CN116996038A - Filter, multiplexer and RF front-end module - Google Patents
Filter, multiplexer and RF front-end module Download PDFInfo
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- CN116996038A CN116996038A CN202210439497.1A CN202210439497A CN116996038A CN 116996038 A CN116996038 A CN 116996038A CN 202210439497 A CN202210439497 A CN 202210439497A CN 116996038 A CN116996038 A CN 116996038A
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- acoustic wave
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- wave resonator
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 170
- 239000002184 metal Substances 0.000 claims abstract description 170
- 239000000758 substrate Substances 0.000 claims abstract description 108
- 239000003990 capacitor Substances 0.000 claims abstract description 42
- 238000010276 construction Methods 0.000 claims 3
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000000956 alloy Substances 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02062—Details relating to the vibration mode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention relates to a filter, a multiplexer and a radio frequency front end module, which comprises a capacitor and at least one bulk acoustic wave resonator; the capacitor comprises a first metal layer and a second metal layer, wherein the first metal layer is positioned on the lower surface of a substrate of the at least one bulk acoustic wave resonator, and the second metal layer is positioned on the upper surface of the substrate; the first metal layer, the second metal layer and the substrate form a capacitance area in a mutually overlapped area, and the orthographic projection of the capacitance area on the lower surface of the substrate is not overlapped with the orthographic projection of the resonance area of the at least one bulk acoustic wave resonator on the lower surface of the substrate. Thus, the capacitor is integrated with the bulk acoustic wave resonator, and can replace a capacitive element in the prior art when in use, so that the packaging size of the filter can be reduced.
Description
Technical Field
The invention belongs to the field of radio frequency filter devices, and relates to a filter, a multiplexer and a radio frequency front-end module.
Background
Bulk acoustic wave filters generally include a bulk acoustic wave resonator, a tuning element, and a package substrate, with both the bulk acoustic wave resonator and the tuning element being connected to the package substrate. The tuning element can be a capacitive element, and the capacitive element can reduce the effective electromechanical coupling coefficient of the bulk acoustic wave resonator, improve the near-end inhibition of the bulk acoustic wave filter and improve the filtering performance of the bulk acoustic wave filter.
However, the volume of the discrete capacitive element is generally large, so that the filter performance of the bulk acoustic wave filter is improved in this way, which results in an increase in the size of the bulk acoustic wave filter.
Disclosure of Invention
The filter, the multiplexer and the radio frequency front end module provided by the invention can realize high performance and small volume of the filter.
The embodiment of the invention provides a filter, which comprises a capacitor and at least one bulk acoustic wave resonator; the capacitor comprises a first metal layer and a second metal layer, wherein the first metal layer is positioned on the lower surface of a substrate of the at least one bulk acoustic wave resonator, and the second metal layer is positioned on the upper surface of the substrate; the first metal layer, the second metal layer and the substrate form a capacitance area in a mutually overlapped area, and the orthographic projection of the capacitance area on the lower surface of the substrate is not overlapped with the orthographic projection of the resonance area of the at least one bulk acoustic wave resonator on the lower surface of the substrate.
Optionally, the filter further includes a via, and the at least one bulk acoustic wave resonator includes a first bulk acoustic wave resonator; the wire through hole penetrates through the lower surface of the substrate to the upper surface of the piezoelectric layer of the at least one bulk acoustic wave resonator, and one end of the first metal layer penetrates through the wire through hole to be electrically connected with the upper electrode of the first bulk acoustic wave resonator; or the wire through hole penetrates from the lower surface of the substrate to the upper surface of the substrate, and one end of the first metal layer penetrates through the wire through hole so as to be electrically connected with the lower electrode of the first bulk acoustic wave resonator.
Optionally, the first bulk acoustic wave resonator is connected in series with the capacitor; one end of the second metal layer is electrically connected with a first conductive structure except for a lower electrode of the first bulk acoustic wave resonator, and the first conductive structure is positioned between the piezoelectric layer and the substrate; the other end of the first metal layer, the other end of the second metal layer and the area where the substrates overlap each other form the capacitance area.
An optional first bulk acoustic wave resonator is connected in parallel with the capacitor; one end of the first metal layer penetrates through the wire through hole to be electrically connected with the upper electrode of the first bulk acoustic wave resonator; one end of the second metal layer is electrically connected with the lower electrode of the first bulk acoustic wave resonator; the other end of the first metal layer, the other end of the second metal layer and the area where the substrates overlap each other form the capacitance area.
Optionally, the second metal layer and the lower electrode of the first bulk acoustic wave resonator are in an integrally formed structure.
Optionally, the second metal layer and the first conductive structure are integrally formed.
Optionally, the orthographic projection of the resonance region of the at least one bulk acoustic wave resonator on the lower surface of the substrate is not overlapped with the first metal layer, and is not overlapped with the orthographic projection of the second metal layer on the lower surface of the substrate.
In order to solve the above technical problems, an embodiment of the present invention provides a filter, including a capacitor and at least one bulk acoustic wave resonator; the capacitor comprises a first metal layer and a second metal layer, wherein the first metal layer is positioned on the lower surface of the substrate of the at least one bulk acoustic wave resonator, and the second metal layer is positioned on the upper surface of the piezoelectric layer of the at least one bulk acoustic wave resonator; the first metal layer, the second metal layer, the substrate and the piezoelectric layer form a capacitance region in a mutually overlapped region, and the orthographic projection of the capacitance region on the lower surface of the substrate is not overlapped with the orthographic projection of the resonance region of the at least one bulk acoustic wave resonator on the lower surface of the substrate.
Optionally, the filter further includes a via, and the at least one bulk acoustic wave resonator includes a first bulk acoustic wave resonator; the wire through hole penetrates through the lower surface of the substrate to the upper surface of the piezoelectric layer of the at least one bulk acoustic wave resonator, and one end of the first metal layer penetrates through the wire through hole to be electrically connected with the upper electrode of the first bulk acoustic wave resonator; or the wire through hole penetrates from the lower surface of the substrate to the upper surface of the substrate, and one end of the first metal layer penetrates through the wire through hole so as to be electrically connected with the lower electrode of the first bulk acoustic wave resonator.
Optionally, the first bulk acoustic wave resonator is connected in series with the capacitor; one end of the second metal layer is electrically connected with a second conductive structure except for an upper electrode of the first bulk acoustic wave resonator, and the second conductive structure is positioned on the upper surface of the piezoelectric layer; the other end of the first metal layer, the other end of the second metal layer, the piezoelectric layer and the region where the substrates overlap each other form the capacitance region.
Optionally, the first bulk acoustic wave resonator is connected in parallel with the capacitor; one end of the first metal layer penetrates through the wire through hole to be electrically connected with the lower electrode of the first bulk acoustic wave resonator; one end of the second metal layer is electrically connected with the upper electrode of the first bulk acoustic wave resonator; the other end of the first metal layer, the other end of the second metal layer, the piezoelectric layer and the region where the substrate overlaps each other form the capacitance region.
Optionally, the second metal layer and the upper electrode of the first bulk acoustic wave resonator are in an integrally formed structure.
Optionally, the second metal layer and the second conductive structure are integrally formed.
Optionally, the orthographic projection of the resonance region of the at least one bulk acoustic wave resonator on the lower surface of the substrate is not overlapped with the first metal layer, and is not overlapped with the orthographic projection of the second metal layer on the lower surface of the substrate.
To solve the above technical problems, an embodiment of the present invention provides a multiplexer, including a filter as described in any one of the above.
To solve the above technical problems, an embodiment of the present invention provides a radio frequency front end module, including a filter as described in any one of the above.
In the filter, the multiplexer and the radio frequency front end module provided by the embodiment of the invention, the first metal layer of the capacitor is arranged on the lower surface of the substrate, and the second metal layer of the capacitor is arranged on the upper surface of the substrate or the upper surface of the piezoelectric layer, so that the capacitor and the bulk acoustic wave resonator are manufactured into a whole. By integrating the capacitor on the bulk acoustic wave filter chip, the chip area is not obviously increased on the premise of improving the performance of the bulk acoustic wave filter, and the size of the bulk acoustic wave filter or the module package is greatly reduced.
In addition, in this embodiment, the first metal layer is disposed on the lower surface of the substrate, and parasitic resonance is not generated between the first metal layer and the second metal layer or between the substrate and the piezoelectric layer, and resonance peaks are not generated outside the band, so that the out-of-band suppression effect of the specific frequency band of the filter is not deteriorated. In addition, the capacitance value of the capacitance region formed by the arrangement mode of the embodiment is smaller, and compared with the existing discrete capacitance element, the arrangement mode of the embodiment can better control the accuracy of the capacitance value.
