the following steps:
步骤一、准备刚性硅基底并对刚性硅基底进行清洁处理;Step 1: Prepare a rigid silicon substrate and clean the rigid silicon substrate;
步骤二、在步骤一中的刚性硅基底上表面粘贴聚酰亚胺胶带,聚酰亚胺胶带采用聚氨酯胶,之后对聚酰亚胺胶带表面进行清洗处理;Step 2: Paste polyimide tape on the upper surface of the rigid silicon substrate in step 1. The polyimide tape uses polyurethane glue, and then clean the surface of the polyimide tape;
步骤三、在刚性硅基底顶部的聚酰亚胺胶带上制作单层MEMS微纳线圈,之后旋涂光敏性聚酰亚胺膜,并且在光敏性聚酰亚胺膜上光刻与MEMS微纳线圈的两个电极对应的通孔;Step 3: Make a single-layer MEMS micro-nano coil on the polyimide tape on top of the rigid silicon substrate, then spin-coat the photosensitive polyimide film, and photolithography and MEMS micro-nano coils on the photosensitive polyimide film The through holes corresponding to the two electrodes of the coil;
步骤四、重复步骤三直至MEMS微纳线圈的总层数达到设计要求;Step 4. Repeat Step 3 until the total number of layers of MEMS micro-nano coils reaches the design requirements;
步骤五、最终在最顶层旋涂作为应力绝缘层的光敏性聚酰亚胺膜进行封装,并且在应力绝缘层上光刻与MEMS微纳线圈的两个电极对应的通孔;Step 5: Finally, spin-coat the photosensitive polyimide film as the stress insulation layer on the top layer for packaging, and photoetch through holes corresponding to the two electrodes of the MEMS micro-nano coil on the stress insulation layer;
步骤六、将步骤五得到的成品整体浸泡于丙酮溶液,一定时间后将多层MEMS微纳线圈整体从聚酰亚胺胶带与刚性硅基底的交界处剥离,得到柔性微纳线圈。Step 6: Soak the entire finished product obtained in Step 5 in the acetone solution. After a certain period of time, peel off the entire multi-layer MEMS micro-nano coil from the interface between the polyimide tape and the rigid silicon substrate to obtain a flexible micro-nano coil.
清洁处理是为了给后续工艺提供平整的平面,在被剥离器件上旋涂聚合物聚酰亚胺,聚酰亚胺是重复结构单元组成的大分子,这些亚基通过共价化学键连接。而聚酰亚胺胶带上的聚氨酯胶是一种甲酸酯,是主链上含有重复氨基甲酸酯基团的大分子化合物,它是由有机二异氰酸酯或多异氰酸酯与二羟基或多羟基化合物加聚而成。从分子结构上看,-O-连接起来的基团都是带极性的,丙酮也是极性分子,通过“相近相溶”原理可以溶于丙酮。丙酮是一种常用的溶剂,它能够溶解纯线型分子结构的聚氨酯。聚氨酯是一种大分子化合物,其主链上含有重复的氨基甲酸酯基团。此外,丙酮还可以在聚酰亚胺胶带表面形成一个液态界面层,将胶带表面粘合部分与基材分离开来,增加了胶带脱离的便利性。利用其张应力驱动膜层结构产生劈裂断口并沿指定界面传播,即可实现柔性线圈的完整和高质量剥离。聚合物光敏聚酰亚胺膜不仅是应力层,还具有封装的作用,以保护双层线圈甚至多层线圈。顶层的光敏聚酰亚胺膜的主要作用是提高零件的耐腐蚀性和机械性能。通过本发明所述的柔性微纳线圈的可控剥离制备方法,柔性微纳线圈的质量和完整性将大幅提升。The cleaning process is to provide a flat surface for subsequent processes, and the polymer polyimide is spin-coated on the stripped device. Polyimide is a macromolecule composed of repeating structural units. These subunits are connected through covalent chemical bonds. The polyurethane glue on the polyimide tape is a kind of formate, which is a macromolecular compound containing repeating urethane groups in the main chain. It is composed of organic diisocyanate or polyisocyanate and dihydroxy or polyhydroxy compounds. Made by addition. From the perspective of molecular structure, the groups connected by -O- are all polar, and acetone is also a polar molecule. It can be dissolved in acetone through the principle of "similarity dissolves". Acetone is a commonly used solvent that dissolves polyurethane with a purely linear molecular structure. Polyurethane is a macromolecular compound containing repeating urethane groups in its backbone. In addition, acetone can also form a liquid interface layer on the surface of the polyimide tape to separate the adhesive part of the tape surface from the base material, increasing the convenience of tape detachment. By using its tensile stress to drive the film layer structure to generate cleavage fractures and propagate along the specified interface, complete and high-quality peeling of the flexible coil can be achieved. The polymer photosensitive polyimide film is not only a stress layer, but also plays an encapsulating role to protect double-layer coils or even multi-layer coils. The main function of the top layer of photosensitive polyimide film is to improve the corrosion resistance and mechanical properties of the parts. Through the controlled peeling preparation method of flexible micro-nano coils according to the present invention, the quality and integrity of flexible micro-nano coils will be greatly improved.
