CN116937194A - Grounding terminal base and magnetron sputtering dielectric thin film deposition device comprising same - Google Patents
Grounding terminal base and magnetron sputtering dielectric thin film deposition device comprising same Download PDFInfo
- Publication number
- CN116937194A CN116937194A CN202311196611.3A CN202311196611A CN116937194A CN 116937194 A CN116937194 A CN 116937194A CN 202311196611 A CN202311196611 A CN 202311196611A CN 116937194 A CN116937194 A CN 116937194A
- Authority
- CN
- China
- Prior art keywords
- deposition
- terminal base
- hole
- base
- ground terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 21
- 238000000427 thin-film deposition Methods 0.000 title claims abstract description 16
- 238000000151 deposition Methods 0.000 claims abstract description 101
- 230000008021 deposition Effects 0.000 claims abstract description 101
- 239000010408 film Substances 0.000 claims abstract description 29
- 230000001965 increasing effect Effects 0.000 claims abstract description 12
- 238000004544 sputter deposition Methods 0.000 claims abstract description 10
- 239000000126 substance Substances 0.000 claims abstract description 7
- 239000007788 liquid Substances 0.000 claims description 18
- 238000001816 cooling Methods 0.000 claims description 15
- 230000003746 surface roughness Effects 0.000 claims description 14
- 238000005488 sandblasting Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 abstract description 36
- 230000008569 process Effects 0.000 abstract description 35
- 238000005137 deposition process Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000007921 spray Substances 0.000 description 5
- 238000007751 thermal spraying Methods 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 230000002035 prolonged effect Effects 0.000 description 3
- 239000003507 refrigerant Substances 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical group C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
- H01R4/58—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation characterised by the form or material of the contacting members
- H01R4/64—Connections between or with conductive parts having primarily a non-electric function, e.g. frame, casing, rail
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/20218—Modifications to facilitate cooling, ventilating, or heating using a liquid coolant without phase change in electronic enclosures
- H05K7/20272—Accessories for moving fluid, for expanding fluid, for connecting fluid conduits, for distributing fluid, for removing gas or for preventing leakage, e.g. pumps, tanks or manifolds
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a grounding terminal base and a magnetron sputtering dielectric thin film deposition device comprising the same. The grounding terminal base comprises a base body; the seat body is in a round table shape and is provided with a mounting hole which is matched with the wafer bearing table of the deposition device in a mounting way; the top of the seat body is provided with deposition holes which extend along the axial direction of the seat body, are arrayed and used for increasing the specific surface area and can prevent sputtering substances from reaching the bottom of the holes; the deposition hole is a conical hole and the bottom end diameter is 1.2 times of the top end diameter; the depth of the deposition hole is greater than or equal to 2 times the diameter of the top end of the deposition hole. According to the embodiment of the invention, the hole structures arranged in the array are formed on the grounding terminal base, so that the hole structures have enough large specific surface area, the charge density of the surface of the process chamber near the wafer in the deposition process is obviously reduced, the surface voltage is close to the grounding voltage, the stable progress of plasma discharge is maintained, and the deviation of the film deposition rate and the film performance is avoided.
Description
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to a grounding terminal base and a magnetron sputtering dielectric film deposition device comprising the same.
Background
Magnetron sputtering is a deposition process for dielectric films. As shown in fig. 1 for the magnetron sputtering dielectric thin film deposition apparatus 100, a wafer stage 108 is provided in a process chamber 107, a wafer 103 is placed on the wafer stage 108, and the process chamber 107 is provided with an exhaust port 109 and an intake port 110. Magnetron sputtering is a process in which high-energy plasma is used to bombard a target 101, ions or atoms sputtered from the target 101 escape under the action of a confining magnetic field of a rotating magnetron 102, and deposition is completed on a substrate wafer 103. When magnetron sputtering is used to deposit a dielectric film, an ac power source 104 (rf or pulsed dc) is typically used for sputtering deposition in order to avoid charge accumulation on the surface of the target 101. Because the positive and negative polarities of the alternating current power supply are periodically alternated, when the sputtering target is in a positive half cycle, electrons flow to the target surface, positive charges accumulated on the surface of the sputtering target are neutralized, and electrons are accumulated, so that the surface of the sputtering target presents negative bias, positive ions are attracted to bombard the target material in the negative half cycle of radio frequency voltage, and sputtering is realized.
