CN116936399A - Method for improving first wafer effect in high-temperature etching process - Google Patents
Method for improving first wafer effect in high-temperature etching process Download PDFInfo
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- CN116936399A CN116936399A CN202210319328.4A CN202210319328A CN116936399A CN 116936399 A CN116936399 A CN 116936399A CN 202210319328 A CN202210319328 A CN 202210319328A CN 116936399 A CN116936399 A CN 116936399A
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- temperature
- wafer
- process chamber
- etching
- wafer carrier
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- 238000000034 method Methods 0.000 title claims abstract description 193
- 238000005530 etching Methods 0.000 title claims abstract description 83
- 230000000694 effects Effects 0.000 title claims abstract description 19
- 230000007613 environmental effect Effects 0.000 claims description 10
- 238000005286 illumination Methods 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 abstract description 102
- 239000007788 liquid Substances 0.000 abstract description 9
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 238000007664 blowing Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Weting (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The method for improving the first wafer effect in the high-temperature etching process provided by the invention has the advantages that before the high-temperature etching process is carried out on the wafer, the process cavity and the wafer carrying platform are preheated, so that the environment in the process cavity and the wafer carrying platform are quickly heated to the preset process temperature, then the wafer is sent into the process cavity to carry out the etching process, the temperature of the process cavity and the wafer carrying platform is stabilized at the preset process temperature, the influence on the etching rate of etching liquid is basically equal, the etching thickness of the same batch of wafers is basically the same, and the first wafer effect and the process error generated in the heating stage of the traditional high-temperature etching process are eliminated.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a method for improving a first wafer effect in a high-temperature etching process.
Background
Along with the reduction of the size of the semiconductor process, the requirements of the wet etching process are continuously improved, and in order to ensure the effectiveness of film etching, high-temperature etching liquid such as high-temperature ADM (diluted ammonia), high-temperature SC1, high-temperature HF and the like are widely applied to the wet etching process so as to improve the etching rate, shorten the process time and improve the effectiveness of the process.
When the wet etching equipment continuously works on a batch of wafers, the wafers are fed into the cavity one by one to execute the etching process, and the ambient temperature of the cavity is increased and then stabilized along with the continuous progress of the high-temperature etching process. Because the environmental temperature of the cavity of the wet etching equipment changes along with the process, and the etching rate of the etching liquid has temperature sensitivity, the high-temperature etching process has a first-wafer effect. The first wafer effect means that in a batch of wafers to be etched at a high temperature, the etching thickness of the first wafer is greatly different from the preset etching thickness, usually the etching thickness of the first wafer is smaller, and then the etching thickness of the plurality of wafers is gradually increased until the preset etching thickness is reached. On the one hand, the first wafer effect can cause the uniformity reduction between wafers processed in the same batch, and on the other hand, the process error of the etching thickness of the wafer can cause the subsequent process failure, thereby reducing the product yield.
Therefore, there is a need for a method of high temperature etching process that improves the first wafer effect in the high temperature etching process, and improves product yield and stability and uniformity from wafer to wafer.
Disclosure of Invention
The invention aims to provide a method for improving the first wafer effect in a high-temperature etching process, which is used for solving the first wafer effect in the high-temperature etching process, so that the product yield is improved on one hand, and the etching stability and uniformity among wafers in the process are improved on the other hand.
In order to achieve the above object, the present invention provides a method for improving a first wafer effect in a high temperature etching process, comprising the following steps:
step s1, providing etching equipment, wherein the etching equipment is provided with a process cavity and a wafer carrying platform;
step s2, detecting the temperature of the wafer carrier and the environmental temperature in the process chamber, if the temperature of the wafer carrier and the environmental temperature in the process chamber reach the preset process temperature, executing step s4, and if the temperature of the wafer carrier and the environmental temperature in the process chamber do not reach the preset process temperature, executing step s3;
step s3, preheating the wafer carrier and the process chamber until the temperature of the wafer carrier and the ambient temperature in the process chamber reach the preset process temperature;
and step s4, the wafer is sent into a process chamber and is kept on a wafer carrier, and an etching process is performed on the wafer.
According to the invention, the process chamber and the wafer carrying platform are preheated before the etching equipment executes high-temperature operation, namely before the wafer is sent into the process chamber, so that the ambient temperature in the process chamber and the temperature of the wafer carrying platform are stabilized at the preset process temperature, the initial temperature of the process chamber and the wafer carrying platform is prevented from being too low, the first wafer effect is generated in the high-temperature etching process, and the stability and uniformity between the wafer and the wafer in the process are improved.
