CN116936503A - 一种封装块状高导材料的热管理组件及其制作方法 - Google Patents
一种封装块状高导材料的热管理组件及其制作方法 Download PDFInfo
- Publication number
- CN116936503A CN116936503A CN202210365239.3A CN202210365239A CN116936503A CN 116936503 A CN116936503 A CN 116936503A CN 202210365239 A CN202210365239 A CN 202210365239A CN 116936503 A CN116936503 A CN 116936503A
- Authority
- CN
- China
- Prior art keywords
- bulk
- conductivity material
- thermal management
- thermal
- management assembly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 76
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 36
- 239000002184 metal Substances 0.000 claims abstract description 36
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 35
- 239000010439 graphite Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000011248 coating agent Substances 0.000 claims abstract description 18
- 238000000576 coating method Methods 0.000 claims abstract description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000005266 casting Methods 0.000 claims abstract description 10
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 9
- 239000010432 diamond Substances 0.000 claims abstract description 9
- 239000011229 interlayer Substances 0.000 claims abstract description 7
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 4
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 4
- 239000011133 lead Substances 0.000 claims abstract description 4
- 239000011135 tin Substances 0.000 claims abstract description 4
- 239000000853 adhesive Substances 0.000 claims abstract 4
- 230000001070 adhesive effect Effects 0.000 claims abstract 4
- 239000000919 ceramic Substances 0.000 claims abstract 4
- 238000005524 ceramic coating Methods 0.000 claims abstract 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 16
- 239000000843 powder Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 238000011049 filling Methods 0.000 claims description 11
- 238000009715 pressure infiltration Methods 0.000 claims description 10
- 239000006260 foam Substances 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 238000009713 electroplating Methods 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 6
- 239000004088 foaming agent Substances 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 4
- 230000009471 action Effects 0.000 claims description 4
- 238000005187 foaming Methods 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 claims description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 claims description 2