During magnetron sputtering, high-speed ions bombard the sputtering region of the target 101, and sputtered metal ions are deposited on the surface of the wafer 103, but also on other surfaces of the reaction chamber, such as the surfaces of the process kit (liner 105) and the ring base member 111 (e.g., cover plate, etc.) disposed around the wafer carrier 108. When a large quantity of continuous films are deposited, positive charges on the surface of the process kit are accumulated, so that the charge density of the process kit is increased, the surface voltage of the process kit cannot be ensured to be the ground voltage, the phenomenon of unstable discharge is caused, and the film deposition rate and the film performance deviate.
When a radio frequency or pulse direct current sputtering process is adopted to coat a wafer, the escaped ions and atoms can carry huge heat, and plasma and atoms sputtered from the target 101 continuously bombard the surfaces of the wafer 103 and the process suite, so that the temperature of the process suite (the inner liner 105, the adapter 106 and the like) of the reaction cavity exceeds the temperature range of the process reaction, the process is not facilitated, film particles are coarsened, structural loosening and relaxation are caused, the film density is lower, and the quality of the film is affected.
It should be noted that the information disclosed in the above background section is only for enhancing understanding of the background of the present disclosure and thus may include information that does not constitute prior art known to those of ordinary skill in the art.
Disclosure of Invention
The embodiment of the invention aims to provide a grounding terminal base and a magnetron sputtering dielectric thin film deposition device comprising the same, and the large specific surface area provided by the grounding terminal base enables the charge density of the surface of a process chamber near a wafer in the deposition process to be obviously reduced, the surface voltage of the substrate is close to the grounding voltage, the stable performance of plasma discharge is maintained, and the deviation of the thin film deposition rate and the thin film performance is avoided.
In order to solve the technical problems described above, in a first aspect, an embodiment of the present invention provides a ground terminal base, where the ground terminal base is installed in a magnetron sputtering dielectric thin film deposition device, and the ground terminal base includes a base body;
the seat body is in a circular truncated cone shape and is provided with a mounting hole which is matched with a wafer bearing table of the deposition device in a mounting way;
the top of the seat body is provided with deposition holes which extend along the axial direction of the seat body, are arrayed and used for increasing the specific surface area and can prevent sputtering substances from reaching the bottom of the holes;
the deposition hole is a conical hole, and the bottom end diameter of the deposition hole is 1.2 times of the top end diameter of the deposition hole; the depth of the deposition hole is greater than or equal to 2 times of the diameter of the top end of the deposition hole.
In some examples, the top surface of the housing is textured.
In some examples, the texture comprises one or any combination of the following: zigzag lines or threads.
In some examples, the deposition apertures are arranged in the following manner:
the deposition holes are distributed around the center of the seat body in a plurality of circles, the number of the deposition holes in each circle is the same, the deposition holes in each circle are radially aligned, and the radial intervals of the deposition holes in each circle are the same;
the grain structure is saw teeth, and the saw teeth are distributed among the deposition holes in a ring shape around the center of the seat body.
In some examples, the top of the deposition hole is chamfered.
In some examples, the base top surface is a planar or tapered surface.
In some examples, the bottom of the seat 7-9 is provided with a cooling channel, the side wall of the seat is provided with a liquid inlet and a liquid outlet which are communicated with the cooling channel, and the cooling channel is distributed on the bottom of the seat in a ring shape.
