CN116994631A - ECC-based flash memory particle multiple screening method, controller and medium - Google Patents
ECC-based flash memory particle multiple screening method, controller and medium Download PDFInfo
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/38—Response verification devices
- G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
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- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/06—Acceleration testing
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- G—PHYSICS
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- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/14—Implementation of control logic, e.g. test mode decoders
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/44—Indication or identification of errors, e.g. for repair
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C2029/4402—Internal storage of test result, quality data, chip identification, repair information
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Abstract
The invention discloses a flash memory particle multiple screening method based on ECC, a controller and a storage medium, wherein the method comprises the steps of obtaining specification information of flash memory particles to be detected, wherein the specification information comprises a maximum ECC and a read-write temperature range; performing multiple first writing and reading processes on the flash memory particles according to the reading and writing temperature range to simulate early failure of the flash memory particles, and performing screening marking process on a plurality of blocks in the flash memory particles according to the maximum ECC in the process of each first writing and reading process to obtain early failure experimental data; and performing second writing and reading processing on the flash memory particles according to the reading and writing temperature range, and performing screening marking processing on a plurality of blocks in the flash memory particles according to early failure experimental data and the maximum ECC in the second writing and reading processing process to obtain particle screening results, and writing the particle screening results into the flash memory particles so that the screening results can effectively show the normal performance of the particles, and further the precision of the particle screening results and the grading quality control of the flash memory particles are improved.
Description
Technical Field
The invention relates to the technical field of flash memory particle screening, in particular to an ECC-based flash memory particle multiple screening method, a controller and a storage medium.
Background
In the prior art, a scheme for carrying out single classification on flash memory particles according to fixed ECC (Error Checking and Correct ing) indexes is provided, wherein the specific classification process comprises the steps of respectively carrying out high-temperature writing and high-temperature reading and HL (high-temperature writing and low-temperature reading) on two scenes HH (high-temperature writing and high-temperature reading), operating a test program after the temperature reaches the external set temperature, writing the result of the round into a flash memory medium after the round of test is completed, and after the temperature of the next scene reaches the next round of test, reading the test result of the previous round into a memory by the flash memory before the test program of the next round is operated, continuing the test action of the stage, and superposing the test result of the previous round and writing the test result into the flash memory medium; the method has the advantages of simple operation and high yield of the screened flash memory particles.
However, since the flash memory particles generally have the earlier use condition in the bathtub curve model, the performance of the flash memory particles may not reach the normal performance in the initial test, so that when the single fixed ECC threshold is used for screening the particles once according to the method, the accuracy of the finally obtained screening result is poor, the normal performance of the particles cannot be represented, and the screening result with poor accuracy finally directly affects the grading quality control of the flash memory particles.
Disclosure of Invention
The embodiment of the invention provides a multi-time screening method, a controller and a computer storage medium for flash memory particles based on ECC (error correction code). The scheme of the invention can at least ensure that the flash memory particles are subjected to multi-time erasing and reading and screening marking treatment so as to simulate early failure of the flash memory particles, so that the finally obtained screening result can effectively show normal performance of the particles, and further the accuracy of the screening result and the grading quality control of the flash memory particles are improved.
In a first aspect, an embodiment of the present invention provides a method for multiple screening of flash memory particles based on ECC, where the method includes:
acquiring specification information of flash memory particles to be detected, wherein the specification information comprises a maximum ECC (error correction code) and a read-write temperature range;
performing multiple first writing and reading processes on the flash memory particles according to the reading and writing temperature range to simulate early failure of the flash memory particles, and performing screening marking process on a plurality of blocks in the flash memory particles according to the maximum ECC in the process of each first writing and reading process to obtain early failure experimental data, and writing the early failure experimental data into the flash memory particles;
and performing second writing and reading processing on the flash memory particles according to the reading and writing temperature range, and performing screening marking processing on a plurality of blocks in the flash memory particles according to the early failure experimental data and the maximum ECC in the second writing and reading processing process to obtain particle screening results, and writing the particle screening results into the flash memory particles.
In some embodiments, the first writing and reading process is a high temperature writing and high temperature reading process, the performing multiple first writing and reading processes on the flash memory grain according to the reading and writing temperature range to simulate early failure of the flash memory grain, and in each first writing and reading process, performing screening and marking process on a plurality of blocks in the flash memory grain according to the maximum ECC to obtain early failure experimental data, where the screening and marking process includes:
determining a first ECC threshold and a second ECC threshold according to the maximum ECC, a first preset proportion and a second preset proportion, wherein the first ECC threshold is larger than the second ECC threshold;
determining a first writing temperature and a first reading temperature according to the reading-writing temperature range;
performing high-temperature writing and high-temperature reading processing on the flash memory particles for multiple times according to the first writing temperature and the first reading temperature to simulate early failure of the flash memory particles, and performing screening marking processing on a plurality of blocks in the flash memory particles according to the first ECC threshold and the second ECC threshold in the process of each high-temperature writing and high-temperature reading processing to obtain a plurality of screening result data;
and obtaining early failure experimental data according to the intersection of a plurality of screening results.
In some embodiments, performing a screening flag process on a plurality of blocks in the flash memory granule according to the first ECC threshold and the second ECC threshold includes:
in the process of each high-temperature writing and high-temperature reading process, screening and marking the current target block according to the first ECC threshold and the second ECC threshold to mark the current target block as a good-performance block or a bad block, and after marking, carrying out screening and marking process on the next target block again until each block in the flash memory particles is traversed;
wherein the current target block and the next target block are both unmarked blocks.
In some embodiments, filtering and marking the current target block according to the first ECC threshold and the second ECC threshold to mark the current target block as a good performing block or a bad block includes:
performing data erasure processing on the current target block, and marking the current target block as a bad block under the condition of erasure failure;
carrying out data writing processing on the current target block under the condition that the erasure is successful, and marking the current target block as a bad block under the condition that the data writing fails;
under the condition that the data writing is successful, carrying out data reading processing on the current target block so as to obtain the maximum error bit number;
Marking a current target block as a bad block if the maximum number of error bits is greater than the first ECC threshold; if the maximum number of error bits is less than or equal to the first ECC threshold and the maximum number of error bits is greater than the second ECC threshold, not marking the current target block; and marking the current target block as a good-performance block under the condition that the maximum error bit number is smaller than or equal to the second ECC threshold.
In some embodiments, the second writing and reading process includes a high temperature writing and high temperature reading process, the second writing and reading process is performed on the flash memory grain according to the reading and writing temperature range, and during the second writing and reading process, a screening marking process is performed on a plurality of blocks in the flash memory grain according to the early failure experimental data and the maximum ECC, so as to obtain a grain screening result, including:
determining a first ECC threshold and a second ECC threshold according to the maximum ECC, a first preset proportion and a second preset proportion, wherein the first ECC threshold is larger than the second ECC threshold;
determining a second writing temperature and a second reading temperature according to the reading-writing temperature range;
and performing high-temperature writing and high-temperature reading processing on the flash memory particles according to the second writing temperature and the second reading temperature, and performing screening marking processing on a plurality of blocks in the flash memory particles according to the early failure experimental data, the first ECC threshold and the second ECC threshold in the high-temperature writing and high-temperature reading processing process to obtain particle screening results.
In some embodiments, the performing a screening flag process on the plurality of blocks in the flash memory grain according to the early failure experimental data, the first ECC threshold, and the second ECC threshold includes:
determining a plurality of unlabeled blocks from a plurality of blocks according to the early failure experimental data;
performing data erasure processing on the current unmarked block, and marking the current unmarked block as a bad block under the condition of erasure failure;
carrying out data writing processing on the current unmarked block under the condition that the erasure is successful, and marking the current unmarked block as a bad block under the condition that the data writing fails;
under the condition of successful data writing, carrying out data reading processing on the current unmarked block so as to obtain the maximum error bit number;
marking a currently unmarked block as a bad block if the maximum number of error bits is greater than the first ECC threshold; if the maximum number of error bits is less than or equal to the first ECC threshold and the maximum number of error bits is greater than the second ECC threshold, not marking the current unmarked block; marking the current unmarked block as a good performing block if the maximum number of error bits is less than or equal to the second ECC threshold;
And after the marking process is finished, screening and marking the next unmarked block again until each unmarked block in the flash memory particle is traversed.
In some embodiments, the second write-read process further includes a high temperature write-read process, and after the screening marking process is performed on the plurality of blocks in the flash memory grain according to the early failure experimental data, the first ECC threshold, and the second ECC threshold, the method further includes:
determining a third ECC threshold according to the maximum ECC and a third preset proportion, wherein the third ECC threshold is larger than the first ECC threshold;
determining a third reading temperature according to the reading-writing temperature range, wherein the third reading temperature is smaller than the second reading temperature;
and performing low-temperature reading treatment on the flash memory particles according to the third reading temperature, and performing screening marking treatment on a plurality of blocks in the flash memory particles according to the screening marking result of the high-temperature writing high-temperature reading treatment and the third ECC threshold in the high-temperature reading treatment process to obtain a particle screening result.
In some embodiments, the performing the screening marking process on the plurality of blocks in the flash memory granule according to the screening marking result of the high temperature writing and high temperature reading process and the third ECC threshold includes:
Determining a plurality of unmarked blocks from a plurality of blocks according to the screening marking result;
reading data processing is carried out on the current unmarked block so as to obtain the maximum error bit number;
marking the current unmarked block as a run-time bad block if the maximum number of error bits is greater than the third ECC threshold; and under the condition that the maximum error bit number is smaller than or equal to the third ECC threshold, screening and marking the next unmarked block again until each unmarked block in the flash memory granule is traversed.
In a second aspect, an embodiment of the present invention provides a controller, including a memory, a processor, and a computer program stored on the memory and capable of running on the processor, where the processor implements the ECC-based flash memory granule multiple screening method according to any one of the embodiments of the first aspect when the processor executes the computer program.
In a third aspect, an embodiment of the present invention provides a computer readable storage medium storing computer executable instructions for performing the ECC-based flash memory granule multiple screening method according to any one of the embodiments of the first aspect.
The invention has at least the following beneficial effects: the invention provides an ECC-based flash memory particle multiple screening method, which comprises the steps of obtaining specification information of flash memory particles to be detected, wherein the specification information comprises a maximum ECC and a read-write temperature range; performing multiple first writing and reading processes on the flash memory particles according to the reading and writing temperature range to simulate early failure of the flash memory particles, and performing screening marking process on a plurality of blocks in the flash memory particles according to the maximum ECC in the process of each first writing and reading process to obtain early failure experimental data, and writing the early failure experimental data into the flash memory particles; performing second writing and reading processing on the flash memory particles according to the reading and writing temperature range, and performing screening marking processing on a plurality of blocks in the flash memory particles according to the early failure experimental data and the maximum ECC in the second writing and reading processing process to obtain particle screening results and writing the particle screening results into the flash memory particles, wherein the scheme of the invention simulates early failure of the flash memory particles by performing multiple times of erasing and reading and screening marking processing on the flash memory particles to perform writing and screening marking processing on the flash memory particles again after the early failure data are obtained, and finally obtaining particle screening results, so that the screening results can effectively reflect normal performance of the particles, and further the accuracy of the screening results and the grading quality control of the flash memory particles are improved; in the process of multiple screening, the method can limit the ECC threshold for screening the particles so as to control the quality control of the particle screening result, thereby better meeting the personalized requirements of users.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention may be realized and attained by the structure particularly pointed out in the written description and drawings.
Drawings
FIG. 1 is a flow chart illustrating multiple screening of ECC-based flash memory particles according to an embodiment of the present invention;
FIG. 2 is a flowchart of performing a screening and marking process to obtain early failure experimental data according to another embodiment of the present invention;
FIG. 3 is a flowchart illustrating a filtering and marking process for a current target block according to a first ECC threshold and a second ECC threshold according to another embodiment of the present invention;
FIG. 4 is a flowchart of a screening marking process to obtain a particle screening result according to another embodiment of the present invention;
FIG. 5 is a flowchart illustrating a process of screening and marking multiple blocks in a flash memory granule according to early failure experimental data, a first ECC threshold and a second ECC threshold according to another embodiment of the present invention;
FIG. 6 is a flow chart illustrating a low temperature read process according to another embodiment of the present invention;
FIG. 7 is a flowchart illustrating an early failure simulation experiment in an ECC-based flash memory particle multi-screening method according to another embodiment of the present invention;
FIG. 8 is a flowchart showing a specific process of writing and reading at a high temperature in the ECC-based flash memory granule multiple screening method according to another embodiment of the present invention;
FIG. 9 is a specific flow chart of low-temperature reading in the ECC-based flash memory granule multiple screening method according to another embodiment of the present invention;
fig. 10 is a schematic diagram of a controller according to another embodiment of the invention.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
In some embodiments, although functional block division is performed in a system diagram, logical order is shown in a flowchart, in some cases, steps shown or described may be performed in a different order than block division in a system, or in a flowchart. The terms first, second and the like in the description and in the claims and in the above-described figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order.
Furthermore, unless explicitly specified and limited otherwise, the term "coupled/connected" is to be interpreted broadly, as for example, being either fixedly coupled or movably coupled, being either detachably coupled or not detachably coupled, or being integrally coupled; can be mechanically connected, electrically connected or can be communicated with each other; can be directly connected or indirectly connected through an intermediate medium.
In the description of the embodiments of the present invention, the descriptions of the terms "one embodiment/implementation," "another embodiment/implementation," or "certain embodiments/implementations," "the above embodiments/implementations," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or examples is included in at least two embodiments or implementations of the present disclosure. In the present disclosure, schematic representations of the above terms do not necessarily refer to the same illustrative embodiment or implementation. It should be noted that although a logical order is illustrated in the flowchart, in some cases, the steps illustrated or described may be performed in an order different from that in the flowchart.
In the prior art, a scheme for carrying out single classification on flash memory particles according to fixed ECC (Error Checking and Correct ing) indexes is provided, wherein the specific classification process comprises the steps of respectively carrying out high-temperature writing and high-temperature reading and HL (high-temperature writing and low-temperature reading) on two scenes HH (high-temperature writing and high-temperature reading), operating a test program after the temperature reaches the external set temperature, writing the result of the round into a flash memory medium after the round of test is completed, and after the temperature of the next scene reaches the next round of test, reading the test result of the previous round into a memory by the flash memory before the test program of the next round is operated, continuing the test action of the stage, and superposing the test result of the previous round and writing the test result into the flash memory medium; the method has the advantages of simple operation and high yield of the screened flash memory particles; however, since the flash memory particles generally have the earlier use condition in the bathtub curve model, the performance of the flash memory particles may not reach the normal performance in the initial test, so that when the single fixed ECC threshold is used for screening the particles once according to the method, the accuracy of the finally obtained screening result is poor, the normal performance of the particles cannot be represented, and the screening result with poor accuracy finally directly affects the grading quality control of the flash memory particles.
In order to solve at least the above problems, the present invention provides a multi-time screening method for flash memory particles based on ECC, by obtaining specification information of flash memory particles to be detected, the specification information includes a maximum ECC and a read-write temperature range; performing multiple first writing and reading processes on the flash memory particles according to the reading and writing temperature range to simulate early failure of the flash memory particles, and performing screening marking process on a plurality of blocks in the flash memory particles according to the maximum ECC (error correction code) in the process of each first writing and reading process to obtain early failure experimental data, and writing the early failure experimental data into the flash memory particles; performing second writing and reading processing on the flash memory particles according to a reading and writing temperature range, and performing screening marking processing on a plurality of blocks in the flash memory particles according to early failure experimental data and maximum ECC (error correction code) in the second writing and reading processing process to obtain particle screening results, and writing the particles into the flash memory particles, wherein the scheme of the invention comprises the steps of performing multiple erasing and reading and screening marking processing on the flash memory particles to simulate early failure of the flash memory particles, performing writing and reading and screening marking processing on the flash memory particles again after early failure data are obtained, and finally obtaining particle screening results, so that the screening results can effectively reflect normal performance of the particles, and further improving accuracy of the screening results and grading quality control of the flash memory particles; in the process of multiple screening, the method can limit the ECC threshold for screening the particles so as to control the quality control of the particle screening result, thereby better meeting the personalized requirements of users.
In some embodiments, flash memory is a non-volatile memory technology that can retain data when powered down, while flash memory granules (or flash chips, flash cells) in the present application are the most basic components that make up flash memory devices, including but not limited to NAND flash memory and NOR flash memory.
In some embodiments, grading quality control refers to a method for classifying and controlling quality of products according to characteristics such as performance and quality in the manufacturing process of the products, and the method can effectively improve precision of grading quality control, thereby helping to ensure that the products reach expected performance standards and improving customer satisfaction.
Embodiments of the present application are further described below with reference to the accompanying drawings.
Referring to fig. 1, fig. 1 is a flowchart of an ECC-based flash memory granule multiple screening method according to an embodiment of the present application; in some embodiments, the ECC-based flash memory granule multiple screening method at least includes the steps of:
step S110, obtaining specification information of flash memory particles to be detected, wherein the specification information comprises a maximum ECC (error correction code) and a read-write temperature range;
step S120, performing multiple first writing and reading processes on the flash memory particles according to the reading and writing temperature range to simulate early failure of the flash memory particles, and performing screening marking process on a plurality of blocks in the flash memory particles according to the maximum ECC in the process of each first writing and reading process to obtain early failure experimental data, and writing the early failure experimental data into the flash memory particles;
And step S130, performing second writing and reading processing on the flash memory particles according to the reading and writing temperature range, and performing screening marking processing on a plurality of blocks in the flash memory particles according to early failure experimental data and the maximum ECC in the second writing and reading processing process to obtain particle screening results, and writing the particle screening results into the flash memory particles.
In some embodiments, the first writing and reading process and the second writing and reading process in the present application are all complete erasing and writing processes including erasing, reading, writing, and the like.
In some embodiments, the structure inside each chip is truly hierarchical, as follows:
chip (clip): one particle may contain one or more chips;
block (Block): each ch ip has a plurality of b locks;
page (Page): a plurality of pages are arranged in each b lock;
codeword (Codeword): each page comprises a plurality of codewords;
in some embodiments, the maximum error correction capability per grain is fixed, meaning that the error correction algorithm has an upper limit on the number of bits that are erroneous. Beyond this upper limit, the error correction algorithm may not be able to restore the data to a correct state, and thus, when designing the storage system, it is necessary to fully consider environmental factors and error correction capability, and ensure reliability and stability of the data, and the maximum ECC in the present application corresponds to the maximum error correction capability of each granule.
In some embodiments, in the read/write operation of the present invention, the erase operation is performed in units of b lock, and the read/write operation is performed in units of page.
In some embodiments, the present invention obtains the read-write temperature range of the flash memory particle to be detected, where the read-write temperature range refers to the lowest and highest temperature ranges that the flash memory particle can bear in the normal working state, and in this temperature range, the flash memory particle can normally perform data erasing read-write operation, so that the high temperature writing, high temperature reading and high temperature writing, and low temperature reading processing can be effectively performed on the flash memory particle in the subsequent process, and meanwhile, at high temperature, the stability of the same temperature reading and writing is better than that of the cross temperature reading and writing, so that the present invention has a lower ECC threshold value for high temperature writing, high temperature reading and limiting, and a higher ECC threshold value for high temperature writing, low temperature reading and limiting.
In some embodiments, the bathtub curve model is used to describe the failure rate of a product over time, and is divided into three phases: early failure, normal life and wear failure stages, wherein the early failure stage is the early stage of the product just put into use, and the failure rate of part of the product is higher due to defects, design problems or poor materials in the manufacturing process and the like; the normal life stage is the stage of normal life of the product after the bad products are eliminated through the early failure stage.
The flash memory particles also accord with the early use condition in the model, so that the flash memory particles possibly have higher failure rate when being erased and read for the first time, and the failure rate of the flash memory particles is relatively stable and reduced after the flash memory particles are subjected to a certain number of erasing and reading operations, so that the flash memory particles can show more stable reading and writing performance at the stage.
In some embodiments, the early failure test data and the granule screening result are used to determine whether the plurality of blocks in the flash granule are bad blocks or good performance blocks, and in the subsequent step, the flash granule may be classified according to the number ratio of the bad blocks and the good performance blocks in the flash granule.
According to the steps S110 to S130, it can be seen that the present invention provides a multiple screening method for flash memory particles based on ECC, which aims to write (store) data into flash memory particles and then read (acquire) the data, simulate early failure conditions possibly encountered by flash memory particles in actual use by performing multiple erasure and reading operations, and screen and mark particles meeting the conditions according to certain specific conditions (such as an ECC threshold in the present invention) in the flash memory particles, so as to distinguish flash memory particles with different quality or performance, thereby improving accuracy of screening results and grading quality control; the method has the advantages that early failure is simulated through repeated erasing and reading and screening mark processing, the accuracy of the screening result is improved, and in addition, in the process of multiple screening, the method can limit the ECC threshold value for screening particles, thereby controlling the quality level of the particle screening result and better meeting the personalized requirements of users. The method is beneficial to improving the grading quality control of the flash memory particles and ensuring the accuracy of screening results.
Referring to fig. 2, fig. 2 is a flowchart illustrating a screening marking process according to another embodiment of the present invention to obtain early failure experimental data; in some embodiments, the first write-read process is a high-temperature write-read process, and the flash memory grain is subjected to a plurality of first write-read processes according to a read-write temperature range to simulate early failure of the flash memory grain, and in each first write-read process, a plurality of blocks in the flash memory grain are subjected to a screening mark process according to a maximum ECC to obtain early failure experimental data, including but not limited to the following steps:
step S210, determining a first ECC threshold and a second ECC threshold according to the maximum ECC, the first preset proportion and the second preset proportion, wherein the first ECC threshold is larger than the second ECC threshold;
step S220, determining a first writing temperature and a first reading temperature according to the reading-writing temperature range;
step S230, performing high-temperature writing and high-temperature reading processing on the flash memory particles for a plurality of times according to the first writing temperature and the first reading temperature to simulate early failure of the flash memory particles, and performing screening marking processing on a plurality of blocks in the flash memory particles according to the first ECC threshold and the second ECC threshold in the process of each high-temperature writing and high-temperature reading processing to obtain a plurality of screening result data;
Step S240, early failure experimental data is obtained according to the intersection of a plurality of screening results.
In some embodiments, the first write temperature and the first read temperature are consistent.
In some embodiments, the step S210 to the step S240 may effectively limit the ECC threshold used for screening the granules, so as to control quality control of the granule screening result, and further better meet the personalized requirement of the user, specifically, determine the product of the maximum ECC and the first preset proportion as the first ECC threshold, determine the product of the maximum ECC and the second preset proportion as the second ECC threshold, and set the first preset proportion and the second preset proportion according to the user requirement, so as to control the step of performing screening marking processing on the plurality of blocks in the flash memory granule according to the first ECC threshold and the second ECC threshold according to the reference, and further enable the obtained screening result to better meet the personalized requirement of the user.
In some embodiments, performing a screening flag process on a plurality of blocks in a flash memory granule according to a first ECC threshold and a second ECC threshold includes: in the process of each high-temperature writing and high-temperature reading process, screening and marking the current target block according to the first ECC threshold and the second ECC threshold to mark the current target block as a good-performance block or a bad block, and after marking, screening and marking the next target block again until each block in the flash memory particles is traversed; wherein the current target block and the next target block are both unlabeled blocks.
Referring to fig. 3, fig. 3 is a flowchart illustrating a screening marking process for a current target block according to a first ECC threshold and a second ECC threshold according to another embodiment of the present invention; in some embodiments, the current target block is subjected to a screening marking process according to a first ECC threshold and a second ECC threshold to mark the current target block as a good performing block or a bad block, including, but not limited to, the following steps:
step S310, performing data erasure processing on the current target block, and marking the current target block as a bad block under the condition of erasure failure;
step S320, performing write data processing on the current target block under the condition that the erasure is successful, and marking the current target block as a bad block under the condition that the write data fails;
step S330, under the condition that the data writing is successful, the data reading processing is carried out on the current target block so as to obtain the maximum error bit number;
step S340, marking the current target block as a bad block under the condition that the maximum error bit number is larger than a first ECC threshold; if the maximum number of error bits is less than or equal to the first ECC threshold and the maximum number of error bits is greater than the second ECC threshold, not marking the current target block; in the case where the maximum number of error bits is less than or equal to the second ECC threshold, the current target block is marked as a good performing block.
Specifically, the first preset proportion is 80%, the second preset proportion is 30%, the first ECC threshold is used for directly marking a block with a maximum number of error bits greater than the threshold as a bad block, the second ECC threshold is used for directly marking a block with a maximum number of error bits smaller than the threshold as a good-performance block, marking is not performed when the maximum number of error bits is between the first ECC threshold and the second ECC threshold, and the subsequent erasing and reading processing also performs screening marking processing on only the unmarked block, so as to improve the screening speed.
It is conceivable that if the maximum number of erroneous bits for a block is above the first ECC threshold, then this indicates that the block performance cannot meet the standard regardless of the presence of the effect of the early use, and is therefore marked as a bad block directly; similarly, if the maximum error bit number of a block is lower than the second ECC threshold, the block performance reaches the standard no matter whether the influence of the prior use exists or not, so that the block is directly marked as a block with good performance; for each block with the maximum error bit number between the first ECC threshold and the second ECC threshold, the screening marks are carried out one by one after the influence of the prior use is overcome by the multiple erasing and reading processes, so that the screening precision is effectively improved.
Specifically, in some embodiments, the method performs 10 first writing and reading processes on the flash memory particles according to the reading and writing temperature range so as to simulate early failure of the flash memory particles, and 10 times is a preferred value of the method, and the method is used for completing the simulated early failure experiment, and circularly repeating ten rounds, so that the efficiency of the screening method can be ensured while the accuracy of the acquired early failure experiment data is effectively ensured, and the normal service life of the flash memory particles is not influenced.
Referring to fig. 4, fig. 4 is a flowchart illustrating a screening marking process according to another embodiment of the present invention to obtain a particle screening result; in some embodiments, the second write-read process includes a high temperature write-read process, the second write-read process is performed on the flash memory grain according to the read-write temperature range, and during the second write-read process, a screening marking process is performed on a plurality of blocks in the flash memory grain according to early failure experimental data and a maximum ECC, so as to obtain a grain screening result, including but not limited to the following steps:
step S410, determining a first ECC threshold and a second ECC threshold according to the maximum ECC, the first preset proportion and the second preset proportion, wherein the first ECC threshold is larger than the second ECC threshold;
step S420, determining a second writing temperature and a second reading temperature according to the reading-writing temperature range;
and step S430, performing high-temperature writing and high-temperature reading processing on the flash memory particles according to the second writing temperature and the second reading temperature, and performing screening marking processing on a plurality of blocks in the flash memory particles according to early failure experimental data, the first ECC threshold and the second ECC threshold in the high-temperature writing and high-temperature reading processing process to obtain particle screening results.
In some embodiments, after the simulated early failure experiment is completed, the subsequent classification flow continues based on the results of the early failure experiment. The subsequent classification flow includes two stages (high temperature writing and high temperature reading, high temperature writing and low temperature reading), and first high temperature writing and high temperature reading are performed (corresponding to step S410 to step S430).
Referring to fig. 5, fig. 5 is a flowchart illustrating a screening and marking process for a plurality of blocks in a flash memory granule according to early failure experimental data, a first ECC threshold and a second ECC threshold according to another embodiment of the present invention; in some embodiments, including but not limited to the following steps:
step S510, determining a plurality of unlabeled blocks from a plurality of blocks according to early failure experimental data;
step S520, performing data erasure processing on the current unmarked block, and marking the current unmarked block as a bad block under the condition of erasure failure;
step S530, carrying out data writing processing on the current unmarked block under the condition that the erasure is successful, and marking the current unmarked block as a bad block under the condition that the data writing fails;
step S540, under the condition that the data writing is successful, the current unmarked block is subjected to data reading processing so as to obtain the maximum error bit number;
step S550, marking the current unmarked block as a bad block under the condition that the maximum error bit number is larger than the first ECC threshold; under the condition that the maximum error bit number is smaller than or equal to the first ECC threshold and the maximum error bit number is larger than the second ECC threshold, marking the current unmarked block is not carried out; marking the currently unmarked block as a good performing block if the maximum number of error bits is less than or equal to the second ECC threshold;
Step S560, after the marking process is completed, the next unmarked block is subjected to screening marking process again until each unmarked block in the flash memory granule is traversed.
In some embodiments, specifically, the first preset proportion is 80%, the second preset proportion is 30%, the first ECC threshold is used to directly mark a block with a maximum number of error bits greater than the threshold as a bad block, the second ECC threshold is used to directly mark a block with a maximum number of error bits less than the threshold as a good block, the maximum number of error bits is between the first ECC threshold and the second ECC threshold and is not marked, and the subsequent erasure and reading process also performs screening marking processing on only the unmarked block, so as to improve screening efficiency.
Referring to fig. 6, fig. 6 is a flowchart illustrating a low temperature read process according to another embodiment of the present invention; in some embodiments, the screening marking process is performed on the plurality of blocks in the flash memory grain according to the early failure experimental data, the first ECC threshold and the second ECC threshold, the second write-read process further includes a high temperature write-read process, and after the screening marking process is performed on the plurality of blocks in the flash memory grain according to the early failure experimental data, the first ECC threshold and the second ECC threshold, the method further includes, but is not limited to, the following steps:
Step S610, determining a third ECC threshold according to the maximum ECC and a third preset ratio, wherein the third ECC threshold is larger than the first ECC threshold;
step S620, determining a third reading temperature according to the reading-writing temperature range, wherein the third reading temperature is smaller than the second reading temperature;
step S630, performing low-temperature reading processing on the flash memory particles according to the third reading temperature, and performing screening marking processing on a plurality of blocks in the flash memory particles according to the screening marking result of the high-temperature writing high-temperature reading processing and the third ECC threshold in the process of the high-temperature reading processing to obtain a particle screening result.
In some embodiments, performing screening marking processing on a plurality of blocks in the flash memory particle according to screening marking results of high-temperature writing and high-temperature reading processing and a third ECC threshold, wherein the screening marking processing comprises determining a plurality of unmarked blocks from the plurality of blocks according to the screening marking results; reading data processing is carried out on the current unmarked block so as to obtain the maximum error bit number; marking the current unmarked block as a run-time bad block if the maximum number of error bits is greater than a third ECC threshold; and under the condition that the maximum error bit number is smaller than or equal to the third ECC threshold, screening and marking the next unmarked block again until each unmarked block in the flash memory granule is traversed.
Specifically, the third preset proportion is 90%, the third ECC threshold is the product of the maximum ECC and the third preset proportion, and the third ECC threshold is used for screening and detecting the block during low-temperature reading, because the cross-temperature reading and writing are often stricter compared with the same-temperature reading and writing, if the maximum error bit number exceeds the third ECC threshold, the block is marked as a bad block during operation, so that a scene of high-temperature writing and low-temperature reading is completed, and a particle screening result required by the whole grading flow is obtained by combining the scene of high-temperature writing and high-temperature reading.
Referring to fig. 7, fig. 7 is a specific flowchart illustrating an early failure simulation experiment in an ECC-based flash memory granule multi-screening method according to another embodiment of the present invention; in some embodiments, the specific process of simulating early failure experiments is as follows, if the ECC error correction capability of a particle is 140byte/2K, which indicates that the maximum number of bits of the particle is 140byte when the particle reads 2K data, that is, the maximum ECC (maximum error correction capability) of the particle is 140, for a commercial product, it is important to ensure data security, in early stages of experiments, bathtub curve experiments can be simulated first, 10 high-temperature writing and high-temperature reading experiments are performed on the specification of the commercial product, if the product temperature specification (read-write temperature range) is-25 ℃ to 85 ℃, 85-degree writing and 85-degree reading are performed in 85 ℃, ten times are performed, each time data is read, the ECC of the read data is set to 80% of the maximum error correction capability, that is, 112, so when the data is read, if the maximum number of error bits in each page is greater than 112, the b lock is marked as a bad block in early stage of operation, (erasing failure is marked as a bad block in early stage of operation), next operation is not performed, and next cycle of experiments are performed, and the next cycle of experiments are repeated, and the result is obtained after the next cycle of experiments are performed.
Referring to fig. 8, in the ECC-based flash memory granule multiple screening method according to another embodiment of the present invention shown in fig. 8, a specific flowchart of high temperature writing and high temperature reading is shown; in some embodiments, the specific process of writing at high temperature and reading at high temperature is as follows, and after the simulation of the early failure experiment is completed, the subsequent classification flow is continued based on the result of the early failure experiment. The subsequent grading flow comprises two stages (high temperature writing and high temperature reading and high temperature writing and low temperature reading), namely, the high temperature writing and high temperature reading are firstly carried out, the data reading process is mainly controlled in a clamping way, and the data erasing process is carried out, the high temperature writing and high temperature reading and card controlling ECC is 80% of the maximum error correction capability, namely, 112, if the ECC exceeds 112, the ECC is marked as a newly increased bad block, the operation is not carried out in the subsequent step, and the erasure fails; meanwhile, a condition is added to the scene, if the maximum error bit number of the block is not more than 30% of the maximum error bit number allowed by ECC, the block needs to be marked out as a block with better performance, the subsequent scene does not need to test the block, and the high-temperature writing and high-temperature reading of the first test scene are completed.
Referring to fig. 9, a specific flow chart of low-temperature reading in the ECC-based flash memory granule multiple screening method according to another embodiment of the present invention shown in fig. 9 is shown; in some embodiments, the specific process of low-temperature reading is as follows, only data is needed to be read at this stage, the last round of operation is completed without erasing the written user data, and the blocks of the round of operation need to exclude bad blocks in the running of the last round and good blocks with better performance; high temperature writing low temperature reading sets the threshold to 90% because cross temperature reading and writing tends to be more stringent than co-temperature reading and writing, if the ECC exceeds 90%, then it will be marked as a run-time bad block. Because only two operation scenes are made, so far, high-temperature writing and low-temperature reading are obtained. The results required for the whole classification procedure are also obtained.
Referring to fig. 10, fig. 10 is a schematic structural diagram of a controller according to an embodiment of the present invention.
Some embodiments of the present invention provide a controller including a memory, a processor, and a computer program stored on the memory and executable on the processor, the processor implementing the ECC-based flash memory granule multiple screening method of any of the above embodiments when executing the computer program, for example, performing the method steps S110 to S130 in fig. 1, the method steps S210 to S240 in fig. 2, the method steps S310 to S340 in fig. 3, the method steps S410 to S430 in fig. 4, the method steps S510 to S560 in fig. 5, and the method steps S610 to S630 in fig. 6 described above.
The controller 1000 of the present embodiment includes one or more processors 1010 and a memory 1020, one processor 1010 and one memory 1020 being illustrated in fig. 10.
The processor 1010 and the memory 1020 may be connected by a bus or otherwise, for example in fig. 10.
Memory 1020 is a non-transitory computer readable storage medium that may be used to store non-transitory software programs as well as non-transitory computer executable programs. In addition, memory 1020 may include high-speed random access memory and may also include non-transitory memory, such as at least one magnetic disk storage device, flash memory device, or other non-transitory solid state storage device. In some embodiments, memory 1020 optionally includes memory 1020 located remotely from processor 1010, which may be connected to controller 1000 via a network, examples of which include, but are not limited to, the internet, intranets, local area networks, mobile communication networks, and combinations thereof.
In some embodiments, the processor executes the computer program to perform the ECC-based flash memory granule multiple screening method of any one of the above embodiments at preset intervals.
Those skilled in the art will appreciate that the device structure shown in fig. 10 is not limiting of the controller 1000 and may include more or fewer components than shown, or may combine certain components, or a different arrangement of components.
In the controller 1000 shown in fig. 10, the processor 1010 may be configured to invoke the ECC-based flash granule multiple screening method stored in the memory 1020, thereby implementing the ECC-based flash granule multiple screening method.
Based on the hardware structure of the controller 1000, various embodiments of the ECC-based flash granule multiple screening system of the present invention are presented, and at the same time, a non-transitory software program and instructions required to implement the ECC-based flash granule multiple screening method of the above embodiments are stored in a memory, and when executed by a processor, the ECC-based flash granule multiple screening method of the above embodiments is executed.
In addition, the embodiment of the invention also provides an ECC-based flash memory granule multiple screening system, which comprises the controller.
In some embodiments, since the ECC-based flash granule multi-time screening system of the present invention has the controller of the above embodiment, and the controller of the above embodiment is capable of executing the ECC-based flash granule multi-time screening method of the above embodiment, the specific implementation and technical effects of the ECC-based flash granule multi-time screening system of the present invention may refer to the specific implementation and technical effects of the ECC-based flash granule multi-time screening method of any one of the above embodiments, so that the screening result can effectively reflect the normal performance of the granule, thereby improving the accuracy of the screening result and the grading quality control of the flash granule; in the process of multiple screening, the method can limit the ECC threshold for screening the particles so as to control the quality control of the particle screening result, thereby better meeting the personalized requirements of users.
The embodiment of the present invention also provides a computer-readable storage medium storing computer-executable instructions for performing the above-described ECC-based flash memory granule multiple screening method, for example, the one or more processors may be caused to perform the ECC-based flash memory granule multiple screening method in the above-described method embodiment, and perform the above-described method steps S110 to S130 in fig. 1, the method steps S210 to S240 in fig. 2, the method steps S310 to S340 in fig. 3, the method steps S410 to S430 in fig. 4, the method steps S510 to S560 in fig. 5, and the method steps S610 to S630 in fig. 6.
The above described apparatus embodiments are merely illustrative, wherein the units illustrated as separate components may or may not be physically separate, i.e. may be located in one place, or may be distributed over a plurality of network nodes. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment.
Those of ordinary skill in the art will appreciate that all or some of the steps, systems, and methods disclosed above may be implemented as software, firmware, hardware, and suitable combinations thereof. Some or all of the physical components may be implemented as software executed by a processor, such as a central processing unit, digital signal processor, or microprocessor, or as hardware, or as an integrated circuit, such as an application specific integrated circuit. Such software may be distributed on computer readable media, which may include computer readable storage media (or non-transitory media) and communication media (or transitory media). The term computer-readable storage medium includes volatile and nonvolatile, removable and non-removable media implemented in any method or technology for storage of information, such as computer-readable instructions, data structures, program modules or other data, as known to those skilled in the art. Computer-readable storage media includes, but is not limited to, RAM, ROM, EEPROM, flash memory or other memory technology, CD-ROM, digital Versatile Disks (DVD) or other optical disk storage, magnetic cassettes, magnetic tape, magnetic disk storage or other magnetic storage devices, or any other medium which can be used to store the desired information and which can be accessed by a computer. Furthermore, as is well known to those of ordinary skill in the art, communication media typically embodies computer readable instructions, data structures, program modules or other data in a modulated data signal such as a carrier wave or other transport mechanism and includes any information delivery media.
While the preferred embodiment of the present invention has been described in detail, the present invention is not limited to the above embodiment, and those skilled in the art can make various equivalent modifications or substitutions without departing from the spirit of the present invention, and these equivalent modifications or substitutions are included in the scope of the present invention as defined in the appended claims.
Claims (10)
1. An ECC-based flash memory granule multiple screening method, the method comprising:
acquiring specification information of flash memory particles to be detected, wherein the specification information comprises a maximum ECC (error correction code) and a read-write temperature range;
performing multiple first writing and reading processes on the flash memory particles according to the reading and writing temperature range to simulate early failure of the flash memory particles, and performing screening marking process on a plurality of blocks in the flash memory particles according to the maximum ECC in the process of each first writing and reading process to obtain early failure experimental data, and writing the early failure experimental data into the flash memory particles;
and performing second writing and reading processing on the flash memory particles according to the reading and writing temperature range, and performing screening marking processing on a plurality of blocks in the flash memory particles according to the early failure experimental data and the maximum ECC in the second writing and reading processing process to obtain particle screening results, and writing the particle screening results into the flash memory particles.
2. The method of claim 1, wherein the first write-read process is a high-temperature write-read process, the first write-read process is performed on the flash memory grain multiple times according to the read-write temperature range to simulate early failure of the flash memory grain, and in each first write-read process, the screening marking process is performed on a plurality of blocks in the flash memory grain according to the maximum ECC to obtain early failure experimental data, and the method comprises:
determining a first ECC threshold and a second ECC threshold according to the maximum ECC, a first preset proportion and a second preset proportion, wherein the first ECC threshold is larger than the second ECC threshold;
determining a first writing temperature and a first reading temperature according to the reading-writing temperature range;
performing high-temperature writing and high-temperature reading processing on the flash memory particles for multiple times according to the first writing temperature and the first reading temperature to simulate early failure of the flash memory particles, and performing screening marking processing on a plurality of blocks in the flash memory particles according to the first ECC threshold and the second ECC threshold in the process of each high-temperature writing and high-temperature reading processing to obtain a plurality of screening result data;
And obtaining early failure experimental data according to the intersection of a plurality of screening results.
3. The ECC-based flash memory granule multiple screening method of claim 2, wherein performing screening flag processing on a plurality of blocks in the flash memory granule according to the first ECC threshold and the second ECC threshold comprises:
in the process of each high-temperature writing and high-temperature reading process, screening and marking the current target block according to the first ECC threshold and the second ECC threshold to mark the current target block as a good-performance block or a bad block, and after marking, carrying out screening and marking process on the next target block again until each block in the flash memory particles is traversed;
wherein the current target block and the next target block are both unmarked blocks.
4. The ECC-based flash memory granule multiple screening method of claim 3, wherein performing screening marking processing on a current target block according to the first ECC threshold and the second ECC threshold to mark the current target block as a good performing block or a bad performing block comprises:
performing data erasure processing on the current target block, and marking the current target block as a bad block under the condition of erasure failure;
Carrying out data writing processing on the current target block under the condition that the erasure is successful, and marking the current target block as a bad block under the condition that the data writing fails;
under the condition that the data writing is successful, carrying out data reading processing on the current target block so as to obtain the maximum error bit number;
marking a current target block as a bad block if the maximum number of error bits is greater than the first ECC threshold; if the maximum number of error bits is less than or equal to the first ECC threshold and the maximum number of error bits is greater than the second ECC threshold, not marking the current target block; and marking the current target block as a good-performance block under the condition that the maximum error bit number is smaller than or equal to the second ECC threshold.
5. The ECC-based flash memory granule multiple screening method according to claim 1, wherein the second writing and reading process includes a high-temperature writing and high-temperature reading process, the second writing and reading process is performed on the flash memory granule according to the reading and writing temperature range, and during the second writing and reading process, screening and marking processes are performed on a plurality of blocks in the flash memory granule according to the early failure experimental data and the maximum ECC, so as to obtain a granule screening result, including:
Determining a first ECC threshold and a second ECC threshold according to the maximum ECC, a first preset proportion and a second preset proportion, wherein the first ECC threshold is larger than the second ECC threshold;
determining a second writing temperature and a second reading temperature according to the reading-writing temperature range;
and performing high-temperature writing and high-temperature reading processing on the flash memory particles according to the second writing temperature and the second reading temperature, and performing screening marking processing on a plurality of blocks in the flash memory particles according to the early failure experimental data, the first ECC threshold and the second ECC threshold in the high-temperature writing and high-temperature reading processing process to obtain particle screening results.
6. The ECC-based flash memory granule multiple screening method of claim 5, wherein the screening marking of the plurality of blocks in the flash memory granule according to the early failure experimental data, the first ECC threshold, and the second ECC threshold comprises:
determining a plurality of unlabeled blocks from a plurality of blocks according to the early failure experimental data;
performing data erasure processing on the current unmarked block, and marking the current unmarked block as a bad block under the condition of erasure failure;
Carrying out data writing processing on the current unmarked block under the condition that the erasure is successful, and marking the current unmarked block as a bad block under the condition that the data writing fails;
under the condition of successful data writing, carrying out data reading processing on the current unmarked block so as to obtain the maximum error bit number;
marking a currently unmarked block as a bad block if the maximum number of error bits is greater than the first ECC threshold; if the maximum number of error bits is less than or equal to the first ECC threshold and the maximum number of error bits is greater than the second ECC threshold, not marking the current unmarked block; marking the current unmarked block as a good performing block if the maximum number of error bits is less than or equal to the second ECC threshold;
and after the marking process is finished, screening and marking the next unmarked block again until each unmarked block in the flash memory particle is traversed.
7. The ECC-based flash memory grain multiple screening method of claim 1, wherein the second write-read process further comprises a high-temperature write-read-low-temperature process, the method further comprising, after screening marking the plurality of blocks in the flash memory grain according to the early failure experimental data, the first ECC threshold, and the second ECC threshold:
Determining a third ECC threshold according to the maximum ECC and a third preset proportion, wherein the third ECC threshold is larger than the first ECC threshold;
determining a third reading temperature according to the reading-writing temperature range, wherein the third reading temperature is smaller than the second reading temperature;
and performing low-temperature reading treatment on the flash memory particles according to the third reading temperature, and performing screening marking treatment on a plurality of blocks in the flash memory particles according to the screening marking result of the high-temperature writing high-temperature reading treatment and the third ECC threshold in the high-temperature reading treatment process to obtain a particle screening result.
8. The ECC-based flash memory granule multiple screening method according to claim 7, wherein the performing screening flag processing on the plurality of blocks in the flash memory granule according to the screening flag result of the high-temperature writing and high-temperature reading processing and the third ECC threshold value comprises:
determining a plurality of unmarked blocks from a plurality of blocks according to the screening marking result;
reading data processing is carried out on the current unmarked block so as to obtain the maximum error bit number;
marking the current unmarked block as a run-time bad block if the maximum number of error bits is greater than the third ECC threshold; and under the condition that the maximum error bit number is smaller than or equal to the third ECC threshold, screening and marking the next unmarked block again until each unmarked block in the flash memory granule is traversed.
9. A controller comprising a memory, a processor and a computer program stored on the memory and executable on the processor, the processor implementing the ECC-based flash memory granule multiple screening method of any one of claims 1 to 8 when the computer program is executed.
10. A computer readable storage medium storing computer executable instructions for performing the ECC-based flash memory granule multiple screening method of any one of claims 1 to 8.
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