- 230000007613 environmental effect Effects 0.000 claims description 2
- 235000011007 phosphoric acid Nutrition 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000011780 sodium chloride Substances 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000007921 spray Substances 0.000 claims 6
- 239000006262 metallic foam Substances 0.000 claims 4
- 230000008878 coupling Effects 0.000 claims 3
- 238000010168 coupling process Methods 0.000 claims 3
- 238000005859 coupling reaction Methods 0.000 claims 3
- 238000007740 vapor deposition Methods 0.000 claims 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- 238000007772 electroless plating Methods 0.000 claims 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 claims 1
- 229910052582 BN Inorganic materials 0.000 claims 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 238000004026 adhesive bonding Methods 0.000 claims 1
- 229910052790 beryllium Inorganic materials 0.000 claims 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims 1
- 239000013590 bulk material Substances 0.000 claims 1
- -1 but not limited to Substances 0.000 claims 1
- 229910010293 ceramic material Inorganic materials 0.000 claims 1
- 239000011162 core material Substances 0.000 claims 1
- 238000002788 crimping Methods 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 150000003839 salts Chemical class 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 238000009751 slip forming Methods 0.000 claims 1
- 238000007569 slipcasting Methods 0.000 claims 1
- 238000005476 soldering Methods 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 238000003466 welding Methods 0.000 abstract description 11
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 abstract 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 13
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 238000001816 cooling Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 239000008367 deionised water Substances 0.000 description 7
- 229910021641 deionized water Inorganic materials 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000001035 drying Methods 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- 239000011268 mixed slurry Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000004907 flux Effects 0.000 description 3
- 238000004080 punching Methods 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/11—Making porous workpieces or articles
