CN116936345A - 一种硅表面平坦化和湿式清洗工艺 - Google Patents
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Abstract
本发明公开了一种硅表面平坦化和湿式清洗工艺，本发明工艺可以更好地维持硅片表面粗糙度。另外，高温溶液以及碱性溶液对于粗糙度的影响最大，这两种溶液中OH‑的浓度非常高，而氢氧根离子会刻蚀Si表面，引起表面粗糙度的恶化。因而本发明不使用这些高温溶液，在保护硅片表面粗糙度方面具有优良的表现。在本发明中清洗工艺也会引起硅片粗糙度的变化，但是由于表面活性剂易于附着于硅表面，使得H2O2和HF对硅片表面的氧化与刻蚀速度更加均匀，因此表面粗糙度也可以很好的保持。
Description
技术领域
本发明涉及一种硅表面平坦化和湿式清洗工艺。
背景技术
微电子技术发展的目标是不断提高集成系统的性能及性能价格比，因此要求提高芯片的集成度，这是不断缩小半导体器件特征尺寸的动力源泉。以MOS技术为例，沟道长度缩小可以提高集成电路的速度;同时缩小沟道长度和宽度还可减小器件尺寸，提高集成度，从而在芯片上集成更多数目的晶体管，将结构更加复杂、性能更加完善的电子系统集成在一个芯片上;此外，随着集成度的提高，系统的速度和可靠性也大大提高，价格大幅度下降。由于片内信号的延迟总小于芯片间的信号延迟，这样在器件尺寸缩小后，即使器件本身的性能没有提高，整个集成系统的性能也可以得到很大的提高。
随着MOS器件的特征尺寸的减小，衬底的表面状态对于器件特性的影响越来越显著。因此，研究者开始对表面粗糙度进行研究。表面粗糙度的增加会影响到载流子的迁移率，使得迁移率减小，从而增加延迟，减小特征频率;表面粗糙度的增加还会增加载流子在表面的复合速度，使得非平衡载流子寿命变短，器件性能变差;粗糙度的增加还会产生大的闪烁噪声，并使得电路中MOSFET的电流驱动能力恶化。另外，扫描电镜以及原子力显微镜(AFM)的应用，使得对于表面粗糙度的观测也越来越精确。在制造工艺中，人们也开始越来越多地关注半导体清洗对于表面粗糙度的影响;另一方面，在器件制造前，对于化学机械抛光(CMP)后的硅片，进行粗糙度减小化处理的研究也成为了热点。
目前，工业上普遍使用的清洗法RCA清洗法，但是该方法消耗大量的超纯水(UPW)和化学液体，清洗步骤繁多使得清洗效率无法提高，需要消耗大量的纯净空气，用来抑制反应生成的化学气体扩散到超净间里，化学物质和超纯水(UPW)在清洗过程中都要加热到很高的温度，因此需要消耗大量的热能
发明内容
本发明的目的在于提供一种硅表面平坦化和湿式清洗工艺，以解决上述背景技术中提出的问题。
为实现上述目的，本发明提供如下技术方案：
一种硅表面平坦化和湿式清洗工艺，其特征是：步骤如下，
S1，将硅片放置在氧化炉中，温度1100℃，对硅片进行氧化，用H20和O2的混合气体以1000: 500 (scccm)的比例氧化Si片，氧化后用用浓度为36%的HC1溶液和50%的HF溶液以重量比19: 1的比例配成刻蚀液刻蚀掉氧化膜，氧化和刻蚀进行3次；
S2，将经过步骤S1后的硅片在氧气浓度低于20ppb的氮气环境中完全遮光的条件下在浓度为0. 5%的氢氟酸溶液(DHF)中，浸泡6h；
S3，使用含有臭氧的去离子水溶液去除有机物，金属杂质，并在表面形成化学氧化层；
S4，配成HF浓度为0.5%, H20z浓度为1%的水溶液，在其中添加表面活性剂，并施加兆声去除杂质颗粒，化学氧化膜，及包含在氧化层中的重金属杂质；
S5，使用臭氧水溶液并施加兆声波，去除硅片表面的有机物活性剂及HF等杂质，并形成化学氧化层；
S6，用氟酸浓度为0.5% 溶液，去除化学氧化层；
S7，用H2水溶液去除HF杂质。
优选的，步骤S3-S7是在无氧和无光的条件下进行。
与现有技术相比，本发明的有益效果是：
本发明工艺可以更好地维持硅片表面粗糙度。另外，高温溶液以及碱性溶液对于粗糙度的影响最大，这两种溶液中OH-的浓度非常高，而氢氧根离子会刻蚀Si表面，引起表面粗糙度的恶化。因而本发明不使用这些高温溶液，在保护硅片表面粗糙度方面具有优良的表现。在本发明中清洗工艺也会引起硅片粗糙度的变化，但是由于表面活性剂易于附着于硅表面，使得H2O2和HF对硅片表面的氧化与刻蚀速度更加均匀，因此表面粗糙度也可以很好的保持。
实施方式
下面将结合本发明实施例，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
