CN116996054A - Radio frequency switch circuit and radio frequency circuit - Google Patents
Radio frequency switch circuit and radio frequency circuit Download PDFInfo
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- CN116996054A CN116996054A CN202311028733.1A CN202311028733A CN116996054A CN 116996054 A CN116996054 A CN 116996054A CN 202311028733 A CN202311028733 A CN 202311028733A CN 116996054 A CN116996054 A CN 116996054A
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- 239000003990 capacitor Substances 0.000 claims abstract description 94
- 230000000903 blocking effect Effects 0.000 claims abstract description 89
- 230000001629 suppression Effects 0.000 claims abstract description 32
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 5
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 claims description 3
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 27
- 239000004065 semiconductor Substances 0.000 description 8
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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Abstract
A radio frequency switch circuit and a radio frequency circuit, the circuit comprises a first HEMT transistor, a first blocking capacitor and a leakage current suppression module; the source end and the drain end of the first HEMT transistor, wherein one end is connected with the first access end through the first blocking capacitor, the other end is connected with the second access end, and the gate end of the first HEMT transistor is connected with a first enabling control signal and is used for controlling the first HEMT transistor to be turned on or off according to the first enabling control signal; the first end of the leakage current suppression module is connected with one end of the first blocking capacitor, the second end of the leakage current suppression module is connected with the other end of the first blocking capacitor, and the third end of the leakage current suppression module receives a second enabling control signal and is used for raising the source/drain end potential of the first HEMT transistor when the first HEMT transistor is turned off according to the second enabling control signal so as to reduce the gate end leakage current of the first HEMT transistor. The drain current of the gate end of the first HEMT transistor can be reduced by adding the drain current suppression module.
Description
Technical Field
The application relates to the technical field of electronics, in particular to a radio frequency switch circuit and a radio frequency circuit.
Background
Like conventional Si (silicon) semiconductors developed BJT (Bipolar Junction Transistor ), CMOS (Complementary Metal Oxide Semiconductor (complementary metal oxide semiconductor), biCMOS (bipolar complementary metal oxide semiconductor) processes, gaAs (gallium arsenide) semiconductors also developed various processes including HEMT (High Electron Mobility Transistor ), pHEMT (pseudoelectron mobility transistor), etc., different processes have different characteristics, and different applications.
However, the HEMT transistor has higher gate leakage current in the off state, resulting in higher power consumption when the circuit is in standby.
Disclosure of Invention
In view of this, the application provides a radio frequency switch circuit and a radio frequency circuit, so as to solve the problems of larger leakage current at the gate end and larger power consumption during circuit standby of the existing radio frequency switch circuit.
The application provides a radio frequency switch circuit, which comprises a radio frequency switch circuit, a first HEMT transistor, a first blocking capacitor and a leakage current suppression module, wherein the first HEMT transistor is connected with the first blocking capacitor; one end of the source end and the drain end of the first HEMT transistor is connected with a first access end through the first blocking capacitor, the other end of the source end and the drain end of the first HEMT transistor is connected with a second access end, and the gate end of the first HEMT transistor is connected with a first enabling control signal and is used for controlling the first HEMT transistor to be turned on or off according to the first enabling control signal; the first end of the leakage current suppression module is connected with one end of the first blocking capacitor, the second end of the leakage current suppression module is connected with the other end of the first blocking capacitor, and the third end of the leakage current suppression module receives a second enabling control signal and is used for raising the source/drain end potential of the first HEMT transistor when the first HEMT transistor is turned off according to the second enabling control signal so as to reduce the gate end leakage current of the first HEMT transistor.
Optionally, the leakage current suppression module includes at least one auxiliary switch unit; the control end of the auxiliary switch unit receives the second enabling control signal, the first auxiliary end is connected with one end of the first blocking capacitor, the second auxiliary end is connected with the other end of the first blocking capacitor, and the control end is used for raising the potential of the first auxiliary end when the first HEMT transistor is turned off so as to inhibit the gate end leakage current of the first HEMT transistor.
Optionally, the auxiliary switch unit includes at least one second HEMT transistor; the control end of the auxiliary switch unit is a gate end of the second HEMT transistor, the first auxiliary end is a drain end of the second HEMT transistor, the second auxiliary end is a source end of the second HEMT transistor, or the first auxiliary end is a source end of the second HEMT transistor, and the second auxiliary end is a drain end of the second HEMT transistor; the gate-source end or the gate-drain end of the second HEMT transistor is used for being conducted when the first HEMT transistor is turned off so as to raise the source/drain end potential of the first HEMT transistor and inhibit the gate end leakage current of the first HEMT transistor.
Optionally, a ratio of a total gate width of the first HEMT transistor to a total gate width of the second HEMT transistor is greater than or equal to 5.
Optionally, the materials of the first HEMT transistor and the second HEMT transistor include at least one of: gallium arsenide, aluminum gallium arsenide, indium aluminum gallium arsenide.