Drawings
FIG. 1 is a schematic diagram of a filter according to a first embodiment of the present invention;
fig. 2 is a schematic diagram of a filter according to a first embodiment of the invention
FIG. 3 is a schematic diagram of a partial cross section of a filter according to a first embodiment of the present invention;
FIG. 4 is a cross-sectional view taken along line A1-A1 of FIG. 3;
FIG. 5 is a sectional view taken from B1-B1 of FIG. 3;
FIG. 6 is a schematic diagram showing a partial cross section of a filter according to a first embodiment of the present invention;
FIG. 7 is a schematic diagram of a partial cross section of a filter according to a first embodiment of the present invention;
fig. 8 is a schematic diagram of a partial cross section of a filter according to a second embodiment of the present invention;
FIG. 9 is a cross-sectional view taken along line A2-A2 of FIG. 8;
FIG. 10 is a cross-sectional view taken along line B2-B2 of FIG. 8;
FIG. 11 is a schematic diagram showing a partial cross section of a second embodiment of the present invention;
fig. 12 is a schematic diagram of a partial cross section of a filter according to a second embodiment of the present invention.
Reference numerals in the specification are as follows:
100. a filter;
1. a bulk acoustic wave resonator; 1a, a first bulk acoustic wave resonator; 1b, a second bulk acoustic wave resonator; 11. a substrate; 12. an acoustic mirror; 13. a piezoelectric layer; 14. an upper electrode; 15. a lower electrode; 16. a resonance region; 17. a passivation layer; 18. a wire through hole;
2. a capacitor; 21. a first metal layer; 22. a second metal layer; 23. a capacitive region.
Detailed Description
In order to make the technical problems, technical schemes and beneficial effects solved by the invention more clear, the invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Example 1
As shown in fig. 1 and 2, the filter 100 is a ladder-type structure filter including a bulk acoustic wave resonator 1 and a capacitor 2. The bulk acoustic wave resonator 1 includes a plurality of parallel arm resonators and a plurality of series arm resonators, and the capacitor 2 may be connected in series or in parallel with any one of the parallel arm resonators, or may be connected in series or in parallel with any one of the series arm resonators. In addition, in the present embodiment, "a plurality of" means two or more. In other embodiments, the number of bulk acoustic wave resonators 1 of the filter 100 may be one (refer to fig. 7) or other numbers, and when the number of bulk acoustic wave resonators 1 of the filter 100 is plural, the connection relationship of the bulk acoustic wave resonators 1 may be set according to the actual requirement.
As shown in fig. 3 and 4, the bulk acoustic wave resonator 1 includes a substrate 11, an acoustic mirror 12, a piezoelectric layer 13, an upper electrode 14, and a lower electrode 15. Wherein the acoustic mirror 12 is disposed on the substrate 11, the lower electrode 15 is disposed on the upper surface of the acoustic mirror 12, the piezoelectric layer 13 is disposed on the upper surface of the lower electrode 15, and the upper electrode 14 is disposed on the upper surface of the piezoelectric layer 13. In addition, the region where the acoustic mirror 12, the lower electrode 15, the piezoelectric layer 13, and the upper electrode 14 overlap each other forms a resonance region 16, wherein the region surrounded by the dashed-line frame Q in fig. 4 is the resonance region 16. Further, the region where the four overlap each other may refer to a region where orthographic projections of the four on the lower surface of the substrate 11 can overlap.
In one possible embodiment, a seed layer may be further added between the bottom electrode 15 and the acoustic mirror 12, and the seed layer may be made of aluminum nitride or the like.
In the first embodiment, the material of the substrate 11 may be any of single crystal silicon, gallium arsenide, gallium nitride, sapphire, quartz, etc., and preferably, the substrate 11 is made of a material with a relatively large dielectric constant to reduce the capacitance area.
In one embodiment, acoustic mirror 12 is a cavity embedded in the upper surface of substrate 11. In other embodiments, the acoustic mirror 12 may be a bragg reflective layer, or may be configured by forming a cavity with a lower electrode, or the like.
In the first embodiment, the material of the piezoelectric layer 13 may be aluminum nitride, zinc oxide, lead zirconate titanate (PZT) or rare earth element doped material with a certain atomic ratio of the above materials. The piezoelectric layer 13 may also be selected from single crystal piezoelectric materials such as single crystal aluminum nitride, lithium niobate, lithium tantalate, quartz, and the like.
