CN214782134U - Plasma coating equipment and radio frequency discharge device - Google Patents

Plasma coating equipment and radio frequency discharge device Download PDF

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Publication number
CN214782134U
CN214782134U CN202120288592.7U CN202120288592U CN214782134U CN 214782134 U CN214782134 U CN 214782134U CN 202120288592 U CN202120288592 U CN 202120288592U CN 214782134 U CN214782134 U CN 214782134U
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coating
chamber
plasma
mounting
housing
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CN202120288592.7U
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Chinese (zh)
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宗坚
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Jiangsu Favored Nanotechnology Co Ltd
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Jiangsu Favored Nanotechnology Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)

Abstract

The utility model provides a plasma coating equipment and radio frequency discharge device, wherein plasma coating equipment includes a discharge coil and a coating cavity, discharge coil is switched on in a radio frequency power supply and is arranged in one side of coating cavity, and discharge coil is through certain design, so that plasma coating equipment can prepare the better rete of performance.

Description

Plasma coating equipment and radio frequency discharge device
Technical Field
The utility model relates to plasma coating field especially involves a plasma coating equipment and radio frequency discharge device.
Background
Plasma reaction equipment is widely used in thin film deposition, etching, and surface treatment processes. The plasma reaction apparatus may be classified into a capacitively coupled plasma reaction apparatus and an inductively coupled plasma reaction apparatus based on the difference of the inductively coupled element. At present, the capacitive coupling plasma reaction equipment adopts a flat capacitive coupling element, is limited to the capacitive coupling element, has low density of plasma generated by the capacitive coupling plasma reaction equipment, and simultaneously, the surface of a base material is easy to be bombarded by active particles due to high potential of the capacitive coupling plasma, so the quality of base material processing and surface modification is difficult to ensure.
Inductively Coupled Plasma (ICP) is a low temperature, high density Plasma source that discharges radio frequency through an inductive coil. The inductively coupled plasma reaction equipment adopting the inductively coupled coil provides an excitation magnetic field towards the reaction chamber under the driving of the radio frequency power supply, so that the reaction gas is ionized to form plasma. For the inductively coupled plasma reaction equipment, an inductive coupling coil is the technical core, and the design of the inductive coupling coil is directly related to the performance and effect of the plasma reaction device. In addition, in the inductively coupled plasma reaction equipment, the plasma generated by ICP and an inductance coil have an electrostatic coupling effect, so that high-energy ions in the plasma are easy to sputter on the coil and a discharge device, the uniformity and stability of ICP discharge are damaged, and the plasma density is reduced.
SUMMERY OF THE UTILITY MODEL
An advantage of the present invention is to provide a plasma coating apparatus and a radio frequency discharge device, wherein the radio frequency discharge device is disposed in a setting position of a coating cavity of the plasma coating apparatus, so that the plasma coating apparatus can prepare a film layer with excellent performance.
An advantage of the present invention is to provide a plasma coating apparatus and a radio frequency discharge device, wherein the radio frequency discharge device includes a discharge coil, wherein the discharge coil is arranged in the setting position of the coating cavity to the ionized reaction gas forms plasma, and plasma distributes evenly, so as to be favorable to the homogeneity of rete.
An advantage of the present invention is to provide a plasma coating apparatus and a radio frequency discharge device, wherein the radio frequency discharge device the discharge coil has a simple structural design, a small inductance, a small occupied discharge space, and a favorable overall discharge performance of the radio frequency discharge device.
One advantage of the present invention is to provide a plasma coating apparatus and a radio frequency discharge device, wherein the plasma coating apparatus can be used to prepare a variety of functional coatings.
An advantage of the present invention is to provide a plasma coating equipment and radio frequency discharge device, wherein the plasma coating equipment the discharge coil is designed as a planar coil and is placed in the plasma coating equipment, the discharge coil simple structure, inductance value is little, occupies discharge space small, can effectively restrain the electrostatic coupling effect.
An advantage of the present invention is to provide a plasma coating apparatus and a radio frequency discharge device, wherein the discharge coil is designed as a three-dimensional structure and is externally disposed on the plasma coating apparatus.
According to an aspect of the present invention, the utility model provides a plasma coating equipment is suitable for at least a sample coating film, wherein plasma coating equipment includes:
the film coating cavity is provided with a film coating cavity;
at least one discharge coil, and
a radio frequency power supply, the coating chamber having a coating top wall, a coating bottom wall and a coating side wall, wherein the coating side wall extends between the coating top wall and the coating bottom wall, and the discharge coil is disposed at a side of the coating side wall of the coating chamber, such that after the sample is placed in the coating chamber, the discharge coil conductively connected to the radio frequency power supply discharges from a side of the sample toward the sample to provide a plasma coating environment.
According to one embodiment of the invention, the discharge coil is designed as a planar structure and comprises a plurality of line sections of the same structure but different sizes, a plurality of said line sections being nested into one another.
According to an embodiment of the invention, the discharge coil is designed as a planar structure and arranged to rotate outwards from a starting point located at an intermediate position forming a multi-turn helical structure.
According to an embodiment of the invention, each of said turns of said discharge coil is arranged to have a rectangular profile.
According to an embodiment of the present invention, the plasma coating apparatus further comprises at least one mounting housing, wherein the mounting housing is disposed between the coating chamber and the discharge coil and protrudes outward to form a cup-shaped structure, wherein the discharge coil is wound around the mounting housing.
According to the utility model discloses an embodiment, plasma coating equipment further includes a holding casing and has a holding chamber, the holding casing is set up to certainly the coating film cavity at least part of coating film lateral wall outwards protrudes to extend and forms and form the holding chamber, the holding chamber be communicate in the coating film chamber and the coating film lateral wall forms a holding accent in holding chamber.
