CN116936691A - Manufacturing method of micro light emitting diode display module, display and information processing device - Google Patents

Manufacturing method of micro light emitting diode display module, display and information processing device Download PDF

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Publication number
CN116936691A
CN116936691A CN202210347388.7A CN202210347388A CN116936691A CN 116936691 A CN116936691 A CN 116936691A CN 202210347388 A CN202210347388 A CN 202210347388A CN 116936691 A CN116936691 A CN 116936691A
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CN
China
Prior art keywords
light emitting
emitting diode
block
micro
display
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Pending
Application number
CN202210347388.7A
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Chinese (zh)
Inventor
田建国
吴智孟
林俊忠
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Innovation Service Co ltd
Jingtian Technology Co ltd
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Innovation Service Co ltd
Jingtian Technology Co ltd
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Priority to CN202210347388.7A priority Critical patent/CN116936691A/en
Publication of CN116936691A publication Critical patent/CN116936691A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The invention discloses a manufacturing method of a micro light emitting diode display module, which comprises the following steps: cutting a block from a micro light emitting diode wafer by a shape of a display screen, wherein the block is provided with a plurality of micro light emitting diode dies and an electrode side and a light emitting side; disposing a plurality of driving chips on the electrode side of the block to form a display unit; and disposing the display unit on a circuit substrate to form a display module; wherein, each driving chip is provided with a plurality of through silicon vias to provide a plurality of electrical connection paths between each driving chip and the circuit substrate.

Description

Manufacturing method of micro light emitting diode display module, display and information processing device
Technical Field
The present invention relates to a display device, and more particularly, to a micro light emitting diode display device.
Background
The Micro light emitting diode (Micro LED) display process mainly comprises an epitaxy process and a huge transfer process, namely, millions of Micro LEDs in the Micro level must be transferred to a display substrate after the epitaxy process of the Micro LEDs is completed, and if the transfer process cannot be completed in a reasonable time effectively, the Micro LED display cannot be produced in a large quantity.
The technologies mainly adopted in the mass transfer technology at present are a Stamp technology and a laser transfer technology, wherein the Stamp technology is to grasp a large amount of Micro LED chips by using the adsorption forces such as static electricity, van der Waals force, magnetic force and the like, and then transfer the Micro LED chips to a display substrate; the laser transfer technology realizes the selective transfer of the elements of the Micro LED by means of laser irradiation and an optical mask.
However, the bulk transfer process is prone to alignment and device damage issues, which prevent improvement in yield.
To solve the above-mentioned problems, a novel method for manufacturing a micro light emitting diode display is needed in the art.
Disclosure of Invention
The invention discloses a manufacturing method of a micro light emitting diode display module, which can rapidly complete the assembly of the micro light emitting diode display module by cutting a block corresponding to the shape of a display screen in a micro light emitting diode wafer and directly adhering a plurality of driving chips on the block.
Another objective of the present invention is to disclose a method for manufacturing a micro light emitting diode display module, which can minimize the damage of micro light emitting diode dies without performing high precision and complicated processes such as single dicing, arrangement, transferring, etc. on the micro light emitting diode wafer, thereby effectively improving the yield of a micro light emitting diode display module.
To achieve the above object, a method for manufacturing a micro light emitting diode display module is provided, which comprises:
cutting a block from a micro light emitting diode wafer by a shape of a display screen, wherein the block is provided with a plurality of micro light emitting diode dies and an electrode side and a light emitting side;
disposing a plurality of driving chips on the electrode side of the block to form a display unit; and
disposing the display unit on a circuit substrate to form a display module;
wherein, each driving chip is provided with a plurality of through silicon vias to provide a plurality of electrical connection paths between each driving chip and the circuit substrate.
In one embodiment, the electrical connection paths are used for the circuit substrate to transmit a power and at least one control signal to each driving chip.
In one embodiment, the micro-led wafer is formed by performing an epitaxial process on a wafer substrate.
In an embodiment, the manufacturing method of the micro light emitting diode display module further includes disposing a color conversion layer on the light emitting side of the block.
In one embodiment, the electrode side of the block is configured with at least one common positive metal pad and at least one common negative metal pad, wherein the common positive metal pad is electrically connected with anodes of the micro light emitting diode dies, and the common negative metal pad is electrically connected with cathodes of the micro light emitting diode dies.
In order to achieve the above object, the present invention further provides a display having a display screen and a micro light emitting diode display module, the manufacturing method of the micro light emitting diode display module includes:
cutting a block from a micro light emitting diode wafer by the shape of the display screen, wherein the block is provided with a plurality of micro light emitting diode grains and an electrode side and a light emitting side;
disposing a plurality of driving chips on the electrode side of the block to form a display unit; and
disposing the display unit on a circuit substrate;
each driving chip is provided with a plurality of through silicon vias to electrically connect the electrode side and the circuit substrate.
In one embodiment, the micro-led wafer is formed by performing an epitaxial process on a wafer substrate.
In one embodiment, the manufacturing method further comprises providing a color conversion layer on the light emitting side of the block.
In one embodiment, the electrode side of the block is configured with at least one common positive metal pad and at least one common negative metal pad, wherein the common positive metal pad is electrically connected with anodes of the micro light emitting diode dies, and the common negative metal pad is electrically connected with cathodes of the micro light emitting diode dies.
In order to achieve the above object, the present invention further provides an information processing apparatus having a central processing unit and a display as described above.
In a possible embodiment, the information processing device may be a smart phone, a portable computer, a vehicle-mounted computer, a wearable electronic device or an advertisement board.
In order that the manner in which the above recited features, features and objects of the present invention are attained and can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to the appended drawings.
Drawings
FIG. 1 is a flow chart of a manufacturing method of a micro light emitting diode display module according to an embodiment of the invention.
FIG. 2 is a schematic diagram of a block configuration of at least one common positive metal pad and at least one common negative metal pad according to the manufacturing method of the micro light emitting diode display module of FIG. 1.
Fig. 3 is a schematic diagram of a bonding pad structure of a driving chip according to the manufacturing method of the micro light emitting diode display module of fig. 1.
Fig. 4 schematically shows a schematic view of an embodiment of the display of the invention.
Fig. 5 schematically shows a block diagram of an embodiment of the information processing apparatus of the present invention.
Detailed Description
The principle of the invention is as follows: instead of using the conventional mass transfer process to avoid damaging the micro-led die when dicing the micro-led die on a micro-led wafer, the present invention cuts a block corresponding to the shape of a display screen in a micro-led wafer, and directly bonds (mount) a plurality of driving chips on the block, thereby rapidly completing the assembly of a micro-led display module. That is, the manufacturing method of the micro light emitting diode display module of the present invention can minimize the damage of the micro light emitting diode die and effectively improve the yield, since the high precision and complicated processes such as single dicing, arrangement, transfer, etc. are not required for the micro light emitting diode wafer.
Referring to fig. 1, a flowchart of a method for manufacturing a micro light emitting diode display module according to an embodiment of the invention is shown. As shown in fig. 1, it includes: cutting a block from a micro light emitting diode wafer by a shape of a display screen, wherein the block has a plurality of micro light emitting diode dies and has an electrode side and a light emitting side (step a); disposing a plurality of driving chips on the electrode side of the block to form a display unit (step b); and disposing the display unit on a circuit substrate to form a display module (step c).
In step a, the micro light emitting diode wafer is formed by performing an epitaxial process on a wafer substrate (e.g., a sapphire substrate), and the electrode side is provided with an anode and a cathode of each micro light emitting diode die. In addition, in a possible embodiment, the electrode side of the block may be configured with at least one common positive metal pad and at least one common negative metal pad, the common positive metal pad being electrically connected with anodes of the plurality of micro light emitting diode dies, and the common negative metal pad being electrically connected with cathodes of the plurality of micro light emitting diode dies. Referring to fig. 2, the block is configured with at least one common positive metal pad and at least one common negative metal pad. As shown in fig. 2, a block 10 is configured with a plurality of common-positive metal pads 11 and a plurality of common-negative metal pads 12 for bonding driving circuits of a plurality of driving chips.
In step b, each of the driving chips has a plurality of through silicon vias (TSVs; through silicon via) for providing a plurality of electrical connection paths between each of the driving chips and the circuit substrate for electrically connecting a power source and at least one control signal from a display controller soldered on the circuit substrate for controlling each of the driving chips. Fig. 3 is a schematic diagram of a pad structure of the driving chip. As shown in fig. 3, each driving chip 20 adhered to a block 10 has a plurality of through-silicon vias 21 and a plurality of flip-chip bonding pads 22, wherein the through-silicon vias 21 are used for providing electrical connection paths between the driving chip 20 and a circuit substrate (not shown), and the flip-chip bonding pads 22 are used for electrically connecting the driving chip 20 and anodes and cathodes of a plurality of micro-led dies in the block 10. In the assembled micro light emitting diode display module, the structure is respectively a block 10, a driving chip 20 and the circuit substrate from top to bottom. In addition, the substrate of the circuit substrate can be Polyimide (Polyimide) or glass.
For example, assuming that the pixel resolution of the block 10 is 180×180 and the pixel resolution of the driving chip 20 is 30×30, only 36 driving chips 20 are required to be adhered to the block 10, and then the other sides of the 36 driving chips 20 are adhered to the circuit substrate to complete the assembly of a display module. In addition, the driving wafer 20 may be an AM (active mode) driving wafer or a PM (passive mode) driving wafer.
In addition, in a possible embodiment, the manufacturing method of the micro light emitting diode display module may further include providing a color conversion layer on the light emitting side of the block 10, so that the micro light emitting diode display module provides a color picture. In detail, the color conversion layer may be a quantum dot color filter (quantum dot color filter) to convert the light emitted from the micro led dies into three colors of red, green and blue (R, G, B) light to provide a color picture.
Through the above description, the present invention further proposes a display. Fig. 4 is a schematic diagram of a display according to an embodiment of the invention. As shown in fig. 4, a display 100 has a display screen 110 and a micro-led display module 111, wherein the micro-led display module 111 is a display module manufactured by the manufacturing method of the micro-led display module.
The present invention further proposes an information processing apparatus by the above description. Referring to fig. 5, a block diagram of an embodiment of an information processing apparatus of the present invention is schematically shown. As shown in fig. 5, an information processing apparatus 200 has a central processing unit 210 and a display 220, wherein the display 220 is implemented by the display 100 shown in fig. 4, and the central processing unit 210 is used for communicating with the display 220. In addition, the information processing device 200 may be a smart phone, a portable computer, a vehicle-mounted computer, a wearable electronic device or an advertisement board.
Through the design disclosed in the foregoing, the invention has the following advantages:
1. the manufacturing method of the micro light emitting diode display module can rapidly complete the assembly of the micro light emitting diode display module by cutting a block corresponding to the shape of a display screen in a micro light emitting diode wafer and directly adhering a plurality of driving chips on the block.
2. The manufacturing method of the micro light emitting diode display module can minimize the damage of micro light emitting diode crystal grains without carrying out high-precision and complicated procedures such as single cutting, arrangement, transfer and the like on the micro light emitting diode wafer, thereby effectively improving the yield of the micro light emitting diode display module.
The foregoing description of the embodiments has been provided for the purpose of illustrating the general principles of the invention, and is not meant to limit the invention thereto, but to limit the invention thereto, and any modifications, equivalents, improvements and equivalents thereof may be made without departing from the spirit and principles of the invention.

Claims (11)

1. A manufacturing method of micro light emitting diode display module includes:
cutting a block from a micro light emitting diode wafer by a shape of a display screen, wherein the block is provided with a plurality of micro light emitting diode dies and an electrode side and a light emitting side;
disposing a plurality of driving chips on the electrode side of the block to form a display unit; and
disposing the display unit on a circuit substrate to form a display module;
wherein, each driving chip is provided with a plurality of through silicon vias to provide a plurality of electrical connection paths between each driving chip and the circuit substrate.
2. The method of claim 1, wherein the electrical connection paths are used for the circuit substrate to transmit a power and at least one control signal to each driving chip.
3. The method of claim 1, wherein the micro-led wafer is formed by performing an epitaxial process on a wafer substrate.
4. The method of claim 2, further comprising disposing a color conversion layer on the light emitting side of the block.
5. The method of claim 1, wherein the electrode side of the block is provided with at least one common positive metal pad and at least one common negative metal pad, the common positive metal pad is electrically connected with anodes of the micro-led dies, and the common negative metal pad is electrically connected with cathodes of the micro-led dies.
6. A display has a display screen and a micro light emitting diode display module, the manufacturing method of the micro light emitting diode display module includes:
cutting a block from a micro light emitting diode wafer by the shape of the display screen, wherein the block is provided with a plurality of micro light emitting diode grains and an electrode side and a light emitting side;
disposing a plurality of driving chips on the electrode side of the block to form a display unit; and
disposing the display unit on a circuit substrate;
each driving chip is provided with a plurality of through silicon vias to electrically connect the electrode side and the circuit substrate.
7. The display of claim 5, wherein the micro-led wafer is formed by performing an epitaxial process on a wafer substrate.
8. The display of claim 5, wherein the manufacturing method further comprises providing a color conversion layer on the light emitting side of the block.
9. The display of claim 5, wherein the electrode side of the block is configured with at least one common positive metal pad and at least one common negative metal pad, the common positive metal pad being electrically connected to anodes of the plurality of micro-led dies, the common negative metal pad being electrically connected to cathodes of the plurality of micro-led dies.
10. An information processing apparatus having a central processing unit and a display as claimed in any one of claims 5 to 8.
11. The information processing apparatus of claim 10, which is a device selected from the group consisting of a smart phone, a portable computer, a vehicle-mounted computer, a wearable electronic device, and an advertisement board.
CN202210347388.7A 2022-04-01 2022-04-01 Manufacturing method of micro light emitting diode display module, display and information processing device Pending CN116936691A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210347388.7A CN116936691A (en) 2022-04-01 2022-04-01 Manufacturing method of micro light emitting diode display module, display and information processing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210347388.7A CN116936691A (en) 2022-04-01 2022-04-01 Manufacturing method of micro light emitting diode display module, display and information processing device

Publications (1)

Publication Number Publication Date
CN116936691A true CN116936691A (en) 2023-10-24

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Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
CN (1) CN116936691A (en)

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