优选的,步骤一和步骤二中,清洁处理均是利用去离子水和氮气进行的。Preferably, in step one and step two, the cleaning treatment is performed using deionized water and nitrogen.
优选的,步骤二中,将刚性硅基底置于贴膜机的工作台上,利用贴膜机的加热功能将刚性硅基底加热至80℃,除去水蒸气,同时打开贴膜机工作台的真空阀,进行抽真空吸附,使刚性硅基底吸附至贴膜机工作台上,再将聚酰亚胺胶带粘贴至刚性硅基底上。除去水蒸气,可有效防止后续贴膜时聚酰亚胺胶带底下产生鼓泡,通过抽真空将刚性硅基底吸附至贴膜机工作台上,防止刚性硅基底移动,这样保证贴膜过程中没有气泡且表面平整。Preferably, in step two, place the rigid silicon substrate on the workbench of the laminating machine, use the heating function of the laminating machine to heat the rigid silicon substrate to 80°C to remove water vapor, and at the same time open the vacuum valve of the workbench of the laminating machine to proceed. Use vacuum to adsorb the rigid silicon substrate to the workbench of the laminating machine, and then paste the polyimide tape onto the rigid silicon substrate. Removing water vapor can effectively prevent bubbling under the polyimide tape during subsequent film application. The rigid silicon substrate is adsorbed to the workbench of the film application machine by vacuuming to prevent the rigid silicon substrate from moving. This ensures that there are no bubbles and the surface is free of bubbles during the film application process. smooth.
优选的,步骤三中,制作单层MEMS微纳线圈之前,先在聚酰亚胺胶带表面溅射粘附层和种子层,粘附层和种子层的厚度比为1:5或1:10,粘附层和种子层整体作为导电层。粘附层和导电层可分别为铬层和铜层、铬层和金层或者钛层和铜层。Preferably, in step three, before making a single-layer MEMS micro-nano coil, the adhesion layer and the seed layer are sputtered on the surface of the polyimide tape. The thickness ratio of the adhesion layer and the seed layer is 1:5 or 1:10. , the adhesion layer and the seed layer as a whole serve as a conductive layer. The adhesion layer and the conductive layer may be a chromium layer and a copper layer, a chromium layer and a gold layer, or a titanium layer and a copper layer, respectively.
优选的,制作单层MEMS微纳线圈的子步骤为:Preferably, the sub-steps for making a single-layer MEMS micro-nano coil are:
S1、将设置有导电层的刚性硅基底置于匀胶机的工作台上,旋涂光刻胶,当光刻胶达到设定厚度后,采用光刻机进行光刻曝光图形化处理,再用显影液进行处理,利用等离子去胶机去除残余光刻胶,最后在高温烘台上进行坚膜处理,第一层线圈模板制备完成;S1. Place the rigid silicon substrate with the conductive layer on the workbench of the glue leveling machine and spin-coat the photoresist. When the photoresist reaches the set thickness, use a photolithography machine to perform photolithography exposure patterning processing, and then Process with developer, use a plasma remover to remove residual photoresist, and finally harden the film on a high-temperature baking table. The first layer of coil template is prepared;
S2、蘸取丙酮溶液在刚性硅基底的周向上均匀擦拭十个电极接口,在相对的一组电极接口处连接电源夹对第一层线圈模板进行电镀处理,一定时间后交换至下一组相对的电极接口,轮流连接十个电极接口后直至整个单层线圈制备完成。S2. Dip the acetone solution and wipe the ten electrode interfaces evenly in the circumferential direction of the rigid silicon substrate. Connect the power clips to the opposite set of electrode interfaces to perform electroplating treatment on the first layer coil template. After a certain period of time, switch to the next set of opposite electrode interfaces. The electrode interfaces are connected in turn until the entire single-layer coil is prepared.