- B22F3/1121—Making porous workpieces or articles by using decomposable, meltable or sublimatable fillers
- B22F3/1125—Making porous workpieces or articles by using decomposable, meltable or sublimatable fillers involving a foaming process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/24—After-treatment of workpieces or articles
- B22F3/26—Impregnating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/002—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of porous nature
- B22F7/004—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of porous nature comprising at least one non-porous part
- B22F7/006—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of porous nature comprising at least one non-porous part the porous part being obtained by foaming
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/54—Electroplating of non-metallic surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
一种封装块状高导材料的热管理组件,该热管理组件可以实现热量的快速均匀,不仅体现为极高的导热率,而且兼具极低的界面热阻。该热管理组件由封装基板、带特殊涂层的夹层块状高导材料组成。封装基板可以为金属,可以为陶瓷。夹层块状高导材料包括但不限于块状石墨烯、块状热解石墨、块状石墨块、块状人造金刚石。高导材料块上的涂层可以为金属,可以为陶瓷。金属涂层材料包括但不限于银、银‑铜、锡、铅、镍及其组合。陶瓷涂层材料包括但不限于碳化硅、碳化钛。封装基板与带涂层的夹层块状高导材料可以通过机械连接、胶接、焊接与铸造等形式结合在一起,优先焊接与铸造。
Description
技术领域
本发明属于热管理领域,具体涉及一种实现热量快速均匀的封装碳系高导热材料的热管理组件。
背景技术
随着科技的快速发展,装备趋于小型化、高集成化和大功率化。TR组件、RF/微波电子、二极管激光器、发光二极管(LED)、绝缘栅双极型晶体管(IGBT)、中央处理单元(CPU)等的高功率部件被广泛应用,导致电子元器件功耗越来越大,系统内部热流密度越来越高。发热电子元器件或发热设备所产生的热量如若不能有效解决,将直接影响电子系统的可靠性和寿命,甚至可能引发灾难性的热失效。
针对此问题,研究人员开发了一系列的散热产品,包括热管,环路热管,蒸发腔均热板等。目前广泛使用的是VC均温板,这种均温版结构加工工序复杂,难度较大,对生产设备要求高。但VC均温板受限于其自身冷却形式影响,当系统的加速度≥30g,均温板冷却回流将存在巨大阻力,使得其传热效率降低或者直接失效,故VC均温板无法应用于大机动的机载、弹载设备。不仅如此,VC均温板在温度冲击和振动过程前后,其热性能衰减明显。因此,在大的温度冲击和大的机动过载下,VC均温板不再适用,取而代之的是固态均温板。而目前国内的固态均温板主要为纯铝板、纯铜板、铝基金刚石、铜基金刚石、石墨铝板、铝基封装热解石墨均温板。纯铝板导热率偏低,纯铜板过重,铝基金刚石、铜基金刚石又难以机加,石墨铝板又容易掉碳粉危害器件,铝基封装热解石墨均温板不仅价格高昂而且厚度方向的导热率极差始终制约着国内固态均温板的发展。
因此,针对目前的研究现状,本发明提供一种封装块状高导材料的热管理组件及其制备方法,该组件属于固态均温板的一种,能够满足机载、弹载大的过载和较高的温度冲击的使用需求。该热管理组件不仅可以实现面内高导热率,而且对厚度方向进行深度改性,极大地提高了厚度方向的导热率。同时,可以兼顾非常小的界面热阻,可以实现热量的快速高效的均匀。
发明内容
发明目的:为了解决背景技术中所提出的技术要求,本发明提供了一种能够满足机载、弹载大的过载和较高的温度冲击的使用需求的兼具面内和垂向高导热,且具备极低的界面封装热阻的封装块状高导材料的热管理组件及其制备方法。
技术方案:
请参考附图1和附图3,该图示显示本申请实施例提供的一种封装块状高导材料的热管理组件机构的结构示意图。
本发明的技术方案为:
本发明提供的一种热管理组件,其结构包括封装基板8和带涂层的夹层块状高导材料2;
上述封装基板8由封装底盒6和上盖1两部分构成;底盒6向内伸出小型阵列圆柱5,可以使热量快速的向厚度方向传导。
本发明关于带涂层的夹层块状高导材料的加工制造步骤是:
1]选取特定尺寸的块状高导材料2,进行高导热方向的打磨,保证其表面粗糙度在1.6以内;也可以选用其他材料包括但不限于块状石墨烯、块状热解石墨、块状石墨块、块状人造金刚石;
2]用激光穿孔机对块状高导材料2进行预订位置大型阵列孔3和小型微孔4的打孔,孔径在0.1mm~0.2mm,密度1%~30%,优选密度5%~20%;
