CN116952376A - MEMS alkali metal atomic gas chamber for terahertz wave detection and wafer level preparation method thereof - Google Patents
MEMS alkali metal atomic gas chamber for terahertz wave detection and wafer level preparation method thereof Download PDFInfo
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- CN116952376A CN116952376A CN202310982139.XA CN202310982139A CN116952376A CN 116952376 A CN116952376 A CN 116952376A CN 202310982139 A CN202310982139 A CN 202310982139A CN 116952376 A CN116952376 A CN 116952376A
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- 150000001340 alkali metals Chemical class 0.000 title claims abstract description 104
- 229910052783 alkali metal Inorganic materials 0.000 title claims abstract description 103
- 238000001514 detection method Methods 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000010410 layer Substances 0.000 claims abstract description 110
- 239000010453 quartz Substances 0.000 claims abstract description 81
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 81
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 52
- 239000010703 silicon Substances 0.000 claims abstract description 52
- 230000003287 optical effect Effects 0.000 claims abstract description 40
- 238000011049 filling Methods 0.000 claims abstract description 32
- 239000011229 interlayer Substances 0.000 claims abstract description 22
- 229910000573 alkali metal alloy Inorganic materials 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 23
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 238000004544 sputter deposition Methods 0.000 claims description 12
- 229910052697 platinum Inorganic materials 0.000 claims description 11
- 238000004140 cleaning Methods 0.000 claims description 9
- 239000003795 chemical substances by application Substances 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 230000004913 activation Effects 0.000 claims description 4
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 4
- 239000003638 chemical reducing agent Substances 0.000 claims description 4
- ALKZAGKDWUSJED-UHFFFAOYSA-N dinuclear copper ion Chemical compound [Cu].[Cu] ALKZAGKDWUSJED-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910052792 caesium Inorganic materials 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000005022 packaging material Substances 0.000 claims description 2
- 229910052701 rubidium Inorganic materials 0.000 claims description 2
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical group [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 claims 2
- 229910000544 Rb alloy Inorganic materials 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000000354 decomposition reaction Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000002791 soaking Methods 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 7
- 235000012431 wafers Nutrition 0.000 description 45
- 238000005259 measurement Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention relates to the technical field of terahertz wave detection and quanta, in particular to a MEMS alkali metal atomic gas chamber for terahertz wave detection and a wafer level preparation method thereof. The alkali metal filling cavity, the optical cavity and the micro-channel are positioned on the middle layer silicon wafer, and the alkali metal filling cavity and the optical cavity penetrate through the silicon wafer and are sealed by the upper quartz bonding layer and the lower quartz bonding layer to form a fully-sealed air chamber structure. The alkali metal filling cavity is filled with alkali metal alloy. And the micro-channel is used for communicating the alkali metal filling cavity with the optical cavity, and the depth of the micro-channel is smaller than the thickness of the interlayer silicon wafer. The invention solves the problem of energy attenuation of the detection window in the terahertz wave detection technology, provides a miniaturized, efficient and accurate terahertz wave detection scheme, and has wide application prospects.
Description
Technical Field
The invention relates to the technical field of terahertz wave detection and quantum, in particular to an alkali metal atomic gas chamber, and specifically relates to a MEMS alkali metal atomic gas chamber for terahertz wave detection and a wafer level preparation method thereof.
Background
Terahertz waves refer to electromagnetic waves with frequencies ranging from 0.1THz to 10THz, and the terahertz wave detection technology has wide application potential and comprises a plurality of important fields such as terahertz imaging technology, communication data transmission, spectrum analysis, safety detection, quantum technology and the like. In the prior art, the problem of large attenuation exists in the measurement of terahertz waves by adopting an alkali metal atomic gas chamber, and the largest source of loss in the propagation process is reflection and absorption of an optical window of the gas chamber. Therefore, searching for a novel terahertz optical window material enables the attenuation of terahertz waves in the propagation process to be small, and has very important significance for improving measurement accuracy.
Disclosure of Invention
The invention provides a MEMS alkali metal atomic gas chamber for terahertz wave detection and a wafer level preparation method thereof, which aim to solve the technical problem of large attenuation in terahertz wave measurement of an alkali metal atomic gas chamber.
The invention is realized by adopting the following technical scheme: the MEMS alkali metal atomic gas chamber for terahertz wave detection comprises an upper quartz bonding layer, a lower quartz bonding layer, an intermediate layer silicon wafer, an alkali metal filling cavity, an optical cavity and a micro-channel, wherein the upper quartz bonding layer and the lower quartz bonding layer are packaging materials of the intermediate layer silicon wafer, the alkali metal filling cavity, the optical cavity and the micro-channel are formed in the intermediate layer silicon wafer, the alkali metal filling cavity and the optical cavity penetrate through the silicon wafer and are sealed by the upper quartz bonding layer and the lower quartz bonding layer to form a fully-sealed gas chamber structure, the alkali metal filling cavity is filled with alkali metal alloy packaged together by an alkali metal releasing agent and a reducing substance, and the micro-channel communicates the alkali metal filling cavity with the optical cavity and has a depth smaller than the thickness of the intermediate layer.
Preferably, the upper quartz bonding layer and the lower quartz bonding layer are both quartz wafers which are polished on both sides and have extremely low attenuation to terahertz waves.
Preferably, the thickness of the upper quartz bonding layer and the lower quartz bonding layer is 0.5mm, respectively.
Preferably, the thickness of the interlayer silicon wafer is 1.5mm.
Preferably, the structure of the alkali metal atomic gas chamber is a fully sealed quartz-silicon-quartz three-layer structure or a fully sealed quartz-silicon-glass three-layer structure.
Preferably, the alkali metal releasing agent may be a cesium atom releasing agent or a rubidium atom releasing agent.
Preferably, the alkali metal filled cavity and the optical cavity are rectangular or circular.
Preferably, the micro-channels for connecting the alkali metal filling cavity and the optical cavity have three or two or four micro-channels.
Preferably, the length and width of the micro-channels may be 500 μm and 150 μm, respectively, but are not limited to this size, and may be other reasonable sizes.
Another aspect of the present invention provides a method for manufacturing the MEMS alkali metal atomic gas chamber for terahertz wave detection, including: step 1: carrying out standard cleaning process on the lower quartz bonding layer, the upper quartz bonding layer and the middle layer silicon wafer and drying for standby; step 2: processing the alkali metal filling cavity, the optical cavity and the micro-channel in the interlayer silicon wafer; step 3: performing copper-copper hot-press bonding on the cleaned upper quartz bonding layer and the middle layer silicon wafer to form a lower silicon-quartz structure; step 4: placing the alkali metal alloy in the alkali metal filled cavity; step 5: and carrying out copper-copper hot-press bonding on the upper quartz bonding layer and the middle layer silicon wafer after the cleaning treatment to form a final fully-sealed quartz-silicon-quartz three-layer structure. Step 6: and irradiating the alkali metal filling cavity by using high-power laser to enable alkali metal elementary gas generated by burning, heating and decomposing the alkali metal alloy to diffuse into the optical cavity through the micro-channel.
Preferably, the standard cleaning process comprises: and sequentially placing the upper quartz bonding layer, the middle layer silicon wafer and the lower quartz bonding layer into acetone, deionized water, absolute ethyl alcohol and deionized water for ultrasonic cleaning.
Preferably, the method for manufacturing an alkali metal atom gas chamber further comprises, before step 3: and carrying out surface activation treatment on bonding surfaces of the upper quartz bonding layer, the lower quartz bonding layer and the middle layer silicon wafer.
Preferably, the method for manufacturing an alkali metal atom gas chamber further comprises, before step 3: and sputtering metal platinum and metal copper on the bonding surface of the lower quartz bonding layer and the bonding surface of the middle layer silicon wafer respectively to serve as an adhesion layer and a bonding middle layer.
Preferably, the method for manufacturing an alkali metal atom gas chamber further comprises, before step 4: and sputtering metal platinum and metal copper on the bonding surfaces of the upper quartz bonding layer and the interlayer silicon wafer as an adhesion layer and a bonding interlayer.
Preferably, in the method for manufacturing an alkali metal atomic gas chamber, in step 6, a high-power laser is used to irradiate an alkali metal filling cavity, so that the alkali metal alloy placed in the alkali metal filling cavity is burnt, heated and decomposed to generate an alkali metal gas simple substance and a solid oxide, and the decomposed alkali metal gas simple substance is diffused into the optical cavity through the micro-channel, so that the MEMS alkali metal atomic gas chamber in a vacuum state is obtained.
In summary, due to the adoption of the technical scheme, the invention has the following beneficial effects:
1) The accuracy of measuring terahertz waves is improved: by using quartz as the optical window material, the terahertz wave has smaller attenuation when passing through the optical window of the air chamber, thereby realizing more accurate measurement results.
2) Higher light transmittance is achieved: the quartz has higher light transmittance, can reduce the loss of light energy, and improves the transmission efficiency and the energy utilization rate of terahertz waves.
3) Expanding the application field: the technical scheme of the invention is suitable for the field of terahertz wave detection and measurement, improves the space-time resolution of the terahertz detection technology, and provides an effective solution for developing microminiaturization and integration high-sensitivity and high signal-to-noise ratio terahertz radiation source detection technology.
Drawings
Fig. 1 is a schematic view showing a single cell structure of an alkali metal atom cell according to an embodiment of the present invention.
Fig. 2 is a schematic side view of an alkali metal atom cell according to an embodiment of the present invention.
Fig. 3 is a schematic view of a chamber cavity of an alkali metal atom chamber according to an embodiment of the present invention.
Fig. 4 is a schematic plan view of an alkali metal atomic cell wafer level interlayer silicon wafer according to one embodiment of the present invention.
Fig. 5 is a flowchart of a method for manufacturing an alkali metal atom cell according to an embodiment of the present invention.
Fig. 6 is a main MEMS process flow diagram of a method for manufacturing an alkali metal atomic gas cell according to one embodiment of the present invention. Wherein (a) an interlayer silicon wafer; (b) Processing an alkali metal filling cavity, an optical reaction cavity and a micro-channel; (c) sputtering platinum metal on the interlayer silicon wafer; (d) sputtering metallic copper on the interlayer silicon wafer; (e) Sputtering metal platinum on the upper quartz wafer and the lower quartz wafer; (f) Sputtering metal copper on the upper quartz wafer and the lower quartz wafer; (g) Performing hot-press bonding on the middle-layer silicon wafer and the lower-layer quartz wafer; (h) filling cesium alloy into the alkali metal filled cavity; (i) And bonding the upper quartz wafer and the middle silicon wafer by hot pressing to form a fully-sealed alkali metal atom air chamber.
The serial numbers in the figure are: 1-upper quartz bonding layer, 2-middle layer silicon wafer, 3-lower quartz bonding layer, 4-alkali metal filling cavity, 5-optical cavity and 6-micro channel.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Referring to fig. 1-3, the present invention provides an alkali metal atomic gas chamber, which is suitable for detecting terahertz waves. FIG. 1 is a schematic diagram of a single air chamber structure of an alkali metal atomic air chamber for terahertz detection in the invention. As shown in fig. 1, the alkali metal atomic gas chamber of the present invention comprises an upper quartz bonding layer 1, an intermediate layer silicon wafer 2, a lower quartz bonding layer 3, an alkali metal filling cavity 4, an optical cavity 5 and a micro-channel 6.
The material of the upper quartz bonding layer 1 and the lower quartz bonding layer 3 may be quartz having a small attenuation to terahertz waves. The dimensions may be 4 inches, 6 inches, etc., and the thickness may be 500 μm or other reasonable dimensions.
The dimensions of the intermediate layer silicon wafer 2 are 4 inches, 6 inches, etc., and the thickness may be 1.5mm or other reasonable dimensions.
Fig. 2 is a schematic side view of an alkali metal atom cell according to an embodiment of the present invention. As shown in FIG. 2, the alkali metal atom gas chamber of the invention has a fully sealed quartz-silicon-quartz three-layer structure, but is not limited to this structure, and can also have other reasonable structures such as quartz-silicon-glass and the like.
Fig. 3 is a schematic view of a chamber cavity of an atomic gas chamber according to one embodiment of the present invention. As shown in fig. 1 and 3, an alkali metal filled cavity 4, an optical cavity 5, and a micro-channel 6 are formed in an interlayer silicon wafer 2. The alkali metal filling cavity 4 and the optical cavity 5 penetrate through the interlayer silicon wafer 2 and are sealed by the upper quartz bonding layer 1 and the lower quartz bonding layer 3.
The alkali metal filled cavity 4 is placed with an alkali metal alloy for releasing alkali metal atoms. The alkali metal filled cavities 4 may be rectangular grooves or circular grooves, but are not limited to these two shapes, and may be 2mm x 2mm in length and width or other reasonable dimensions.
The optical cavity 5 is used for reacting light with alkali metal so that alkali metal atoms are excited to a specific energy level. The length and width of the optical cavity 5 may be 3mm x 3mm or other reasonable dimensions, and may be a circular groove or a rectangular groove, but is not limited to these two shapes.
The micro-channel 6 is used to connect the alkali metal filled cavity 4 with the optical cavity 5. The alkali metal gas generated in the alkali metal filled cavity 4 enters the optical cavity through the micro-channel to perform the optical reaction of the next step. The length and width of the micro-channels 6 may be 500 μm and 150 μm, respectively, but are not limited to this size, and may be other reasonable sizes. The depth is smaller than the thickness of the interlayer silicon wafer 2.
The embodiment of the invention also provides a manufacturing method of the alkali metal atomic gas chamber. Fig. 5 is a flowchart of a method for manufacturing an alkali metal atom cell according to an embodiment of the present invention. As shown in fig. 5, the method for manufacturing an alkali metal atomic gas chamber according to the present embodiment includes steps 1 to 6.
In the step 1, the upper quartz bonding layer 1, the middle layer silicon wafer 2 and the lower layer quartz bonding layer 3 are sequentially placed into acetone, deionized water, absolute ethyl alcohol and deionized water for ultrasonic cleaning and drying, and other impurities such as adhered organic matters are removed, so that the cleanliness of the surface is maintained.
In step 2, the alkali metal filled cavity 4, the optical cavity 5 and the micro-channel 6 are etched on the interlayer silicon wafer 2 by a dry etching technique, and the technique is not limited to the dry etching technique, and a wet etching technique or the like may be used.
Before the step 3, surface activation treatment is carried out on the bonding surfaces of the upper quartz bonding layer 1, the lower quartz bonding layer 3 and the middle layer silicon wafer 2. The aim is mainly to enhance the affinity and the adhesion of the bonding interface and to improve the surface energy of the Gao Jian bonding interface, thereby realizing a firmer bonding effect.
Before the step 3, the surface activation treatment is carried out on the bonding surfaces of the upper quartz bonding layer 1, the lower quartz bonding layer 3 and the middle layer silicon wafer 2, and then the method further comprises the following steps: and sputtering metal platinum and metal copper on the bonding surface of the lower quartz bonding layer 3 and the bonding surface of the middle layer silicon wafer 2 respectively to serve as an adhesion layer and a bonding middle layer. But is not limited to sputtering techniques and other reasonable techniques such as thermal evaporation may be used. The thickness of the metal platinum is 50nm, the thickness of the metal copper is 500nm, and other reasonable sizes can be adopted. Because the thermal expansion coefficients of quartz and silicon are not matched, residual stress is large after bonding and cooling, and platinum is adopted as an adhesion layer to provide good adhesion and chemical stability, so that adhesion of copper on the surface of a quartz substrate is facilitated. The metal copper is adopted as the bonding interlayer to match the thermal expansion difference between the metal copper and the bonding interlayer as far as possible, so as to reduce the residual stress of the bonding interface and improve the bonding reliability and stability.
Step 3: performing hot-press bonding on the lower quartz bonding layer 3 and the middle silicon wafer 2 after the cleaning treatment to form a lower silicon-quartz structure;
after step 3 and before step 4, the manufacturing method of the present embodiment further includes: and sputtering metal platinum and metal copper on the bonding surface of the upper quartz bonding layer 1 and the interlayer silicon wafer 2 by using a sputtering technology to serve as a bonding interlayer. The thickness of the metal platinum is 50nm and the thickness of the metal copper is 500nm, but is not limited to this size. The metal platinum is used as an adhesion layer, so that the adhesion force between the bonding surface of the upper quartz bonding layer 1 and the bonding surface of the middle layer silicon wafer 2 and the bonding middle layer metal copper is improved, and the bonding stability is enhanced.
Step 4: placing the alkali metal alloy in the alkali metal filled cavity 4;
step 5: performing hot-press bonding on the upper quartz bonding layer 1 and the middle layer silicon wafer 2 after the cleaning treatment to form a final quartz-silicon-quartz three-layer structure;
in step 6, the alkali metal filling cavity 4 is irradiated by high-power laser under a vacuum environment, so that alkali metal elementary gas generated by burning, heating and decomposing the alkali metal alloy placed in the alkali metal filling cavity 4 is diffused into the optical cavity 5 through the micro-channel 6, and the MEMS alkali metal atomic gas chamber under the vacuum state is obtained, thereby ensuring the purity of the alkali metal gas in the optical cavity 5, avoiding the introduction of impurities generated by reaction into the optical cavity 5, and further ensuring the high light transmission environment of the alkali metal in the following optical reaction.
The alkali metal atomic gas chamber and the manufacturing method thereof can solve the problems of large attenuation, inaccurate measurement results and the like of the alkali metal atomic gas chamber in the prior art when the terahertz wave is measured by manufacturing the fully-sealed MEMS alkali metal atomic gas chamber with the quartz-silicon-quartz three-layer structure.
The foregoing is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art, who is within the scope of the present invention, should make equivalent substitutions or modifications according to the technical scheme of the present invention and the inventive concept thereof, and should be covered by the scope of the present invention.
Claims (10)
1. The MEMS alkali metal atomic gas chamber for terahertz wave detection is characterized by comprising an upper quartz bonding layer (1), a lower quartz bonding layer (3), an intermediate layer silicon wafer (2), an alkali metal filling cavity (4), an optical cavity (5) and a micro-channel (6), wherein the upper quartz bonding layer (1) and the lower quartz bonding layer (3) are packaging materials of the intermediate layer silicon wafer (2), the alkali metal filling cavity (4), the optical cavity (5) and the micro-channel (6) are formed in the intermediate layer silicon wafer (2), the alkali metal filling cavity (4) and the optical cavity (5) penetrate through the intermediate layer silicon wafer (2) and are sealed by the upper quartz bonding layer (1) and the lower quartz bonding layer (3) to form a fully-sealed gas chamber structure, alkali metal alloy is filled in the alkali metal filling cavity (4) and filled with alkali metal release agent and reducing agent and packaged together, and the micro-channel (6) is used for communicating the alkali metal filling cavity (4) with the optical cavity (5) to be less than the depth of the silicon wafer (2).
2. The MEMS alkali metal atomic gas cell for terahertz wave detection in accordance with claim 1, wherein the gas cell structure is a totally enclosed quartz-silicon-quartz three-layer structure or a totally enclosed quartz-silicon-glass three-layer structure, the thickness of the upper quartz bonding layer (1) and the lower quartz bonding layer (3) is 0.5mm, and the thickness of the middle silicon wafer is 1.5mm.
3. The MEMS alkali metal atomic gas chamber for terahertz wave detection according to claim 1 or 2, wherein the alkali metal alloy is a cesium alloy formed by packaging a cesium atom releasing agent and a reducing agent, or a rubidium alloy formed by packaging a rubidium atom releasing agent and a reducing agent.
4. MEMS alkali metal atomic gas cell facing terahertz wave detection according to claim 1 or 2, characterized in that the alkali metal filling cavity (4) and the optical cavity (5) are rectangular, with dimensions of 2mm x 2mm and 3mm x 3mm, respectively, the alkali metal filling cavity (4) and the optical cavity (5) being either circular.
5. MEMS alkali metal atom cell facing terahertz wave detection according to claim 1 or 2 characterized in that the micro-channels (6) connecting the alkali metal filled cavity (4) and the optical cavity (5) have three or two or four.
6. MEMS alkali metal atomic gas cell facing terahertz wave detection according to claim 1 or 2, characterized in that the length and width of the micro-channel (6) can be 500 μm and 150 μm respectively.
7. The wafer level preparation method of the MEMS alkali metal atomic gas chamber for terahertz wave detection according to claim 2, which is characterized by comprising the following specific preparation steps:
step 1: carrying out standard cleaning process on the upper quartz bonding layer (1), the middle layer silicon wafer (2) and the lower quartz bonding layer (3) and drying for standby;
step 2: etching the alkali metal filling cavity (4), the optical cavity (5) and the micro-channel (6) in the interlayer silicon wafer (2);
step 3: carrying out copper-copper hot-press bonding on the lower quartz bonding layer (3) and the middle layer silicon wafer (2) after the cleaning treatment to form a lower silicon-quartz structure;
step 4: -placing the alkali metal alloy in the alkali metal filled cavity (4);
step 5: carrying out copper-copper hot-press bonding on the upper quartz bonding layer (1) and the middle-layer silicon wafer (2) after the cleaning treatment to form a final quartz-silicon-quartz three-layer structure;
step 6: and irradiating the alkali metal filling cavity (4) by using high-power laser to enable alkali metal gas simple substances generated by burning, heating and decomposing the alkali metal alloy to diffuse into the optical cavity (5) through the micro-channel (6).
8. The wafer level preparation method of the MEMS alkali metal atomic gas cell for terahertz wave detection in accordance with claim 7, wherein the standard cleaning process comprises: and sequentially soaking the upper quartz bonding layer (1), the middle layer silicon wafer (2) and the lower quartz bonding layer (3) in acetone, deionized water, absolute ethyl alcohol and deionized water for ultrasonic cleaning.
9. The wafer level preparation method of the MEMS alkali metal atomic gas cell for terahertz wave detection as set forth in claim 8, wherein before step 3, comprising: carrying out surface activation treatment on bonding surfaces of the upper quartz bonding layer (1), the lower quartz bonding layer (3) and the middle layer silicon wafer (2), and further comprising the following steps before the step 3: sputtering metal platinum and metal copper on the bonding surface of the lower quartz bonding layer (3) and the interlayer silicon wafer (2) respectively to serve as an adhesion layer and a bonding interlayer, and further comprising the following steps before the step 4: and sputtering metal platinum and metal copper on the bonding surfaces of the upper quartz bonding layer and the interlayer silicon wafer as an adhesion layer and a bonding interlayer.
10. The wafer level manufacturing method of the MEMS alkali metal atomic gas cell for terahertz wave detection according to claim 9, wherein in step 6, the alkali metal filling cavity (4) is irradiated with a high-power laser, so that the alkali metal alloy placed in the alkali metal filling cavity is burned and thermally decomposed to generate an alkali metal gas simple substance and the rest of solid compounds, and the alkali metal gas simple substance generated by decomposition is diffused to the optical cavity (5) through the micro-channel (6), thereby obtaining the MEMS alkali metal atomic gas cell under vacuum state.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310982139.XA CN116952376A (en) | 2023-08-07 | 2023-08-07 | MEMS alkali metal atomic gas chamber for terahertz wave detection and wafer level preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117309768A (en) * | 2023-11-28 | 2023-12-29 | 中北大学 | Preparation method and application of ultra-bandwidth terahertz detection-oriented micro atomic gas chamber |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117309768A (en) * | 2023-11-28 | 2023-12-29 | 中北大学 | Preparation method and application of ultra-bandwidth terahertz detection-oriented micro atomic gas chamber |
| CN117309768B (en) * | 2023-11-28 | 2024-02-20 | 中北大学 | Preparation method and application of ultra-bandwidth terahertz detection-oriented micro atomic gas chamber |
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