本发明提供一种技术方案：
一种硅表面平坦化和湿式清洗工艺，步骤如下，
S1，将硅片放置在氧化炉中，温度1100℃，对硅片进行氧化，用H20和O2的混合气体以1000: 500 (scccm)的比例氧化Si片，氧化后用用浓度为36%的HC1溶液和50%的HF溶液以重量比19: 1的比例配成刻蚀液刻蚀掉氧化膜，氧化和刻蚀进行3次；
S2，将经过步骤S1后的硅片在氧气浓度低于20ppb的氮气环境中完全遮光的条件下在浓度为0. 5%的氢氟酸溶液(DHF)中，浸泡6h；
S3，使用含有臭氧的去离子水溶液去除有机物，金属杂质，并在表面形成化学氧化层；
S4，配成HF浓度为0.5%, H202浓度为1%的水溶液，在其中添加表面活性剂，并施加兆声去除杂质颗粒，化学氧化膜，及包含在氧化层中的重金属杂质；
S5，使用臭氧水溶液并施加兆声波，去除硅片表面的有机物活性剂及HF等杂质，并形成化学氧化层；
S6，用氟酸浓度为0.5% 溶液，去除化学氧化层；
S7，用H2水溶液去除HF杂质。
步骤S3-S7是在无氧和无光的条件下进行，由于白光中包含有各种波长光线，为了更加精确地找出各个波长光线对表面粗糙度的不同影响，我们分别用波长较短的蓝光，波长较长的红光分别作为光源照射清洗。其中蓝光的波长:500nm，红光的波长:700nm。通过实验，我们可以发现，在无光照情况下，粗糙度变化最小。而当有光照时一，对于相同光照度的不同波长光线来说，波长较短的蓝光对于表面粗糙度影响比光线较长的红光要大。这主要是因为不同波长光线的能量不同。另外，为了找出清洗中光照度与表面粗糙度的关系，申请人比较了无光照情况和用不同强度的光线分别照射下的清洗。为了考察光线的影响，而避免其他因素如02影响的干扰，所有实验都在对外界遮光且氧气含量低于20ppb的氮气环境下进行。又考虑到其他化学物质与硅反应会影响粗糙度，因此实验中使用02含量很低且氧化能力很弱的H2（H2- UPW）水溶液。H2水溶液（H2- UPW）溶液中的H2容易挥发，为了维持H2的浓度，实验中在容器中采用以相同流速持续注入的方式，不断注入H2水溶液清洗。
本发明的清洗法最明显的特点是，清洗步骤少，使得清洗效率大大提高，另外，所有的清洗都在室温下进行，避免了因加热而造成的化学气体在超净间里的扩散污染。在清洗原理方面，本发明使用了表面活性剂及物理方式(兆声波)来去除杂质颗粒。这种方式不仅提高了清洗效率，更使得室温清洗成为可能。
比较RCA清洗方式及五步清洗方式，我们可以发现，除了使用去离子水溶液外，两种清洗方法中，易有代表性的清洗液体为:RCA清洗中，DHF ( HF:.0. 5% ); APM ( NH40H:H2O2: H202=0.05:1:5，80-90℃), Hot Water(80-90℃），HPM (HCL:H202: H20=1:1:6, 80-90℃);本发明清洗中，FPMS :(HF; 0.5%, H20:1%, Surfactant:50ppm)。
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型，本发明的范围由所附权利要求及其等同物限定。
Claims (2)
1.一种硅表面平坦化和湿式清洗工艺，其特征是：步骤如下，
S1，将硅片放置在氧化炉中，温度1100℃，对硅片进行氧化，用H20和O2的混合气体以1000: 500 (scccm)的比例氧化Si片，氧化后用用浓度为36%的HC1溶液和50%的HF溶液以重量比19: 1的比例配成刻蚀液刻蚀掉氧化膜，氧化和刻蚀进行3次；
S2，将经过步骤S1后的硅片在氧气浓度低于20ppb的氮气环境中完全遮光的条件下在浓度为0. 5%的氢氟酸溶液(DHF)中，浸泡6h；
S3，使用含有臭氧的去离子水溶液去除有机物，金属杂质，并在表面形成化学氧化层；
S4，配成HF浓度为0.5%, H202浓度为1%的水溶液，在其中添加表面活性剂，并施加兆声去除杂质颗粒，化学氧化膜，及包含在氧化层中的重金属杂质；
S5，使用臭氧水溶液并施加兆声波，去除硅片表面的有机物活性剂及HF等杂质，并形成化学氧化层；
S6，用氟酸浓度为0.5% 溶液，去除化学氧化层；
S7，用H2水溶液去除HF杂质。
2.根据权利要求1所述的一种硅表面平坦化和湿式清洗工艺，其特征是：所述步骤S3-S7是在无氧和无光的条件下进行。
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