3]将上述热解的块状高导材料2放入煮沸的NaOH溶液中进行去油清洗10min;再将其放入去离子水的超声波清洗设备中,超声波清洗30min~40min;
4]在清洗后的块状高导材料2表面电镀上薄金属涂层,涂层包括但不限于银、银-铜、锡、铅、镍及其组合金属,厚度范围在0.001~0.015mm;
5]取出金属化后的块状高导材料2,放入去离子水的超声波清洗设备中,超声波清洗30min~50min,优选30min。
方法一:本发明关于铸造的热管理组件的加工步骤是:
请参考示意图2,图3和图4,该图示显示本申请实施例提供的一种铸造工艺制成的封装块状高导材料的热管理组件机构的结构示意图。
上述铸造工艺制成的热管理组件,其结构包括泡沫外壳9和块状高导材料10(2)两部分构成。
1]将上述块状高导材料10(2)在100℃的烘箱中干燥2h~2.5h备用;
2]将金属粉浆、发泡剂CaCO3、活性添加剂充分融合制成混合浆料;
3]通过上述的混合浆料实现干燥块状高导材料10(2)在前预制模具中的定位;
4]将前预制模具在管式炉中加热一定时间,加热过程炉体通入惰性气体防止金属氧化;
5]加热后冷却到室温,然后,取出包封块状高导材料10(2)的泡沫外壳9,放入特定溶液中进行清洗,之后对其进行烘干;
6]将上步产生的包封块状高导材料10(2)的泡沫外壳9放入石墨模具中,模具保持一定的锁合压力和特定的温度,压力浸渗炉中的块状金属在高温作用下熔融,并在压力作用下挤压进石墨模具,分散填充包封块状高导材料10(2)的泡沫外壳9,之后保压特定时间后进行冷却过程,直至冷却到室温;
7]最后将上述铸造的热管理组件从模具中取出,并按最终图纸进行CNC加工。
方法二:本发明关于焊接的热管理组件的加工步骤是:
请参考附图1,上述焊接工艺制成的热管理组件,其结构包括封装底盒6、上盖1、块状高导材料2三部分构成;
1]用金属材料对微孔4进行填充,向金属化后的块状高导材料微孔中填封纳米金属粉,之后放入管式炉,在特定温度下进行烧结;
2]在预先机加的铝合金封装基板8的焊道处铺上焊料;
3]将1]烧结完成的块状高导材料装配入铝合金封装基板8中;
3]在惰性气体的保护下,在高温炉中完成底盒6和上盖1的焊接;
3]焊接后,自然冷却至室温,再通过CNC进行精加工。
有益效果:
1)铸造方式结合的散热组件,厚度方向微孔被压力浸渗的铝液贯穿,厚度方向的导热率不低于65w/m*k,界面热阻R不大于0.03℃/w;
2)焊接方式结合的散热组件,厚度方向被烧结的铜粉进行改性,因此厚度方向的导热率有较大的提升,厚度方向的导热率不低于85w/m*k,界面热阻R不大于0.05℃/w;
3)铸造方式结合的散热组件,中心的高导热材料被通孔的泡沫金属进行前置定位,避免了中心高导热材料的位置错动,为精细设计和精密加工提供了保障。
本发明相比现有技术的优点:
1)本发明属于固态均温板,不受大过载、温度冲击影响,传热本质属于材料基本特性,不存在毛细作用,不存在材料的物理变化和化学变化,本发明的散热组件具有更强的环境适应性和具有更高的寿命;
2)本发明在材料的全生命周期,热性能衰减不超过5%,具有更高的可靠性和稳定性;
3)本发明解决了常规高导材料面导热率高,厚度方向导热率极低的问题,用微孔和大阵列孔不仅实现了材料芯体的力学性能提升,而且大幅提升厚度方向的导热率解决了大热流密度的承载问题;
4)本发明公开的将封装基板、带金属涂层的夹层块状高导材料通过焊接或压力浸渗的铸造工艺设计进行结合,相比于机械连接和胶结,具有更低的接触热阻。
附图说明:
图1是本发明所提供的热管理组件原理结构示意图;
图2是本发明所提供的铸造的热管理组件原理结构示意图;
图3是本发明所提供的铸造的热管理组件原理三维结构示意图;
图4是本发明所提供的铸造的热管理组件原理二维结构示意图;
附图明细如下:
1-上盖;2-带涂层的高导材料块;3-大型孔阵;4-小型微孔;5-小型阵列圆柱;
6-底盒;7-芯片;8-封装基板;
9-泡沫铝外壳;10-带涂层的高导材料块。
具体实施方式:
下面用具体实施例说明本发明,但不是对本发明的限制。
实施例1
1)选取特定尺寸的热解石墨块,用激光穿孔机进行预订位置大型阵列孔和小型微孔的打孔,孔隙率在15%;
2)将上述热解石墨块放入煮沸的NaOH溶液中进行去油清洗10min;
3)再将其放入去离子水的超声波清洗设备中,超声波清洗30min;
4)将清洗后的热解石墨块放入调配好的电镀液中,加上给定的电流,通过电镀实现热解石墨表面的金属化;
5)取出金属化后的热解石墨,放入去离子水的超声波清洗设备中,超声波清洗30min;
6)在100℃的烘箱中干燥热解石墨块2h备用;
7)将金属铝粉浆、碳酸钙、活性添加剂充分融合,制成混合浆料,金属和发泡剂的混合比例为( 8:2) ~( 9:1 ),也可以选用其他材料,金属包括但不限于金属铜、金属钛等,发泡剂包括但不限于氯化钠、正磷酸、氢氧化铝等;
8)通过上述的混合浆料实现干燥块状高导材料在前预制石墨模具中的定位;
9)将前预制石墨模具在管式炉中加热到630℃,保温半小时,加热过程炉体通入氮气防止铝粉氧化;
10)加热后冷却到室温,之后取出包裹高导材料的发泡金属放入H2C2O4(草酸)溶液中,浸泡20min;
11)再将其放入去离子水中进行超声波清洗30min;
12)取出该发泡金属包裹体在氮气保护下,在100℃的烘箱内干燥3h;
13)将上述发泡金属包裹体放入最终模具中,保持不小于5MPa的锁合压力,模具温度保持在550℃;
14)将牌号为6063的铝块放入压力浸渗炉中,炉内温度为680℃,压力为100MPa,在该条件下将铝块熔融并挤入石墨模具中,分散填充泡沫铝,实现对热解石墨的封装;
15)保压10min后,对模具进行冷却,冷却至室温后,取出热管理组件;
16)按最终图纸进行CNC加工。
实施例2
