CN116953918B - Preparation method of MEMS micro-mirror array - Google Patents
Preparation method of MEMS micro-mirror array Download PDFInfo
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- CN116953918B CN116953918B CN202311193462.5A CN202311193462A CN116953918B CN 116953918 B CN116953918 B CN 116953918B CN 202311193462 A CN202311193462 A CN 202311193462A CN 116953918 B CN116953918 B CN 116953918B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 238000000151 deposition Methods 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000005530 etching Methods 0.000 claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 52
- 229910052710 silicon Inorganic materials 0.000 claims description 52
- 239000010703 silicon Substances 0.000 claims description 52
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 46
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 239000011368 organic material Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 7
- 238000003384 imaging method Methods 0.000 abstract description 5
- 230000009471 action Effects 0.000 abstract description 3
- 230000008569 process Effects 0.000 description 10
- 244000126211 Hericium coralloides Species 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Micromachines (AREA)
Abstract
The invention provides a preparation method of an MEMS micro mirror array, which comprises the following steps: s1, arranging a substrate on the surface of a read-out circuit board; s2, depositing a sacrificial layer on the surface of the substrate, and etching a through hole on the surface of the sacrificial layer; s3, depositing a mirror surface connected with the readout circuit board on the surface of the sacrificial layer to obtain the MEMS micro-mirror; s4, etching the MEMS micromirrors to obtain micromirror units arranged in an array manner; and S5, removing the sacrificial layer to obtain the MEMS micro-mirror array. According to the method, the array arrangement is realized through the independent connection of the read-out circuit board and each micro mirror unit, the deflection of each micro mirror unit can be independently controlled, the required deflection angle can be met under the action of smaller electrostatic driving force, the use flexibility degree and effect of the product are improved, in addition, the micro mirror array with smaller torsional rigidity is prepared through the arrangement of the sacrificial layer, the filling rate of the mirror surface is improved, and the micro mirror unit can show better imaging effect.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a preparation method of an MEMS micro mirror array.
Background
The MEMS micro-mirror is a chip-level optical device prepared based on a micro-machining process, and when the MEMS micro-mirror array is used for optical exchange, the MEMS micro-mirror array has the advantages of low loss, low crosstalk, low polarization sensitivity, high extinction ratio, high switching speed, small volume, easiness in large-scale integration and the like of a waveguide switch, so that the MEMS micro-mirror array switch exchange technology is widely applied to the fields of backbone networks or large-scale exchange networks and the like.
MEMS micromirrors are micro-devices whose mirror surfaces are deflectable along a torsion axis, and common driving methods for micromirrors include electrostatic driving, electromagnetic driving, electrothermal driving, and piezoelectric driving. The electrostatic driven MEMS micro mirror realizes the deflection of the mirror surface by utilizing electrostatic force, and the advantages of relatively simple manufacturing process, low cost and the like attract a plurality of researchers to continuously research and innovate the mirror surface.
With the rapid development of technology, the consumer market puts forward higher development requirements on the MEMS micro-mirror, and particularly the MEMS micro-mirror has huge development space in the fields of imaging display and the like. The common MEMS micro-mirrors are mainly divided into one-dimensional micro-mirrors and two-dimensional micro-mirrors, the one-dimensional micro-mirrors are widely applied to the fields of optical communication and the like, the two-dimensional micro-mirrors have wide application markets in the fields of imaging display and the like, and the market demands of the MEMS micro-mirrors are continuously increased along with the continuous improvement of the data transmission efficiency of people.
The MEMS micro-mirror is mainly prepared by a bulk micro-machining process, but the micro-mirror prepared by the process is difficult to array, and because the torsional beam has larger rigidity, more comb teeth are needed to ensure enough electrostatic force so as to meet the deflection of the micro-mirror.
Disclosure of Invention
Therefore, the technical problem to be solved by the invention is to overcome the problems that the MEMS micro mirror prepared by the bulk micro processing technology in the prior art has large electrostatic driving force and small deflection angle, and each micro mirror unit can not independently control deflection, and provide a preparation method of the MEMS micro mirror array.
In order to solve the technical problems, the invention provides a preparation method of an MEMS micro mirror array, which comprises the following steps: s1, arranging a substrate on the surface of a read-out circuit board; s2, depositing a sacrificial layer on the surface of the substrate, and etching and depositing a through hole on the surface of the sacrificial layer; s3, depositing a mirror surface connected with the readout circuit board on the surface of the sacrificial layer to obtain an MEMS micro mirror; s4, etching the MEMS micromirrors to obtain micromirror units in array arrangement; and S5, removing the sacrificial layer to obtain the MEMS micro mirror array.
In one embodiment of the present invention, the step S1 specifically includes the following steps: s11, depositing a first conductive metal film on the surface of the readout circuit board; and S12, depositing a first silicon layer on the surface of the first conductive metal film, and transmitting an electric signal to the first silicon layer through the first conductive metal film by the read-out circuit board to obtain the substrate.
In one embodiment of the present invention, the patterning process is performed on both the first silicon layer and the first conductive metal film in step 1.
In one embodiment of the invention, the sacrificial layer is an organic material.
In one embodiment of the invention, barrel-shaped through holes are etched in the surface of the sacrificial layer.
In one embodiment of the present invention, step S3 is specifically as follows: and etching the second silicon layer after depositing the second silicon layer on the surface of the sacrificial layer until the readout circuit board is exposed, and sequentially depositing a second conductive metal film, a stress adjusting layer and a reflecting layer, wherein the readout circuit board is connected with the second conductive metal film and transmits an electric signal to the second silicon layer.
In one embodiment of the present invention, the stress adjustment layer includes a silicon oxide layer and a silicon nitride layer sequentially deposited on the surface of the second conductive metal film.
In one embodiment of the present invention, the reflective layer substrate is a metal.
Compared with the prior art, the technical scheme of the invention has the following advantages:
according to the preparation method of the MEMS micro mirror array, the readout circuit board is independently connected with each micro mirror unit to realize the array arrangement, meanwhile, each micro mirror unit can independently control the deflection of the micro mirror unit, the application range of the micro mirror array is widened, the deflection angle of the micro mirror array can be increased under the action of smaller electrostatic driving force by combining with the special structure arrangement, the operation complexity of the micro mirror array is reduced, the use flexibility degree and effect of the MEMS micro mirror are further improved, the micro mirror array has a considerable use prospect, in addition, the micro mirror array with smaller torsional rigidity is prepared through the arrangement of the sacrificial layer, the mirror filling rate is increased through comb-tooth type mirror arrangement, and the higher micro mirror reflectivity and a large number of micro mirror units can show better imaging effect.
Drawings
In order that the invention may be more readily understood, a more particular description of the invention will be rendered by reference to specific embodiments thereof that are illustrated in the appended drawings.
FIG. 1 is a schematic perspective view of a micromirror in a preferred embodiment of the invention;
FIG. 2 is a front view of the micromirror in FIG. 1;
FIG. 3 is a left side view of the micromirror in FIG. 1;
FIG. 4 is a schematic diagram of the mirror layer structure distribution;
FIG. 5 is a schematic diagram of the distribution of anchor post layer structures;
FIG. 6 is an enlarged schematic view of FIG. 5 at A;
FIG. 7 is a schematic diagram of a substrate layer structure distribution;
FIG. 8 is a diagram of an array of a plurality of micromirrors in an embodiment of the invention;
FIG. 9 is a schematic view showing the degree of displacement of the micromirror surface of FIG. 1.
Description of the specification reference numerals: 100. a mirror surface; 110. a main body portion; 120. a connection part; 121. a torsion beam; 122. an anchor post; 130. a second silicon layer; 140. a second conductive metal film; 150. a stress adjustment layer; 151. a silicon dioxide layer; 152. a silicon nitride layer; 160. a reflective layer; 200. a substrate; 210. a first silicon layer; 220. a first conductive metal film; 230. a first substrate; 240. a second substrate; 300. a read-out circuit board;
Detailed Description
The present invention will be further described with reference to the accompanying drawings and specific examples, which are not intended to be limiting, so that those skilled in the art will better understand the invention and practice it.
Example 1
The micro mirror prepared by the method can independently control deflection of each micro mirror unit, so that the micro mirror has a considerable use prospect, and the micro mirror array with smaller torsional rigidity is prepared by the method through the arrangement of the sacrificial layer.
The embodiment mainly comprises the following steps:
s1, arranging a substrate on the surface of a read-out circuit board, and specifically, the method comprises the following steps:
s11, sequentially depositing a first conductive metal film and a first silicon layer on the surface of the readout circuit board, wherein patterning treatment is needed to be carried out on the first silicon layer and the first conductive metal film in the process so as to form electrode isolation;
and S12, depositing a first silicon layer on the surface of the first conductive metal film to obtain a substrate, and transmitting an electric signal to the first silicon layer through the first conductive metal film by the read-out circuit board. In this embodiment, the first conductive metal film substrate deposited on the surface of the readout circuit board is titanium, the first silicon layer is preferably monocrystalline silicon, and after the first silicon layer is deposited, a patterned photolithography process is required on the surface of the first silicon layer to facilitate subsequent operations.
S2, arranging a sacrificial layer on the surface of the substrate, and etching through holes on the surface of the sacrificial layer, wherein in the embodiment, the sacrificial layer is a Polyimide (PI) layer, and the thickness of the coated sacrificial layer is related to the driving voltage and the torsion angle of the micromirror, so that the thickness of the coated sacrificial layer can be adjusted according to the actual application requirements in the actual preparation process, specifically, the thicker the coated sacrificial layer is, the larger the driving voltage of the micromirror is, the larger the deflection angle range is, and conversely, the smaller the deflection angle is. Further, the through holes etched on the surface of the sacrificial layer are barrel-shaped through holes with large upper openings and small lower openings, and the structural design can enable the surface of the subsequent deposition layer to have higher uniformity and flatness, so that the subsequent deposition layer has better connection effect with the mirror surface.
S3, arranging a mirror surface connected with the readout circuit board on the surface of the sacrificial layer to obtain the MEMS micro-mirror, wherein the method specifically comprises the following steps:
s31, a second silicon layer, a second conductive metal film, a stress adjusting layer and a reflecting layer are sequentially arranged on the surface of the sacrificial layer, specifically, in the embodiment, the second silicon layer is monocrystalline silicon, the second silicon layer can be uniformly deposited on the surface of the second silicon layer through holes formed in the surface etching deposition of the sacrificial layer, the second conductive metal film is a titanium layer, the stress adjusting layer comprises a silicon dioxide layer and a silicon nitride layer which are sequentially arranged on the surface of the second conductive metal film, and a reflecting layer substrate is metal.
S32, etching the second silicon layer until the readout circuit board is exposed, and then depositing a second conductive metal film, wherein the readout circuit board is connected with the second conductive metal film and transmits an electric signal to the second silicon layer. In this embodiment, the second conductive metal film is deposited after etching the second silicon layer, so that the second conductive metal film contacts the readout circuit board.
S4, etching the MEMS micromirrors to obtain micromirror units in array arrangement, and particularly, dividing the micromirror array through an etching process to obtain the comb-tooth type micromirror array capable of being controlled independently.
S5, removing the sacrificial layer to obtain the MEMS micro-mirror array, wherein the sacrificial layer is removed in a physicochemical combination mode in the embodiment, specifically: the sacrificial layer is corroded by oxygen plasma under high-temperature vacuum condition, the derivative is carried out by air flow transportation, and the sacrificial layer at the bottom of the mirror surface can be completely removed by setting proper process conditions. After the sacrificial layer is removed, the electric signals between the first silicon layer and the second silicon layer are completely isolated and are respectively connected with the read-out circuit board, so that a voltage difference exists between the first silicon layer and the second silicon layer after the electric current is applied, and the mirror surface can be deflected under the driving of electrostatic force.
In summary, the preparation method of the MEMS micro mirror array realizes the array arrangement by independently connecting the read-out circuit board with each micro mirror unit, simultaneously, the deflection of each micro mirror unit can be independently controlled, the application range of the MEMS micro mirror array is widened, the required deflection angle can be met under the action of smaller electrostatic driving force by combining the special structural processing of the MEMS micro mirror array, the operation complexity of the MEMS micro mirror array is reduced, the use flexibility degree and the effect of the MEMS micro mirror are further improved, the MEMS micro mirror array has considerable use prospect, in addition, the MEMS micro mirror array with smaller torsional rigidity is prepared by arranging the sacrificial layer, the mirror filling rate is increased by arranging the comb-tooth type mirror, and the higher micro mirror reflectivity and a large number of micro mirror units can show better imaging effect.
Example two
The embodiment provides a preparation method of an MEMS micro-mirror array, which mainly comprises the following steps:
s1, arranging a substrate on the surface of a read-out circuit board, and specifically, the method comprises the following steps:
s11, depositing a first conductive metal film and a first silicon layer on the surface of the read-out circuit board, and further, patterning the surfaces of the first silicon layer and the first metal film in the process so as to form electrode isolation;
and S12, depositing a first silicon layer on the surface of the first conductive metal film to obtain a substrate, and transmitting an electric signal to the first silicon layer through the first conductive metal film by the read-out circuit board. In this embodiment, the first conductive metal film substrate deposited on the surface of the readout circuit board is an aluminum film, and the first silicon layer is preferably polysilicon, and after the first silicon layer is deposited, patterning photolithography is required on the surface of the first silicon layer to facilitate subsequent operations.
S2, arranging a sacrificial layer on the surface of the substrate, and etching a through hole on the surface of the sacrificial layer, wherein the sacrificial layer is a polyimide layer in the embodiment, and further, the through hole etched on the surface of the sacrificial layer is a barrel-shaped through hole with a large upper opening and a small lower opening.
S3, arranging a mirror surface connected with the readout circuit board on the surface of the sacrificial layer, wherein the mirror surface comprises the following steps:
s31, a second silicon layer, a second conductive metal film, a stress adjusting layer and a reflecting layer are sequentially arranged on the surface of the sacrificial layer, specifically, in the embodiment, the second silicon layer is polysilicon, the second silicon layer can be uniformly deposited on the surface of the second silicon layer through holes etched on the surface of the sacrificial layer, the second conductive metal film is an aluminum layer, the stress adjusting layer comprises a silicon dioxide layer and a silicon nitride layer which are sequentially arranged on the surface of the second conductive metal film, and a reflecting layer base material is metal.
S32, etching the second silicon layer until the readout circuit board is exposed, and then depositing a second conductive metal film, wherein the readout circuit board is connected with the second conductive metal film and transmits an electric signal to the second silicon layer. In this embodiment, the second conductive metal film is deposited after etching the second silicon layer, so that the second conductive metal film contacts the readout circuit board.
S4, etching the MEMS micromirrors to obtain micromirror units in array arrangement, and particularly, dividing the micromirror array through an etching process to obtain the comb-tooth type micromirror array capable of being controlled independently.
S5, removing the sacrificial layer to obtain the MEMS micro mirror array, wherein after the sacrificial layer is removed, the electric signals between the first silicon layer and the second silicon layer are completely isolated and are respectively connected with the read-out circuit board, so that a voltage difference exists between the first silicon layer and the second silicon layer after the electric signals are electrified, and the mirror surface can be deflected under the driving of electrostatic force.
Referring to fig. 1 to 3, the micro mirror prepared by the method of this example has the following structure: the substrate 200 and the mirror surface 100 are sequentially arranged on the readout circuit board 300, the mirror surface 100 comprises a main body 110 and at least two connecting parts 120, wherein the main body 110 and the substrate 200 are arranged at intervals, the connecting parts 120 are connected with the readout circuit board 300, the connecting parts 120 comprise torsion beams 121 and anchor posts 122, and the anchor posts 122 are contacted with the readout circuit board 300. In this embodiment, two sets of torsion beams 121 and anchor posts 122 are symmetrically disposed on opposite sides of the mirror 100, two ends of any torsion beam 121 are connected to the main body 110 and the anchor posts 122, and the anchor posts 122 are connected to the readout circuit board 300. In this embodiment, the substrate 200 and the mirror 100 are disposed at intervals, wherein the substrate 200 includes a first substrate 230 and a second substrate 240 disposed at intervals in the same horizontal plane, and the first substrate 230 and the second substrate 240 are disposed on two sides of the torsion beam 121, and further, the torsion angle of the micromirror is controlled by controlling the voltage provided by the readout circuit board 300, and the torsion direction of the micromirror is limited by the cooperation between the first substrate 230 or the second substrate 240 and the mirror 100, so that the purpose of freely controlling the torsion angle and the torsion direction of the micromirror can be achieved.
Referring to fig. 4 to 6, in the present embodiment, the mirror 100 is provided with a second conductive metal film 140, a second silicon layer 130, a stress adjustment layer 150, and a reflective layer 160 in order from the readout circuit board 300, wherein the stress adjustment layer 150 includes a silicon dioxide layer 151 and a silicon nitride layer 152. Referring to fig. 7, in the present embodiment, the substrate 200 is provided with a first silicon layer 210 and a first conductive metal film 220 from the readout circuit board 300. Referring to fig. 8, a plurality of micromirrors can be arrayed on the readout circuit board 300.
As can be seen from fig. 9, the micromirror manufactured by the method can be rotated to a greater extent along the torsion beam 121 by the electrostatic force through the support of the anchor posts 122, and the purpose of rotating the micromirror by controlling the voltage is achieved.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations and modifications of the present invention will be apparent to those of ordinary skill in the art in light of the foregoing description. It is not necessary here nor is it exhaustive of all embodiments. And obvious variations or modifications thereof are contemplated as falling within the scope of the present invention.
Claims (5)
1. A preparation method of an MEMS micro-mirror array is characterized by comprising the following steps: the method comprises the following steps:
s1, arranging a substrate on the surface of a read-out circuit board, wherein the substrate specifically comprises the following components:
s11, depositing a first conductive metal film on the surface of the readout circuit board;
s12, depositing a first silicon layer on the surface of the first conductive metal film, and transmitting an electric signal to the first silicon layer through the first conductive metal film by the read-out circuit board to obtain the substrate;
s2, depositing a sacrificial layer on the surface of the substrate, and etching a through hole on the surface of the sacrificial layer;
s3, depositing a mirror surface connected with the readout circuit board on the surface of the sacrificial layer to obtain the MEMS micro mirror, wherein the mirror surface is specifically as follows: etching the second silicon layer until the readout circuit board is exposed after depositing the second silicon layer on the surface of the sacrificial layer, and then sequentially depositing a second conductive metal film, a stress adjusting layer and a reflecting layer, wherein the readout circuit board is connected with the second conductive metal film and transmits an electric signal to the second silicon layer, and the stress adjusting layer comprises a silicon dioxide layer and a silicon nitride layer which are sequentially deposited on the surface of the second conductive metal film;
s4, etching the MEMS micromirrors to obtain micromirror units in array arrangement;
s5, removing the sacrificial layer to enable each micro mirror unit to deflect independently, and obtaining the MEMS micro mirror array.
2. The method of manufacturing a MEMS micro-mirror array according to claim 1, wherein: in step 1, patterning is performed on both the first silicon layer and the first conductive metal film.
3. The method of manufacturing a MEMS micro-mirror array according to claim 1, wherein: the sacrificial layer substrate is an organic material.
4. A method of producing a MEMS micro-mirror array according to claim 1 or 3, wherein: and etching barrel-shaped through holes on the surface of the sacrificial layer.
5. The method of manufacturing a MEMS micro-mirror array according to claim 1, wherein: the reflective layer substrate is metal.
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| KR20000032305A (en) * | 1998-11-13 | 2000-06-15 | 전주범 | Fabrication method of thin film actuated mirror array |
| KR100600248B1 (en) * | 2003-12-31 | 2006-07-13 | 동부일렉트로닉스 주식회사 | Digital micro-mirror device, and manufacturing method of the same |
| CN101774531A (en) * | 2010-01-05 | 2010-07-14 | 上海集成电路研发中心有限公司 | MEMS microbridge structure contact hole preparation method |
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| CN111847372A (en) * | 2020-07-31 | 2020-10-30 | 上海华虹宏力半导体制造有限公司 | Infrared MEMS bridge column structure and process method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7012731B2 (en) * | 2000-08-30 | 2006-03-14 | Reflectivity, Inc | Packaged micromirror array for a projection display |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000032305A (en) * | 1998-11-13 | 2000-06-15 | 전주범 | Fabrication method of thin film actuated mirror array |
| KR100600248B1 (en) * | 2003-12-31 | 2006-07-13 | 동부일렉트로닉스 주식회사 | Digital micro-mirror device, and manufacturing method of the same |
| CN101774531A (en) * | 2010-01-05 | 2010-07-14 | 上海集成电路研发中心有限公司 | MEMS microbridge structure contact hole preparation method |
| CN104516102A (en) * | 2013-09-30 | 2015-04-15 | 中芯国际集成电路制造(上海)有限公司 | Formation method of digital micromirror device |
| CN111847372A (en) * | 2020-07-31 | 2020-10-30 | 上海华虹宏力半导体制造有限公司 | Infrared MEMS bridge column structure and process method |
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