Optionally, the first enable control signal and the second enable control signal are opposite in phase; the radio frequency switch circuit further comprises an inverting module; the input end of the inversion module is used for receiving the second enabling control signal, the output end of the inversion module is connected with the gate end of the first HEMT transistor, and the inversion module is used for outputting the first enabling control signal after inverting the second enabling control signal;
or, the input end of the inversion module is used for receiving the first enabling control signal, and the output end of the inversion module is connected with the gate end of the second HEMT transistor and is used for outputting the second enabling control signal after inverting the first enabling control signal.
Optionally, the radio frequency switch circuit further includes a second blocking capacitor, a first resistor and a second resistor; the source/drain end of the first HEMT transistor is connected with the second access end through the second blocking capacitor; the first resistor is connected between a source end and a drain end of the first HEMT transistor; when the output end of the inverting module is connected with the gate end of the first HEMT transistor, the second resistor is connected between the gate end of the first HEMT transistor and the output end of the inverting module; when the output end of the inverting module is connected with the gate end of the second HEMT transistor, one end of the second resistor is connected with the gate end of the first HEMT transistor, and the other end of the second resistor is used for receiving the first enabling control signal.
Optionally, the leakage current suppression module further includes a third blocking capacitor; the third blocking capacitor is connected between the source/drain end of the second HEMT transistor and the first access end;
the capacitance value of the third blocking capacitor is smaller than that of the first blocking capacitor.
Optionally, the radio frequency switching circuit is used as a variable capacitor bank.
Optionally, the radio frequency switch circuit further comprises an inductor;
one end of the inductor is connected with one end of the first blocking capacitor, and the other end of the inductor is connected with the first access end;
or alternatively, the first and second heat exchangers may be,
two ends of the inductor are respectively connected with the first access end and the second access end;
the radio frequency switch circuit is used for a variable frequency resonant network.
The application also provides a radio frequency circuit which comprises the radio frequency switch circuit.
According to the radio frequency switch circuit and the radio frequency circuit, the leakage current suppression module is added, when the first HEMT transistor is turned off, the source/drain electrode potential is raised, and then the voltage difference between the source/drain electrode and the gate end is increased, so that the drain current of the gate end of the first HEMT transistor is reduced, the drain end or the source end does not need to be connected with high voltage, and the first HEMT transistor can maintain the turn-off state.
Further, the ratio of the total gate width of the first HEMT transistor to the total gate width of the second HEMT transistor is greater than or equal to 5, thereby further reducing leakage current.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a conventional RF switch circuit;
FIG. 2 is a schematic diagram of a RF switch circuit according to an embodiment of the present application;
FIG. 3 is a schematic diagram of a RF switch circuit according to an embodiment of the present application;
FIG. 4 is a schematic diagram of a RF switch circuit according to an embodiment of the present application;
FIG. 5 is a schematic diagram of a RF switch circuit according to an embodiment of the application;
FIG. 6 is a circuit diagram of a RF switch circuit according to an embodiment of the application;
FIG. 7 is a circuit diagram of a RF switch circuit according to an embodiment of the application;
FIG. 8 is a circuit diagram of a RF switch circuit according to an embodiment of the present application;
FIG. 9 is a schematic diagram illustrating the leakage current flow in the RF switch circuit when the second enable control signal is high;
FIG. 10 is a schematic diagram illustrating the leakage current flow in the RF switch circuit when the second enable control signal is low;
fig. 11 (a) shows a radio frequency switch circuit according to an embodiment of the present application, and (b) shows an equivalent circuit diagram of (a);
fig. 12 (a) is a schematic diagram of an rf switch circuit according to an embodiment of the present application, and (b) is an equivalent circuit diagram of (a);
fig. 13 (a) is a schematic diagram of an rf switch circuit according to an embodiment of the application, and (b) is an equivalent circuit diagram of (a).
Detailed Description
When the HEMT transistor is used as a switch, the source terminal and the drain terminal are generally symmetrical, and are connected with an external circuit as signal terminals, the gate terminal is a direct current control terminal, and the impedance between the source terminal and the drain terminal is controlled by changing the bias voltage of the gate terminal, so that the switching of the switch state is realized. To prevent leakage of the rf signal, the gate terminal is typically connected to a large resistor or low pass filter circuit.
The inventor researches that a Schottky diode exists between the gate end and the channel of the depletion type HEMT transistor, and the total area of the Schottky diode is proportional to the total gate width of the HEMT transistor.
Referring to fig. 1, a circuit structure of a conventional rf switch circuit when turned off is shown.
In the existing radio frequency switch circuit, when the HEMT transistor is turned off, the gate end is grounded GND through a resistor R2, and the source/drain end is connected with a voltage source Vdd through a resistor R1, and at the moment, the HEMT transistor M is turned off between the source end and the drain end. Since the depletion mode HEMT transistor is turned on when the gate-source voltage Vgs is greater than the threshold voltage Vth, and the threshold voltage Vth of the depletion mode HEMT transistor is negative, a high voltage must be applied to the source/drain to ensure that it is in an off state. Meanwhile, since the HEMT transistor M is a large-sized device, there is a large reverse biased schottky diode at the gate end, so that there is a large leakage current at the gate end of the HEMT transistor M, and the current flowing direction of the leakage current at the gate end is as shown in fig. 1, from the voltage source Vdd, through the source/drain end of the HEMT transistor M, through the gate end of the HEMT transistor M, and finally to the ground GND. The source terminal and the drain terminal of the HEMT transistor M are connected to the first access terminal a and the second access terminal B, respectively.
In order to reduce the gate leakage current during the turn-off period of the HEMT transistor M, the inventors increase the drain potential when the HEMT transistor M turns off by adding a leakage current suppressing path, thereby increasing the voltage difference between the drain and the gate, so that the gate leakage current of the HEMT transistor M is reduced, and the drain or the source does not need to be connected to a high voltage, so that the HEMT transistor can maintain the turn-off state.
The following description of the embodiments of the present application will be made in detail and with reference to the accompanying drawings, wherein it is apparent that the embodiments described are only some, but not all embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to fall within the scope of the application. The various embodiments described below and their technical features can be combined with each other without conflict.
Referring to fig. 2, a schematic structure of a radio frequency switch circuit according to an embodiment of the application is shown.
The radio frequency switch circuit of the embodiment comprises a first HEMT transistor M1, a first blocking capacitor C1 and a leakage current suppression module 1; in other alternative embodiments, the number of the first HEMT transistors M1 may be plural, as shown in fig. 3, and the number of the first HEMT transistors M1 is two, where a drain terminal of one first HEMT transistor M1 is connected to the first terminal of the leakage suppression module 1, a source terminal is connected to a drain terminal of another first HEMT transistor M3, and a source terminal of another first HEMT transistor M3 is connected to the second access terminal B.
The present embodiment is exemplified by one first HEMT transistor M1.
The source end and the drain end of the first HEMT transistor M1, wherein one end is connected to the first access end a through the first blocking capacitor C1, the other end is connected to the second access end B, the gate end G of the first HEMT transistor M1 is connected to the first enable control signal EN1, and the first HEMT transistor M1 is controlled to be turned on or turned off according to the first enable control signal EN1 so as to control the on/off between the first input end and the second input end. In this embodiment, the drain terminal of the first HEMT transistor M1 is connected to the first access terminal a, the source terminal is connected to the second access terminal B, and in other optional embodiments, the drain terminal of the first HEMT transistor M1 is connected to the second access terminal B, and the source terminal is connected to the first access terminal a. The paths between the first access terminal A and the second access terminal B, namely the paths of the first HEMT transistor M1 and the first blocking capacitor C1 are the switch main paths of the radio frequency switch circuit, and whether the leakage current suppression module 1 works or not does not influence the normal work of the main paths.
The first end of the leakage current suppression module 1 is connected with one end of the first blocking capacitor C1, the second end of the leakage current suppression module 1 is connected with the other end of the first blocking capacitor C1, and the third end of the leakage current suppression module 1 receives a second enable control signal EN2, so that when the first HEMT transistor M1 is turned off, the potential of the drain end D of the first HEMT transistor M1 is raised according to the second enable control signal EN2, so as to reduce the gate end leakage current of the first HEMT transistor. The phases of the first enable control signal EN1 and the second enable control signal EN2 may be the same or opposite.
In other alternative embodiments, the source terminal S and the drain terminal D of the first HEMT transistor M1 may be exchanged, and one end of the leakage current suppression module 1 is connected to the source terminal S of the first HEMT transistor M1, so as to raise the potential of the source terminal S of the first HEMT transistor according to the second enable control signal EN2 when the first HEMT transistor M1 is turned off, so as to reduce the gate leakage current of the first HEMT transistor M1, so as to facilitate circuit design.
In the radio frequency switch circuit of the embodiment, because the size of the first HEMT transistor is larger, the schottky diode at the gate end of the radio frequency switch circuit can generate larger leakage current in the turn-off period of the first HEMT transistor, and by adding the leakage current suppression module, the leakage current suppression module is turned on in the turn-off period of the first HEMT transistor to raise the drain potential, thereby increasing the voltage difference between the drain and the gate end and suppressing the leakage current at the gate end of the first HEMT transistor. And because the gate width of the second HEMT transistor is properly selected, compared with the first HEMT transistor, the gate width of the second HEMT transistor can be small, and the leakage current on the whole leakage path can be further reduced. And the drain terminal or the source terminal of the first HEMT transistor is not required to be connected with high voltage, so that the HEMT transistor can maintain an off state.
Referring to fig. 4, a schematic structure of a radio frequency switch circuit according to an embodiment of the application is shown.
When the phases of the first enable control signal EN1 and the second enable control signal EN2 are opposite, the radio frequency switch circuit of the present embodiment further includes an inverting module 2.
The input end of the inverting module 2 is configured to receive a second enable control signal EN2, and the output end of the inverting module is connected to the gate end G of the first HEMT transistor M1, and is configured to invert the second enable control signal EN2 and output the first HEMT transistor M1.
The inverting module 2 includes an odd number of inverters and other circuit units that can realize an inverting function. The first enable control signal and the second enable control signal can form an inverted signal through the inversion module.
Referring to fig. 5, a schematic diagram of a radio frequency switch circuit according to an embodiment of the application is shown.
The input end of the inversion module 2 of the present embodiment is configured to receive the first enable control signal EN1, and the output end is connected to one end of the leakage current suppression module 1, and is configured to invert the first enable control signal EN1 and output the second enable control signal EN2, where when the leakage current suppression module 1 includes the second HEMT transistor, the output end of the inversion module 2 is connected to the gate end of the second HEMT transistor. By connecting the inverting module output terminal with the gate terminal of the second HEMT transistor, circuit design can be facilitated.