1)选取特定尺寸的热解石墨块,进行高导热方向的打磨,保证其表面粗糙度在1.6以内;
2)将打磨后的热解石墨块用激光穿孔机进行预订位置大型阵列孔和小型微孔的打孔;
3)将上述热解石墨块放入煮沸的NaOH溶液中进行去油清洗10min;
4)再将其放入去离子水的超声波清洗设备中,超声波清洗30min;
5)将清洗后的热解石墨块放入调配好的电镀液中,加上给定的电流,通过电镀实现热解石墨表面的金属涂层;
6)取出金属化后的热解石墨,放入去离子水的超声波清洗设备中,超声波清洗30min;
7)向金属化后的热解石墨中的微孔中填缝纳米铜粉,之后放入管式炉,在950℃下进行烧结;
8)在预先机加的铝合金封装基板的焊道处上焊料;
9)将烧结后的热解石墨装配入铝合金封装基板中;
10)在真空度为1×10-4Pa,温度为610℃的真空炉中完成基板的焊接;
11)焊接后,自然冷却至室温,再通过CNC进行精加工。
Claims (27)
1.一种用于实现热量快速均匀的高导热低界面热阻的热管理组件,该热管理组件包括:封装基板、带涂层的夹层块状高导材料。
2.该热管理组件的力学性能(强度、刚度)、环境适应性(耐酸碱、与其他材料的结合适配性)由封装基板提供,其热学特性(高导热率、低热膨胀系数)由夹层块状高导材料提供,其界面特性(低界面热阻)由高导材料块上的特殊涂层提供。
3.根据权利要求1所述的热管理组件,其中,所述封装基板可以为金属材料,可以为陶瓷材料。
4.根据权利要求2所述的封装金属基板包括但不限于铜、铝、钨、钼、镍、铁、银、金、铍及其组合。
5.根据权利要求2所述的封装陶瓷基板包括但不限于氧化铝、氧化铍、氮化硼、碳化硅、氮化硅及其组合。
6.根据权利要求1所述的热管理组件,其中,所述夹层块状高导材料包括但不限于块状石墨烯、块状热解石墨、块状石墨块、块状人造金刚石。
7.根据权利要求5所述的夹层块状高导材料,若夹层块状高导材料为块状石墨烯、块状热解石墨、块状石墨块,则需要在块状材料的高导热面上钻出的大型阵列孔和小型微孔。
8.根据权利要求6所述的各向异性的夹层块状高导材料,在热源对应位置分布着大型阵列孔,以便于热量快速的向厚度方向传导。
9.根据权利要求6所述的各向异性的夹层块状高导材料,在高导热面内分布着均布微孔,微孔的密度在1%~30%,优选5%~20%。
10.根据权利要求1所述的热管理组件,其中,高导材料块上的涂层可以为金属,可以为陶瓷;
根据权利要求9所述的高导材料块上的金属涂层包括但不限于银、银-铜、锡、铅、镍及其组合。
11.根据权利要求9所述的金属涂层,其成型方式包括但不限于粉体气相沉积填充、粉体冷喷涂填充、粉体热喷涂填充、电镀填充、化学镀填充。
12.根据权利要求9所述的高导材料块上的陶瓷涂层包括但不限于碳化硅、碳化硅。
13.根据权利要求9所述的陶瓷涂层,其成型方式包括但不限于粉体气相沉积填充、粉体冷喷涂填充、粉体热喷涂填充、盐浴法填充。
14.根据权利要求1所述的热管理组件,封装基板、带金属涂层的夹层块状高导材料可以通过机械连接、胶接、焊接与铸造等形式结合在一起。
15.根据权利要求14所述的机械连接的热管理组件,具体连接方式包括但不限于压接、铆接、螺接,机械连接的热管理组件是界面热阻最大的连接形式,一般不推荐使用。
16.根据权利要求14所述的粘接的热管理组件,界面热阻仅稍低于机械连接,受限于粘结剂的低导热率,以及粘结剂的耐高温性差,一般亦不推荐使用。
17.根据权利要求14所述的焊接的热管理组件,可以实现基板-焊料-芯材的牢固结合,且焊料材料为金属材料,具有较好的导热率,且焊接的热管理组件必须配合夹层块状高导材料的金属涂层使用,确保焊料与金属涂层、封装基板的材料浸润性良好。
18.根据权利要求14所述的铸造的热管理组件,是界面热阻最低的封装形式,配合夹层块状高导材料的金属涂层使用效果更佳,该铸造方式一般选用压力浸渗,确保封装基板材料流动均匀。
19.根据权利要求18所述的压力浸渗法铸造的热管理组件,该方法中块状高导材料的微孔不需要做前填充处理,微孔会在铸造过程中被熔融金属填充。
20.根据权利要求18所述的压力浸渗法铸造的热管理组件,该方法中块状高导材料在压力浸渗前,需要通过通孔泡沫金属提前包裹块状高导材料实现压力浸渗前的前定位处理。
21.根据权利要求20所述的通孔泡沫金属包括但不限于泡沫铝、泡沫铜、泡沫钛。
22.根据权利要求20所述的通孔泡沫金属的制备方法,包括但不限于熔体发泡法、粉浆成型法、渗流铸造法、散粉烧结法、粉浆烧结法、发泡剂发泡法。
23.根据权利要求22所述的粉浆成型法,发泡剂包括但不限于碳酸钙、氯化钠、正磷酸、氢氧化铝。
24.根据权利要求18所述的压力浸渗法铸造的热管理组件,先通过前模具形成包裹定位块状高导材料的金属粉状物胚体,在通过高温烧结作用生成金属泡沫,最后再将包裹块状高导材料的金属泡沫放置于最终模具中,在特定温度和压力的作用下,实现熔融金属的压力浸渗。
25.根据权利要求14所述的焊接的热管理组件,该方法中块状高导材料的微孔需要进行前填充处理,填充材料包括但不限于铜、银、银-铜、锡、铅、镍及其组合,填充方式包括但不限于粉体烧结填充、粉体由粘结剂填充、金属微针填充、粉体气相沉积填充、粉体冷喷涂填充、粉体热喷涂填充、电镀填充、化学镀填充。
26.根据权利要求5所述的夹层块状高导材料,若夹层块状高导材料为块状人造金刚石,则不需要对金刚石进行改性处理,但该种方式造价极高,经济性差。
27.根据权利要求14所述的焊接的热管理组件,待块状高导材料完成表面涂层和微孔填充后,将其与封装基板进行装配,在特定温度和压力下,实现封装基板对高导材料的封装。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210365239.3A CN116936503A (zh) | 2022-04-08 | 2022-04-08 | 一种封装块状高导材料的热管理组件及其制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210365239.3A CN116936503A (zh) | 2022-04-08 | 2022-04-08 | 一种封装块状高导材料的热管理组件及其制作方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN116936503A true CN116936503A (zh) | 2023-10-24 |
Family
ID=88377909
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202210365239.3A Pending CN116936503A (zh) | 2022-04-08 | 2022-04-08 | 一种封装块状高导材料的热管理组件及其制作方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN116936503A (zh) |
-
2022
- 2022-04-08 CN CN202210365239.3A patent/CN116936503A/zh active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6162497A (en) | Manufacturing particles and articles having engineered properties | |
CN102214620B (zh) | 具有铜/金刚石复合材料的半导体衬底及其制造方法 | |
US4882212A (en) | Electronic packaging of components incorporating a ceramic-glass-metal composite | |
CN101764121B (zh) | 层间绝缘叠层复合材料及其制备方法 | |
EP0840654A1 (en) | Manufacturing particles and articles having engineered properties | |
US20060246314A1 (en) | Method of producing a heat dissipation substrate of molybdenum powder impregnated with copper with rolling in primary and secondary directions | |
US5024883A (en) | Electronic packaging of components incorporating a ceramic-glass-metal composite | |
JP6041117B1 (ja) | 放熱基板、半導体パッケージ、及び半導体モジュール、並びに放熱基板の製造方法 | |
JPH06506321A (ja) | 高熱伝導率の表装装置 | |
US20210175146A1 (en) | Heat Sink for an Electronic Component | |
KR20080032324A (ko) | 발포금속을 이용한 히트싱크 및 이의 제조방법 | |
JP2007500450A (ja) | 複合材料及び電気回路又は電気モジュール | |
CN113758325B (zh) | 一种内置铜/金刚石烧结吸液芯的vc散热器及其制备方法 | |
US20020191377A1 (en) | Material of heat-dissipating plate on which semiconductor is mounted, method for fabricating the same, and ceramic package produced by using the same | |
CN108165808B (zh) | 一种石墨-铝双相连通复合材料及其制备方法 | |
CN116936503A (zh) | 一种封装块状高导材料的热管理组件及其制作方法 | |
CN113235020A (zh) | 一种梯度金刚石/铜复合材料及其制备方法 | |
CN217936346U (zh) | 金刚石/铜/金属涂层复合结构 | |
EP1231633B1 (en) | Material of heat-dissipating plate on which semiconductor is mounted, method for fabricating the same, and ceramic package produced by using the same | |
CN109618505B (zh) | 一种直接敷铜陶瓷基板的高厚径比通孔互连的方法 | |
KR100292681B1 (ko) | 반도체용열방산체및그의제조방법 | |
CN107516653A (zh) | 小尺寸方形扁平无引脚型封装层间互连结构及制造方法 | |
KR101468920B1 (ko) | 세라믹판과 금속기지 복합재료 방열판이 접합된 가압합침 일체형 다층방열기판 및 그 제조방법 | |
CN113758327B (zh) | 一种含铜/金刚石烧结吸液芯的复合vc散热器及其制备方法 | |
CN112342424B (zh) | 一种内网式金属陶瓷基板材料的制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |