CN116936701A - LED epitaxial wafer, preparation method and LED chip - Google Patents
LED epitaxial wafer, preparation method and LED chip Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 52
- 239000004047 hole gas Substances 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 230000000737 periodic effect Effects 0.000 claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 10
- 230000006872 improvement Effects 0.000 abstract description 2
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- 229910002601 GaN Inorganic materials 0.000 description 51
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- 239000000243 solution Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 10
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- 230000009286 beneficial effect Effects 0.000 description 3
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- 238000001534 heteroepitaxy Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
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- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
Abstract
The invention discloses a light-emitting diode epitaxial wafer, a preparation method thereof and an LED chip, and relates to the technical field of semiconductor devices, wherein the epitaxial wafer comprises a substrate and further comprises: the buffer layer, the undoped GaN layer, the N-type GaN layer, the multiple quantum well layer and the P-type semiconductor layer are sequentially laminated on the substrate; the P-type semiconductor layer comprises a leakage shielding SiN layer, a periodic overlapping structure layer and a high-doped Mg-BInGaN layer which are sequentially laminated on the multiple quantum well layer, wherein the periodic overlapping structure layer comprises a two-dimensional hole gas InGaN layer and a low-doped Mg-AlN layer which are periodically overlapped. The invention solves the technical problems that the P-type semiconductor layer in the prior art has electric leakage and reduced photoelectric performance, and the effective mass of holes is far larger than that of electrons, the transmission speed of the holes is lower than that of electrons, and the quantum efficiency of the holes injected into the holes is lower than that of electrons, so that the improvement of the luminous efficiency is influenced.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a light-emitting diode epitaxial wafer, a preparation method and an LED chip.
Background
Semiconductor light emitting diodes can convert electrical energy into light energy. The LED is a solid-state light source, has the characteristics of relatively low energy consumption, rapid response, small volume and the like, and can be applied to multiple scenes such as common illumination, backlight and the like. The LED has gradually replaced the conventional illumination light source by virtue of its high light efficiency, and has become a new generation of light source, resulting in a new illumination revolution.
To reduce the resistance of hole injection into the active region, P-type semiconductors are typically designed to be thin, within about 200 nm. Because the GaN background carrier concentration of MOCVD growth is higher (electrons), the activation energy of adding Mg is larger, and the Mg doping concentration in the P-type semiconductor is about 2x10 20 atoms/cm 3 About, too high Mg doping concentration can damage crystal quality, while a lower doping concentration can affect hole concentration.
However, the energy level of the Mg acceptor is deep, about 170meV, and the ionization rate of Mg at room temperature is only about 1%; secondly, part of defects extend from the multiple quantum well layer to the P-type semiconductor layer, so that the P-type semiconductor layer leaks electricity, and the photoelectric performance is reduced; finally, since the effective mass of holes is much larger than electrons, the transfer speed is also lower than that of electrons, and thus the quantum efficiency of holes injected into electrons is also lower, thereby affecting the improvement of luminous efficiency.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a light-emitting diode epitaxial wafer, a preparation method and an LED chip, and aims to solve the technical problems recorded in the prior art so as to improve the luminous efficiency of the light-emitting diode epitaxial wafer.
A first aspect of the present invention provides a light emitting diode epitaxial wafer, including a substrate, the light emitting diode epitaxial wafer further including:
the buffer layer, the undoped GaN layer, the N-type GaN layer, the multiple quantum well layer and the P-type semiconductor layer are sequentially laminated on the substrate;
the P-type semiconductor layer comprises a leakage shielding SiN layer, a periodic overlapping structure layer and a high-doped Mg-BInGaN layer which are sequentially laminated on the multiple quantum well layer, wherein the periodic overlapping structure layer comprises a two-dimensional hole gas InGaN layer and a low-doped Mg-AlN layer which are periodically overlapped.
According to an aspect of the above technical solution, the thickness of the leakage shielding SiN layer is 1nm-10nm, the thickness of the two-dimensional hole gas InGaN layer is 0.5nm-5nm, the thickness of the low Mg-AlN doped layer is 5nm-50nm, and the thickness of the high Mg-BInGaN doped layer is 10nm-100nm.
According to an aspect of the above technical solution, the In component In the two-dimensional hole gas InGaN layer is 0.01-0.2, the B component In the Mg-BInGaN layer is 0.01-0.5, and the In component is 0.01-0.1.