In the first embodiment, the upper electrode 14 may be made of a single metal material or a composite or alloy material of different metals. Alternatively, the upper electrode 14 may be made of one of molybdenum, tungsten, ruthenium, gold, magnesium, aluminum, copper, chromium, titanium, osmium, iridium, or a composite or alloy thereof. The lower electrode 15 may be made of a single metal material or a composite or alloy material of different metals. Alternatively, the upper electrode 14 may be made of one of molybdenum, tungsten, ruthenium, gold, magnesium, aluminum, copper, chromium, titanium, osmium, iridium, or a composite or alloy thereof. The materials of the upper electrode 14 and the lower electrode 15 may be the same or different.
As shown in fig. 4, the bulk acoustic wave resonator 1 further has a passivation layer 17, and the passivation layer 17 covers the outer surface of the upper electrode 14, wherein the passivation layer 17 may be made of silicon dioxide, silicon nitride, aluminum oxide, or the like.
In addition, in the first embodiment, the arrangement of the bulk acoustic wave resonator 1 may be a conventional one, and this embodiment will not be described here too much.
As shown in fig. 3 to 5, the capacitor 2 includes a first metal layer 21 and a second metal layer 22, the first metal layer 21 is located on the lower surface of the substrate 11, the second metal layer 22 is located on the upper surface of the substrate 11, and a capacitance region 23 is formed in a region where the first metal layer 21, the second metal layer 22 and the substrate 11 overlap each other, wherein a region surrounded by a dashed-line frame P in fig. 5 is the capacitance region 23. The region where the first metal layer 21, the second metal layer 22, and the substrate 11 overlap each other is a region where the three can overlap in orthographic projection on the lower surface of the substrate 11. In the present embodiment, the capacitor 2 is formed on the substrate 11, which corresponds to being integrally formed with the bulk acoustic wave resonator 1, and the capacitor 2 can be used instead of the capacitive element in the prior art, so that the package size of the filter 100 can be reduced.
In addition, in the present embodiment, the orthographic projection of the capacitance region 23 on the lower surface of the substrate 11 and the orthographic projection of the resonance region 16 of the bulk acoustic wave resonator 1 on the lower surface of the substrate 11 do not overlap, so that interference between the capacitance region 23 and the resonance region 16 can be effectively avoided.
In this embodiment, the first metal layer 21 is disposed on the lower surface of the substrate 11, and the capacitor formed by the first metal layer and the second metal layer 22 through the substrate 11 does not generate parasitic resonance, and does not generate resonance peaks outside the band, so that the out-of-band suppression effect of the specific frequency band of the filter 100 is not deteriorated. The capacitance value of the capacitor region 23 formed by the arrangement mode of the embodiment is smaller, and compared with the conventional discrete capacitor element, the arrangement mode of the embodiment can better control the accuracy of the capacitance value.
In the present embodiment, the capacitance c=εs/d of the capacitor 2, where ε is the dielectric constant of the substrate 11, S is the area of the overlapping region of the first metal layer 21 and the second metal layer 22, and d is the thickness of the substrate 11, where the thickness of the substrate 11 is the distance between the first metal layer 21 and the second metal layer 22. Typically, d >20um, and C is determined by the design requirements of the filter 100, and typically has a value between 0.01pF and 3 pF.
As shown in fig. 4, in one implementation of the first embodiment, the filter 100 further includes a via 18, where the via 18 penetrates from the lower surface of the substrate 11 to the upper surface of the piezoelectric layer 13; each bulk acoustic wave resonator 1 of the filter 100 includes a first bulk acoustic wave resonator 1a, and one end of the first metal layer 21 is disposed through the wire hole 18 to be electrically connected to the upper electrode 14 of the first bulk acoustic wave resonator 1 a. At this time, the first metal layer 21 is equivalent to two parts, wherein the first part is located on the lower surface of the substrate 11, the second part is electrically connected to the first part, and the second part is disposed through the via hole 18 to be electrically connected to the upper electrode 14 of the first bulk acoustic wave resonator 1a, and when the first metal layer 21 is prepared, some metal will be filled in the via hole 18 to electrically connect the first metal layer 21 to the upper electrode 14 of the first bulk acoustic wave resonator 1 a. It should be understood that, at this time, the lower electrode 15 of the first bulk acoustic wave resonator 1a is not electrically connected to the first metal layer 21, and a certain gap is provided between the lower electrode 15 of the first bulk acoustic wave resonator 1a and the via hole 18.
In other embodiments, the via hole 18 may extend from the lower surface of the substrate 11 to the upper surface of the substrate 11, and at this time, one end of the first metal layer 21 may be electrically connected to the lower electrode 15 of the first bulk acoustic wave resonator 1a through the via hole 18. In this way, the second metal layer 22 may not be electrically connected to the lower electrode 15 of the first bulk acoustic wave resonator 1a, but the second metal layer 22 may be electrically connected to a conductive structure (defining the conductive structure as a first conductive structure) other than the lower electrode 15 of the first bulk acoustic wave resonator 1a, the first conductive structure being located between the piezoelectric layer and the substrate 11 for production convenience, that is, the first conductive structure is also disposed on the upper surface of the substrate 11. The first conductive structure may be a pad of the filter 100, a trace connected to the pad, the lower electrode 15 of the other resonator 1, or a trace connecting the lower electrodes 15 of the two resonators 1. Of course, when one end of the first metal layer 21 is electrically connected to the upper electrode 14 of the first bulk acoustic wave resonator 1a, the second metal layer 22 may be electrically connected to the first conductive structure.
In one implementation manner of the first embodiment, the capacitor 2 is connected in series with the first bulk acoustic wave resonator 1a, at this time, one end of the first metal layer 21 of the capacitor 2 is electrically connected to the upper electrode 14 or the lower electrode 15 of the first bulk acoustic wave resonator 1a through the via hole 18, one end of the second metal layer 22 is electrically connected to the first conductive structure, and the other end of the first metal layer 21, the other end of the second metal layer 22 and the region where the substrate 11 overlaps with each other form a capacitance region.
As shown in fig. 1, in another possible embodiment, the capacitor 2 and the first bulk acoustic wave resonator 1a may be connected in parallel, where one end of the first metal layer 21 is disposed through the wire hole 18 to electrically connect the upper electrode 14 of the first bulk acoustic wave resonator 1 a; one end of the second metal layer 22 is electrically connected with the lower electrode 15 of the first bulk acoustic wave resonator 1 a; the other end of the first metal layer 21, the other end of the second metal layer 22, and the region where the substrates 11 overlap each other form a capacitance region. The second metal layer 22 and the lower electrode 15 of the first bulk acoustic wave resonator 1a are also electrically connected in various ways: as shown in fig. 3, each bulk acoustic wave resonator 1 further includes a second bulk acoustic wave resonator 1b, the lower electrode 15 of the first bulk acoustic wave resonator 1a is electrically connected with the lower electrode 15 of the second bulk acoustic wave resonator 1b through a wire, and the second metal layer 22 is electrically connected with the wire, so as to further realize electrical connection with the lower electrode 15 of the first bulk acoustic wave resonator 1 a; alternatively, as shown in fig. 6, the second metal layer 22 may be directly electrically connected to the lower electrode 15 of the first bulk acoustic wave resonator 1 a.
In addition, the second metal layer 22 and the lower electrode 15 of the first bulk acoustic wave resonator 1a are of an integrally formed structure, so that the production is more convenient; likewise, the second metal layer 22 and the first conductive structure may be an integrally formed structure. When the first conductive structure is the lower electrode 15 of the resonator 1 other than the first bulk acoustic wave resonator 1a, or the wiring connecting the lower electrodes 15 of the two resonators 1, or the wiring connecting the pads, the second metal layer 22, the lower electrode 15 of the first bulk acoustic wave resonator 1a, and the first conductive structure may be integrally formed. For example, a metal conductive layer may be prepared on the lower surface of the piezoelectric layer during production, and then the metal conductive layer is patterned by exposing, developing, etching, etc. to obtain the lower electrode 15, the second metal layer 22, and the first conductive structure of the first bulk acoustic wave resonator 1 a.
As shown in fig. 4, further, the aperture of the via hole 18 gradually decreases in the direction from the lower surface of the substrate 11 to the upper surface of the piezoelectric layer 13, so that the filling property of the first metal layer 21 in the via hole 18 can be improved. In other implementations, the aperture of the via hole 18 may be set to be uniform along the direction from the lower surface of the substrate 11 to the upper surface of the piezoelectric layer 13, which is not limited in this embodiment.
In the first embodiment, when the filter 100 has a bulk acoustic wave resonator 1, the orthographic projection of the resonance region 16 of the bulk acoustic wave resonator 1 on the lower surface of the substrate 11 does not overlap with the first metal layer 21, so that parasitic capacitance between the first metal and the upper electrode 14 or the lower electrode 15 can be avoided, leakage of acoustic energy from the region can be avoided, and thus the operation performance of the filter 100 can be improved; also, the orthographic projection of the resonance region 16 of the bulk acoustic wave resonator 1 on the lower surface of the substrate 11 and the orthographic projection of the second metal layer 22 on the lower surface of the substrate 11 do not overlap, so that parasitic capacitance between the second metal and the upper electrode 14 or the lower electrode 15 can be avoided. When the filter 100 has a plurality of bulk acoustic wave resonators 1, the orthographic projections of the resonance regions 16 of the respective bulk acoustic wave resonators 1 on the lower surface of the substrate 11 do not overlap with the first metal layer 21, and the orthographic projections of the resonance regions 16 of the respective bulk acoustic wave resonators 1 on the lower surface of the substrate 11 do not overlap with the orthographic projections of the second metal layer 22 on the lower surface of the substrate 11.
Note that, the non-overlapping in this embodiment may be not completely overlapping, or may be completely non-overlapping, and this embodiment is not limited.
Furthermore, in one possible implementation of the first embodiment, the first metal layer 21 and the second metal layer 22 may be two independent pads.
Example two
As shown in fig. 8 to 12, in the second embodiment, the filter 100 also includes the bulk acoustic wave resonator 1 and the capacitor 2. The number of bulk acoustic wave resonators 1 in the second embodiment may be one (refer to fig. 12) or plural (refer to fig. 8), and the related arrangement is the same as that in the first embodiment. The second embodiment differs from the first embodiment in that: although the capacitor 2 in the second embodiment also includes the first metal layer 21 and the second metal layer 22, in the second embodiment, the first metal layer 21 is located on the lower surface of the substrate 11 of the bulk acoustic wave resonator 1, and the second metal layer 22 is located on the upper surface of the piezoelectric layer 13 of the bulk acoustic wave resonator 1; the region where the first metal layer 21, the second metal layer 22, the substrate 11 and the piezoelectric layer 13 overlap each other forms a capacitance region 23, and the orthographic projection of the capacitance region 23 on the lower surface of the substrate 11 does not overlap with the orthographic projection of the resonance region 16 of the bulk acoustic wave resonator 1 on the lower surface of the substrate 11. The area surrounded by the dashed box Q in fig. 9 is the resonance area 16, and the area surrounded by the dashed box P in fig. 10 is the capacitance area 23.
In the second embodiment, the first metal layer 21 and the second metal layer 22 of the capacitor 2 are respectively disposed on the substrate 11 and the piezoelectric layer 13 so as to be integrated with the bulk acoustic wave resonator 1, which corresponds to the bulk acoustic wave resonator 1, and when in use, the capacitor 2 can replace a capacitive element in the prior art, thereby reducing the package size of the filter 100.
At this time, the orthographic projection of the resonance region 16 of each bulk acoustic wave resonator 1 on the lower surface of the substrate 11 does not overlap with the first metal layer 21. Likewise, the orthographic projection of the resonance region 16 of each bulk acoustic wave resonator 1 on the lower surface of the substrate 11 does not overlap with the orthographic projection of the second metal layer 22 on the lower surface of the substrate 11.
In addition, the second embodiment is different from the first embodiment in the following arrangement:
as shown in fig. 9, in one implementation manner of the second embodiment, the filter 100 is also provided with a via hole 18, and the via hole 18 penetrates from the lower surface of the substrate 11 to the upper surface of the substrate 11, and one end of the first metal layer 21 penetrates through the via hole 18 to be electrically connected to the lower electrode 15 of the first bulk acoustic wave resonator 1 a.
In another implementation manner of the second embodiment, the via hole 18 may penetrate from the lower surface of the substrate 11 to the upper surface of the piezoelectric layer 13, where one end of the first metal layer 21 penetrates through the via hole to be electrically connected to the upper electrode of the first bulk acoustic wave resonator 1 a.
In the second embodiment, the first bulk acoustic wave resonator 1a may be connected in series with the capacitor 2; at this time, one end of the first metal layer 21 may be electrically connected to the upper electrode or the lower electrode of the first bulk acoustic wave resonator 1a, and one end of the second metal layer 22 is electrically connected to a conductive structure (defining the conductive structure as a second conductive structure) other than the upper electrode 14 of the first bulk acoustic wave resonator 1a, where the second conductive structure is located on the upper surface of the piezoelectric layer 13; the other end of the first metal layer 21, the other end of the second metal layer 22, the piezoelectric layer 13, and the region where the substrates 11 overlap each other form a capacitance region 23. The second conductive structure may be a pad of the filter 100, a trace connected to the pad, the upper electrode 14 of the other resonator 1, or a trace connecting the upper electrodes 14 of the two resonators 1. In this case, the first metal layer 21 may be electrically connected to the upper electrode 14 of the first bulk acoustic wave resonator 1a or may be connected to the lower electrode 15 of the first bulk acoustic wave resonator 1 a.
In the second embodiment, the first bulk acoustic wave resonator 1a and the capacitor 2 may be connected in parallel; one end of the first metal layer 21 is penetrated through the wire hole 18 to be electrically connected with the lower electrode of the first bulk acoustic wave resonator 1 a; one end of the second metal layer 22 is electrically connected to the upper electrode 14 of the first bulk acoustic wave resonator 1 a; the other end of the first metal layer 21, the other end of the second metal layer 22, the piezoelectric layer 13, and the region where the substrates 11 overlap each other form a capacitance region 23. Among them, the electrical connection manner of the second metal layer 22 and the upper electrode 14 of the first bulk acoustic wave resonator 1a is also various: as shown in fig. 8, each bulk acoustic wave resonator 1 further includes a second bulk acoustic wave resonator 1b, the upper electrode 14 of the first bulk acoustic wave resonator 1a is electrically connected with the upper electrode 14 of the second bulk acoustic wave resonator 1b through a wire, and the second metal layer 22 is electrically connected with the wire, so as to further realize electrical connection with the upper electrode 14 of the first bulk acoustic wave resonator 1 a; alternatively, as shown in fig. 11, the second metal layer 22 may be directly electrically connected to the upper electrode 14 of the first bulk acoustic wave resonator 1 a.
In the second embodiment, the second metal layer 22 is provided on the upper surface of the piezoelectric layer 13, and may be an integrally formed structure with the upper electrode 14 of the first bulk acoustic wave resonator 1 a. In addition, the second metal layer 22 and the second conductive structure may be an integrally formed structure. When the second conductive structure is the upper electrode 14 of the resonator 1 other than the first bulk acoustic wave resonator 1a, or the wirings connecting the upper electrodes 14 of the two resonators 1, or the wirings connecting the pads, the second metal layer 22, the upper electrode 14 of the first bulk acoustic wave resonator 1a, and the second conductive structure may be integrally formed.
The present invention also provides a multiplexer, which includes the filter 100 according to any one of the above embodiments, wherein the multiplexer may be a duplexer, a triplexer, or the like, and the embodiment is not limited thereto.
In addition, the embodiment of the invention further provides a radio frequency front end module, which includes the filter 100 described in any of the above embodiments.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (16)
1. A filter comprising a capacitor and at least one bulk acoustic wave resonator; wherein,,
the capacitor comprises a first metal layer and a second metal layer, wherein the first metal layer is positioned on the lower surface of a substrate of the at least one bulk acoustic wave resonator, and the second metal layer is positioned on the upper surface of the substrate;
the first metal layer, the second metal layer and the substrate form a capacitance area in a mutually overlapped area, and the orthographic projection of the capacitance area on the lower surface of the substrate is not overlapped with the orthographic projection of the resonance area of the at least one bulk acoustic wave resonator on the lower surface of the substrate.
2. The filter of claim 1, further comprising a via, the at least one bulk acoustic wave resonator comprising a first bulk acoustic wave resonator;
the wire through hole penetrates from the lower surface of the substrate to the upper surface of the piezoelectric layer of the at least one bulk acoustic wave resonator; one end of the first metal layer penetrates through the wire through hole to be electrically connected with the upper electrode of the first bulk acoustic wave resonator; or,
the wire through hole penetrates from the lower surface of the substrate to the upper surface of the substrate, and one end of the first metal layer penetrates through the wire through hole to be electrically connected with the lower electrode of the first bulk acoustic wave resonator.
3. The filter of claim 2, wherein the first bulk acoustic wave resonator is connected in series with the capacitor;
one end of the second metal layer is electrically connected with a first conductive structure except for a lower electrode of the first bulk acoustic wave resonator, and the first conductive structure is positioned between the piezoelectric layer and the substrate;
the other end of the first metal layer, the other end of the second metal layer and the area where the substrates overlap each other form the capacitance area.
4. The filter of claim 2, wherein the first bulk acoustic wave resonator is connected in parallel with the capacitor;
one end of the first metal layer penetrates through the wire through hole to be electrically connected with the upper electrode of the first bulk acoustic wave resonator;
one end of the second metal layer is electrically connected with the lower electrode of the first bulk acoustic wave resonator;
the other end of the first metal layer, the other end of the second metal layer and the area where the substrates overlap each other form the capacitance area.
5. The filter of claim 4, wherein the second metal layer is of unitary construction with the lower electrode of the first bulk acoustic resonator.
6. A filter according to claim 3, wherein the second metal layer is of unitary construction with the first conductive structure.
7. The filter of claim 1, wherein an orthographic projection of the resonating region of the at least one bulk acoustic wave resonator on the lower surface of the substrate does not overlap the first metal layer and does not overlap an orthographic projection of the second metal layer on the lower surface of the substrate.
8. A filter comprising a capacitor and at least one bulk acoustic wave resonator; wherein,,
the capacitor comprises a first metal layer and a second metal layer, wherein the first metal layer is positioned on the lower surface of the substrate of the at least one bulk acoustic wave resonator, and the second metal layer is positioned on the upper surface of the piezoelectric layer of the at least one bulk acoustic wave resonator;
the first metal layer, the second metal layer, the substrate and the piezoelectric layer form a capacitance region in a mutually overlapped region, and the orthographic projection of the capacitance region on the lower surface of the substrate is not overlapped with the orthographic projection of the resonance region of the at least one bulk acoustic wave resonator on the lower surface of the substrate.
9. The filter of claim 8, further comprising a via, the at least one bulk acoustic wave resonator comprising a first bulk acoustic wave resonator;
the wire through hole penetrates through the lower surface of the substrate to the upper surface of the piezoelectric layer of the at least one bulk acoustic wave resonator, and one end of the first metal layer penetrates through the wire through hole to be electrically connected with the upper electrode of the first bulk acoustic wave resonator; or,
the wire through hole penetrates from the lower surface of the substrate to the upper surface of the substrate; one end of the first metal layer penetrates through the wire through hole to be electrically connected with the lower electrode of the first bulk acoustic wave resonator.
10. The filter of claim 9, wherein the first bulk acoustic wave resonator is connected in series with the capacitor;
one end of the second metal layer is electrically connected with a second conductive structure except for an upper electrode of the first bulk acoustic wave resonator, and the second conductive structure is positioned on the upper surface of the piezoelectric layer;
the other end of the first metal layer, the other end of the second metal layer, the piezoelectric layer and the region where the substrate overlaps each other form the capacitance region.
11. The filter of claim 9, wherein the first bulk acoustic wave resonator is connected in parallel with the capacitor;
one end of the first metal layer penetrates through the wire through hole to be electrically connected with the lower electrode of the first bulk acoustic wave resonator;
one end of the second metal layer is electrically connected with the upper electrode of the first bulk acoustic wave resonator;
the other end of the first metal layer, the other end of the second metal layer, the piezoelectric layer and the region where the substrate overlaps each other form the capacitance region.
12. The filter of claim 10, wherein the second metal layer is of unitary construction with the upper electrode of the first bulk acoustic resonator.
13. The filter of claim 9, wherein the second metal layer is an integral structure with the second conductive structure.
14. The filter of claim 8, wherein an orthographic projection of the resonating region of the at least one bulk acoustic wave resonator on the lower surface of the substrate does not overlap the first metal layer and does not overlap an orthographic projection of the second metal layer on the lower surface of the substrate.
15. A multiplexer comprising the filter of any one of claims 1-14.
16. A radio frequency front end module comprising the filter of any of claims 1-14.
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| CN202210439497.1A CN116996038B (en) | 2022-04-25 | 2022-04-25 | Filter, multiplexer and RF front-end module |
| PCT/CN2023/090564 WO2023207966A1 (en) | 2022-04-25 | 2023-04-25 | Filter, multiplexer, and radio frequency front-end module |
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| CN202210439497.1A CN116996038B (en) | 2022-04-25 | 2022-04-25 | Filter, multiplexer and RF front-end module |
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| CN117375568A (en) * | 2023-12-07 | 2024-01-09 | 常州承芯半导体有限公司 | Bulk acoustic wave resonator device and method for forming bulk acoustic wave resonator device |
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| WO2023207966A1 (en) | 2023-11-02 |
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