Referring to fig. 6, a circuit diagram of a radio frequency switch circuit according to an embodiment of the application is shown.
In the radio frequency switch circuit of the embodiment, the leakage current suppression module 1 includes at least one auxiliary switch unit; the drain terminal of the first HEMT transistor M1 is connected with the first access terminal A through a first blocking capacitor C1; the control end of the auxiliary switch unit receives the second enable control signal EN2, the first auxiliary end is connected to one end of the first blocking capacitor C1, and the second auxiliary end of the auxiliary switch unit is connected to the other end of the first blocking capacitor C1, so as to raise the potential of the first auxiliary end when the first HEMT transistor M1 is turned off, so as to inhibit the gate leakage current of the first HEMT transistor M1.
The auxiliary switching unit includes a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, a Metal-Oxide semiconductor field effect transistor, abbreviated as a Metal Oxide semiconductor field effect transistor), an IGBT (Insulated Gate Bipolar Transistor ), a HEMT transistor, and a pHEMT transistor.
The following exemplifies that the leakage current suppressing module 1 includes an auxiliary switching unit including a second HEMT transistor M2; the control end of the auxiliary switch unit is a gate end of the second HEMT transistor M2, the first auxiliary end is a drain end D of the second HEMT transistor M2, and the second auxiliary end is a source end S of the second HEMT transistor M2; the first enable control signal EN1 and the second enable control signal EN2 include a first level signal and a second level signal; for example, the first level signal may be a high level signal "1", the second level signal may be a low level signal "0", and in other alternative embodiments, the auxiliary switching unit includes other numbers of second HEMT transistors M2, the first level signal may be a low level signal "0", and the second level signal may be a high level signal "1", so as to improve convenience of circuit design.
The gate-source end or gate-drain end of the first HEMT transistor M1 is used for being turned off in reverse bias when the first level signal is "0", and the gate-source end or gate-drain end of the second HEMT transistor M2 is used for being turned on in forward bias when the second level signal is "1" so as to raise the drain gate/source gate voltage difference of the first HEMT transistor M1, so as to maintain the turn-off state of M1.
The materials of the first HEMT transistor M1 and the second HEMT transistor M2 include at least one of: gallium arsenide, aluminum gallium arsenide, indium aluminum gallium arsenide, preferably gallium arsenide. The first HEMT transistor and the second HEMT transistor are D-mode (depletion mode) pHEMT transistors.
The first HEMT transistor M1 and the second HEMT transistor M2 in this embodiment are the same type, both are N-type HEMT transistors, or both are P-type HEMT transistors. In other alternative embodiments, when the first HEMT transistor M1 and the second HEMT transistor M2 are different in type, one of them is an N-type HEMT transistor and the other is a P-type HEMT transistor, the inversion module may be omitted because the on-voltages thereof are opposite in polarity.
The ratio of the total gate width of the first HEMT transistor M1 to the total gate width of the second HEMT transistor M2 is larger, and is generally greater than or equal to 5, for example, the total gate width of the first HEMT transistor M1 is 1000um, and the total gate width of the second HEMT transistor M2 is 100um. In practice, the smaller the value of the total gate width of the second HEMT transistor M2, the better, the minimum total gate width allowed according to the advanced process manufacturing level can be made. When the number of the first HEMT transistors M1 and the second HEMT transistors M2 is plural, the total gate width of the first HEMT transistors M1 refers to the sum of gate widths of all the first HEMT transistors M1, and the total gate width of the second HEMT transistors M2 refers to the sum of gate widths of all the second HEMT transistors M2. Because the second HEMT transistor M2 has a smaller size and a smaller schottky diode area at the gate end, the leakage current of the second HEMT transistor M2 is smaller in both on and off states, so that the gate end leakage current of the whole circuit is smaller. The leakage current suppressing effect can be further improved by using the second HEMT transistor M2 having a smaller total gate width.
The radio frequency switch circuit of the embodiment further comprises a second blocking capacitor C2, a first resistor R1 and a second resistor R2; the source/drain end of the first HEMT transistor is connected with the second access end B through the second blocking capacitor C2; the first resistor R1 is connected between the source end and the drain end of the first HEMT transistor M1; the first blocking capacitor C1 is connected between the drain terminal D of the first HEMT transistor M1 and the first access terminal a, where the first access terminal a may be connected to an external circuit or grounded; one end of the second resistor R2 is connected to the gate end of the first HEMT transistor M1, and the other end is used for receiving the first enable control signal EN1. The second blocking capacitor C2 is connected between the source terminal S and the second access terminal B of the first HEMT transistor M1, where the second access terminal B may be connected to an external circuit or grounded or powered.