According to one aspect of the above technical solution, the doping concentration of Mg element in the low Mg-AlN layer is 1×10 17 atoms/cm 3 -1x10 19 atoms/cm 3 The doping concentration of Mg element in the high-doped Mg-BInGaN layer is 1x10 19 atoms/cm 3 -1x10 21 atoms/cm 3 。
According to an aspect of the above technical solution, the period of alternating lamination of the two-dimensional hole gas InGaN layer and the low Mg-AlN layer is 1-10.
The second aspect of the present invention provides a method for preparing a light emitting diode epitaxial wafer, where the method is used to prepare the light emitting diode epitaxial wafer in the above technical solution, and the method includes:
providing a substrate;
sequentially depositing a buffer layer, an undoped GaN layer, an N-type GaN layer and a multiple quantum well layer on the substrate;
growing a P-type semiconductor layer on the multi-quantum well layer under a preset growth condition;
the P-type semiconductor layer comprises a leakage shielding SiN layer, a periodic overlapping structure layer and a high-doped Mg-BInGaN layer, wherein the periodic overlapping structure layer comprises a two-dimensional hole gas InGaN layer and a low-doped Mg-AlN layer which are overlapped periodically.
According to one aspect of the above technical solution, the growth atmosphere of the P-type semiconductor layer includes N 2 、H 2 With NH 3 ，N 2 、H 2 With NH 3 The ratio of (2) is 1:1:1-1:10:10.
According to an aspect of the above technical solution, the growth temperature of the P-type semiconductor layer is 800 ℃ to 1000 ℃.
According to an aspect of the above technical solution, the growth pressure of the P-type semiconductor layer is 50torr-300torr.
The third aspect of the present invention provides an LED chip, where the LED chip includes the LED epitaxial wafer according to the above technical solution.
Compared with the prior art, the LED epitaxial wafer, the preparation method and the LED chip have the beneficial effects that:
firstly, because the GaN-based light emitting diode is heteroepitaxy, a great number of defects are generated in the GaN epitaxial layer, part of defects even pass through the multi-quantum well layer to the P-type semiconductor layer, in addition, the crystal quality is damaged due to the fact that the Mg doping concentration of the P-type semiconductor layer is too high, so that the electric leakage of the GaN-based light emitting diode is caused, and the deposited electric leakage shielding SiN layer can effectively reduce the extension of the epitaxial defects to the P-type semiconductor layer, reduce the electric leakage channel of the light emitting diode and improve the photoelectric performance; secondly, depositing a two-dimensional hole gas InGaN layer/low-doped Mg-AlN layer overlapped structure, generating a two-dimensional hole gas due to polarization effect generated by lattice mismatch of the two-dimensional hole gas InGaN layer and the low-doped Mg-AlN layer, and promoting hole injection into the multi-quantum well layer, and further generating a plurality of two-dimensional hole gas layers by depositing a plurality of overlapped structures to accelerate hole injection into the multi-quantum well layer; thirdly, depositing the high Mg-BInGaN layer generates enough holes and electrons to generate non-radiative recombination through high Mg-doped elements, doping In can reduce the activation energy of Mg, improve the concentration of activated Mg and the hole concentration, doping B/In can increase the width of a band gap, reduce electron overflow and finally improve the luminous efficiency of the light-emitting diode.
Drawings
The foregoing and/or additional aspects and advantages of the invention will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:
fig. 1 is a schematic structural diagram of an led epitaxial wafer according to an embodiment of the present invention.
Fig. 2 is a flowchart of a preparation process of an led epitaxial wafer according to an embodiment of the present invention.
Description of the drawings:
the semiconductor device comprises a substrate 100, a buffer layer 200, an undoped GaN layer 300, an N-type GaN layer 400, a multiple quantum well layer 500, a P-type semiconductor layer 600, a leakage shielding SiN layer 610, a two-dimensional hole gas InGaN layer 620, a low-doped Mg-AlN layer 630 and a high-doped Mg-BInGaN layer 640.
Detailed Description
In order to make the objects, features and advantages of the present invention more comprehensible, embodiments accompanied with figures are described in detail below. Several embodiments of the invention are presented in the figures. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "mounted" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
A first aspect of the present invention provides a light emitting diode epitaxial wafer, including a substrate, the light emitting diode epitaxial wafer further including:
the buffer layer, the undoped GaN layer, the N-type GaN layer, the multiple quantum well layer and the P-type semiconductor layer are sequentially laminated on the substrate;
the P-type semiconductor layer comprises a leakage shielding SiN layer, a periodic overlapping structure layer and a high-doped Mg-BInGaN layer which are sequentially laminated on the multiple quantum well layer, wherein the periodic overlapping structure layer comprises a two-dimensional hole gas InGaN layer and a low-doped Mg-AlN layer which are periodically overlapped.
Further, the thickness of the leakage shielding SiN layer is 1nm-10nm, the thickness of the two-dimensional hole gas InGaN layer is 0.5nm-5nm, the thickness of the low-doped Mg-AlN layer is 5nm-50nm, and the thickness of the high-doped Mg-BInGaN layer is 10nm-100nm.
Further, the In component In the two-dimensional hole gas InGaN layer is 0.01-0.2, the B component In the high-doped Mg-BInGaN layer is 0.01-0.5, and the In component is 0.01-0.1.
Further, the doping concentration of Mg element in the low-doped Mg-AlN layer is 1x10 17 atoms/cm 3 -1x10 19 atoms/cm 3 The doping concentration of Mg element in the high-doped Mg-BInGaN layer is 1x10 19 atoms/cm 3 -1x10 21 atoms/cm 3 。
Further, the alternating lamination period of the two-dimensional hole gas InGaN layer and the low-doped Mg-AlN layer is 1-10.
The second aspect of the present invention provides a method for preparing a light emitting diode epitaxial wafer, where the method is used to prepare the light emitting diode epitaxial wafer in the above technical solution, and the method includes:
providing a substrate;
sequentially depositing a buffer layer, an undoped GaN layer, an N-type GaN layer and a multiple quantum well layer on the substrate;
growing a P-type semiconductor layer on the multi-quantum well layer under a preset growth condition;
the P-type semiconductor layer comprises a leakage shielding SiN layer, a periodic overlapping structure layer and a high-doped Mg-BInGaN layer, wherein the periodic overlapping structure layer comprises a two-dimensional hole gas InGaN layer and a low-doped Mg-AlN layer which are overlapped periodically.
Further, the growth atmosphere of the P-type semiconductor layer comprises N 2 、H 2 With NH 3 ，N 2 、H 2 With NH 3 The ratio of (2) is 1:1:1-1:10:10.
Further, the growth temperature of the P-type semiconductor layer is 800-1000 ℃.
Further, the growth pressure of the P-type semiconductor layer is 50-300 torr.
The third aspect of the present invention provides an LED chip, where the LED chip includes the LED epitaxial wafer according to the above technical solution.
Compared with the prior art, the LED epitaxial wafer, the preparation method and the LED chip have the beneficial effects that:
firstly, because the GaN-based light emitting diode is heteroepitaxy, a great number of defects are generated in the GaN epitaxial layer, part of defects even pass through the multi-quantum well layer to the P-type semiconductor layer, in addition, the crystal quality is damaged due to the fact that the Mg doping concentration of the P-type semiconductor layer is too high, so that the electric leakage of the GaN-based light emitting diode is caused, and the deposited electric leakage shielding SiN layer can effectively reduce the extension of the epitaxial defects to the P-type semiconductor layer, reduce the electric leakage channel of the light emitting diode and improve the photoelectric performance; secondly, depositing a two-dimensional hole gas InGaN layer/low-doped Mg-AlN layer overlapped structure, generating a two-dimensional hole gas due to polarization effect generated by lattice mismatch of the two-dimensional hole gas InGaN layer and the low-doped Mg-AlN layer, and promoting hole injection into the multi-quantum well layer, and further generating a plurality of two-dimensional hole gas layers by depositing a plurality of overlapped structures to accelerate hole injection into the multi-quantum well layer; thirdly, depositing the high Mg-BInGaN layer generates enough holes and electrons to generate non-radiative recombination through high Mg-doped elements, doping In can reduce the activation energy of Mg, improve the concentration of activated Mg and the hole concentration, doping B/In can increase the width of a band gap, reduce electron overflow and finally improve the luminous efficiency of the light-emitting diode.