In some examples, the top of the base body is sequentially subjected to sand blasting and meltallizing treatment to obtain a surface roughness structure; wherein, the surface roughness Ra after sand blasting is 1-10 mu m; the thickness of the fused layer obtained by the fused treatment is 0.06-0.15 mu m, and the surface roughness Ra of the fused layer is 15-50 mu m.
In some examples, the inner wall of the deposition bore is provided with a plurality of annular grooves spaced axially therealong.
In a second aspect, embodiments of the present invention further provide a magnetron sputtering dielectric thin film deposition apparatus, including a ground terminal base as described above.
According to the technical scheme, the invention has at least the following advantages and positive effects:
according to the grounding terminal base and the magnetron sputtering dielectric film deposition device comprising the same, the grounding terminal base is arranged around the wafer carrying table carrying the wafer, the top of the grounding terminal base is provided with the deposition holes which extend along the axial direction of the grounding terminal base and are arrayed and used for increasing the specific surface area, so that the grounding terminal base has a large enough specific surface area, the charge density of accumulated charges deposited on the top surface of the grounding terminal base is greatly reduced, the shape of the deposition holes can prevent sputtering substances from reaching the bottom of the deposition holes, dielectric deposition can be prevented from reaching the bottom of the holes, the grounding voltage on the surface of the grounding terminal base can be maintained, plasma discharge can be maintained to be stably carried out, and deviation of film deposition rate and film performance is avoided.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described below, it being understood that the drawings in the following description are only embodiments of the present invention and that other drawings may be obtained according to the drawings provided without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a conventional magnetron sputtering dielectric thin film deposition apparatus.
Fig. 2 is a schematic structural diagram of a magnetron sputtering dielectric thin film deposition device according to an embodiment of the invention.
Fig. 3 is a schematic structural diagram of a ground terminal base according to an embodiment of the present invention.
Fig. 4 is a schematic structural diagram of a cooling water channel of a ground terminal base according to an embodiment of the present invention.
Fig. 5 is a schematic structural diagram of a ground terminal base with a truncated cone-shaped top according to an embodiment of the present invention.
Fig. 6 is a schematic structural diagram of a ground terminal base with a horizontal surface at the top according to an embodiment of the present invention.
Fig. 7 is a schematic structural diagram of a ground terminal base according to an embodiment of the present invention.
Fig. 8 is a schematic cross-sectional view of the ground terminal base shown in fig. 7.
Fig. 9 is a schematic top view of the ground terminal base shown in fig. 7.
Fig. 10 is a schematic partial structure of another grounding terminal base according to an embodiment of the present invention.
In the figure: 101. a target material; 102. a magnetron; 103. a wafer; 104. an alternating current power supply; 105. a lining; 106. an adapter; 107. a process chamber; 108. a wafer carrier; 109. an exhaust port; 110. an air inlet; 111. a ring base member; 200. a ground terminal base; 201. a mounting hole; 202. a deposition hole; 203. the bottom of the seat body; 204. a cooling channel; 2041. a liquid outlet; 2042. a liquid inlet; 205. a grain structure; 206. an annular groove; 207. a surface roughness structure.
Description of the embodiments
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the following detailed description of the embodiments of the present invention will be given with reference to the accompanying drawings. However, those of ordinary skill in the art will understand that in various embodiments of the present invention, numerous technical details have been set forth in order to provide a better understanding of the present invention. However, the claimed invention may be practiced without these specific details and with various changes and modifications based on the following embodiments.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "upper", "lower", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the apparatus or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
It should be noted that, unless explicitly stated otherwise, the terms "connected," "connected," and the like should be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements.