The first resistor R1 and the second resistor R2 are large resistors, and the resistance is typically several kiloohms to several tens of kiloohms. The first resistor R1 is used for providing a high-resistance direct current path between the drain and the source of the first HEMT transistor M1, so that on one hand, the direct current voltage between the drain and the source is kept consistent, and on the other hand, the leakage of radio frequency energy cannot be influenced because the resistance value of R1 is too low. The second resistor R2 is used for isolating the rf signal on the gate terminal of the first HEMT transistor M1 to reduce the leakage of rf energy. The first blocking capacitor C1 and the second blocking capacitor C2 are used for blocking direct current signals and providing an alternating current path.
The leakage current suppression module 1 further comprises a third resistor R3, a fourth resistor R4 and a third blocking capacitor C3; the third resistor R3 is connected between the source terminal and the drain terminal of the second HEMT transistor M2; one end of the fourth resistor R4 is connected to the gate end of the second HEMT transistor M2, and the other end is used for receiving the second enable control signal EN2; the third blocking capacitor C3 is connected between the source terminal of the second HEMT transistor M2 and the first access terminal a.
The third resistor R2 and the fourth resistor R4 are large resistors, and the resistance is typically several kiloohms to several tens of kiloohms. The fourth resistor R4 is used for isolating the rf signal on the gate terminal of the second HEMT transistor M2, so as to reduce the leakage of rf energy. The third resistor R3 is configured to provide a high-resistance dc path between the drain and the source of the second HEMT transistor M2, so that on one hand, the dc voltage between the drain and the source is kept consistent, and on the other hand, leakage of radio frequency energy cannot be affected due to too low resistance of R3. The third blocking capacitor C3 is used for blocking the dc signal and providing an ac path.
In an alternative embodiment, the source terminal and the drain terminal of the second HEMT transistor M2 may be interchanged, facilitating circuit design.
Referring to fig. 7, a circuit diagram of a radio frequency switch circuit according to an embodiment of the application is shown.
The radio frequency switch circuit of the embodiment further comprises an inverting module 2, wherein the inverting module 2 comprises an inverter INV; the first input end of the inverter INV is used for receiving a second enable control signal EN2, the second input end is connected with a voltage source Vdd, the third input end is grounded to GND, and the output end is connected with the gate end of the first HEMT transistor M1, so as to control the first HEMT transistor M1 to be turned off when the second HEMT transistor M2 is turned on. In other alternative embodiments, the inverting module 2 also includes other odd number of cascaded inverters. At this time, the second resistor R2 is connected between the gate terminal of the first HEMT transistor M1 and the output terminal of the inverter INV.
The inverter INV can conveniently realize the inversion of the first enable control signal EN1 and the second enable control signal EN2, thereby facilitating the circuit control.
In addition, in the radio frequency switch circuit of this embodiment, the capacitance value of the third blocking capacitor C3 is smaller than the capacitance value of the first blocking capacitor C1. Specifically, when the first HEMT transistor M1 is turned on and the second HEMT transistor M2 is turned off, M2 is equivalent to a very small capacitor Coff, the value of which is negligible, and is connected in series with the third blocking capacitor C3, and the overall value C3 '(C3' < < C3< < C1) of the equivalent series is connected in parallel with C1, wherein the symbol "<" indicates that the value is far smaller than that of the third blocking capacitor C3. The sizes of the first blocking capacitor C1 and the third blocking capacitor C3 can be reasonably configured, so that the first blocking capacitor C1 and the third blocking capacitor C3 meet the radio frequency performance requirement of a circuit, and the influence on the radio frequency working parameters of the circuit caused by the introduction of the leakage current suppression module is reduced.
Referring to fig. 8, a circuit diagram of a radio frequency switch circuit according to an embodiment of the application is shown.
The radio frequency switch circuit of the embodiment further comprises an inverting module 2, wherein the inverting module 2 comprises an inverter INV; the first input end of the inverter INV is configured to receive a first enable control signal EN1, the second input end is connected to the voltage source Vdd, the third input end is grounded to GND, the output end is connected to the gate end of the second HEMT transistor M2 through a fourth resistor R4, and configured to invert the first enable control signal EN1 and output the second enable control signal EN2, so as to control the second HEMT transistor M2 to be turned off when the first HEMT transistor M1 is turned on. In other alternative embodiments, the inverting module 2 also includes other odd number of cascaded inverters. At this time, one end of the second resistor R2 is connected to the gate terminal of the first HEMT transistor M1, and the other end is connected to the first enable control signal EN1.
Referring to fig. 9, the leakage current in the rf switch circuit flows to the schematic diagram when the second enable control signal is at the high level.
The working principle of the radio frequency switch circuit of the embodiment is as follows: when the second enable control signal EN2 is at a high level "1" (e.g., the value is 3.0V), the voltage source Vdd is 5V (volts), the inverter INV outputs 0, the gate terminal G of the first HEMT transistor M1 is reversely biased, i.e., the gate terminal voltage is smaller than the source terminal S or the drain terminal D voltage, the first HEMT transistor M1 is in an off state, the gate terminal G of the second HEMT transistor M2 is at a high voltage, the gate terminal of the second HEMT transistor M2 is forward biased, the forward bias voltage is 3.0V, the second HEMT transistor M2 is turned on, and the leakage current flows from EN2 to the second HEMT transistor M2. After the second HEMT transistor M2 is turned on, the voltage at the connection point with the drain terminal D of the first HEMT transistor M1 is raised, that is, the potential at the D terminal of the first HEMT transistor M1 is raised, so that the voltage difference between the drain-gate terminal Vdg and the source-gate terminal Vsg of the first HEMT transistor M1 is relatively high, and the off state of the first HEMT transistor M1 is ensured. Since the leakage current is in a "series" form, and passes through the gate terminal of the forward bias of M2 and the gate terminal of the reverse bias of M1, the magnitude of the leakage current at the gate terminal of M1 depends on the forward current at the gate terminal of M2. The smaller the width of the M2 gate, the smaller the forward current, and thus the smaller the gate leakage current of M1.
The leakage current continuously flows to the gate end through the reverse bias Schottky diode at the gate end of the first HEMT transistor M1 to form leakage current, and passes through the inverter INV to GND to complete a complete loop of the leakage current.
Referring to fig. 10, the leakage current in the rf switch circuit flows to the schematic diagram when the second enable control signal is at the low level.
The working principle of the radio frequency switch circuit of the embodiment is as follows: when the second enable control signal EN2 is at a low level 0, the voltage source Vdd is 5V (volts), the inverter INV outputs 1 (the value is 5V), the gate terminal G of the first HEMT transistor M1 is forward biased, the source S or drain D voltage of the first HEMT transistor M1 is pulled to about 4.5V (about 5V minus 0.5V) along with the high voltage of the gate terminal G, at this time, the first HEMT transistor M1 is in a conductive state, and the leakage current flows from Vdd of INV to the drain terminal of the first HEMT transistor M1 through the gate terminal G thereof. Since the gate terminal G of the second HEMT transistor M2 is low voltage, the gate terminal of the second HEMT transistor M2 is reverse biased, and the second HEMT transistor M2 is turned off, and since the gate width of the second HEMT transistor M2 is much smaller than the gate width of the first HEMT transistor M1, the total leakage current on the whole serial path is determined by the leakage current of the gate terminal of the second HEMT transistor M2, and compared with the leakage current of the gate terminal of the switch M1 in fig. 1, the function of suppressing the circuit leakage current is realized.
Meanwhile, as the gate width of M2 is very small, the off capacitance Coff between the drain and source ends which is presented in the off state is very small, compared with the prior art, the radio frequency performance of the whole circuit is not influenced, the working state of the first HEMT transistor is not influenced, the whole leakage current is obviously reduced, and the whole performance of the circuit is improved.
Referring to fig. 11, a radio frequency switch circuit and an equivalent circuit diagram of an embodiment of the application are shown.
As shown in fig. 11 (a), the main path of the radio frequency switching circuit of the present embodiment is composed of a first blocking capacitor C1, a first HEMT transistor M1, and a second blocking capacitor C2. When the capacitance values of the first blocking capacitor C1 and the second blocking capacitor C2 are equal, for example, the capacitance values of the first blocking capacitor C1 and the second blocking capacitor C2 are both C. As shown in fig. 11 (b), the equivalent circuit of the radio frequency switching circuit of the present embodiment. The switch in fig. 11 (b) is an equivalent circuit of the first HEMT transistor M1, and when M1 is turned on, since the first blocking capacitor C1 and the second blocking capacitor C2 are connected in series, the equivalent capacitance thereof is C/2. At this time, M2 is in an off state, which exhibits a small capacitance Coff, which is connected in series with the third blocking capacitor C3. The capacitance value of the third blocking capacitor C3 is far smaller than that of the first blocking capacitor C1, namely C3< < C1, so that the equivalent capacitance C3' < C/2 of C3 and Coff in series connection can reduce leakage current, and the leakage current suppression module has small influence on the main channel of the radio frequency switch circuit.
As can be seen from the equivalent circuit diagram of the rf switch circuit, the on/off of the switch can be controlled by the enable control signal to change the capacitance between the first access terminal a and the second access terminal B. The radio frequency switching circuit of the present embodiment is thus used as a variable capacitor group having a small leakage current. The number of the rf switch circuits may be plural, and the first input terminal a or the second input terminal B of each rf switch circuit may be used in parallel or in series to increase the variation range of the capacitance. The variable capacitor group can be connected to the input end or the output end of the radio frequency power amplifier, and different capacitance values can be selected to be used for radio frequency matching or filtering according to actual needs.
Referring to fig. 12, a radio frequency switch circuit and an equivalent circuit diagram of an embodiment of the application are shown. As shown in fig. 12 (a), the main circuit of the radio frequency switch circuit of this embodiment further includes an inductor L on the basis of fig. 11, where one end of the inductor L is connected to one end of the first blocking capacitor C1, and the other end of the inductor L is connected to the first access terminal a. In the radio frequency switch circuit of this embodiment, when the capacitance values of the first blocking capacitor C1 and the second blocking capacitor C2 are equal, for example, the capacitance values of the first blocking capacitor C1 and the second blocking capacitor C2 are both C. As shown in fig. 12 (b), the switch in the figure is an equivalent circuit of the first HEMT transistor M1, and when M1 is turned on, since the first blocking capacitor C1 and the second blocking capacitor C2 are connected in series, the equivalent capacitance thereof is C/2. At this time, M2 is in an off state, which exhibits a small capacitance Coff, which is connected in series with the third blocking capacitor C3. The capacitance value of the third blocking capacitor C3 is far smaller than that of the first blocking capacitor C1, namely C3< < C1, so that the equivalent capacitance C3' < C/2 of C3 and Coff in series connection can reduce leakage current, and the leakage current suppression module has small influence on the main channel of the radio frequency switch circuit.
As can be seen from the equivalent circuit diagram of the rf switch circuit, the on/off of the switch can be controlled by the enable control signal to change the capacitance between the first access terminal a and the second access terminal B. Therefore, the radio frequency switch circuit of the embodiment is used as a variable frequency resonant network, and the variable frequency resonant network is a series resonant network and has smaller leakage current. The number of the radio frequency switch circuits can be multiple, and the first input end A or the second input end B of each radio frequency switch circuit can be used in parallel or in series to increase the variation range of the capacitance and change the resonance frequency of the variable frequency resonance network. The variable frequency resonant network can be connected to the input end or the output end of the radio frequency power amplifier, and different capacitance values are selected to be used for radio frequency matching or filtering according to actual needs, or the variable frequency resonant network can be connected with the variable capacitor group in parallel and then connected in series in a circuit to filter signals between the first input end A and the second input end B.
Referring to fig. 13, a radio frequency switch circuit and an equivalent circuit diagram of an embodiment of the application are shown. As shown in fig. 13 (a), the radio frequency switch circuit of the present embodiment further includes an inductor L, where two ends of the inductor L are connected to the first access terminal a and the second access terminal B, respectively. In the radio frequency switch circuit of this embodiment, when the capacitance values of the first blocking capacitor C1 and the second blocking capacitor C2 are equal, for example, the capacitance values of the first blocking capacitor C1 and the second blocking capacitor C2 are both C. As shown in fig. 13 (b), the switch in the figure is an equivalent circuit of the first HEMT transistor M1, and when M1 is turned on, since the first blocking capacitor C1 and the second blocking capacitor C2 are connected in series, the equivalent capacitance thereof is C/2. At this time, M2 is in an off state, which exhibits a small capacitance Coff, which is connected in series with the third blocking capacitor C3. The capacitance value of the third blocking capacitor C3 is far smaller than that of the first blocking capacitor C1, namely C3< < C1, so that the equivalent capacitance C3' < C/2 of C3 and Coff in series connection can reduce leakage current, and the leakage current suppression module has small influence on the main channel of the radio frequency switch circuit.
As can be seen from the equivalent circuit diagram of the rf switch circuit, the on/off of the switch can be controlled by the enable control signal to change the capacitance between the first access terminal a and the second access terminal B. Therefore, the radio frequency switch circuit of the embodiment is used as a variable frequency resonant network, and the variable frequency resonant network is a parallel resonant network and has smaller leakage current. The number of the radio frequency switch circuits can be multiple, and the first input end A or the second input end B of each radio frequency switch circuit can be used in parallel or in series to increase the variation range of the capacitance and change the resonance frequency of the variable frequency resonance network. The variable frequency resonant network can be connected to the input end or the output end of the radio frequency power amplifier, and different capacitance values are selected to be used for radio frequency matching or filtering according to actual needs, or the variable frequency resonant network can be connected with the variable capacitor group in parallel and then connected in series in a circuit to filter signals between the first input end A and the second input end B.
The embodiment of the application also provides a radio frequency circuit comprising the radio frequency switch circuit, and the radio frequency circuit adopts the radio frequency switch circuit, so that the leakage current of the radio frequency circuit is reduced, and the stability of the radio frequency circuit is improved.
The foregoing embodiments of the present application are not limited to the above embodiments, but are intended to be included within the scope of the present application as defined by the appended claims and their equivalents.
Claims (11)
1. The radio frequency switch circuit is characterized by comprising a first access end, a second access end, a first HEMT transistor, a first blocking capacitor and a leakage current suppression module;
the source end and the drain end of the first HEMT transistor are connected with the first end of the first blocking capacitor, the other end of the first HEMT transistor is connected with the second access end, the second end of the first blocking capacitor is connected with the first access end, the gate end of the first HEMT transistor is connected with a first enabling control signal, and the first HEMT transistor is controlled to be turned on or off according to the first enabling control signal;
the leakage current suppression module comprises at least one auxiliary switch unit; the control end of the auxiliary switch unit receives the second enabling control signal, the first auxiliary end is connected with the first end of the first blocking capacitor, the second auxiliary end is connected with the second end of the first blocking capacitor, and the auxiliary switch unit is used for conducting when the first HEMT transistor is turned off according to the second enabling control signal, raising the potential of the connecting end of the first HEMT transistor and the first end of the first blocking capacitor, and forming a serial connection path of gate end leakage current with the first HEMT transistor so as to inhibit the gate end leakage current of the first HEMT transistor.
2. The radio frequency switching circuit according to claim 1, wherein the auxiliary switching unit comprises at least a second HEMT transistor;
the control end of the auxiliary switch unit is a gate end of the second HEMT transistor, the first auxiliary end is a drain end of the second HEMT transistor, the second auxiliary end is a source end of the second HEMT transistor, or the first auxiliary end is a source end of the second HEMT transistor, and the second auxiliary end is a drain end of the second HEMT transistor;
the second HEMT transistor is used for being conducted when the first HEMT transistor is turned off so as to raise the source/drain terminal potential of the first HEMT transistor, and a serial path of gate terminal leakage current is formed between the gate terminal of the second HEMT transistor and the gate terminal of the first HEMT transistor.
3. The radio frequency switching circuit of claim 2, wherein a ratio of a total gate width of the first HEMT transistor to a total gate width of the second HEMT transistor is greater than or equal to 5.
4. The radio frequency switching circuit of claim 3, wherein the material of the first HEMT transistor and the second HEMT transistor comprises at least one of:
gallium arsenide, aluminum gallium arsenide, indium aluminum gallium arsenide.
5. The radio frequency switching circuit of claim 2, wherein the first enable control signal and the second enable control signal are opposite in phase;
the radio frequency switch circuit further comprises an inverting module;
the input end of the inversion module is used for receiving the second enabling control signal, the output end of the inversion module is connected with the gate end of the first HEMT transistor, and the inversion module is used for outputting the first enabling control signal after inverting the second enabling control signal;
or, the input end of the inversion module is used for receiving the first enabling control signal, and the output end of the inversion module is connected with the gate end of the second HEMT transistor and is used for outputting the second enabling control signal after inverting the first enabling control signal.
6. The radio frequency switching circuit of claim 5, further comprising a second blocking capacitor, a first resistor, and a second resistor;
the source/drain end of the first HEMT transistor is connected with the second access end through the second blocking capacitor;
the first resistor is connected between a source end and a drain end of the first HEMT transistor;
when the output end of the inverting module is connected with the gate end of the first HEMT transistor, the second resistor is connected between the gate end of the first HEMT transistor and the output end of the inverting module;
when the output end of the inverting module is connected with the gate end of the second HEMT transistor, one end of the second resistor is connected with the gate end of the first HEMT transistor, and the other end of the second resistor is used for receiving the first enabling control signal.
7. The radio frequency switching circuit according to claim 6, wherein the leakage current suppression module further comprises a third blocking capacitor;
two ends of the third blocking capacitor are respectively connected with the second auxiliary end of the second HEMT transistor and the second end of the first blocking capacitor;
the capacitance value of the third blocking capacitor is smaller than that of the first blocking capacitor.
8. The radio frequency switching circuit according to any one of claims 1-7, wherein the radio frequency switching circuit is used as a variable capacitor bank.
9. The radio frequency switching circuit of claim 8, wherein the radio frequency switching circuit further comprises an inductor;
the inductor is connected in series between the second end of the first blocking capacitor and the first access end;
or alternatively, the first and second heat exchangers may be,
and two ends of the inductor are respectively connected with the first access end and the second access end.
10. The radio frequency switching circuit of claim 9, wherein the radio frequency switching circuit functions as a variable frequency resonant network.
11. A radio frequency circuit comprising a radio frequency switching circuit as claimed in any one of claims 1 to 10.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311028733.1A CN116996054A (en) | 2022-03-11 | 2022-03-11 | Radio frequency switch circuit and radio frequency circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311028733.1A CN116996054A (en) | 2022-03-11 | 2022-03-11 | Radio frequency switch circuit and radio frequency circuit |
| CN202210239493.9A CN114598310B (en) | 2022-03-11 | 2022-03-11 | Radio frequency switch circuit and radio frequency circuit |
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| CN202210239493.9A Division CN114598310B (en) | 2022-03-11 | 2022-03-11 | Radio frequency switch circuit and radio frequency circuit |
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| CN202311028733.1A Pending CN116996054A (en) | 2022-03-11 | 2022-03-11 | Radio frequency switch circuit and radio frequency circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6952118B2 (en) * | 2002-12-18 | 2005-10-04 | Intel Corporation | Gate-clocked domino circuits with reduced leakage current |
| JP2005268895A (en) * | 2004-03-16 | 2005-09-29 | Toshiba Corp | Switching circuit |
| JP2007174480A (en) * | 2005-12-26 | 2007-07-05 | Murata Mfg Co Ltd | High frequency switch device and communication apparatus |
| US20070152745A1 (en) * | 2005-12-30 | 2007-07-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method for reducing leakage current of an integrated circuit |
| JP6211889B2 (en) * | 2013-10-22 | 2017-10-11 | エスアイアイ・セミコンダクタ株式会社 | Voltage regulator |
| US10354994B2 (en) * | 2016-03-24 | 2019-07-16 | Qorvo Us, Inc. | Electrostatic discharge (ESD) protection in an electronic switching circuit |
| US9893723B1 (en) * | 2016-07-22 | 2018-02-13 | Micron Technology, Inc. | Apparatuses and methods for reducing off state leakage currents |
| US10666313B2 (en) * | 2017-11-07 | 2020-05-26 | Qorvo Us, Inc. | Radio frequency switch branch circuitry |
| TWI666841B (en) * | 2018-07-20 | 2019-07-21 | 立積電子股份有限公司 | Signal switching apparatus |
| CN109245737B (en) * | 2018-10-22 | 2024-05-14 | 东南大学 | Dynamic body bias class E power amplifier |
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