According to the utility model discloses an embodiment, plasma coating equipment further includes a holding casing and has a holding chamber, the holding casing is set up to certainly the coating film cavity at least part of coating film lateral wall outwards protrudes to extend and forms and form the holding chamber, the holding chamber be communicate in the coating film chamber and the coating film lateral wall forms a holding accent in holding chamber.
According to an embodiment of the utility model, discharge coil is set up in the coating film cavity and be close to in the holding chamber the holding accent position is arranged.
According to an embodiment of the utility model, discharge coil set up in the coating film cavity is outside and be located the holding casing outside, the installation casing set up in the holding casing works as discharge coil is switched on, and its magnetic field that produces passes through earlier the installation casing, then passes through reach behind the holding chamber the coating film chamber.
According to an embodiment of the present invention, the mounting housing has a mounting housing top wall and a mounting housing wall extending outwards from the mounting housing top wall periphery and formed with a mounting cavity, the mounting cavity communicates with the accommodating cavity, and the discharge coil is wound around the mounting housing wall, wherein the plasma coating device has a feed inlet and the feed inlet is provided in the mounting housing top wall.
According to an embodiment of the present invention, the number of the discharge coils is two, each of the discharge coils corresponds to one of the mounting cases and the discharge coils are connected in series.
According to an embodiment of the utility model, plasma coating equipment has a feed inlet, the feed inlet be set up in the coating film cavity coating film lateral wall one side.
According to an embodiment of the present invention, the plasma coating apparatus further comprises a holder and a bias power supply, wherein the holder is disposed in the coating chamber of the coating chamber and is conductively connected to the bias power supply so that at least a portion of the holder is used as an electrode of the bias power supply.
According to another aspect of the present invention, the present invention provides a plasma coating apparatus, wherein the plasma coating apparatus comprises:
the film coating cavity is provided with a film coating cavity;
at least one discharge coil;
at least one mounting housing, and
a radio frequency power supply, wherein the discharge coil is conductively connected to the radio frequency power supply, wherein the mounting housing is disposed outside the coating chamber and includes a mounting housing top wall and a mounting housing peripheral wall, and the mounting housing peripheral wall is disposed to extend from the periphery of the mounting housing top wall toward the coating chamber to form a mounting cavity in a surrounding manner, the mounting cavity is communicated with the coating chamber, wherein the discharge coil is disposed on the mounting housing peripheral wall, and when the discharge coil is conducted, the magnetic field generated by the discharge coil firstly passes through the mounting housing and then reaches the coating chamber.
According to an embodiment of the present invention, the plasma coating apparatus has a feed inlet, the feed inlet is provided in the mounting case on the mounting case top wall.
According to an embodiment of the present invention, the mounting housing is configured as a cup structure.
According to an embodiment of the present invention, the number of the mounting housings and the number of the discharge coils are two, respectively, two the discharge coils are connected in series with each other and the mounting housings are symmetrically arranged at one side of the coating chamber.
According to another aspect of the present invention, the utility model provides a radio frequency discharge device is suitable for being installed in a coating cavity of a plasma coating equipment, wherein radio frequency discharge device includes:
at least one mounting housing; and
at least one discharge coil; and
a radio frequency power supply, wherein the discharge coil is conductively connected to the radio frequency power supply, wherein the mounting housing comprises a mounting housing top wall and a mounting housing surrounding wall, and the mounting housing surrounding wall is configured to extend from the periphery of the mounting housing top wall towards the coating cavity to form a mounting cavity in a surrounding manner, the mounting cavity is communicated with the coating cavity, wherein the discharge coil is configured on the mounting housing surrounding wall, and when the discharge coil is conducted, the magnetic field generated by the discharge coil firstly passes through the mounting housing and then reaches the coating cavity.
Drawings
Fig. 1A is a schematic view of a plasma coating apparatus according to a preferred embodiment of the present invention.
Fig. 1B is a schematic perspective view of the plasma coating apparatus according to the above preferred embodiment of the present invention.
Fig. 1C is a schematic partial cross-sectional view of the plasma coating apparatus according to the above preferred embodiment of the present invention.
Fig. 2A is a partial schematic view of a coating chamber of the plasma coating apparatus according to the above preferred embodiment of the present invention.
Fig. 2B is a schematic cross-sectional view of a part of the plasma coating apparatus according to the above preferred embodiment of the present invention.
Fig. 3 is a partial schematic view of another embodiment of the plasma coating apparatus according to the above preferred embodiment of the present invention.
Fig. 4 is a partial schematic view of another embodiment of the plasma coating apparatus according to the above preferred embodiment of the present invention.
Fig. 5A is a schematic view of the plasma coating apparatus according to another preferred embodiment of the present invention.
Fig. 5B is a schematic partial cross-sectional view of the plasma coating apparatus according to the above preferred embodiment of the present invention.
Fig. 6 is a schematic view of the plasma coating apparatus according to another preferred embodiment of the present invention.
Fig. 7 is a schematic view of the plasma coating apparatus according to another preferred embodiment of the present invention.
Fig. 8 is a schematic view of the plasma coating apparatus according to another preferred embodiment of the present invention.
Detailed Description
The following description is presented to disclose the invention so as to enable any person skilled in the art to practice the invention. The preferred embodiments in the following description are given by way of example only, and other obvious variations will occur to those skilled in the art. The basic principles of the invention, as defined in the following description, may be applied to other embodiments, variations, modifications, equivalents and other technical solutions without departing from the spirit and scope of the invention.