Example 1
Referring to fig. 1, a first embodiment of the present invention provides a light emitting diode epitaxial wafer, which is a nitride light emitting diode epitaxial wafer, and the light emitting diode epitaxial wafer includes:
a substrate 100;
and a buffer layer 200, an undoped GaN layer 300, an N-type GaN layer 400, a multiple quantum well layer 500, and a P-type semiconductor layer 600 sequentially stacked on the substrate;
the P-type semiconductor layer 600 includes a leakage shielding SiN layer 610, a periodically overlapping structure layer and a high Mg-BInGaN layer 640, which are sequentially stacked on the multiple quantum well layer, wherein the periodically overlapping structure layer includes a periodically overlapping two-dimensional hole gas InGaN layer 620 and the low Mg-AlN layer 630.
In this embodiment, the thickness of the leakage shielding SiN layer 610 is 5nm, the thickness of the two-dimensional hole gas InGaN layer 620 is 3nm, the thickness of the low Mg-AlN doped layer 630 is 10nm, and the thickness of the high Mg-BInGaN doped layer 640 is 35nm.
Further, the In component In the two-dimensional hole gas InGaN layer 620 is 0.1, the B component In the Mg-BInGaN layer 640 is 0.1, and the In component is 0.05.
Further, the doping concentration of Mg element in the low Mg-AlN doped layer 630 is 1×10 18 atoms/cm 3 The doping concentration of Mg element in the high Mg-BInGaN layer 640 is 1x10 20 atoms/cm 3 。
Further, the period of alternate lamination of the two-dimensional hole gas InGaN layer 620 and the low Mg-AlN layer 630 is 3.
Referring to fig. 2, in this embodiment, a method for preparing the light emitting diode epitaxial wafer includes:
in step S11, a substrate is provided.
Specifically, the substrate is a sapphire substrate, which is the most commonly used GaN-based LED substrate material at present, and the sapphire substrate has the advantages of mature preparation process, low price, easy cleaning and processing and good stability at high temperature.
Of course, in some otherIn the embodiment of the row, the substrate can also be SiO 2 A substrate, a silicon carbide substrate, a gallium nitride substrate and a zinc oxide substrate.
Step S12, a buffer layer is deposited on the substrate, and the substrate deposited with the buffer layer is preprocessed.
Specifically, an AlN buffer layer is deposited in the PVD application material, the thickness of the AlN buffer layer is 15nm, the AlN buffer layer provides a nucleation center which is the same as the substrate orientation, stress generated by lattice mismatch between GaN and the substrate and thermal stress generated by thermal expansion coefficient mismatch are released, a flat nucleation surface is provided for further epitaxial growth, and the contact angle of the nucleation growth is reduced to enable island-shaped GaN crystal grains to be connected into a plane in a smaller thickness, so that the island-shaped GaN crystal grains are converted into two-dimensional epitaxial growth.
Wherein pre-treating the substrate with the buffer layer deposited thereon comprises:
transferring the sapphire substrate plated with the AlN buffer layer into an MOCVD reaction cavity, and at H 2 The atmosphere is pretreated for 1-10min, the treatment temperature is 1000-1200 ℃, and then the sapphire substrate is nitrided, so that the crystal quality of the AlN buffer layer is improved, and the crystal quality of the subsequent deposited GaN epitaxial layer can be effectively improved.
Step S13, depositing an undoped GaN layer on the buffer layer.
Specifically, the growth temperature of the undoped GaN layer is 1100 ℃, the growth pressure is 150torr, the growth thickness of the undoped GaN layer is 2-3 mu m, the growth temperature of the undoped GaN layer is higher, the pressure is lower, the prepared GaN crystal has better quality, meanwhile, the thickness is increased along with the increase of the GaN thickness, the compressive stress can be released through stacking faults, the line defects are reduced, the crystal quality is improved, the reverse leakage is reduced, the consumption of Ga source materials by improving the GaN layer thickness is larger, and the epitaxial cost of an LED is greatly improved, so that the undoped GaN layer in the outer sheet of the light-emitting diode at present is usually grown by 2-3 mu m, the production cost is saved, and the GaN material has higher crystal quality.
In other possible embodiments, the undoped GaN layer is grown at a temperature of 1050-1200 deg.C, a pressure of 100-600torr, and a thickness of 1-5 μm.
And S14, depositing an N-type GaN layer on the undoped GaN layer.
Specifically, the growth temperature of the N-type GaN layer is 1120 ℃, the growth pressure is 100torr, the growth thickness is 2-3 mu m, and the doping concentration of Si in the N-type GaN layer is 2.5x10 19 atoms/cm 3 Firstly, the N-type GaN layer provides sufficient electrons for the light emission of the LED epitaxial wafer, secondly, the resistivity of the N-type GaN layer is higher than that of the transparent electrode on the P-type GaN layer, so that the enough Si doping is arranged, the resistivity of the N-type GaN layer can be effectively reduced, and finally, the enough thickness of the N-type GaN layer is arranged, so that the light emitting efficiency of the stress light emitting diode can be effectively released.
In other possible embodiments, the growth temperature of the N-type GaN layer is 1050-1200deg.C, the growth pressure is 100-600torr, the growth thickness is 2-3 μm, and the Si doping concentration is 1x10 19 -5x10 19 atoms/cm 3 。
And S15, depositing a multi-quantum well layer on the N-type GaN layer.
Specifically, the multiple quantum well layer is an InGaN quantum well layer and an AlGaN quantum barrier layer which are alternately stacked, the stacking period number is 10, wherein the growth temperature of the InGaN quantum well layer is 795 ℃, the thickness is 3.5nm, the growth pressure is 200torr, the in component is 0.22, the growth temperature of the AlGaN quantum barrier layer is 855 ℃, the growth thickness is 9.8nm, the growth pressure is 200torr, the Al component is 0.05, and the multiple quantum well layer is an electron and hole recombination region, and the overlapping degree of electron and hole wave functions can be remarkably increased by reasonable structural design, so that the luminous efficiency of the LED device is improved.
In other possible embodiments, the multi-quantum well layer is an InGaN quantum well layer and an AlGaN quantum barrier layer which are alternately stacked, wherein the stacking period is 1-15, the growth temperature of the InGaN quantum well layer is 790-810 ℃, the growth thickness is 2-5nm, the growth pressure is 50-300torr, and the in composition is 0.01-0.5; the AlGaN quantum barrier layer has a growth temperature of 800-900 ℃, a growth thickness of 5-15nm, a growth pressure of 50-300torr and an Al component of 0.01-0.1.
And S16, depositing a P-type semiconductor layer on the multiple quantum well layer.
In this embodiment, the P-type semiconductor layer includes a leakage shielding SiN layer, a periodic stacked structure layer, and a high Mg-BInGaN layer, and the periodic stacked structure layer includes a two-dimensional hole gas InGaN layer and a low Mg-AlN layer that are periodically stacked.
Specifically, the P-type semiconductor layer comprises a leakage shielding SiN layer, a periodical overlapping structure layer and a high-doped Mg-BInGaN layer, wherein the periodical overlapping structure layer comprises a periodically overlapped two-dimensional hole gas InGaN layer and a low-doped Mg-AlN layer.
The thickness of the leakage shielding SiN layer is 5nm, the thickness of the two-dimensional hole gas InGaN layer is 3nm, the thickness of the low-doped Mg-AlN layer is 10nm, and the thickness of the high-doped Mg-BInGaN layer is 35nm.
Further, the In component In the two-dimensional hole gas InGaN layer is 0.1, the B component In the high Mg-BInGaN layer is 0.1, and the In component In the high Mg-BInGaN layer is 0.05; the doping concentration of Mg element in the two-dimensional hole gas InGaN layer and the low-doped Mg-AlN layer is 1x10 18 atoms/cm 3 The doping concentration of Mg element in the high-doped Mg-BInGaN layer is 1x10 20 atoms/cm 3 。
Further, the period of the overlapping structure of the two-dimensional hole gas InGaN layer and the low-doped Mg-AlN layer is 3.
Further, the growth atmosphere of the P-type semiconductor layer comprises introducing N 2 /H 2 /NH 3 ，N 2 /H 2 /NH 3 The ratio of (2) is 1:6:3, and the growth temperature of the P-type semiconductor layer is 950 ℃ and the growth pressure of the P-type semiconductor layer is 150torr in the process of depositing the P-type semiconductor layer.