Examples
Referring to fig. 2 to 5, an embodiment of the present invention provides a ground terminal base that can be disposed between related components in a process chamber of a magnetron sputtering dielectric thin film deposition apparatus 100 and a wafer carrier, wherein the ground terminal base 200 has a specific surface area large enough to enable a surface voltage of the ground terminal base to approach a ground voltage during a large-scale continuous deposition process, so as to maintain stable plasma discharge and prevent deviation of a thin film deposition rate and a thin film performance. As shown in fig. 3, the ground terminal base 200 of the embodiment of the present invention includes: the base body is a truncated cone-shaped base body and is provided with a mounting hole 201 which is in mounting fit with the wafer carrying table 108 of the deposition device 100. The top of the susceptor is provided with deposition holes 202 extending in the axial direction thereof and arranged in an array for increasing the specific surface area and capable of blocking the sputtered material from reaching the bottom of the holes.
The mounting hole 201 may be a circular through hole, and it is understood that the shape and size of the mounting hole are not particularly limited in this embodiment, as long as the ground terminal base 200 can be disposed around the wafer stage 108 of the deposition apparatus 100 and can work in cooperation with the wafer stage 108.
The top surface of the susceptor faces the inside of the process chamber of the deposition apparatus, and during the deposition of the dielectric thin film, plasma, positive ions sputtered from the target 101, and the like are deposited on the top surface of the susceptor, and a plurality of deposition holes 202 are formed in an array arrangement on the top of the susceptor in order to increase the specific surface area of the susceptor. The plurality of deposition holes 202 arranged in an array form a dense hole array, which can significantly increase the specific surface area of the susceptor. The plasma may be deposited on the bottom surface of the deposition hole 202, and positive ions sputtered from the target 101 may be deposited on the top surface of the susceptor and a portion of the surface of the top of the deposition hole 202, and may not reach the bottom of the deposition hole 202.
By way of example and not limitation, the deposition apertures 202 may be arranged in the following manner: the deposition holes 202 are distributed in a plurality of circles around the center of the susceptor, the number of deposition holes in each circle is the same, the deposition holes in each circle are radially aligned, and the radial spacing of the deposition holes in each circle is the same. The arrangement mode of the deposition holes has good symmetry, large specific surface area and easy processing. It will be appreciated that the number of deposition apertures per revolution may also increase gradually from the centre to the periphery. The size of each ring of deposition holes may be the same or gradually increase from the inner ring to the outer periphery, and the specific arrangement, shape, size, etc. of the deposition holes are not particularly limited in this embodiment.
Meanwhile, the shape of the deposition hole 202 adopts a hole structure capable of blocking sputtered substances from reaching the bottom of the hole, so that positive ions sputtered from the target are not easy to reach the bottom of the deposition hole 202, plasma can be deposited at the bottom of the deposition hole 202, and the bottom surface of the deposition hole 202 can be kept grounded because a dielectric layer is not formed. Illustratively, the deposition hole 202 may be a tapered hole with a bottom end having a diameter 1.2 times that of a top end such that the deposition hole has a small top end opening and a large bottom end opening, and the material sputtered from the target may be mostly deposited on the upper surface of the deposition hole 202 without reaching the bottom of the deposition hole 202. Further, the depth of the deposition hole 202 may be greater than or equal to 2 times the diameter of the top end of the deposition hole, with a large hole depth and a small top opening being advantageous for blocking sputtered material from reaching the bottom of the deposition hole 202.
It should be noted that, in order to prevent the tip discharge, the top of the deposition hole can form a chamfer, and the smooth arc chamfer avoids the top of the deposition hole from forming a steep right-angle structure, thereby avoiding the tip discharge caused by too dense deposition of sputtering substances and prolonging the service life of the grounding terminal base.
As shown in fig. 5, the base top surface may be a conical plane, as shown in fig. 6, the base top surface may be a planar plane. The top of the base is made into a frustum shape, and the ground terminal base is matched with related parts of a process chamber of the deposition device during installation, so that interference between the ground terminal base and the related parts is avoided, and the ground terminal base is easier to install into the process chamber. The top surface of the base can also adopt a horizontal plane structure, and the processing is easy, as long as the installation of the grounding terminal base is not affected and the grounding terminal base has enough large specific surface area.
