CN104760919A - Method for manufacturing thermal sensitive thin film and thermal sensitive thin film lead - Google Patents
Method for manufacturing thermal sensitive thin film and thermal sensitive thin film lead Download PDFInfo
- Publication number
- CN104760919A CN104760919A CN201410689647.XA CN201410689647A CN104760919A CN 104760919 A CN104760919 A CN 104760919A CN 201410689647 A CN201410689647 A CN 201410689647A CN 104760919 A CN104760919 A CN 104760919A
- Authority
- CN
- China
- Prior art keywords
- film
- adhesive tape
- thin film
- sputtering
- thermosensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Manufacturing Of Printed Wiring (AREA)
Abstract
The invention discloses a method for manufacturing a thermal sensitive thin film and a thermal sensitive thin film lead. The manufacturing method comprises the following steps of selecting a PI adhesive tape as a flexible substrate material, attaching the PI adhesive tape on a glass substrate, and cleaning and drying the surface of the PI adhesive tape; spirally coating with a light-sensitive lacquer, and exposing and developing to form a thin film thermal resistor resist image; sputtering the thin film and thermally treating the thin film in the same sputtering cavity; stripping to form a thin film thermal resistor; spirally coating with the light-sensitive lacquer, exposing and developing to form a thin film connection lead light-sensitive lacquer image; electrically plating a thin film connection lead; releasing the PI adhesive tape from the glass substrate. According to the technical scheme, the thermal sensitive thin film with better performances and the connection lead can be prepared.
Description
Technical field
The present invention relates to MEMS (MEMS) field, be specifically related to a kind of thermosensitive film based on flexible substrates and method for manufacturing lead thereof.
Background technology
Make MEMS(Micro-Electro-Mechanical System on a flexible substrate, MEMS) device can be attached to the body surface of arbitrary shape and size, can detect the real-time distribution of the physical parameters such as the shearing force on nonplanar object surface, pressure, temperature and humidity.Therefore, the flexible substrates with superperformance is extremely important for the performance of senser element.
Polyimides (PI, PolyimideFilm) film is a kind of high temperature resistant organic polymer thin film, in yellow transparent shape.It is the film class insulating materials that performance is best in the world at present, has excellent mechanical property, electrical property, chemical stability and very high radiation resistance, high temperature resistant and resistance to low temperature (-269 DEG C to+400 DEG C).PI material has the good condition as flexible substrates, is generally on PI, form required sensing element (as thermosensitive film)) and annex (as connected wire), therefore the firm attachment of sensing element and annex thereof does not come off extremely important.
PI material generally has two kinds, and one is aggressiveness before liquid polyimides, and one is solid polyimide film.Because carry out following process all to need flexible substrates to be attached on rigid substrate, therefore one deck sacrifice layer must first be applied in rigid substrate when liquid polyimides forms PI flexible substrates, then by being repeatedly coated with and elevated cure formation PI flexible substrates, and then in PI flexible substrates, form thermosensitive film and connect wire.But the method process, takes time and effort and likely occur bubble and uneven failed phenomenon, thus affect the thermosensitive film that following process obtains and the adhesive force connecting wire thereof.If solid polyimide film is directly attached in rigid substrate and forms PI flexible substrates by employing, although the troublesome operation of solidification can be eliminated relative to a kind of front method, but when subsides because the out-of-flatness of PI film itself is easy to producing bubble between PI and glue, also affect the thermosensitive film that following process obtains and the adhesive force connecting wire thereof.
Therefore, the existing all each defectiveness of methodical two kinds of processing modes, affects the performance of thermosensitive film and connection wire thereof.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of thermosensitive film and method for manufacturing lead thereof, and energy is acquired can better thermosensitive film and connection wire thereof.
For solving the problems of the technologies described above, technical scheme provided by the invention is as follows:
The invention provides a kind of thermosensitive film and method for manufacturing lead thereof, comprising: select polyimides PI adhesive tape as flexible base material, described PI tape sticker is invested glass substrate, described PI tape surface is cleaned and dried; Whirlpool resist coating, exposure imaging forms thin-film thermistor photoetching offset plate figure; Sputtered film is also heat-treated film in same sputtering chamber; Peel off and form thin-film thermistor; Whirlpool resist coating, exposure imaging forms the connection wire photoetching offset plate figure of described film; Electroplate the connection wire of described film; Described PI adhesive tape is discharged from glass substrate.
Preferably, described described thin-film thermistor photoetching offset plate figure is heat-treated before comprise: sputtering one deck chromium articulamentum.
Preferably, described sputtering chromium articulamentum, sputtering thermosensitive film and heat-treating thermosensitive film carry out in same cavity.
Preferably, described whirlpool resist coating, exposure imaging comprises before forming the connection wire photoetching offset plate figure of described film: sputtering one deck titanium/copper seed layer; Comprise after the connection wire of the described film of described plating: remove described titanium/copper seed layer.
Preferably, described by described PI adhesive tape from glass substrate release after also comprise: at surface deposition Parylene protective layer.
Preferably, described PI adhesive tape is the organic pressure-sensitive silica gel of polyimide film tape.
Preferably, described PI adhesive tape is specially from glass substrate release: utilize toluene to be discharged from glass substrate by described PI adhesive tape.
Preferably, remove described titanium/copper seed layer described in be specially: utilize sulfuric acid and sulfuric acid to add hydrogen peroxide solution and remove described titanium/copper seed layer.
As can be seen from technique scheme, the present invention has following technique effect: the present invention program, and instead of the polyimides of conventional method use with PI adhesive tape before, aggressiveness solidify to form PI film or PI cured film (solid polyimide film).PI film is solidify to form relative to aggressiveness before polyimides, the method of PI adhesive tape is used to seem more convenient, the integral thickness uniformity of PI film is better, and the most important thing is glue and PI originally one, so there will not be the bubble affecting following process, the thermosensitive film obtained like this with and to be connected the adhesive force of wire and flexible substrates stronger.Relative to PI cured film, the laminating of PI adhesive tape and matrix, more firmly with smooth, there will not be bubble, this guarantees validity and the yield rate of subsequent technique process, effectively can improve the adhesive force of thermosensitive film and connection wire and flexible substrates.
Further, the present invention program, one deck chromium articulamentum first can be sputtered before heat-treating, because sputtering technology adopts three target magnetic control sputtering depositing devices, only chromium and nickel target need be placed on simultaneously in sputtering cavity, therefore the increase of articulamentum does not make process engineering become complicated, but considerably increase the bonding strength of nickel and PI.
Further, heat treatment is very important for the thermosensitive film performance as sensing element, in the present invention program, heat-treat in sputtering cavity simultaneously and just avoid nickel film and to be exposed in air oxidation and thermosensitive film resistor is increased and TCR(temperature coefficient of resistance, temperature-coefficient of electrical resistance) reduction.And the present invention utilizes same equipment and condition, and working (machining) efficiency is higher.
Further, in the present invention program, sputtered titanium/copper seed layer before plating, makes the more smooth densification of electro-coppering, is connected to obtain close and firm more with substrate.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the first pass schematic diagram of the inventive method;
Fig. 2 is second schematic flow sheet of the inventive method;
Fig. 3 is the thermosensitive film and the connection wire work flow schematic diagram thereof that the present invention is based on flexible substrates;
Fig. 4 is the Electronic Speculum schematic diagram of the present invention's 4.92 μm of width films thermistors.
Wherein, in Fig. 3: 1-PI adhesive tape 2-substrate of glass 3-reversal photoresist 4-chromium nickel film 5-titanium copper film 6-positive photoresist 7-electro-coppering.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making other embodiments all obtained under creative work prerequisite, belong to the scope of protection of the invention.
The invention provides a kind of thermosensitive film and method for manufacturing lead thereof, energy is acquired can better thermosensitive film and connection wire thereof.
Below in conjunction with accompanying drawing, introduce the content of technical solution of the present invention in detail.
Fig. 1 is the first pass schematic diagram of the inventive method.Comprise step:
101, select PI adhesive tape as flexible base material, described PI tape sticker is invested glass substrate, described PI tape surface is cleaned and dried;
102, whirlpool resist coating, exposure imaging forms thin-film thermistor photoetching offset plate figure;
103, sputtered film in same sputtering chamber, film being heat-treated;
104, formation thin-film thermistor is peeled off;
105, whirlpool resist coating, exposure imaging forms the connection wire photoetching offset plate figure of described film;
106, the connection wire of described film is electroplated;
107, described PI adhesive tape is discharged from glass substrate.
Fig. 2 is second schematic flow sheet of the inventive method.Fig. 2 more describes method processing procedure in detail relative to Fig. 1, comprises step:
201, select PI adhesive tape as flexible base material, described PI tape sticker is invested glass substrate, described PI tape surface is cleaned and dried;
202, whirlpool resist coating, exposure imaging forms thin-film thermistor photoetching offset plate figure;
203, sputter one deck chromium articulamentum, sputter thermosensitive film and thermosensitive film is heat-treated;
204, formation thin-film thermistor is peeled off;
205, one deck titanium/copper seed layer is sputtered;
206, whirlpool resist coating, exposure imaging forms the connection wire photoetching offset plate figure of described film;
207, the connection wire of described film is electroplated;
208, described titanium/copper seed layer is removed;
209, toluene soak is utilized to be discharged from glass substrate by described PI adhesive tape;
210, at surface deposition Parylene protective layer.
Fig. 3 is the thermosensitive film based on flexible substrates that the present embodiment of the present invention proposes and the preparation method connecting wire thereof, describe in more detail the present invention program.In Fig. 3: 1-PI adhesive tape 2-substrate of glass 3-reversal photoresist 4-chromium nickel film 5-titanium copper film 6-positive photoresist 7-electro-coppering.And Fig. 4, be the Electronic Speculum schematic diagram of the present invention's 4.92 μm of width films thermistors.
Processing procedure shown in Fig. 3 comprises step:
Step one, PI adhesive tape 1 to be attached on clean glass substrate (substrate of glass 2), to utilize acetone and alcohol to carry out Ultrasonic Cleaning post-drying to PI tape surface.
Wherein, bake out temperature can select 150 DEG C, and the time can select scope at 10-30min because humidity in season changes.As Fig. 3 (a).
PI adhesive tape (Kapton Tape), its most important characteristic is exactly high temperature resistant.Concrete, PI adhesive tape of the present invention is the organic pressure-sensitive silica gel of polyimide film tape.
Step 2, whirlpool are coated with reversal photoresist 3, carry out reversion and dry and generally to expose to the sun after soft baking, exposure, development formation nickel thin-film thermistor photoetching offset plate figure.As Fig. 3 (b) (c).
Reversal photoresist 3 in figure can be specifically reversal photoresist AZ5214.
The thin nickel metal film layer 4 that thickness is 300 nanometers is sputtered after step 3, sputtering skim chromium; And under environment identical in same cavity, annealing in process is carried out to sputtered metal film.As Fig. 3 (d).
PI is formed required sensing element and annex thereof and firm attachment not come off be extremely important.The present invention finds, metallic nickel and the copper adhesive force on PI is actual so not desirable, but the adhesive force of chromium and titanium then obviously better, so the present invention first sputters one deck chromium or titanium as articulamentum before sputtering ambrose alloy, then considerably increase the adhesive force of sensing element and annex, make senser element durable more, flexible substrates is transferred arbitrarily also no problem.In this step, be that sputtering skim chromium illustrates as articulamentum.
The present invention program, one deck chromium articulamentum is first sputtered before heat-treating, because sputtering technology adopts three target magnetic control sputtering depositing devices, only chromium and nickel target need be placed on simultaneously in sputtering cavity, therefore the increase of articulamentum does not make process engineering become complicated, but considerably increase the bonding strength of nickel and PI.
Because heat treatment is very important for the thermosensitive film performance as sensing element, in the present invention program, heat-treat in sputtering cavity simultaneously and just avoid nickel film and to be exposed in air oxidation and thermosensitive film resistor is increased and TCR(temperature coefficient of resistance, temperature-coefficient of electrical resistance) reduction.And the present invention utilizes same equipment and condition, and working (machining) efficiency is higher.
Step 4, be soaked in acetone the metal removed above photoresist and glue, peel off and form nickel thin-film thermistor, width is 5 microns.As Fig. 3 (e).
Step 5, sputtering one deck titanium/copper seed layer.As Fig. 3 (f).In figure, 5 is titanium copper films.
In the present invention program, sputtered titanium/copper seed layer before plating, makes the more smooth densification of electro-coppering, is connected to obtain close and firm more with substrate.
Step 6, whirlpool are coated with positive photoresist AZ4620, and exposure imaging is formed and connects wire photoetching offset plate figure, and copper line width is 500 μm, as Fig. 3 (g), (h).In figure, 6 is positive photoresists.
Step 7, electroplating thickness are that the copper of 50 μm connects wire.As Fig. 3 (i).In figure, 7 is electro-copperings.
Step 8, utilize sulfuric acid and sulfuric acid to add hydrogen peroxide solution to remove copper and titanium Seed Layer, overall figure completes.As Fig. 3 (j).
Step 9, toluene soak is utilized to be released from substrate of glass by PI adhesive tape.As Fig. 3 (k).
Step 10, at surface deposition Parylene protective layer.
Can find, the inventive method is affixed on glass substrate by PI adhesive tape; Whirlpool resist coating on PI adhesive tape, exposure imaging goes out metal thermo-sensitive film pattern; Sputtering chromium/nickel is also heat-treated in same sputtering chamber; After peeling off, thermosensitive film is formed; Sputtering seed layer titanium/copper again; Whirlpool resist coating, exposure imaging exposes connection wire pattern; Electro-coppering wire; Remove Seed Layer; Remove photoresist and PI discharged from glass.Present invention process is succinctly efficient, and metal thermo-sensitive film is adhesion-tight in PI substrate, and heat treated metal film is more superior as sensor sensing element function, and the interference that connection wire is measured for thermosensitive film resistor is minimum.
Concrete, the present invention program, instead of the polyimides of conventional method use with PI adhesive tape before, aggressiveness solidify to form PI film or PI cured film (solid polyimide film).PI film is solidify to form relative to aggressiveness before polyimides, the method of PI adhesive tape is used to seem more convenient, the integral thickness uniformity of PI film is better, and the most important thing is glue and PI originally one, so there will not be the bubble affecting following process, the thermosensitive film obtained like this with and to be connected the adhesive force of wire and flexible substrates stronger.Relative to PI cured film, the laminating of PI adhesive tape and matrix, more firmly with smooth, there will not be bubble, this guarantees validity and the yield rate of subsequent technique process, effectively can improve the adhesive force of thermosensitive film and connection wire and flexible substrates.
Further, the present invention program, one deck chromium articulamentum first can be sputtered before heat-treating, because sputtering technology adopts three target magnetic control sputtering depositing devices, only chromium and nickel target need be placed on simultaneously in sputtering cavity, therefore the increase of articulamentum does not make process engineering become complicated, but considerably increase the bonding strength of nickel and PI.
Further, heat treatment is very important for the thermosensitive film performance as sensing element, in the present invention program, heat-treat in sputtering cavity simultaneously and just avoid nickel film and to be exposed in air oxidation and thermosensitive film resistor is increased and TCR(temperature coefficient of resistance, temperature-coefficient of electrical resistance) reduction.And the present invention utilizes same equipment and condition, and working (machining) efficiency is higher.
Further, in the present invention program, sputtered titanium/copper seed layer before plating, makes the more smooth densification of electro-coppering, is connected to obtain close and firm more with substrate.
Above to the technical scheme that the embodiment of the present invention provides, be described in detail, apply specific case herein to set forth principle of the present invention and embodiment, the explanation of above embodiment just understands method of the present invention and core concept thereof for helping; Meanwhile, for one of ordinary skill in the art, according to thought of the present invention, all will change in specific embodiments and applications, in sum, this description should not be construed as limitation of the present invention.
Claims (8)
1. thermosensitive film and a method for manufacturing lead thereof, is characterized in that, comprising:
Select polyimides PI adhesive tape as flexible base material, described PI tape sticker is invested glass substrate, described PI tape surface is cleaned and dried;
Whirlpool resist coating, exposure imaging forms thin-film thermistor photoetching offset plate figure;
Sputtered film is also heat-treated film in same sputtering chamber;
Peel off and form thin-film thermistor;
Whirlpool resist coating, exposure imaging forms the connection wire photoetching offset plate figure of described film;
Electroplate the connection wire of described film;
Described PI adhesive tape is discharged from glass substrate.
2. thermosensitive film according to claim 1 and method for manufacturing lead thereof, is characterized in that, described thermosensitive film sputtering also comprises before heat treatment: sputtering one deck chromium articulamentum.
3. thermosensitive film according to claim 2 and method for manufacturing lead thereof, is characterized in that, described sputtering chromium articulamentum, sputtering thermosensitive film and heat-treating thermosensitive film carry out in same cavity.
4. thermosensitive film according to claim 1 and method for manufacturing lead thereof, is characterized in that, described whirlpool resist coating, and exposure imaging comprises before forming the connection wire photoetching offset plate figure of described film: sputtering one deck titanium/copper seed layer;
Comprise after the connection wire of the described film of described plating: remove described titanium/copper seed layer.
5. thermosensitive film according to claim 1 and method for manufacturing lead thereof, is characterized in that, described by described PI adhesive tape from glass substrate release after also comprise: at surface deposition Parylene protective layer.
6. the thermosensitive film according to any one of claim 1 to 5 and method for manufacturing lead thereof, is characterized in that, described PI adhesive tape is the organic pressure-sensitive silica gel of polyimide film tape.
7. the thermosensitive film according to any one of claim 1 to 5 and method for manufacturing lead thereof, is characterized in that, is specially by described PI adhesive tape: utilize toluene to be discharged from glass substrate by described PI adhesive tape from glass substrate release.
8. the thermosensitive film according to any one of claim 4 to 5 and method for manufacturing lead thereof, is characterized in that, removes described titanium/copper seed layer and be specially: utilize sulfuric acid and sulfuric acid to add hydrogen peroxide solution and remove described titanium/copper seed layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410689647.XA CN104760919A (en) | 2014-11-26 | 2014-11-26 | Method for manufacturing thermal sensitive thin film and thermal sensitive thin film lead |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410689647.XA CN104760919A (en) | 2014-11-26 | 2014-11-26 | Method for manufacturing thermal sensitive thin film and thermal sensitive thin film lead |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104760919A true CN104760919A (en) | 2015-07-08 |
Family
ID=53643091
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410689647.XA Pending CN104760919A (en) | 2014-11-26 | 2014-11-26 | Method for manufacturing thermal sensitive thin film and thermal sensitive thin film lead |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104760919A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105277586A (en) * | 2015-07-13 | 2016-01-27 | 西华大学 | Minisize air chamber of thermal conductance sensor |
| CN106799538A (en) * | 2016-12-09 | 2017-06-06 | 上海交通大学 | A kind of hot pressing connects method of flexible soft arranging wire and Parylene flexible electrode |
| CN108515713A (en) * | 2018-03-12 | 2018-09-11 | 西北工业大学 | A kind of NTC powders and graphene composite plane thermosensitive film preparation method |
| CN111435616A (en) * | 2019-01-14 | 2020-07-21 | 光颉科技股份有限公司 | Flexible resistor element and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009267248A (en) * | 2008-04-28 | 2009-11-12 | Oki Semiconductor Co Ltd | Thin film resistor element and manufacturing method of the same |
| CN102165538A (en) * | 2008-09-05 | 2011-08-24 | 韦沙戴尔电子公司 | Resistor and method for making same |
| CN103050204A (en) * | 2012-12-19 | 2013-04-17 | 中国振华集团云科电子有限公司 | Method for manufacturing chip-type linear positive temperature coefficient thermistor |
-
2014
- 2014-11-26 CN CN201410689647.XA patent/CN104760919A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009267248A (en) * | 2008-04-28 | 2009-11-12 | Oki Semiconductor Co Ltd | Thin film resistor element and manufacturing method of the same |
| CN102165538A (en) * | 2008-09-05 | 2011-08-24 | 韦沙戴尔电子公司 | Resistor and method for making same |
| CN103050204A (en) * | 2012-12-19 | 2013-04-17 | 中国振华集团云科电子有限公司 | Method for manufacturing chip-type linear positive temperature coefficient thermistor |
Non-Patent Citations (2)
| Title |
|---|
| 徐成祥: "热剪切应力传感器的研究", 《中国优秀硕士学位论文全文数据库信息科技辑》, no. 1, 15 January 2014 (2014-01-15) * |
| 王文君: "悬空结构的微型柔性热剪切应力传感器阵列研究", 《中国优秀硕士学位论文全文数据库信息科技辑》, 15 July 2012 (2012-07-15) * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105277586A (en) * | 2015-07-13 | 2016-01-27 | 西华大学 | Minisize air chamber of thermal conductance sensor |
| CN106799538A (en) * | 2016-12-09 | 2017-06-06 | 上海交通大学 | A kind of hot pressing connects method of flexible soft arranging wire and Parylene flexible electrode |
| CN106799538B (en) * | 2016-12-09 | 2019-11-01 | 上海交通大学 | A kind of hot pressing connects method of flexibility soft arranging wire and Parylene flexible electrode |
| CN108515713A (en) * | 2018-03-12 | 2018-09-11 | 西北工业大学 | A kind of NTC powders and graphene composite plane thermosensitive film preparation method |
| CN108515713B (en) * | 2018-03-12 | 2019-07-19 | 西北工业大学 | A kind of NTC powder and graphene composite plane thermosensitive film preparation method |
| CN111435616A (en) * | 2019-01-14 | 2020-07-21 | 光颉科技股份有限公司 | Flexible resistor element and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101950644B (en) | Manufacturing method of flexible heat-sensitive thin film resistor array | |
| CN104760919A (en) | Method for manufacturing thermal sensitive thin film and thermal sensitive thin film lead | |
| JP4104964B2 (en) | MASK FOR FORMING THIN FILM PATTERN OF LAMINATED STRUCTURE COMPRISING PATTERNED MASK COATING AND SUPPORT AND METHOD FOR PRODUCING THE SAME | |
| CN110422822B (en) | Transfer printing method for manufacturing three-layer structure dry electrode | |
| CN105826231B (en) | The graphic plating method of two kinds of sheet resistance thin film circuits is integrated on dielectric substrate same plane | |
| CN108398860A (en) | A kind of stripping means of semiconductor laser chip metal | |
| WO2019172123A1 (en) | Wiring substrate and method for producing same | |
| CN107164788A (en) | Mask plate and preparation method thereof | |
| Biswas et al. | 3D metamorphic stretchable microphone arrays | |
| CN110364283B (en) | Flexible conductive film based on silver powder and PDMS (polydimethylsiloxane) and preparation method thereof | |
| CN109166847B (en) | Flexible electronic device and its manufacturing method | |
| CN109216188A (en) | Flexible interconnection line and its manufacturing method and measurement method of parameters | |
| CN109179312A (en) | A kind of preparation method of pattern metal film | |
| KR102013283B1 (en) | Method of detaching a thin film electrode using thermal expansion coefficient | |
| US11543307B1 (en) | Sensor with controllable adhesion and preparation method thereof | |
| US20170267899A1 (en) | Electrically conductive adhesive tapes | |
| JP3339387B2 (en) | Method for manufacturing TAB tape | |
| TWI816902B (en) | Manufacturing method of component connector | |
| JPS61190333A (en) | Non-photosensitive transfer resist | |
| TWI710292B (en) | Circuit board and method for making the same | |
| JP2010040693A (en) | Method for forming pattern | |
| Kang et al. | Hybrid patterning of metal nanowire/polymer composites based on selective photocuring-and-transfer and kirigami cutting techniques for stretchable circuit application | |
| JP2009177022A (en) | Plating film, method for manufacturing plating film, wiring board, and method for manufacturing wiring board | |
| CN114283994B (en) | Embedded metal grid flexible electrode film and preparation method and application thereof | |
| WO2024202761A1 (en) | Resin wiring board and stretchable device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150708 |