Drawings
FIG. 1 is a flow chart of a method for improving the first wafer effect in a high temperature etching process according to an embodiment of the present invention;
FIG. 2 is a graph showing temperature variation in a process chamber in a conventional high temperature etching process;
FIG. 3 is a graph showing temperature variation in a process chamber during a high temperature etching process according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of an etching apparatus according to a first embodiment of the present invention;
FIG. 5 is a schematic diagram of an etching apparatus according to a second embodiment of the present invention;
FIG. 6 is a schematic diagram of an etching apparatus according to a third embodiment of the present invention;
fig. 7 is a schematic structural diagram of an etching apparatus according to a fourth embodiment of the present invention.
Detailed Description
In order to describe the technical content, constructional features, achieved objects and effects of the present invention in detail, the following description will be made with reference to the embodiments in conjunction with the accompanying drawings.
Fig. 1 shows a flow chart of a method of improving the first-wafer effect in a high temperature etching process. As shown in fig. 1, the method comprises the steps of:
step s1, providing etching equipment, wherein the etching equipment is provided with a process cavity and a wafer carrying platform;
step s2, detecting the temperature of the wafer carrier and the environmental temperature in the process chamber, if the temperature of the wafer carrier and the environmental temperature in the process chamber reach the preset process temperature, executing step s4, and if the temperature of the wafer carrier and the environmental temperature in the process chamber do not reach the preset process temperature, executing step s3;
step s3, preheating the wafer carrier and the process chamber until the temperature of the wafer carrier and the ambient temperature in the process chamber reach the preset process temperature;
and step s4, the wafer is sent into a process chamber and is kept on a wafer carrier, and an etching process is performed on the wafer. In the method, the preset process temperature can be adjusted according to the temperature of the adopted etching liquid, the temperature of the etching liquid adopted in the etching process is 50-80 ℃ generally, and the preset process temperature can also be set at 50-80 ℃. In this embodiment, the absolute value of the difference between the preset process temperature and the temperature of the etching liquid when the wafer performs the etching process is smaller than the specified threshold. For example, when etching a wafer with an HF solution at 65 ℃, in one embodiment, the specified threshold is set to 0 ℃, then the preset process temperature is set to 65 ℃; in another embodiment, the specified threshold is set to 2 ℃, and the preset process temperature is set to 63 ℃ to 67 ℃.
Fig. 2 shows temperature variation in a process chamber in a conventional high temperature etching process. Fig. 3 shows the temperature variation in the process chamber in the high temperature etching process of the present invention. The temperature within the process chamber as referred to herein includes the ambient temperature within the process chamber as well as the temperature of the wafer carrier. In the conventional high temperature etching process, as shown in fig. 2, the high temperature etching process is performed from the temperature in the process chamber at the normal temperature stage, and as the high temperature etching process is continuously performed, the high temperature etching liquid continuously heats the environment in the process chamber and the wafer carrier, and the temperature in the process chamber sequentially goes through the temperature raising stage and the temperature stabilizing stage. In the temperature rising stage, the ambient temperature of the process chamber is lower than the preset process temperature, and at the moment, the temperature loss of the high-temperature etching liquid is larger, and the etching rate is lower, so that the etching thickness of the wafer in the temperature rising stage is lower than the preset etching thickness, namely, the first few wafers (such as the first 3 wafers in fig. 2) have larger process errors. In the high-temperature etching process of the invention, as shown in fig. 3, before the high-temperature etching process is performed on the wafer, the process chamber is preheated, so that the temperature in the process chamber is quickly raised to a preset process temperature, then the wafer is sent into the process chamber to perform the etching process, the temperature in the process chamber is stabilized at the preset process temperature, the etching rate of etching liquid is basically equal, the etching environment of the wafer to be processed is basically the same, the etching thickness of each wafer is close to the preset etching thickness, and the first wafer effect and the process error generated in the heating stage of the traditional high-temperature etching process are eliminated.
In step s3, the process chamber and wafer carrier may be preheated in different ways. Different implementations of preheating the process chamber and wafer carrier and corresponding etching apparatus will be described in the following with specific embodiments.
Example 1
As shown in fig. 4, the etching apparatus has a process chamber 101 and a wafer stage 102. An air blowing device 103 is disposed on the top of the process chamber 101, the air blowing device 103 is provided with a first heater 1031, and the air blowing device 103 supplies hot air into the process chamber 101 through the first heater 1031 to preheat the wafer stage 102 and the process chamber 101. The first heater 1031 may be disposed at an air inlet or an air outlet of the air supply device 103. Preferably, the air outlet of the air supply device 103 is located above the wafer carrier 102, so that when the air supply device 103 supplies hot air into the process chamber 101, the hot air can quickly reach the wafer carrier 102, so as to preheat the wafer carrier 102.