The GaN-based light-emitting diode has the beneficial effects that firstly, the GaN-based light-emitting diode generates a large number of defects on the GaN epitaxial layer because of heteroepitaxy, part of defects even pass through the multiple quantum well layers to the P-type semiconductor layer, in addition, the crystal quality is destroyed due to the fact that the Mg doping concentration of the P-type semiconductor layer is too high, so that the electric leakage of the GaN-based light-emitting diode is caused, the electric leakage shielding SiN layer is deposited, the extension of the epitaxial defects to the P-type semiconductor layer can be effectively reduced, the electric leakage channel of the light-emitting diode is reduced, and the photoelectric performance is improved; secondly, depositing a two-dimensional hole gas InGaN layer/low-doped Mg-AlN layer overlapped structure, generating a two-dimensional hole gas due to polarization effect generated by lattice mismatch of the two-dimensional hole gas InGaN layer and the low-doped Mg-AlN layer, and promoting hole injection into the multi-quantum well layer, and further generating a plurality of two-dimensional hole gas layers by depositing a plurality of overlapped structures to accelerate hole injection into the multi-quantum well layer; thirdly, depositing the high Mg-BInGaN layer generates enough holes and electrons to generate non-radiative recombination through high Mg-doped elements, doping In can reduce the activation energy of Mg, improve the concentration of activated Mg and the hole concentration, doping B/In can increase the width of a band gap, reduce electron overflow and finally improve the luminous efficiency of the light-emitting diode.
In this embodiment, an LED chip is further provided, where the LED chip is a light emitting diode epitaxial wafer shown in this embodiment, and a chip electrode is fabricated on the epitaxial wafer, so as to obtain the LED chip.
The sample A and the sample B are prepared into the chip with the size of 10 mils 24 mils by using the same chip process conditions, wherein the sample A is the chip prepared by the current mass production, the sample B is the chip prepared by the embodiment, 300 samples are respectively extracted for detection, and the photoelectric efficiency is improved by 5% when tested under 120mA/60mA current, and other items have good electrical properties.
Example two
The second embodiment of the present invention also provides a light emitting diode epitaxial wafer, in which the same preparation method as that of the first embodiment is used to prepare the epitaxial wafer, and the epitaxial wafer in the embodiment is basically identical to the epitaxial wafer in the first embodiment in structure, and the difference is that:
in this embodiment, the thickness of the leakage shielding SiN layer is 7nm, the thickness of the two-dimensional hole gas InGaN layer is 4nm, the thickness of the low-doped Mg-AlN layer is 12nm, and the thickness of the high-doped Mg-BInGaN layer is 40nm.
The LED epitaxial wafer shown in the embodiment is adopted for chip manufacturing, and the sample A and the sample B are prepared into a chip with the size of 10 mils 24 mils by using the same chip process conditions, wherein the sample A is the chip prepared by mass production at present, the sample B is the chip prepared by the embodiment, 300 samples are respectively extracted for detection, and the photoelectric efficiency is improved by 3.5% when tested under 120mA/60mA current, and other items have good electrical properties.
Example III
The third embodiment of the present invention also provides a light emitting diode epitaxial wafer, in which the same manufacturing method as that of the first embodiment is used to manufacture the epitaxial wafer, and the epitaxial wafer in the present embodiment is substantially identical to the epitaxial wafer in the first embodiment in structure, and the difference is that:
in this embodiment, the thickness of the leakage shielding SiN layer is 3nm, the thickness of the two-dimensional hole gas InGaN layer is 2nm, the thickness of the low-doped Mg-AlN layer is 8nm, and the thickness of the high-doped Mg-BInGaN layer is 30nm.
The light-emitting diode epitaxial wafer shown in the embodiment is adopted for chip manufacturing, and the sample A and the sample B are prepared into a chip with the size of 10 mils 24 mils by using the same chip process conditions, wherein the sample A is the chip prepared by mass production at present, the sample B is the chip prepared by the embodiment, 300 samples are respectively extracted for detection, and the photoelectric efficiency is improved by 2.8% when tested under 120mA/60mA current, and other items of electrical performance are good.
Example IV
The fourth embodiment of the present invention also provides a light emitting diode epitaxial wafer, in which the same manufacturing method as that of the first embodiment is used to manufacture the epitaxial wafer, and the epitaxial wafer in the present embodiment is substantially identical to the epitaxial wafer in the first embodiment in structure, except that:
in this embodiment, the In composition In the two-dimensional hole gas InGaN layer is 0.15, the B composition In the high Mg-BInGaN layer is 0.2, and the In composition In the high Mg-BInGaN layer is 0.07.
The light-emitting diode epitaxial wafer shown in the embodiment is adopted for chip manufacturing, and the sample A and the sample B are prepared into a chip with the size of 10 mils 24 mils by using the same chip process conditions, wherein the sample A is the chip prepared by mass production at present, the sample B is the chip prepared by the embodiment, 300 samples are respectively extracted for detection, and the photoelectric efficiency is improved by 3.2% when tested under 120mA/60mA current, and other items have good electrical properties.
Example five
The fifth embodiment of the present invention also provides a light emitting diode epitaxial wafer, in which the same manufacturing method as that of the first embodiment is used to manufacture the epitaxial wafer, and the epitaxial wafer in the present embodiment is substantially identical to the epitaxial wafer in the first embodiment in structure, except that:
in this embodiment, the In composition In the two-dimensional hole gas InGaN layer is 0.05, the B composition In the high Mg-BInGaN layer is 0.07, and the In composition In the high Mg-BInGaN layer is 0.03.
The light-emitting diode epitaxial wafer shown in the embodiment is adopted for chip manufacturing, and the sample A and the sample B are prepared into a chip with the size of 10 mils 24 mils by using the same chip process conditions, wherein the sample A is the chip prepared by mass production at present, the sample B is the chip prepared by the embodiment, 300 samples are respectively extracted for detection, and the photoelectric efficiency is improved by 2.0% when tested under 120mA/60mA current, and other items have good electrical properties.
Example six
The sixth embodiment of the present invention also provides a light emitting diode epitaxial wafer, in which the same manufacturing method as that of the first embodiment is used to manufacture the epitaxial wafer, and the epitaxial wafer in the present embodiment is substantially identical to the epitaxial wafer in the first embodiment in structure, except that:
in the embodiment, the doping concentration of Mg element in the two-dimensional hole gas InGaN layer and the low-doped Mg-AlN layer is 5x10 18 atoms/cm 3 The doping concentration of Mg element in the high-doped Mg-BInGaN layer is 6x10 20 atoms/cm 3 。
The LED epitaxial wafer shown in the embodiment is adopted for chip manufacturing, and the sample A and the sample B are prepared into a chip with the size of 10 mils 24 mils by using the same chip process conditions, wherein the sample A is the chip prepared by mass production at present, the sample B is the chip prepared by the embodiment, 300 samples are respectively extracted for detection, and the photoelectric efficiency is improved by 3.5% when tested under 120mA/60mA current, and other items have good electrical properties.
Example seven
The seventh embodiment of the present invention also provides a light emitting diode epitaxial wafer, in which the same manufacturing method as that of the first embodiment is used to manufacture the epitaxial wafer, and the epitaxial wafer in the present embodiment is substantially identical to the epitaxial wafer in the first embodiment in structure, except that:
in the embodiment, the doping concentration of Mg element in the two-dimensional hole gas InGaN layer and the low-doped Mg-AlN layer is 5x10 17 atoms/cm 3 The doping concentration of Mg element in the high-doped Mg-BInGaN layer is 6x10 19 atoms/cm 3 。
The LED epitaxial wafer shown in the embodiment is adopted for chip manufacturing, and the sample A and the sample B are prepared into a chip with the size of 10 mils 24 mils by using the same chip process conditions, wherein the sample A is the chip prepared by mass production at present, the sample B is the chip prepared by the embodiment, 300 samples are respectively extracted for detection, and the photoelectric efficiency is improved by 1.8% when tested under 120mA/60mA current, and other items have good electrical properties.
Example eight
The eighth embodiment of the present invention also provides a light emitting diode epitaxial wafer, in which the same manufacturing method as that of the first embodiment is used to manufacture the epitaxial wafer, and the epitaxial wafer in the present embodiment is substantially identical to the epitaxial wafer in the first embodiment in structure, except that:
in this embodiment, the period of the overlapping structure of the two-dimensional hole gas InGaN layer and the low-doped Mg-AlN layer is 5.
The LED epitaxial wafer shown in the embodiment is adopted for chip manufacturing, and the sample A and the sample B are prepared into a chip with the size of 10 mils 24 mils by using the same chip process conditions, wherein the sample A is the chip prepared by mass production at present, the sample B is the chip prepared by the embodiment, 300 samples are respectively extracted for detection, and the photoelectric efficiency is improved by 2.5% when tested under 120mA/60mA current, and other items have good electrical properties.
Example nine
The ninth embodiment of the present invention also provides a light emitting diode epitaxial wafer, in which the same manufacturing method as that of the first embodiment is used to manufacture the epitaxial wafer, and the epitaxial wafer in the present embodiment is substantially identical to the epitaxial wafer in the first embodiment in structure, except that:
in this embodiment, the period of the overlapping structure of the two-dimensional hole gas InGaN layer and the low-doped Mg-AlN layer is 1.
The LED epitaxial wafer shown in the embodiment is adopted for chip manufacturing, and the sample A and the sample B are prepared into a chip with the size of 10 mils 24 mils by using the same chip process conditions, wherein the sample A is the chip prepared by mass production at present, the sample B is the chip prepared by the embodiment, 300 samples are respectively extracted for detection, and the photoelectric efficiency is improved by 1% and other electrical properties are good under the test of 120mA/60mA current.
Comparative example one
The comparative example of the present invention, in which a Mg doped GaN layer having a thickness of 45nm was used for the P-type semiconductor layer, also provides a light emitting diode epitaxial wafer.
Referring to table 1, table 1 is a comparative table of parameters of examples one to nine and comparative example one of the present invention.
TABLE 1
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing examples illustrate only a few embodiments of the invention, and are described in detail, but are not to be construed as limiting the scope of the invention. It should be noted that it is possible for those skilled in the art to make several variations and modifications without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (10)
1. The light-emitting diode epitaxial wafer comprises a substrate and is characterized in that the light-emitting diode epitaxial wafer further comprises:
the buffer layer, the undoped GaN layer, the N-type GaN layer, the multiple quantum well layer and the P-type semiconductor layer are sequentially laminated on the substrate;
the P-type semiconductor layer comprises a leakage shielding SiN layer, a periodic overlapping structure layer and a high-doped Mg-BInGaN layer which are sequentially laminated on the multiple quantum well layer, wherein the periodic overlapping structure layer comprises a two-dimensional hole gas InGaN layer and a low-doped Mg-AlN layer which are periodically overlapped.
2. The light emitting diode epitaxial wafer of claim 1, wherein the leakage shielding SiN layer has a thickness of 1nm-10nm, the two-dimensional hole gas InGaN layer has a thickness of 0.5nm-5nm, the low Mg-AlN layer has a thickness of 5nm-50nm, and the high Mg-BInGaN layer has a thickness of 10nm-100nm.
3. The light-emitting diode epitaxial wafer of claim 1, wherein the In composition In the two-dimensional hole gas InGaN layer is 0.01-0.2, the B composition In the Mg-BInGaN layer is 0.01-0.5, and the In composition is 0.01-0.1.
4. The light-emitting diode epitaxial wafer of claim 1, wherein the doping concentration of Mg element in the low-doped Mg-AlN layer is 1x10 17 atoms/cm 3 -1x10 19 atoms/cm 3 In the high Mg-BInGaN-doped layerThe doping concentration of Mg element is 1x10 19 atoms/cm 3 -1x10 21 atoms/cm 3 。
5. The light-emitting diode epitaxial wafer of claim 1, wherein the alternating stacking period of the two-dimensional hole gas InGaN layer and the low Mg-AlN layer is 1-10.
6. A method for preparing a light emitting diode epitaxial wafer, wherein the method is used for preparing the light emitting diode epitaxial wafer according to any one of claims 1 to 5, and the method comprises the following steps:
providing a substrate;
sequentially depositing a buffer layer, an undoped GaN layer, an N-type GaN layer and a multiple quantum well layer on the substrate;
growing a P-type semiconductor layer on the multi-quantum well layer under a preset growth condition;
the P-type semiconductor layer comprises a leakage shielding SiN layer, a periodic overlapping structure layer and a high-doped Mg-BInGaN layer, wherein the periodic overlapping structure layer comprises a two-dimensional hole gas InGaN layer and a low-doped Mg-AlN layer which are overlapped periodically.
7. The method of manufacturing a light-emitting diode epitaxial wafer according to claim 6, wherein the growth atmosphere of the P-type semiconductor layer comprises N 2 、H 2 With NH 3 ，N 2 、H 2 With NH 3 The ratio of (2) is 1:1:1-1:10:10.
8. The method for manufacturing a light-emitting diode epitaxial wafer according to claim 6, wherein the growth temperature of the P-type semiconductor layer is 800 ℃ to 1000 ℃.
9. The method of claim 6, wherein the P-type semiconductor layer is grown at a pressure of 50-300 torr.
10. An LED chip, characterized in that the LED chip comprises the light emitting diode epitaxial wafer according to any one of claims 1 to 5.
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