本发明提供的技术方案与现有技术相比具有如下优点:本发明提出一种简单、高效且经济的方法可控剥离柔性微纳线圈,将聚酰亚胺胶带即工业级聚酰亚胺薄膜粘贴在硅片上作基底时,以硅片为硬性基底,聚酰亚胺膜作为可控剥离柔性基底膜,同时在上边进行微纳线圈器件的制作;相对于传统的电镀涂层,光敏性聚酰亚胺膜作为应力层应力较小,不太容易导致零件变形或者损坏器件,这对于柔性线圈微纳工艺尤为重要;同时通过调节工艺参数来实现涂层的均匀性,确保了涂层厚度的一致性和保护性能的稳定性,能进一步保证零件的使用寿命;柔性微纳线圈可控剥离首先在器件顶部旋涂不同厚度的聚酰亚胺聚合物作为应力层,其张应力驱动膜层结构产生劈裂断口促进可控剥离,待应力层固化后将整个器件放在丙酮溶液中,聚酰亚胺胶带下表面的聚氨酯胶(多聚异氰酸酯和多元醇醚)的高分子易与有机溶剂丙酮(酮类物质)发生反应,从而降低聚酰亚胺胶带与硅片间的相互作用力,减少胶带的粘附力,最终实现整个纳米柔性线圈器件从硅基底脱离,达到可控剥离的效果。Compared with the existing technology, the technical solution provided by the present invention has the following advantages: the present invention proposes a simple, efficient and economical method to controllably peel off flexible micro-nano coils, and use polyimide tape, that is, industrial grade polyimide film When pasted on a silicon wafer as the base, the silicon wafer is used as the hard base, the polyimide film is used as the controllable peelable flexible base film, and the micro-nano coil device is produced on top; compared with the traditional electroplating coating, the photosensitivity As a stress layer, the polyimide film has less stress and is less likely to cause deformation of parts or damage to devices. This is particularly important for flexible coil micro-nano processes; at the same time, the uniformity of the coating is achieved by adjusting process parameters to ensure the thickness of the coating. The consistency and stability of the protective performance can further ensure the service life of the parts; the controllable peeling of the flexible micro-nano coils first spin-coates polyimide polymers of different thicknesses on the top of the device as a stress layer, and its tensile stress drives the film layer The structure generates split fractures to promote controlled peeling. After the stress layer is cured, the entire device is placed in an acetone solution. The polymers of the polyurethane glue (polyisocyanate and polyol ether) on the lower surface of the polyimide tape are easy to react with organic solvents. Acetone (ketone substance) reacts, thereby reducing the interaction force between the polyimide tape and the silicon wafer, reducing the adhesive force of the tape, and finally achieving the detachment of the entire nano-flexible coil device from the silicon substrate to achieve a controllable peeling effect .
附图说明Description of drawings
此处的附图被并入说明书中并构成本说明书的一部分,示出了符合本发明的实施例,并与说明书一起用于解释本发明的原理。The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description serve to explain the principles of the invention.
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,对于本领域普通技术人员而言,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, for those of ordinary skill in the art, It is said that other drawings can also be obtained based on these drawings without exerting creative work.
图1为本发明所述一种高密度柔性微纳线圈的可控剥离制备方法的流程图;Figure 1 is a flow chart of a controllable peeling preparation method of high-density flexible micro-nano coils according to the present invention;
图2为本发明所述刚性硅基底的结构示意图;Figure 2 is a schematic structural diagram of the rigid silicon substrate according to the present invention;
图3为在本发明所述刚性硅基底上增加聚酰亚胺胶带后的结构示意图;Figure 3 is a schematic structural diagram after adding polyimide tape on the rigid silicon substrate of the present invention;
图4为在图3基础上增加第一层MEMS微纳线圈后的结构示意图;Figure 4 is a schematic structural diagram after adding the first layer of MEMS micro-nano coils based on Figure 3;
图5为在图4基础上增加中间绝缘层后的结构示意图;Figure 5 is a schematic structural diagram after adding an intermediate insulation layer on the basis of Figure 4;
图6为在图5基础上增加第二层MEMS微纳线圈后的结构示意图;Figure 6 is a schematic structural diagram after adding a second layer of MEMS micro-nano coils based on Figure 5;
图7为在图6基础上增加应力绝缘层后的结构示意图;Figure 7 is a schematic structural diagram after adding a stress insulation layer on the basis of Figure 6;
图8为将多层MEMS微纳线圈整体从刚性硅基底上剥离的示意图;Figure 8 is a schematic diagram of peeling off the entire multi-layer MEMS micro-nano coil from the rigid silicon substrate;
图9为本发明所述方法最终剥离后的产物示意图;Figure 9 is a schematic diagram of the product after final peeling by the method of the present invention;
图10为本发明具体实施例中可控剥离的不同尺寸柔性微纳线圈的开路电压输出图。Figure 10 is an open circuit voltage output diagram of controllably peeled flexible micro-nano coils of different sizes in a specific embodiment of the present invention.
图中:1、刚性硅基底;2、聚酰亚胺胶带;3、第一层MEMS微纳线圈;4、中间绝缘层;5、第二层MEMS微纳线圈;6、应力绝缘层。In the picture: 1. Rigid silicon substrate; 2. Polyimide tape; 3. The first layer of MEMS micro-nano coils; 4. The middle insulation layer; 5. The second layer of MEMS micro-nano coils; 6. Stress insulation layer.
具体实施方式Detailed ways
为了能够更清楚地理解本发明的上述目的、特征和优点,下面将对本发明的方案进行进一步描述。需要说明的是,在不冲突的情况下,本发明的实施例及实施例中的特征可以相互组合。In order to understand the above objects, features and advantages of the present invention more clearly, the solution of the present invention will be further described below. It should be noted that, as long as there is no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.
在描述中,需要说明的是,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性。需要说明的是,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通。对于本领域的普通技术人员而言,可以根据具体情况理解上述术语的具体含义。In the description, it should be noted that the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance. It should be noted that, unless otherwise clearly stated and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; It can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be an internal connection between two components. For those of ordinary skill in the art, the specific meanings of the above terms can be understood according to specific circumstances.
在下面的描述中阐述了很多具体细节以便于充分理解本发明,但本发明还可以采用其他不同于在此描述的方式来实施;显然,说明书中的实施例只是本发明的一部分实施例,而不是全部的实施例。Many specific details are set forth in the following description to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here; obviously, the embodiments in the description are only part of the embodiments of the present invention, and Not all examples.
下面结合附图1至图10对本发明的具体实施例进行详细说明。Specific embodiments of the present invention will be described in detail below with reference to FIGS. 1 to 10 .
在一个实施例中,如图1所示,一种高密度柔性微纳线圈的可控剥离制备方法,包括如下步骤,In one embodiment, as shown in Figure 1, a controllable peeling preparation method of high-density flexible micro-nano coils includes the following steps:
步骤一、准备刚性硅基底1并利用去离子水和氮气对刚性硅基底1进行清洁处理,具体实施例中,刚性硅基底1为圆形片状结构;Step 1: Prepare the rigid silicon substrate 1 and use deionized water and nitrogen to clean the rigid silicon substrate 1. In a specific embodiment, the rigid silicon substrate 1 has a circular sheet structure;
步骤二、在工艺间室温(20℃)条件下,在步骤一中的刚性硅基底1上表面粘贴聚酰亚胺胶带2,粘贴聚酰亚胺胶带2后的刚性硅基底1作为制作柔性微纳线圈的基底,刚性硅基底1为后续工艺提供平整的平面,聚酰亚胺胶带2采用聚氨酯胶,将刚性硅基底1置于贴膜机的工作台上,利用贴膜机的加热功能将刚性硅基底1加热至80℃,除去水蒸气,防止后续粘贴聚酰亚胺胶带2时,聚酰亚胺胶带2底部鼓泡,影响后续工艺操作,同时打开贴膜机工作台的真空阀,进行抽真空吸附,使刚性硅基底1吸附至贴膜机工作台上,防止粘贴聚酰亚胺胶带2过程中,刚性硅基底1发生移动,这样保证粘贴聚酰亚胺胶带2过程中没有鼓泡且表面平整,再将聚酰亚胺胶带2粘贴至刚性硅基底1上;之后利用去离子水和氮气对聚酰亚胺胶带2表面进行清洗处理;Step 2: At room temperature (20°C) in the process room, paste polyimide tape 2 on the upper surface of the rigid silicon substrate 1 in step 1. The rigid silicon substrate 1 after pasting the polyimide tape 2 is used to make the flexible micro As the base of the nanocoil, the rigid silicon substrate 1 provides a flat surface for subsequent processes. The polyimide tape 2 uses polyurethane glue. Place the rigid silicon substrate 1 on the workbench of the laminating machine, and use the heating function of the laminating machine to melt the rigid silicon Heat the substrate 1 to 80°C to remove water vapor to prevent the bottom of the polyimide tape 2 from bubbling when the polyimide tape 2 is subsequently pasted, affecting subsequent process operations. At the same time, open the vacuum valve of the laminating machine workbench to perform vacuuming. Adsorption, so that the rigid silicon substrate 1 is adsorbed to the workbench of the laminating machine to prevent the rigid silicon substrate 1 from moving during the process of pasting the polyimide tape 2, thus ensuring that there are no bubbles and the surface is smooth during the process of pasting the polyimide tape 2 , and then stick the polyimide tape 2 to the rigid silicon substrate 1; then use deionized water and nitrogen to clean the surface of the polyimide tape 2;
步骤三、制作单层MEMS微纳线圈之前,先在聚酰亚胺胶带2表面溅射粘附层和种子层,粘附层和种子层的厚度比为1:5或1:10,粘附层和种子层整体作为导电层为后续电镀工作做准备,粘附层和导电层可分别为铬层和铜层、铬层和金层或者钛层和铜层,具体实施例中,溅射铬层厚度为20nm,铜层厚度为100nm;在刚性硅基底1顶部的聚酰亚胺胶带2上制作单层MEMS微纳线圈,之后旋涂光敏性聚酰亚胺膜,并且在光敏性聚酰亚胺膜上光刻与MEMS微纳线圈的两个电极对应的通孔;制作单层MEMS微纳线圈的子步骤为:Step 3: Before making a single-layer MEMS micro-nano coil, first sputter the adhesion layer and the seed layer on the surface of the polyimide tape 2. The thickness ratio of the adhesion layer and the seed layer is 1:5 or 1:10. The entire layer and seed layer serve as a conductive layer to prepare for subsequent electroplating work. The adhesion layer and the conductive layer can be respectively a chromium layer and a copper layer, a chromium layer and a gold layer, or a titanium layer and a copper layer. In specific embodiments, chromium is sputtered The layer thickness is 20nm, and the copper layer thickness is 100nm; a single-layer MEMS micro-nano coil is made on the polyimide tape 2 on top of the rigid silicon substrate 1, and then a photosensitive polyimide film is spin-coated, and the photosensitive polyimide film is Photoetch through holes corresponding to the two electrodes of the MEMS micro-nano coil on the imine film; the sub-steps for making a single-layer MEMS micro-nano coil are:
S1、将设置有导电层的刚性硅基底1置于匀胶机的工作台上,旋涂型号为AZ4620的光刻胶,以1000r/min匀胶,100℃烘台进行前烘150s,中间间隔50min后,再次匀第二遍胶,此时光刻胶厚度将达到15um左右,100℃烘台再进行前烘150s;放至室温,采用型号为EVG610的光刻机设置相关参数进行光刻操作,刚性硅基底1以及其上附着物整体的厚度为620um,其中光刻胶厚15um,进行光刻曝光图形化处理,此时再用型号为AZ400K的显影液以1:3配置进行处理,显影时常55s左右,利用等离子去胶机去除残余光刻胶,等离子去胶机参数设置O2-300W-2min,最后在120℃高温烘台上坚膜15min,第一层线圈模板制备完成;S1. Place the rigid silicon substrate 1 with the conductive layer on the workbench of the glue leveling machine, spin-coat the photoresist model AZ4620, spread the glue at 1000r/min, and perform pre-baking for 150 seconds on a 100°C drying table with an interval in between. After 50 minutes, homogenize the glue for the second time. At this time, the thickness of the photoresist will reach about 15um. Pre-bake for another 150 seconds on the 100°C drying table. Place it at room temperature and use the EVG610 photolithography machine to set the relevant parameters for the photolithography operation. The overall thickness of the rigid silicon substrate 1 and the attachments on it is 620um, of which the photoresist thickness is 15um. Photolithography exposure patterning is performed. At this time, the developer model AZ400K is used with a 1:3 configuration. The development is often At about 55 seconds, use a plasma remover to remove the residual photoresist. The parameters of the plasma remover are set to O2-300W-2min. Finally, the film is hardened on a high-temperature baking table at 120°C for 15 minutes. The first layer of coil template is prepared;
S2、将步骤三制作好的第一层线圈模板通过电镀工艺,完成第一层微纳线圈的加工,具体操作为:用无尘棒蘸取丙酮溶液在刚性硅基底1的周向上均匀擦拭十个电极接口,在相对的一组电极接口处连接电源夹对第一层线圈模板进行电镀处理,电源夹为直流电源夹或交流电源夹;一定时间后交换至下一组相对的电极接口,这样将保证整个电镀层厚度一致,具体根据电镀面积和电镀液浓度,计算设置电流强度为0.1A,每个电极处分别电镀1min,电镀10min,轮流连接十个电极接口后直至10um厚的第一层MEMS微纳线圈3制备完成;S2. Use the first-layer coil template produced in step 3 to complete the processing of the first-layer micro-nano coil through the electroplating process. The specific operation is: dip a dust-free rod into the acetone solution and wipe it evenly on the circumferential direction of the rigid silicon substrate 1 for ten minutes. Each electrode interface is connected to a power supply clip at the opposite set of electrode interfaces for electroplating of the first layer coil template. The power supply clamp is a DC power supply clamp or an AC power supply clamp; after a certain period of time, it is switched to the next set of opposite electrode interfaces, so that The thickness of the entire electroplating layer will be ensured to be consistent. According to the plating area and the concentration of the plating solution, the calculated current intensity is set to 0.1A. Each electrode is electroplated for 1 minute and 10 minutes, and the ten electrode interfaces are connected in turn until the first layer is 10um thick. MEMS micro-nano coil 3 is prepared;
步骤四、重复步骤三直至MEMS微纳线圈的总层数达到设计要求;同步骤三,依次再进行溅射、涂光刻胶、对准曝光、显影和电镀;本实施例中设置双层线圈,即双层线圈包括第一层MEMS微纳线圈3和第二层MEMS微纳线圈5;设置在多层线圈之间的光敏性聚酰亚胺膜作为中间绝缘层4;Step 4: Repeat step 3 until the total number of layers of MEMS micro-nano coils reaches the design requirements; in the same manner as step 3, perform sputtering, photoresist coating, alignment exposure, development and electroplating; in this embodiment, a double-layer coil is set , that is, the double-layer coil includes a first layer of MEMS micro-nano coils 3 and a second layer of MEMS micro-nano coils 5; a photosensitive polyimide film disposed between the multi-layer coils serves as the intermediate insulating layer 4;
步骤五、最终在最顶层旋涂作为应力绝缘层6的光敏性聚酰亚胺膜进行封装,调节应力绝缘层6的厚度以控制其应力,然后将光敏性聚酰亚胺膜进行120℃前烘坚膜处理,运用EVG610光刻机设置相关参数,本实施例中设置双层线圈是整体厚度达到620um,光敏性聚酰亚胺膜厚15um,进行光刻曝光图形化处理,再用稀释的AZ400K显影液显影100s左右,在应力绝缘层6上光刻与MEMS微纳线圈的两个电极对应的通孔;露出柔性线圈的金属电极,最后进行光敏性聚酰亚胺膜固化,进行后续连接导电;Step 5: Finally, spin-coat the photosensitive polyimide film as the stress insulating layer 6 on the top layer for encapsulation. Adjust the thickness of the stress insulating layer 6 to control its stress, and then process the photosensitive polyimide film at 120°C. To dry the film, use the EVG610 photolithography machine to set the relevant parameters. In this example, the double-layer coil is set to have an overall thickness of 620um, and the photosensitive polyimide film is 15um thick. Photolithography exposure patterning is performed, and then diluted Develop with AZ400K developer for about 100 seconds, photo-etch through holes corresponding to the two electrodes of the MEMS micro-nano coil on the stress insulation layer 6; expose the metal electrodes of the flexible coil, and finally cure the photosensitive polyimide film for subsequent connections. conduct electricity;