It will be understood by those skilled in the art that in the present disclosure, the terms "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in a generic and descriptive sense only and not for purposes of limitation, as the terms are used in the description to indicate that the referenced device or element must have the specified orientation, be constructed and operated in the specified orientation, and not for the purpose of limitation.
It is understood that the terms "a" and "an" should be interpreted as meaning that a number of one element or element is one in one embodiment, while a number of other elements is one in another embodiment, and the terms "a" and "an" should not be interpreted as limiting the number.
Referring to fig. 1A to 2B, a plasma coating apparatus and an rf discharge device 20 according to a preferred embodiment of the present invention are illustrated.
The plasma coating equipment comprises a coating cavity 10, at least one radio frequency discharge device 20, a feeding device 30 and an air extracting device 40, wherein the coating cavity 10 is provided with a coating cavity 100, the feeding device 30 is communicably connected to the coating cavity 100 of the coating cavity 10 to supply raw materials to the coating cavity 100, the radio frequency discharge device 20 is used for providing an electric field to the coating cavity 100 of the coating cavity 10 to ionize reaction gases into plasma, the air extracting device 40 is communicably connected to the coating cavity 100 of the coating cavity 10, and the air extracting device 40 is used for controlling the vacuum degree of the coating cavity 100 in the coating cavity 10 to control the vacuum degree of the coating cavity 100 within a certain range.
The radio frequency discharge device 20 comprises a discharge coil 21 and a radio frequency power supply 22, wherein the discharge coil 21 is arranged at the position of the coating chamber 10, and the radio frequency power supply 22 is conductively connected to the discharge coil 21 and is positioned outside the coating chamber 10.
The plasma coating device is adapted to coat at least one sample, which may be placed in the coating chamber 100 of the coating chamber 10. The discharge coil 21 is arranged on one side of the sample to provide an electric field environment for the coating chamber 10. In detail, the coating chamber 10 has a coating sidewall 11, a coating top wall 12 and a coating bottom wall 13, wherein the coating sidewall 11 extends between the coating top wall 12 and the coating bottom wall 13, and the discharge coil 21 is disposed at one side of the coating sidewall 11 of the coating chamber 10.
The rf discharge device 20 may further include an rf electrode 23, an internal conductive connector 24, an external conductive connector 25, and an adaptor 26, wherein the rf electrode 23 and the discharge coil 21 are respectively disposed at both sides of the receiving cavity 500. The radio frequency electrode 23 is positioned outside the coating cavity 10, and the discharge coil 21 is positioned in the coating cavity 10. The internal conductive connector 24 connects the rf electrode 23 to the discharge coil 21, the external conductive connector 25 connects the rf electrode 23 and the adapter 26, the adapter 26 is conductively connected to the rf power source 22, and the adapter 26 and the rf power source 22 are respectively disposed outside the coating chamber 10.
The rf power source 22 may form a closed loop with the discharge coil 21 via the matching device 26, and the matching device 26 may perform a regulation function, so that the power of the rf power source 22 may be transmitted to both ends of the discharge coil 21 to the maximum extent. The discharge coil 21 will generate a certain amount of radio frequency current, and both ends will generate a certain voltage. The radio frequency current surrounding in the discharge coil 21 is excited in the space where the discharge coil 21 is located to generate a radio frequency magnetic field, so that the coating cavity 10 generates a magnetic flux. Based on faraday's law of electromagnetic induction, the rf magnetic flux generated by the discharge coil 21 of the rf discharge device 20 induces an rf electric field, which accelerates the movement of electrons in the plasma, causing them to collide with neutral gas molecules and ionize continuously, thereby coupling the rf energy in the induction coil into the ionized gas and maintaining the plasma discharge.
The plasma coating device further comprises a containing shell 50, wherein the radio-frequency electrode 23 and the internal conductive connecting piece 24 are arranged on the containing shell 50, the containing shell 50 surrounds to form the containing cavity 500, and the containing cavity 500 is communicated with the coating cavity 100. In other words, the filming side wall 11 of the filming cavity 10 is formed with an opening, and the accommodating shell 50 protrudes from the filming side wall 11 and is installed at the opening position. The opening of the coating sidewall 11 is a receiving cavity opening 501 of the receiving cavity 500, and the discharge coil 21 is disposed at the receiving cavity opening 501 and held at the receiving cavity opening 501 to be held at the side of the coating cavity 10. Notably, the discharge coil 21 is arranged adjacent to the coated side wall 11 of the coated chamber 10. For example, the plane of the discharge coil 21 and the plane of the coating sidewall 11 of the coating chamber 10 may be parallel to each other and keep a small distance. In this way, the discharge coil 21 can occupy a smaller spatial dimension to provide a larger coating space for the sample. In addition, since the discharge coil 21 can be arranged forward toward the sample to provide a large plasma environment for the sample as much as possible.
It is worth mentioning that, because the discharge coil 21 is built-in, compared with the traditional radio frequency discharge device in which a quartz medium is adopted to isolate the coil from the plasma chamber, the coupling efficiency of the radio frequency power can be improved, so that the plasma density is provided, the film deposition speed is improved, and the reaction rate is improved.
It is understood that the surface of the discharge coil 21 may be provided with an insulating material to reduce the bombardment effect of the positive ions in the plasma environment on the discharge coil 21, thereby reducing the influence of electrostatic coupling and facilitating to ensure the normal operation of the discharge coil 21. In other words, the discharge coil 21 can maintain normal operation as much as possible to ensure the density of the plasma in the coating chamber 10.
It is to be noted that in the present embodiment, the discharge coil 21 may be implemented as a hollow line tube, but it is understood that the discharge coil 21 may also be implemented as a solid line tube.
The external conductive connector 25 is adapted to connect the rf electrode 23 and the adaptor 26, and the external conductive connector 25 may be a flexible connector to adapt to the change of the external environment. The internal conductive connector 24 may be a hard connector that not only conducts the discharge coil 21 and the rf electrode 23, but also supports the discharge coil 21 at a predetermined height.
In addition, the rf discharge device 20 may be provided with an electrode holder 27, wherein the electrode holder 27 is disposed in the accommodating case 50, and the rf electrode 23 is adapted to be mounted on the electrode holder 27. The rf electrode 23 may be a metal electrode, such as copper, or may be made of other conductive materials.
Still further, in the present embodiment, the discharge coil 21 is arranged in a planar structure and includes a plurality of mutually connected line segments of the same structure but different sizes, which are nested one inside another and integrally extend to form a planar structure. The discharge coil 21 may be understood as extending outward from a point located at a central position by a plurality of turns, similar to a spiral structure, but it is noted that the discharge coil 21 in the present embodiment is implemented as a spiral structure of a rectangular structure, that is, each turn of the discharge coil 21 may be rectangular. Alternatively, the distance between each of the turns of the discharge coil 21 may be the same and rotated around the same center.
Further, the receiving cavity 500 of the receiving case 50 is configured to match the discharge coil 21, that is, the receiving cavity 500 is implemented as a chamber having a rectangular cross section. The coating chamber 10 may also be implemented as a rectangular structure to match the discharge coil 21.
The plasma coating equipment is provided with a feed inlet 101 and an exhaust port 102, wherein the feed inlet 101 is suitable for being communicated with the feed device 30, and the exhaust port 102 is suitable for being communicated with the exhaust device 40. The feed port 101 and the accommodating case 50 may be disposed at the same side of the coating chamber 10. In the present embodiment, the accommodating shell 50 is disposed at a middle position of the filming side wall 11 of the filming chamber 10, and the feeding inlet 101 is disposed at the filming side wall 11 and at the same side as the accommodating shell 50. The pumping hole 102 of the coating chamber 10 of the plasma coating apparatus is disposed on the coating top wall 12 of the coating chamber 10.
Further, the plasma coating apparatus comprises a pulse power source 60, wherein the pulse power source 60 is disposed outside the coating chamber 10, and the pulse power source 60 and the rf power source 22 can work together to provide a suitable plasma environment for the coating chamber 10. It is worth mentioning that the plasma coating equipment can complete coating at a low temperature of 30-50 ℃.
According to an embodiment of the present invention, the combined action of the rf electric field and the pulsed electric field is used to assist in the completion of the plasma enhanced chemical deposition process. Preferably, the rf and high voltage pulses are applied simultaneously to the PECVD deposition process. In the process of the combined action of the radio frequency and the high-voltage pulse, the plasma environment is maintained by using low-power radio frequency discharge, and arc discharge in the high-voltage discharge process is inhibited, so that the chemical deposition efficiency is improved.
The radio frequency can lead the whole film coating process to be in a plasma environment through discharging inert gases and reaction gas raw materials, and the reaction gas raw materials are in a high-energy state; the action of the pulse high voltage is that the pulse power supply generates a strong electric field in the discharging process, and the active particles in a high-energy state are accelerated to deposit on the surface of the substrate under the action of the strong electric field to form an amorphous carbon network structure. When the pulse electric field is in a non-discharge state, the DLC film deposited on the surface of the substrate is facilitated to carry out free relaxation of an amorphous carbon network structure, the carbon structure is converted to a stable phase-a bent graphene sheet layer structure under the thermodynamic action, and the carbon structure is embedded in the amorphous carbon network to form a transparent graphene-like structure. That is, the radio frequency electric field and the changed pulse electric field are combined with each other, so that the DLC film can be rapidly and stably deposited on the surface of the substrate.
The sample to be coated with the plasma coating apparatus may be made of glass, plastic, inorganic material or any other material having a surface to be coated or modified. The sample may be an electronic device and its accessories, for example but not limited to a smartphone, a tablet, an e-reader, a wearable device, a television, a computer display screen, a glass screen, a flexible screen.
Referring to fig. 3, another embodiment of the plasma coating apparatus according to the above preferred embodiment of the present invention is illustrated.
In this embodiment, the discharge coil 21 of the rf discharge device 20 of the plasma coating apparatus is disposed in the accommodating cavity 500, and the discharge coil 21 is disposed in a planar structure with multiple annular turns, so that the discharge coil 21 does not protrude, and further, the discharge coil 21 does not occupy too much space of the coating cavity 10, so as not to affect the placement of the sample in the coating cavity 10.
Referring to fig. 4, another embodiment of the discharge coil 21 of the plasma coating apparatus according to the above preferred embodiment of the present invention is illustrated.
In the present embodiment, at least a portion of the discharge coil 21 is implemented as a planar structure, and at least a portion is configured as a convex structure. The protruding structure extends along the axis direction, and the planar structure extends all around along the planar direction perpendicular to the axis. The flat portion of the discharge coil 21 may include one turn or several turns, and the protruding portion of the discharge coil 21 may include one turn or several turns.
Alternatively, the planar portion of the discharge coil 21 is nested by the same turns, may be coaxial and arranged symmetrically along the axis. The planar portion of the discharge coil 21 may be a spiral, an archimedean spiral, an involute or a spiral. The projecting portion of the discharge coil 21 may be spirally raised along the axis, and the diameter of the spiral may be the same, or may be reduced in diameter in the rising direction, or may be gradually increased in diameter in the rising direction.
Referring to fig. 5A, the plasma coating apparatus according to another preferred embodiment of the present invention is illustrated.
