CN116997068A - Plasma generator for magnetron sputtering coating and magnetron sputtering coating machine - Google Patents
Plasma generator for magnetron sputtering coating and magnetron sputtering coating machine Download PDFInfo
- Publication number
- CN116997068A CN116997068A CN202311236523.1A CN202311236523A CN116997068A CN 116997068 A CN116997068 A CN 116997068A CN 202311236523 A CN202311236523 A CN 202311236523A CN 116997068 A CN116997068 A CN 116997068A
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- CN
- China
- Prior art keywords
- magnetron sputtering
- coil
- sputtering coating
- plasma generator
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011248 coating agent Substances 0.000 title claims abstract description 61
- 238000000576 coating method Methods 0.000 title claims abstract description 61
- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 39
- 230000005284 excitation Effects 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 3
- 230000005855 radiation Effects 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 5
- 230000002411 adverse Effects 0.000 abstract description 4
- 210000002381 plasma Anatomy 0.000 description 50
- 238000009616 inductively coupled plasma Methods 0.000 description 23
- 239000010408 film Substances 0.000 description 9
- 238000009434 installation Methods 0.000 description 9
- 238000007747 plating Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000008358 core component Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a plasma generator for magnetron sputtering coating and a magnetron sputtering coating machine. The magnetron sputtering coating machine comprises a coating chamber, wherein the plasma generator for magnetron sputtering coating is arranged in the coating chamber. The plasma generator for magnetron sputtering coating and the magnetron sputtering coating machine have the advantages of reducing adverse effect of heat radiation on coating quality and improving coating uniformity.
Description
Technical Field
The invention relates to the technical field of magnetron sputtering coating, in particular to a plasma generator for magnetron sputtering coating and a magnetron sputtering coating machine.
Background
The plasma generator is a core component in magnetron sputtering coating equipment, is an ICP inductively coupled plasma, is a common type of plasma generator in the field, and generates a high-frequency electromagnetic field through an induction coil by high-frequency current, so that a working gas is ionized into a large amount of ions and electrons to form plasma.
The chinese patent publication No. CN110318028A discloses a plasma source mechanism and a thin film forming apparatus, the plasma source mechanism is applicable to a thin film forming apparatus having a vacuum ring, and the thin film forming apparatus includes a housing mounted outside the vacuum ring, and a coil assembly located in the housing, wherein a disk surface of a coil of the thin film forming apparatus is directly oriented to a film plating workpiece, and is relatively close to the film plating workpiece, resulting in poor uniformity of plasma distribution, and a large amount of heat radiation generated during operation of the coil affects quality of magnetron sputtering film plating; meanwhile, the coil assembly is positioned in a non-vacuum environment, so that the phenomenon of ignition is easy to occur in actual application, and the operation safety of equipment and the quality of magnetron sputtering coating are affected.
Disclosure of Invention
The invention aims to solve the technical problem of overcoming the defects of the prior art and providing a plasma generator and a magnetron sputtering coating machine for magnetron sputtering coating, which can reduce adverse effect of heat radiation on coating quality and improve coating uniformity.
In order to solve the technical problems, the invention adopts the following technical scheme:
the utility model provides a plasma generator for magnetron sputtering coating film, includes casing and ICP coil, the casing is equipped with coil installation cavity and plasma excitation groove, the coil installation cavity sets up around the plasma excitation groove, the ICP coil is installed in the coil installation cavity.
As a further improvement of the above technical scheme:
the coil installation cavity is provided with a vacuumizing interface, and the vacuumizing interface is connected with vacuumizing equipment.
The coil mounting cavity is an annular cavity and the ICP coil is an integral coil circumferentially arranged within the coil mounting cavity.
The ICP coils are provided with a plurality of groups, and the ICP coils are symmetrically arranged in coil mounting cavities at two sides of the plasma excitation groove.
And a quartz glass cover for isolation is arranged between the coil mounting cavity and the plasma excitation groove.
The coil mounting cavity is provided with a sealing joint for mounting an electrode lead, and the electrode lead is electrically connected with the ICP coil.
The opening of the plasma excitation groove faces to the direction of the coating substrate.
The magnetron sputtering coating machine comprises a coating chamber, wherein the plasma generator for magnetron sputtering coating is arranged in the coating chamber.
Compared with the prior art, the invention has the advantages that:
the plasma generator for magnetron sputtering coating provided by the invention is provided with the coil mounting cavity which is arranged around the plasma excitation groove, when the ICP coil arranged in the coil mounting cavity is started, a large amount of plasmas are excited in the plasma excitation groove, and the plasma excitation groove provides a sufficient and repeated collision space for a large amount of plasmas, so that the plasmas emitted from the plasma excitation groove are more uniformly dispersed, and support is provided for improving the uniformity of coating; meanwhile, the ICP coil with the structure does not directly face the coating substrate any more, but faces the plasma excitation groove, and heat radiation generated during starting of the ICP coil does not directly act on the coating substrate any more, so that adverse effects of the heat radiation on coating quality are greatly reduced. The magnetron sputtering coating machine has the plasma generator for magnetron sputtering coating, so that the magnetron sputtering coating machine has corresponding technical effects and is not repeated herein.
Drawings
Fig. 1 is a schematic front view of a plasma generator according to embodiment 1 of the present invention.
Fig. 2 is a schematic side view of the structure of embodiment 1 of the plasma generator of the present invention.
Fig. 3 is a section A-A of fig. 1.
Fig. 4 is a sectional view of B-B of fig. 1.
Fig. 5 is a schematic diagram showing a front view of a plasma generator according to embodiment 2 of the present invention.
Fig. 6 is a schematic side view of embodiment 2 of the plasma generator of the present invention.
Fig. 7 is a sectional view of fig. 1 taken along line C-C.
Fig. 8 is a sectional view D-D of fig. 1.
FIG. 9 is a schematic diagram of a magnetron sputtering coater embodiment of the invention.
The reference numerals in the drawings denote:
1. a housing; 11. a coil mounting cavity; 111. a vacuumizing interface; 112. sealing the joint; 12. a plasma excitation tank; 13. a quartz glass cover; 2. an ICP coil; 100. a film plating chamber; 200. a plasma generator.
Detailed Description
The invention will be described in further detail with reference to the drawings and the specific examples.
Plasma generator example 1:
as shown in fig. 1 to 4, the plasma generator for magnetron sputtering coating of the present embodiment includes a housing 1 and an ICP coil 2, the housing 1 is provided with a coil installation cavity 11 and a plasma excitation tank 12, the coil installation cavity 11 is disposed around the plasma excitation tank 12, the ICP coil 2 is installed in the coil installation cavity 11, and an opening of the plasma excitation tank 12 faces a direction in which a coating substrate is located. When the ICP coil 2 is started, a large amount of plasmas are excited in the plasma excitation groove 12, and the plasma excitation groove 12 provides a sufficient and repeated collision space for a large amount of plasmas, so that the plasmas emitted from the plasma excitation groove 12 are more uniformly dispersed, and support is provided for improving the uniformity of coating films; meanwhile, the ICP coil 2 with the structure does not directly face the coating substrate any more, but faces the plasma excitation groove 12, and heat radiation generated during starting of the ICP coil 2 does not directly act on the coating substrate any more, so that adverse effects of the heat radiation on coating quality are greatly reduced.
In this embodiment, the coil mounting cavity 11 is provided with the vacuumizing interface 111, the vacuumizing interface 111 is connected with a vacuumizing device, and the vacuumizing device and the vacuumizing interface 111 are used for vacuumizing the coil mounting cavity 11, so that the working environment of the ICP coil 2 can be optimized, and the phenomenon of "sparking" during the operation of the ICP coil 2 is prevented.
In this embodiment, the coil installation cavity 11 is an annular cavity, the ICP coil 2 is an integral coil circumferentially arranged in the coil installation cavity 11, and the integral coil is structured to have a more uniform excitation energy distribution for the plasma excitation tank 12, so that the quality of the coating film on the coating film substrate, especially the uniformity and consistency of the film layer, can be effectively improved.
In the embodiment, a quartz glass cover 13 for isolation is arranged between the coil mounting cavity 11 and the plasma excitation tank 12; the coil mounting chamber 11 is provided with a sealing joint 112 for mounting electrode leads electrically connected to the ICP coil 2, and the quartz glass cover 13 and the sealing joint 112 provide advantageous vacuuming conditions for the coil mounting chamber 11 while exerting their basic functions.
Plasma generator example 2:
as shown in fig. 5 to 8, in this embodiment, the difference is that, basically, the same as the previous embodiment is that: the ICP coils 2 are provided with a plurality of groups, and the ICP coils 2 are symmetrically arranged in the coil mounting cavities 11 at two sides of the plasma excitation groove 12.
Magnetron sputtering coater embodiment:
as shown in fig. 9, the magnetron sputtering coating machine of the present embodiment includes a coating chamber 100, and a plasma generator 200 for magnetron sputtering coating as described in the plasma generator embodiment 1 is provided in the coating chamber 100.
While the invention has been described in terms of preferred embodiments, it is not intended to be limiting. Many possible variations and modifications of the disclosed technology can be made by anyone skilled in the art, or equivalent embodiments with equivalent variations can be made, without departing from the scope of the invention. Therefore, any simple modification, equivalent variation and modification of the above embodiments according to the technical substance of the present invention shall fall within the scope of the technical solution of the present invention.
Claims (8)
1. The utility model provides a plasma generator for magnetron sputtering coating film, includes casing (1) and ICP coil (2), its characterized in that: the ICP coil (2) is arranged in the coil mounting cavity (11).
2. The plasma generator for magnetron sputtering coating according to claim 1, wherein: the coil mounting cavity (11) is provided with a vacuumizing interface (111), and the vacuumizing interface (111) is connected with vacuumizing equipment.
3. The plasma generator for magnetron sputtering coating according to claim 2, wherein: the coil mounting cavity (11) is an annular cavity, and the ICP coil (2) is an integral coil circumferentially arranged in the coil mounting cavity (11).
4. The plasma generator for magnetron sputtering coating according to claim 2, wherein: the ICP coil (2) is provided with a plurality of groups, and the ICP coil (2) is symmetrically arranged in coil mounting cavities (11) at two sides of the plasma excitation groove (12).
5. The plasma generator for magnetron sputtering coating as claimed in any one of claims 1 to 4, wherein: a quartz glass cover (13) for isolation is arranged between the coil mounting cavity (11) and the plasma excitation groove (12).
6. The plasma generator for magnetron sputtering coating according to claim 5, wherein: the coil mounting cavity (11) is provided with a sealing joint (112) for mounting an electrode lead, which is electrically connected with the ICP coil (2).
7. The plasma generator for magnetron sputtering coating according to claim 6, wherein: the opening of the plasma excitation groove (12) faces the direction of the coating substrate.
8. Magnetron sputtering coating machine comprising a coating chamber (100), characterized in that a plasma generator (200) for magnetron sputtering coating as claimed in claims 1 to 7 is provided in the coating chamber (100).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311236523.1A CN116997068B (en) | 2023-09-25 | 2023-09-25 | Plasma generator for magnetron sputtering coating and magnetron sputtering coating machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311236523.1A CN116997068B (en) | 2023-09-25 | 2023-09-25 | Plasma generator for magnetron sputtering coating and magnetron sputtering coating machine |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116997068A true CN116997068A (en) | 2023-11-03 |
| CN116997068B CN116997068B (en) | 2023-12-26 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311236523.1A Active CN116997068B (en) | 2023-09-25 | 2023-09-25 | Plasma generator for magnetron sputtering coating and magnetron sputtering coating machine |
Country Status (1)
| Country | Link |
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| CN (1) | CN116997068B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6368469B1 (en) * | 1996-05-09 | 2002-04-09 | Applied Materials, Inc. | Coils for generating a plasma and for sputtering |
| US20100156300A1 (en) * | 2008-12-23 | 2010-06-24 | Industrial Technology Research Institute | Plasma excitation module |
| CN105470088A (en) * | 2014-09-30 | 2016-04-06 | 株式会社思可林集团 | Plasma processing apparatus and plasma processing method |
| CN112899662A (en) * | 2019-12-04 | 2021-06-04 | 江苏菲沃泰纳米科技股份有限公司 | DLC production apparatus and production method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103866257B (en) * | 2014-03-31 | 2016-01-27 | 苏州大学 | A kind of preparation method of three frequency high density plasma aid magnetron sputtering films |
| CN104505326A (en) * | 2014-12-19 | 2015-04-08 | 中国科学院嘉兴微电子仪器与设备工程中心 | Chamber structure applied to plasma equipment and plasma equipment |
| CN214782134U (en) * | 2021-02-01 | 2021-11-19 | 江苏菲沃泰纳米科技股份有限公司 | Plasma coating equipment and radio frequency discharge device |
| CN114833045B (en) * | 2021-02-01 | 2023-07-25 | 江苏菲沃泰纳米科技股份有限公司 | PECVD coating system and coating method |
| CN114845453A (en) * | 2021-02-01 | 2022-08-02 | 江苏菲沃泰纳米科技股份有限公司 | ICP reaction device and ICP generator |
-
2023
- 2023-09-25 CN CN202311236523.1A patent/CN116997068B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6368469B1 (en) * | 1996-05-09 | 2002-04-09 | Applied Materials, Inc. | Coils for generating a plasma and for sputtering |
| US20100156300A1 (en) * | 2008-12-23 | 2010-06-24 | Industrial Technology Research Institute | Plasma excitation module |
| CN105470088A (en) * | 2014-09-30 | 2016-04-06 | 株式会社思可林集团 | Plasma processing apparatus and plasma processing method |
| CN112899662A (en) * | 2019-12-04 | 2021-06-04 | 江苏菲沃泰纳米科技股份有限公司 | DLC production apparatus and production method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116997068B (en) | 2023-12-26 |
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