步骤六、将步骤五得到的成品整体浸泡于丙酮溶液,经过48h后,丙酮将和聚酰亚胺胶带2下的高分子聚合物聚氨酯胶发生反应,从而降低高密度线圈器件与硅片之间的粘性,又因旋涂在最顶层的应力绝缘层6,其张应力驱动器件膜层结构产生裂口,并沿着聚酰亚胺胶带2与刚性硅基底1的界面传播,在应力绝缘层6的表面贴上一层柔性把手(如胶带),只要对把手层施加一个小的力,就会在聚酰亚胺胶带2的突变边缘处形成裂纹,从而成功将多层MEMS微纳线圈整体从聚酰亚胺胶带2与刚性硅基底1的交界处剥离,得到柔性微纳线圈。Step 6: Soak the entire finished product obtained in Step 5 into the acetone solution. After 48 hours, the acetone will react with the polymer polyurethane glue under the polyimide tape 2, thereby reducing the gap between the high-density coil device and the silicon wafer. Due to the viscosity of the stress insulating layer 6 spin-coated on the topmost layer, the tensile stress drives the device film structure to produce cracks, and propagates along the interface between the polyimide tape 2 and the rigid silicon substrate 1, and in the stress insulating layer 6 A layer of flexible handle (such as tape) is attached to the surface. As long as a small force is applied to the handle layer, cracks will form at the abrupt edge of the polyimide tape 2, thereby successfully integrating the multi-layer MEMS micro-nano coil from the whole. The interface between the polyimide tape 2 and the rigid silicon substrate 1 is peeled off to obtain a flexible micro-nano coil.
本实施例中,通过本发明所述方法制备出了柔性微纳线圈薄膜,在没有弯曲的状态下测试了该薄膜的电阻,边长为1厘米的方形线圈电阻值为60Ω左右,边长为1.5厘米的方形线圈电阻值为100Ω左右,边长为2厘米的方形线圈电阻值为200Ω左右,同时在激振台上,以频率为7Hz左右,发生电磁感应现象,通过线圈的磁通量发生变化,线圈放在侧面,距离N52磁铁2毫米,测得上述三种不同边长的线圈开路电压输出分别为40mv左右、80mv左右、120mv左右。因此,通过此方法可控剥离的柔性微纳线圈具有良好的输出性能。In this embodiment, a flexible micro-nano coil film was prepared by the method of the present invention, and the resistance of the film was tested without bending. The resistance value of a square coil with a side length of 1 cm is about 60Ω, and the side length is The resistance value of a 1.5 cm square coil is about 100Ω, and the resistance value of a square coil with a side length of 2 cm is about 200Ω. At the same time, on the excitation table, at a frequency of about 7Hz, electromagnetic induction occurs, and the magnetic flux passing through the coil changes. The coil is placed on the side, 2 mm away from the N52 magnet. The measured open circuit voltage output of the above three different side lengths of the coil is about 40mv, about 80mv, and about 120mv respectively. Therefore, the flexible micro-nano coils controlled by this method have good output performance.
以上所述仅是本发明的具体实施方式,使本领域技术人员能够理解或实现本发明。尽管参照前述各实施例进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分或者全部技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离各实施例技术方案的范围,其均应涵盖权利要求书的保护范围中。The above descriptions are only specific embodiments of the present invention, enabling those skilled in the art to understand or implement the present invention. Although detailed descriptions have been made with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent substitutions for some or all of the technical features; and These modifications or substitutions do not deviate from the essence of the corresponding technical solutions from the scope of the technical solutions of each embodiment, and they should all be covered by the protection scope of the claims.
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