As shown in fig. 4, in order to improve the heat dissipation performance of the ground terminal base, the base bottom 203 may be provided with a cooling channel 204, and the base sidewall is provided with a liquid inlet 2042 and a liquid outlet 2041 that are in communication with the cooling channel 204. The base bottom 203 may be a circular plate made of a metal material (aluminum alloy or titanium alloy, etc.). The base bottom 203 and the base portion having the deposition hole 202 may be in an integral structure, or the base bottom 203 and the base portion having the deposition hole 202 may be in a separate structure, and the two may be connected by a fastener or a tight fit manner, and the heat conducting capability may be improved by disposing a heat conducting material between the facing surfaces of the two. For example, the cooling channels 204 may be distributed in an annular shape at the bottom 203 of the base. It will be appreciated that the cooling channels 204 of the base 203 may be single or multiple turns, or may be single or multiple layers. The liquid inlet 2042 and the liquid outlet 2041 are both disposed outside the peripheral wall of the bottom of the base, and the cooling channel 24 can be connected with an external refrigerant source through the liquid inlet 2042 and the liquid outlet 2041. The liquid inlet 2042 and the liquid outlet 2041 can be connected with the refrigerant source by welding or other suitable modes, and sealing rings can be arranged at the liquid inlet 2042 and the liquid outlet 2041, so that the tightness of connection is improved. When the cooling device is used, the liquid inlet 2042 and the liquid outlet 2041 are connected with an external refrigerant source, so that a cooling medium continuously circulates in the cooling channel 204 to rapidly take away a large amount of heat, the heat conduction of a process kit around the wafer carrying table 108 in the process chamber can be effectively increased through the heat conduction performance of the grounding terminal base 200, the temperature rise phenomenon of a substrate is restrained in the plasma bombardment process, the reaction area is stably maintained at a proper process temperature, the influence of the temperature rise of the reaction area on the bottom and the film is avoided, and the product quality can be effectively improved.
As shown in fig. 7 to 9, the top surface of the base may be formed with a texture 205. Texture 205 may include one or any combination of the following: zigzag lines or threads. The texture 205 may be distributed over the surface of the top of the housing. Illustratively, the texture 205 may be a saw tooth texture, and the saw teeth are distributed between the deposition holes 202 in a ring shape around the center of the base, that is, the saw tooth texture is disposed between two adjacent deposition holes, and the saw tooth texture may include one or more saw teeth, and the saw tooth texture may also include a tooth slot. It is understood that the texture 205 may be threads or other textures, or the texture 205 may further comprise two or more of the foregoing textures. Wherein, the depth of the thread can be between 0.1 mm and 0.6 mm. The tooth groove depth of the sawtooth lines or the tooth height can be between 0.1 and 0.6 mm. The texture may be formed by a cutter or the like, which is known to those skilled in the art, and will not be described in detail herein. By forming the grain structure 205 on the top surface of the base body, the roughness of the top surface of the base body can be increased, so that the adhesiveness and the binding force of the base of the grounding terminal are increased, the granularity and the firmness of the film formed on the surface of the base of the grounding terminal in the reaction process are better, the film is not easy to fall off, the service life of the base of the grounding terminal can be prolonged, and the service efficiency of the dielectric film deposition device is further improved.
As a further improvement, in one example, the inner wall of the deposition bore 202 may be provided with a plurality of annular grooves 206 spaced apart along its axial direction. The specific surface area of the ground terminal base can be further increased by the annular groove 206 structure. The plurality of annular grooves 206 may be evenly spaced axially. The annular groove 206 may be a rectangular groove or a V-shaped groove, etc. The number of annular grooves 206 may be 3 to 10, and may be specifically determined according to the hole depth of the deposition hole 202. The present embodiment is not particularly limited in shape, number, size, etc. of the annular grooves 206.
As shown in fig. 10, in some examples, the top of the base is sequentially sandblasted and then melt-shot to obtain a rough surface structure. The surface roughness Ra after the sand blasting is 1-10 mu m. The thickness of the fused layer obtained by the fused treatment is 0.06-0.15 mu m, and the surface roughness Ra of the fused layer is 15-50 mu m. The grit blasted area includes the surface of the top of the susceptor and the upper wall surfaces of all deposition holes 202. The sand blasting treatment may be performed by a sand blasting process known to those skilled in the art, so that the obtained surface roughness Ra is between 15 and 50 μm, which is advantageous for continuing to obtain a desired fused layer. The thermal spraying or spray welding is also known as a thermal spraying process, and the material for the thermal spraying can be aluminum or titanium to obtain a thermal spraying layer with a thickness of 0.06-0.15 μm and a surface roughness Ra of 15-50 μm. After sand blasting and meltallizing treatment, the specific surface area of the grounding terminal base can be obviously improved, the adhesiveness and the binding force are improved, a film layer with good particle uniformity is formed on the surface of the grounding terminal base in the film deposition process, and the film is not easy to fall off, so that the service life of the grounding terminal base can be further prolonged.
By way of example and not limitation, in one example, the process of making the ground terminal base may include: firstly, preparing a truncated cone-shaped grounding terminal base by adopting metals such as aluminum alloy or titanium alloy, wherein the top of the truncated cone-shaped grounding terminal base can be processed into a frustum shape, then forming a deposition hole array on the grounding terminal base, forming a plurality of annular grooves on the hole wall of the deposition hole, forming a concentric annular saw tooth grain structure among the plurality of circles of deposition holes, and then carrying out sand blasting and spray on the grounding terminal base, wherein the surface roughness Ra of the sand blasted grounding terminal base can be 1-10 mu m, the thickness of a spray layer can be 0.06-0.15 mu m, the spray material can be aluminum or titanium, and the surface roughness Ra of the spray layer can be 15-50 mu m.
Compared with the prior art, the grounding terminal base provided by the embodiment of the invention has the advantages that the grounding terminal base has enough large specific surface area through the arrangement of the hole array, the charge density of accumulated charges deposited on the top surface of the grounding terminal base is greatly reduced, the shape of the deposition hole can prevent sputtering substances from reaching the bottom of the deposition hole, dielectrics can be prevented from being deposited on the bottom of the hole to form a film, the grounding voltage can be maintained on the surface of the grounding terminal base, the stable performance of plasma discharge is maintained, and the deviation of the film deposition rate and the film performance is avoided. The texture structure is formed on the top surface of the grounding terminal base, so that the specific surface area of the grounding terminal base is further increased, and the grounding level of the surface voltage of the grounding terminal base is enhanced; the specific surface area of the grounding terminal base can be further increased by forming a plurality of annular grooves on the hole wall of the deposition hole; the surface roughness structure is formed by carrying out sand blasting and meltallizing treatment on the top of the grounding terminal base, so that the adhesiveness and the binding force of the grounding terminal base can be improved, the quality of a film deposited on the surface of the grounding terminal base can be improved, the film can be prevented from peeling off, the service life of the grounding terminal base can be further prolonged, and the specific surface area of the grounding terminal base can be further and greatly improved.
The method for using the ground terminal base of the magnetron sputtering dielectric thin film deposition apparatus according to the embodiment in combination with fig. 2 is as follows:
the ground terminal base 200 is installed around the wafer stage 108 of the magnetron sputtering dielectric thin film deposition apparatus 100, and since the ground terminal base 200 has a sufficiently large specific surface area, the surface voltage of the ground terminal base 200 can be maintained close to the ground voltage during the continuous mass thin film deposition process, so that plasma can be stably discharged. Meanwhile, the cooling medium circulating in the cooling channel can enable the process kit of the deposition device to dissipate heat in time through the grounding terminal base, so that stable process temperature is maintained in the process chamber. After a certain period of time, the ground terminal base 200 may be cleaned with other process kits, cleaned of deposited films, re-sandblasted, and re-melted, and then installed into a deposition apparatus for reuse.
Examples
With continued reference to fig. 2, an embodiment of the present invention further provides a magnetron sputtering dielectric film deposition apparatus. The deposition apparatus 100 includes: the target 101, magnetron 102, wafer 103, ac power source 104, liner 105, adapter 106, process chamber 107, wafer carrier 108, exhaust port 109, gas inlet 110, and ground terminal pedestal 200 as described in any of the preceding embodiments. The ground terminal mount 200 is disposed around the wafer carrier 108. The ground terminal mount 200 is in contact with the process chamber and wafer carrier, and can both form the bottom surface of the process chamber so that plasma and target sputter species are deposited on the top surface thereof, and can also be used to dissipate heat from the wafer and its surrounding process kit. The target 101 may be a ceramic target such as ZrO2, tiO2, al2O3, ceO2, or a metal target such as Zr, ti, al, ce.
It will be understood by those of ordinary skill in the art that the foregoing embodiments are specific examples of carrying out the invention and that various changes in form and details may be made therein without departing from the spirit and scope of the invention.
Claims (10)
1. A ground terminal mount, wherein the ground terminal mount is mounted within a magnetron sputtering dielectric film deposition apparatus, the ground terminal mount comprising a housing;
the seat body is in a circular truncated cone shape and is provided with a mounting hole which is matched with a wafer bearing table of the deposition device in a mounting way;
the top of the seat body is provided with deposition holes which extend along the axial direction of the seat body, are arrayed and used for increasing the specific surface area and can prevent sputtering substances from reaching the bottom of the holes;
the deposition hole is a conical hole, and the bottom end diameter of the deposition hole is 1.2 times of the top end diameter of the deposition hole; the depth of the deposition hole is greater than or equal to 2 times of the diameter of the top end of the deposition hole.
2. The ground terminal base of claim 1, wherein the base top surface is textured.
3. The ground terminal base of claim 2, wherein the textured structure comprises one or any combination of the following: zigzag lines or threads.
4. The ground terminal base of claim 2, wherein the deposition holes are arranged in the following manner:
the deposition holes are distributed around the center of the seat body in a plurality of circles, the number of the deposition holes in each circle is the same, the deposition holes in each circle are radially aligned, and the radial intervals of the deposition holes in each circle are the same;
the grain structure is saw teeth, and the saw teeth are distributed among the deposition holes in a ring shape around the center of the seat body.
5. The ground terminal base of claim 1, wherein a top end of the deposition hole is chamfered.
6. The ground terminal base of claim 1, wherein the base top surface is a planar or tapered surface.
7. The ground terminal base of claim 1, wherein a cooling channel is provided at the bottom of the base, a liquid inlet and a liquid outlet are provided on the side wall of the base, which are communicated with the cooling channel, and the cooling channel is distributed at the bottom of the base in a ring shape.
8. The ground terminal base of claim 1, wherein the top of the base is sequentially sandblasted and melt-blown to obtain a surface roughness structure; wherein, the surface roughness Ra after sand blasting is 1-10 mu m; the thickness of the fused layer obtained by the fused treatment is 0.06-0.15 mu m, and the surface roughness Ra of the fused layer is 15-50 mu m.
9. The ground terminal base of any one of claims 1-8, wherein the inner wall of the deposition bore is provided with a plurality of annular grooves spaced axially therealong.