The plasma coating equipment comprises the coating cavity 10, the radio frequency discharge device 20, the feeding device 30 and the air extracting device 40. The coating chamber 10 includes the coating top wall 12, the coating bottom wall 13, and the coating side wall 11 and has the coating chamber 100.
The radio frequency discharging device 20 includes the discharging coil 21, the matcher 26, and the radio frequency power source 22.
The plasma coating apparatus may further include a receiving case 50, wherein the receiving case 50 is disposed on the coating sidewall 11 of the coating chamber 10 and protrudes outward from the coating sidewall 11. The receiving housing 50 is formed with a receiving cavity 500. The plasma coating apparatus may further include a mounting case 70, wherein the mounting case 70 is disposed between the coating chamber 100 of the coating chamber 10 and the discharge coil 21, and at least a portion or all of the mounting case 70 may be made of quartz or ceramic. The discharge coil 21 is disposed on the mounting housing 70 and wound around the mounting housing 70, and the mounting housing 70 can separate the discharge coil 21 from the coating chamber 10 to reduce interference of plasma in the coating chamber 10 with the operation of the discharge coil 21.
Specifically, the receiving housing 50 has at least one receiving opening 502, wherein the receiving opening 502 and the receiving cavity 501 are disposed opposite to each other. The mounting housing 70 is disposed at the receiving opening 502 of the receiving housing 50, and after the discharge coil 21 wound around the mounting housing 70 is conducted to the rf power source 22, the generated magnetic field passes through the mounting housing 70, then passes through the receiving cavity 500 of the receiving housing 50, and enters the coating cavity 100 of the coating cavity 10.
More specifically, the mounting housing 70 is formed to protrude outward from the position of the receiving opening 502 of the receiving housing 50, and the mounting housing 70 may be closely disposed to the receiving housing 50 to perform a sealing function. The mounting housing 70 may include a mounting housing top wall 71 and a mounting housing peripheral wall 72, the mounting housing peripheral wall 72 extends outward from the periphery of the mounting housing top wall 71 to the filming side wall 11 of the filming chamber 10, and the mounting housing peripheral wall 72 and the mounting housing top wall 71 surround a mounting cavity 700 forming the mounting housing 70. In the present embodiment, the mounting housing 70 is implemented as a cup-shaped structure which is closed at one end and communicated with the receiving chamber 500 at the other end.
The discharge coils 21 are wound around the mounting case surrounding wall 72 of the mounting case 70, and adjacent ones of the discharge coils 21 may be disposed with a space therebetween, and the spaces between adjacent two of the discharge coils 21 may be the same.
In the present embodiment, the number of the discharge coils 21 is set to two, corresponding to two of the mounting cases 70. Two of the mounting housings 70 are arranged at intervals in the accommodating housing 50. Alternatively, the two mounting cases 70 are symmetrically disposed on the accommodating case 50, and the accommodating case 50 may be located at a middle position of the film-coated sidewall 11, so that the two mounting cases 70 are symmetrically disposed on one side of the film-coated sidewall 11.
Further, two of the discharge coils 21 respectively disposed at the mounting housings 70 are arranged in series, and are respectively conductively connected to the radio frequency power source 22.
Further, the feed port 101 of the plasma coating apparatus may be disposed in the mounting housing 70 at the mounting housing top wall 71 of the mounting housing 70, for example, at a middle position of the mounting housing top wall 71. The discharge coil 21 is disposed around the reaction gas transferred from the position of the mounting case top wall 71 toward the filming chamber 10. It is understood that the number of the feed ports 101 may be two or more, and are respectively disposed in the mounting housing 70.
It is noted that the mounting housing enclosure walls 72 of the mounting housing 70 may be made of a dielectric material, such as quartz or ceramic, and the mounting housing top wall 71 may be made of a common material or a dielectric material as the mounting housing enclosure walls 72.
A plurality of the discharge coils 21 connected in series may be conducted to each other through a wire. It should be noted that the discharge coil 21 may be a solid wire or a hollow wire. If the discharge coil 21 is arranged to be hollow, the interior may be passed with a heat-dissipating fluid to function to assist heat dissipation of the discharge coil 21 during discharge of the discharge coil 21. According to an embodiment of the present invention, optionally, the discharge coil 21 may be a copper wire.
The number of the discharge coils 21 may be one, two, three or more, when the number of the discharge coils 21 is two, the discharge coils 21 are symmetrically arranged with respect to the plated sidewall 11, for example, the symmetric center of the two discharge coils 21 is also the symmetric center of the plated sidewall 11, and when the number of the discharge coils 21 is three, the three discharge coils 21 may be arranged in a triangular structure, and the symmetric center thereof may be the symmetric center of the plated sidewall 11.
The mounting housing 70 has an axis passing through the mounting housing top wall 71 of the mounting housing 70, and the discharge coil 21 is arranged around the axis of the mounting housing 70 to the mounting housing peripheral wall 72. It will be appreciated that the distance from the radial point on the mounting housing wall 72 to the axis may be the same, for example, the mounting housing wall 72 may be a cylindrical structure. In other words, the mounting housing enclosure wall 72 may be uniform in cross-section. Alternatively, the cross section of the mounting housing peripheral wall 72 may be set to be gradually reduced or gradually enlarged from the side close to the accommodating housing 50 toward the side of the mounting housing top wall 71, or alternately enlarged and reduced.
In other words, the mounting housing 70 may be a cup structure with a uniform inner diameter, a cup structure with a gradually enlarged caliber, or a cup structure with a gradually reduced caliber, for example, the mounting housing 70 may be a cone structure or an inverted cone structure.
Further, in the present embodiment, the mounting housing surrounding wall 72 of the mounting housing 70 is provided in a ring shape. Alternatively, the configuration of the mounting housing enclosure walls 72 of the mounting housing 70 is not limited thereto, and may be rectangular, triangular, or otherwise shaped.
Referring to fig. 6, the plasma coating apparatus according to another preferred embodiment of the present invention is illustrated.
In the present embodiment, the discharge coil 21 is still disposed on the side of the plating sidewall 11 of the plating chamber 10, but the discharge coil 21 includes two types of coils, one type of coil is disposed in the plating chamber 100 or the accommodating chamber 500 of the plating chamber 10, and one type of coil is disposed outside the plating chamber 10.
The discharge coil 21 disposed outside the coating chamber 10 and the discharge coil 21 disposed inside the coating chamber 10 may cooperate to ensure the plasma density of the coating chamber 100 of the coating chamber 10.
Referring to fig. 7, the plasma coating apparatus according to another preferred embodiment of the present invention is illustrated.
In this embodiment, the plasma coating apparatus further comprises a support 80, wherein the support 80 is disposed in the coating chamber 10 to support the sample at a predetermined height. In the present embodiment, the holder 80 is implemented as a rotatable holder, in other words, the holder 80 is rotatable with respect to the discharge coil 21. It is understood that the bracket 80 may also be a fixed bracket 80.
The holder 80 comprises a holder surrounding wall 81 and a holder seat 82, wherein the holder seat 82 supports the holder surrounding wall 81 on the coating chamber 10, the holder surrounding wall 81 is disposed around, and the sample is disposed on the holder surrounding wall 81 and between the holder surrounding wall 81 and the coating sidewall 11.
When the holder 80 is rotated, the sample can be rotated between the holder enclosure wall 81 and the discharge coil 21, and the discharge coil 21 can discharge directly toward the sample. Alternatively, the holder surrounding wall 81 may be a multi-sided cylindrical structure, for example, in the present embodiment, the holder surrounding wall 81 is implemented as an octahedral cylinder, so that at least the holder surrounding wall 81 can be rotated to face-to-face parallel with the discharge coil 21.
Further, at least a part of the holder wall 81 is conductively connected to the pulse power supply 60, so that at least a part of the holder wall 81 serves as an electrode of the pulse power supply 60, for example, the entire holder wall 81 can serve as a cathode. The holder enclosure wall 81 can be insulated from the coating chamber 10 so that the coating chamber 10 can be conductively connected to the pulse power supply 60 and serve as an anode of the pulse power supply 60.
Referring to fig. 8, the plasma coating apparatus according to another preferred embodiment of the present invention is illustrated.
In this embodiment, the plasma coating apparatus further comprises a support 80, wherein the support 80 is disposed in the coating chamber 10 to support the sample at a predetermined height. In the present embodiment, the bracket 80 is implemented as a fixed bracket. When the sample is coated, the discharge coil 21 can directly discharge toward the sample. In this embodiment, the support 80 is implemented as a multi-layered structure, and each layer may be hollowed out to facilitate the passage of plasma gas.
Further, at least a portion of the holder 80 is conductively connected to the pulse power source 60, such that at least a portion of the holder 80 serves as an electrode of the pulse power source 60, for example, the entire holder 80 can serve as a cathode. The holder 80 may be insulated from the filming chamber 10 so that the filming chamber 10 may be conductively connected to the pulse power supply 60 and serve as an anode of the pulse power supply 60. Alternatively, one layer of the support 80 may be conductively connected to the pulsed power supply 60 to serve as a cathode, and the adjacent layer may be conductively connected to the pulsed power supply 60 to serve as an anode, and the combined action of the rf electric field and the pulsed electric field may be used to assist in performing the plasma enhanced chemical deposition process in cooperation with the discharge of the discharge coil 21.
Furthermore, the plasma coating equipment can be used for preparing a super-hydrophobic film layer, and the maximum hydrophobic angle is more than 170. The transparent wear-resistant coating can be prepared by the plasma coating equipment, and the prepared film layer is free from scratches after being rubbed by dust-free cloth (loaded with 500g) for 10000 times.
According to another aspect of the present invention, the present invention provides a method for forming a film layer on a surface of a substrate, comprising the steps of:
(A) introducing a plasma source gas into a coating cavity 10 loaded with a substrate;
(B) turning on the radio frequency power supply 22 and the pulse power supply 60, and activating the plasma source gas to generate plasma;
(C) a gas mixture of a reaction gas raw material containing hydrocarbon gas and auxiliary gas flows into the coating cavity 10, and is deposited under the combined action of a pulse electric field and a radio frequency electric field to form a film layer; and
(D) and introducing air or inert gas to take out the substrate.
Specifically, the preparation method of the film layer may include the following processes:
cleaning and activating the surface of a sample in the step (1): putting the substrate after ultrasonic treatment in alcohol and acetone into a sample chamber, vacuumizing to 1.5 multiplied by 10-3And introducing a high-purity helium substrate in the plasma source gas for etching and cleaning below Pa. The radio frequency power supply 22 and the high voltage pulse power supply 60 are turned on, plasma is generated by glow discharge of plasma source gas, and etching cleaning and activation are carried out on the base material for 10 minutes. Namely, one embodiment of the steps (A) to (B).
Step (2) deposition film forming: after cleaning, preparing the transparent hard hydrogen-containing diamond-like carbon film by using a method of jointly assisting plasma chemical vapor deposition by using radio frequency and high-voltage pulses: and (3) introducing a hydrocarbon gas source as a reaction gas source, turning on the radio frequency power supply 22 and the high-voltage pulse power supply 60, or keeping the power supply in the step (1) in an on state, performing deposition, turning off after the film is deposited, releasing vacuum, and taking out the sample. Namely, one embodiment of the steps (C) to (D).
In the step (1), in the sample surface cleaning and activating stage, argon gas is introduced at a flow rate of 50sccm-200sccm, the pressure range of the reaction chamber 100 is controlled to be below 30mtorr, the voltage of the high-voltage pulse power supply 40 is controlled to be-1000V, the duty ratio is controlled to be 10%, and the cleaning time is controlled to be 10 min.
According to a specific embodiment of the present invention, a 6.5 inch quartz glass screen is selected as the substrate. As a precondition, the glass screen needs to be ultrasonically cleaned with absolute ethyl alcohol and acetone for 20min respectively, then is dried by nitrogen, is clamped in a vacuum chamber, and is pumped to 1.5 multiplied by 10 by the pressure in the chamber through a pumping-out system-3Introducing 100SCCM high-purity argon below Pa, opening a bias power supply (direct current pulse) and a radio frequency power supply, controlling the pressure of a chamber at 25mtorr, the voltage of the bias power supply at 500-. Next, a plating film was formed on the substrate as shown in each of examples and comparative examples described below.
First, as examples 1 to 3 and comparative examples 1 and 2, the plating gas was CH with a purity of 99.999%4And Ar in combination. The plating conditions (gas pressure, gas flow rate, power supply conditions, plating time) of examples 1 to 3 and comparative examples 1 and 2 are shown in table 2 below. In addition, table 2 also shows the properties (film thickness, hardness, light transmittance) of the film layers under different plating conditions.
The pressure of the chambers of the present series of examples was maintained at 25mtorr, and the examples were developed by setting different bias values. The examples as comparative examples were selected to use the bias power supply and the rf power supply separately.
Data can find out from the table and use the utility model discloses a coating device uses different bias voltage values all can obtain the excellent rete of performance, and film forming speed also is fit for industrial production, but the bias voltage value can lead to plasma to obtain energy not enough on the low side, and too high bias voltage has the sputtering effect to the substrate, can lead to deposition efficiency low, and the internal stress rises. From example 2 it follows that a high surface hardness (mohs hardness 7H) and a high transmittance can be obtained with suitable process parameters, which are very suitable for application on flexible screens.
Comparing example 2 with comparative examples 1 and 2, it can be seen that the film deposited by ICP only without biasing has a slow film forming speed and poor hardness performance, while the performance quality indexes of the films obtained by applying bias only without ICP are all worse than those of example 1.
TABLE 1
Figure DEST_PATH_GDA0003285246100000151
According to another specific embodiment of the present invention, the plasma coating apparatus can be used for preparing a superhydrophobic film layer. The method comprises the following specific steps:
step one, cleaning a base material
And respectively placing the glass sheets in deionized water and industrial ethanol for ultrasonic cleaning for 10 minutes to remove oil stains on the surfaces.
Step two, activating the substrate
Drying the washed glass sheet, loading the glass sheet into the plasma coating equipment, and vacuumizing the chamber to 1 x 10-2Introducing argon gas with the flow rate of 100sccm and the vacuum degree of 2Pa below Pa, loading 300V bias voltage on the rotating frame, setting the ICP power at 600W, and performing ion bombardment for 10min to increase the surface activity of the glass sheet.
Step three, forming the super-hydrophobic film layer
Preparing a super-hydrophobic film layer, introducing hexamethyldisiloxane steam, introducing argon gas at the monomer flow rate of 200 mu L/min and the flow rate of 100sccm, adjusting a butterfly valve to keep the vacuum pressure at 6Pa, loading 600V bias voltage on a rotating frame, setting the ICP power at 800W, and coating for 300 s.
Finally, the detection shows that the thickness of the obtained super-hydrophobic film layer is 70nm, the measured water contact angle value is more than 170 degrees, water drops can roll away by slight shaking,
it will be understood by those skilled in the art that the embodiments of the present invention as described above and shown in the drawings are given by way of example only and are not limiting of the present invention. The objects of the present invention have been fully and effectively accomplished. The functional and structural principles of the present invention have been shown and described in the embodiments without departing from the principles, embodiments of the present invention may have any deformation or modification.

Claims (20)

1. A plasma coating apparatus adapted to coat at least one sample, comprising:
the film coating cavity is provided with a film coating cavity;
at least one discharge coil, and
a radio frequency power supply, the coating chamber having a coating top wall, a coating bottom wall and a coating side wall, wherein the coating side wall extends between the coating top wall and the coating bottom wall, and the discharge coil is disposed at a side of the coating side wall of the coating chamber, such that after the sample is placed in the coating chamber, the discharge coil conductively connected to the radio frequency power supply discharges from a side of the sample toward the sample to provide a plasma coating environment.
2. The plasma-coating device of claim 1, wherein said discharge coil is designed as a planar structure and comprises a plurality of line segments of the same structure but different sizes, said plurality of line segments being nested one within the other.
3. The plasma coating apparatus according to claim 1, wherein the discharge coil is designed as a planar structure and is arranged to rotate outward from a starting point located at a middle position to form a multi-turn helical structure.
4. The plasma-coating device according to claim 3, wherein each of said turns of said discharge coil is arranged to have a rectangular profile.
5. The plasma coating apparatus of claim 1, wherein the plasma coating apparatus further comprises at least one mounting housing, wherein the mounting housing is disposed between the coating chamber and the discharge coil and protrudes outward to form a cup-shaped structure, wherein the discharge coil is wound around the mounting housing.
6. The plasma plating apparatus according to any one of claims 1 to 4, wherein said plasma plating apparatus further comprises a housing case and a housing chamber, said housing case being provided to project outwardly from at least a portion of said plating side wall of said plating chamber and forming said housing chamber, said housing chamber being communicated with said plating chamber and said plating side wall forming a housing chamber opening of said housing chamber.
7. The plasma coating apparatus according to claim 5, wherein the plasma coating apparatus further comprises a housing case and a housing chamber, the housing case is configured to protrude outward from at least a portion of the coating side wall of the coating chamber and forms the housing chamber, the housing chamber is communicated with the coating chamber and the coating side wall forms a housing chamber opening of the housing chamber.
8. The plasma-coating device according to claim 6, wherein said discharge coil is provided in said coating chamber and is disposed close to said receiving chamber opening of said receiving chamber.
9. The plasma plating apparatus according to claim 7, wherein the discharge coil is disposed outside the plating chamber and outside the receiving case, and the mounting case is disposed in the receiving case, and when the discharge coil is turned on, a magnetic field generated by the discharge coil passes through the mounting case and then the receiving chamber to reach the plating chamber.
10. The plasma plating apparatus according to claim 7, wherein the mounting case has a mounting case top wall and a mounting case peripheral wall extending outward from a periphery of the mounting case top wall and formed with a mounting cavity communicating with the accommodation cavity, and the discharge coil is wound around the mounting case peripheral wall, wherein the plasma plating apparatus has a feed opening and the feed opening is provided in the mounting case top wall.
11. The plasma plating apparatus according to claim 5, wherein the number of the discharge coils is two, each of the discharge coils corresponds to one of the mounting housings and the discharge coils are connected in series.
12. The plasma plating apparatus according to any one of claims 1 to 5, wherein said plasma plating apparatus has a feed opening provided on a side of said plating side wall of said plating chamber.
13. The plasma-coating apparatus according to any one of claims 1 to 5, wherein said plasma-coating apparatus further comprises a holder and a pulse power supply, wherein said holder is disposed in said coating chamber of said coating chamber and is conductively connected to said pulse power supply so that at least a part of said holder functions as an electrode of said pulse power supply.
14. A plasma coating apparatus, comprising:
the film coating cavity is provided with a film coating cavity;
at least one discharge coil;
at least one mounting housing, and
a radio frequency power supply, wherein the discharge coil is conductively connected to the radio frequency power supply, wherein the mounting housing is disposed outside the coating chamber and includes a mounting housing top wall and a mounting housing peripheral wall, and the mounting housing peripheral wall is disposed to extend from the periphery of the mounting housing top wall toward the coating chamber to form a mounting cavity in a surrounding manner, the mounting cavity is communicated with the coating chamber, wherein the discharge coil is disposed on the mounting housing peripheral wall, and when the discharge coil is conducted, the magnetic field generated by the discharge coil firstly passes through the mounting housing and then reaches the coating chamber.
15. The plasma coating apparatus according to claim 14, wherein the plasma coating apparatus has a feed opening provided in a top wall of the mounting housing.
16. The plasma coating apparatus according to claim 14, wherein the mounting housing is provided as a cup structure.
17. The plasma plating apparatus according to claim 14, wherein the number of the mounting housings and the number of the discharge coils are two, respectively, the two discharge coils are connected in series with each other and the mounting housings are symmetrically arranged at one side of the plating chamber.
18. A radio frequency discharge device adapted to be mounted in a coating chamber of a plasma coating apparatus, comprising:
at least one mounting housing; and
at least one discharge coil; and
a radio frequency power supply, wherein the discharge coil is conductively connected to the radio frequency power supply, wherein the mounting housing comprises a mounting housing top wall and a mounting housing surrounding wall, and the mounting housing surrounding wall is configured to extend from the periphery of the mounting housing top wall towards the coating cavity to form a mounting cavity in a surrounding manner, the mounting cavity is communicated with the coating cavity, wherein the discharge coil is configured on the mounting housing surrounding wall, and when the discharge coil is conducted, the magnetic field generated by the discharge coil firstly passes through the mounting housing and then reaches the coating cavity.
19. The rf discharge device of claim 18, wherein the rf discharge device has a feed opening disposed in the mounting housing top wall of the mounting housing.
20. The radio frequency discharge device of claim 18, wherein the mounting housing is configured as a cup structure.
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CN114171360A (en) * 2021-12-07 2022-03-11 北京北方华创微电子装备有限公司 Upper electrode device and process chamber
CN114453213A (en) * 2021-12-28 2022-05-10 佛山市思博睿科技有限公司 Method for preparing hydrophobic film by plasma vapor deposition
WO2022161151A1 (en) * 2021-02-01 2022-08-04 江苏菲沃泰纳米科技股份有限公司 Pecvd coating system and coating method
CN116997068B (en) * 2023-09-25 2023-12-26 湘潭宏大真空技术股份有限公司 Plasma generator for magnetron sputtering coating and magnetron sputtering coating machine

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022161151A1 (en) * 2021-02-01 2022-08-04 江苏菲沃泰纳米科技股份有限公司 Pecvd coating system and coating method
CN114171360A (en) * 2021-12-07 2022-03-11 北京北方华创微电子装备有限公司 Upper electrode device and process chamber
CN114171360B (en) * 2021-12-07 2023-11-14 北京北方华创微电子装备有限公司 Upper electrode device and process chamber
CN114453213A (en) * 2021-12-28 2022-05-10 佛山市思博睿科技有限公司 Method for preparing hydrophobic film by plasma vapor deposition
CN116997068B (en) * 2023-09-25 2023-12-26 湘潭宏大真空技术股份有限公司 Plasma generator for magnetron sputtering coating and magnetron sputtering coating machine

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