The bottom of the process chamber 101 is provided with an exhaust device 104, and the process chamber 101 keeps the internal environment of the process chamber 101 clean through the air supply device 103 and the exhaust device 104.
The etching apparatus further has a first temperature detector 1011 for detecting an ambient temperature within the process chamber 101 and a second temperature detector 1021 for detecting a temperature of the wafer stage 102. In one embodiment, the first temperature detector 1011 is disposed within the process chamber 101, such as on an inner wall of the process chamber 101, such as near the wafer carrier 102; the second temperature detector 1021 is disposed in the wafer stage 102.
The controller of the etching apparatus receives the ambient temperature detected by the first temperature detector 1011 and the temperature of the wafer stage 102 detected by the second temperature detector 1021 before each wafer is fed into the process chamber 101, and determines whether to preheat the process chamber 101 and the wafer stage 102 according to the comparison between the detected temperatures and the set process temperature.
When the temperature of the wafer carrier 102 and the ambient temperature in the process chamber 101 do not reach the preset process temperature, preheating is performed on the wafer carrier 102 and the process chamber 101 until the temperature of the wafer carrier 102 and the ambient temperature in the process chamber 101 reach the preset process temperature, and then, the wafer is sent into the process chamber 101 and kept on the wafer carrier 102, and an etching process is performed on the wafer.
Example two
Referring to fig. 5, the difference between the second embodiment and the first embodiment is that a plurality of nozzles 105 are disposed on the sidewall of the process chamber 101, the plurality of nozzles 105 are sequentially connected to the second heater 1051 and the first air source 1052 through pipelines, the air supply device 103 is not configured with the first heater 1031, and other structures are the same as the first embodiment.
The plurality of showerhead 105 may be symmetrically disposed on two opposing sidewalls of the process chamber 101, and the flow of hot gas provided by the plurality of showerhead 105 may directly purge and heat the wafer carrier 102 while preheating the process chamber 101.
When the process chamber 101 and the wafer stage 102 need to be preheated, a hot gas flow is provided into the process chamber 101 by the showerhead 105 to preheat the process chamber 101 and the wafer stage 102. The hot gas flow can be heat N 2 . Preferably, in the preheating process of the process chamber 101 and the wafer carrier 102, the top air supply device 103 is closed, and meanwhile, the exhaust pressure is increased, so that the replacement speed of cold air in the process chamber 101 can be increased, the heating time of the process chamber 101 and the wafer carrier 102 is shortened, and the production efficiency of equipment is improved.
Example III
Referring to fig. 6, the difference between the third embodiment and the first embodiment is that a gas channel 106 is formed in the wafer carrier 102, the gas channel 106 is sequentially connected to a third heater 1061 and a second gas source 1062 through a pipeline, and the blower 103 is not configured with the first heater 1031, and other structures are the same as those of the first embodiment.
When the process chamber 101 and the wafer stage 102 need to be preheated, a hot gas flow is provided into the process chamber 101 through a gas channel 106 on the wafer stage 102 to preheat the process chamber 101 and the wafer stage 102. Similarly, in the preheating process of the process chamber 101 and the wafer carrier 102, the top air supply device 103 is closed, and meanwhile, the exhaust pressure is increased, so that the replacement speed of cold air in the process chamber 101 can be increased, the heating time of the process chamber 101 and the wafer carrier 102 is shortened, and the production efficiency of equipment is improved.
In this embodiment, the wafer stage 102 may be a bernoulli stage, and the gas channel 106 may be a bernoulli hole formed on the bernoulli stage. When it is desired to preheat the process chamber 101 and the wafer carrier 102, a flow of hot gas is provided into the process chamber 101 through the Bernoulli orifice in the wafer carrier 102 to preheat the process chamber 101 and the wafer carrier 102.
Example IV
Referring to fig. 7, the fourth embodiment is different from the first embodiment in that a light source 107, such as an LED lamp or an infrared lamp, is disposed around the wafer stage 102, and the blower 103 is not provided with the first heater 1031, and other structures are the same as those of the first embodiment.
When the process chamber 101 and the wafer stage 102 need to be preheated, the process chamber 101 and the wafer stage 102 are preheated by the illumination radiation of the light source 107.
In view of the foregoing, the present invention has been described in detail with reference to the above embodiments and the related drawings, and the related art will be fully disclosed, so that those skilled in the art can implement the present invention. The above-described embodiments are only intended to illustrate the present invention, not to limit the scope of the claims of the present invention. It is intended that all changes in the number of elements described herein, or the substitution of equivalent elements, etc., be within the scope of the invention.
Claims (8)
1. The method for improving the first wafer effect in the high-temperature etching process is characterized by comprising the following steps of:
step s1, providing etching equipment, wherein the etching equipment is provided with a process cavity and a wafer carrying platform;
step s2, detecting the temperature of the wafer carrier and the environmental temperature in the process chamber, if the temperature of the wafer carrier and the environmental temperature in the process chamber reach the preset process temperature, executing step s4, and if the temperature of the wafer carrier and the environmental temperature in the process chamber do not reach the preset process temperature, executing step s3;
step s3, preheating the wafer carrier and the process chamber until the temperature of the wafer carrier and the ambient temperature in the process chamber reach the preset process temperature;
and step s4, the wafer is sent into a process chamber and is kept on a wafer carrier, and an etching process is performed on the wafer.
2. The method of claim 1, wherein an absolute value of a difference between the preset process temperature and a temperature of the etching solution when the wafer is subjected to the etching process is less than a specified threshold.
3. The method of claim 1, wherein the predetermined process temperature is 50 ℃ to 80 ℃.
4. The method of improving the first wafer effect in a high temperature etching process according to claim 1, wherein step s3 is performed by preheating the wafer carrier and the process chamber by introducing a hot gas flow into the process chamber.
5. The method of claim 4, wherein the top of the process chamber is configured with an air supply device, the air supply device is configured with a heater, and the method comprises the step of supplying hot air into the process chamber through the heater by the air supply device to preheat the wafer carrier and the process chamber.
6. The method of claim 4, wherein a plurality of nozzles are disposed on a sidewall of the process chamber, and wherein the method provides hot gas flow to the process chamber through the plurality of nozzles to preheat the wafer carrier and the process chamber.
7. The method of claim 4, wherein the wafer carrier is provided with an air flow channel, and wherein the method provides a hot air flow to the process chamber through the air flow channel to preheat the wafer carrier and the process chamber.
8. The method according to claim 1, wherein a light source is disposed around the wafer stage, and the step S3 is to preheat the wafer stage and the process chamber by the illumination radiation of the light source.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210319328.4A CN116936399A (en) | 2022-03-29 | 2022-03-29 | Method for improving first wafer effect in high-temperature etching process |
| PCT/CN2023/082703 WO2023185544A1 (en) | 2022-03-29 | 2023-03-21 | Method for mitigating first wafer effect in high-temperature etching process |
| TW112112090A TW202338970A (en) | 2022-03-29 | 2023-03-29 | Method for mitigating first wafer effect in high-temperature etching process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210319328.4A CN116936399A (en) | 2022-03-29 | 2022-03-29 | Method for improving first wafer effect in high-temperature etching process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116936399A true CN116936399A (en) | 2023-10-24 |
Family
ID=88199202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210319328.4A Pending CN116936399A (en) | 2022-03-29 | 2022-03-29 | Method for improving first wafer effect in high-temperature etching process |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN116936399A (en) |
| TW (1) | TW202338970A (en) |
| WO (1) | WO2023185544A1 (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW450422U (en) * | 1998-11-20 | 2001-08-11 | Taiwan Semiconductor Mfg | Apparatus for preventing the decrease of etching rate |
| US7445726B2 (en) * | 2005-09-05 | 2008-11-04 | United Microelectronics Corp. | Photoresist trimming process |
| US8911559B2 (en) * | 2008-09-22 | 2014-12-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method to pre-heat and stabilize etching chamber condition and improve mean time between cleaning |
| CN109449101A (en) * | 2018-10-24 | 2019-03-08 | 上海华力微电子有限公司 | A kind of wet etching and cleaning chamber and method |
| CN112309888A (en) * | 2019-07-29 | 2021-02-02 | 芯恩（青岛）集成电路有限公司 | Wet etching method |
-
2022
- 2022-03-29 CN CN202210319328.4A patent/CN116936399A/en active Pending
-
2023
- 2023-03-21 WO PCT/CN2023/082703 patent/WO2023185544A1/en unknown
- 2023-03-29 TW TW112112090A patent/TW202338970A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023185544A1 (en) | 2023-10-05 |
| TW202338970A (en) | 2023-10-01 |
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