CN111081580A - Method for detecting broken bond strength of wafer - Google Patents
Method for detecting broken bond strength of wafer Download PDFInfo
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- CN111081580A CN111081580A CN201910786123.5A CN201910786123A CN111081580A CN 111081580 A CN111081580 A CN 111081580A CN 201910786123 A CN201910786123 A CN 201910786123A CN 111081580 A CN111081580 A CN 111081580A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
Abstract
A method for detecting the broken bond strength of a wafer comprises the following steps: providing a first wafer; performing bond breaking treatment on the surface of the first wafer to enable the surface of the first wafer to have a first group; adding a trapping agent on the surface of the first wafer, and reacting a first group on the surface of the first wafer with the trapping agent to form a reaction product; detecting the reaction product to obtain the chemical emission intensity of the reaction product; and acquiring the first group concentration in the reaction product according to the chemical emission intensity. The detection method is simple to operate, high in sensitivity and capable of quickly obtaining the strength condition of broken keys on the surface of the first wafer.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a method for detecting the broken bond strength of a wafer.
Background
Bonding is an indispensable technique in semiconductor manufacturing processes, and is widely used in precision manufacturing processes, particularly in mechanical and electrical connections of electronic products. The bonding technology is that two polished silicon wafers are bonded together after being chemically cleaned, and then are subjected to high-temperature annealing treatment, and the interface generates physical and chemical reaction to form chemical bond connection.
In semiconductor manufacturing processes, such as backside illuminated image sensor manufacturing processes, two or more wafers are bonded together and the bonding force between the bonded wafers is measured. The bonding strength measurement currently includes the czochralski method and the crack propagation method. The czochralski method is widely used for measuring the bonding strength of a bonded piece, and is expressed by the maximum tensile force for pulling the bonded piece, but the method is limited by the tensile force, a handle, an adhesive and the like, and the measuring method is not flexible and convenient and is a destructive inspection method. The crack propagation method, also called as a blade method, adopts the insertion of a blade along a bonding interface and observes the fracture depth to reflect the bonding strength, and the method has simple operation, small damage to a bonding sheet and large degree error.
Disclosure of Invention
The invention aims to provide a method for detecting the broken bond strength of a wafer so as to detect the bonding force strength of the wafer.
In order to solve the above technical problem, an embodiment of the present invention provides a method for detecting a bond breaking strength of a wafer, including: providing a first wafer; performing bond breaking treatment on the surface of the first wafer to enable the surface of the first wafer to have a first group; adding a trapping agent on the surface of the first wafer, and reacting a first group on the surface of the first wafer with the trapping agent to form a reaction product; detecting the reaction product to obtain the chemical emission intensity of the reaction product; and acquiring the first group concentration in the reaction product according to the chemical emission intensity.
Optionally, the first wafer includes: the dielectric layer is positioned on the surface of the substrate, and the material of the dielectric layer is provided with Si-O bonds; the key breaking processing method comprises the following steps: carrying out plasma treatment on the surface of the first wafer to break Si-O bonds on the surface of the first wafer; after the plasma treatment, activating treatment is carried out on the surface of the first wafer, so that the surface of the first wafer is provided with first groups.
Optionally, the method of activation treatment includes: and treating the surface of the first wafer by using deionized water, and forming a first group on the surface of the first wafer.
Optionally, the first group is: a hydroxyl radical.
Optionally, the capture agent is: terephthalic acid; the reaction product is: 2-hydroxy terephthalic acid.
Optionally, the method for obtaining the first group concentration according to the chemical emission intensity comprises: obtaining a first group-chemical emission intensity relation model; and acquiring corresponding first group concentration according to the chemical emission intensity by adopting the first group-chemical emission intensity relation model.
Optionally, the method for obtaining the first group-chemical emission intensity relationship model includes: providing a plurality of second wafers; carrying out a plurality of times of first treatment by adopting a plurality of standard capture agents, wherein the solution concentrations of different standard capture agents are different, and each standard capture agent carries out the first treatment on one second wafer once to obtain the chemical emission intensity corresponding to the solution concentrations of a plurality of groups of standard capture agents; establishing a first group-chemical emission intensity relation model according to the chemical emission intensities corresponding to the solution concentrations of the multiple groups of standard capture agents and the concentration of a first group corresponding to the solution concentration of the standard capture agent in a reaction product; the first processing includes: performing bond breaking treatment on the surface of the second wafer to enable the surface of the second wafer to have a first group; after the bond breaking treatment, adding a standard trapping agent, and reacting the first group on the surface of the second wafer with the standard trapping agent to generate a reaction product; and detecting the reaction product to obtain the chemical emission intensity of the reaction product.
Optionally, the method further includes: obtaining a first group-wafer bonding force relation model; and acquiring the wafer bonding force according to the concentration of the first group by adopting the first group-wafer bonding force relation model.
Optionally, the method for obtaining the first group-wafer bonding force relationship model includes: providing a plurality of groups of wafers, wherein each group of wafers comprises a third wafer, a fourth wafer and a fifth wafer; performing secondary treatment on the multiple groups of wafers for multiple times to obtain the first group concentration in the reaction products on the surfaces of the multiple groups of third wafers and the wafer bonding force between the fourth wafer and the fifth wafer corresponding to the first group concentration; establishing a first group-wafer bonding force relation model according to the concentrations of the multiple groups of first groups and the corresponding wafer bonding force; the second processing includes: providing a third wafer, a fourth wafer and a fifth wafer; performing key breaking treatment on the surface of the third wafer, the surface of the fourth wafer and the surface of the fifth wafer respectively to enable the surface of the third wafer, the surface of the fourth wafer and the surface of the fifth wafer to have a first group; adding a trapping agent on the surface of the third wafer, and reacting a first group on the surface of the third wafer with the trapping agent to form a reaction product; acquiring the concentration of a first group in a reaction product on the surface of the third wafer; bonding the fourth wafer and the fifth wafer after the key breaking treatment; and after the bonding treatment, detecting the wafer bonding force.
Compared with the prior art, the technical scheme of the embodiment of the invention has the following beneficial effects:
according to the method for detecting the broken bond strength of the wafer, provided by the technical scheme of the invention, the surface of the first wafer is provided with the first group by carrying out broken bond treatment on the surface of the first wafer. The capture agent is capable of reacting with a first group on the surface of the first wafer to form a reaction product. Since the reaction product can emit a large number of photons with specific wavelengths when returning to the ground state under a certain condition, the obtained reaction product is detected by a chemiluminescence method, and the concentration of the first group can be indirectly obtained through function conversion, namely, the bond breaking strength of the surface of the first wafer after the bond breaking treatment can be reflected. Meanwhile, the obtained reaction product is detected by adopting a chemiluminescence method, the operation is simple, the sensitivity is high, and the strength condition of broken bonds on the surface of the first wafer can be quickly obtained.
Furthermore, the corresponding relation between the concentration of the first group and the wafer bonding force is established, so that the broken bond condition of the first group is known by detecting the concentration of the first group after a certain broken bond treatment, the condition of the subsequent wafer bonding force can be indirectly predicted, the bonding quality is favorably improved, and the product yield after bonding is improved.
Drawings
FIGS. 1-7 are schematic structural diagrams of steps of a wafer bonding method;
fig. 8 to 14 are schematic diagrams illustrating steps of a method for detecting the bond breaking strength of a wafer according to an embodiment of the invention;
FIG. 15 is a schematic flow chart of a model for obtaining the first group-chemical emission intensity relationship;
FIG. 16 is a graph of the linear relationship between the chemical emission intensity of a first radical solution and a reaction product;
fig. 17 is a schematic flow chart of obtaining a first group-wafer bonding force relationship model.
Detailed Description
As described in the background, the conventional bonding process is not effective.
Fig. 1 to 7 are schematic structural diagrams of steps of a wafer bonding method.
Referring to fig. 1, a first wafer 101 and a second wafer 102 are provided, the first wafer 101 has a first dielectric layer 111 on a surface thereof, and the second wafer 102 has a second dielectric layer 112 on a surface thereof.
Referring to fig. 2 and 3, fig. 3 is an enlarged view of the second dielectric layer 112 shown in fig. 2 in a region a, and the plasma treatment is respectively performed on the surface of the first dielectric layer 111 and the surface of the second dielectric layer 112.
Referring to fig. 4 and 5, fig. 5 is an enlarged view of the second dielectric layer 112 shown in fig. 4 in a region B, and after the plasma treatment, the surface of the first dielectric layer 111 and the second dielectric layer 112 are respectively activated.
Referring to fig. 6 and 7, fig. 7 is an enlarged view of the second dielectric layer 112 and the first dielectric layer 111 shown in fig. 6 in the region C, and after the activation process, the first wafer 101 and the second wafer 102 are bonded together; after the bonding, high-temperature treatment is performed to bond the first wafer 101 and the second wafer 102.
In the above method, plasma having a certain energy can activate and break the covalent bonds on the surfaces of the first dielectric layer 111 and the second dielectric layer 112 by plasma treatment, thereby causing bond breakage. The material of the first dielectric layer 111 and the second dielectric layer 112 is usually silicon oxide, so after bond breaking, Si — O groups are formed on the surface of the first wafer 101 and the surface of the second wafer 102, respectively. The activation process typically employs deionized water that is capable of reacting with Si-O groups to form Si-OH groups on the surfaces of the first wafer 101 and the second wafer 102. Under the high temperature condition, the Si-OH groups of the first wafer 101 and the Si-OH groups on the surface of the second wafer 102 react, so that bonding occurs between the first wafer 101 and the second wafer 102.
However, since the number of Si-OH groups on the surface of the first wafer 101 and the surface of the second wafer 102 cannot be known, and the number of Si-OH groups is directly related to the subsequent bonding energy, the bonding effect between the subsequent first wafer 101 and the second wafer 102 cannot be known, which is likely to result in low yield of the final product.
In order to solve the technical problem, an embodiment of the present invention provides a method for detecting a bond breaking strength of a wafer, including: providing a first wafer; performing bond breaking treatment on the surface of the first wafer to enable the surface of the first wafer to have a first group; adding a trapping agent on the surface of the first wafer, and reacting a first group on the surface of the first wafer with the trapping agent to form a reaction product; detecting the reaction product to obtain the chemical emission intensity of the reaction product; and acquiring the first group concentration in the reaction product according to the chemical emission intensity. The method can detect the broken bond strength of the wafer, so that the detection of the bonding force strength of the wafer is achieved.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Fig. 8 to 14 are schematic diagrams illustrating steps of a method for detecting a wafer breaking strength according to an embodiment of the invention.
Referring to fig. 8, a first wafer 200 is provided.
In this embodiment, the first wafer 200 includes: the substrate comprises a substrate 201 and a dielectric layer 202 located on the surface of the substrate 201, wherein the material of the dielectric layer 202 has Si-O bonds.
The material of the substrate 201 is a semiconductor material. In this embodiment, the substrate 201 is made of silicon. In other embodiments, the material of the first substrate comprises silicon carbide, silicon germanium, a multi-component semiconductor material of group iii-v elements, silicon-on-insulator (SOI), or germanium-on-insulator. The multielement semiconductor material formed by III-V group elements comprises InP, GaAs, GaP, InAs, InSb, InGaAs or InGaAsP.
In an embodiment, the material of the dielectric layer 202 is silicon oxide.
The process for forming the dielectric layer 202 includes: a thermal oxidation process or a chemical vapor deposition process.
In this embodiment, the process of forming the dielectric layer 202 is a thermal oxidation process.
And then, carrying out bond breaking treatment on the surface of the first wafer to enable the surface of the first wafer to have a first group.
Referring to fig. 9, a plasma process is performed on the surface of the first wafer 200 to break the Si — O bond on the surface of the first wafer 200.
Specifically, the surface of the dielectric layer 202 on the surface of the substrate 201 is subjected to plasma treatment.
The process parameters of the plasma treatment comprise: the energy range is 25-150W, and the process time is 0-60 s.
In this embodiment, the entire surface of the dielectric layer 202 on the surface of the substrate 201 is subjected to plasma treatment.
Referring to fig. 10 and 11, fig. 11 is an enlarged view of the dielectric layer 202 shown in fig. 10 in a region a, and after the plasma treatment, the surface of the first wafer 200 is activated to have a first group on the surface of the first wafer 200.
The method for activating treatment comprises the following steps: the surface of the first wafer 200 is treated with deionized water, and a first group is formed on the surface of the first wafer 200.
Specifically, after the surface of the first wafer 200 is plasma-treated, the first wafer 200 is immersed in a container 300 containing deionized water 310.
In this embodiment, the material of the dielectric layer 202 is silicon oxide, and after the bond breaking process, the surface of the first wafer 200 has a first group, and the first group is a hydroxyl radical (· OH).
Referring to fig. 12 and 13, fig. 13 is an enlarged view of the dielectric layer 202 shown in fig. 12 in a region B, and a capture agent 210 is added to the surface of the first wafer 200, so that the first radicals on the surface of the first wafer 200 react with the capture agent 210 to form a reaction product.
Specifically, after the activation process, the capture agent 210 is added into the container 300 in which the first wafer 200 is immersed, and the deionized water 310 is contained in the container 300, so that the first group OH on the surface of the first wafer 200 and the capture agent 210 are chemically reacted to form a reaction product.
In this embodiment, the capture agent 210 is terephthalic acid solution.
It should be noted that the volume of the deionized water 310 is related to the container 300, and the minimum volume of the deionized water 310 is to ensure that the first wafer 200 can be soaked, i.e. the surface of the deionized water 310 is higher than the surface of the first wafer 200. The minimum mass of terephthalic acid in the scavenger 210 ranges from 0.2 mg to 1 mg, depending on the process requirements.
Since the first wafer 200 has a first group of OH on the surface, the terephthalic acid reacts with OH to generate a reaction product of 2-hydroxy terephthalic acid (2HBDC), and the chemical formula (I) is as follows:
when the terephthalic acid in the trapping agent 210 reacts with the first group OH on the surface of the first wafer 200, the terephthalic acid is oxidized to an excited state by the first group OH, thereby forming 2-hydroxyterephthalic acid. The reaction product 2-hydroxy terephthalic acid can emit a large number of photons at a specific wavelength when returning to the ground state under certain conditions. Specifically, the reaction product 2-hydroxy terephthalic acid can emit photons with a wavelength range of about 450 nm under the excitation light with a wavelength range of 400 nm to 550 nm, so that the obtained reaction product can be optically detected by adopting a chemiluminescence method.
Referring to fig. 14, the reaction product is detected to obtain the chemical emission intensity of the reaction product.
Specifically, after the reaction product 2-hydroxyterephthalic acid is formed, a sample 410 of the reaction product 2-hydroxyterephthalic acid is extracted, and the sample is placed in a vessel 400 and detected by a laser flash photolysis spectrometer to obtain a characteristic transient emission spectrum of the 2-hydroxyterephthalic acid.
In this embodiment, the wavelength is 400 nm-550 nm, and the laser energy is 1 × 105Joule-2.5X 105The joule excitation light 420 excites and detects the reaction product 2-hydroxyterephthalic acid, and the intensity of the emission light 430 of the reaction product 2-hydroxyterephthalic acid at the position of 450 nm is obtained.
With continued reference to fig. 14, the first group concentration in the reaction product is obtained according to the chemical emission intensity.
The method for obtaining the first group concentration according to the chemical emission intensity comprises the following steps: obtaining a first group-chemical emission intensity relation model; and acquiring corresponding first group concentration according to the chemical emission intensity by adopting the first group-chemical emission intensity relation model.
In this embodiment, the first group OH and the capture agent 210 terephthalic acid generate only 2-hydroxyterephthalic acid as a reaction product, and the 2-hydroxyterephthalic acid can generate light with a specific wavelength under excitation light, so that the relationship between the concentration of the first group and the chemical emission intensity of the reaction product 2-hydroxyterephthalic acid can be established by function conversion. And then according to the measured specific value of the chemical emission intensity of the reaction product 2-hydroxy terephthalic acid, the corresponding first group concentration can be obtained.
When the first radical concentration is obtained, since the volume of the solution in the container 300 is the sum of the volumes of the deionized water and the capture agent, i.e. the volume of the first radical solution, the number of the first radicals can be quantified by the product of the first radical concentration and the volume of the first radical solution.
The surface of the first wafer 200 is subjected to bond breaking treatment, so that the surface of the first wafer 200 has first groups. The capture agent 210 is capable of reacting with a first group on the surface of the first wafer 200 to form a reaction product. Since the reaction product can emit a large number of photons with a specific wavelength when returning to the ground state under a certain condition, the obtained reaction product is detected by a chemiluminescence method, and the concentration of the first group can be indirectly obtained through function conversion, that is, the bond breaking strength of the surface of the first wafer 200 after the bond breaking treatment can be reflected. Meanwhile, the obtained reaction product is detected by adopting a chemiluminescence method, the operation is simple, the sensitivity is high, and the strength condition of broken bonds on the surface of the first wafer can be quickly obtained.
FIG. 15 is a schematic flow chart of a model for obtaining the relationship between the first group and chemical emission intensity.
Referring to fig. 15, the method for obtaining the first group-chemical emission intensity relationship model includes:
s1: and performing multiple first treatments by adopting multiple first group solutions, wherein the concentrations of different first group solutions are different, and performing the first treatment once on each first group solution to obtain the chemical emission intensity corresponding to the first group solutions with multiple groups of concentrations.
S2: and establishing a first group-chemical emission intensity relation model according to the chemical emission intensities corresponding to the multiple groups of first group solutions with the concentrations and the concentrations of the first groups corresponding to the first group solutions in the reaction product.
The first processing includes: providing a first radical solution; adding a trapping agent into the first group solution, and reacting the first group solution with the trapping agent to generate a reaction product; and detecting the reaction product to obtain the chemical emission intensity of the reaction product.
In this example, the first radical solution was an OH-containing solution, the reaction product was 2-hydroxyterephthalic acid, and the scavenger was terephthalic acid. Specifically, the substance generating OH is one or more of hydrogen peroxide, potassium persulfate, sodium persulfate and potassium monopersulfate, and sulfate radical can react with hydroxide anion under alkaline condition to generate OH.
FIG. 16 is a graph of the linear relationship between the chemical emission intensity of the first radical solution and the reaction product.
Referring to fig. 16, the method for obtaining the first group-chemical emission intensity relationship model is used to establish a linear relationship between the chemical emission intensities of the first group solution and the reaction product.
As shown in FIG. 16, the X-coordinate is the concentration (umol/L) of the first radical solution, the Y-coordinate is the chemical emission intensity of 2-hydroxyterephthalic acid, and the Z-curve is the relationship between the chemical emission intensity of 2-hydroxyterephthalic acid and the concentration of the first radical solution. As can be seen from the figure, the chemical emission intensity of the 2-hydroxyterephthalic acid and the concentration of the first radical solution have a better linear relationship. Therefore, by detecting the chemical emission intensity of the reaction product, the concentration of. OH in the first radical solution can be known.
The method for detecting the broken bond strength of the wafer further comprises the following steps: obtaining a first group-wafer bonding force relation model; and acquiring the wafer bonding force according to the concentration of the first group by adopting the first group-wafer bonding force relation model.
Fig. 17 is a schematic flow chart of obtaining a first group-wafer bonding force relationship model.
Referring to fig. 17, the method for obtaining the first group-wafer bonding force relationship model includes:
s11: and providing a plurality of groups of wafers, wherein each group of wafers comprises a third wafer, a fourth wafer and a fifth wafer.
S12: performing secondary treatment on the multiple groups of wafers for multiple times to obtain the first group concentration in the reaction products on the surfaces of the multiple groups of third wafers and the wafer bonding force between the fourth wafer and the fifth wafer corresponding to the first group concentration;
s13: and establishing a first group-wafer bonding force relation model according to the concentrations of the multiple groups of first groups and the corresponding wafer bonding forces.
The second processing includes: providing a third wafer, a fourth wafer and a fifth wafer; performing key breaking treatment on the surface of the third wafer, the surface of the fourth wafer and the surface of the fifth wafer respectively to enable the surface of the third wafer, the surface of the fourth wafer and the surface of the fifth wafer to have a first group; adding a trapping agent on the surface of the third wafer, and reacting a first group on the surface of the third wafer with the trapping agent to form a reaction product; acquiring the concentration of a first group in a reaction product on the surface of the third wafer; bonding the fourth wafer and the fifth wafer after the key breaking treatment; and after the bonding treatment, detecting the wafer bonding force.
It should be noted that, when a group of wafers are subjected to the second processing for one time, the same bond breaking processing is respectively performed on the surface of the third wafer, the surface of the fourth wafer, and the surface of the fifth wafer, so that the concentration of the first group in the reaction product on the surface of the third wafer is measured, the bond breaking strength of the wafer on the surface of the fourth wafer subjected to the same bond breaking processing and the bond breaking strength of the wafer on the surface of the fifth wafer can be correspondingly reflected, and the measured wafer bonding force between the fourth wafer and the fifth wafer can directly establish a corresponding relationship with the concentration of the first group on the surface of the third wafer, so that a first group-wafer bonding force relationship model can be established.
The corresponding relation between the concentration of the first group and the bonding force of the wafer is established, so that the broken bond condition of the first group is obtained by detecting the concentration of the first group after a certain broken bond treatment, the condition of the subsequent bonding force of the wafer can be indirectly predicted, the bonding quality is improved, and the product yield after bonding is improved.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (9)
1. A method for detecting the broken bond strength of a wafer is characterized by comprising the following steps:
providing a first wafer;
performing bond breaking treatment on the surface of the first wafer to enable the surface of the first wafer to have a first group;
adding a trapping agent on the surface of the first wafer, and reacting a first group on the surface of the first wafer with the trapping agent to form a reaction product;
detecting the reaction product to obtain the chemical emission intensity of the reaction product;
and acquiring the first group concentration in the reaction product according to the chemical emission intensity.
2. The method for detecting the breaking strength of the wafer according to claim 1, wherein the first wafer comprises: the dielectric layer is positioned on the surface of the substrate, and the material of the dielectric layer is provided with Si-O bonds; the key breaking processing method comprises the following steps: carrying out plasma treatment on the surface of the first wafer to break Si-O bonds on the surface of the first wafer; after the plasma treatment, activating treatment is carried out on the surface of the first wafer, so that the surface of the first wafer is provided with first groups.
3. The method for detecting the breaking strength of the wafer according to claim 2, wherein the activating treatment method comprises: and treating the surface of the first wafer by using deionized water, and forming a first group on the surface of the first wafer.
4. The method for detecting wafer breaking strength according to claim 1, wherein the first group is: a hydroxyl radical.
5. The method for detecting wafer breaking strength as claimed in claim 4, wherein the capture agent is: terephthalic acid; the reaction product is: 2-hydroxy terephthalic acid.
6. The method for detecting wafer breaking strength according to claim 1, wherein the method for obtaining the concentration of the first group according to the chemical emission strength comprises: obtaining a first group-chemical emission intensity relation model; and acquiring corresponding first group concentration according to the chemical emission intensity by adopting the first group-chemical emission intensity relation model.
7. The method for detecting wafer breaking strength as claimed in claim 6, wherein the method for obtaining the first group-chemical emission strength relationship model includes: performing multiple first treatments by adopting multiple first group solutions, wherein the concentrations of different first group solutions are different, and performing the first treatment once on each first group solution to obtain the chemical emission intensities corresponding to multiple groups of first group solutions; establishing a first group-chemical emission intensity relation model according to the chemical emission intensities corresponding to the multiple groups of first group solutions with different concentrations and the concentration of a first group corresponding to the first group solution in a reaction product; the first processing includes: providing a first radical solution; adding the capture reagent into the first group solution, and reacting the first group solution with the capture reagent to generate the reaction product; and detecting the reaction product to obtain the chemical emission intensity of the reaction product.
8. The method for detecting the breaking strength of the wafer according to claim 1, further comprising: obtaining a first group-wafer bonding force relation model; and acquiring the wafer bonding force according to the concentration of the first group by adopting the first group-wafer bonding force relation model.
9. The method for detecting wafer breaking strength according to claim 8, wherein the method for obtaining the first group-wafer bonding force relationship model comprises: providing a plurality of groups of wafers, wherein each group of wafers comprises a third wafer, a fourth wafer and a fifth wafer; performing secondary treatment on the multiple groups of wafers for multiple times to obtain the first group concentration in the reaction products on the surfaces of the multiple groups of third wafers and the wafer bonding force between the fourth wafer and the fifth wafer corresponding to the first group concentration; establishing a first group-wafer bonding force relation model according to the concentrations of the multiple groups of first groups and the corresponding wafer bonding force; the second processing includes: providing a third wafer, a fourth wafer and a fifth wafer; performing key breaking treatment on the surface of the third wafer, the surface of the fourth wafer and the surface of the fifth wafer respectively to enable the surface of the third wafer, the surface of the fourth wafer and the surface of the fifth wafer to have a first group; adding a trapping agent on the surface of the third wafer, and reacting a first group on the surface of the third wafer with the trapping agent to form a reaction product; acquiring the concentration of a first group in a reaction product on the surface of the third wafer; bonding the fourth wafer and the fifth wafer after the key breaking treatment; and after the bonding treatment, detecting the wafer bonding force.
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| CN108088820A (en) * | 2017-12-14 | 2018-05-29 | 大连理工大学 | A kind of method that hydroxyl radical free radical is quantitatively detected using laser flash photolysis technology |
| CN109844915A (en) * | 2019-01-02 | 2019-06-04 | 长江存储科技有限责任公司 | Plasma-activated processing for wafer bonding |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20070111471A1 (en) * | 2003-12-02 | 2007-05-17 | Bondtech, Inc. | Bonding method, device produced by this method, and bonding device |
| CN107633997A (en) * | 2017-08-10 | 2018-01-26 | 长江存储科技有限责任公司 | A kind of wafer bonding method |
| CN108088820A (en) * | 2017-12-14 | 2018-05-29 | 大连理工大学 | A kind of method that hydroxyl radical free radical is quantitatively detected using laser flash photolysis technology |
| CN109844915A (en) * | 2019-01-02 | 2019-06-04 | 长江存储科技有限责任公司 | Plasma-activated processing for wafer bonding |
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