10. A magnetron sputtering dielectric thin film deposition apparatus comprising the ground terminal base according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311196611.3A CN116937194A (en) | 2023-09-18 | 2023-09-18 | Grounding terminal base and magnetron sputtering dielectric thin film deposition device comprising same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311196611.3A CN116937194A (en) | 2023-09-18 | 2023-09-18 | Grounding terminal base and magnetron sputtering dielectric thin film deposition device comprising same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116937194A true CN116937194A (en) | 2023-10-24 |
Family
ID=88377528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311196611.3A Pending CN116937194A (en) | 2023-09-18 | 2023-09-18 | Grounding terminal base and magnetron sputtering dielectric thin film deposition device comprising same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116937194A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1340634A (en) * | 2000-07-25 | 2002-03-20 | 株式会社爱发科 | Sputtering equipment |
| CN109576665A (en) * | 2018-06-22 | 2019-04-05 | 新奥科技发展有限公司 | A kind of ion source, coating apparatus and film plating process |
| CN209890725U (en) * | 2019-02-14 | 2020-01-03 | 上海陛通半导体能源科技股份有限公司 | Equipment for physical vapor deposition of metal oxide or nitride film |
| CN110684945A (en) * | 2018-07-05 | 2020-01-14 | 北京铂阳顶荣光伏科技有限公司 | Sputtering deposition device with shielding and method |
| CN111155068A (en) * | 2020-04-02 | 2020-05-15 | 上海陛通半导体能源科技股份有限公司 | Physical vapor deposition pore filling equipment |
| CN115679271A (en) * | 2021-07-22 | 2023-02-03 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber |
-
2023
- 2023-09-18 CN CN202311196611.3A patent/CN116937194A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1340634A (en) * | 2000-07-25 | 2002-03-20 | 株式会社爱发科 | Sputtering equipment |
| CN109576665A (en) * | 2018-06-22 | 2019-04-05 | 新奥科技发展有限公司 | A kind of ion source, coating apparatus and film plating process |
| CN110684945A (en) * | 2018-07-05 | 2020-01-14 | 北京铂阳顶荣光伏科技有限公司 | Sputtering deposition device with shielding and method |
| CN209890725U (en) * | 2019-02-14 | 2020-01-03 | 上海陛通半导体能源科技股份有限公司 | Equipment for physical vapor deposition of metal oxide or nitride film |
| CN111155068A (en) * | 2020-04-02 | 2020-05-15 | 上海陛通半导体能源科技股份有限公司 | Physical vapor deposition pore filling equipment |
| CN115679271A (en) * | 2021-07-22 | 2023-02-03 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI702636B (en) | Biasable flux optimizer/collimator for pvd sputter chamber | |
| CN101787519B (en) | Process kit for substrate processing chamber | |
| KR101356144B1 (en) | Target and process kit components for sputtering chamber | |
| US20090308739A1 (en) | Wafer processing deposition shielding components | |
| JP2018535324A (en) | Precoated shield for use in VHF-RF PVD chambers | |
| US20060032741A1 (en) | Sputtering cathode adapter assembly and method | |
| KR101046958B1 (en) | Design of hardware features to facilitate arc-spray coating applications and functions | |
| JP2004522307A (en) | Inductively coupled plasma processing system | |
| WO2010123680A2 (en) | Wafer processing deposition shielding components | |
| JP5417437B2 (en) | Film forming method and film forming apparatus | |
| CN116937194A (en) | Grounding terminal base and magnetron sputtering dielectric thin film deposition device comprising same | |
| TWI727477B (en) | Reaction chamber and semiconductor processing equipment | |
| TW202120722A (en) | Methods and apparatus for physical vapor deposition (pvd) dielectric deposition | |
| CN116979282A (en) | Grounding terminal base and magnetron sputtering device comprising same | |
| TWI770421B (en) | Sputtering apparatus and sputtering method | |
| TWI801632B (en) | Process kits for plasma processing chambers, process kits for rfpvd chambers, and pvd chambers | |
| CN109477219B (en) | Single oxide metal deposition chamber | |
| US20210043429A1 (en) | Coating for chamber particle reduction | |
| TWI839710B (en) | Biasable flux optimizer/collimator for pvd sputter chamber | |
| US20210222289A1 (en) | Sputtering apparatus | |
| JP2004137534A (en) | Sputtering apparatus | |
| CN118127470A (en) | Biasable flux optimizer/collimator for PVD sputtering chamber | |
| KR19980042709A (en) | Coated Deposition Chamber Devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |