CN116046710A - Optical gas sensor and method of manufacture - Google Patents
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- CN116046710A CN116046710A CN202211726259.5A CN202211726259A CN116046710A CN 116046710 A CN116046710 A CN 116046710A CN 202211726259 A CN202211726259 A CN 202211726259A CN 116046710 A CN116046710 A CN 116046710A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 52
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- 238000005516 engineering process Methods 0.000 claims abstract description 11
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
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- 238000003698 laser cutting Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 60
- 238000002360 preparation method Methods 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000009461 vacuum packaging Methods 0.000 description 1
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- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
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- B81B2201/00—Specific applications of microelectromechanical systems
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Abstract
The invention discloses an optical gas sensor and a manufacturing method thereof, wherein the optical gas sensor comprises a light source component, a first cavity, a detector component, a second cavity and an optical filter, the light source component comprises a light-emitting layer, a first electrode structure and a first supporting layer, the light-emitting layer is electrically connected with the first electrode structure, and the light-emitting layer is connected with the first supporting layer; the first supporting layer is connected with a first cavity, the first cavity is provided with an inner cavity formed by etching, and the side wall of the first cavity is provided with a micro air hole channel; the detector assembly comprises a receiving layer, a second electrode structure and a second supporting layer, wherein the receiving layer is electrically connected with the second electrode structure, and the receiving layer is connected with the second supporting layer; the second supporting layer is connected with a second cavity, and the second cavity is provided with an inner cavity formed by etching; the filter is positioned between the first chamber and the second chamber. The optical sensor manufactured by the MEMS technology is packaged by the wafer bonding technology, and the technology is simple. The invention can be widely applied to the technical field of gas sensors.
Description
Technical Field
The invention relates to the technical field of gas sensors, in particular to an optical gas sensor and a manufacturing method thereof.
Background
The optical gas sensor is a sensor for measuring gas based on an optical principle and mainly comprises a spectrum absorption type gas sensor and a fluorescence type gas sensor, and the optical gas sensor mainly comprises a light source, a detector, a gas chamber and a circuit board. The spectral absorption type gas sensor utilizes the relation between the gas concentration and the absorption intensity (according to Lambert-Beer law) to determine the concentration of a gas component, and the spectral range comprises ultraviolet light, infrared light and visible light; the fluorescent gas sensor is configured such that after light irradiation, the energy of a gas molecule increases, and the gas molecule transitions to an excited state, and when the gas molecule returns to a ground state, the gas molecule releases energy in a fluorescent form, and the concentration of the gas can be detected by detecting the fluorescence intensity.
The existing optical gas sensor is complex in preparation, on one hand, because the module is complex in preparation, besides a light source and a detector, a gas chamber is also required to be prepared; on the other hand, because of more modules, the assembly is inconvenient, so that the mass production efficiency is low and the cost is high.
Disclosure of Invention
In order to solve at least one of the above technical problems, the present invention provides an optical gas sensor and a manufacturing method thereof, and the adopted technical scheme is as follows.
The optical gas sensor provided by the invention comprises a light source assembly, a first chamber, a detector assembly, a second chamber and a light filter, wherein the light source assembly comprises a light emitting layer, a first electrode structure and a first supporting layer, the light emitting layer is electrically connected with the first electrode structure, and the light emitting layer is connected with the first supporting layer; the first supporting layer is connected with the first cavity, the first cavity is provided with an inner cavity formed by etching, and the side wall of the first cavity is provided with a micro air hole channel; the detector assembly comprises a receiving layer, a second electrode structure and a second supporting layer, wherein the receiving layer is electrically connected with the second electrode structure, and the receiving layer is connected with the second supporting layer; the second supporting layer is connected with the second cavity, and the second cavity is provided with an inner cavity formed by etching; the filter is located between the first chamber and the second chamber.
In some embodiments of the invention, the light source assembly includes a first shielding layer disposed outside the light source assembly.
In certain embodiments of the invention, the detector assembly includes a second shielding layer disposed outside of the detector assembly.
In certain embodiments of the present invention, the light source assembly emits infrared light or ultraviolet light or visible light.
The manufacturing method provided by the invention prepares the optical gas sensor, and comprises the following steps:
preparing the light source component and the detector component respectively by utilizing an MEMS (micro electro mechanical system) process, and etching to form inner cavities of the first cavity and the second cavity;
connecting the light source assembly, the first chamber, the optical filter, the second chamber and the detector assembly by using a wafer bonding process;
cutting the bonded light-emitting layer, the bonded receiving layer and the bonded optical filter into small chips by using a laser cutting process;
and electrically connecting the small chips with the peripheral circuit board by using a surface mounting technology.
In some embodiments of the present invention, the wafer bonding process employs a wafer direct bonding process or a wafer anodic bonding process.
In some embodiments of the invention, the first chamber and the second chamber are directly bonded under the wafer bonding process.
The optical gas sensor provided by the invention comprises an infrared light source, an infrared detector, a first air chamber, a second air chamber, a light filtering component and a circuit board, wherein the infrared light source is provided with a first electrode pair; the infrared detector is provided with a second electrode pair; the infrared light source is connected with the first air chamber, and micro-channel air holes are formed in the side wall of the first air chamber; the infrared detector is connected with the second air chamber; the filter component is positioned between the first air chamber and the second air chamber; the first electrode pair and the second electrode pair are respectively and electrically connected with the circuit board.
In some embodiments of the present invention, the circuit board is provided with a first slot and a second slot, the first electrode pair is plugged with the first slot, and the second electrode pair is plugged with the second slot.
In some embodiments of the present invention, the infrared light source is configured as a silicon-based light source, the infrared detector is configured as a silicon-based detector, the first gas cell is configured as a silicon-based gas cell or a glass-based gas cell, the second gas cell is configured as a silicon-based gas cell or a glass-based gas cell, and the optical filter component is configured as a silicon-based optical filter.
The manufacturing method provided by the invention prepares the optical gas sensor, and comprises the following steps:
preparing the infrared light source on a silicon wafer by using an MEMS (micro electro mechanical system) process;
packaging the infrared light source, the first air chamber, the light filtering component, the second air chamber and the infrared detector through a bonding process;
and respectively connecting the first electrode pair and the second electrode pair with the circuit board.
The embodiment of the invention has at least the following beneficial effects: the optical sensor manufactured by the MEMS technology has the advantages of small volume, low cost, high precision, good consistency, batch preparation and the like; the first cavity and the second cavity are etched to form an inner cavity, so that the heat insulation effect is achieved, the heat insulation type air chamber can be directly used as an air chamber, the air chamber is not required to be additionally arranged, and the preparation cost and difficulty are reduced; the optical sensor is packaged by a wafer bonding process, and the process is simple. The invention can be widely applied to the technical field of gas sensors.
Drawings
The described and/or additional aspects and advantages of embodiments of the present invention will become apparent and readily appreciated from the following description taken in conjunction with the accompanying drawings. It should be noted that the embodiments shown in the drawings below are exemplary only and are not to be construed as limiting the invention.
FIG. 1 is a schematic diagram of an optical gas sensor according to some embodiments of the invention, the optical gas sensor having a light source assembly, a first chamber, a detector assembly, a second chamber, and a filter.
FIG. 2 is a schematic diagram of an optical gas sensor according to some embodiments of the present invention, wherein the optical gas sensor includes an infrared light source, an infrared detector, a first gas cell, a second gas cell, a filter component, and a circuit board.
Fig. 3 is a schematic diagram of the structure of the optical gas sensor in fig. 2.
Fig. 4 is a schematic cross-sectional structure of the optical gas sensor of fig. 2.
Reference numerals:
1. an infrared light source; 2. a first air chamber; 3. a light filtering component; 4. an infrared detector; 5. a second air chamber; 6. a microchannel air vent; 7. a first electrode pair; 8. a second electrode pair; 9. a first slot; 10. a second slot; 11. a circuit board;
21. a light emitting layer; 22. a first electrode structure; 23. a first support layer; 24. a first chamber; 25. a receiving layer; 26. a second electrode structure; 27. a second support layer; 28. a second chamber; 29. a light filter; 30. a first shielding layer; 31. and a second shielding layer.
Detailed Description
Embodiments of the present invention are described in detail below with reference to fig. 1 through 4, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention.
In the description of the present invention, it should be understood that, if the terms "center", "middle", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential", etc. are used as directions or positional relationships based on the directions shown in the drawings, the directions are merely for convenience of description and for simplification of description, and do not indicate or imply that the apparatus or element to be referred to must have a specific direction, be constructed and operated in a specific direction, and thus should not be construed as limiting the present invention. Furthermore, features defining "first", "second" may include one or more such features, either explicitly or implicitly. In the description of the present invention, unless otherwise indicated, the meaning of "a plurality" is two or more.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
The invention relates to an optical gas sensor, which comprises a light source component, a first cavity 24, a detector component, a second cavity 28 and a light filter 29, wherein a micro air hole channel is arranged on the side wall of the first cavity 24 and is used for gas circulation, the light source component is connected with the first cavity 24, the detector component is connected with the second cavity 28, the light filter 29 is positioned between the first cavity 24 and the second cavity 28, and the light filter 29 is used for selectively transmitting, reflecting, cutting off and attenuating spectral wavelengths.
Further, the first chamber 24 has an etched interior cavity and the second chamber 28 has an etched interior cavity. Specifically, dry etching or wet etching is used to form the interior of the first chamber 24 and the second chamber 28. It will be appreciated that the etched cavity ensures that the first chamber 24 and the second chamber 28 are integrally formed, has good thermal insulation, and can be used directly as a plenum. Compared with the traditional optical sensor, the optical gas sensor designed by the invention does not need an external air chamber, and reduces the manufacturing cost and difficulty.
Referring to the drawings, the light source assembly includes a light emitting layer 21, a first electrode structure 22 and a first supporting layer 23, the light emitting layer 21 is connected with the first supporting layer 23, the first supporting layer 23 is connected with a first chamber 24, the first supporting layer 23 is located between the light emitting layer 21 and the first chamber 24, the first supporting layer 23 is used for supporting and protecting the light emitting layer 21 and the first electrode structure 22, and the first chamber 24 is prevented from damaging the light emitting layer 21 and the first electrode structure 22 during preparation. The light-emitting layer 21 is electrically connected with the first electrode structure 22, the first electrode structure 22 is arranged as an electrode pair, the first electrode structure 22 is connected with a peripheral circuit board, and the peripheral circuit board can supply power for the light source assembly and also has the functions of signal acquisition, amplification, conversion and the like.
Referring to the drawings, the detector assembly comprises a receiving layer 25, a second electrode structure 26 and a second supporting layer 27, wherein the receiving layer 25 is connected with the second supporting layer 27, the second supporting layer 27 is connected with a second cavity 28, the second supporting layer 27 is positioned between the receiving layer 25 and the second cavity 28, and the second supporting layer 27 is used for supporting and protecting the receiving layer 25 and the second electrode structure 26 and preventing the second cavity 28 from damaging the receiving layer 25 and the second electrode structure 26 during preparation. The receiving layer 25 is electrically connected to the second electrode structure 26, the second electrode structure 26 is arranged as an electrode pair, the second electrode structure 26 is connected to a peripheral circuit board, and the peripheral circuit board can supply power to the detector assembly and has the functions of signal acquisition, amplification, conversion and the like.
Referring to the drawings, the light source assembly includes a first shielding layer 30, the first shielding layer 30 is disposed at an outer side of the light source assembly, and the light emitting layer 21 is positioned between the first shielding layer 30 and the first supporting layer 23. It will be appreciated that the first shielding layer 30 is configured to reduce the radiation efficiency of the light emitting layer 21 to the outside, and improve the radiation efficiency in the first chamber 24.
With reference to the figures, the detector assembly comprises a second shielding layer 31, the second shielding layer 31 being arranged outside the detector assembly, and the receiving layer 25 being located between the second shielding layer 31 and the second supporting layer 27. It can be understood that the second shielding layer 31 is used to reduce the radiation efficiency of the light emitting layer 21 to the outside, and improve the receiving efficiency of the receiving layer 25 to the spectrum.
As an embodiment, the light source assembly emits infrared light, and the light emitting layer 21 is capable of generating a spectrum of frequencies corresponding to the infrared light. Accordingly, the receiving layer 25 is capable of receiving a spectrum of the corresponding frequency.
Of course, as an alternative, it is also possible to design: the light source assembly emits ultraviolet light or visible light, and it is understood that the light emitting layer 21 is capable of generating a spectrum of ultraviolet light or visible light at a corresponding frequency.
As an embodiment, the detector assembly is provided as a pyroelectric detector or a photon detector, in particular as a thermopile detector, a pyroelectric detector, a photoconductive detector, a photovoltaic detector.
In combination with the structure of the optical gas sensor, the working process of the optical gas sensor is developed and introduced: the gas enters the first chamber 24 through the micro air hole channel, the light source component emits infrared light beams to pass through the first chamber 24, the gas absorbs infrared light with specific wavelength, when the infrared light passes through the optical filter 29, the optical filter 29 filters and selects the infrared light beams, the filtered infrared light enters the second chamber 28, the detector component receives and measures the infrared light absorption quantity with corresponding frequency, and the concentration of the gas component can be determined by combining the analysis of the peripheral circuit board.
The invention relates to a manufacturing method for preparing an optical gas sensor, which comprises the following steps of.
A-1, preparing a light source assembly and a detector assembly respectively by using MEMS technology, wherein the light source assembly is made into a wafer level light source, and inner cavities of the first cavity 24 and the second cavity 28 are formed by etching, and the MEMS technology comprises film plating, photoetching and etching.
And A-2, connecting the light source assembly, the first chamber 24, the optical filter 29, the second chamber 28 and the detector assembly into a whole by using a wafer bonding process.
And A-3, cutting the bonded light-emitting layer 21, receiving layer 25 and optical filter 29 into small chips by using a laser cutting process.
And A-4, electrically connecting the small chips with the peripheral circuit board by using a surface mount technology.
Specifically, the wafer bonding process adopts a wafer direct bonding process or a wafer anode bonding process. The wafer direct bonding process is to directly bond two or more pieces of materials together at a set temperature and pressure without externally connecting an adhesive and an electric field; the anodic bonding process bonds the silicon-based material and the glass-based material together at set temperature, pressure and voltage, and the wafer bonding process can realize vacuum packaging or inert gas packaging and improve the application performance of the light source component and the detector component.
In step a-2, the first chamber 24 and the second chamber 28 are directly bonded under the wafer bonding process, and the chambers of the first chamber 24 and the second chamber 28 are used as air chambers, which are simple in process, low in cost, high in precision, good in consistency and capable of mass production.
It can be appreciated that the light source assembly and the detector assembly are manufactured by MEMS technology, which reduces cost, improves accuracy, achieves good consistency, and can be mass produced.
The invention relates to an optical gas sensor, which comprises an infrared light source 1, an infrared detector 4, a first gas chamber 2, a second gas chamber 5, a light filtering component 3 and a circuit board 11, wherein the infrared light source 1 is connected with the first gas chamber 2, micro-channel air holes 6 are formed in the side wall of the first gas chamber 2, gas enters and exits through the micro-channel air holes 6, the infrared detector 4 is connected with the second gas chamber 5, and the light filtering component 3 is positioned between the first gas chamber 2 and the second gas chamber 5.
Further, the infrared light source 1 is provided with a first electrode pair 7, the infrared detector 4 is provided with a second electrode pair 8, and the first electrode pair 7 and the second electrode pair 8 are electrically connected with the circuit board 11, respectively. It will be appreciated that the first electrode pair 7 provides power to the infrared light source 1 to generate infrared radiant heat, the second electrode pair 8 provides for signal transmission and the circuit board 11 provides power for signal conversion.
As an embodiment, the circuit board 11 is provided with a first slot 9 and a second slot 10, the first electrode pair 7 is plugged with the first slot 9, and the second electrode pair 8 is plugged with the second slot 10, so that power supply and signal processing are realized.
The infrared light source 1 is arranged as a silicon-based light source and is prepared on a silicon wafer by utilizing an MEMS (micro electro mechanical systems) process, the infrared light source 1 can be prepared in batches by the process, the efficiency is high, the cost is low, and the uniformity of the infrared light source 1 is good.
The infrared detector 4 is configured as a silicon-based detector for receiving and measuring the amount of infrared absorption at the corresponding frequency. In some examples, the infrared detector 4 is provided as a heat detector, in particular, the infrared detector 4 is provided as a thermocouple detector, a thermopile detector, a pyroelectric detector, or a radiant heat detector. In some examples, the infrared detector 4 is provided as a photon detector, in particular, the infrared detector 4 is provided as a photoconductive detector, a photovoltaic detector, a magneto-optical detector, or a photo-emission detector.
Further, the first air cell 2 is provided as a silicon-based air cell or a glass-based air cell, and the second air cell 5 is provided as a silicon-based air cell or a glass-based air cell.
The filter member 3 is provided as a silicon-based filter for selectively transmitting, reflecting, cutting off and attenuating the spectral wavelengths.
The invention relates to a manufacturing method for preparing an optical gas sensor, which comprises the following steps of.
And B-1, preparing an infrared light source 1 on a silicon wafer by using an MEMS process.
And B-2, packaging the infrared light source 1, the first air chamber 2, the light filtering component 3, the second air chamber 5 and the infrared detector 4 through a bonding process, and connecting the two chambers into a whole. Specifically, the bonding process adopts a wafer direct bonding process or a wafer anode bonding process.
And B-3, respectively connecting the first electrode pair 7 and the second electrode pair 8 with a circuit board 11. Specifically, the first electrode pair 7 is plugged into the first slot 9 of the circuit board 11, and the second electrode pair 8 is plugged into the second slot 10 of the circuit board 11.
It can be understood that in the step B-2, the bonding process is adopted for packaging, so that the application performance of the optical gas sensor can be improved, the bonding process is simple to prepare and high in adhesive strength, and the miniaturization of the device can be realized.
In the description of the present specification, if a description appears that makes reference to the term "one embodiment," "some examples," "some embodiments," "an exemplary embodiment," "an example," "a particular example," or "some examples," etc., it is intended that the particular feature, structure, material, or characteristic described in connection with the embodiment or example be included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The embodiments of the present invention have been described in detail with reference to the drawings, but the present invention is not limited to the above embodiments, and various changes can be made within the knowledge of one of ordinary skill in the art without departing from the spirit of the present invention.
In the description of the present invention, the terms "and" if used in the singular are intended to mean "and" as opposed to "or". For example, the patent name "a A, B" describes that what is claimed in the present invention is: a technical scheme with a subject name A and a technical scheme with a subject name B.
Claims (11)
1. An optical gas sensor, characterized in that: comprising
The light source assembly comprises a light emitting layer (21), a first electrode structure (22) and a first supporting layer (23), wherein the light emitting layer (21) is electrically connected with the first electrode structure (22), and the light emitting layer (21) is connected with the first supporting layer (23);
the first supporting layer (23) is connected with the first chamber (24), the first chamber (24) is provided with an inner cavity formed by etching, and the side wall of the first chamber (24) is provided with a micro air hole channel;
a detector assembly comprising a receiving layer (25), a second electrode structure (26) and a second support layer (27), the receiving layer (25) being electrically connected to the second electrode structure (26), the receiving layer (25) being connected to the second support layer (27);
a second chamber (28), wherein the second supporting layer (27) is connected with the second chamber (28), and the second chamber (28) is provided with an inner cavity formed by etching;
-a filter (29), the filter (29) being located between the first chamber (24) and the second chamber (28).
2. The optical gas sensor of claim 1, wherein: the light source assembly includes a first shielding layer (30), the first shielding layer (30) being disposed outside the light source assembly.
3. The optical gas sensor of claim 1, wherein: the detector assembly comprises a second shielding layer (31), the second shielding layer (31) being arranged outside the detector assembly.
4. An optical gas sensor according to any one of claims 1 to 3, wherein: the light source assembly emits infrared light or ultraviolet light or visible light.
5. A method of manufacture, characterized by: the manufacturing method prepares the optical gas sensor according to any one of claims 1 to 4, and the flow of the manufacturing method comprises
Preparing the light source assembly and the detector assembly respectively by using a MEMS process, and etching to form inner cavities of the first chamber (24) and the second chamber (28);
connecting the light source assembly, the first chamber (24), the optical filter (29), the second chamber (28) and the detector assembly using a wafer bonding process;
cutting the bonded light-emitting layer (21), receiving layer (25) and optical filter (29) into small chips by using a laser cutting process;
and electrically connecting the small chips with the peripheral circuit board by using a surface mounting technology.
6. The manufacturing method according to claim 5, characterized in that: the wafer bonding process adopts a wafer direct bonding process or a wafer anode bonding process.
7. The manufacturing method according to claim 5 or 6, characterized in that: the first chamber (24) and the second chamber (28) are directly bonded under the wafer bonding process.
8. An optical gas sensor, characterized in that: comprising
An infrared light source (1), the infrared light source (1) being provided with a first electrode pair (7);
an infrared detector (4), the infrared detector (4) being provided with a second electrode pair (8);
the infrared light source (1) is connected with the first air chamber (2), and micro-channel air holes (6) are formed in the side wall of the first air chamber (2);
the infrared detector (4) is connected with the second air chamber (5);
-a filter member (3), the filter member (3) being located between the first air chamber (2) and the second air chamber (5);
-a circuit board (11), said first electrode pair (7) and said second electrode pair (8) being electrically connected to said circuit board (11), respectively.
9. The optical gas sensor of claim 8, wherein: the circuit board (11) is provided with a first slot (9) and a second slot (10), the first electrode pair (7) is spliced with the first slot (9), and the second electrode pair (8) is spliced with the second slot (10).
10. The optical gas sensor according to claim 8 or 9, characterized in that: the infrared light source (1) is arranged as a silicon-based light source, the infrared detector (4) is arranged as a silicon-based detector, the first air chamber (2) is arranged as a silicon-based air chamber or a glass-based air chamber, the second air chamber (5) is arranged as a silicon-based air chamber or a glass-based air chamber, and the light filtering component (3) is arranged as a silicon-based light filter.
11. A method of manufacture, characterized by: the manufacturing method prepares the optical gas sensor according to claim 10, and the flow of the manufacturing method comprises
-preparing said infrared light source (1) on a silicon wafer using MEMS technology;
packaging the infrared light source (1), the first air chamber (2), the light filtering component (3), the second air chamber (5) and the infrared detector (4) through a bonding process;
the first electrode pair (7) and the second electrode pair (8) are respectively connected with the circuit board (11).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211726259.5A CN116046710A (en) | 2022-12-30 | 2022-12-30 | Optical gas sensor and method of manufacture |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211726259.5A CN116046710A (en) | 2022-12-30 | 2022-12-30 | Optical gas sensor and method of manufacture |
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| CN116046710A true CN116046710A (en) | 2023-05-02 |
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| CN202211726259.5A Pending CN116046710A (en) | 2022-12-30 | 2022-12-30 | Optical gas sensor and method of manufacture |
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| Country | Link |
|---|---|
| CN (1) | CN116046710A (en) |
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2022
- 2022-12-30 CN CN202211726259.5A patent/CN116046710A/en active Pending
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